TW200842277A - Lighting device, display device and method of operating the same - Google Patents

Lighting device, display device and method of operating the same Download PDF

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Publication number
TW200842277A
TW200842277A TW097107262A TW97107262A TW200842277A TW 200842277 A TW200842277 A TW 200842277A TW 097107262 A TW097107262 A TW 097107262A TW 97107262 A TW97107262 A TW 97107262A TW 200842277 A TW200842277 A TW 200842277A
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Taiwan
Prior art keywords
light
semiconductor
illumination device
sensor
space
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TW097107262A
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Chinese (zh)
Inventor
Hubert Ott
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Osram Opto Semiconductors Gmbh
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Publication of TW200842277A publication Critical patent/TW200842277A/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/0204Compact construction
    • G01J1/0209Monolithic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/10Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/20Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle
    • G01J1/28Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source
    • G01J1/30Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source using electric radiation detectors
    • G01J1/32Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source using electric radiation detectors adapted for automatic variation of the measured or reference value
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00Illuminated signs; Luminous advertising
    • G09F13/04Signs, boards or panels, illuminated from behind the insignia
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20Controlling the colour of the light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40Details of LED load circuits
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21WINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/40Lighting for industrial, commercial, recreational or military use
    • F21W2131/405Lighting for industrial, commercial, recreational or military use for shop-windows or displays
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00Combination of light sources
    • F21Y2113/10Combination of light sources of different colours
    • F21Y2113/13Combination of light sources of different colours comprising an assembly of point-like light sources
    • F21Y2113/17Combination of light sources of different colours comprising an assembly of point-like light sources forming a single encapsulated light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0488Optical or mechanical part supplementary adjustable parts with spectral filtering
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4247Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)

Abstract

A lighting device includes in a housing (15) one or more semiconductor elements (12, 13, 14) suitable for sending light out, and a light sensor (11). The light sensor is suitable to generate an output signal that is dependent on light reception.

Description

200842277 九、發明說明: 【發明所屬之技術領域】 本發明涉及一種照明裝置,其中一適合用來發光的半導 體本體配置在一種由外殼所圍繞的空間中。本發明另外亦 涉及一種顯示裝置,其適合用來顯示由上述照明裝置所照 明的資訊。此外,本發明另亦涉及一種用來操作該照明裝 置的方法和一種用來操作該顯示裝置的方法。 本專利申請案主張德國專利申請案10 2007 0 1 0 554.3和 ® 10 2007 012 381.9之優先權,其已揭示的整個內容在此一倂 作爲參考。 【先前技術】 傳統式照明裝置包括一種具有一空出區的外殼,此空出 、 區界定了一種空間,此空間中配置著一適合用來發光的半 導體本體。此種照明裝置亦稱爲發光裝置(LED)。澆注物質 覆蓋著且保護該發光的半導體晶片。外殼適合用來安裝在 一電路板上。 藉由半導體晶片所達成的發光現象會受到一種波動,其 是由半導體晶片中和該配置內部的老化過程所造成且另外 亦與溫度有關。因此,須使用適當的配置,以便藉由LED 來達成一種預設的亮度,其具有抗老性及/或耐溫性。此種 配置可包括一種光感測器,其藉由相對應的控制措施而作 用在,LED上且可補償一種與一預設値之間可能存在的偏 差。 上述配置例如已描述在美國專利申請案US 2006/0066265 A1 200842277 中。此一習知的配置使用一種分離式光感測器,其在LED 外部是配置在一種電路板上。此種配置不大能被積體化且 LED和光感測器之間的光學親合是依據分離式構造來進 行。因此,就應用在具有背光照明的現代化顯示裝置中而 言’習知的配置只能有條件地適用。 【發明內容】 本發明的目的因此是提供一種照明裝置,其中可使LED 和感測器之間的光學耦合獲得改良。 此外’將該照明裝置有利地應用於背光照明的顯示裝置 中。同樣,本發明亦涉及相對應的操作方法。 依據本發明的一實施形式,一照明裝置是依據申請專利 範圍第1項的特徵來設定。 具有上述照明裝置的顯不裝置是申請專利範圍第1 0項的 標的。照明裝置或顯示裝置的操作方法是申請專利範圍第 1 2和1 3項的標的。照明裝置和顯示裝置的其它形式描述在 申請專利範圍各附屬項中。申請專利範圍各項所公開的內 容詳細地藉由參考而收納在說明書中。 本發明提出一種照明裝置,其包括一種外殼,其圍繞著 一種空間。此照明裝置具有一在操作時適合用來發光的半 導體本體,其配置在該空間的內部中。此外,此照明裝置 具有一種光敏感的感測器,其配置在該空間的內部中且適 合用來產生一種與光的接收有關的輸出信號。 依據本發明的一種形式,該適合發光的半導體本體以及 感測器裝置(特別是上述的感測器)整合在唯一的外殼中。因 200842277 此,在發光的半導體本體和光感測器裝置之間可達成一種 足夠的光學耦合作用。該發光的半導體本體和光感測器裝 置可分別以半導體晶片來構成。例如,光感測器可以矽-光 二極體感測器來形成。由LED晶片所發出的光之足夠多的 部份可反射至該外殼的壁面上,各壁面同時亦用作反射 器,使光感測器-晶片可直接來接收所發出的光及/或所反射 的光。在一些實施形式中設有一種澆注物質,其覆蓋著LED 晶片及/或光感測器·晶片且用來使配置在該反射器外殼中 的多個組件之間達成良好的光學耦合。此澆注物質在其它 實施形式中亦可省略。 感測器特別是可爲一種光感測器·晶片的形式,在一種形 式中此光感測器可與相對應的信號導線相連接,使由此光 感測器所產生的電信號(其表示一種已偵測到的光事件)可 向外(即,外殼的外部)發出。例如,相對應的金屬式信號導 線可藉由該外殼壁來引導,以便在該外殼內部空間中可在 信號導線的終端區段上與光感測器-晶片相接觸。此種接觸 例如可藉由直接-接觸來達成或經由一種連結線或其它的連 結技術來達成。一種與所接收的光有關而由光感測器-晶片 所產生的輸出信號經由各信號導線而向外送出且可在該外 殻的外部被測得。此外殻可設定在一電路板上,這例如可 藉由表面安裝技術(SMT)來達成。信號導線然後與該電路板 上的一條相對應的信號導線相連接。在另一形式中,該感 測器是以相對應的信號來與一種調整電路相連接,此調整 電路包含在該照明裝置本身中,特別是包含在該外殼中。 200842277 LED晶片和感測器-晶片可形成各種不同的配置。例如, 可存在三個LED晶片,其分別在不同的波長範圍中發光。 於是,可藉由混合來產生所期望的彩色。光感測器配置在 該三個半導體晶片之直接相鄰處且可偵測由該三個半導體 晶片所發出的光。當然,亦可在該外殻內部中配置少於二 個或多於三個的發光用的晶片。此外,該處亦可設置多於 一個的光感測器。 光感測器可接收寬光譜範圍中已發出的光或設有一種濾 色器,使只有特定波長的光或一狹窄的光譜區之光可導引 至該光感測器之活性區中。依據應用情況,可設有各種不 同的狀況。 在一種形式中,例如可使用三個LED晶片和一個光感測 器,其特別是可分別定位在一四邊形(特別是長方形或正方 形)的角隅之附近。於是,可形成一種由該三個LED晶片和 該光感測器所形成的點對稱式配置。另一方面,亦可將全 部的LED晶片和該光感測器以直線形式沿著一條直線而定 位著。該光感測器可配置在該三個LED晶片之邊緣上或亦 可配置在二個LED晶片之間。最後,直線形的定位方式和 長方形的定位方式亦可相組合。 本發明可應用在照明裝置之全部的應用情況中。例如, 本發明的一實施形式的照明裝置可用在傳統式LED陣列中 以對環境進行照明。藉由規則的光偵測、將所接收的光強 度來與一種門限(threshold)値相比較以及使發光LED之發 光量的反射回來的再控制,則可對每一 LED進行一種亮度 200842277 補償。此種亮度補償可在操作期間進行或例如在該照明裝 置接通或關閉時進行,但亮度補償對一觀看者而言短時間 內並未被查覺。於此,亦可使老化過程獲得補償。在不同 的LED晶片中老化過程已知是以不同方式來運行且會使不 同的LED在已老化之後具有不同的老化狀態以及發出不同 的光強度。藉由照明裝置以及整合在相同外殼中的光感測 器,則在操作時可動態地測得一 LED之個別的老化狀態且 然後可予以補償。 上述形式的照明裝置可特別有利地用來對一種液晶顯示 器(LCD)進行背光照明。此處,在該LCD之與環境相面對的 此側上且特別是與一觀看者相面對的此側上存在著多個 LCD-層,其顯示出一種大部份是以數位方式來表示的資 訊。在LCD-層的下方於偏離LCD-層的環境中存在著一光 源。在面積較大的一 L C D中,可以矩陣配置的方式設有多 個上述之照明裝置。全部的照明裝置在背景中都需提供相 同的光強度,這樣可確保背光照明的均勻性'。在一些實施 形式中,LCD內部的背光照明可以區段方式且依據LCD中 所顯示的資訊來控制。於是,可使所顯示的圖像資訊之對 比提高。 例如,可設有一控制裝置’其可接收及計算每一個別的 照明元件之個別的感測器-晶片的輸出信號且將一控制信號 發送回至LED晶片,以便對各種與老化-及/或溫度有關的 光強度的變動進行補償。 上述的照明裝置中LED晶片和感測器-晶片整合在一外 200842277 胃中’此種照明裝置在其使用時不限於此處以特殊情況所 示的應用例子中,而且在原理上亦可用於照明配置中,這 些照明配置至少在一相同的區段中需要均勻的光發射強 度。 本發明以下將依據圖式來詳述。 【實施方式】 各圖式中相同-或相對應的元件以相同的參考符號來表 示。各圖式和圖式中的各元件基本上未依比例尺來顯示。 ® 反之’爲了可較佳地被理解及/或爲了更清楚之故一些元件 可予以放大來顯示。 第1圖顯示一實施例之照明裝置之俯視圖。此照明裝置 1 0具有一外殻1 5,其圍繞一內部空間1 6。內部空間1 6中 存在四個半導體晶片,即,三個適合用來發光的晶片1 2, 1 3,1 4以及一個用來偵測光線的晶片1 1。用來發光的晶片 或LED晶片12, 13, 14分別用來在不同的波長中發出光束。 例如,半導體晶片12主要是一種發出紅光的LED,半導體 晶片1 3主要是一種發出綠光的LED,且半導體晶片1 4主要 是一種發出藍光的LED。藉由R,G和B用的LED,則可將 包括白光在內的所有色彩予以混合。亦可由個別的LED晶 片來產生不同的色彩。 半導體晶片1 1是一種以矽-偵測器來構成的光二極體, 其對入射光會敏感地發生反應且產生一種與入射光的強度 有關的電性輸出信號。 全部的晶片1 1,…1 4都沿著一直線1 7而對準。適當的 -10- 200842277 方式是將感測器晶片1 1配置在綠-晶片13和藍-晶片14之 間。晶片之其它不同順序的配置方式亦是可能的。例如, 全部的紅、綠、藍-晶片可依序配置著且感測器晶片1 1可位 於三個晶片配置的外部而與外殼壁相鄰。每一情況下該感 測器晶片11都與發光的晶片1 2,…1 4 一起配置在同樣由該 外殼1 5所圍繞的內部空間1 6之內部中。亦可將該感測器晶 片11與其它任意數目的發光半導體晶片配置在一外殼的內 部空間中’這些半導體晶片可以是只發出唯一的光的半導 體晶片或發出二種光的半導體晶片或發出多於三種的光的 半導體晶片。 第2圖中顯示另一照明裝置的俯視圖,其中四個半導體 晶片在由殼1 5所圍繞的空間1 6中定位成正方形的配置。半 導體外殼1 5包括一種具有圓形橫切面的空出區,其圍繞著 該空間1 6。在該空出區或該空間1 6之內部中在正方形1 8 之角隅處的附近配置著半導體晶片。個別的半導體晶片的 重心特別是可配置在正方形18之角隅181,182,183,184 上。感測器晶片1 1位於角隅1 84之附近。紅、綠、藍-晶片 1 2,1 3,1 4位於正方形1 8之其它的角隅上。在與第1圖相 比較下,感測器-晶片1 1至LED晶片1 2,1 3,1 4之平均距 離較小。該外殼之內部空間1 6可適當地以一種澆注物質來 塡入。於是,可使各元件之間形成良好的光學耦合。此外, 該澆注物質具有保護作用使不受外部的機械性所影響。在 另一實施形式中,亦可省略該澆注物質。依據應用上的情 況,亦可選擇性地設有一種透鏡體,其設定在該澆注物質 -11- 200842277 上或設定在該外殼基體上,以使所發出的光成束狀或被擴 大(未圖示)。 在操作時,LED晶片1 2,1 3,1 4被供應以電源電壓且發 出該晶片特有的波長範圍的光。所發出的光受到分散作 用,有一部份的光由具有反射性的外殼之側壁1 6 1所反射 且在經由該澆注物質之後發出?所發出的光的一部份耦合 至該感測器-晶片1 1中。該感測器-晶片1 1 (例如,一種光二 極體)因此產生一種電性的輸出信號,其與所接收的光強度 ® 有關。該感測器-晶片11在寬廣的光波長範圍中具有敏感 性。當半導體晶片1 1只在特定的波長範圍內被接收時,該 半導體晶片11可以一種適當的濾色材料來覆蓋。 第3圖顯示第2圖之照明裝置之沿著切線A-A所示的橫 切面。此橫切面顯示該反射器1 5之具有反射性的側壁1 6 1 ° 各側壁圍繞著一空間1 6,此空間1 6中以一種澆注物質1 62 來塡入。該外殻中在形成該空間1 6的凹口的底部上顯示藍 -晶片14(其是在藍色光譜區中發光的半導體本體)和上述的 ® 光敏感的光二極體1 1的橫切面。此二個晶片是與一共同的 接地線143相連接且具有另一極性的另外的信號終端。因 此,藍-晶片14經由一連結線142而與金屬式信號導線141 相連接。經由導線1 4 1來供應上述的電源電壓’使半導體 晶片1 4在操作時發出藍光。由半導體晶片1 4所發出的光例 如直接經由該澆注物質1 62而向外發出。晶片1 4中所產生 的光之一部份經由該側壁1 6 1而反射且到達該光偵、'測 1 1。光偵測器1 1經由一條連結線1 12而與一信號導線111 -12- 200842277 相連接。此信號導線1 π由該外殼的內部空間經由外殼壁 而向外延伸。金屬導線1 4 1,11 1相對應而形成,使該照明 裝置10可藉由表面安裝技術(SMT)而配置在一電路板上且 在電性上可相連接著。於是,該外殼具有一背面1 62,其可 使該外殼以該外殼的背面163而設定在該電路板上。金屬 導電軌1 4 1,1 1 1之相隔開的末端同樣在相同的平面中彎 曲。當導電軌141用來供應一種電源電壓時,由半導體感 測器1 1所產生的輸出信號可經由導電軌1 1 1而在該外殼1 5 之外部中被測得。例如,該導線1 1 1在一段延長的長度中 可與一控制器晶片(例如,一種微處理器)相連接。 第4圖中顯示背光照明用的液晶顯示器(LCD)之俯視圖。 此LCD顯示出上述以第2,3圖的方式所形成的照明裝置之 一種矩陣式配置。每一照明裝置(例如,20,21,22,23)都 用來對該LCD之某一面積區段進行背光照明。各LED已知 都將以不同方式老化且因此發出不同強度的光。此外,所 發出的光強度會隨著溫度而改變。因此,需要儘可能地將 LCD之背光照明的所有照明裝置進行修正,使各照明裝置 都可發出一種儘可能固定的光強度及/或一種彩色位置儘可 能固定的光且這是與老化及/或溫度所造成之可能存在的偏 差無關。 利用上述的照明裝置,則可藉由每一照明裝置20,2 1, 22 ’ 23之感測器晶片1 1以個別地發出由個別的位置所存在 的LED所發出的光強度,且因此在相連接的控制裝置1 20 中可對個別的LED進行一種修正和控制。須形成該控制裝 200842277 置120所進行的此種修正-和控制演算法,使回授回路 (feedback loop)可達成一種調整,以便全部的照明裝置20, 21,22, 23都可發出相同的光強度及/或相同彩色位置的光。 背光照明例如可依據LCD中所顯示的圖像內容而個別地 受到控制。例如,顯示成光亮的圖像內容可受到較強的背 光照明,而黑暗的圖像內容則受到較弱的背光照明。於是, 可使圖像的對比提高。由於在此種情況下可個別受到控制 的照明裝置20,21 ’ 22,23存在於該LCD之背光照明環境 ^ 中’則各照明裝置需要發出一種儘可能固定的參考用照明 強度。 最後,第5圖顯示第4圖所示的液晶顯示器之沿著直線 B _ B所示的橫切面。在表面附近,即,在外部的環境1 2 3附 近且特別是在面向一觀看者附近,存在著該液晶顯示器之 層配置121,其下方存在著一光學適應層122。此光學適應 層1 22例如用來使由個別的照明裝置2〇,2 1之三個LED所 產生的光達成一種均勻的混合,以便產生均勻的白光。該 光學適應層122下方存在著二個照明裝置20,21。 本發明當然不限於依據各實施例中所作的描述。反之, 本發明包含每一新的特徵和各特徵的每一種組合,特別是 包含各申請專利範圍-或不同實施例之個別特徵之每一種組 合,當相關的特徵或相關的組合本身未明顯地顯示在各申 請專利範圍中或各實施例中時亦屬本發明。 【圖式簡單說明】 弟1圖 一^照明裝置之俯視圖。 -14- 200842277 第2圖 另一照明裝置之俯視圖。 第3圖 是第2圖之照明裝置的橫切面。 第4圖一種具有背光照明用的照明裝置陣列的液晶顯 示器之俯視圖。 第5圖 是第4圖之LCD-顯示器之一部份的橫切面。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lighting device in which a semiconductor body suitable for light emission is disposed in a space surrounded by a casing. The invention further relates to a display device suitable for displaying information illuminated by the illumination device. Furthermore, the invention also relates to a method for operating the illumination device and a method for operating the display device. The present patent application claims the priority of the German Patent Application Nos. 10 2007 0 1 0 554.3 and the priority of [Prior Art] A conventional lighting device includes an outer casing having an vacant area defining a space in which a semiconductor body suitable for light emission is disposed. Such a lighting device is also referred to as a lighting device (LED). The potting material covers and protects the luminescent semiconductor wafer. The housing is suitable for mounting on a circuit board. The luminescence phenomenon achieved by semiconductor wafers is subject to a fluctuation caused by the aging process in the semiconductor wafer and inside the configuration and is also temperature dependent. Therefore, an appropriate configuration must be used in order to achieve a predetermined brightness by the LED, which is resistant to ageing and/or temperature. Such a configuration may include a photosensor that acts on the LED and compensates for a possible deviation from a predetermined chirp by a corresponding control measure. The above configuration is described, for example, in U.S. Patent Application No. US 2006/0066265 A1 200842277. This conventional configuration uses a split light sensor that is disposed on a circuit board external to the LED. This configuration is less likely to be integrated and the optical affinity between the LED and the photosensor is based on a separate configuration. Therefore, the conventional configuration can be applied only in the case of a modern display device having backlight illumination. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a lighting device in which optical coupling between an LED and a sensor can be improved. Furthermore, the illumination device is advantageously applied to a display device for backlighting. Likewise, the invention also relates to a corresponding method of operation. According to an embodiment of the invention, a lighting device is set in accordance with the features of item 1 of the scope of the patent application. A display device having the above illumination device is the subject of claim No. 10 of the patent application. The operation method of the lighting device or the display device is the subject matter of the patents Nos. 12 and 13. Other forms of illumination devices and display devices are described in the various dependent claims. The contents disclosed in the scope of the patent application are incorporated in the specification by reference in detail. The present invention provides a lighting device that includes a housing that surrounds a space. The illuminating device has a semiconductor body adapted to illuminate during operation, which is disposed in the interior of the space. Moreover, the illumination device has a light sensitive sensor disposed in the interior of the space and adapted to produce an output signal associated with the receipt of light. According to one form of the invention, the semiconductor body suitable for illumination and the sensor device, in particular the sensor described above, are integrated in a single housing. As a result of 200842277, a sufficient optical coupling between the illuminated semiconductor body and the photosensor device is achieved. The illuminated semiconductor body and photosensor device can each be constructed as a semiconductor wafer. For example, the photo sensor can be formed by a x-ray diode sensor. A sufficient portion of the light emitted by the LED chip can be reflected to the wall of the outer casing, and each wall surface also serves as a reflector, so that the light sensor-chip can directly receive the emitted light and/or Reflected light. In some embodiments, a potting material is provided that covers the LED wafer and/or photosensor wafer and is used to achieve good optical coupling between the various components disposed in the reflector housing. This casting material can also be omitted in other embodiments. The sensor may in particular be in the form of a light sensor/wafer, in one form the light sensor can be connected to a corresponding signal conductor to cause an electrical signal generated by the light sensor (its Indicates a detected light event) that can be emitted outward (ie, outside the enclosure). For example, the corresponding metal signal conductor can be guided by the housing wall so that it can be in contact with the photosensor-wafer on the terminal section of the signal conductor in the housing interior. Such contact can be achieved, for example, by direct-contact or via a tie line or other joining technique. An output signal associated with the received light and generated by the photosensor-wafer is sent outward via the respective signal conductors and is detectable outside of the housing. The housing can be set on a circuit board, which can be achieved, for example, by surface mount technology (SMT). The signal conductor is then connected to a corresponding signal conductor on the board. In another form, the sensor is coupled to an adjustment circuit in a corresponding signal, the adjustment circuit being included in the illumination device itself, and particularly included in the housing. 200842277 LED wafers and sensor-wafers can be formed in a variety of different configurations. For example, there may be three LED wafers that illuminate in different wavelength ranges, respectively. Thus, the desired color can be produced by mixing. The photo sensor is disposed adjacent to the three semiconductor wafers and detects light emitted by the three semiconductor wafers. Of course, it is also possible to arrange less than two or more than three illuminating wafers in the interior of the casing. In addition, more than one light sensor can be placed there. The light sensor can receive light that has been emitted in a wide spectral range or is provided with a color filter such that only light of a particular wavelength or light of a narrow spectral region can be directed into the active area of the light sensor. Depending on the application, different conditions can be set. In one form, for example, three LED chips and a light sensor can be used, which can be positioned, in particular, in the vicinity of a corner of a quadrilateral (especially rectangular or square). Thus, a point-symmetrical configuration formed by the three LED chips and the photo sensor can be formed. Alternatively, all of the LED chips and the photosensor can be positioned in a straight line along a straight line. The photo sensor can be disposed on the edge of the three LED chips or can also be disposed between two LED chips. Finally, the linear positioning method and the rectangular positioning method can also be combined. The invention can be applied to all applications of lighting devices. For example, an illumination device of an embodiment of the present invention can be used in a conventional LED array to illuminate the environment. Each of the LEDs can be compensated for a brightness of 200842277 by regular light detection, comparing the received light intensity to a threshold 以及 and re-reflecting the illuminating amount of the illuminating LED. Such brightness compensation can be performed during operation or, for example, when the illumination device is turned "on" or "off", but the brightness compensation is not detected by a viewer for a short period of time. Here, the aging process can also be compensated. The aging process in different LED wafers is known to operate in different ways and will cause different LEDs to have different aging states after aging and to emit different light intensities. By means of the illumination device and the light sensor integrated in the same housing, an individual aging state of an LED can be dynamically measured during operation and can then be compensated. Illumination devices of the above type are particularly advantageous for backlighting a liquid crystal display (LCD). Here, there are a plurality of LCD-layers on the side of the LCD facing the environment and especially on a side facing a viewer, which exhibits a majority in a digital manner. Information expressed. There is a light source in the environment below the LCD-layer that deviates from the LCD-layer. In a larger L C D area, a plurality of the above illumination devices can be provided in a matrix configuration. All lighting fixtures need to provide the same light intensity in the background to ensure uniformity of backlighting'. In some implementations, backlighting within the LCD can be controlled in a segmented manner and in accordance with information displayed in the LCD. Thus, the contrast of the displayed image information can be improved. For example, a control device can be provided that can receive and calculate individual sensor-wafer output signals for each individual illumination element and send a control signal back to the LED wafer for various aging-and/or The temperature-dependent change in light intensity is compensated. In the above illumination device, the LED chip and the sensor-wafer are integrated in the outer stomach of 200842277. The illumination device is not limited to the application example shown in the special case here, and can also be used for illumination in principle. In a configuration, these illumination configurations require a uniform light emission intensity in at least one of the same segments. The invention will be described in detail below with reference to the drawings. [Embodiment] The same or corresponding elements in the respective drawings are denoted by the same reference symbols. The elements in the various figures and figures are substantially not shown in scale. ® </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> some of the elements may be exaggerated for better understanding and/or for clarity. Figure 1 shows a plan view of an illumination device of an embodiment. The illuminating device 10 has a housing 15 which surrounds an internal space 16. There are four semiconductor wafers in the internal space 16 , i.e., three wafers 1 2, 1 3, and 14 suitable for light emission and a wafer 11 for detecting light. The wafers or LED chips 12, 13, 14 used to illuminate are used to emit light beams at different wavelengths, respectively. For example, the semiconductor wafer 12 is mainly an LED that emits red light, the semiconductor wafer 13 is mainly an LED that emits green light, and the semiconductor wafer 14 is mainly an LED that emits blue light. With the LEDs for R, G and B, all colors including white light can be mixed. Individual LEDs can also be used to produce different colors. The semiconductor wafer 11 is a photodiode constructed of a 矽-detector that reacts sensitively to incident light and produces an electrical output signal related to the intensity of the incident light. All of the wafers 1, 1, ..., 1 4 are aligned along a straight line 17. A suitable -10- 200842277 approach is to arrange the sensor wafer 11 between the green-wafer 13 and the blue-wafer 14. Other different order configurations of the wafer are also possible. For example, all of the red, green, and blue-wafers may be sequentially disposed and the sensor wafer 11 may be located outside of the three wafer configurations adjacent to the outer casing wall. In each case, the sensor wafer 11 is arranged with the illuminated wafers 1 2, ... 1 4 in the interior of the internal space 16 which is likewise surrounded by the housing 15. The sensor wafer 11 and any other number of light emitting semiconductor wafers may also be disposed in the inner space of the outer casing. 'The semiconductor wafers may be semiconductor wafers emitting only a single light or semiconductor wafers emitting two kinds of light or emitting more Three kinds of light semiconductor wafers. A top view of another illumination device is shown in Fig. 2, in which four semiconductor wafers are positioned in a square configuration in a space 16 surrounded by a housing 15. The semiconductor housing 15 includes an vacant area having a circular cross-section that surrounds the space 16. A semiconductor wafer is disposed in the vicinity of the corner of the square 18 in the vacant area or the inside of the space 16. The center of gravity of the individual semiconductor wafers can in particular be arranged on the corners 18, 182, 183, 184 of the square 18. The sensor wafer 1 1 is located near the corner 隅 1 84. Red, green, and blue-wafers 1 2,1 3,1 4 are located on the other corners of the square 18. In comparison with Figure 1, the average distance between the sensor-wafer 11 to the LED wafers 12, 13 and 14 is small. The inner space 16 of the outer casing can be suitably twisted with a potting substance. Thus, a good optical coupling between the elements can be achieved. Furthermore, the potting substance has a protective effect that is not affected by external mechanical properties. In another embodiment, the potting substance can also be omitted. Depending on the application, a lens body may be selectively provided on the casting material -11-200842277 or on the housing base to bundle or expand the emitted light (not Graphic). In operation, the LED chips 12, 13 and 14 are supplied with a supply voltage and emit light of a wavelength range specific to the wafer. The emitted light is distracted, and a portion of the light is reflected by the side wall 116 of the reflective outer casing and is emitted after passing through the casting material. A portion of the emitted light is coupled into the sensor-wafer 11. The sensor-wafer 1 1 (e.g., a photodiode) thus produces an electrical output signal that is related to the received light intensity ® . The sensor-wafer 11 is sensitive over a wide range of optical wavelengths. When the semiconductor wafer 11 is received only in a specific wavelength range, the semiconductor wafer 11 can be covered with a suitable color filter material. Fig. 3 shows a cross section of the illumination device of Fig. 2 along the tangential line A-A. This cross-section shows the reflective side walls of the reflector 15 1 1 1 ° The side walls surround a space 16 in which a potting substance 1 62 is inserted. In the outer casing, a blue-wafer 14 (which is a semiconductor body that emits light in the blue spectral region) and a cross-section of the above-mentioned light-sensitive photodiode 1 1 are shown on the bottom of the recess forming the space 16. . The two wafers are additional signal terminals that are connected to a common ground line 143 and have another polarity. Therefore, the blue-wafer 14 is connected to the metal signal wiring 141 via a connection line 142. The above-described power supply voltage ' is supplied via the wire 141 to cause the semiconductor wafer 14 to emit blue light during operation. The light emitted by the semiconductor wafer 14 is emitted outwardly, e.g., directly via the potting compound 162. A portion of the light generated in the wafer 14 is reflected by the sidewall 161 and reaches the optical detector. The photodetector 1 1 is connected to a signal conductor 111 -12 - 200842277 via a connecting line 1 12 . This signal conductor 1 π extends outwardly from the inner space of the outer casing via the outer casing wall. The metal wires 144, 11 1 are formed correspondingly such that the illuminating device 10 can be disposed on a circuit board by surface mount technology (SMT) and electrically connected. Thus, the housing has a back side 1 62 that allows the housing to be placed on the circuit board with the back side 163 of the housing. The spaced ends of the metal conductor rails 1 4 1,1 1 1 are also curved in the same plane. When the conductor rail 141 is used to supply a supply voltage, the output signal produced by the semiconductor sensor 11 can be measured in the exterior of the housing 15 via the conductor rail 1 1 1 . For example, the wire 111 may be coupled to a controller wafer (e.g., a microprocessor) for an extended length of time. Fig. 4 is a plan view showing a liquid crystal display (LCD) for backlighting. This LCD shows a matrix configuration of the above-described illumination device formed in the manner of Figs. 2 and 3. Each illumination device (e.g., 20, 21, 22, 23) is used to backlight a certain area of the LCD. Each LED is known to age in different ways and thus emit light of different intensities. In addition, the intensity of the light emitted will vary with temperature. Therefore, it is necessary to correct all the illumination devices of the backlight of the LCD as much as possible, so that each illumination device can emit a light intensity that is as fixed as possible and/or a color position that is as fixed as possible and which is related to aging and/or Or the possible deviation caused by temperature is irrelevant. With the illumination device described above, the sensor wafer 11 of each illumination device 20, 21, 22' 23 can individually emit the light intensity emitted by the LEDs present at the individual locations, and thus A separate control and control can be performed on the individual LEDs in the connected control unit 120. The correction-and control algorithm performed by the control device 200842277 120 must be formed so that the feedback loop can achieve an adjustment so that all of the illumination devices 20, 21, 22, 23 can emit the same Light intensity and/or light at the same color location. Backlighting can be individually controlled, for example, depending on the image content displayed in the LCD. For example, image content displayed as bright may be subject to strong backlight illumination, while dark image content may be subject to weak backlighting. Thus, the contrast of the image can be improved. Since the individually controllable illumination devices 20, 21 ' 22, 23 are present in the backlighting environment of the LCD, then each illumination device needs to emit a reference illumination intensity that is as fixed as possible. Finally, Fig. 5 shows a cross section of the liquid crystal display shown in Fig. 4 along a line B_B. In the vicinity of the surface, i.e., in the vicinity of the external environment 1 2 3 and particularly in the vicinity of a viewer, there is a layer configuration 121 of the liquid crystal display, below which an optically compliant layer 122 is present. The optically compliant layer 1 22 is used, for example, to achieve a uniform mixing of the light produced by the three LEDs of the individual illumination devices 2, 21 to produce uniform white light. There are two illumination devices 20, 21 below the optically accommodating layer 122. The invention is of course not limited to the description made in accordance with the various embodiments. Conversely, the present invention encompasses each novel feature and each combination of features, and in particular each of the various combinations of the various embodiments of the invention, or the individual features of the different embodiments, when the relevant features or related combinations are not The invention is also shown in the scope of each patent application or in the various embodiments. [Simple description of the drawing] Brother 1 picture 1 ^ Top view of the lighting device. -14- 200842277 Fig. 2 Top view of another lighting device. Fig. 3 is a cross section of the lighting device of Fig. 2. Figure 4 is a plan view of a liquid crystal display having an array of illumination devices for backlighting. Figure 5 is a cross-section of a portion of the LCD-display of Figure 4.

【主要元件符號說明】 10 照明裝置 11 感測器晶片 12 發出紅光的半導體晶片 13 發出綠光的半導體晶片 14 發出藍光的半導體晶片 15 外殼 16 內部空間 17 直線 18 正方形 20 〜23 照明裝置 111 信號導線 112 連結線 120 控制裝置 121 層配置 122 光學適應層 123 環境 141 信號導線 142 連結線 200842277 143 接地線 161 側壁 162 澆注物質 163 背面 181 〜184 角隅[Main component symbol description] 10 Illumination device 11 Sensor wafer 12 Red semiconductor wafer 13 Green light semiconductor wafer 14 Blue light semiconductor wafer 15 Housing 16 Internal space 17 Straight line 18 Square 20 to 23 Illumination device 111 Signal Wire 112 connection line 120 control device 121 layer configuration 122 optical adaptation layer 123 environment 141 signal conductor 142 connection line 200842277 143 ground line 161 side wall 162 casting material 163 back 181 ~ 184 corner

Claims (1)

200842277 十、申請專利範圍: 1. 一種照明裝置,包括: 一 一外殼,其具有一由外殼(15)所圍繞的空間(16); - 一在操作時用來發光之半導體本體(12,13,14),其配 置在該空間(16)之內部; -一光敏感的感測器(11),其配置在該空間(16)之內部且 用來產生一種與光的接收有關的輸出信號。 2. 如申請專利範圍第1項之照明裝置,其中用來發光之半導 體本體(12,13,14)是一種發光之半導體二極體且該光敏 感的感測器(1 1)是一種半導體光二極體。 3. 如申請專利範圍第1或2項之照明裝置,其中在該空間(1 6) 中配置多個(較佳是三個)用來發光之半導體本體(12,13, 14),該多個半導體本體(12,13’ 14)適合在不同的波長範 圍中發光。 4. 如申請專利範圍第1至3項中任一項之照明裝置,其中形 成該光敏感的感測器(1 1)’以偵測一種預定彩色之所接收 的光。 5. 如申請專利範圍第1至4項中任一項之照明裝置’其中該 光敏感的感測器(11)是與至少一電性的信號導線(111)相連 接,該信號導線(111)由該空間(16)經由外殼(15)而延伸至 一種圍繞該外殼的外部區域中’該信號導線(111)在該外部 區域中具有一終端以測得該感測器所產生的輸出信號。 6. 如申請專利範圍第1至5項中任一項之照明裝置,其中用 來發光之半導體本體(12, 13’ 14)和該光敏感的感測器(11) 200842277 在光學上互相耦合。 7. 如申請專利範圍第6項之照明裝置,其中用來發光之半導 體本體(1 2,1 3,1 4)和該光敏感的感測器(1 1)是由一澆注物 質(162)所圍繞著。 8. 如申請專利範圍第1至7項中任一項之照明裝置,其中設 有在操作時至少三個在不同的波長中用來發光之半導體 本體(12,13,14),其中此至少三個半導體本體的每一個 以及該光敏感的感測器(11)在由外殼(1 5)所圍繞的空間 (16)中分別定位在一種假想的長方形(18)之角隅(181 ’ 182,183,184)之區域中。 9. 如申請專利範圍第1至8項中任一項之照明裝置,其中設 有在操作時至少三個在不同的波長中用來發光之半導體 本體(12,13,14),其中此至少三個半導體本體以及該光 敏感的感測器(11)沿著一直線(17)而對準且配置在由該外 殻(15)所圍繞的空間(16)中。 1 0. —種顯示裝置,包括: -一種面向外部環境(123)之第一平面式功能元件(121),其 適合用來以光學方式顯示所傳送的資訊,以及 -至少一由外部環境(123)遠離的如申請專利範圍第1至9 項中任一項所述的照明裝置(20,21),其用來對該功能 元件(1 2 1)進行背光照明。 11.如申請專利範圍弟1 〇項之顯不裝置^另外又包括· -一控制裝置(120),藉此以依據由配置在同一個外殼中的 光敏感的感測器(11)所發出之傳送至該控制裝置(120)的 200842277 信號來對操作時由半導體本體(12,13,14)所發出的光 之亮度進行調整。 12.—種如申請專利範圍第1至9項中任一項之照明裝置的操 作方法,包括以下步驟: -施加一種電源電壓至用來發光之半導體本體(12, 13, 14) 且發出光束, -藉由該配置在與半導體本體(12,13,14)相同的由該外 殼(1 5 )所圍繞的空間(1 6)中的光敏感之感測器(1 1)來接 • 收該已發出的光之至少一部份, -依據該感測器(1 1)中所接收的光而產生一種輸出信號, 且在該照明裝置之外殼(15)的外部發出該輸出信號,以 及 * -依據所發出的輸出信號來控制該照明裝置之半導體本 ' 體(12 , 13 , 14)。 13·—種如申請專利範圍第10或丨丨項之顯示裝置的操作方 法,包括以下步驟: # ''在多個已存在的照明裝置中藉由半導體本體(12, 13, 14) 而發出光束, -藉由該配置在與半導體本體相同的該外殼(1 5)中的光敏 感的感測器(11)來接收該已發出的光之至少一部份, -藉由該感測器(11)來產生個別的輸出信號且傳送至一控 制裝置(120), -以不同方式來控制多個照明裝置之半導體本體(1 2,1 3, 1 4),使全部的照明裝置都發出一種與老化及/或溫度無 關之相同的光強度。 -19-200842277 X. Patent application scope: 1. A lighting device comprising: a casing having a space (16) surrounded by a casing (15); - a semiconductor body for emitting light during operation (12, 13) , 14), disposed inside the space (16); a light-sensitive sensor (11) disposed inside the space (16) and used to generate an output signal related to the reception of light . 2. The illumination device of claim 1, wherein the semiconductor body (12, 13, 14) for emitting light is a light-emitting semiconductor diode and the light-sensitive sensor (11) is a semiconductor Light diode. 3. The illumination device of claim 1 or 2, wherein a plurality of (preferably three) semiconductor bodies (12, 13, 14) for emitting light are disposed in the space (16), The semiconductor bodies (12, 13' 14) are suitable for illuminating in different wavelength ranges. 4. The illumination device of any of claims 1 to 3, wherein the light sensitive sensor (11) is formed to detect received light of a predetermined color. 5. The illumination device of any one of claims 1 to 4 wherein the light sensitive sensor (11) is connected to at least one electrical signal conductor (111), the signal conductor (111) Extending from the space (16) via the outer casing (15) to an outer region surrounding the outer casing, the signal conductor (111) has a terminal in the outer region to measure an output signal produced by the sensor . 6. The illumination device of any one of claims 1 to 5, wherein the semiconductor body (12, 13' 14) for emitting light and the light sensitive sensor (11) 200842277 are optically coupled to each other . 7. The illumination device of claim 6, wherein the semiconductor body (1 2, 1 3, 14) for emitting light and the light sensitive sensor (1 1) are made of a potting substance (162) Surrounded by. 8. The illumination device of any one of claims 1 to 7 wherein there are at least three semiconductor bodies (12, 13, 14) for emitting light at different wavelengths during operation, wherein at least Each of the three semiconductor bodies and the light-sensitive sensor (11) are respectively positioned in an imaginary rectangular (18) corner 隅 (181 '182) in a space (16) surrounded by the outer casing (15). , 183, 184) in the area. 9. The illumination device of any one of claims 1 to 8, wherein at least three semiconductor bodies (12, 13, 14) for emitting light at different wavelengths are provided, wherein the at least The three semiconductor bodies and the light-sensitive sensor (11) are aligned along a straight line (17) and are disposed in a space (16) surrounded by the outer casing (15). A display device comprising: - a first planar functional element (121) facing the external environment (123) adapted to optically display the transmitted information, and - at least one from the external environment ( 123) A lighting device (20, 21) as claimed in any one of claims 1 to 9 for backlighting the functional element (1 21). 11. A device according to the scope of claim 1 further includes a control device (120) for emitting light sensitive sensors (11) arranged in the same housing The 200842277 signal transmitted to the control device (120) adjusts the brightness of the light emitted by the semiconductor body (12, 13, 14) during operation. 12. The method of operating a lighting device according to any one of claims 1 to 9, comprising the steps of: - applying a supply voltage to the semiconductor body (12, 13, 14) for emitting light and emitting a beam - by means of this configuration, the light sensitive sensor (1 1) in the space (16) surrounded by the outer casing (15) is identical to the semiconductor body (12, 13, 14) At least a portion of the emitted light, - generating an output signal based on light received in the sensor (1 1), and outputting the output signal outside the housing (15) of the illumination device, and * - Controls the semiconductor body (12, 13, 14) of the illumination device based on the output signal that is emitted. 13. The method of operation of a display device according to claim 10, wherein the method comprises the following steps: # ''In a plurality of existing lighting devices, the semiconductor body (12, 13, 14) is issued a light beam, - by means of the light-sensitive sensor (11) arranged in the same housing (15) as the semiconductor body, receiving at least a portion of the emitted light, by means of the sensor (11) to generate individual output signals and transmit them to a control device (120), - to control the semiconductor bodies (1 2, 1 3, 14) of the plurality of illumination devices in different ways, so that all the illumination devices are issued A light intensity that is the same regardless of aging and/or temperature. -19-
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