200839600 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種記憶體儲存技術，特別是一種多磁區 記憶裝置及磁區分割方法。 【先前技術】 數位科技的快速發展與3C產品的普及，未來記憶卡逐 漸往高容量的趨勢發展，且隨著半導體製程技術的演進，晶 圓奈米製程與封裝堆疊技術更是使記憶卡的儲存容量不斷擴 充。然而，記憶卡容量越高儲存内容越大，如何將其内資料 作有效控管變成非常重要。若是部份資料毁損或是操作錯誤 都有可能使其内資料全部消失，記憶容量越大越需要將其内 記憶體分割作有效的管理。 【發明内容】 為了解決上述問題，本發明目的之一係提供一種多磁區 記憶裝置及磁區分割方法，利用外接一跨接器可獨立分開控 制或是同時控制記憶卡内兩顆以上的記憶體晶粒。 本發明目的之一係提供一種多磁區記憶裝置及磁區分 割方法，藉由利用一跨接器插設於具有一内接插槽之記憶卡 上，此多磁區記憶裝置具有與市面上記憶卡相容之規格與尺 寸，故可相容使用於所需產品上且不會影響薄型記憶卡的插 200839600 本發明目的之一係提供一種多磁區記憶裝置及磁區分 割方法，消費者使用此多磁區記憶裝置進行格式化、删除或 備份時，可選擇所需要之磁區進行資料處理。 為了達到上述目的，本發明一實施例之多磁區記憶裝 置，係包括：一記憶卡，係包含複數個記憶單元於其内；一内接插 槽，係設置於^憶卡上；以及一跨接器，係插設於記憶卡之内接插槽 上用以改變記憶卡内部之一電路為一多磁區電路。 本發明另一實施例之磁區分割方法，係適用於一記憶卡， 此方法包括：提供一記憶卡，其中此記憶卡係具有複數個記憶單元 於其内且一内接插槽係設置於記憶卡上；以及提供一跨接器插設於記 憶卡之内接插槽上用以改變記憶卡内部之一電路為一多磁區電路。 【實施方式】 請參照第1A圖、第1B圖與第1C圖，於一實施例中，多 磁區記憶裝置300包括：一記憶卡1〇〇 ; —内接插槽11〇設置於 記憶卡1〇〇上；以及一跨接器200插設於記憶卡1〇〇之内接插槽ι1〇 上。其中’記憶卡係具有與數位安全記憶卡（Secure Digital200839600 IX. Description of the Invention: [Technical Field] The present invention relates to a memory storage technology, and more particularly to a multi-magnetic area memory device and a magnetic domain segmentation method. [Prior Art] The rapid development of digital technology and the popularity of 3C products, the future of memory cards is gradually moving toward high-capacity trends, and with the evolution of semiconductor process technology, wafer nano-process and package stacking technology make memory cards Storage capacity continues to expand. However, the higher the memory card capacity, the larger the storage content, and how to effectively control the data within it becomes very important. If some data is damaged or the operation is wrong, it is possible that all the data will disappear. The larger the memory capacity, the more the internal memory needs to be divided into effective management. SUMMARY OF THE INVENTION In order to solve the above problems, one object of the present invention is to provide a multi-magnetic area memory device and a magnetic domain segmentation method, which can independently control or simultaneously control two or more memories in a memory card by using an external jumper. Body grain. One of the objects of the present invention is to provide a multi-magnetic area memory device and a magnetic area dividing method, which are inserted into a memory card having an internal socket by using a jumper, and the multi-magnetic area memory device has a commercial Memory card compatible specifications and sizes, so it can be compatible with the required products without affecting the thin memory card. 200839600 One of the objects of the present invention is to provide a multi-magnetic area memory device and a magnetic domain segmentation method for consumers. When using this multi-magnetic area memory device for formatting, deletion or backup, you can select the required magnetic area for data processing. In order to achieve the above object, a multi-magnetic area memory device according to an embodiment of the present invention includes: a memory card including a plurality of memory units therein; an internal socket disposed on the memory card; The jumper is inserted into the inner socket of the memory card to change one of the circuits inside the memory card into a multi-magnetic circuit. A magnetic zone segmentation method according to another embodiment of the present invention is applicable to a memory card. The method includes: providing a memory card, wherein the memory card has a plurality of memory cells therein and an internal socket is disposed in the The memory card is provided; and a jumper is inserted into the inner socket of the memory card for changing a circuit inside the memory card to be a multi-magnetic circuit. [Embodiment] Referring to FIG. 1A, FIG. 1B and FIG. 1C, in one embodiment, the multi-magnetic area memory device 300 includes: a memory card 1; - an internal socket 11 is disposed on the memory card 1 〇〇; and a jumper 200 is inserted in the internal slot ι1〇 of the memory card 1〇〇. Among them, the memory card has a digital security card (Secure Digital
Memory Card，SD Card)、微型數位安全記憶卡（Micro SD Card)、迷你數位安全記憶卡（Mini SD Card)、USB微型隨 身碟（UFD )、多媒體 §己憶卡（Multi Media Memory Card， MMC Card )或壓 Ifs 快閃 έ己憶卡（Compact Flash Memory Card，CF Card)相容之規格與尺寸。 接續上述說明，記憶卡100係包括複數個記憶單元（圖上未 示），如記憶體晶粒，於其内。跨接器200插設於記憶卡100之内接 插槽110上會改變記憶卡100内部之一電路為一多磁區電路。參照 第1B圖，記憶卡100與跨接器200組合成之多磁區記憶裝置300 6 200839600 係具有與現有之數位安全記憶卡、微型數位安全記憶卡、迷你 數位安全記憶卡、USB微塑隨身碟、多媒體記憶卡或壓縮快 閃記憶卡相容之規袼與尺寸。故，利用記憶卡100上的金手 指12 ’本發明多磁區記憶裝置可相容使用於既有的電子產品 上且不影響其插接狀態。 mMemory Card, SD Card), Micro SD Card, Mini SD Card, USB Mini Flash Drive (UFD), Multimedia DDR Card (Multi Media Memory Card, MMC Card) ) or press the Ifs flash card (Compact Flash Memory Card, CF Card) compatible specifications and sizes. Following the above description, the memory card 100 includes a plurality of memory cells (not shown), such as memory chips, therein. Inserting the jumper 200 into the internal socket 110 of the memory card 100 changes one of the circuits inside the memory card 100 to a multi-magnetic circuit. Referring to FIG. 1B, the memory card 100 and the jumper 200 are combined into a multi-magnetic area memory device 300 6 200839600, which has the existing digital security memory card, micro digital security memory card, mini digital security memory card, USB micro plastic portable The size and size of a disc, multimedia memory card or compressed flash memory card. Therefore, the multi-magnetic area memory device of the present invention can be used compatible with existing electronic products without affecting the plugged state thereof. m
繼續請參照第2圖，於一實施例中，記憶卡1〇〇包括：一基板 10 ;至少一控制單元30 ;以及一塑封元件40設置於基板10上用以包 覆記憶單元與控制單元。其中，複數個記憶單元，如記憶體晶粒2〇 與22，係設置於基板1〇上並與基板1〇電性連接。控制單元邓，如 控制晶片，亦設置於基板1〇上並與基板1〇電性連接。 ^ 接著，如第2圖所示，内接插槽110係由塑封元件40所構成。 複數個内部導電接點5 〇設置於内接插槽11 〇且内部導電接點50 係與i己憶卡100之電路（圖上未示）電性連接。另外，跨接器設 外部導電接點60用以與内接插槽110内之内部導電接點 少:本^月中’跨接斋200插設於記憶卡1〇〇之内接插槽110上 憶卡⑽内部之—電路為—多磁區電路以達到磁區 刀割之效立果。請參照第3Α圖、第3β圖與第冗圖，當跨接器· ’彡_铺導通控 之至少-個‘。J 粒2G與記憶體晶粒22)其中 與記憶體晶粒2〇盘22故斤二多磁區電路導通控制單元30 入相關產。士 4 欠於本實施例中’記憶裝置300插 入相關產4進行資料存 300内之記憶體晶粒2。 使::了叫對仏I置 则所示，物區電路料 料又，如第 而不導通控制單元3G與^^制早'3G與記憶體晶粒22 與記憶體晶粒2G間係為―;日日粒20 (即晶片控制單元3〇 '、’、、、開路現象）。使用者僅能對記憶裝 7 200839600 置300内之記憶體晶粒22進行資 憶體晶粒20進行資料處理與存取:处理與存取，而不能對記 磁區電路僅導通控制單元3〇與記搞:反之，如第3C圖所示，多 對記憶裝置300内之記憶體晶教2〇思體明教20，使用者僅能 本發明之磁區分财法係適心―了讀處理與存取。 示，首先，提供一記憶卡，其中記憶卡係晨°己憶卡。如第4圖所 内且一内接插槽係設置於記憶卡上（步驟糸具有複數個記憶單元於其 器插設於記憶卡之内接插槽上用以改變記Sl0)。接著，提供一跨接 磁區電路（步驟S20)。跨接器上的外=内部之一電路為一多 槽内之内部導電接點電性連接，進電接點會與内接插 接改變原來電路成為一多磁區電路。與^憶卡内電路電性連 導通控制單元與記憶單元作為分割整區電路藉由是否 於多磁區電路中，記憶單元其中之至少j憶體磁區之依據。 導通可用來對被導通之記,It單元進行二^係與控制單元被 之記憶單元則無法進行資料存取。、广子取。剩餘未導通 曰綜合上述，本發明利用外接_跨接器可獨立分開控制或 是同時控制記憶卡内兩顆以上的記憶體晶粒；跨接器插設於 具有-内接插槽之記憶卡上，所組成之多^ 與市面上記憶卡相容之規袼與尺寸，故 ϋ = 品上且不會影響薄型記憶卡的插接;消費二== 式化、刪除或備份時，可選擇所需要之磁區進 以上所述之實施例僅係為說明本發明之技術思相 點，其目的在使《此項技藝之人士能夠瞭解本發^内容 亚據以實施，當不能以之限定本發明之專利範圍，即大凡依 本發明所揭示之精神所作之均等變化或 發明之專利範圍内。 仍應涵盍在本 8 200839600 【圖式簡單說明】 弟1A圖與第iB圖所示為根據本發明一實施例之俯視示意圖。 第1C圖所示為第ία圖之側視示意圖。 第2圖所示為根據本發明一實施例之側視剖面示意圖。 第3A圖、第3B圖與第3C圖所示為本發明一實施例之同 態之示意圖。 +…施狀 第4圖所示為本發明一實施例之流程示意圖。 【主要元件符號說明】Continuing to refer to FIG. 2, in an embodiment, the memory card 1 includes: a substrate 10; at least one control unit 30; and a molding component 40 disposed on the substrate 10 for covering the memory unit and the control unit. The plurality of memory cells, such as the memory chips 2A and 22, are disposed on the substrate 1A and electrically connected to the substrate 1A. The control unit Deng, such as a control chip, is also disposed on the substrate 1A and electrically connected to the substrate 1A. ^ Next, as shown in FIG. 2, the inner socket 110 is composed of a molding element 40. A plurality of internal conductive contacts 5 are disposed in the internal socket 11 and the internal conductive contacts 50 are electrically connected to a circuit (not shown) of the memory card 100. In addition, the jumper is provided with an external conductive contact 60 for less internal conductive contacts in the inner socket 110: in the middle of the month, the 'cross-connected 200 is inserted into the inner socket 110 of the memory card 1 The internal circuit of the card (10) is a multi-magnetic circuit to achieve the effect of the magnetic zone cutting. Please refer to the 3rd, 3rd, and 2nd diagrams, when the jumper·’彡_ is paved to at least one of the controls. The J grain 2G and the memory die 22) are related to the memory die 2 disk 22 and the multi-magnetic circuit conduction control unit 30. In the present embodiment, the memory device 300 is inserted into the memory die 2 in the data storage 300. Let:: the name of the 仏I is set, the circuit material of the object area, such as the first non-conducting control unit 3G and ^^ early '3G and the memory die 22 and the memory die 2G ―; 日日粒20 (ie wafer control unit 3〇', ',,, open circuit phenomenon). The user can only perform data processing and access to the memory die 22 in the memory die 22 of the memory device 7 200839600 300: processing and access, and can not turn on the control unit 3 only for the magnetic circuit. In contrast, as shown in FIG. 3C, the memory of the memory device 300 is a plurality of memory crystals. The user can only use the magnetic division of the invention to be suitable for reading and processing. access. First, a memory card is provided, wherein the memory card is a morning card. As shown in Fig. 4, an internal socket is disposed on the memory card (step 糸 has a plurality of memory units inserted in the internal socket of the memory card to change the record S10). Next, a jumper magnetic circuit is provided (step S20). One of the external/internal circuits on the jumper is electrically connected to the internal conductive contacts in a plurality of slots, and the incoming contacts are connected to the internal connections to change the original circuit to become a multi-magnetic circuit. The circuit is electrically connected to the internal circuit of the card and the memory unit is used as the partitioning of the whole circuit. The circuit is based on whether or not the memory unit is at least in the multi-magnetic circuit. The conduction can be used to access the data, and the It unit performs the data access to the memory unit. Take Guangzi. In addition, the present invention utilizes an external _cross-connector to independently control or simultaneously control two or more memory dies in the memory card; the jumper is inserted in a memory card having an internal socket In the above, the composition of the ^ is compatible with the size and size of the memory card on the market, so ϋ = the product does not affect the insertion of the thin memory card; when the consumption two ==, delete or backup, you can choose The embodiments described above are merely illustrative of the technical aspects of the present invention, and are intended to enable those skilled in the art to understand the contents of the present invention and to implement them. The scope of the invention is to be construed as being limited by the scope of the invention and the scope of the invention. Still referring to this document 8 200839600 [Simplified Schematic] A schematic view of a first embodiment of the present invention is shown in FIG. 1A and FIG. Figure 1C shows a side view of the ία diagram. 2 is a side cross-sectional view showing an embodiment of the present invention. 3A, 3B and 3C are schematic views showing the same state of an embodiment of the present invention. Fig. 4 is a flow chart showing an embodiment of the present invention. [Main component symbol description]
10 基板 12 金手指 20 記憶體晶粒 22 記憶體晶粒 3〇 控制單元 4〇 塑封元件 50 内部導電接點 60 外部導電接點 1〇〇記憶卡 110 内接插槽 200跨接器 300記憶裝置 S10提供具有一内接插槽之一記憶卡 S20插設一跨接器於内接插槽上改變記憶卡内部之一泰、 多磁區電路 σ -電路為一 910 substrate 12 gold finger 20 memory die 22 memory die 3 〇 control unit 4 〇 plastic package component 50 internal conductive contact 60 external conductive contact 1 〇〇 memory card 110 internal socket 200 jumper 300 memory device The S10 provides a memory card with an internal socket S20 inserted into a jumper on the internal socket to change one of the internals of the memory card, the multi-magnetic circuit σ-circuit is a 9