.200837491 九、發明說明： 【發明所屬之技術領域】 種利用該曝光光罩製造 本發明涉及一種曝光光罩及一 薄膜圖案層之方法。 【先前技術】 目前製造薄膜圖案層之 一…〜種方法係喷墨法，該喷墨法 為提供-具有由複數分隔牆限定之複數收容空間之基板，1987. The invention relates to a method of fabricating an exposure mask and a film pattern layer. [Prior Art] One of the methods for fabricating a thin film pattern layer is an ink jet method for providing a substrate having a plurality of housing spaces defined by a plurality of partition walls.
2-喷墨裝置將形成薄膜材料之墨水喷人該複數收容空 曰’内，墨水被固化後於該基板上形成預定之薄膜圖案層。 由於製量簡化’材料使用經濟，因此成本大幅降：。 先月'm技術中’該複數分隔牆藉由於基板上塗敷 遥阻材料，將具有預定圖案之光罩設於光阻材料上，進行 j及顯影，或加上钱刻製程，而形成於基板上。為了形 鉍’膜圖案，稷數收容空間之分佈需與薄膜圖案分佈一 ==此’對聽複數收容”之綠材料係被去除，而 曝先光罩之功能區域分佈也要對應於收容空間之分佈。一 ^曝光光罩對應於複數收容空間之複數功能區域係呈矩 …故二限定每個收容空間之分隔牆圍成一矩形。 v丄!^藉由般曝光光罩曝光後光阻材料進行顯影步驟 次、y I薄，圖案部分之光阻材料時，該顯影步驟係於化學 麵列、砰^丁其由被曝光後光阻材料自上而下的—個顯影/ 於二=私故圍成矩形之分隔牆之長邊（或短邊）沿垂直 腰I其Γ之長邊（或短邊）之戴面為一梯形，該梯形之一 。土反之夾角為一個銳角，如圖1所示。而矩形分隔 200837491 牆沿該矩形之一内角平分線之截面近似為一矩形，其内角 θ2接近90度，如圖2所示，且θ2大於θι。由^墨讀於 =接觸角為-^值’_角度02及θι不同，墨水對應= 高度也不同’因此’會造成墨水被固化後所形成之薄膜 案層之厚度不均勻。 ' 【發明内容】The 2-inkjet apparatus sprays the ink forming the film material into the plurality of housing spaces, and the ink is cured to form a predetermined film pattern layer on the substrate. Due to the simplified production, the material is economical, so the cost is greatly reduced: In the first month 'm technology', the plurality of partition walls are formed on the substrate by applying a photoresist film having a predetermined pattern on the photoresist material by performing a coating on the photoresist material, or performing a process of engraving, or adding a process to the substrate. . In order to shape the 'film pattern, the distribution of the number of accommodating spaces needs to be distributed with the film pattern == this 'to listen to the plural number of containment' of the green material is removed, and the functional area distribution of the exposed reticle also corresponds to the accommodating space The distribution of the plurality of functional areas corresponding to the plurality of accommodating spaces is a moment... Therefore, the partition wall defining each accommodating space is surrounded by a rectangle. v丄!^ by the exposure of the reticle after exposure When the material is subjected to a development step, y I is thin, and the photoresist portion of the pattern portion is used, the development step is performed on the chemical surface array, and the photoresist is exposed from the top to the bottom of the photoresist material after exposure. The long side (or short side) of the dividing wall of the rectangular wall is a trapezoid along the long side (or short side) of the vertical waist I. One of the trapezoids, the opposite angle of the earth is an acute angle, such as Figure 1. The rectangular partition 200837491 wall has a section along the bisector of one of the rectangles, which is approximately a rectangle with an internal angle θ2 close to 90 degrees, as shown in Figure 2, and θ2 is greater than θι. The angle is -^ value'_ angle 02 and θι are different, ink corresponds = high Different 'Thus' may cause the ink after curing of the layer thickness of the film formed of non-uniform pattern. "SUMMARY OF THE INVENTION
有鑒於此，有必要提供一種可提高薄膜圖案層厚度均 勻性之曝光光罩及一種薄膜圖案層之製造方法。 一種曝光光罩，包括複數光罩單元，其中，各光罩單 元包括-第一功能區域及一包圍該第一功能區域之第二： 能區域。該第二功能區域在與第一功能區域之交界處:有 至少一個向第一功能區域内部突出之突出區域，使該第二 功能區域之一部分三邊被第一功能區域包圍。 X 一 一種薄膜圖案層之製造方法，包括以下步驟：將一曝 光光罩設於-表面帶有絲材料層之基板與—曝光機光源 間，該曝光光罩包括複數光罩單元，各光罩單元包括一第 :功能區域及一包圍該第一功能區域之第二功能區域，該 第二功能區域在與第一功能區域的交界處具有至少一個^ 第-功能區域内部突出之突出區域，使該第二功能區域二 邓刀二邊被第一功能區域包圍；曝光該光阻材料層；利 用顯影方式形成設立於基板表面之複數分隔牆，該複數分 隔牆限定複數收容空間；填充墨水至該複數收容空間内^ 及固化墨水以於複數收容空間内形成複數薄膜層。 所述之曝光光罩，藉由該至少光罩單元第二功能區域 8 200837491 之一部分三邊被第一功能區域包圍，而使該第二功能區域 ^ 之該部分對應之光阻材料於顯影過程得以被保留。 ^ 所述之薄膜圖案層製造方法，由於與曝光光罩之第二 功能區域該部分對應之光阻材料於顯影後被保留下來，因 此，在顯影後會於限定收容空間之分隔牆之相應部分形成 斜坡，使固化後的薄膜層之厚度均勻性提高。 【實施方式】 下面將結合附圖對本發明實施例作進一步之詳細說 •明。 請一併參閱圖3及圖4，本發明第一實施例提供一種 曝光光罩100,該曝光光罩100包括複數光罩單元102,各 光罩單元102呈矩形狀，該各光罩單元102包括一第一功 能區域1022及一第二功能區域1024，其中該第一功能區 域1022被第二功能區域1024包圍。該第二功能區域1024 在與第一功能區域1022之交界處，具有八個向第一功能區 馨域1022内部突出之突出區域1026，使該第二功能區域1024 之一部分三邊被第一功能區域1022包圍。本實施例中，該 突出區域1026係位於第一功能區域1022之端角部104 内，如圖4所示。各突出區域1026之形狀為方形。 本實施中之曝光光罩100之設計係針對使用正型光阻 材料來形成分隔牆的情形。對於正型光阻材料，由於正型 光阻材料被曝光的部分於顯影過程被去除，因此，本實施 例之曝光光罩100之第一功能區域1022可透過用於曝光之 光線，而複數第二功能區域1024可遮擋用於曝光之光線。 9 200837491 請參閱圖5，本發明第二實施例提供一種曝光光罩 ’ 200。本實施中之曝光光罩200之設計係針對使用負型光阻 ^ 材料來形成分隔牆的情形。對於負型光阻材料，由於負型 光阻材料未被曝光的部分於顯影過程被去除，因此，本實 施例之曝光光罩200之各曝光單元202之第一功能區域 2022可遮擋用於曝光之光線，而第二功能區域2024可透 過用於曝光之光線且突出區域2026係位於第一功能區域 2022之端角部204内。 * 請一併參閱圖6及圖7,本發明第三實施例提供一種 曝光光罩300，該曝光光罩300係一灰階式之光罩設計， 包括複數光罩單元302,其中，本實施例提供之曝光光罩 300與第一實施例及第二實施例提供之曝光光罩1〇〇，200 不同之處在於，該光罩單元302之第二功能區域3024之突 出區域3026之寬度較第一實施例及第二實施例中之突出 區域1026及2026之寬度要小，惟突出區域3026之數量比 馨突出區域1026及2026之數量要多，且突出區域3026係位 於第一功能區域3022之端角部304内。 請參閱圖8，本發明第四實施例提供一種曝光光罩 400，各光罩單元402之第二功能區域4024之突出區域 4026之寬度與第三實施例之突出區域3026之寬度相近， 惟本實施例之第一功能區域4022之四個端角部404被部分 切除，突出區域4026沿切除之切線向第一功能區域4022 内部突出且位於端角部404内。 需要指出的是，上述實施例提供之曝光光罩第二功能 200837491 突出區域之形狀可為其他形狀’如三角形，半圓形， ，方:施例提供一種薄膜圖案層之製造方法， 孩方法包括以下步驟： (100a)將一曝光光罩設於一表面帶有 基板與一曝光機光源間； ^ ( 200a)曝光該光阻材料層； 3 (3(^湘㈣方式形成設表面之複數分 隔牆，該複數分隔牆限定複數收容空間·， ( 400a)填充墨水至該複數收容空間内；及 ( 500a)固化墨水以於複數收容空間内形成複數薄膜 廣0 步驟（100a)所採用之曝光光罩係選自本發明第二者 施，供之曝光光罩·，其中，該第—功能區域2〇22限^ 一薄膜圖案，及該光阻材料層為負型光阻材料層。該曝光 鲁機光源是一紫外光曝光機光源。本實施例中，^板:材料 選自玻璃。當然，基板之材料也可選自石英玻璃、矽晶圓、 金屬板或塑料板等。 由於在步驟（100a)中，使用了負型光阻材料，故在 步驟（ 300a)中，光阻材料層中未被曝光之部分被去除而 形成複數收容空間，該複數收容空間之分佈與第一功能區 域2022提供.之薄膜圖案相對應。請一併參閱圖5及圖9二 由於各光罩單元202之第二功能區域2024具有突出區域 2026，根據第二實施例提供之曝光光罩2〇0，該第二功处 11 200837491 區域2024可透過用於曝光之光線，因此，第二功能區域 供 2024對應之光阻材料被曝光，顯影過程中沒有被去除。當 • 光阻材料於被曝光後，會形成與各光罩單元202之第一功 能區域2022及第二功能區域2024——對應之一未曝光部 6022及一曝光部6024。該曝光部6024於顯影過程係被保 留的，且該曝光部6024具有向未曝光部6022内部突出之 突出區域6026，該曝光部6024之突出區域6026與第二功 能區域2024之突出區域2026——對應。 ® 當將被曝光後之光阻材料層放置顯影液中時，由於曝 光部6024之突出區域6026之存在，顯影液不易進入位於 曝光部6024之兩個突出區域6026之間之未曝光部6022 之部分。當除位於兩個突出區域6026之間之未曝光部6022 之部分之其它光阻材料已完成顯影過程而形成收容空間 時，由於曝光部6024之突出區域6026之存在之原因，該 位於曝光部6024之兩個突出區域6026之間之未曝光部 0 6022之部分會形成自該收容空間内到外之方向傾斜之一 斜坡，該斜坡之傾斜角度為一銳角Θ ’（斜坡面與基板表面 之夾角），如圖11所示。而圍成該收容空間之分隔牆之長 邊（或短邊）沿垂直於該矩形之長邊（或短邊）之截面為 一梯形，如圖10所示，該梯形之一腰與基板之夾角為一個 銳角Θ”，且Θ，’約等於θ’。 在步驟（400a )中，填充步驟係利用一喷墨裝置（圖 未示）將墨水填充至複數收容空間内而於收容空間内形成 墨水層。該喷墨裝置係熱泡式喷墨裝置或壓電式喷墨裝 12 200837491 置。該喷墨裝置包括複數喷墨孔，噴墨裝置之複數噴墨孔 與該基板作行列相對的運動，然後能夠一次喷墨形成薄膜 圖案層。In view of the above, it is necessary to provide an exposure mask which can improve the thickness uniformity of a film pattern layer and a method of manufacturing a film pattern layer. An exposure reticle includes a plurality of reticle units, wherein each reticle unit includes a first functional area and a second: energy area surrounding the first functional area. The second functional area is at a boundary with the first functional area: there is at least one protruding area that protrudes inside the first functional area such that one of the three sides of the second functional area is surrounded by the first functional area. X A method for manufacturing a thin film pattern layer, comprising the steps of: providing an exposure mask between a substrate having a layer of silk material and a light source of the exposure machine, the exposure mask comprising a plurality of mask units, each light The cover unit includes a first functional area and a second functional area surrounding the first functional area, and the second functional area has at least one protruding area protruding inside the functional area at a boundary with the first functional area. The second functional region is surrounded by the first functional region; the photoresist layer is exposed; and a plurality of partition walls are formed on the surface of the substrate by using a developing method, the plurality of partition walls defining a plurality of receiving spaces; filling the ink to The plurality of accommodating spaces and the solidified ink form a plurality of film layers in the plurality of accommodating spaces. The exposure reticle is surrounded by the first functional region by a portion of the three sides of the second functional region 8 200837491 of the reticle unit, so that the portion of the second functional region corresponds to the photoresist during the development process. Can be retained. The method for manufacturing a thin film pattern layer, wherein the photoresist material corresponding to the portion of the second functional region of the exposure mask is retained after development, and therefore, after development, the corresponding portion of the partition wall defining the receiving space A slope is formed to increase the uniformity of the thickness of the cured film layer. [Embodiment] Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 3 and FIG. 4 together, the first embodiment of the present invention provides an exposure mask 100. The exposure mask 100 includes a plurality of mask units 102. Each of the mask units 102 has a rectangular shape. A first functional area 1022 and a second functional area 1024 are included, wherein the first functional area 1022 is surrounded by the second functional area 1024. The second functional area 1024 has eight protruding areas 1026 protruding inside the first functional area 1022 at the interface with the first functional area 1022, so that a part of the three sides of the second functional area 1024 are firstly functioned. Area 1022 is surrounded. In this embodiment, the protruding region 1026 is located in the end corner portion 104 of the first functional region 1022, as shown in FIG. Each of the protruding regions 1026 has a square shape. The design of the exposure mask 100 in this embodiment is directed to the case where a spacer is formed using a positive photoresist material. For the positive-type photoresist material, since the exposed portion of the positive-type photoresist material is removed during the development process, the first functional region 1022 of the exposure mask 100 of the present embodiment can transmit light for exposure, and the plurality of The second functional area 1024 blocks the light for exposure. 9 200837491 Referring to Figure 5, a second embodiment of the present invention provides an exposure reticle '200. The design of the exposure mask 200 in this embodiment is directed to the case where a partition wall is formed using a negative photoresist material. For the negative photoresist material, since the unexposed portion of the negative photoresist material is removed during the development process, the first functional region 2022 of each exposure unit 202 of the exposure mask 200 of the present embodiment can be blocked for exposure. The light, while the second functional area 2024 is permeable to light for exposure and the protruding area 2026 is located within the end corner 204 of the first functional area 2022. Please refer to FIG. 6 and FIG. 7 together. The third embodiment of the present invention provides an exposure mask 300, which is a gray scale reticle design, including a plurality of reticle units 302, wherein the implementation The exposure mask 300 provided by the example is different from the exposure masks 100, 200 provided in the first embodiment and the second embodiment in that the width of the protruding region 3026 of the second functional region 3024 of the mask unit 302 is different. The widths of the protruding regions 1026 and 2026 in the first embodiment and the second embodiment are small, but the number of protruding regions 3026 is larger than the number of the protruding regions 1026 and 2026, and the protruding region 3026 is located in the first functional region 3022. In the end corner portion 304. Referring to FIG. 8, a fourth embodiment of the present invention provides an exposure mask 400. The width of the protruding region 4026 of the second functional region 4024 of each mask unit 402 is similar to the width of the protruding region 3026 of the third embodiment. The four end corners 404 of the first functional region 4022 of the embodiment are partially cut away, and the protruding regions 4026 project toward the interior of the first functional region 4022 along the tangent to the cut and are located within the end corner portion 404. It should be noted that the second function of the exposure mask provided by the above embodiment 200837491 may have other shapes such as a triangular shape, a semicircular shape, and a method for manufacturing a thin film pattern layer. The following steps: (100a) placing an exposure mask on a surface with a substrate and an exposure machine light source; ^ (200a) exposing the photoresist material layer; 3 (3 (^) (4) forming a plurality of separation surfaces a wall, the plurality of partition walls defining a plurality of receiving spaces, (400a) filling ink into the plurality of receiving spaces; and (500a) curing ink to form a plurality of films in the plurality of receiving spaces, the exposure light used in the step (100a) The cover is selected from the second embodiment of the present invention for the exposure mask, wherein the first functional region 2〇22 is limited to a thin film pattern, and the photoresist material layer is a negative photoresist material layer. The Lu light source is a UV light source. In this embodiment, the material is selected from glass. Of course, the material of the substrate may also be selected from quartz glass, germanium wafer, metal plate or plastic plate, etc. (100a) The negative photoresist material is used, so in the step (300a), the unexposed portion of the photoresist layer is removed to form a plurality of receiving spaces, and the distribution of the plurality of receiving spaces is provided by the first functional region 2022. The film pattern corresponds to the same. Please refer to FIG. 5 and FIG. 9 together. Since the second functional area 2024 of each reticle unit 202 has a protruding area 2026, the exposure mask 2 〇 0 according to the second embodiment, the second Work area 11 200837491 Area 2024 can transmit light for exposure. Therefore, the second functional area is exposed to the photoresist material corresponding to 2024, and is not removed during development. When the photoresist material is exposed, it will form and The first functional area 2022 and the second functional area 2024 of each reticle unit 202 correspond to one unexposed portion 6022 and an exposed portion 6024. The exposed portion 6024 is retained during the development process, and the exposed portion 6024 has The protruding area 6026 protruding toward the inside of the unexposed portion 6022, the protruding portion 6026 of the exposed portion 6024 corresponds to the protruding portion 2026 of the second functional region 2024. ® When the photoresist material to be exposed is exposed When the developer is placed, the developer does not easily enter the portion of the unexposed portion 6022 located between the two protruding regions 6026 of the exposed portion 6024 due to the presence of the protruding portion 6026 of the exposed portion 6024. When located in the two protruding regions 6026 When the other photoresist material of the portion of the unexposed portion 6022 has completed the development process to form the receiving space, the protruding portion 6026 of the exposed portion 6024 is located between the two protruding regions 6026 of the exposed portion 6024. A portion of the unexposed portion 0 6022 may form a slope inclined from the inside to the outside of the receiving space, the slope of the slope being an acute angle ( ' (the angle between the slope surface and the surface of the substrate), as shown in FIG. The long side (or short side) of the partition wall surrounding the accommodating space has a trapezoidal cross section perpendicular to the long side (or short side) of the rectangular shape, as shown in FIG. 10, the trapezoid one waist and the substrate The angle is an acute angle Θ", and Θ, 'about equal to θ'. In the step (400a), the filling step is performed by filling an ink into the plurality of receiving spaces by an ink jet device (not shown) to form in the accommodating space. The ink jet device is a thermal bubble type ink jet device or a piezoelectric ink jet device 12 200837491. The ink jet device includes a plurality of ink jet holes, and the plurality of ink jet holes of the ink jet device are opposite to the substrate. After the movement, the film pattern layer can then be formed by one ink jet.
在步驟（ 500a)中，收容空間内之墨水層被一固化裝 置（圖未不）所固化，以形成位於透明基板上之複數薄膜 層。該固化裝置一加熱裝置及/或一抽真空裝置、或一曝光 f置固化墨水，該曝光裝置係一紫外線曝光裝置。由於之 前I艮定每個收容空間之分隔牆之兩個突出區域6〇26之間 之部分形成一斜坡，該斜坡之傾斜角度θ，約等於㊀，，，故接 觸於兩個突出區域嶋之間之部分之墨水雜與接觸於 分，牆之長邊與短邊之墨水形狀大致相同，固化後所形成 之薄膜厚度均勻性提高。 &本實施例所提供之曝光光罩，藉由各光罩單元之第二 功=區域之一部分三邊被第一功能區域包圍，而使該第二 f能區域之該部分對應之光阻材料於顯影職得以被保 =豈本實施例所提供之薄膜圖案層製造方法，由於與曝光 留下二功能區域該部分對應之光阻材料於顯影後被保 :=，因此’在顯影後會於限定收容空間之分隔牆之相 應#刀形成斜坡，使固化後的薄膜 發光;=，用於彩咖二機 13 200837491 完成有機發光裝置之導線層，發光層及電子電洞傳輸層等 之製造。惟所形成之薄膜圖案及所需之墨水會有所不同。 綜上所述，本發明確已符合發明專利之要件，麦依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，本發明之範圍並不以上述實施方式為限，舉凡熟習本 案技藝之人士援依本發明之精神所作之等效修飾或變化， 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1爲先前技術中分隔牆與基板形成一夾角之一 示意圖。 圖2爲先前技術中分隔牆與基板形成一夾角之 面示意圖。 力一哉 圖3爲本發明第一實施例提供之一種曝光光 面示意圖。 卞 圖4爲圖3虛線中所示部分之放大示意圖。 固5本發明第二實施例提供之一種曝一 示意圖。 皁之千面 _立圖6為本發明第三實施例提供之—種曝光光罩之平面 不思圖。 圖7為圖6虛線中所示部分之放大示意圖。 时一圖8為本發明第四實施例提供之一種曝光光罩之光罩 早70之平面示意圖。 圖。圖9為被曝光後之光阻材料之曝光區域之分佈示意 200837491 圖ίο爲本發明中分隔牆與基板形成一夾角之一截面 示意圖。 圖11爲本發明中分隔牆與基板形成一夾角之另一截 面不意圖。 【主要元件符號說明】 曝光光罩 100，200，300，400 光罩單元 第一功能區域 第二功能區域 突出區域 端角部 未曝光部 102 ， 202 ， 302 ， 402 1022 ， 2022 ， 3022 ， 4022 1024 ， 2024 ， 3024 ， 4024 1026 ， 2026 ， 3026 ， 6026 ， 4026 104 ， 204 ， 304 ， 404 6022 曝光部 6024In step (500a), the ink layer in the containment space is cured by a curing device (not shown) to form a plurality of film layers on the transparent substrate. The curing device is a heating device and/or a vacuuming device, or an exposure f setting ink, and the exposure device is an ultraviolet exposure device. Since the portion between the two protruding regions 6〇26 of the partition wall of each of the accommodating spaces is formed as a slope, the inclination angle θ of the slope is approximately equal to one, and thus contacts the two protruding regions. The portion of the ink is in contact with the minute, and the shape of the ink on the long side and the short side of the wall is substantially the same, and the uniformity of the thickness of the film formed after curing is improved. & The exposure reticle provided in this embodiment, wherein one of the three sides of the second work=region of each reticle unit is surrounded by the first functional region, and the portion of the second f-energy region corresponds to the photoresist The material can be protected in the developing position. The method for manufacturing the thin film pattern layer provided by the embodiment is that the photoresist material corresponding to the portion which is left in the two functional regions after exposure is insured after development: =, therefore, The corresponding knife of the partition wall defining the accommodating space forms a slope to make the cured film emit light; =, for the color coffee machine 13 200837491 Completes the manufacture of the wiring layer of the organic light-emitting device, the light-emitting layer and the electron hole transport layer, etc. . However, the film pattern formed and the ink required will vary. In summary, the present invention has indeed met the requirements of the invention patent, and Mai filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and those skilled in the art will be able to make equivalent modifications or variations in accordance with the spirit of the present invention. It should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a state in which a partition wall forms an angle with a substrate in the prior art. Fig. 2 is a schematic view showing the angle between the partition wall and the substrate in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 3 is a schematic view showing an exposure light according to a first embodiment of the present invention.卞 Figure 4 is an enlarged schematic view of the portion shown in the dashed line of Figure 3. Solid 5 is a schematic view of an exposure provided by a second embodiment of the present invention. The surface of the soap is shown in Fig. 6 as a plane of the exposure mask according to the third embodiment of the present invention. Figure 7 is an enlarged schematic view of a portion shown in the broken line of Figure 6. FIG. 8 is a plan view showing a mask 70 of an exposure mask according to a fourth embodiment of the present invention. Figure. Fig. 9 is a schematic view showing the distribution of the exposed regions of the photoresist material after exposure. 200837491 Fig. 1 is a schematic cross-sectional view showing the angle between the partition wall and the substrate in the present invention. Figure 11 is another cross-sectional view of the partition wall forming an angle with the substrate in the present invention. [Description of main component symbols] Exposure reticle 100, 200, 300, 400 Photomask unit First functional area Second functional area Projection area End corner unexposed part 102, 202, 302, 402 1022, 2022, 3022, 4022 1024 , 2024 , 3024 , 4024 1026 , 2026 , 3026 , 6026 , 4026 104 , 204 , 304 , 404 6022 exposure unit 6024
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