TW200836090A - Photo-sensitive element and liquid crystal display with the same - Google Patents

Photo-sensitive element and liquid crystal display with the same Download PDF

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TW200836090A
TW200836090A TW96106504A TW96106504A TW200836090A TW 200836090 A TW200836090 A TW 200836090A TW 96106504 A TW96106504 A TW 96106504A TW 96106504 A TW96106504 A TW 96106504A TW 200836090 A TW200836090 A TW 200836090A
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electrode
film transistor
electrically connected
photosensitive
line
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TW96106504A
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Chinese (zh)
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TWI349869B (en
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Po-Yang Chen
Po-Sheng Shih
Tsu-Chiang Chang
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Hannstar Display Corp
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Abstract

The photo-sensitive element includes a switch TFT and a photo detecting device. The gate electrode of the switch TFT is electrically connected to a switch line and the source electrode of the switch TFT is electrically connected to a readout line. The photo detecting device is connected between the switch line and the drain electrode of the switch TFT for detecting the brightness of a light incident thereon.

Description

200836090 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種光敏元件,特別是有關於一種具 有偵測功能之光敏元件以及液晶顯示器。 【先前技術】 觸控板一般具有透明之表面,並被安裝於一顯示裝置 之上,例如一筆記型電腦或一個人數位助理(pers〇nal digital assistant ; PDA)之液晶顯示器上,以提供使用者一 輸入介面或輸入裝置’進行輸入的工作,而無須額外的鍵 盤或滑鼠等裝置。觸控板亦常被使用於繪圖的工作,例如 是電腦辅助設計製圖等。觸控板亦常常以觸控薄膜(t〇uch film)、觸控螢幕(touch screen)、數位板(digitizer)、平板電 腦(tablet pc)或電子圖形輸入面板(electric graphic丨叩加 panel ; EGIP)的形式出現。 根據感應方法的不同,觸控板通常被分為電阻式、電 容式或電磁式等等。電阻式的觸控板係利用電流變化來偵 測被觸壓的位置。而電容式的觸控面板則係利用電容變化 來偵測被觸壓的位置。電磁式的觸控板,則係施加一電磁 場及被觸壓位置的共振頻率的變化來偵測被觸壓的位置。 不同形式的觸控板具有不同形式的訊號放大、解析度 以及訊號處理的技術。因此,根據不同的需求,使用者可 根據經濟上的效益、產品壽命、光電性質、電器特性、機 械性質、環境測試以及輸入特性等等因素,來選擇所需之 顯示裝置以及合適的觸控板。 200836090 然而,觸控板具有一透明之表面被安裝於使用者與顯 示器(例如是液晶顯示器)可視區的表面之間,具有許多的缺 點。例如,由於觸控板的透明表面結合液晶面板本身的許 多光學薄膜,其將造成光線形成多次的反射,因而降低顯 不器的對比,並產生炫光(glare)的現像。此外,在顯示器上 外加觸控板亦增加顯示器的生產成本,並增加組裝的複雜 度和厚度。因此,部份的液晶顯示器結合光敏元件於其薄 膜電晶體陣列基板,以取代另外安裝於顯示器表面之透明 觸控板,其可以簡化具有觸控功能之液晶顯示器的組裝程 序。 參閱第1A圖,係一電流式光敏元件! 〇〇具有一光敏薄 膜電晶體(photo thin film transistor ; photo TFT) 11 〇 以及 一開關薄膜電晶體(switch thin film transistor ; switch TFT) 130。開關薄膜電晶體i3〇之源極電極136電性連接一讀 取線路(readout line)140,且其閘極電極132則電性連接一 開關線路(switchlme)150。而其汲極電極134則電性連接 光破薄膜電晶體110之源極電極丨丨6。此外,閘極電極1工2 以及汲極電極114兩者均電性連接至一偏壓線路㈨⑽ voltage line) 120。偏壓線路12〇提供一電壓至光敏薄膜電 晶體110。因此,當開關薄膜電晶體130被開啟後,通過 光敏薄膜電晶體11〇之光電流將因為光敏薄膜電晶體11〇 表面上的亮度而被影響。一般而言,此光電流將與光敏薄 膜電晶體110所偵測到的亮度成正相關。然而,過多的金 屬線路被配置於薄膜電晶體陣列之基板上,例如是讀取線 路140、開關線路15〇以及偏壓線路12〇其將明顯影響到液 200836090 日日〆員示為的開口率(aperture ratio)。 由於’電流式的光敏元件1 〇〇需連接三條金屬線路, 例如是開關線路150、偏壓線路120以及讀取線路14〇,以 驅動光敏元件.100量測其上之光線的亮度。因此,電流式 的光敏70件一般被稱之為三端點之光敏元件。參閱第1B — 圖,係繪示一電荷式的光敏元件800。電荷式光敏元件8〇〇 • 包含一光敏薄膜電晶體(Photo TFT) 850、一開關薄膜電晶 體(switch TFT) 840以及一電容860。開關薄膜電晶體840 () 之源極電極電性連接讀取線路810,並利用其閘極電極電 性連接開關線路82〇。而其汲極電極則電性連接光敏薄膜 電晶體850之源極電極。此外,光敏薄膜電晶體85〇之 閘極電極與汲極電極均電性連接偏壓線路83〇。值得注意 地是,此_電荷<光敏元件亦被稱為三端的光敏元 件。其與電流式光敏元件1〇〇並不完全相同,電荷式光敏 το件800 —般具有一額外的元件,電容86〇。 相同地,電荷式的光敏元件_ &必須連接至少三條 U 金屬線路,例如是開關線路82〇、偏壓線路830與讀取線路 810,以驅動光敏元件800量測其上之光線的亮度。 —□此、、口 口光敏TL件在薄膜電晶體陣列基板的液晶顯 示器會因為過多的金屬線路(或導線)配置於其上,使得其開 口率因而降4氐如何提回液晶觸控面板的敏感度並提高顯 示的表現,為開發業者所努力之目標。 【發明内容】 根據前述目的,本發明俏捭 係^供一種光敏元件包含有一 7 200836090 弟-導電線路、一第二導電線路、一開關薄膜電晶體以及 二=元件。此開關薄膜電晶體具有一第一閘極電極, $端电極w及一第二端電極。第_閘極電極電性連接 至第導電線路,以及第_端電極電性連接至第二導電線 ,而,偵測TL件電性連接於第一導電線路與開關薄膜電 晶體之第二端電極之間’以㈣照射於其上之光線。200836090 IX. Description of the Invention: [Technical Field] The present invention relates to a photosensitive member, and more particularly to a photosensitive member having a detecting function and a liquid crystal display. [Prior Art] The touchpad generally has a transparent surface and is mounted on a display device, such as a notebook computer or a liquid crystal display of a number of assistants (PDAs) to provide a user. An input interface or input device 'does input work without the need for an additional keyboard or mouse. Touchpads are also often used for drawing work, such as computer-aided design drawings. The touchpad is also often used as a touch film (t〇uch film), a touch screen, a digitizer, a tablet pc or an electronic graphic input panel (electric graphic 丨叩 plus panel; EGIP) The form appears. Depending on the sensing method, the touchpad is usually classified into a resistive, capacitive or electromagnetic type. Resistive touch panels use current changes to detect where they are being touched. Capacitive touch panels use capacitance changes to detect where they are being touched. The electromagnetic touch panel applies a change in the electromagnetic field and the resonant frequency of the touched position to detect the position of the touched pressure. Different forms of touchpads have different forms of signal amplification, resolution, and signal processing techniques. Therefore, according to different needs, users can select the desired display device and the appropriate touchpad according to economic benefits, product life, photoelectric properties, electrical properties, mechanical properties, environmental testing and input characteristics. . 200836090 However, the touchpad has a transparent surface that is mounted between the user and the surface of the viewable area of the display (e.g., liquid crystal display) with a number of disadvantages. For example, since the transparent surface of the touch panel incorporates many optical films of the liquid crystal panel itself, it will cause multiple reflections of light, thereby reducing the contrast of the display and producing a glare. In addition, the addition of a touchpad to the display also increases the cost of production of the display and increases the complexity and thickness of the assembly. Therefore, a part of the liquid crystal display is combined with the photosensitive member on the thin film transistor array substrate to replace the transparent touch panel additionally mounted on the display surface, which simplifies the assembly process of the liquid crystal display having the touch function. See Figure 1A for a current-sensitive photosensor! The crucible has a photo thin film transistor (photo TFT) 11 〇 and a switch thin film transistor (switch TFT) 130. The source electrode 136 of the switching thin film transistor i3 is electrically connected to a readout line 140, and the gate electrode 132 is electrically connected to a switch line 150. The drain electrode 134 is electrically connected to the source electrode 丨丨6 of the thin film transistor 110. In addition, both the gate electrode 1 and the drain electrode 114 are electrically connected to a bias line (10) voltage line 120. The bias line 12A provides a voltage to the photosensitive thin film transistor 110. Therefore, when the switching film transistor 130 is turned on, the photocurrent passing through the photosensitive film transistor 11 will be affected by the brightness on the surface of the photosensitive film transistor 11 . In general, this photocurrent will be positively correlated with the brightness detected by the photosensitive film 110. However, too many metal lines are disposed on the substrate of the thin film transistor array, such as the read line 140, the switch line 15A, and the bias line 12, which will significantly affect the aperture ratio indicated by the liquid 200836090. (aperture ratio). Since the galvanic photosensitive element 1 is not required to be connected to three metal lines, such as the switch line 150, the bias line 120, and the read line 14A, the photosensitive element 100 is driven to measure the brightness of the light thereon. Therefore, the current-type photosensitive 70 member is generally referred to as a three-terminal photosensitive member. Referring to Fig. 1B, there is shown a charge photosensor 800. The charge photosensor 8 〇〇 includes a photo film transistor (Photo TFT) 850, a switch film transistor 840, and a capacitor 860. The source electrode of the switching thin film transistor 840 () is electrically connected to the read line 810, and is electrically connected to the switch line 82 by its gate electrode. The drain electrode is electrically connected to the source electrode of the photosensitive film transistor 850. In addition, the gate electrode and the drain electrode of the photosensitive film transistor 85 are electrically connected to the bias line 83A. It is worth noting that this _charge & photosensitive element is also referred to as a three-terminal photosensitive element. It is not exactly the same as the current-type photosensitive element 1 , and the charge-sensitive photosensitive member 800 generally has an additional element, a capacitance of 86 〇. Similarly, the charge-type photosensitive element _ & must be connected to at least three U metal lines, such as switch line 82 〇, bias line 830 and read line 810, to drive photosensitive element 800 to measure the brightness of the light thereon. —□———————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————— Sensitivity and improved display performance are the goals of the development industry. SUMMARY OF THE INVENTION In accordance with the foregoing objects, the present invention provides a light-sensitive element comprising a 7200836090-electrical conductive line, a second conductive line, a switching thin film transistor, and a second element. The switching thin film transistor has a first gate electrode, a $terminal electrode w and a second terminal electrode. The first _ gate electrode is electrically connected to the first conductive line, and the _th terminal electrode is electrically connected to the second conductive line, and the detecting TL is electrically connected to the second conductive end and the second end of the switching film transistor Light between the electrodes that is irradiated with (4).

Ο 本1明之另一悲樣係提供一種液晶顯示器之讀取畫 素。此讀取晝素包含有一晝素薄膜電晶體以及一光敏元 件^素薄膜電晶體之閘極電極電性連接至配置於此液晶 ,、、、員不之基板上的_第_閘極線,而光敏元件則更包含有 開關相電晶體以及—耗測元件,其中此開關薄膜電 晶體之閘極電極電性連接至基板上的_第二閘極線,而開 關薄膜電晶體之源極電極電性連接—讀取線路。光制元 件則被連接於第二閘極線路與開關薄膜電晶體之沒極電極 之間’以偵測照射於其上之光線亮度。 一。本發明之又一態樣係提供一種液晶顯示器。此液晶顯 不器包含有一衫色濾光片基板、一薄膜電晶體陣列基板以 及液晶層夾設於彩色濾光片基板以及薄膜電晶體陣列基 板之間。此外,複數個閘極線路、資料線路、讀取線路以 及碩取旦素形成於此薄膜電晶體陣列基板之上。每一讀取 晝素更包含有上述之晝素薄膜電晶體以及上述之光敏元 件且其中之開關薄膜電晶體、畫素薄膜電晶體以及光敏 凡件,較佳地可由非晶矽薄膜電晶體所構成。 【實施方式】 以下將以圖示及詳細說明清楚說明本發明之實施例, 8 200836090 如熟悉此技術《人員在瞭解本發明之較佳實施例後,春可 由本發明所教示之技術,加以改變及修飾,然其並^ 本發明之精神與範圍。 參閱第2 ®,其係誇示本發明之光敏元件之第—較佳 實施例之示意圖。光敏元件細包含有—開_膜電^ (switch TFT) 210以及一光敏薄膜電晶體(ph〇t〇 TFTm Ο c 每一上述之薄膜電晶體包含有1極電極以及二個端電極 (terminal electr〇de,亦稱之為源/汲極電極),且上述之薄膜 電晶體被搞合於二導電線路間,例如是開關線路(sw滅 230以及讀取線路(read〇ut lme) 24〇。開關薄膜電晶體 210的閘極電極212連接開關線路23〇,而光敏薄膜電晶 體220的閘極電極222與沒極電極224亦連接於此開關 線路230。開關薄膜電晶體21〇的汲極電極214連接光敏 薄膜電晶體220之源極電極226。此外,開關薄膜電晶體 210的源極龟極216則連接讀取線路240。 比較光敏元件200與第1A圖中之習知之光敏元件 100,光敏元件200可將偏壓線路結合於開關線路23〇之 中,而無須額外連接偏壓線路。所以在薄膜電晶體陣列基 板中的金屬線路的數量可有效地被降低。光敏元件2〇〇亦 僅需被連接於開關線路23〇與讀取線路24〇間。是故在本 毛明之一實施例中液晶顯示器之薄膜電晶體陣列基板無須 獨立之偏壓線路,其光敏元件2〇〇僅需被連接於二金屬線 路。 表一 ··光電流量測值 9 200836090另一 Another sadness of this 1 is to provide a reading of a liquid crystal display. The read halogen includes a halogen film transistor and a gate electrode of a photosensitive element transistor electrically connected to the _th gate line disposed on the substrate of the liquid crystal, and the substrate. The photosensitive element further comprises a switching phase transistor and a measuring component, wherein the gate electrode of the switching thin film transistor is electrically connected to the second gate line on the substrate, and the source electrode of the switching thin film transistor Electrical connection - read the line. The optical component is coupled between the second gate line and the gate electrode of the switching thin film transistor to detect the brightness of the light that is incident thereon. One. Yet another aspect of the present invention provides a liquid crystal display. The liquid crystal display device comprises a shirt color filter substrate, a thin film transistor array substrate, and a liquid crystal layer interposed between the color filter substrate and the thin film transistor array substrate. In addition, a plurality of gate lines, data lines, read lines, and singular elements are formed on the thin film transistor array substrate. Each of the read halogens further comprises the above-described halogen film transistor and the above-mentioned photosensitive element, wherein the switch film transistor, the pixel film transistor and the photosensitive member are preferably made of an amorphous germanium film transistor. Composition. [Embodiment] The embodiments of the present invention will be clearly described by the following description and detailed description. 8 200836090 As will be appreciated by those skilled in the art after the preferred embodiments of the present invention, the spring may be modified by the teachings of the present invention. And the modifications, and the spirit and scope of the invention. Referring to Figure 2, a schematic representation of a preferred embodiment of the photosensitive member of the present invention is shown. The photosensitive element comprises a switch TFT 210 and a photosensitive thin film transistor. Each of the thin film transistors includes a 1-pole electrode and two terminal electrodes. 〇de, also known as source/drain electrode, and the above-mentioned thin film transistor is integrated between two conductive lines, such as a switch line (sw extinguish 230 and read line). The gate electrode 212 of the switching thin film transistor 210 is connected to the switching circuit 23A, and the gate electrode 222 and the electrodeless electrode 224 of the photosensitive film transistor 220 are also connected to the switching circuit 230. The gate electrode of the switching film transistor 21〇 214 is connected to the source electrode 226 of the photosensitive film transistor 220. Further, the source turtle 216 of the switching film transistor 210 is connected to the reading line 240. Comparing the photosensitive member 200 with the conventional photosensitive member 100 of Fig. 1A, photosensitive The component 200 can bond the bias line to the switch line 23〇 without additionally connecting the bias line. Therefore, the number of metal lines in the thin film transistor array substrate can be effectively reduced. It is required to be connected between the switch line 23A and the read line 24A. Therefore, in one embodiment of the present invention, the thin film transistor array substrate of the liquid crystal display does not need a separate bias line, and the photosensitive element 2〇〇 only needs to be Connected to the two metal lines. Table 1··Photoelectric flow measurement 9 200836090

其中Vd係為光敏薄膜電晶沒極電極的量測電座,而VG係為光 敏薄膜電B曰體閘極電極的量測電壓,在bri咖情況下環境亮度約川0 cd/m2,在dark情況下則係脾甘φ 士人 田人 ^ 、將,、置於一黑I子中,以排除其他外部光 源進行量測。 此外,表一係光敏元件200上所量測之光電流的量測 值。其中光電流的量測值於bright的情況下,係以一環境 免度約為2150 Cd/m2的情況下進行,而㈣的情況,則 係將其放置於-黑色的盒子之中,以隔離其他的光源的情 況下進行。參閱表一,當v盘v描Λ 丸 0興VD增加的情況下,光電流Among them, Vd is the measuring electrode of the photosensitive thin film electro-electrode electrode, and VG is the measuring voltage of the photosensitive film B-gate gate electrode. In the case of bri coffee, the ambient brightness is about 0 cd/m2. In the case of dark, the spleen ̄ 士 士人田人 ^, 将,, placed in a black I, to exclude other external light sources for measurement. Further, Table 1 is a measure of the photocurrent measured on the photosensitive member 200. The photocurrent measurement value is in the case of bright, with an environmental exemption of about 2150 Cd/m2, and in the case of (iv), it is placed in a black box to isolate In the case of other light sources. Referring to Table 1, when the v disk v tracing pill 0 XD VD increased, the photocurrent

(J 的差值亦同時增加。由於光敏薄膜電晶體220之閘極電極 222與沒極電極224同時被連接於開關線路謂,因此, 相較於習知的光敏元件i 〇〇的低 _ 的偏壓,本發明之開關線路 230可提供較高之電壓給光 双浔腰窀晶體22〇 。所以, bright與dark情況下之光電流的罢祐 ,爪的差值亦較習知的光敏元件 i〇〇的差值為大。 參閱第3圖,係繪示第2圖巾 口甲之弟一較佳實施例之不 同壤+兄下的電流量測曲線。其中垂直 ,,.,, T玉罝轴表不光電流的量測 值早位為安培(Ampere ; Α),水平軸則表 ^衣不開關溥膜電晶體 10 200836090 之源極電極與汲極電極的電壓差。曲線310係開關薄膜電 晶體於dark的情況下所量測之汲極電流曲線。曲線32〇則 係光敏薄膜電晶體於dark情況下之負載曲線。此外,曲線 330則係光敏薄膜電晶體於bright情況下之負載曲線。第3 圖中的量測數據進一步的整理並揭露於表二之中。表二係 本發明之光敏元件200之光敏薄膜電晶體以及光敏薄膜電 晶體+開關薄膜電晶體之電流量測值。(The difference of J is also increased at the same time. Since the gate electrode 222 of the photosensitive thin film transistor 220 and the gate electrode 224 are simultaneously connected to the switching line, it is lower than the conventional photosensitive element i 的Bias, the switch circuit 230 of the present invention can provide a higher voltage to the optical double-twisted 浔 窀 crystal 22 〇. Therefore, the light current in the case of bright and dark, the difference between the claws is also better than the conventional photosensitive element The difference between i and 〇〇 is large. Referring to Fig. 3, the current measurement curve of the different soils and brothers in a preferred embodiment of Figure 2 is shown. Vertical,,,,, T The measurement value of the non-photocurrent of the jade axis is early in Ampere (Ampere; Α), and the horizontal axis is the voltage difference between the source electrode and the drain electrode of the coating transistor 10 200836090. Curve 310 is a switch The buckling current curve measured by the thin film transistor in the case of dark. The curve 32〇 is the load curve of the photosensitive film transistor in the dark case. In addition, the curve 330 is the load of the photosensitive film transistor in the case of the bright case. Curve. The measurement data in Figure 3 is further organized. Disclosure. Table II based photosensitive member of the present invention the photosensitive film transistor 200. Thin film transistor and a photosensitive + current measuring value of the switching thin film transistor on in Table II.

表二:光敏薄膜電晶體及光敏薄膜電晶體 W/L=48/5 Photo TFT Photo TFT + Switch TFT Dark 2.17E-06 8.28E-07 Bright 2.93E-06 9.85E-07 Ibright-Idark '~·_ _ ·Ί· 1 7.64E-07 1.57E-07 單位:安培(A) 其中V D係為光敏薄膜電晶沒極電極的量測電壓,而v G係 為光敏薄膜電晶體閘極電極的量測電壓,在bright情況下環境 冗度約21 50 cd/m2 ’在dark情況下則係將其置於一專盒子中, 以排除其他外部光源進行量測。 此外’表三則係習知之光敏元件1 〇〇的TFT光敏薄 膜電晶體以及光敏薄膜電晶體+開關薄膜電晶體的電流量 測值。 200836090 表二·習知之光敏薄膜電晶體及光敏薄膜電晶體+ 1關薄膜電晶體的電流量測值Table 2: Photosensitive Film Transistor and Photosensitive Film Transistor W/L=48/5 Photo TFT Photo TFT + Switch TFT Dark 2.17E-06 8.28E-07 Bright 2.93E-06 9.85E-07 Ibright-Idark '~· _ _ ·Ί· 1 7.64E-07 1.57E-07 Unit: Ampere (A) where VD is the measuring voltage of the photosensitive thin film electromorphic electrode, and v G is the amount of photosensitive thin film transistor gate electrode The voltage is measured. In the case of bright, the environmental redundancy is about 21 50 cd/m2. In the case of dark, it is placed in a special box to exclude other external light sources for measurement. Further, Table 3 shows the current measurements of the TFT photosensitive film transistor of the conventional photosensitive member 1 and the photosensitive film transistor + switching film transistor. 200836090 Table 2 · Current measurement of photosensitive thin film transistor and photosensitive thin film transistor + 1 off film transistor

Η " _ 1 _ 二丨· Γ' - ___ P—, Photo TFT -----: Photo TFT + Switch TFT Dark 1.12E-09 1.10E-09 Bright 2.56E-08 2.41E-08 Ibright-Idark ^ _i-====== 2.45E-08 2.30E-08 _ ' I 單位:安培(A) 其中Vd係為光敏薄膜電晶汲極電極的量測電壓,而vg係為光 Γ' ^ 1 敏薄膜電晶體閘極電極的量測電壓,在bright情況下環境亮度約 2150 cd/m2,在dark情況下則係將其置於一黑盒子中,以排除其他 外部光源進行量測。 進一步比較表二與表三,其中,在bright與dark環境 下所量測之電流差值,Ibrighr Idark,本發明之電流差值較習 知的電流差值約大1 〇的一次方倍。因此,光敏元件2〇〇 的電流差值可較容易的被讀取線路240所偵測。 t 此外,本發明之光敏元件可被結合於每個一般的晝素 或者部份的一般畫素,以形成讀取晝素(read〇ut pixel),因 此使得液晶顯器面板可提供觸摸與讀取的功能,亦稱之為 内建式觸控面板(In-cell touch panel)。而所需内建的光敏元 件的數量則被決定於内建式觸控面板之觸控功能所需之解 析度。 進一步參閱第4 A圖,其係繪示第2圖之第一較佳實施 例應用於一讀取晝素之示意電路圖。其中,讀取晝素被配 12 200836090 置於/夜晶顯示器之薄膜電晶體陣列基板(TFT substrate)。 : ° 薄膜電晶體陣列基板包含有複數個閘極線路與 複數個育料線路形成於其上。而這些閘極線路與資料線路 共同定義了複數個晝素。為簡化並清楚的描述本發明之讀 取晝素’第4A圖僅繪示單一讀取畫素其分別結合閘極線路 420與資料線路410,並省略一般晝素(未包含光敏元件之 畫素)。讀取晝素包含有一晝素薄膜電晶體450以及一光敏 凡件400。晝素薄膜電晶體450係使用來作為一開關元 件,以控制液晶顯示器晝素所需之電荷。此液晶顯示器之 晝素薄膜電晶體450的汲極電極與閘極電極則分別被連接 至資料線路410與閘極線路420。而光敏元件400則包含 有一光敏薄膜電晶體430以及一開關薄膜電晶體435,其 係耦接於閘極線路421以及讀取線路440之間。所以,本 發明之讀取畫素可不必利用一額外的偏壓線路,以提供光 敏薄膜電晶體430以及開關薄膜電晶體435產生光電流 所需的電壓。因此,利用本發明之具有讀取畫素之液晶顯 不器其開口率可有效地被提高。此外,如前所述,由於本 發明之光電流差值相較於習知的光敏元件的光電流差值為 大’因此,其光電流差值亦可較容易地被讀取電路所量測, 故本發明之光敏元件的尺寸亦可因此而進一步的被降低。 而且,利用串連連接方式以增加對光線變化敏感度之光敏 薄膜電晶體的數量亦可因此而減少。 參閱第4B圖係繪示第2圖之第一較佳實施例應用於另 一讀取晝素之示意電路圖。第4B圖之讀取晝素與第4A圖 之讀取畫素相似,亦包含有晝素薄膜電晶體450a與光敏元 13 200836090 件400a。然而,此光敏元件400a係連接於閘極線路420a 以及讀取線路440a之間,其中晝素薄膜電晶體450a之閘 極電極亦連接於閘極線路420a。因此,由上述之第4A圖 與第4B圖中可知,本發明之畫素薄膜電晶體與光敏元件可 連結於相同之閘極線路或者是不同之閘極線路,均可有效 地量測光線亮度的變化。 第5A圖係繪示第2圖之第一較佳實施例應用於又一 讀取畫素之示意電路圖,而第5B圖則繪示此液晶顯示器之 一正常晝素示意圖其不具有光敏元件。一般而言,具有觸 控功能之液晶顯示器包含了讀取晝素與一般晝素,其中讀 取晝素具有光敏元件,而一般晝素則不具備有光敏元件。 習知的光敏元件通常利用一共通線路作為偏壓線路,以提 供光敏薄膜電晶體所需之電壓。然而,在讀取線路與畫素 薄膜電晶體之源極電極之間,將因此而產生一電容(Cps ; 未圖示)。所以,一般晝素的儲存電容(Cst)將因此而必須被 增加,以補償讀取晝素中額外的電容(Cps)。其將造成具有 光敏元件之液晶顯示器的開口率因此而被限制。 應用本發明之第一較佳實施例之具有讀取晝素之液晶 顯示器,其讀取畫素之儲存電容(Cst) 552A可被配置於晝 素薄膜電晶體550A之源極電極與讀取線路540之間,故 亦可被稱之為Cst在讀取線路(Cst on readout line)。此外, 一般晝素的儲存電容(Cst) 552B則可以被配置於晝素薄膜 電晶體550B之源極電極與閘極線路521之間,故亦可被 稱之為Cst在閘極線路(Cst on gate line)。因此,本發明之 具有讀取晝素之液晶顯示器可有效地將共通線路由薄膜電 14 200836090 晶體陣列基板上移除。所以,本發明之具有讀取晝素之液 晶顯示器的開口率將可有效地被提升。 苓閱第6圖,係繪示本發明之光敏元件之第二較佳實 施例之不意圖。此光敏元件6〇〇包含有一開關薄膜電晶體 610以及一光敏薄膜電晶體62〇。其中,開關薄膜電晶體 • 610的源極電極616連接至讀取線路64〇,而開關薄膜電 . 晶體610之閘極電極612則連接至開關線路63〇。開關薄 膜電晶體610的汲極電極614連接至光敏薄膜電晶體 〇 62〇的源極電極626。光敏薄膜電晶體620的閘極電極 622則連接至開關線路63〇,光敏薄膜電晶體62〇的汲極 電極624連接至導電線路65〇。當光敏元件6〇〇被使用 於部份或全部之液晶顯示器的畫素之中時,開關線路63〇 可以利用液晶顯示器之閘極線路,而導電線路65〇則可利 用液晶顯示為之共通線路或閘極線路。表四為此光敏薄膜 電晶體的電流量測值。 $四:立敏薄膜電晶體的電洎量測值 W/L=48/5; Vd=5V Vg = 5V VG=10V Vg=15V Dark 2.34E-08 7.88E-07 2.31E-06 Bright 3.98E-07 1.85E-06 3.71E-06 ^bright'Idark 3.75E-07 1.07E-06 1.4E-06 單位:安培(a ) 其中Vd係為光敏薄膜電晶汲極電極的量測電壓,而 Vg係為光敏濤膜電晶體閘極電極的量測電壓,在bright情 〇 15 200836090 丨兄下環境亮度約215〇一…情況下則係將其置於 一黑盒子中’以排除其他外部光源進行量測。 其電差值(Ibright"*Idark)則因光敏薄膜電晶體62q之門 極電極622係被連接至開關線路630,亦即相對於習知液Η " _ 1 _ 二丨· Γ' - ___ P-, Photo TFT -----: Photo TFT + Switch TFT Dark 1.12E-09 1.10E-09 Bright 2.56E-08 2.41E-08 Ibright-Idark ^ _i-====== 2.45E-08 2.30E-08 _ ' I Unit: Ampere (A) where Vd is the measuring voltage of the photosensitive thin film electro-deuterium electrode, and vg is the optical Γ ' ^ 1 The measurement voltage of the gate electrode of the sensitive film transistor is about 2150 cd/m2 in the case of bright. In the case of dark, it is placed in a black box to exclude other external light sources for measurement. Further comparing Tables 2 and 3, where the current difference measured in the bright and dark environments, Ibrighr Idark, the current difference of the present invention is about 1 times larger than the conventional current difference. Therefore, the current difference of the photosensitive element 2〇〇 can be easily detected by the read line 240. In addition, the photosensitive element of the present invention can be combined with each general element or a part of a general pixel to form a read pixel, thereby enabling the liquid crystal display panel to provide touch and read. The function taken is also called the In-cell touch panel. The number of built-in photosensitive elements is determined by the resolution required for the touch function of the built-in touch panel. Referring further to Fig. 4A, there is shown a schematic circuit diagram of the first preferred embodiment of Fig. 2 applied to a read pixel. Among them, the read halogen is equipped with a thin film transistor array substrate (TFT substrate) of 12 200836090 placed/night crystal display. : ° The thin film transistor array substrate includes a plurality of gate lines and a plurality of feed lines formed thereon. These gate lines and data lines together define a plurality of elements. In order to simplify and clearly describe the read halogen of the present invention, FIG. 4A only shows a single read pixel which is combined with the gate line 420 and the data line 410, respectively, and omits the general element (the pixel which does not include the photosensitive element). ). The read halogen includes a halogen film transistor 450 and a photosensitive member 400. The halogen film transistor 450 is used as a switching element to control the charge required for the liquid crystal display. The drain electrode and the gate electrode of the halogen film transistor 450 of the liquid crystal display are connected to the data line 410 and the gate line 420, respectively. The photosensitive element 400 includes a photosensitive film transistor 430 and a switching film transistor 435 coupled between the gate line 421 and the read line 440. Therefore, the read pixel of the present invention does not require an additional bias line to provide the voltage required for the photo-sensitive thin film transistor 430 and the switching thin film transistor 435 to generate photocurrent. Therefore, the aperture ratio of the liquid crystal display having the read pixel of the present invention can be effectively improved. In addition, as described above, since the photocurrent difference of the present invention is larger than that of the conventional photosensitive element, the photocurrent difference can be easily measured by the reading circuit. Therefore, the size of the photosensitive member of the present invention can be further reduced as a result. Moreover, the number of photosensitive thin film transistors that utilize the tandem connection to increase sensitivity to light changes can also be reduced. Referring to Fig. 4B, there is shown a schematic circuit diagram of the first preferred embodiment of Fig. 2 applied to another read pixel. The read pixel of Fig. 4B is similar to the read pixel of Fig. 4A, and also includes a halogen film transistor 450a and a photosensitive element 13 200836090 piece 400a. However, the photosensitive element 400a is connected between the gate line 420a and the read line 440a, and the gate electrode of the halogen film transistor 450a is also connected to the gate line 420a. Therefore, it can be seen from the above-mentioned 4A and 4B that the pixel thin film transistor and the photosensitive element of the present invention can be connected to the same gate line or different gate lines, and can effectively measure the light brightness. The change. Fig. 5A is a schematic circuit diagram showing the first preferred embodiment of Fig. 2 applied to another read pixel, and Fig. 5B is a view showing a normal pixel of the liquid crystal display having no photosensitive element. In general, a liquid crystal display having a touch function includes a reading element and a general element, wherein the reading element has a photosensitive element, and the general element does not have a photosensitive element. Conventional photosensitive elements typically utilize a common line as a bias line to provide the voltage required for the photosensitive thin film transistor. However, between the read line and the source electrode of the pixel thin film transistor, a capacitance (Cps; not shown) is thus generated. Therefore, the general storage capacitor (Cst) of the halogen must therefore be increased to compensate for the extra capacitance (Cps) in the read pixel. It will thus cause the aperture ratio of the liquid crystal display having the photosensitive member to be limited. A liquid crystal display having a read pixel according to a first preferred embodiment of the present invention, the read capacitor storage capacitor (Cst) 552A can be disposed on the source electrode and the read line of the halogen film transistor 550A. Between 540, it can also be called Cst on readout line (Cst on readout line). In addition, the general storage capacitor (Cst) 552B can be disposed between the source electrode of the halogen film transistor 550B and the gate line 521, so it can also be called Cst on the gate line (Cst on Gate line). Therefore, the liquid crystal display having the read pixel of the present invention can effectively remove the common line from the thin film substrate 2008 20089090. Therefore, the aperture ratio of the liquid crystal display having the read halogen of the present invention can be effectively improved. Referring to Figure 6, there is shown a second preferred embodiment of the photosensitive member of the present invention. The photosensitive member 6A includes a switching film transistor 610 and a photosensitive film transistor 62A. Wherein, the source electrode 616 of the switching thin film transistor 610 is connected to the read line 64A, and the switching film is electrically connected. The gate electrode 612 of the crystal 610 is connected to the switch line 63A. The drain electrode 614 of the switching film transistor 610 is connected to the source electrode 626 of the photosensitive film transistor 〇 62 。. The gate electrode 622 of the photosensitive film transistor 620 is connected to the switch line 63A, and the drain electrode 624 of the photosensitive film transistor 62 is connected to the conductive line 65A. When the photosensitive element 6 is used in some or all of the pixels of the liquid crystal display, the switch line 63 can use the gate line of the liquid crystal display, and the conductive line 65 can use the liquid crystal display as the common line. Or gate line. Table 4 shows the current measurements of the photosensitive film transistor. $4: The electric conductivity measurement of the Limin thin film transistor W/L=48/5; Vd=5V Vg = 5V VG=10V Vg=15V Dark 2.34E-08 7.88E-07 2.31E-06 Bright 3.98E -07 1.85E-06 3.71E-06 ^bright'Idark 3.75E-07 1.07E-06 1.4E-06 Unit: Ampere (a) where Vd is the measuring voltage of the photosensitive thin film electro-deuterium electrode, and Vg It is the measuring voltage of the gate electrode of the photosensitive film transistor. In the case of Bright 〇 15 200836090 环境, the ambient brightness is about 215 〇..., it is placed in a black box to exclude other external light sources. Measure. The electric difference value (Ibright"*Idark) is connected to the switch line 630 by the gate electrode 622 of the photosensitive film transistor 62q, that is, relative to the conventional liquid

• 晶顯示器之光敏元件100的驅動電壓,其通常可提供V • 較高的電壓·,是故,電流差值(IbrlghrIdark)將因此而增加VG 且易於項取線路640的量測。 (、 筝閱第7圖,係繪示本發明之光敏元件之第三較佳實 施例之示意圖。此光敏元件700包含有一開關薄膜電曰二 710以及一光敏薄膜電晶體720。開關薄膜電晶體71〇的 源極電極716連接至讀取線路74〇,而開關薄膜電晶體 的閘極電極712則連接至開關線路73〇。開關薄膜電 晶體710的汲極電極714連接至光敏薄膜電晶體72〇的 源極電極726。光敏薄膜電晶體72〇的閘極電極722連接 至導電線路750,而光敏薄膜電晶體72〇的汲極電極724 G ,連接開關線路730。當光敏元件700被應用於液晶顯示 态的部份或全部之晝素中時,開關線路73〇可以利用液晶 j不為的閑極線路’而導電線路75〇則可以利用液晶顯示 -之/、通線路或閘極線路。表五係此光敏薄膜電晶體的電 流量測值。 的電流量• The drive voltage of the photosensitive element 100 of the crystal display, which typically provides a V • higher voltage, so that the current difference (IbrlghrIdark) will therefore increase VG and facilitate the measurement of the line 640. (Fig. 7 is a schematic view showing a third preferred embodiment of the photosensitive member of the present invention. The photosensitive member 700 comprises a switching thin film electrode 710 and a photosensitive film transistor 720. Switching film transistor The source electrode 716 of 71 turns is connected to the read line 74A, and the gate electrode 712 of the switch film transistor is connected to the switch line 73. The gate electrode 714 of the switch film transistor 710 is connected to the photosensitive film transistor 72. The source electrode 726 of the germanium. The gate electrode 722 of the photosensitive thin film transistor 72 is connected to the conductive line 750, and the drain electrode 724 G of the photosensitive thin film transistor 72 is connected to the switch line 730. When the photosensitive element 700 is applied In the case of some or all of the pixels in the liquid crystal display state, the switch line 73A can utilize the idler line 'which is not the liquid crystal j', and the conductive line 75 can use the liquid crystal display, the pass line or the gate line. Table 5 shows the current measurement of the photosensitive film transistor.

W/L=48/5 ; VW/L=48/5 ; V

VD=l〇VVD=l〇V

:15V 16 200836090 - - --- Dark 2.34E-08 2.81E-08 3.26E-08 Bright 3.98E-07 4.72E-07 5.06E-07 Ibright’Idark ~ — _ 3.75E-07 ~~~ _ 4.44E-07 4.74E-07 — 單位:安培(A) 其中VD係為光敏薄膜電晶汲極電極的量測電壓,而 VG係為光敏4獏電晶體閘極電極的量測電壓,在 If况下裒i兄儿度約2150 cd/m2,在dark情況下則係將其置 於-黑盒子中’以排除其他外部光源進行量測。:15V 16 200836090 - - --- Dark 2.34E-08 2.81E-08 3.26E-08 Bright 3.98E-07 4.72E-07 5.06E-07 Ibright'Idark ~ — _ 3.75E-07 ~~~ _ 4.44 E-07 4.74E-07 — Unit: Ampere (A) where VD is the measuring voltage of the photosensitive thin film electro-deuterium electrode, and VG is the measuring voltage of the photosensitive 4 貘 transistor gate electrode, in the case of The lower brother is about 2150 cd/m2, and in the dark case, it is placed in a -black box to exclude other external light sources for measurement.

其電丨l差值(Ibright_idark)同樣地亦被增強,其光敏薄膜 電晶體720的汲極電極724係連接於開關線路73〇故可 提供較高的電壓至光敏薄膜電晶體720的汲極電極724, 相對於習知驅動光敏元件丨〇〇的電壓而言。因此,其電流 差值可被放大且易於被讀取線路74〇所量測。The difference in Ibright_idark is also enhanced, and the drain electrode 724 of the photosensitive thin film transistor 720 is connected to the switch line 73, so that a higher voltage can be supplied to the drain electrode of the photosensitive thin film transistor 720. 724, relative to the voltage of the conventionally driven photosensitive element 丨〇〇. Therefore, its current difference can be amplified and easily measured by the read line 74.

本發明之畫素薄膜電晶體、開關薄膜電晶體以及光敏 薄膜電晶體較佳地係可由非晶矽薄膜電晶體(am〇rphous silicon transistor)所構成。由於非晶矽薄膜電晶體對於照射 在其上的光線敏感,因此,本發明之光敏薄膜電晶體可被 形成於薄膜電晶體陣列基板上,且偵測照射於其上之光線 的亮度改變的情況,也就是說其上之光線亮度的相對差異 值。此光敏薄膜電晶體亦可以一光敏二極體,其可感應照 射於其上之光線亮度,並被連接於開關薄膜電晶體與開關 線路之間。也就是說,此光敏元件可以為一開關薄膜電晶 體與一光敏二極體所構成。或者是,此光敏薄膜電晶體可 17 200836090 以被一光敏電阻所取代,此光敏電阻可感應照射於其上之 光線亮度,並被連接於開關薄膜電晶體與開關線路之間。 因此,此光敏元件可由一開關薄膜電晶體與一光敏電阻所 構成。是故,光敏元件可以由一開關薄膜電晶體與一光债 測元件所構成,此光彳貞測元件可以是例如一光敏薄膜電晶 體、一光敏二極體或一光敏電阻,.同時此光敏元件可控制 流經其上之電流的大小,因此,具有讀取晝素之液晶顯示 器可利用本發明之光敏元件量測照射於其上之光線差異。 本發明之光敏元件不僅可以配置於讀取線路與開關線 路之間’以有效地簡化光敏元件所需之電路的複雜性,並 可有效的增加電流差值,以便於量測照射於其上之光線亮 度的差異,同時還可以增加具有讀取晝素之液晶顯示器的 開口率。本發明之光敏元件亦可以利用開關線路以提供一 較高的電壓在光敏薄膜電晶體的閘極電極或汲極電極上, 以增加電流差值,方便量測照射於其上之光線亮度的差 /、因此,本發明之光敏溥膜電晶體可有效地增加電流的 差值,以易於量測其上之光線亮度的差異。而上述之開關 薄膜電晶體或光敏薄膜電晶體之二端電極,源極電極與汲 極電極,是具有可交換性的,上述之說明僅係方便用來清 邊忒明其結構與組合關係,而非用來限定其範圍。 如熟悉此技術之人員所瞭解的,以上所述僅為本發明 之較佳實施例而已,並非用以限定本發明之申請專利範 =凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾,均應包含在下述之申請專利範圍内。 18 200836090 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂,所附圖式之詳細說明如下: 第1 A圖係綠示—習知液晶顯示器之電流式光敏元件; 第1 B圖係綠示一習知液晶顯示器之電荷式光敏元件; 第2圖係繪示本發明之光敏元件之第一較佳實施例之 不意圖, 第3圖係繪示第2圖之第一較佳實施例在不同環境下 之電流量測曲線圖; 第4A圖係緣示第2圖之第—較佳實施例應用於一讀取 晝素之示意電路圖; 第4B圖係纷示第2圖之第一較佳實施例應用於另—讀 取晝素之示意電路圖; 第5A圖係繪示第2圖之第一較佳實施例應用於又一讀 取晝素之示意電路圖; 第5B圖係繪示液晶顯示器之一正常晝素示意圖; 第6圖係繪示本發明之光敏元件之第二較佳實施例之 不意圖;以及 第7圖係繪示本發明之光敏元件之第三較佳實施例之 示意圖。 【主要元件符號說明】 521 ·•閘極線路 540 :讀取線路 550A ··畫素薄膜電晶體 550B :畫素薄膜電晶體 100 :光敏元件 no :光敏薄膜電晶體 112 :閘極電極 114 ·&gt;及極電極 19 200836090 116 :源極電極 120 :偏壓線路 130 :開關薄膜電晶體 132 :閘極電極 134 :汲極電極 13 6 :源極電極 140 :讀取線路 150 :開關線.路 200 :光敏元件 210 :開關薄膜電晶體 212 :閘極電極 214 :汲極電極 216 :源極電極 220 :光敏薄膜電晶體 222 :閘極電極 224 :汲極電極 226 :源極電極 230 :開關線路 240 :讀取線路 310 :曲線 320 :曲線 330 :曲線 400a :光敏元件 400 :光敏元件 410 :資料線路 552A :讀取晝素之儲存電容 552B :正常畫素的儲存電容 600 :光敏元件 610 :開關薄膜電晶體 612 :閘極電極 614 ·&gt;及極電極 616 :源極電極 620 :光敏薄膜電晶體 622 :閘極電極 624 :汲極電極 626 :源極電極 630 :開關線路 640 :讀取線路 6 5 0 ·導電線路 700 :光敏元件 710 :開關薄膜電晶體 714 :汲極電極 716 :源極電極 720 :光敏薄膜電晶體 722 :閘極電極 724 :汲極電極 726 :源極電極 730 :開關線路 740 :讀取線路 750 :導電線路 20 200836090 420a :閘極線路 420 :閘極線路 4 21 :閘極線路 430 :光敏薄膜電晶體 435 :開關薄膜電晶體 440a :讀取線路 440 :讀取線路 450a :晝素薄膜電晶體 450 :畫素薄膜電晶體 800 :光敏元件 810 :讀取線路 820 :開關線路 ' 830 :偏壓線路 840 :開關薄膜電晶體 850 :光敏薄膜電晶體 860 :電容The pixel thin film transistor, the switch thin film transistor, and the photosensitive thin film transistor of the present invention are preferably composed of an amorphous silicon oxide transistor. Since the amorphous germanium thin film transistor is sensitive to light irradiated thereon, the photosensitive thin film transistor of the present invention can be formed on the thin film transistor array substrate, and the brightness of the light irradiated thereon is changed. That is, the relative difference in the brightness of the light on it. The photosensitive film transistor can also be a photodiode that senses the brightness of the light that is incident thereon and is connected between the switching film transistor and the switching line. That is, the photosensitive member can be composed of a switching thin film transistor and a photosensitive diode. Alternatively, the photosensitive thin film transistor can be replaced by a photoresistor that senses the brightness of the light that is incident thereon and is connected between the switching thin film transistor and the switching line. Therefore, the photosensitive member can be composed of a switching thin film transistor and a photoresistor. Therefore, the photosensitive element can be composed of a switching thin film transistor and an optical debt measuring component, and the optical detecting component can be, for example, a photosensitive thin film transistor, a photosensitive diode or a photoresistor. The component can control the magnitude of the current flowing therethrough, and therefore, the liquid crystal display having the read pixel can measure the difference in light irradiated thereon by using the photosensitive member of the present invention. The photosensitive member of the present invention can be disposed not only between the read line and the switch line to effectively simplify the complexity of the circuit required for the photosensitive element, but also effectively increase the current difference so as to measure the illumination thereon. The difference in brightness of the light can also increase the aperture ratio of the liquid crystal display having the read pixel. The photosensitive member of the present invention can also utilize a switching circuit to provide a higher voltage on the gate electrode or the drain electrode of the photosensitive film transistor to increase the current difference and conveniently measure the difference in brightness of the light irradiated thereon. Therefore, the photosensitive ruthenium film transistor of the present invention can effectively increase the difference in current to easily measure the difference in brightness of light thereon. The above-mentioned switching thin film transistor or the two-terminal electrode of the photosensitive thin film transistor, the source electrode and the drain electrode are exchangeable, and the above description is only convenient for clearing the structure and the combined relationship of the edge. It is not intended to limit its scope. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications or modifications are intended to be included in the scope of the claims below. 18 200836090 BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; The current-type photosensitive element of the display; the first B-picture is a charge-type photosensitive element of a conventional liquid crystal display; the second figure shows the intention of the first preferred embodiment of the photosensitive element of the present invention, FIG. The current measurement curve diagram of the first preferred embodiment of FIG. 2 in different environments is shown; FIG. 4A shows the second diagram of the second embodiment - the preferred embodiment is applied to a schematic circuit diagram for reading a pixel FIG. 4B is a schematic circuit diagram showing the first preferred embodiment of FIG. 2 applied to another read pixel; FIG. 5A is a view showing the first preferred embodiment of FIG. 2 applied to another read; FIG. 5B is a schematic diagram showing a normal pixel of a liquid crystal display; FIG. 6 is a schematic view showing a second preferred embodiment of the photosensitive member of the present invention; and FIG. A schematic view showing a third preferred embodiment of the photosensitive member of the present invention[Main component symbol description] 521 ·• Gate circuit 540: Reading line 550A ··Pixel film transistor 550B: Picture film transistor 100: Photosensitive element no: Photosensitive film transistor 112: Gate electrode 114 ·&gt And the electrode 19 200836090 116 : the source electrode 120 : the bias line 130 : the switching film transistor 132 : the gate electrode 134 : the drain electrode 13 6 : the source electrode 140 : the read line 150 : the switch line . Photosensitive element 210: Switching film transistor 212: Gate electrode 214: Bipolar electrode 216: Source electrode 220: Photosensitive film transistor 222: Gate electrode 224: Gate electrode 226: Source electrode 230: Switching line 240 : Reading line 310: curve 320: curve 330: curve 400a: photosensitive element 400: photosensitive element 410: data line 552A: reading storage capacitor 552B: storage capacitor 600 of normal pixel: photosensitive element 610: switching film The transistor 612: the gate electrode 614 · and the electrode 616 : the source electrode 620 : the photosensitive film transistor 622 : the gate electrode 624 : the drain electrode 626 : the source electrode 630 : the switch line 640 : the read line 6 5 0 · Conductive line 700: photosensitive element 710: switching thin film transistor 714: drain electrode 716: source electrode 720: photosensitive thin film transistor 722: gate electrode 724: drain electrode 726: source electrode 730: switch line 740: read line 750: Conductive line 20 200836090 420a: Gate line 420: Gate line 4 21: Gate line 430: Photosensitive film transistor 435: Switching film transistor 440a: Reading line 440: Reading line 450a: Alizarin film electric Crystal 450: pixel thin film transistor 800: photosensitive element 810: read line 820: switch line '830: bias line 840: switch film transistor 850: photosensitive film transistor 860: capacitor

21twenty one

Claims (1)

200836090 十、申請專利範圍: 1_ 一種光敏元件,至少包含: 一第一導電線路; 一第二導電線路; 一開關薄膜電晶體具有一第一閘極電極,—第一端電 極以及一第二端電極,其中,該第一閘極電極電性連2至 該第一導電線路,以及該第一端電極電性連接至該第二 電線路;以及 x ’ 一光偵測元件電性連接於該第一導電線路與該第二 電極之間。 一 2.如申請專利範圍第丨項所述之光敏元件,其中上述 之光偵:元件包含-光敏薄膜電晶體,具有-第:閘極電 極苐二端電極以及一第四端電極。200836090 X. Patent application scope: 1_ A photosensitive element comprising at least: a first conductive line; a second conductive line; a switching film transistor having a first gate electrode, a first end electrode and a second end An electrode, wherein the first gate electrode is electrically connected to the first conductive line, and the first end electrode is electrically connected to the second electric line; and the x' photodetecting element is electrically connected to the Between the first conductive line and the second electrode. 2. The photosensitive member of claim 2, wherein the photodetecting element comprises a photosensitive thin film transistor having a -: a gate electrode, a second terminal electrode, and a fourth terminal electrode. 一 3:如申請專利範圍第1項所述之光敏元件,其中該光 敏元件係配置於一基板。 4.如申請專利範圍帛3項所述之光敏元件,其中該基 糸一液晶顯示器之薄膜電晶體陣列基板。 —5·如中請專利範圍帛2項所述之光敏元件,其中該第 電極與該第四端電極電性連接至該第一導電線路, 4第二端電極電性連接至該第二端電極。 22 200836090 2項所述之光敏元件,其中該第 第一導電線路,該第四端電極電 ,以及该第三端電極電性連接至 6·如申請專利範圍第 二閘極電極電性連接至該 性連接至一第三導電線路 該第二端電極。 —7.如中請專利範圍第2項所述之光敏S件,其中該第 極電性連接至 性連接至4= 一第三導電線路’該第四端電極電 莓弟一導電線路,以及該第三端電 該第二端電極。 敏薄2項料之光敏元件,其中該光 、㈤體和該開_膜電晶體均係_非晶料膜電晶 CJ 素包含 10.—種讀取晝素,係使用於一液晶顯示器, 該讀取書 元件包含·· 晝素薄膜電晶體配置於該液晶顯示器之一基板; 光敏元件配置於該基板,其中該光敏 土 , 第一導電線路; 第二導電線路; 開關薄膜電晶體,具有一第 閘極電極、一第一 端 23 200836090 电極以及一第二端電極,其中該一 該第一導雷绐% _ $極電極電性連接至 電線路;以及 电極電性連接至該第二導 一光偵測元件電性連接該第— 極之間。 V電線路與該第二端電 其中該 閘極電 〇 U 丄U·如申請專利_ 10項所述之讀 光m件包含—光敏薄膜電晶體,具有一旦第、 極、-第二端電極以及一第四端電極。 12·如申請專利範圍第1〇 +主Μ 只尸7迷之碩取書素,並中古玄 畫素薄膜電晶體包含一第二 - /、宁4 說弟一閘極電極電性連接至該基板之 一弟一閘極線路,以菸咭笙、皆 ^ Η搞始牧 導電線路係該基板之一第二 甲1線路,且鄰近於該第-閘極線路。 查辛=?請專利範㈣10項料之讀取晝素,其中該 畺素溥膜電晶體包合一坌一 該第-導電纽' ί 電性連接至該基板之 路。 ' L亥第一導電線路係該基板之-閘極線 第 路 申π專利|&amp; 1(帛11項所述之讀取畫素,其中該 甲1極電極與遠第四端電極電性連接至該第一導電線 以及δ亥第三端電極電性連接至該第二端電極。 其中該 15·如中請專利範圍第u項所述之讀取晝 24 200836090 第二閘極電極電性連接至該第 電性連接至一第三導電線路, 至該第二端電極。 ‘电線路,該第四端電極 、及該第二端電極電性連接 H如申請專利範圍第15項所述之讀取晝素,其中續 弟二導電線路係該基板之一共通線路。 C 第專11韻述之讀取畫素,其中該 接至一第三導電線路,該第四端電極 至4 —導電線路,以及該第三端電極電性連接 至該弟二端電極。 第三^了請專利範圍第17項所述之讀取晝素,其中該 一導電線路係該基板之一共通線路。 a如申請專利範_ u項所述之讀取晝素,发中續 〇 _膜電晶體、該晝素薄膜電晶體及該光敏薄膜電晶體 均係非晶矽薄膜電晶體。 、、20·如申請專利範圍第10項所述之讀取晝素,其中上 乂光偵測元件包含一光敏二極體及一光敏電阻其中之 21·種液晶顯示器,至少包含: 一基板; 25 200836090 複數個閘極線路及複數個資料線路彼此相交並配置於 該基板; 、 複數個第一導電線路配置於該基板;以及 複數個讀取晝素配置於該基板,其中該讀取晝素包含: 一晝素薄膜電晶體;以及 Λ —光敏元件,其中該光敏元件更包含: 、一開關薄膜電晶體,具有一第一閘極電極、一第一端 t極以及-第二端電極,該第—閘極電極電性連接至該些 C^ %極線路其中之―’且該第-端電極電性連接至該些第一 導電線路其中之一;以及 一光偵測元件連接於該些閘極線路其中之該一與該第 二端電極間。 ' :22.如申凊專利範圍第21項所述之液晶顯示器,更包 含複數個一般畫素,不具有該光敏元件。 I y 一23 ·如申凊專利範圍第21項所述之液晶顯示器,其中 該光偵7元件包含-光敏薄膜電晶體,具有-第二閘極電 極第二端電極以及一第四端電極。 24·如申請專利範圍第23項所述之液晶顯示器,其中 上述之第二閘極電極與該第四端電極電性連接至該些閘極 Λ路’、中H ’以及該第三端電極電性連接至該第二端 電極。 26 200836090 25 ·如申明專利範圍第23項所述之液晶顯示器,更包 含複數㈣二導電線路配置於該基板,其中該第二閘極電 極電性連接至該些閘極線路其巾之該―,㈣四端電極電 !·生連接该些第二導電線路其中之―,以及該第三端電極電 性連接至該第二端電極。 ^ =·如申請專利範圍第25項所述之液晶顯示器,其中 °亥些第二導電線路係該液晶顯示器之共通線路。A photosensitive member according to claim 1, wherein the photosensitive member is disposed on a substrate. 4. The photosensitive member according to claim 3, wherein the substrate is a thin film transistor array substrate of a liquid crystal display. The photosensitive member of claim 2, wherein the first electrode and the fourth terminal electrode are electrically connected to the first conductive line, and the second terminal electrode is electrically connected to the second end electrode. The light-sensitive element of claim 2, wherein the first conductive line, the fourth terminal electrode is electrically connected, and the third terminal electrode is electrically connected to the sixth gate electrode. This is connected to the second terminal electrode of a third conductive line. 7. The photosensitive S-piece of claim 2, wherein the first pole is electrically connected to 4=a third conductive line, the fourth end electrode is a conductive line, and The third end electrically charges the second terminal electrode. a light-sensitive two-component photosensitive member, wherein the light, the (five) body and the open-film transistor are both - the amorphous film C-crystal contains 10. - a read halogen, which is used in a liquid crystal display. The reading book element comprises: a halogen film transistor disposed on a substrate of the liquid crystal display; a photosensitive element disposed on the substrate, wherein the photosensitive earth, a first conductive line; a second conductive line; a switching film transistor having a first gate electrode, a first end 23, a 200836090 electrode, and a second terminal electrode, wherein the first conductive Thunder % _ $ electrode is electrically connected to the electric circuit; and the electrode is electrically connected to the The second light-detecting element is electrically connected between the first poles. The V-electric circuit and the second terminal are electrically connected to the gate electrode, wherein the reading light m component comprises a photosensitive film transistor having a first, a second, and a second terminal electrode. And a fourth terminal electrode. 12·If the patent application scope is the first 〇+主Μ, only the corpse 7 is the master of the book, and the medieval mysterious film transistor contains a second-/, Ning 4, a brother-electrode is electrically connected to the One of the substrates is a gate line, and the first step of the conductive circuit is a second one of the substrate, and adjacent to the first gate line. Chasin =? Please read the sample of the 10 items of the patent (4), in which the halogen film is packaged into one, and the first conductive layer is electrically connected to the substrate. 'L Hai's first conductive line is the substrate-gate line 路 申 π patent|&amp; 1 (帛11 item of reading pixels, wherein the first pole electrode and the far fourth end electrode are electrically Connecting to the first conductive line and the third end electrode of the δ hai are electrically connected to the second end electrode. wherein the · 24 is as described in the scope of the patent scope, the second gate electrode is Connected to the third electrical connection to the third conductive line to the second terminal electrode. The electrical circuit, the fourth terminal electrode, and the second terminal electrode are electrically connected to each other as in claim 15 The reading of the halogen, wherein the second conductive circuit is a common line of the substrate. C. The reading pixel of the 11th rhyme, wherein the fourth pixel is connected to a third conductive line, the fourth terminal electrode is 4 - a conductive line, and the third terminal electrode is electrically connected to the second terminal electrode. The third reading of the reading element according to claim 17, wherein the conductive line is a common line of the substrate a. As described in the patent application _ u, read the 昼素,发中中〇_膜电The film, the halogen film transistor, and the photosensitive film transistor are both amorphous germanium film transistors. 20, as described in claim 10, wherein the upper light detecting element comprises a photosensitive diode and a photosensitive resistor of the 21st liquid crystal display, comprising at least: a substrate; 25 200836090 a plurality of gate lines and a plurality of data lines intersecting each other and disposed on the substrate; and a plurality of first conductive lines Disposed on the substrate; and a plurality of read halogens disposed on the substrate, wherein the read halogen comprises: a halogen film transistor; and a photosensitive element, wherein the photosensitive element further comprises: a crystal having a first gate electrode, a first terminal t-pole, and a second terminal electrode, wherein the first gate electrode is electrically connected to the "C-% pole line" and the first terminal electrode Electrically connected to one of the first conductive lines; and a light detecting element is connected between the one of the gate lines and the second end electrode. ' : 22. As claimed in the patent scope 21 item The liquid crystal display further includes a plurality of general pixels, and does not have the photosensitive element. The liquid crystal display according to claim 21, wherein the photodetection 7 element comprises a photosensitive film. The liquid crystal display of the second gate electrode and the fourth terminal electrode of the second gate electrode, wherein the second gate electrode and the fourth terminal electrode are electrically And the third terminal electrode is electrically connected to the second terminal electrode. 26 200836090 25 · The liquid crystal display according to claim 23, further comprising plural (4) two conductive lines are disposed on the substrate, wherein the second gate electrode is electrically connected to the gate lines of the pads, and the (four) four-terminal electrodes are electrically connected to the second conductive lines. And the third terminal electrode is electrically connected to the second terminal electrode. The liquid crystal display of claim 25, wherein the second conductive line is a common line of the liquid crystal display. 27·如申請專利範圍第23項所述之液晶顯示器,更包 含複數個第二導電線路配置於該基板,其中該第二間極電 =電性連接至該些第二導電線路其中之―,該第四端電極 电性連接至該些閘極線路其中之該―,以及該第三端電極 電性連接至該第二端電極。 :28.如申請專利範圍第23項所述之液晶顯示器,其中 〇 ^ _薄膜電晶體、該畫素薄膜電晶體及該光敏薄膜電曰曰 體均係非晶石夕薄膜電晶體。 ▲ 29.如中請專利範圍帛21項所述之液晶顯示器,其中 該晝素薄膜電晶體具有一第三閘極電極電性連接至另1 些閘極線路。 邊 其中 些閘 —〇:如申請專利範圍帛21項所述之液晶顯示^ 4畫素薄膜電晶體具有一第三閘極電極電性連接3 27 200836090 極線路其中之該一。 3 L如申請專利範圍第21項所述之液晶顯示器,其中 忒光偵測70件包含一光敏二極體及一光敏電阻其中之一。 . 2.如申睛專利範圍第21項所述之液晶顯示器,其中 、 忒靖取晝素更包含—第一儲存電容配置於該畫素薄膜電晶 體之兩端電極其中之一與該些第一導電線路其中之 間。 ° () 33 λ •申請專利範圍第32項所述之液晶顯示器,更包 含複數個一妒佥I 版畫素,不具有該光敏元件。 34·如由上 )·甲請專利範圍第33項所述之液晶顯示器,其中每 一該一般金喜 一思京更包含一第二儲存電容配置於該一般晝素之 一晝素薄腹费^ a 、电_體的兩端電極其中之一與該些閘極線路盆 中之一間。 八 U 28The liquid crystal display of claim 23, further comprising a plurality of second conductive lines disposed on the substrate, wherein the second polarity is electrically connected to the second conductive lines, The fourth terminal electrode is electrically connected to the one of the gate lines, and the third terminal electrode is electrically connected to the second terminal electrode. The liquid crystal display according to claim 23, wherein the 〇 ^ _ thin film transistor, the pixel thin film transistor, and the photosensitive thin film electric hydride are both amorphous thin film transistors. The liquid crystal display of claim 21, wherein the halogen film transistor has a third gate electrode electrically connected to the other gate lines. Some of the gates - 〇: as shown in the patent application 帛 21, the liquid crystal display ^ 4 pixel thin film transistor has a third gate electrode electrical connection 3 27 200836090 pole line one of them. 3 L The liquid crystal display of claim 21, wherein the photodetection 70 comprises one of a photodiode and a photoresistor. 2. The liquid crystal display according to claim 21, wherein the liquid crystal display further comprises: the first storage capacitor is disposed on one of the two end electrodes of the pixel thin film transistor and the first A conductive line is between them. ° () 33 λ • The liquid crystal display of claim 32, which further includes a plurality of I-picture pixels, does not have the photosensitive element. 34·如上)·A Please refer to the liquid crystal display according to item 33 of the patent scope, wherein each of the general Jin Xi Si Jing further includes a second storage capacitor disposed in the general element a, one of the two ends of the electric body and one of the gate line basins. Eight U 28
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416387B (en) * 2010-08-24 2013-11-21 Au Optronics Corp Touch panel
TWI425494B (en) * 2011-04-25 2014-02-01 Au Optronics Corp Liquid crystal display having photo-sensing input mechanism

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416387B (en) * 2010-08-24 2013-11-21 Au Optronics Corp Touch panel
US9323401B2 (en) 2010-08-24 2016-04-26 Au Optronics Corporation Touch panel
US9575611B2 (en) 2010-08-24 2017-02-21 Au Optronics Corporation Touch panel
TWI425494B (en) * 2011-04-25 2014-02-01 Au Optronics Corp Liquid crystal display having photo-sensing input mechanism

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