TW200835015A - A self-assembled monolayer for tuning the work function of metal electrodes - Google Patents

A self-assembled monolayer for tuning the work function of metal electrodes Download PDF

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TW200835015A
TW200835015A TW96104959A TW96104959A TW200835015A TW 200835015 A TW200835015 A TW 200835015A TW 96104959 A TW96104959 A TW 96104959A TW 96104959 A TW96104959 A TW 96104959A TW 200835015 A TW200835015 A TW 200835015A
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group
work function
metal electrode
alkyl group
electrode
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TW96104959A
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Chinese (zh)
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Yu-Tai Tao
Kun-Yang Wu
Ming-Chin Hung
Hung-Wei Huang
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Yu-Tai Tao
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Abstract

The present invention discloses self-assembled monolayers with a general formula G1-R-G2, wherein G1 is SH. R of the mentioned general formula comprises one selected from the group consisting of the following: linear, branched, or cyclic alkyl moiety; linear, branched, or cyclic alkyl moiety including one or more than one substituted moiety selected from the group consisting of alkene, alkyne, halide moiety, alkoxy, siloxy, ketone, alcohol, thioether, carbamate or amino moiety; aromatic group; heterocyclic group; multiple fused ring group; and, multiple fused ring group with heteroatoms. G2 is an electron-withdrawing group.

Description

200835015 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種自組裝單層膜,特別是有關於一 種可用以調整金屬電極之功函數的自組裝單層膜。 【先前技術】 顯示技術作為人機通訊與資訊展示的平台已大量被應 用在各個領域如工商業、軍事、交通、醫療、教育,以及 # 娛樂等。半個世紀以來,科學與工程研究的不斷投入已發 展出諸多類型的顯示技術,其中有機電激發光(Organic Electroluminescence; 0EL)技術由於具有優越的性能與低 製作成本的特性,極有機會成為下一世代最具應用前景的 顯示與照明光源。 一般OEL元件皆具有二極體的性質,其依發光層材料 的不同可分為小分子有機發光二極體(〇rganie • Light-Emitting Diode; OLED)以及高分子有機發光二極體 η (Polymer Light-Emitting Diode; PLED)。〇LED 技術的發展 係自科達公司(Eastman Kodak Company)的 Tang 和200835015 IX. Description of the Invention: [Technical Field] The present invention relates to a self-assembled monolayer film, and more particularly to a self-assembled monolayer film which can be used to adjust the work function of a metal electrode. [Prior Art] Display technology has been widely used as a platform for human-machine communication and information display in various fields such as industrial and commercial, military, transportation, medical, education, and entertainment. Over the past half century, the continuous investment in science and engineering research has developed many types of display technologies. Among them, Organic Electroluminescence (0EL) technology has the opportunity to become the next one due to its superior performance and low production cost. The most promising display and illumination source for a generation. Generally, OEL components have the properties of a diode, which can be classified into a small molecule organic light emitting diode (OLED) and a polymer organic light emitting diode η (Polymer) depending on the material of the light emitting layer. Light-Emitting Diode; PLED). The development of 〇LED technology is from Tang and of the Eastman Kodak Company.

Vanslyke於1987年成功利用熱蒸鍍法製造具有高量子效率 和低驅動電壓的OLED元件開始。OLED的獨特性能係為 當有電流通過時就會發光,且光的顏色取決於有機分子的 結構。不同的分子結構可分別產生紅光、綠光或藍光,因 200835015 而得到全彩顯示所需之RGB晝素。OLED發光元件具有自 發光、南對比、應答快速、輕量、低耗電' 可撓曲以及超 廣視角等優點,其可應用範圍包括各類電子電器產品之平 面或曲面顯示器、各類標誌、指示,招牌等商業照明、一 般室内照明以及功能性大面積照明等,因此成為炙手可熱 的研究主題。 OLED的工作原理係建基於電致激光現象 (Electroluminescence)。當處於激態的一對分別帶有正負電 的載子(charge carrier)進行結合結合(recombinati〇n)而形成 激子(exciton)時,激子之能量最終以光子(phot〇n)的形式被 釋放出來而產生光;其中,上述之載子帶正電者稱為電洞 (hole)而帶負電者稱為電子(eiectron)。參考第一圖所示,其 係為常見之OLED元件構造示意圖。最基本之〇led元件 包含一陰極(cathode)llO、一陽極(anode)150以及一有機發 光層(emissive layer)130 ;於上述之電極與有機發光層中間 可以更包括载子注入層(hole injection layer)140以及電子 傳導層(electron transport layer)120 以利 OLED 的運作。上 述之OLED構件可以更包含一透明基板16〇,且上述各 OLED元件係建構於透明基板160之上。參照第一圖,箭 號所示係上述OLED之發光方向。當OLED外加一正向偏 壓時’元件内部形成一電場,在電場的作用下,電子以及 200835015 5】自上述之陰極與陽極注入有機材料並遷移至於上 述之發光層。電子與電洞在發光層中相遇並產生激子,激 子在私場作用下將能量傳遞給發光材料分子並令其電子躍 遷至激態,最後該被激發電子將能量以光子的形式釋放出 來並回到基態而完成電激發光。 由於OLED係藉由載子的輻射性結合過程而發光,截 子由%極^產生並注入有機材料的效率影響元件發光效率 甚鉅。同時,正負載子注入的速率需要求儘量平衡,否則 不但會降低载子的結合結合比例,還可能在有機層中產生 直通電流而生熱並因此縮短元件材料的壽命。載子由電極 注入有機材料時需克服一能障(energy barrier),對電洞而 a,該能障係為陽電極之功函數與陽電極所接觸之有機材 料的最兩填滿分子軌域(Lowest Unoccupied MolecularIn 1987, Vanslyke successfully used thermal evaporation to produce OLED components with high quantum efficiency and low driving voltage. The unique properties of OLEDs are that they illuminate when current is passed through, and the color of the light depends on the structure of the organic molecules. Different molecular structures can produce red, green or blue light respectively, and the RGB elements required for full color display are obtained as of 200835015. The OLED illuminating element has the advantages of self-illumination, south contrast, fast response, light weight, low power consumption, flexibility and wide viewing angle, and its applicable range includes flat or curved display of various electronic and electrical products, various types of signs, Indications, commercial lighting such as signboards, general indoor lighting, and functional large-area lighting have become hot topics of research. The working principle of OLED is based on electroluminescence (Electroluminescence). When an excitatory pair of positively and negatively charged carriers are combined to form an exciton, the energy of the exciton is ultimately in the form of a photon (phot〇n). It is released to generate light; among them, the above-mentioned carrier is called a hole and the negative is called an eiectron. Referring to the first figure, it is a schematic diagram of a common OLED element structure. The most basic LED device comprises a cathode 110, an anode 150 and an emissive layer 130. The electrode and the organic light-emitting layer may further include a hole injection layer. A layer 140 and an electron transport layer 120 facilitate the operation of the OLED. The OLED member may further include a transparent substrate 16A, and each of the OLED elements is constructed on the transparent substrate 160. Referring to the first figure, the arrow indicates the direction of illumination of the above OLED. When an OLED is applied with a forward bias voltage, an electric field is formed inside the element, and under the action of the electric field, electrons and the cathode and the anode are injected into the organic material and migrate to the above-mentioned light-emitting layer. The electrons and the holes meet in the luminescent layer and generate excitons. The excitons transfer energy to the luminescent material molecules under the action of the private field and cause the electrons to transition to the excited state. Finally, the excited electrons release the energy in the form of photons. And return to the ground state to complete the electrical excitation light. Since the OLED emits light by the radiation bonding process of the carrier, the efficiency of the interception generated by the % electrode and injected into the organic material affects the luminous efficiency of the element. At the same time, the rate of positive load sub-injection needs to be balanced as much as possible, otherwise it will not only reduce the combination ratio of the carrier, but also generate a through current in the organic layer to generate heat and thus shorten the life of the component material. When the carrier is injected into the organic material by the electrode, it is necessary to overcome an energy barrier, and for the hole, a, the energy barrier is the work function of the anode electrode and the most two filled track regions of the organic material contacted by the anode electrode. (Lowest Unoccupied Molecular

Orbital; LUMO)之間的能階差,而對電子而言,其所需跨越 之能隙則為陰電極之功函數與陰電極所接觸之有機材料的 最低未填滿分子執域(Highest 〇ccupied M〇lecular 〇rbital; HOMO)之間的能階差。因此,藉由匹配適當的電極與有機 材料,可有效縮小載子注入能障並大大提升載子的注入效 率。 傳統的OLED元件大都係設計為向下發光 (bottom-emitting),其陽極為透明的電極(例如IT〇),光線 200835015 而要牙過底下的玻璃基板與薄膜電晶體(TFT)才能發射出 去’因此部分的光會被TFT與電容中的不透明導線擋住而 降低了開口率以及總出光面積。近年來許多研究團隊紛紛The energy difference between Orbital; LUMO), and for electrons, the required energy gap is the lowest unfilled domain of the organic material in contact with the cathode electrode (Highest 〇) The energy level difference between ccupied M〇lecular 〇rbital; HOMO). Therefore, by matching appropriate electrodes and organic materials, the carrier injection energy barrier can be effectively reduced and the carrier injection efficiency can be greatly improved. Most of the traditional OLED components are designed to be bottom-emitting, the anode of which is a transparent electrode (such as IT〇), and the light of 200835015 is required to transmit the underlying glass substrate and thin film transistor (TFT). Therefore, part of the light is blocked by the TFT and the opaque wire in the capacitor to reduce the aperture ratio and the total light exit area. Many research teams have been in recent years.

才又入上發光型(toP-emitting)〇LED的設計;上發光型OLED 採用k明的陰極而陽極則為不透明的金屬,光線係向上發 射出去而不受底下不透明元件的影響,因此可改進光被 TFT私路所遮蔽之缺點並大幅提高開口率以及出光面積。 然而’一個需克服的缺點係為,目前常用的金屬陽極如銀 至豸戈疋銘金屬專雖具有極佳之反射率(renectance),其功 函數部偏低並因而大幅增加了電洞注入時需克服的能障。 因此’一種可行的技術以調整上述之金屬陽極的功函數, 亚同時保持其光學性質(高反射率),係目前產業界亟欲發 展的目標。 【發明内容】 雲於上述之發明背景中,為了符合產業上之要求,本 發明提供一種用以調整金屬電極功函數的自組裝單層膜 及其在製作可調整功函數之金屬電極以及上發光型小分 子有機發光二極體(T0p-emitting 〇rganic Light-emitting Diode; TEOLED)上的應用。 本發明之一目的在於藉由對有機發光二極體之電極進 行修飾,以提升前述有機發光二極體之電極的功函數。 200835015 本發明之另一目的在於藉由對有機發光二極體之陽極 進行修飾,以縮小電洞注入時所需克服之能障。 本發明之又一目的在於提供一種可調整功函數之金屬 氣極(metal electrode wit:h tunable work function)。上述可調 - 整功函數之金屬電極可藉由設置一自組裝單層膜於金屬電 • 極的一側以達到調整前述金屬電極的功函數之目的。 本發明之又一目的在於提供一種具有可調整功函數之 • 金屬電極的上發光型有機發光二極體(top-emitting organic light-emitting diode having metal electrodes with tunable woi:k functlon)。前述之上發光型小分子有機發光二極體係 採用本發明所揭露的可調整功函數之金屬電極作為陽極, 且其陰極端係為_透明電極。 根據以上所述之目的,本發明揭示了一種用以調整金 屬電極功函數的自組裝單層膜G^R-G2。其中,G1係為SH, _ R係選自下列族群中之一者或其組合:未取代之直鏈烷 , 基、支鏈烷基或環狀烷基;具有一或多個由烯基、炔基之 ^、、且3作為取代基的直鍵烧基、支鍵烧基或環狀烧基; 方香族團基、雜環團基、多重融環、以及多重融雜環。& 係為一拉電子團基。 200835015 【實施方式】 本發明在此所探討的方向為一種用以調整金屬電極功 函數的自組裝單層膜。為了能徹底地瞭解本發明,將在下 列的描述中提出詳盡的製程步驟或組成結構。顯然地,本 發明的施行並未限定於該領域之技藝者所熟習的特殊細 即。另一方面,眾所周知的組成或製程步驟並未描述於細 節中,以避免造成本發明不必要之限制。本發明的較佳體 _ 系會詳細描述如下,然而除了這些詳細描述之外,本發明 還可以廣泛地施行在其他的體系中,且本發明的範圍不受 限定,以其之後的專利範圍為準。 本發明之第一實施例揭露一種化學結構一般式係為gLr_g2 的自組裝單層膜。其中,G1係為SH,R係選自下列族群中之一者 或其組合:未取代之直鏈烷基、支鏈烷基或環狀烷基;具有一或 多個由烯基Γ、炔基之任意組合作為取代基的直鏈烷基、支鏈烷基 .或環狀絲;耗族團基、雜環縣、錄融環、以及多重融雜 ' %。〇則係為一拉電子團基。於本實施例之一較佳範例中,上述 之G2係選自下列族群:CN、F、C1、价、CFH2、Cf2H % π% CC12H、CC13、CBrH2、CBr2H、CBr3、NO、以及 n〇2。 本發明之第二實施例揭露一種可調整功函數之金屬電極 (metal electrode with tunable work function) ^ 金屬電極包含-金屬電極,以及—自組裝單層膜位於上述金屬電 極之一側。上述之自組裝單層膜包含一種化學結構一般式為 11 200835015Only the design of the toP-emitting 〇LED is adopted; the upper OLED adopts the cathode of k-ming and the anode is opaque metal, and the light is emitted upward without being affected by the opaque components underneath, so it can be improved The shortcomings of light being obscured by the TFT private road and greatly increasing the aperture ratio and the light exit area. However, one of the shortcomings to be overcome is that the commonly used metal anodes such as silver to 豸戈疋铭 metal have excellent renectance, and their work function is low, which greatly increases the hole injection. Energy barriers to overcome. Therefore, a feasible technique to adjust the work function of the metal anode described above while maintaining its optical properties (high reflectivity) is a current development goal of the industry. SUMMARY OF THE INVENTION In the above-mentioned background of the invention, in order to meet the requirements of the industry, the present invention provides a self-assembled monolayer film for adjusting a work function of a metal electrode and a metal electrode for fabricating an adjustable work function and an upper luminescence Application on T0p-emitting 〇rganic Light-emitting Diode (TEOLED). An object of the present invention is to enhance the work function of the electrode of the organic light-emitting diode by modifying the electrode of the organic light-emitting diode. Another object of the present invention is to reduce the energy barrier to be overcome in the injection of a hole by modifying the anode of the organic light-emitting diode. Another object of the present invention is to provide a metal electrode wit (h tunable work function). The metal electrode of the above-mentioned adjustable-to-work function can be adjusted for the purpose of adjusting the work function of the metal electrode by providing a self-assembled monolayer film on one side of the metal electrode. Still another object of the present invention is to provide a top-emitting organic light-emitting diode having metal electrodes with tunable woi (k functlon) having a metal working electrode capable of adjusting a work function. The above-mentioned upper-emitting small-molecular organic light-emitting diode system adopts the metal electrode with adjustable work function disclosed in the present invention as an anode, and the cathode end thereof is a transparent electrode. In accordance with the above objects, the present invention discloses a self-assembled monolayer film G^R-G2 for adjusting the work function of a metal electrode. Wherein G1 is SH, and _R is selected from one of the following groups or a combination thereof: an unsubstituted linear alkane, a branched alkyl group or a cyclic alkyl group; having one or more alkenyl groups, a straight bond group, a bond group or a cyclic alkyl group of the alkynyl group, and 3 as a substituent; a perylene group, a heterocyclic group, a multiple melting ring, and a multiple melting heterocyclic ring. & is a pull electron group. 200835015 [Embodiment] The direction of the invention discussed herein is a self-assembled monolayer film for adjusting the work function of a metal electrode. In order to thoroughly understand the present invention, detailed process steps or constituent structures will be set forth in the description below. Obviously, the practice of the invention is not limited to the particular details familiar to those skilled in the art. On the other hand, well-known components or process steps are not described in detail to avoid unnecessarily limiting the invention. The preferred embodiments of the present invention will be described in detail below, but the present invention can be widely applied to other systems in addition to the detailed description, and the scope of the present invention is not limited, and the scope of the following patents is quasi. A first embodiment of the present invention discloses a self-assembled monolayer film having a chemical structure of the general formula gLr_g2. Wherein G1 is SH, and R is selected from one or a combination of the following groups: unsubstituted linear alkyl, branched alkyl or cyclic alkyl; having one or more alkenyl anthracenes, alkyne Any combination of a radical alkyl group, a branched alkyl group or a cyclic filament as a substituent; a group of a group, a heterocyclic ring, a ring of a recording ring, and a multiple melting '%. 〇 is a pull electron group. In a preferred embodiment of the present embodiment, the G2 is selected from the group consisting of CN, F, C1, valence, CFH2, Cf2H% π% CC12H, CC13, CBrH2, CBr2H, CBr3, NO, and n〇2 . A second embodiment of the present invention discloses a metal electrode with tunable work function ^ a metal electrode comprising a metal electrode, and a self-assembled monolayer film on one side of the metal electrode. The above self-assembled monolayer film comprises a chemical structure of the general formula 11 200835015

Gi-R-G2之化合物,其中,G1係SH,R係選自下列族群中之一者 或其組合:直鍊烷基、支鍊烷基或環狀烷基;含有任一經由一個 或多個選自烯基、炔基、齒基、烷氧基、矽氧基、酮基、醇基、 硫鍵基、胺基曱酯或胺基取代之直鍊烷基、支鍊烷基或環狀烷基; - 芳香族團基、雜環團基、多重融環、多重融雜環,以及雜環,G2 • 係為一拉電子團基。於本實施例之一較佳範例中,上述之G2係選 自下列族群:CN、F、α、ΒΓ、cfh2、CF2H、CF3、CC1H2、CC12H、 • CCl3、CBrH2、CBr2H、CB[3、NO、N02。於本實施例之另一較佳 範例中,上述之基本金屬電極係為銀金屬。 於本貫施例中,上述之可調整功函數之金屬電極的形成方法 包含:(1)於一鈉玻璃(soda glass)上取約〇·625平方公釐之面積, 利用光罩技術在前述面積中刻缘出所需電極線路圖樣,並接著熱 条鍍-層厚約⑽奈米之銀金屬;以及⑵將上述之銀金屬基材 d至濃度約為1福的電極修飾溶液巾,浸鱗騎兩小時。 .上述電極修飾溶液之溶劑可以是—有機溶劑,例如乙醇、異丙醇、 、正己絲是其他習知_賴者所熟知_性麟極性之有機溶 劑。上述電極修飾溶賴溶質包含具有本實關所赫g1_r_G2 結構之化合物。於本實施例之1佳範射,上述之溶質具有如 下結構: 12a compound of Gi-R-G2, wherein the G1 is SH, and the R is selected from one or a combination of the following groups: a linear alkyl group, a branched alkyl group or a cyclic alkyl group; a linear alkyl group, a branched alkyl group or a ring selected from an alkenyl group, an alkynyl group, a dentyl group, an alkoxy group, a decyloxy group, a keto group, an alcohol group, a thiol group, an amino oxime ester or an amine group. An alkyl group; an aromatic group, a heterocyclic group, a multiple melting ring, a multiple melting heterocyclic ring, and a heterocyclic ring, and G2 • is a la-electron group. In a preferred embodiment of the present embodiment, the G2 is selected from the group consisting of CN, F, α, ΒΓ, cfh2, CF2H, CF3, CC1H2, CC12H, CCl3, CBrH2, CBr2H, CB[3, NO , N02. In another preferred embodiment of the embodiment, the basic metal electrode is silver metal. In the present embodiment, the method for forming the metal electrode of the adjustable work function comprises: (1) taking an area of about 625 square millimeters on a soda glass, using the mask technology in the foregoing The desired electrode line pattern is engraved in the area, and then the hot strip is plated with a layer of silver metal having a thickness of about (10) nanometers; and (2) the silver metal substrate d is added to an electrode modified solution towel having a concentration of about 1 liter. Scale riding for two hours. The solvent of the above electrode modification solution may be an organic solvent such as ethanol, isopropyl alcohol, or hexanyl is an organic solvent which is well known in the art. The above electrode-modified solubilized solute comprises a compound having the structure of the g1_r_G2 of the present invention. In the first embodiment of the present embodiment, the above solute has the following structure: 12

X X200835015X X200835015

X = -CN CN-SAM -CF3 CF3-SAM -H Ph-SAM -OMe OMe-SAM 本發明之第三實施例揭露一種具有可調整功函數之金屬電極 的上舍光型小分子有機發光二極體(T〇p_emitting 〇rgan|e Light-emitting Diode, TEOLED)。參閱第二圖,其係為根據本實施 例之TEOLED元件構造示意圖。如圖所示,前述TE〇LED之結構 由下而上依序包含第一電極250,電洞注入層24〇,電洞傳輸層 230,電子傳輸層220,第二電極210。 上述之第一電極25〇可以是TEOLED之陽極(anode),且第一 %極250係一可整调功函數之金屬電極。第一電極mo包含一自 組裝單層膜位於第一電極250之一侧,未顯示於圖示中。上述之 自組裝單層膜包含一種化學結構一般式為gLr_g2之化合物,其 中,G1係SH,R係選自下列族群中之—者或其組合:直鍊烧基、、 支鍊燒基或環狀絲;含有任-經由-個或多個選自稀基、快基 取代之直鍊烧基、支鍊烧基或環狀烧基;芳香族團基、雜環團基、 多重融環、以及多重融_,G2係為-拉電子團基。於本實施例 之一較佳範例中,上述之G2係選自下列族群:⑶、f、α、价、 13 200835015 cfh2、cf2h、cf3、ccih2、cci2h、ca3、CBrH2 錢2H、咖 NO、N〇2。於本實施例之一較佳範例中,上述之第一電極25〇係 為銀電極。上述之TEOLED結構可以更包含一基板26〇位於第一 250下方。上述之基板260之材質可以是玻璃、聚合纖維、 , 或是其他習知0LED技術者所熟知的基板材質。 - 上述電動注入層240之組成包含 4,4,,4,,-tris(3-methylphenylphenylamin〇)triphenylamine • (m_MTDATA)’或是其他具電洞注入特性之材質。電洞傳輪層23〇 之組成包含 α-naphthylphenylbiplieiiyl diamine (NpB),或是其他具 電洞傳輸特性之材質。電子傳輸層22〇之組成包含 tri“8_hydn>xyqUindine) alumimim (Alq),或是其他具電子傳輸特 性之材質。在根據本實施例之一範例中,上 同時亦為一之發光層。上述之第二電極I : TEOLED之陰極(cathode),且係、為一透明電極。在根據本實施例 _之-範例中’餐照第二圖,上述第二電極21〇可以是由W層216、 - 則214、與々層犯所組成之結合結構。需特別說明的是,於 上述結射’陽極、陰極與發光層係騎機發光二極體的必要構 件’而電洞注人層與電洞傳輪層等係為提升⑽d元件發光效率 的常用技術’其目的僅係為最佳化本範例所提供之獅[ED,並 非必要構件此外,上遂第一電極、電洞注入層、電洞傳輸層、 電子傳輸層、與第二電極之材質敘述僅為說明本實施例較佳施行 14 200835015 方式,本說明書之範圍應以申請專利範圍為準,而不應以前列敘 述為限。 參閱下圖所示,其係為根據本發明之一較佳範例所建構之 TEOLED元件的I-V曲線圖以及與其他各對照組的比較結果。X = -CN CN-SAM -CF3 CF3-SAM -H Ph-SAM -OMe OMe-SAM A third embodiment of the present invention discloses a top-lighting type small molecule organic light-emitting diode having a metal electrode with an adjustable work function. Body (T〇p_emitting 〇rgan|e Light-emitting Diode, TEOLED). Referring to the second figure, it is a schematic diagram of the construction of a TEOLED element according to the present embodiment. As shown in the figure, the structure of the TE〇LED includes the first electrode 250, the hole injection layer 24, the hole transport layer 230, the electron transport layer 220, and the second electrode 210 in this order from bottom to top. The first electrode 25A described above may be an anode of the TEOLED, and the first % electrode 250 is a metal electrode capable of adjusting the work function. The first electrode mo comprises a self-assembled monolayer film on one side of the first electrode 250, not shown in the drawing. The above self-assembled monolayer film comprises a compound having a chemical structure of the general formula gLr_g2, wherein the G1 group SH, the R group is selected from the group consisting of: or a combination thereof: a linear alkyl group, a branched alkyl group or a ring a filament; containing a linear alkyl group, a branched alkyl group or a cyclic alkyl group substituted with one or more selected from a dilute group or a fast group; an aromatic group, a heterocyclic group, a multiple melting ring, And multiple melting _, G2 is a - pull electron group. In a preferred embodiment of the present embodiment, the G2 is selected from the group consisting of: (3), f, α, valence, 13 200835015 cfh2, cf2h, cf3, ccih2, cci2h, ca3, CBrH2, money 2H, coffee NO, N 〇 2. In a preferred embodiment of the embodiment, the first electrode 25 is a silver electrode. The TEOLED structure described above may further include a substrate 26 located below the first 250. The material of the substrate 260 may be glass, polymer fiber, or other substrate materials well known to those skilled in the art. - The composition of the above-described electric injection layer 240 includes 4,4,,4,,-tris(3-methylphenylphenylamin〇)triphenylamine • (m_MTDATA)' or other material having a hole injection property. The composition of the hole-passing layer 23〇 consists of α-naphthylphenylbiplieiiyl diamine (NpB) or other material with hole transport properties. The composition of the electron transport layer 22 includes tri "8_hydn" xyqUindine) alumimim (Alq), or other material having electron transport characteristics. In an example according to this embodiment, the upper layer is also a light-emitting layer. a second electrode I: a cathode of the TEOLED, and is a transparent electrode. In the second embodiment of the meal according to the embodiment of the present embodiment, the second electrode 21A may be a W layer 216, - Then 214, combined with the structure of the smashing layer. It is necessary to specify that the above-mentioned junction 'anode, cathode and luminescent layer are necessary components of the riding light-emitting diode' and the hole injection layer and electricity The hole-passing layer is a common technique for improving the luminous efficiency of (10)d components. The purpose is only to optimize the lion provided in this example [ED, not necessary components, in addition, the upper electrode, the hole injection layer, the electricity The description of the material of the hole transport layer, the electron transport layer, and the second electrode is only for the description of the preferred embodiment of the present invention. The method of the present invention is based on the scope of the patent application, and should not be limited to the foregoing description. As shown in the figure below, It is an I-V graph of a TEOLED element constructed in accordance with a preferred embodiment of the present invention and comparison results with other control groups.

於此範例中,本發明所提供之TEOLED係採用銀金屬上覆接 有拉電子取代基CN以及CF3的自組裝單層膜(於上圖中分別標示 • 為CN_SAM/Ag及CFrSAM/Ag)作為陽極。此外,如圖所示,作 ^ 為比較之用的其他各對照組包含單純之銀金屬(於上圖中之標示為In this example, the TEOLED provided by the present invention uses a self-assembled monolayer film with silver metal and CN3 overlying the silver metal (indicated in the above figure, CN_SAM/Ag and CFrSAM/Ag, respectively). anode. In addition, as shown in the figure, the other control groups used for comparison contain pure silver metal (marked in the above figure as

Ag)、銀金屬上覆Ag2〇(於上圖中之標示為Ag2〇/Ag)、銀金屬上覆 未接有取代基的自組裝單層膜(圖中標示為ph-SAM)、銀金屬上覆 接有推電子取代基OMe的自組裝單層膜(於上圖中之標示為 OMe-SAM/Ag),以及-組以肋透㈣極為陽極的傳統下發光式 小分子有機發光二極體(B〇tt〇m-emitting 15 200835015Ag), silver metal overlying Ag2〇 (labeled as Ag2〇/Ag in the figure above), silver metal overlying self-assembled monolayer film without substituents (labeled as ph-SAM), silver metal A self-assembled monolayer film with a push-electron substituent OMe (labeled as OMe-SAM/Ag in the above figure), and a group of conventional lower-emitting small-molecule organic light-emitting diodes with a ribbed (four) extremely anode Body (B〇tt〇m-emitting 15 200835015

Diode,BEOLED)(於上圖中之標示為uo)。量測結果顯示,在相 同之偏壓下,在銀電極上覆接有拉電子取代基CN自組裝單層膜 以及在銀電極上覆接有拉電子取代基CF3自組裝單層膜之 TEOLED確實可達到較其他各對照組元件為高的電流密度。唯一 例外者係為在銀電極上覆Α&〇之對照組。然而,由於銀電極上覆 之Age層將會降低銀金屬的反射率,故在作為^之陽極 ^應用上有錢關。再者,A故本身的物理性質對於光與熱相 :不穩疋。相較之下,根據本說明書之設計,由於自組裝單層膜 二=牛低銀包極之反射率,所以,根據本說明書之設計,不僅 改^^之功函數,且可具有更廣的工業應用價值。 私 下_所7F ’其係為制上述各相同實驗與對照組元件的 Ά政率所得之味結果。 1¾ οDiode, BEOLED) (marked uo in the figure above). The measurement results show that under the same bias voltage, the self-assembled monolayer film with the electron-withdrawing CN on the silver electrode and the self-assembled monolayer film with the pull-electron substituent CF3 on the silver electrode are indeed A higher current density than other control components can be achieved. The only exception was the control group covering the & 〇 on the silver electrode. However, since the Ag layer overlying the silver electrode will reduce the reflectivity of the silver metal, there is a trade in the application of the anode. Moreover, the physical properties of A itself are not stable for light and heat: In contrast, according to the design of the present specification, since the self-assembled single-layer film has a reflectivity of the low-silver package, the design according to the present specification not only changes the work function but also has a wider range. Industrial application value. Privately, 7F' is the result of the pledge rate of the above-mentioned identical experimental and control components. 13⁄4 ο

16 200835015 由圖中可清楚看出在銀電極上覆接有拉電子取代基⑶自組 裝單層膜以及麵電極上雛妹電子取储CF3自組裝單層膜 之實驗組以及在銀電極上覆Ag2〇)謂驗具有遠高於其他各對 照㈣元件之發光效率,包括傳統技術的下發光式〇咖。铁而 如前所述,由於在銀金屬上覆Α&0後將會影響其反射率,再加上 本身對於光越的不穩定性,因此將會限制了其作為 TEOLED不透明陽極的應用性。16 200835015 It can be clearly seen from the figure that the silver electrode is covered with a pull-electron substituent (3) self-assembled monolayer film and the experimental group of the CF3 self-assembled monolayer film on the surface electrode and the silver electrode is overlaid on the silver electrode. The Ag2〇) test has a luminous efficiency that is much higher than that of the other control (4) components, including the lower-emitting enamel of the conventional technology. Iron As mentioned above, the effect of 作为 & 0 on silver metal will affect its reflectivity, coupled with its inherent instability to light, thus limiting its applicability as a TEOLED opaque anode.

厂’^、、、地’依知上面體系中的描述,本發明可能有許多的修正 兵差兴^此需要在其附加_利要求項之翻内加以理解,除 —上的#料,本發明還可以廣泛地在其他的體系中施 IS::未脫離本發明 艾成軸5 ’均應包含在下述申請專利範圍内。The factory '^, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The invention can also be widely applied to IS in other systems: it is intended to be included in the scope of the following claims without departing from the invention.

17 200835015 【圖式簡單說明】 第一圖係一習知之OLED元件構造示意圖;以及 第二圖係一根據本說明書之TEOLED的元件構造示意圖。 【主要元件符號說明】 100 OLED元件 110 陰極 120 電子傳導層 130 有機發光層 140 載子注入層 150 陽極 160 基板 200 TEOLED元件 210 第二電極 212 Ag層 214 A1層 216 LiF層 220 電子傳輸層 230 電洞傳輸層 240 電洞注入層 250 第一電極 260 基板 1817 200835015 [Simplified description of the drawings] The first figure is a schematic diagram of a conventional OLED element structure; and the second figure is a schematic diagram of the element structure of the TEOLED according to the present specification. [Main component symbol description] 100 OLED element 110 cathode 120 electron conduction layer 130 organic light-emitting layer 140 carrier injection layer 150 anode 160 substrate 200 TEOLED element 210 second electrode 212 Ag layer 214 A1 layer 216 LiF layer 220 electron transport layer 230 Hole transport layer 240 hole injection layer 250 first electrode 260 substrate 18

Claims (1)

200835015 十、申請專利範圍: 1· 一種用以調整金屬電極之功函數(work function)的自組裝單層 膜(self-assembled m〇nolayer; Sam),該用以調整金屬電極之功 函數的自組裝單層膜包含一一般式為G^R-G2之化合物,其 中,G1係SH ; R係選自下列族群中之一者或其組合:直 鍊烷基、支鍊烷基或環狀烷基,含有任一經由一個或多 個运自浠基、炔基取代之直鍊烧基、支鍊烧基或環狀烧 基,芳香族團基、雜環團基、多重融環、多重融雜環; G 係為一拉電子團基⑻ectr〇n-wjthdrawing group)。 2·根據申請專利範圍第1項之用以調整金屬電極之功函數的自組 裝單層膜’其中上述之G2係選自下列族群中之一者:cn、 F、Cl、Br、CFH2、CF2H、CF3、CC1H2、CC12H、CC13、 CBrH2、CBr2H、CBt3、NO、N〇2。 3· —種可調整功函數之金屬電極,包含·· 一金屬電極;以及 一自組裝單層膜(self-assembled monolayer; SAM)位於該金屬 電極之一侧’其中該自組裝單層膜包含——般式為d-R-G2 之化合物,其中,Gi係SH ; R係選自下列族群中之一者 或其組合:直鍊烷基、支鍊烷基或環狀烷基,含有任 一經由一個或多個選自烯基、炔基取代之直鍊烷基、 支鍊烧基或環狀烷基,芳香族團基、雜環團基、多重 200835015 融環、多重融雜環;G2係為一拉電子團基 (electron-withdrawing group)。 4·根據申請專利範圍第3項之可調整功函數金屬電極,其中上述 之G2係選自下列族群中之一者:cn、F、C卜Br、CFH2、 CF2H、CF3、CC1H2、CC12H、CC13、CBrH2、CBr2H、CBr3、 NO、N02 〇 5·根據申請專利範圍第3項之可調整功函數金屬電極,其中上述 之金屬電極係一銀電極。 6. —種具有可調整功函數金屬電極的上發光型有機發光二極體 (Top emission light emitting diodes; TEOLED),包含: 一金屬陽極(anode); 一自組裝單層膜(self-assembled monolayer; SAM)位於該金屬 陽極之一側,其中該自組裝單層膜包含一一般式為Gi_R<}2 • 之化合物,其中,G1係SH ; R係選自下列族群中之一者 或其組合:直鍊烷基、支鍊烷基或環狀烷基,含有任 一經由一個或多個選自烯基、炔基取代之直鍊烷基、 支鍊烷基或環狀烷基,芳香族團基、雜環團基、多重 融ί衣、多重融雜環;G2係一拉電子團美 (electron-withdrawing group); 一有機發光層,該有機發光層係位於該自組裝單層膜之 上;以及 20 200835015 一金屬陰極(cathode)’該金屬陰極係位於該有機發光層 之上。 7·根據中請專利範圍第6項之具有可調整功函數金屬電極之上發 光型有機發光二極體,其中上述之G2係選自下列族群中之 -者:CN、F、C卜 Br、CFH2、CF2H、%、ccm2 卿 ♦ CC13、CBrH2、CBr2H、CBr3、NO、N02 〇 8.根據申請專利範圍第6項之具有可調整功函數金屬電極之上發 •.光型有機發光二極體,更包含一電子傳輸層(electrontransport layer; ETL) 〇 9·根據申請專利範圍第8項之具有可調整功函數金屬電極之上發 光型有機發光二極體,其中上述電子傳輸層之材質包含Alq3 [tris-(8-hydroxyquinoline) aluminum] ° 10·根據申請專利範圍第6項之具有可調整功函數金屬電極之上 發光型有機發光二極體,更包含一電洞傳輸層(h〇le transp〇rt 響 layer; HTL) ° • η·根據申請專利範圍第ίο項之具有可調整功函數金屬電極之上 發光型有機發光二極體,其中上述電洞傳輪層之材質包含 α-NPD (a-naphthylphenylbiphenyl diamine) ° 12·根據申請專利範圍第6項之具有可調整功函數金屬電極之上 發光型有機發光二極體,更包含一電洞注入層(hole injection layer; HTL) ° 21 200835015 13·根據申請專利範圍弟12項之具有可調整功函數金屬電極之上 發光型有機發光二極體,其中上述電洞注入層之材質係選自下 m-MTDADA 列 族群之 一 者 [4?4%45^tris(3-meth^ triphenylamine)] > QiPc (copper phthalocyanine) ° 14. 根據申請專利範圍第6項之具有可調整功函數金屬電極之上 發光型有機發光二極體,其中上述之金屬陽電極係一銀電極。200835015 X. Patent application scope: 1. A self-assembled m〇nolayer (Sam) for adjusting the work function of a metal electrode, which is used to adjust the work function of the metal electrode. The assembled monolayer film comprises a compound of the general formula G^R-G2 wherein G1 is SH; R is selected from one or a combination of the following groups: linear alkyl, branched alkyl or cyclic alkane a group comprising any one of a linear alkyl group, a branched alkyl group or a cyclic alkyl group substituted with a fluorenyl group or an alkynyl group, an aromatic group, a heterocyclic group, a multiple melting ring, a multiple melting group Heterocycle; G is an electron group (8) ectr〇n-wjthdrawing group). 2. A self-assembled monolayer film for adjusting the work function of a metal electrode according to item 1 of the scope of the patent application, wherein the G2 system described above is selected from one of the following groups: cn, F, Cl, Br, CFH2, CF2H , CF3, CC1H2, CC12H, CC13, CBrH2, CBr2H, CBt3, NO, N〇2. 3. A metal electrode capable of adjusting a work function, comprising: a metal electrode; and a self-assembled monolayer (SAM) on one side of the metal electrode, wherein the self-assembled monolayer film comprises a compound of the formula dR-G2 wherein the Gi is SH; and the R is selected from one of the following groups or a combination thereof: a linear alkyl group, a branched alkyl group or a cyclic alkyl group, which contains either One or more selected from the group consisting of an alkenyl group, an alkynyl-substituted linear alkyl group, a branched alkyl group or a cyclic alkyl group, an aromatic group, a heterocyclic group, a multiple 200835015 melting ring, a multiple melting heterocyclic ring; a G2 system It is an electron-withdrawing group. 4. The work function metal electrode according to item 3 of the patent application scope, wherein the G2 is selected from one of the following groups: cn, F, C, Br, CFH2, CF2H, CF3, CC1H2, CC12H, CC13 , CBrH2, CBr2H, CBr3, NO, N02 〇5. The work function metal electrode according to item 3 of the patent application scope, wherein the metal electrode is a silver electrode. 6. A top emission light emitting diode (TEOLED) having an adjustable work function metal electrode, comprising: a metal anode; a self-assembled monolayer And a combination of the following ones of the following groups: a linear alkyl group, a branched alkyl group or a cyclic alkyl group, which contains any one of a straight-chain alkyl group, a branched alkyl group or a cyclic alkyl group substituted by an alkenyl group or an alkynyl group, aromatic a group, a heterocyclic group, a multiple melting, a multiple melting heterocyclic ring; a G2-series electron-withdrawing group; an organic light-emitting layer, the organic light-emitting layer is located in the self-assembled monolayer film And 20 200835015 a metal cathode 'the metal cathode system is located above the organic light-emitting layer. 7. The luminescent organic light-emitting diode having an adjustable work function metal electrode according to item 6 of the patent application scope, wherein the G2 system is selected from the group consisting of: CN, F, C, Br, CFH2, CF2H, %, ccm2 qing ♦ CC13, CBrH2, CBr2H, CBr3, NO, N02 〇8. According to the scope of claim 6th, the metal function of the metal electrode with adjustable work function is provided. Further comprising an electron transport layer (ETL) 〇9. The light-emitting organic light-emitting diode having an adjustable work function metal electrode according to claim 8 of the patent application scope, wherein the material of the electron transport layer comprises Alq3 [tris-(8-hydroxyquinoline) aluminum] ° 10. The light-emitting organic light-emitting diode with an adjustable work function metal electrode according to item 6 of the patent application scope, further comprising a hole transport layer (h〇le transp 〇 rt layer ; H H H H H H H H H H H H H H H H H H H H H H H H 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据(a-naphthylphenylbiphenyl diamine) ° 12. The luminescent organic light-emitting diode having an adjustable work function metal electrode according to the scope of claim 6 further includes a hole injection layer (HTL) ° 21 200835015 13· According to the patent application scope 12, the illuminating organic light-emitting diode having an adjustable work function metal electrode, wherein the material of the hole injection layer is selected from one of the lower m-MTDADA column groups [4] ?4%45^tris(3-meth^ triphenylamine)] > QiPc (copper phthalocyanine) ° 14. The light-emitting organic light-emitting diode having an adjustable work function metal electrode according to the scope of claim 6 The metal anode electrode described above is a silver electrode. 15. 根射請翻細第6奴财可功錄金屬電極之上 發光型有機發光二極體,其中上述之金屬陰電極係選自下列材 質之一者或其組合所形成之一透明電極:UF、A1、Ag。 2215. The root shot please refine the 6th slave money to record the metal-emitting electrode above the light-emitting organic light-emitting diode, wherein the metal cathode electrode is selected from one of the following materials or a combination thereof to form a transparent electrode: UF, A1, Ag. twenty two
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469434B (en) * 2011-12-23 2015-01-11 Univ Nat Taiwan Science Tech Method for making carbon nanotube-loaded electrode, carbon nanotube-loaded electrode made by the method, and applications thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469434B (en) * 2011-12-23 2015-01-11 Univ Nat Taiwan Science Tech Method for making carbon nanotube-loaded electrode, carbon nanotube-loaded electrode made by the method, and applications thereof

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