TW200834427A - Storage medium with stackable component structure - Google Patents

Storage medium with stackable component structure Download PDF

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Publication number
TW200834427A
TW200834427A TW96105286A TW96105286A TW200834427A TW 200834427 A TW200834427 A TW 200834427A TW 96105286 A TW96105286 A TW 96105286A TW 96105286 A TW96105286 A TW 96105286A TW 200834427 A TW200834427 A TW 200834427A
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Taiwan
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memory
carrier
circuit
electrically connected
conductive contact
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TW96105286A
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Chinese (zh)
Inventor
Yu-Nung Shen
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Yu-Nung Shen
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Priority to TW96105286A priority Critical patent/TW200834427A/en
Publication of TW200834427A publication Critical patent/TW200834427A/en

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Abstract

A storage medium with a stackable component structure is disclosed, which comprises: a carrier having a first surface and a second surface opposite to the first surface; a control integrated circuit installed on the first surface of the carrier, wherein the control integrated circuit is arranged such that the conductive contact thereof is electronically connected to a corresponding circuit track on the first surface; a first memory installed on the first surface of the carrier, wherein the first memory is arranged such that its conductive contact is electronically connected to a corresponding circuit track on the first surface; a second memory partially superimposed on the first memory so as to keep the conductive contact thereof from being covered by the first memory, wherein the conductive contact of the second memory is electronically connected to a corresponding circuit track on the first surface; and a case covering the carrier, the control integrated circuit and the memories, wherein the case has a plurality of through holes used for being exposed to a corresponding circuit track of the second surface.

Description

200834427 九、發明說明: c發明所屬技領域]1 發明領域 本發明係有關於一種具有堆疊式元件結構的儲存媒 5 體。 發明背景 近年來,像MMC、SD、MINI-MMC、MINI-SD等等般 之記憶卡的需求隨著數位相機、數位攝影機、手機及MP3 10 等等般之消費性產品的熱銷而持續增加。這些記憶卡具有 相似的結構,如在第二十和二十一圖中所示,一種習知的 SD記憶卡是被舉例作說明。 請參閱第二十和二十一圖所示,該SD記憶卡具有一個 作為下蓋體的印刷電路板11、一個記憶體12、一個控制積 15 體電路13、數個用於與外部電路(圖中未示)電氣連接的外部 連接電極14、及一個上蓋體1〇。 該印刷電路板11具有一個元件安裝表面11〇、一個與該 元件安裝表面110相對的背面111、及佈設於該元件安裝表 面110上之預定的電路軌跡圖案(圖中未示)。 20 該記憶體12是以,例如,覆晶方式安裝於該印刷電路 板11的元件安裝表面11〇上以致於其之導電觸點(圖中未示) 是與在該印刷電路板11之元件安裝表面11〇上之對應的電 路軌跡圖案電氣連接。 該控制積體電路13是以,例如,覆晶方式安裝於該印 200834427 刷電路板11的元件安裝表面110上以致於其之導電觸點(圖 中未示)是與在該印刷電路板13[之元件安裝表面11〇上之對 應的電路軌跡圖案電氣連接。 - 該等俗稱金手指的外部連接電極14是設置於該印刷電 、 5路板11的背面111上而且是透過習知適當的方式來與在該 印刷電路板11之元件安裝表面11〇上之對應的電路軌跡圖 案電氣連接。 % 該上蓋體10具有一個舆該印刷電路板11匹配的形狀而 且是以適當的方式來與該印刷電路板^結合。 10 然而,以上所述之記憶卡具有的缺點為: 該印刷電路板11的面積在記憶卡允許的尺寸下通常是 會被設計成能夠容納兩顆記憶體12,見第二十圖中之印刷 電路板11的虛線區域,以致於記憶卡製造商能夠端視所需 谷里而疋在該電路板11上安裝一顆或兩顆記憶體。然 15而,隨著記憶卡的尺寸越來越小,電路板11的面積已無法 • 容納兩顆並排設置的記紐12,故無法依需求擴充容量。 有鑑於此,本案發明人遂以其從事該行業之多年經 ' 驗,並本著精益求精之精神,積極研究改良,遂有本發明 、 『一種具有堆疊式元件結構的儲存媒體』產生。 20 【發明内容】 發明概要 本發明之目的是為提供一種具有堆疊式記憶體的儲存 媒體。 根據本發明之一特徵,-種具有堆疊式元件結構的儲存媒 200834427 體是被提供,該儲存媒體包含:一個載體,該載體具有一個第 一表面和一個與該第一表面相對的第二表面,於該第一表面和 該第二表面上是分別形成有預定的電路軌跡,在該第一表面上 的電路執跡與在該第二表面上之對應的電路執跡是彼此電氣 5 連接;一個安裝在該載體之第一表面上的控制積體電路,該控 制積體電路是被配置以致於其之導電觸點是與在該第一表面 上之對應的電路執跡電氣連接;一個安裝在該載體之第一表面 上的第一記憶體,該第一記憶體是被配置以致於其之導電觸點 是與在該第一表面上之對應的電路軌跡電氣連接;一個部份地 10 疊置在該第一記憶體上以致於其之導電觸點未由該第一記憶 體覆蓋的第二記憶體,該第二記憶體的導電觸點是與該第一表 面上之對應的電路執跡電氣連接;及一個包覆該載體、該控制 積體電路與該等記憶體的外殼,該外殼形成有數個用於曝露在 該載體之第二表面上之對應之電路軌跡的貫孔。 15 根據本發明之另一特徵,一種具有堆疊式元件結構的 儲存媒體是被提供,該儲存媒體包含:一個載體,該載體 具有一個第一表面、一個與該第一表面相對的第二表面、 和一個貫穿該載體的貫孔,於該第一表面和該第二表面上 是分別形成有預定的電路執跡,在該第一表面上的電路軌 20 跡與在該第二表面上之對應的電路軌跡是彼此電氣連接; 一個形成於該載體之第一表面上以致於其之形成有導電觸 點之表面是可經由該貫孔進出的記憶體,該記憶體的導電 觸點是與在該載體之第一表面上之對應的電路軌跡電氣連 接,在該記憶體之形成有導電觸點的表面上是形成有預定 200834427 的電路軌跡—個安裝於該記憶體之形财導電觸點之表 面上以致於是位在該貫孔之内的控制積體電路,該控制積 體電路是與在該記憶體之形成有導電觸點之表面上的電路 執跡電氣連接,及-個包覆該載體、該控制積體電路與該 5記憶體的外殼,該外殼形成有數個用於曝露在該載體之第 二表面上之對應之電路軌跡的貫孔。 低料㈣之又力.…辦㈣㈣元件結:200834427 IX. Description of the Invention: Field of the Invention The present invention relates to a storage medium body having a stacked element structure. BACKGROUND OF THE INVENTION In recent years, the demand for memory cards such as MMC, SD, MINI-MMC, MINI-SD, etc. has continued to increase with the popularity of consumer products such as digital cameras, digital cameras, mobile phones, and MP3 10 . These memory cards have a similar structure, as shown in the twentieth and twenty-first figures, a conventional SD memory card is exemplified. Referring to the twentieth and twenty-first figures, the SD memory card has a printed circuit board 11 as a lower cover, a memory 12, a control integrated circuit 13, and a plurality of circuits for external use ( The external connection electrode 14 and the upper cover 1 are electrically connected. The printed circuit board 11 has a component mounting surface 11A, a back surface 111 opposite the component mounting surface 110, and a predetermined circuit trace pattern (not shown) disposed on the component mounting surface 110. The memory 12 is mounted on the component mounting surface 11A of the printed circuit board 11 by, for example, flip chip so that its conductive contacts (not shown) are the components on the printed circuit board 11. The corresponding circuit trace pattern on the mounting surface 11 is electrically connected. The control integrated circuit 13 is mounted on the component mounting surface 110 of the printed circuit board 11 of, for example, flip chip so that its conductive contacts (not shown) are on the printed circuit board 13 [The corresponding circuit trace pattern on the component mounting surface 11 is electrically connected. - the external connection electrodes 14 commonly referred to as gold fingers are disposed on the back surface 111 of the printed circuit, the 5-way board 11 and are disposed on the component mounting surface 11 of the printed circuit board 11 in a suitable manner. Corresponding circuit trace patterns are electrically connected. The upper cover 10 has a shape matching the printed circuit board 11 and is combined with the printed circuit board in an appropriate manner. 10 However, the memory card described above has the disadvantage that the area of the printed circuit board 11 is usually designed to accommodate two memory 12s in the size allowed by the memory card, see printing in the twenty-first figure. The dashed area of the board 11 is such that the memory card manufacturer can view the desired valley and install one or two memories on the board 11. However, as the size of the memory card becomes smaller and smaller, the area of the circuit board 11 cannot be accommodated. • Two counts 12 are arranged side by side, so the capacity cannot be expanded as needed. In view of this, the inventor of this case has been actively researching and improving with the spirit of excellence in the industry for many years of experience in the industry, and has produced the invention and a storage medium with a stacked component structure. 20 SUMMARY OF THE INVENTION An object of the present invention is to provide a storage medium having stacked memories. According to a feature of the invention, a storage medium 200834427 having a stacked component structure is provided, the storage medium comprising: a carrier having a first surface and a second surface opposite the first surface Forming, on the first surface and the second surface, predetermined circuit traces respectively, the circuit traces on the first surface and the corresponding circuit traces on the second surface being electrically 5 connected to each other; a control integrated circuit mounted on the first surface of the carrier, the control integrated circuit being configured such that its conductive contacts are electrically connected to corresponding circuit traces on the first surface; a first memory on a first surface of the carrier, the first memory being configured such that a conductive contact thereof is electrically connected to a corresponding circuit trace on the first surface; a portion 10 a second memory stacked on the first memory such that the conductive contacts thereof are not covered by the first memory, and the conductive contacts of the second memory are corresponding to the first surface Circuitry electrical connection; and a housing encasing the carrier, the control integrated circuit and the memory, the housing being formed with a plurality of through holes for corresponding circuit traces exposed on the second surface of the carrier . According to another feature of the invention, a storage medium having a stacked component structure is provided, the storage medium comprising: a carrier having a first surface, a second surface opposite the first surface, And a through hole penetrating the carrier, wherein the first surface and the second surface are respectively formed with predetermined circuit traces, and the track of the circuit track 20 on the first surface corresponds to the second surface The circuit traces are electrically connected to each other; a surface formed on the first surface of the carrier such that the surface on which the conductive contact is formed is a memory accessible through the through hole, and the conductive contact of the memory is Corresponding circuit traces on the first surface of the carrier are electrically connected. On the surface of the memory formed with the conductive contacts, a circuit trace of a predetermined 200834427 is formed, which is a shaped conductive contact mounted on the memory. a surface of the control integrated circuit located within the through hole, the control integrated circuit being a circuit trace on a surface of the memory formed with a conductive contact Air connections, and - a coating of the carrier, the control housing and the integrated circuit memory 5, the through hole formed in the housing of the circuit traces for several exposed on the second surface of the carrier corresponding to the sum of. Low material (four) and force....does (four) (four) component knot:

的儲存媒體是被提供’贿存媒體包含:—個載體,該 體具有—個第一表面、一個與該第-表面相對的第二 1〇面、和-個貫穿該載體的貫孔,於該第―表面和該第二 面上是分卿成有預定的電路軌跡,在該第—表面上的 路軌跡與找第二表面上之對應㈣路軌岐彼此電氣 個安裝於該載體之第-表面上的控 控制積體電路的導電觸點是與在該載體之第一表面上 15應的電路軌跡電氣連接;—個置於該载體之貫孔内 域體,該第—記憶體具有—個形成有導電_的表面 體:裳於該第一記憶體之形成有導電觸點之表面和兮 體之第-表面上的第二記憶體,該第二記 % 致於該第二記憶體的導電觸點是*該^Μ配置. 20導電觸點和在該載體之第憶體之對應1 連接.乃“希 之對應的電路軌跡電The storage medium is provided with a 'brittle media containing: a carrier having a first surface, a second one facing the first surface, and a through hole extending through the carrier. The first surface and the second surface are divided into predetermined circuit traces, and the path traces on the first surface and the corresponding (four) rails on the second surface are electrically mounted on the carrier - The conductive contact on the surface of the control integrated circuit is electrically connected to a circuit trace on the first surface of the carrier; a via body disposed in the via of the carrier, the first memory having a surface body formed with a conductive surface: a second memory on the surface of the first memory formed with the conductive contact and the first surface of the body, the second memory being the second memory The conductive contact of the body is * this configuration. 20 conductive contacts and the corresponding 1 connection in the memory of the carrier.

連接,及-個包覆該载體、該控制積體電路與 I =:外殼形成有數個用於曝露在該载體:第= 上之對應之電路執跡的貫孔。 〜表〗 根據本發明之又再—特徵,-種具有堆疊式元件結; 200834427 * * 〇 的儲存媒體是被辦,额存媒體包含:—個載體,該載 冑具有-個第一表面、—個與該第一表面相對的第二表 面、和一個貫穿該載體的貫孔,於該第一表面和該第二表 • ©上是分卿成有就的電路執跡在該第—表面上的電 、 &amp;㈣與在4第二表面上之對應的電路獅是彼此電氣連 接;―個置於該載體之貫孔内的記憶體,該記憶體具有一 個形成有導電觸點和與對應之導電觸點電氣連接之預定之 籲 t路軌跡的表面,在該記賴之表面上的電路軌跡是經由 導體來與在該載體之第一表面上之對應的電路軌跡電氣連 1〇接;一個安裝於該記憶體之形成有導電觸點之表面上的控 制積體電路,該控制積體電路是被配置以致於該控制積體 電路的導電觸點疋與在該記憶體之表面上之對應的電路軌 跡電氣連接;及-個包覆該賴、該控制積體電路與該記 憶體的外殼’該外殼形成有數個用於曝露在該載體之第二 15表面上之對應之電路軌跡的貫孔。 • 減本發明之再—特徵,—種具有堆疊式元件結構的 儲存媒體是被提供,該儲存媒體包含:一個第一載體,該 _ 帛—載體具有—個第-表面和-個與該第-表面相對的第 •表面於該第_載體之第_表面和第二表面上是分別形 成有預疋的電路軌跡,在該第一表面上的電路軌跡與在該 第表面上之對應的電路軌跡是彼此電氣連接;一個與該 第-载體部份重叠的第二載體,該第二載體具有一個第一 I面和-個與該第—表面相對的第二表面,於該第二載體 之第-表面和第二表面上是分別形成有預定的電路軌跡, 200834427 在該第-表面上的電路軌跡與在該第二表面上之對應的電 路軌跡是彼此電氣連接,在該第二載體之第二表面上的電 路執跡是與在該第一載體之第一表面上之對應的電路執跡 • 5 k連接;-個安裝於該第-載體之第一表面上的控制積 、 _路’該㈣積體電路是被配置以致於該控制積體電路 _電觸點是與在該第-伽之第_表面上之對應的電路 ^跡電氣連接;-個安裝於該第二载體之第—表面上的第 _ —記憶體,該第-記憶體是被配置以致於該第—記憶體的 導電觸點是與在該第二載體之第一表面上之對應的電路執 跡電氣連接;-個安裝於該第二載體之第二表面上的第二 錢、體’該第二域體是被§&amp;置以致於該第二記憶體的導 電·觸點疋與在該第二載體之第二表面上之對應的電路軌跡 電氣連接,及-個包覆該等载體、該控制積體電路與該等 ^記憶體的外殼,該外殼形成有數個用於曝露在該載體之第 二表面上之對應之電路軌跡的貫孔。 鲁 根據本發明之再-特徵,_種具有堆疊式元件結構的 错存媒體是被提供,該儲存媒體包含:一個載體,該載體 - *有數個導電接腳;-個安裝於該載體上的第-記憶體, •如豸第-記憶體具有-個形成有導電觸點和與對應之導電觸 點電氣連接之電路軌跡的表面,該第―記紐是被配置以 致於該第-記憶體的導電觸點是與該載體之對應的導電接 聊電氣連接,-個安裝於該第_記憶體上的第二記憶體, 該第二記憶體具有-個形成有導電觸點和與對應之導電觸 點電氣連接之電路軌跡的表面,該第二記憶體是被配置以 200834427 致於該第二記憶體的導電觸點是與㈣, v ’ ,導電觸點魏連接;—個 4體之對應的 Γ跡之表面上的控制積體電路,該控制積體二=西t 置以致於該控制積體電路的導電觸點是與該第二 對應的電路執跡電氣連接;及—個包覆㈣ 體電路與該等記憶體的外〜控制積 &amp; 形成有數個用於曝露 在以載體之苐二表面上之對應之電路軌跡的貫孔。- 根據本發明之再另一特徵,一二 曰 /、有堆豐式元件結構 ίο 15 20 的儲存媒體讀提供,該儲存媒體包含:—個載體,該載 體具有-個第一表面和—個與該第—表面相對的第二表 面’於該載體之第-表面上是形成有預定的電路軌跡而 於該载體的第二表面上是形成有—鱗定用途界面電路和 預定的電路軌跡,在該第_表面上的電路軌跡與在該第二 表面上之對應的電路軌跡和特定用途界面電路是彼此電氣 連接;-個安裝於該載體之第—表面上的控制積體電路, 該控制積體電路是被配置以致於該控制積體電路的導電觸 點是與在該載體之第-表面上之對應的電路軌跡電氣連 接,-個安裝於該載體之第-表面上的記憶體,該記憶體 疋被配置以致於該§己憶體的導電觸點是與在該載體之第一 表面上之對應的電路軌跡電氣連接;及一個包覆該載體、 該控制積體電路與談記憶體的外殼,該外殼形成有數個用 於曝露在該載體之第二表面上之對應之電路執跡的貫孔。 根據本發明之又再一特徵,一種儲存媒體的製造方法 是被提供,該方法包含如下之步驟:於一個記憶體之導電 11 200834427 ^ - * . ^ « * 、 · 觸點安裝表面上安裝一個控制積體電路,在該記憶體的導 電觸點安裝表面上是安裝有數個導電觸點和與對應之導電 觸點電氣連接之預定的電路軌跡,該控制積體電路是被配 • 4以致於其之導電觸點是與在航㈣之表面上之對應的 ’ 5 t路獅電氣連接;㈣缝體钱於—個導線架上以致 ㈣記憶體的導電觸點是與該導線架之對應的導電接腳電 氣連接,及$成—個把該記憶體、該控制積體電路和該導 • '線架之導電接腳包覆的外殼,該外殼形成有數個用於曝露 該導線架之對應之導電接腳之一部份的貫孔。 10 圖式簡單說明 有關本發明為達上述目的、特徵所採用的技術手段及 其功效k例舉較佳實施例並配合圖式說明如下: 第-圖是為本發明之第一較佳實施例之具有堆叠式元 件結構之#t存雜的示意部份剖視圖; 15 冑二圖是為本發日狀第—較佳實關之具有堆疊式元Connecting, and - wrapping the carrier, the control integrated circuit and the I =: the outer casing is formed with a plurality of through holes for exposing the corresponding circuit traces on the carrier: the =. </ RTI> </ RTI> According to the present invention, there is a stacked component connection; 200834427 * * 储存 The storage medium is handled, and the deposit medium includes: a carrier having a first surface, a second surface opposite the first surface, and a through hole penetrating the carrier, the first surface and the second surface of the second surface are on the surface of the first surface The upper electric, & (4) and the corresponding circuit lion on the second surface of the 4 are electrically connected to each other; a memory placed in the through hole of the carrier, the memory having a conductive contact formed and Corresponding to the surface of the predetermined contact path of the conductive contact, the circuit trace on the surface of the record is electrically connected to the corresponding circuit trace on the first surface of the carrier via the conductor a control integrated circuit mounted on a surface of the memory formed with a conductive contact, the control integrated circuit being configured such that the conductive contact of the control integrated circuit is on the surface of the memory Corresponding circuit trace electrical Bonding; and - a cover that depends on the control housing of the integrated circuit and memorized body 'of the housing is formed a through hole for several circuit traces 15 exposed on the second surface of the carrier corresponding to the sum of the. • A further feature of the invention is that a storage medium having a stacked component structure is provided, the storage medium comprising: a first carrier having a first surface and a first - a surface opposite the surface of the first surface and the second surface of the first carrier are respectively formed with a pre-twisted circuit trace, a circuit trace on the first surface and a corresponding circuit on the first surface The tracks are electrically connected to each other; a second carrier partially overlapping the first carrier, the second carrier having a first I face and a second surface opposite the first surface, the second carrier The first surface and the second surface are respectively formed with predetermined circuit traces, and the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other, in the second carrier The circuit trace on the second surface is a circuit trace corresponding to the first surface of the first carrier • 5 k connection; a control product mounted on the first surface of the first carrier, _ Road 'the (four) integrated circuit is Arranged such that the control integrated circuit _ electrical contact is electrically connected to a corresponding circuit trace on the _th surface of the gamma; a _ mounted on the first surface of the second carrier a memory, the first memory being configured such that the conductive contacts of the first memory are electrically connected to circuitry corresponding to the first surface of the second carrier; a second money on the second surface of the second carrier, the body of the second domain is § &amp; such that the conductive contact 疋 of the second memory is on the second surface of the second carrier Corresponding circuit traces are electrically connected, and a casing encasing the carrier, the control integrated circuit and the memory, the casing is formed with a plurality of corresponding surfaces for exposure on the second surface of the carrier The through hole of the circuit trace. According to a re-characteristic of the present invention, a memory medium having a stacked component structure is provided, the storage medium comprising: a carrier, the carrier having a plurality of conductive pins, and a mounting on the carrier a first memory, such as a first memory having a surface formed with a conductive contact and a circuit trace electrically connected to the corresponding conductive contact, the first register being configured such that the first memory The conductive contact is electrically connected to the corresponding conductive connection of the carrier, a second memory mounted on the first memory, the second memory has a conductive contact formed and corresponding The surface of the circuit trace of the conductive contact is electrically connected, the second memory is configured to 200834427, the conductive contact of the second memory is connected with (4), v ', the conductive contact Wei; - a 4-body a control integrated circuit on the surface of the corresponding trace, the control integrated body 2 = west so that the conductive contact of the control integrated circuit is electrically connected to the second corresponding circuit trace; and - a package Overlay (four) body circuit and the outside of the memory Control product &amp; form several through hole for exposing the corresponding surface of the support of two of Ti circuitry traces. - According to still another feature of the present invention, a storage medium read and provided with a stack of component structures ίο 15 20, the storage medium comprising: a carrier having a first surface and a a second surface opposite the first surface is formed with a predetermined circuit trace on a first surface of the carrier, and a second surface of the carrier is formed with a scale interface circuit and a predetermined circuit trace a circuit trace on the first surface and a corresponding circuit trace and a special purpose interface circuit on the second surface are electrically connected to each other; a control integrated circuit mounted on the first surface of the carrier, The control integrated circuit is configured such that the conductive contacts of the control integrated circuit are electrically connected to corresponding circuit traces on the first surface of the carrier, a memory mounted on the first surface of the carrier The memory cartridge is configured such that the conductive contacts of the § memory are electrically connected to corresponding circuit traces on the first surface of the carrier; and a cladding carrier, the control integrated circuit and Memory of the housing, the housing is formed with several through hole for a corresponding exposure of the upper surface of the support of the second circuit traces is performed. According to still another feature of the present invention, a method of fabricating a storage medium is provided, the method comprising the steps of: conducting a memory in a memory 11 200834427 ^ - * . ^ « * , · mounting a contact mounting surface Controlling the integrated circuit, on the conductive contact mounting surface of the memory, a predetermined circuit trace is mounted with a plurality of conductive contacts and electrically connected to the corresponding conductive contacts, the control integrated circuit is configured to be The conductive contact is electrically connected to the corresponding '5 t road lion on the surface of the navigation (4); (4) the sewing body is on the lead frame so that (4) the conductive contact of the memory corresponds to the lead frame The conductive pin is electrically connected, and the outer casing is covered with the memory, the control integrated circuit and the conductive pin of the wire guide, and the outer casing is formed with a plurality of corresponding portions for exposing the lead frame A through hole in one of the conductive pins. 10 is a brief description of the technical means and the efficacy of the present invention for achieving the above objects and features, and a preferred embodiment is described below with reference to the following drawings: Figure 1 is a first preferred embodiment of the present invention A schematic partial cross-sectional view of a #t storage with a stacked component structure; 15 胄2 is a stacked-type element of the present invention

件結構之儲存媒體的示意底視平面圖; 第圖疋為本發明之第二較佳實施例之具有堆叠 件結構之贿賴的示意部仙視目; 元 第Η疋為本發明之第三較佳實施例之具有堆叠 20 ·件結構讀存频私意部份剖簡; 第五圖是為本發明之第四較佳實施例之具有堆 件結構之儲存媒體的示意部份剖視圖; 第六圖是為本發明之第五較佳實施例之具有堆 件結構之儲存媒體的示意部份剖視圖;A schematic bottom plan view of a storage medium of a structure; the figure is a schematic view of a bribe of a stacked structure having a stacking structure according to a second preferred embodiment of the present invention; The preferred embodiment has a stack of 20 pieces of structure read memory frequency private parts; the fifth figure is a schematic partial cross-sectional view of a storage medium having a stack structure according to a fourth preferred embodiment of the present invention; Figure 5 is a schematic partial cross-sectional view of a storage medium having a stack structure in accordance with a fifth preferred embodiment of the present invention;

12 200834427 » 〇 第七圖是為本發明之第六較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 第八圖是為本發明之第七較佳實施例之具有堆疊式元 • 件結構之儲存媒體的示意部份剖視圖; 5 苐九圖是為本發明之第八較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 第十圖是為本發明之第九較佳實施例之具有堆疊式元 φ 件結構之儲存媒體的示意部份剖視圖; 第十一圖是為本發明之第十較佳實施例之具有堆疊式 1〇元件結構之儲存媒體的示意部份剖視圖; 第十二圖是為本發明之第十較佳實施例之具有堆疊式 元件結構之儲存媒體的示意底視平面圖; 第十三圖是為一個顯示本發明之第十較佳實施例之儲 存媒體置放在一個安裝座内的示意立體圖; 弟十四和十五圖疋為顯示本發明之第十較佳實施例之 φ 儲存媒體使用於1C晶片卡上的示意平面圖; 帛十六圖是為-個顯示本發明之第十較佳實施例之館 , 存媒體使用於IC晶片卡上的另一示意平面圖; • 料七至十九®是㈣示本發明之儲存媒體之製造方 20 法的示意圖; 第一十圖疋為一個顯不習知儲存媒體的示意分解圖; 及 _第-十-圖是為-個顯示第十七圖之儲存媒體之背面 的示意平面圖。 13 200834427 【】 較佳實施例之詳細說明 _ 在後面之本發明之_實_的詳細說日种同 類似的元件是由相同的禪 512 200834427 » FIG. 7 is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to a sixth preferred embodiment of the present invention; and FIG. 8 is a stacked view showing a seventh preferred embodiment of the present invention BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9 is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to an eighth preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a schematic partial cross-sectional view of a storage medium having a stacked element structure according to a ninth preferred embodiment of the present invention; FIG. 11 is a storage of a stacked 1-inch element structure according to a tenth preferred embodiment of the present invention; A schematic partial cross-sectional view of a medium; a twelfth drawing is a schematic bottom plan view of a storage medium having a stacked component structure according to a tenth preferred embodiment of the present invention; and a thirteenth drawing showing a tenth embodiment of the present invention A schematic perspective view of the storage medium of the preferred embodiment placed in a mounting seat; and FIG. 14 and FIG. 15 are diagrams showing the φ storage medium of the tenth preferred embodiment of the present invention used in 1C crystal A schematic plan view on the card; Fig. 16 is a schematic plan view showing the tenth preferred embodiment of the present invention, the storage medium is used on the IC chip card; • The material seven to nineteen is (four) A schematic diagram showing the method of manufacturing the storage medium of the present invention; FIG. 10 is a schematic exploded view of a conventional storage medium; and _th-10th is a storage showing the seventeenth figure. A schematic plan view of the back of the media. 13 200834427 [Detailed Description of the Preferred Embodiments] _ In the following, the detailed description of the present invention is the same as that of the similar elements.

10 會被省略。Μ ⑽詳細描述將 卜’為了清楚揭示本發明的特徵,於圖 之元件並非按實際比例描繪。 請^閱亭-和二圖所示,本發明之第—較佳實施例之 具有堆璺式7G件結構的儲存媒體包含一個第一载體卜一個 第二載體2、一個控制積體電路(控制IC) 3、第一和第二圮 憶體4和5、及一個外殼6。 該第一載體1可以是印刷電路板或者導線架。在本實施 例中,該第一载體1是為印刷電路板而且具有一個佈設有預 疋之電路軌跡(圖中未示)的第一表面10和一個佈設有數値 俗稱金手指之外部連接電極110的第二表面u。在該第一表 Ϊ 5 面10上的電路軌跡是經由習知適當的方式來與在該第二表 • 面11上之對應的電極110電氣連接。 在本實施例中,該控制1C 3是以覆晶方式安裝於該第 ’ 一栽體1的第一表面10上以致於形成在該控制1C 3之導電 - 觸點安裝表面30上的導電觸點是與在該第一表面1〇上之對 2〇應的電路軌跡電氣連接。 應要注意的是’於該载體1的弟一表面ίο上,亦以與該 控制1C 3相同的方式安裝有數個像是電阻與電容般的被動 元件7。 該第二載體2可以是印刷電路板或者導線架。在本實施 14 200834427 例中,該第二載體2是為印刷電路板而且县有一個佈設有預 定之電路軌跡(圖中未示)的第一表面20和一個佈設有預定 之電路軌跡(圖中未示)的第二表面21。在該第一表面20上的 ♦ 電路軌跡是經由習知適當的方式來與在該第二表面21上之 5 對應的電路軌跡電氣連接。 在本實施例中,在該第二載體2之第二表面21上的電路 軌跡是經由導體8來與在該第一載體1之第一表面10上之對 φ 應的電路軌跡電氣連接。 在本實施例中,該第一記憶體4是以覆晶方式安裝於該 10第二載體2的第一表面20上以致於形成在該第一記憶體4之 導電觸點安裝表面40上的導電觸點41是與在該第一表面2〇 上之對應的電路軌跡電氣連接’而該第二記憶體5亦是以覆 晶方式安裝於該第二載體2的第二表面21上以致於形成在 該第二記憶體5之導電觸點安裝表面50上的導電觸點51是 15 與在該第二表面21上之對應的電路執跡電氣連接。 ^ 該外殼6是把以上所述的元件全部容置於其内並且具 有數個曝露對應之電極110的貫孔60。如是,本發明之第一 , 實施例之具有堆疊式元件結構的儲存媒體被完成。 請參閱第三圖所示’本發明之第二較佳實施例之具有 20 堆豐式s己憶體結構的儲存媒體疋被顯不包括一個載體1、一 個控制1C 3、一個記憶體4、及一個外殼6。 談載體1可以是印刷電路板或者導線架。在本實施例 中,該载體1是與第一實施例中的第一載體1相同,除了該 載體1在預定的區域形成有一個通孔12之外。 15 200834427 电 . » * 在本實施例中,該記憶體4是以覆晶方式安裝於該載體 1的第一表面10上以致於其之導電觸點安裝表面4〇是可經 由該通孔12進出及以致於其之形成在表面4〇上的導電觸點 • 41是與在該載體1之第一表面10上的之對應的電路軌跡電 5 氣連接。 該控制1C 3是以覆晶方式安裝於該記憶體4的表面4〇 上以致於該控制1C 3是位於該通孔12之内及以致於該控制 φ 1C 3之導電觸點31是與在該記憶體4之表面40上之對應的 電路轨跡電氣連接。 10 數個被動元件7亦是以與該控制1C 3相似的方式安裝 於該記憶體4的表面40上。 與第一較佳實施例相似,該外殼6是把以上所述的元件 全部容置於其内並且具有數個曝露對應之電極11〇的貫孔 60 〇 15 第四圖顯示本發明之第三較佳實施例之具有堆疊式元 φ 件結構的儲存媒體。與第二較佳實施例不同,本實施例的 儲存媒體更包括一個第二記憶體5且在本實施例中於該載 、 體1的第二表面11上更形成有與對應之電極110電氣連接之 預定的電路軌跡(圖中未示)。該第二記憶體5是以覆晶方式 20安裝於該載體1的第二表面11上以致於其之形成在導電觸 點安裝表面50上的導電觸點51是與在該載體丨之第二表面 11上的之對應的電極11〇電氣連接。應要注意的是,在本實 施例中,該第二記憶體5是被顯示相對於該載體1與該第一 記憶體4對稱地設置,然而,該第二記憶體5可以是不與該 16 200834427 * » ^ * . 第一記憶體4對稱地設置。 第五圖是為一個顯示本發明之第四較佳實施例之具有 堆璺式70件結構之儲存媒體的示意剖視圖。在本實施例 . 中’該儲存媒體包括一個載體1、一個控制IC3、第一和第 5 —^己憶體4和5、及一個外殼6。 該載體1可以是印刷電路板或者導線架。在本實施例 中,該載體1是與第二實施例中的第一載體丨相同。 φ 在本實施例中,該控制IC3和該等被動元件7是如同在 第一實施例中的那些一樣安裝於該載體〗的第一表面1〇上。 10 該第一記憶體4是置於該載體1的通孔12内而且在其之 導電觸點安裝表面40上是形成有導電觸點41和與對應之導 電觸點41電氣連接之預定的電路軌跡(圖中未示)。 • * * 該第二記憶體5是以覆晶方式安裝於該載體丨的第一表 面10和該第一 $己憶體4的導電觸點形成表面4〇上以致於該 15第二記憶體5的導電觸點51是電氣連接到在該載體丨之第一 φ 表面10上之對應的電路軌跡和在該第一記憶體4之表面40 上之對應的電路執跡。 • 第六圖是為一個顯示本發明之第五較佳實施例之具有 , 堆疊式元件結構之儲存媒體的示意部份剖視圖。與第四較 20佳實施例不同,該第二記憶體5是僅安裝在該第一記憶體4 的表面40上以致於該第二記憶體5的導電觸點51是與在該 第一記憶體4之表面40上之對應的電路軌跡電氣連接。在該 第一記憶體4之表面40上的電路軌跡是經由導體8,來與在 該載體1之表面10上之對應的電路軌跡電氣連接。 17 200834427 * · 第七圖是為一個顯示本發明之第六較佳實施例之具有 堆豐式兀件結構之儲存媒體的示意部份剖_。本實施例 的儲存媒體包括—個载體卜―個控制IC3、第-和第二記 憶體4和5、及一個外殼6。 該載體1可以是印刷電路板或者導線架。在本實施例 中,該載體1是與第—實施例中的第-載體!相同。此外, 在本實施例中,該第-記憶體4、該控制ic3和數個被動元 件7是以如上所叙覆晶料安裝純健丨㈣-表面10 上0 10 15 20 愔心該賴體5是在其之導電雜51沒該第一記 5^妓*下部份疊置在該第—記憶體4上且其之導電觸點 跡體8來與在麵1之表面1G上之對應的電路軌 部办、較佳實加例相似,該外殼6是把以上所述的元件全 心;其内並且具有數個曝露對應之電極110的貫孔60。 堆^參閱以圖所示’本發明之第七較佳實施例之具有 、-件、、々構的儲存媒體是被顯示。在本實施例中,該 體包括一個娜、一個控制IC3、第一和第二記憶 體4和5、及-個外殼6。 j栽體1可以是印刷電路板或者導線架。在本實施例 中,該载體1是為具有數個導電接腳的導線架。 “第5己憶體4是以覆晶方式經由導體8,,安裝於該載 體1的導電接腳上以致於該第一記憶體4的導電觸點41是與 對應的導電接腳電氣連接。該第-記憶體4在其之邊緣是形 18 200834427 ft &quot; ο * • * 成有數個與對應之導體8’’電氣連接的電鍍凹溝42。 該第二記憶體5是以覆晶方式經由導體8,,安裝於該第 一記憶體4上以致於該第二記憶體5的導電觸點51是與該第 一記憶體4之對應的電鍍凹溝42電氣連接。與該第一記憶體 5 4相同,該第二記憶體5在其之邊緣是形成有數個與對應之 導體8’’電氣連接的電鍍四溝52。此外,在該第二記憶體5 之與導電觸點安裝表面50相對的表面53上是形成有與對應 ^ 之電鍍凹溝52電氣連接之預定的電路軌跡(圖中未示)。 該控制1C 3和該等被動元件7是以如上所述的覆晶方 10 式安裝於該第二記憶體5的表面53上。 與第一較佳實施例相似,該外殼6是把以上所述的元件全 部容置於其内並且具有數個曝露對應之導電接腳之一部份的 貫孔60。 睛參閱第九圖所示,本發明之第八較佳實施例之具有 15堆疊式元件結構的儲存媒體是被顯示。在本實施例中,該 • 儲存媒體包括一個載體1、一個控制1C 3、——個記憶體4、 及一個外殼0〇 • 該載體1可以是印刷電路板或者導線架。在本實施例 • 中,忒载體1是為具有數個導電接腳的導線架。 20 己憶體4是如同第七實施例一樣以覆晶方式經由導 體8安裝於該载體丨的導電接腳上。在該記憶體4之與導電 ”女裝表面40相對的表面43上是形成有預定的電路執跡 (圖中未不)。在本實施例中,該載體丨的導電接腳具有一個 向上延伸俾可與在該記憶體4之表面43上之對應之電路軌 19 200834427 * ο » 跡電氣連接的倒L形延伸部。 該控制1C 3和料被動元件7是以如上所述的覆晶方 式來安裝於該記憶體4的表面43上。 • 制實施例相似,該歧6是把以上所賴聽全部 • 。、内並且具有數個曝露對應之導電接腳之-部份的貫 孔60 〇 田第十圖是為-個顯示本發明之第九較佳實施例之具有 _ 纟且式元件結構之儲存媒體的示意部份剖視圖。與第五實 施例不同’本實施例的控制扣3和被動元件7是以如上所述 1〇之覆晶方式安裝於該記憶體4的表面40上。 第十二圖是為_個顯示本發明之第十較佳實施例之具有 :Utg件結構之儲存媒體的示意平面圖丨而第十—圖是為第 十二圖之儲存媒體的示意部份剖視圖。. 如在第十-和十二圖中所示,本實施例的儲存媒體包 15括-個载體i、-個控制IC 3、第一和第二記憶體制、及 φ 一個外殼6。 該載體1可以是為印刷電路板或任何由適當材料製成 • 的板體。該載體1具有一個第一表面10和一個第二表面u。 • 在該第一表面10上是形成有預定的電路執跡(圖中未示)。一 20個第-外部連接電極U1和數個第二外部連接電極⑽是形 成在該第二表面11上而且它們是透過習知的方式來與在該 第一表面10上之對應的電路軌跡電氣連接。 在本實施例中,該第一外部連接電極lu是為一般在 SIM卡上使用的電極,而該等第二外部連接電極是為一 20 200834427 般在憶卡上使用的電極。 該控制1C 3、該等記憶體4,5和該等被動元件7是以如上 所述的覆晶方式安裝於該載體〖的第一表面1〇上。 第十二圖顯示該第十實施例之儲存媒體的使用狀態。 • 5如圖所示,該儲存媒體是被置放於一個設置在行動電話之 • 電路板單元PCB上的卡片安裝座s内。 第十四和十五圖顯示本發明之第十較佳實施例的另一 種應用。如在圖中所示,在本實施例中,該儲存媒體的第 參 一外部連接電極m是為一般在ic卡上使用的電極,而且該 1〇儲存媒體是可滑動地設置在IC卡的本體⑽致於當該儲存 媒體置於記憶體使祕置時(見料五_所朴該等第二外 部連接電極11G是適於與外部電路(财未示)電氣連接俾可 達成對該記憶體的存取運作。 第十六圖顯示本發明之第十較佳實施例的另一種應 15用。如在财所示’與第切圖的方式㈣,在本應用中, 該本體B是形成有—個通孔Bh而該儲存媒體是可樞轉地連 接在該本體B以致於該儲存媒體是可在一個記憶體使用位 • 置”自IC卡使用位置之間轉動,在該記憶體使用位置 中,該儲存媒體是與該本體B垂直,在該呀使用位置中, -20雜=媒體是與該本齡平行且置於該通孔扯内。 叫參閲第十七至十九圖所示,本發明之儲存媒體的其 中-種製造方法是被揭露。如在圖式中所示,該記憶體体 -之導電觸點安裝表面4()上是安裝有導電觸點η和佈設有 與對應之導電觸點41電氣連接之預定的電路軌跡(圖中未 21 200834427 . _示)。然後,一個控制IC3和數個被動元件7是以如上所述的 覆晶方式安裝於該記憶體4的導電觸點安裝表面4〇上以致 於它們的導電觸點(圖中未示)是與在該記憶體4之導電觸點 • 安裝表面40上之對應的電路軌跡電氣連接。 ,5 然後,該記憶體4是以如上所述的覆晶方式安裝於導線 架1上以致於該記憶體4的導電觸點41是與導線架〗之對應 的接腳電氣連接。 φ 接著,一個把以上所述的元件全部容置於其内的外殼6是 被形成。該外殼6具有數個曝露對應之導電接腳之一部份: 10 孔60。 m 综上所述,本剌之『—種具有堆疊式元件結構的館 ..存媒體』,確能藉上述所揭露之構造、裝置,達到預期之 目的與功效’且申請前未見於刊物亦未公開使用,符合發 明專利之新穎、進步等要件。 ' 15 惟,上述所揭之圖式及說明,僅為本發明之實施例而 驗已’非為限定本發明之實施例;大凡熟悉該項技藝之人仕, 其所依本發明之特徵料,所作之其他等效變化或修飾, ^ 皆應涵蓋在以下本案之申請專利範圍内。. 【圖式簡單說明】 第一圖是為本發明之第一較佳實施例之具有堆疊式元 件、°構之儲存媒體的示意部份剖視圖; 株圖是為本發明之第—較佳實施例之具有堆疊式元 千m構之儲存媒體的示意底視平面圖; *目7C為本發明之帛二較佳實施彳狀具有堆疊式元 22 200834427 » * . 备 * 件結構之儲存媒體的示意部份剖視圖; 第四圖是為本發明之第三較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; • 第五圖是為本發明之第四較佳實施例之具有堆疊式元 ' 件%構之儲存媒體的示意部份剖視圖; 第六圖是為本發明之第五較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 鲁 第七圖是為本發明之第六較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 10 ^ m 弗八圖是為本發明之第七較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 第九圖是為本發明之第八較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; 第十圖是為本發明之第九較佳實施例之具有堆疊式元 件結構之儲存媒體的示意部份剖視圖; ® 第十一圖是為本發明之第十較佳實施例之具有堆疊式 70件結構之儲存媒體的示意部份剖視圖; 第十二圖是為本發明之第十較佳實施例之具有堆疊式 , 元件結構之儲存媒體的示意底視平面圖; 2〇 第十三圖是為一個顯示本發明之第十較佳實施例之儲 存媒體置放在一個安裝座内的示意立體圖; 第十四和十五圖是為顯示本發明之第十較佳實施例之 儲存媒體使用於1C晶片卡上的示意平面圖; 第十六圖是為一個顯示本發明之第十較佳實施例之儲 23 200834427 _存媒體使用於ic晶片卡上的另一示意平面圖; 第十七至十九圖是為顯示本發明之儲存媒體之製造方 法的示意圖; 第二十圖是為一個顯示習知儲存媒體的示意分解圖; 5及 第二十一圖是為一個顯示第十七圖之儲存媒體之背面 的示意平面圖。10 will be omitted. The details of the present invention are disclosed in detail in the accompanying drawings. The storage medium having the stacked 7G structure of the first preferred embodiment of the present invention comprises a first carrier, a second carrier 2, and a control integrated circuit (shown in FIG. 2 and FIG. Control IC) 3. First and second memory bodies 4 and 5, and a housing 6. The first carrier 1 can be a printed circuit board or a lead frame. In this embodiment, the first carrier 1 is a printed circuit board and has a first surface 10 provided with a pre-twisted circuit trace (not shown) and an external connection electrode provided with a plurality of gold fingers. The second surface u of 110. The circuit traces on the first surface 10 of the first surface are electrically connected to the corresponding electrodes 110 on the second surface 11 in a suitable manner. In the present embodiment, the control 1C 3 is flip-chip mounted on the first surface 10 of the first carrier 1 so as to form a conductive contact on the conductive-contact mounting surface 30 of the control 1C 3 . The point is electrically connected to the circuit trace on the first surface 1〇. It should be noted that on the other surface ίο of the carrier 1, a plurality of passive elements 7 like resistors and capacitors are mounted in the same manner as the control 1C3. The second carrier 2 can be a printed circuit board or a lead frame. In the example of the implementation of the 2008 200834427, the second carrier 2 is a printed circuit board and the county has a first surface 20 provided with a predetermined circuit trace (not shown) and a predetermined circuit trace (in the figure). The second surface 21 is not shown. The circuit trace on the first surface 20 is electrically connected to the circuit trace corresponding to 5 on the second surface 21 in a suitable manner. In the present embodiment, the circuit trace on the second surface 21 of the second carrier 2 is electrically connected via a conductor 8 to a circuit trace corresponding to φ on the first surface 10 of the first carrier 1. In this embodiment, the first memory 4 is flip-chip mounted on the first surface 20 of the 10 second carrier 2 so as to be formed on the conductive contact mounting surface 40 of the first memory 4. The conductive contact 41 is electrically connected to a corresponding circuit trace on the first surface 2〇, and the second memory 5 is also flip-chip mounted on the second surface 21 of the second carrier 2 such that The conductive contacts 51 formed on the conductive contact mounting surface 50 of the second memory 5 are 15 electrically connected to corresponding circuit traces on the second surface 21. ^ The outer casing 6 is a through hole 60 in which all of the above-described elements are housed and has a plurality of exposed electrodes 110. As such, the storage medium having the stacked component structure of the first embodiment of the present invention is completed. Referring to the third embodiment, the storage medium having the structure of 20 stacks of the second embodiment of the present invention is not included in a carrier 1, a control 1C 3, a memory 4, And a casing 6. The carrier 1 can be a printed circuit board or a lead frame. In the present embodiment, the carrier 1 is the same as the first carrier 1 in the first embodiment except that the carrier 1 is formed with a through hole 12 in a predetermined region. 15 200834427 Electricity. » * In the present embodiment, the memory 4 is flip-chip mounted on the first surface 10 of the carrier 1 such that its conductive contact mounting surface 4 is via the through hole 12 The conductive contacts 41 that enter and exit and thus are formed on the surface 4 are electrically connected to the circuit traces corresponding to the first surface 10 of the carrier 1. The control 1C 3 is flip-chip mounted on the surface 4 of the memory 4 such that the control 1C 3 is located within the via 12 and so that the conductive contact 31 of the control φ 1C 3 is Corresponding circuit traces on the surface 40 of the memory 4 are electrically connected. A plurality of passive components 7 are also mounted on the surface 40 of the memory 4 in a manner similar to the control 1C3. Similar to the first preferred embodiment, the outer casing 6 is a through hole 60 〇 15 in which all of the above-described elements are housed and has a plurality of exposed electrodes 11 第四. The fourth figure shows the third aspect of the present invention. A storage medium having a stacked meta-component structure of the preferred embodiment. Different from the second preferred embodiment, the storage medium of the embodiment further includes a second memory 5 and is electrically formed on the second surface 11 of the carrier 1 and the corresponding electrode 110 in this embodiment. The predetermined circuit trace of the connection (not shown). The second memory 5 is mounted on the second surface 11 of the carrier 1 in a flip chip manner so that the conductive contacts 51 formed on the conductive contact mounting surface 50 are the second ones in the carrier The corresponding electrodes 11 on the surface 11 are electrically connected. It should be noted that, in this embodiment, the second memory 5 is displayed symmetrically with respect to the carrier 1 and the first memory 4, however, the second memory 5 may not be 16 200834427 * » ^ * . The first memory 4 is symmetrically set. Fig. 5 is a schematic cross-sectional view showing a storage medium having a stacked 70-piece structure showing a fourth preferred embodiment of the present invention. In the present embodiment, the storage medium includes a carrier 1, a control IC 3, first and fifth memories 4 and 5, and a casing 6. The carrier 1 can be a printed circuit board or a lead frame. In the present embodiment, the carrier 1 is the same as the first carrier 第二 in the second embodiment. φ In the present embodiment, the control IC 3 and the passive elements 7 are mounted on the first surface 1 of the carrier as in the first embodiment. The first memory 4 is disposed in the through hole 12 of the carrier 1 and is formed on the conductive contact mounting surface 40 thereof with a conductive contact 41 and a predetermined circuit electrically connected to the corresponding conductive contact 41. Track (not shown). • * * The second memory 5 is flip-chip mounted on the first surface 10 of the carrier and the conductive contact forming surface 4 of the first memory 4 such that the 15 second memory The conductive contacts 51 of 5 are electrically connected to corresponding circuit traces on the first φ surface 10 of the carrier and corresponding circuit traces on the surface 40 of the first memory 4. • Figure 6 is a schematic partial cross-sectional view showing a storage medium having a stacked component structure in accordance with a fifth preferred embodiment of the present invention. Different from the fourth preferred embodiment, the second memory 5 is mounted only on the surface 40 of the first memory 4 such that the conductive contacts 51 of the second memory 5 are in the first memory. Corresponding circuit traces on surface 40 of body 4 are electrically connected. The circuit traces on the surface 40 of the first memory 4 are electrically connected via conductors 8 to corresponding circuit traces on the surface 10 of the carrier 1. 17 200834427 * The seventh figure is a schematic partial cross-sectional view of a storage medium having a stack-up element structure showing a sixth preferred embodiment of the present invention. The storage medium of this embodiment includes a carrier, a control IC 3, first and second memory bodies 4 and 5, and a casing 6. The carrier 1 can be a printed circuit board or a lead frame. In the present embodiment, the carrier 1 is the first carrier in the first embodiment! the same. In addition, in the present embodiment, the first memory 4, the control ic3, and the plurality of passive components 7 are mounted on the wafer as described above (4) - the surface 10 is 0 10 15 20 5 is a portion of the conductive impurity 51 which is not overlapped on the first memory 5 and has a conductive contact trace 8 corresponding to the surface 1G of the surface 1 The circuit rail portion is similar to the preferred embodiment. The outer casing 6 is centered on the components described above; and has a plurality of through holes 60 for exposing the corresponding electrodes 110. </ RTI> Referring to the storage medium having the structure of the seventh preferred embodiment of the present invention, which is shown in the drawings, is shown. In the present embodiment, the body includes a na, a control IC 3, first and second memories 4 and 5, and a casing 6. The j-plant 1 can be a printed circuit board or a lead frame. In this embodiment, the carrier 1 is a lead frame having a plurality of conductive pins. The fifth memory layer 4 is mounted on the conductive pins of the carrier 1 via the conductor 8 so that the conductive contacts 41 of the first memory 4 are electrically connected to the corresponding conductive pins. The first memory 4 is at the edge of the shape 18 200834427 ft &quot; ο * • * is formed with a plurality of plating recesses 42 electrically connected to the corresponding conductor 8''. The second memory 5 is flip chip The first memory 4 is mounted on the first memory 4 via the conductor 8, so that the conductive contact 51 of the second memory 5 is electrically connected to the corresponding plating recess 42 of the first memory 4. The body 5 4 is identical, and the second memory 5 is formed at its edge with a plurality of plated four grooves 52 electrically connected to the corresponding conductor 8''. In addition, the second memory body 5 and the conductive contact mounting surface The opposite surface 53 of the 50 is formed with a predetermined circuit trace (not shown) electrically connected to the corresponding plating recess 52. The control 1C 3 and the passive components 7 are covered by the above-mentioned crystal. The type 10 is mounted on the surface 53 of the second memory 5. Similar to the first preferred embodiment The outer casing 6 is a through hole 60 for accommodating all of the above-mentioned components and having a plurality of exposed conductive pin portions. Referring to the ninth embodiment, the eighth preferred embodiment of the present invention The storage medium having the structure of 15 stacked components is shown in the embodiment. In the embodiment, the storage medium includes a carrier 1, a control 1C 3, a memory 4, and a housing 0. The carrier 1 may be a printed circuit board or a lead frame. In the present embodiment, the crucible carrier 1 is a lead frame having a plurality of conductive pins. 20 The memory 4 is flip-chip as in the seventh embodiment. Mounted on the conductive pins of the carrier via conductors 8. A predetermined circuit trace is formed on the surface 43 of the memory 4 opposite the conductive "women's surface 40" (not shown). In this embodiment, the conductive pin of the carrier has an inverted L-shaped extension that extends upwardly and is electrically connectable to a corresponding track 19 on the surface 43 of the memory 4. The control 1C 3 and the material passive element 7 are mounted on the surface 43 of the memory 4 in a flip chip manner as described above. • The embodiment is similar, and the difference 6 is to listen to all of the above. And a plurality of through holes 60 having a portion of the conductive pins exposed to the corresponding ones. FIG. 10 is a storage medium having the structure of the element structure of the ninth preferred embodiment of the present invention. A schematic partial cross-sectional view. Unlike the fifth embodiment, the control button 3 and the passive element 7 of the present embodiment are mounted on the surface 40 of the memory 4 in a flip chip manner as described above. Figure 12 is a schematic plan view showing a storage medium having a Utg structure in accordance with a tenth preferred embodiment of the present invention, and a tenth view showing a schematic partial sectional view of the storage medium of the twelfth embodiment. . As shown in the tenth and twelfth drawings, the storage medium pack 15 of the present embodiment includes a carrier i, a control IC 3, first and second memory systems, and φ a casing 6. The carrier 1 can be a printed circuit board or any board made of a suitable material. The carrier 1 has a first surface 10 and a second surface u. • A predetermined circuit trace (not shown) is formed on the first surface 10. A 20th external-connecting electrode U1 and a plurality of second external connecting electrodes (10) are formed on the second surface 11 and they are electrically connected to the corresponding circuit traces on the first surface 10 in a conventional manner. connection. In this embodiment, the first external connection electrode lu is an electrode generally used on a SIM card, and the second external connection electrodes are electrodes used on a memory card for a 2008. The control 1C 3, the memories 4, 5 and the passive elements 7 are mounted on the first surface 1 of the carrier in a flip chip manner as described above. Fig. 12 shows the state of use of the storage medium of the tenth embodiment. • 5 As shown, the storage medium is placed in a card mount s that is placed on the PCB unit PCB of the mobile phone. The fourteenth and fifteenth figures show another application of the tenth preferred embodiment of the present invention. As shown in the figure, in the embodiment, the first external connection electrode m of the storage medium is an electrode generally used on an ic card, and the storage medium is slidably disposed on the IC card. The body (10) is such that when the storage medium is placed in the memory to make it secret (see the second external connection electrode 11G, which is suitable for electrical connection with an external circuit (not shown)), the memory can be achieved. The access operation of the body. The sixteenth figure shows another use of the tenth preferred embodiment of the present invention. As shown in the figure of the first and the first cut (four), in this application, the body B is Forming a through hole Bh and the storage medium is pivotally connected to the body B such that the storage medium is rotatable between a use position of the IC card in a memory use position, in the memory In the use position, the storage medium is perpendicular to the body B. In the use position, the medium is parallel to the age and placed in the through hole. Referring to the seventeenth to nineteenth As shown, the manufacturing method of the storage medium of the present invention is disclosed. As shown in the drawing, the memory contact mounting surface 4 () of the memory body is provided with a conductive contact η and a predetermined circuit trace electrically connected to the corresponding conductive contact 41 (not shown in the figure) 200834427. _ shows). Then, a control IC3 and a plurality of passive components 7 are mounted on the conductive contact mounting surface 4 of the memory 4 in a flip chip manner as described above such that their conductive contacts (Fig. (not shown) is electrically connected to a corresponding circuit trace on the conductive contact mounting surface 40 of the memory 4. 5, then the memory 4 is mounted on the lead frame 1 in a flip chip manner as described above. So that the conductive contacts 41 of the memory 4 are electrically connected to the corresponding pins of the lead frame. φ Next, a housing 6 in which all of the above-described components are housed is formed. 6 has a part of several conductive pins corresponding to the exposure: 10 holes 60. m In summary, the "the library with the stacked component structure.. storage media" can indeed be disclosed by the above. Structure and device to achieve the intended purpose and efficacy' It has not been disclosed in the publication before the application, and it is not in public use. It is in accordance with the novelty, progress and other requirements of the invention patent. '15 However, the drawings and descriptions disclosed above are only for the embodiments of the present invention. EXAMPLES; Other equivalent changes or modifications made by the person skilled in the art, which are based on the characteristics of the present invention, should be included in the scope of the patent application of the following case. [Simplified illustration] BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic partial cross-sectional view of a storage medium having a stacked component and a structure according to a first preferred embodiment of the present invention. The figure is a stacked-type thousand according to a first preferred embodiment of the present invention. A schematic bottom plan view of a storage medium of the present invention; * FIG. 7C is a schematic cross-sectional view of a storage medium having a stacking element 22 200834427 » * . Is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to a third preferred embodiment of the present invention; • FIG. 5 is a stacked component of the fourth preferred embodiment of the present invention. FIG. 6 is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to a fifth preferred embodiment of the present invention; and FIG. 7 is a sixth preferred embodiment of the present invention. FIG. 1 is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to a seventh preferred embodiment of the present invention; 9 is a schematic partial cross-sectional view of a storage medium having a stacked component structure according to an eighth preferred embodiment of the present invention; FIG. 10 is a storage of a stacked component structure according to a ninth preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a schematic partial cross-sectional view of a storage medium having a stacked 70-piece structure according to a tenth preferred embodiment of the present invention; A schematic bottom plan view of a preferred embodiment of a storage medium having a stacked, component structure; and FIG. 13 is a storage medium showing a tenth preferred embodiment of the present invention. A schematic perspective view placed in a mount; fourteenth and fifteenth views are schematic plan views showing a storage medium for use in a tenth preferred embodiment of the present invention for use on a 1C wafer card; Show another embodiment of the storage device of the tenth preferred embodiment of the present invention. 200834427 - another schematic plan view of the storage medium for use on an ic wafer card; and seventeenth to nineteenth views are schematic views showing a method of manufacturing the storage medium of the present invention; Figure 20 is a schematic exploded view showing a conventional storage medium; 5 and 21 are schematic plan views showing the back side of the storage medium of the seventeenth embodiment.

【主要元件符號說明】 1 載體 40 導電觸點安裝表面 10 第一表面 41 導電觸點 11 第二表面 5 第二記憶體 12 通孔 50 導電觸點安裝表面 2 載體 51 導電觸點 20 第一表面 6 外殼 21 第二表面 60 貫乙 3 控制1C 7 被動元件 30 導電觸點安裝表面 8 導體 31 導電觸點 4 第一記憶體 24[Main component symbol description] 1 carrier 40 conductive contact mounting surface 10 first surface 41 conductive contact 11 second surface 5 second memory 12 through hole 50 conductive contact mounting surface 2 carrier 51 conductive contact 20 first surface 6 Housing 21 Second surface 60 B3 Control 1C 7 Passive component 30 Conductive contact mounting surface 8 Conductor 31 Conductive contact 4 First memory 24

Claims (1)

200834427 〇 * 〇 · 十、申請專利範圍: 1. 一種具有堆疊式記憶體結構的儲存媒體,包含: 一個載體,該載體具有一個第一表面和一個與該第 . 一表面相對的第二表面,於該第一表面和該第二表面上 5 是分別形成有預定的電路軌跡,在該第一表面上的電路 軌跡與在該第二表面上之對應的電路軌跡是彼此電氣連 接; φ 一個安裝在該載體之第一表面上的控制積體電路, 該控制積體電路是被配置以致於其之導電觸點是與在該 10 第一表面上之對應的電路軌跡電氣連接; 一個安裝在該載體之第一表面上的第一記憶體,該 第一記憶體是被配置以致於其之導電觸點是與在該第一 表面上之對應的電路執跡電氣連接; 一個部份地疊置在該第一記憶體上以致於其之導電 15 觸點未由該第一記憶體覆蓋的第二記憶體,該第二記憶 φ 體的導電觸點是與該第一表面上之對應的電路執跡電氣 連接;及 . 一個包覆該載體、該控制積體電路與該等記憶體的 、 外殼,該外殼形成有數個用於曝露在該載體之第二表面 20 上之對應之電路軌跡的貫孔。 2. —種具有堆疊式記憶體結構的儲存媒體,包含: 一個載體,該載體具有一個第一表面、一個與該第 一表面相對的第二表面、和一個貫穿該載體的貫孔,於 該第一表面和該第二表面上是分別形成有預定的電路執 25 200834427 - 跡,在該第一表面上的電路轨跡與在該第二表面上之對 應的電路執跡是彼此電氣連接; 一個形成於該載體之第一表面上以致於其之形成有 . 導電觸點之表面是可經由該貫孔進出的記憶體,該記憶 5 體的導電觸點是與在該載體之第一表面上之對應的電路 執跡電氣連接,在該記憶體之形成有導電觸點的表面上 是形成有預定的電路軌跡; φ 一個安裝於該記憶體之形成有導電觸點之表面上以 致於是位在該貫孔之内的控制積體電路,該控制積體電 10 路是與在該記憶體之形成有導電觸點之表面上的電路執 跡電氣連接;及 . 一個包覆該載體、該控制積體電路與該記憶體的外 • '· · 殼,該外殼形成有數個用於曝露在該載體之第二表面上 之對應之電路軌跡的貫孔。 15 3.如申請專利範圍第2項所述之儲存媒體,更包含一個形成 φ 於該載體之第二表面上的第二記憶體,該第二記憶體的 導電觸點是與在該載體之第二表面上之對應的電路執跡 _ 電氣連接。 、 4.一種具有堆疊式記憶體結構的儲存媒體,包含: 20 一個載體,該載體具有一個第一表面、一個與該第 一表面相對的第二表面、和一個貫穿該載體的貫孔,於 該第一表面和該第二表面上是分別形成有預定的電路執 跡,在該第一表面上的電路軌跡與在該第二表面上之對 應的電路軌跡是彼此電氣連接; 26 200834427 〇 » o. - 一個安裝於該載體之第一表面上的控制積體電路, 該控制積體電路的導電解點是與在該載體之第一表面上 之對應的電路軌跡電氣連接; . 一個置於該載體之貫孔内的第一記憶體,該第一記 5 憶體具有一個形成有導電觸點的表面; 一個安裝於該第一記憶體之形成有導電觸點之表面 和該載體之第一表面上的第二記憶體,該第二記憶體是 φ 被配置以致於該第二記憶體的導電觸點是與該第一記憶 體之對應的導電觸點和在該載體之第一表面上之對應的 10 電路軌跡電氣連接;及 一個包覆該載體、該控制積體電路與該等記憶體的 外殼,該外殼形成有數個用於曝露在該載體之第二表面 上之對應之電路軌跡的貫孔。 5.—種具有堆疊式記憶體結構的儲存媒體,包含: 15 一個載體,該載體具有一個第一表面、一個與該第 φ 一表面相對的第二表面、和一個貫穿該載體的貫孔,於 該第一表面和該第二表面上是分別形成有預定的電路執 . 跡,在該第一表面上的電路軌跡與在該第二表面上之對 、 應的電路軌跡是彼此電氣連接; 20 一個置於該載體之貫孔内的記憶體,該記憶體具有 一個形成有導電觸點和與對應之導電觸點電氣連接之預 定之電路軌跡的表面,在該記憶體之表面上的電路軌跡 是經由導體來與在該載體之第一表面上之對應的電路執 跡電氣連接; 27 200834427 一個安裝於該記憶體之形成有導電觸點之表面上的 控制積體電路,該控制積體電路是被配置以致於該控制 積體電路的導電觸點是與在該記憶體之表面上之對應的 . 電路軌跡電氣連接;及 • 5 一個包覆該載體、該控制積體電路與該記憶體的外 殼,該外殼形成有數個用於曝露在該載體之第二表面上 之對應之電路執跡的貫孔。 φ 6·一種具有堆疊式記憶體結構的儲存媒體,包含: 一個第一載體,該第一載體具有一個第一表面和一 10 個與該第一表面相對的第二表面,於該第一載體之第一 表面和第一表面上疋分別形成有預定的電路轨跡,在該 ,第一表面上的電路軌跡與在該第二表面上之對應的電路 軌跡是彼此電氣連接; 一個與該第一載體部份重疊的第二载體,該第二載 15 體具有—個第—表面和-個與該第-表面相對的第二表 • ®,於該第二載體之第一表面和第二纟面上是分別形成 #預疋的電路軌跡’在該第_表面上的電路軌跡與在該 Η 第一表面上之對應的電路軌跡是彼此電氣連接,在該第 二載體H面上的電路祕是與在該第-載體之第 20 一表面上之對應的電路軌跡電氣連接; —個安装於該第_載體之第一表面上的控制積體電 路,該控制積體電路是被配置以致於該控制積體電路的 導電觸點疋與在該第_載體之第—表面上之對應的電路 軌跡電氣連接; 28 200834427 ^ * &amp;釁 一個安裝於該第二載體之第一表面上的第一記憶 體,該第一記憶體是被配置以致於該第一記憶體的導電 觸點是與在該第二載體之第一表面上之對應的電路執跡 電氣連接; 5 一個安裝於該第二載體之第二表面上的第二記憶 體,該第二記憶體是被配置以致於該第二記憶體的導電 觸點是與在該第二載體之第二表面上之對應的電路軌跡 ⑩ 電氣連、接;及 一個包覆該等載體、該控制積體電路與該等記憶體 10 的外殼,該外殼形成有數個用於曝露在該載體之第二表 面上之對應之電路執跡的貫孔。 .7·—種具有堆疊式記憶體結構的儲存媒體,包含·· 一個載體,該载體具有數個導電接腳; 一個安裝於該載體上的第一記憶體,該第一記憶體 15 具有一個形成有導電觸點和與對應之導電觸點電氣連接 φ 之電路軌跡的表面,該第一記憶體是被配置以致於該第 一記憶體的導電觸點是與該載體之對應的導電接腳電氣 . 連接; _ 一個安裝於該第一記憶體上的第二記憶體,該第二 20 記憶體具有一個形成有導電觸點和與對應之導電觸點電 氣連接之電路軌跡的表面,該第二記憶體是被配置以致 於該第二記憶體的導電觸點是與該第一記憶體之對應的 導電觸點電氣連接; 一個安裝於該第二記憶體之形成有電路軌跡之表面 - * * 29 200834427 上的控制積體電路,該控制積體電路是被配置以致於該 控制積體電路的導電觸點是與該第二記憶體之對應的電 路轨跡電氣連接;及 一個包覆該載體、該控制積體電路與該等記憶體的 5 外殼,該外殼形成有數個用於曝露在該載體之第二表面 上之對應之電路執跡的貫孔。 8.—種具有堆疊式記憶體結構的儲存媒體,包含: 一個載體’該載體具有一個第一表面和一個與該第 一表面相對的第二表面,於該載體之第一表面上是形成 10 有預定的電路軌跡,而於該載體的第二表面上是形成有 一個特定用途界面電路和預定的電路軌跡,在該第一表 面上的電路軌跡與在該第二表面上冬對應的電路軌跡和 • . 特定用途界面電路是彼此電氣連接; 一個安裝於該載體之第一表面上的控制積體電路, 15 該控制積體電路是被配置以致於該控制積體電路的導電 觸點是與在該載體之第一表面上之對應的電路軌跡電氣 連接, 一個安裝於該載體之第一表面上的記憶體,該記憶 體是被配置以致於該記憶體的導電觸點是與在該載體之 20 第一表面上之對應的電路軌跡電氣連接;及 一個包覆該載體、該控制積體電路與該記憶體的外 殼,該外殼形成有數個用於曝露在該載體之第二表面上 之對應之電路軌跡的貫孔。 9·如申請專利範圍第8項所述之儲存媒體,其中,該特定用 30 200834427 5 • 途界面電路是為用戶身份模組界面電路。 10. 如申請專利範圍第8項所述之儲存媒體,其中,該特定 用途界面電路是為用戶身份模組界面電路。 11. 如申請專利範圍第8項所述之儲存媒體,其中,該特定 用途界面電路是為金融晶片卡界面電路。 12·—種儲存媒體的製造方法,包含如下之步驟: 於一個記憶體之導電觸點安裝表面上安裝一個控制 積體電路,在該記憶體的導電觸點安裝表面上是安裝有 數個導電觸點和與對應之導電觸點電氣連接之預定的電 10 路轨跡,該控制積體電路是被配置以致於其之導電觸點 是與在該記憶體之表面上之對應的電路軌跡電氣連接; 把該記憶體安裝於一個導線架.上以致於該記憶體的 導電觸點是與該導線架之對應的導電接腳電氣連接;及 形成一個把該記憶體、該控制積體電路和該導線架 15 之導電接腳包覆的外殼,該外殼形成有數個用於曝露該 • 導線架之對應之導電接腳之一部份的貫孔。 31200834427 〇* 〇· X. Patent application scope: 1. A storage medium having a stacked memory structure, comprising: a carrier having a first surface and a second surface opposite to the first surface; Forming a predetermined circuit trace on the first surface and the second surface 5, respectively, the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other; φ an installation a control integrated circuit on the first surface of the carrier, the control integrated circuit being configured such that its conductive contacts are electrically connected to corresponding circuit traces on the first surface of the 10; a first memory on a first surface of the carrier, the first memory being configured such that a conductive contact thereof is electrically connected to a corresponding circuit trace on the first surface; a partial overlay a second memory on the first memory such that the conductive 15 contact is not covered by the first memory, the conductive contact of the second memory φ body is opposite to the first surface Corresponding circuit electrical connection; and a housing covering the carrier, the control integrated circuit and the memory, the housing being formed with a plurality of surfaces for exposure to the second surface 20 of the carrier Corresponding to the through hole of the circuit trace. 2. A storage medium having a stacked memory structure, comprising: a carrier having a first surface, a second surface opposite the first surface, and a through hole extending through the carrier Forming, on the first surface and the second surface, a predetermined circuit holder 25 200834427 - a track on which the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other; Forming on the first surface of the carrier such that it is formed. The surface of the conductive contact is a memory accessible through the through hole, and the conductive contact of the memory 5 is on the first surface of the carrier Corresponding circuit trace electrical connection, a predetermined circuit trace is formed on a surface of the memory formed with the conductive contact; φ is mounted on a surface of the memory formed with the conductive contact so as to be a bit a control integrated circuit within the through hole, the control integrated circuit 10 is electrically connected to a circuit trace on a surface of the memory formed with a conductive contact; and Overlying the support, the control of the integrated circuit and external memory • '· · housing, the housing is formed for several of the exposed through hole corresponding to the upper surface of the support of the second circuit traces. The storage medium of claim 2, further comprising a second memory formed on the second surface of the carrier, the conductive contact of the second memory being associated with the carrier The corresponding circuit on the second surface is _ electrical connection. 4. A storage medium having a stacked memory structure, comprising: 20 a carrier having a first surface, a second surface opposite the first surface, and a through hole extending through the carrier The first surface and the second surface are respectively formed with predetermined circuit traces, and the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other; 26 200834427 〇» o. - a control integrated circuit mounted on the first surface of the carrier, the conductive solution point of the control integrated circuit being electrically connected to a corresponding circuit trace on the first surface of the carrier; a first memory in the through hole of the carrier, the first memory has a surface on which the conductive contact is formed; a surface mounted on the surface of the first memory formed with the conductive contact and the carrier a second memory on the surface, the second memory being φ configured such that the conductive contact of the second memory is a conductive contact corresponding to the first memory and on the carrier Corresponding 10 circuit traces on the first surface are electrically connected; and a housing covering the carrier, the control integrated circuit and the memory, the housing being formed with a plurality of surfaces for exposure to the second surface of the carrier Corresponding to the through hole of the circuit trace. 5. A storage medium having a stacked memory structure, comprising: 15 a carrier having a first surface, a second surface opposite the first φ surface, and a through hole extending through the carrier Forming predetermined circuit traces on the first surface and the second surface, respectively, the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other; 20 A memory disposed within a via of the carrier, the memory having a surface formed with a conductive contact and a predetermined circuit trace electrically coupled to the corresponding conductive contact, circuitry on a surface of the memory The track is electrically connected to a corresponding circuit trace on the first surface of the carrier via a conductor; 27 200834427 A control integrated circuit mounted on a surface of the memory formed with a conductive contact, the control integrated body The circuit is configured such that the conductive contacts of the control integrated circuit are electrically connected to the circuit traces on the surface of the memory; and • 5 The carrier, the control integrated circuit and the outer casing of the memory are formed, the outer casing being formed with a plurality of through holes for the corresponding circuit traces exposed on the second surface of the carrier. Φ 6. A storage medium having a stacked memory structure, comprising: a first carrier having a first surface and a second surface opposite to the first surface, the first carrier The first surface and the first surface are respectively formed with predetermined circuit traces, wherein the circuit traces on the first surface and the corresponding circuit traces on the second surface are electrically connected to each other; a second carrier partially overlapping the carrier, the second carrier 15 having a first surface and a second surface opposite the first surface, on the first surface of the second carrier The circuit traces on the second surface are respectively formed by the circuit traces on the first surface and the corresponding circuit traces on the first surface of the first surface are electrically connected to each other on the second carrier H surface. The circuit secret is electrically connected to a corresponding circuit trace on the 20th surface of the first carrier; a control integrated circuit mounted on the first surface of the first carrier, the control integrated circuit is configured So that the control body a conductive contact of the circuit is electrically connected to a corresponding circuit trace on a first surface of the first carrier; 28 200834427 ^ * &amp; a first memory mounted on the first surface of the second carrier, The first memory is configured such that the conductive contacts of the first memory are electrically connected to a circuit on a first surface of the second carrier; 5 one mounted on the second carrier a second memory on the two surfaces, the second memory being configured such that the conductive contacts of the second memory are electrically connected to the corresponding circuit traces 10 on the second surface of the second carrier And a housing encasing the carrier, the control integrated circuit and the memory 10, the housing being formed with a plurality of through holes for the corresponding circuit traces exposed on the second surface of the carrier. a storage medium having a stacked memory structure, comprising: a carrier having a plurality of conductive pins; a first memory mounted on the carrier, the first memory 15 having a surface formed with a conductive contact and a circuit trace electrically connected to the corresponding conductive contact φ, the first memory being configured such that the conductive contact of the first memory is a corresponding conductive connection to the carrier Foot electrical connection; _ a second memory mounted on the first memory, the second 20 memory having a surface formed with a conductive contact and a circuit trace electrically connected to the corresponding conductive contact, The second memory is configured such that the conductive contacts of the second memory are electrically connected to corresponding conductive contacts of the first memory; and a surface of the second memory formed with circuit traces - * * 29 Control integrated circuit on 200834427, the control integrated circuit is configured such that the conductive contact of the control integrated circuit is a circuit trace corresponding to the second memory a gas connection; and a housing that encloses the carrier, the control integrated circuit, and the memory, the housing being formed with a plurality of through holes for corresponding circuit traces exposed on the second surface of the carrier. 8. A storage medium having a stacked memory structure, comprising: a carrier having a first surface and a second surface opposite the first surface, forming a 10 on a first surface of the carrier Having a predetermined circuit trace, and a second surface of the carrier is formed with a special purpose interface circuit and a predetermined circuit trace, the circuit trace on the first surface and the circuit trace corresponding to the winter on the second surface And the specific application interface circuits are electrically connected to each other; a control integrated circuit mounted on the first surface of the carrier, 15 the control integrated circuit is configured such that the conductive contacts of the control integrated circuit are Corresponding circuit traces on the first surface of the carrier are electrically connected, a memory mounted on the first surface of the carrier, the memory being configured such that the conductive contacts of the memory are associated with the carrier Corresponding circuit trace electrical connection on the first surface; and a housing covering the carrier, the control integrated circuit and the memory, the outer Forming exposed for several circuit traces corresponding to the through hole of the second upper surface of the carrier. 9. The storage medium of claim 8, wherein the specific interface circuit is a user identity module interface circuit. 10. The storage medium of claim 8, wherein the specific use interface circuit is a user identity module interface circuit. 11. The storage medium of claim 8, wherein the specific use interface circuit is a financial chip card interface circuit. 12. A method of manufacturing a storage medium, comprising the steps of: installing a control integrated circuit on a conductive contact mounting surface of a memory, and mounting a plurality of conductive contacts on a conductive contact mounting surface of the memory a predetermined electrical 10 track electrically connected to the corresponding conductive contact, the control integrated circuit being configured such that the conductive contact thereof is electrically connected to a corresponding circuit trace on a surface of the memory; Mounting the memory on a lead frame such that the conductive contact of the memory is electrically connected to a corresponding conductive pin of the lead frame; and forming a memory, the control integrated circuit and the wire The outer casing of the frame 15 is covered by a conductive pin, and the outer casing is formed with a plurality of through holes for exposing a portion of the corresponding conductive pin of the lead frame. 31
TW96105286A 2007-02-13 2007-02-13 Storage medium with stackable component structure TW200834427A (en)

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