TW200832503A - Dopant activation in doped semiconductor substrates - Google Patents

Abstract

Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500 DEG C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

Description

200832503 IX. Description of the Invention: [Technical Field] The present invention relates to a method for activating dopants in a doped semiconductor substrate. [Prior Art]

U Two factors driving the development of electronic components are the desire to increase the density of components on the substrate and to increase the speed by reducing the response time of such components. Both of these factors are related to the overall performance of the product using electronic components. The increased density of components not only allows for the miniaturization of these products, but also allows for the placement of a larger number of components; this allows them to be used for a wider variety of uses or functions. Increasing the speed of individual components also increases the functionality by executing a greater number of instructions in any given time segment. Various techniques have been studied to understand the technique for increasing the speed of the component, and Fig. 1 provides a schematic diagram of the structure of a typical transistor 100. Element 100 has a source 104 and a drain 1 〇 8 region in a semiconductor substrate 116. The material commonly used for substrates is ruthenium. Applying a voltage to the gate 112 allows current to flow through the junction 120 and between the source 104 and the 汲# 108. The conductivity of the junction 1 20 is improved by containing and activating a suitable tamper, and ^ ^ < 1 is steered, thereby increasing the speed of the element. For example, it is known that when the 构 structure is annealed to promote the incorporation of dopants with adjacent ruthenium atoms, the ruthenium and ruthenium dopants can enhance the conduction of ruthenium. The annealing treatment results in the dopants being high in enthalpy + electrons, and the enthalpy rearrangement, thereby enhancing conductivity, in the art step. This step is sometimes referred to as "activation". 6 200832503 The heating step is usually performed by increasing the temperature of the entire substrate. The effect of activation on the conductivity is increased by the ratio of the temperature reached, so it is preferable to raise the substrate temperature to near its melting point. 1410C ' So when the activation is performed by thermal annealing, the degree of hope rises to 1300 to 135 南. Hey. However, atomic diffusivity also increases at these temperatures. Although thermal annealing can achieve the activation effect, this annealing method may also require a relative substrate temperature. This will reduce the control of the butt surface 120. The ability to mention the conductivity of the two joints and the size of the control joints are all required by us. Accordingly, there is a need in the art for a foreign matter and to maintain control over the size and shape of the component joints. SUMMARY OF THE INVENTION Embodiments of the present invention provide a method for depositing a non-method on a substrate. In certain applications, the amorphous carbon film can be used as a dopant in a disk. U In a first set of embodiments, a substrate processing chamber is deposited with a material on the surface of the substrate processing chamber. The substrate is transferred to the conditioned substrate for processing, and hot gas flows into the conditioned substrate processing chamber. Within the order, a first plasma is formed from the heated gas. The first ^ electrical material is deposited on the substrate to act as a liner. Thereafter, it flows into the substrate processing chamber. In the substrate processing chamber, the second plasma is used to perform activation on the liner by using the second plasma to form a melting point which is substantially positive, and the replacement of the substrate in the temperature of the substrate is longer. The size of the time and the ability of the shape to activate the blending method. The crystallization of the crystalline carbon film is adjusted in the base for f (seasoning chamber). The addition of the substrate processing chamber slurry causes the tuned carbon precursor precursor to form the amorphous carbon thin 7 200832503 film. In some embodiments, the adjustment The material comprises carbon and the liner comprises a carbon liner. In other embodiments, the conditioning material comprises nitrogen, the liner comprising a nitrogen liner, sometimes before the substrate is transferred to the substrate processing chamber The substrate is heated.

A suitable carbon precursor comprises a hydrocarbon precursor. When such precursors are used, the amorphous carbon film may contain hydrogen. In certain embodiments, the nitrogen precursor is streamed into a substrate processing chamber having the carbon precursor. The second plasma is then formed from the carbon precursor and the nitrogen precursor such that the amorphous carbon film contains nitrogen. In other embodiments, an oxygen containing gas is passed to a substrate processing chamber having the carbon precursor. It is also possible to carry a carrier gas into the substrate processing chamber having the carbon precursor. When the amorphous carbon film is deposited, an electrical bias can be applied to the substrate. In some embodiments, the strength of the electrical bias can be varied during deposition. For example, in one embodiment, an initial electrical bias can be applied to the substrate at the initial stage of depositing the amorphous carbon film on the substrate. The starting bias is below a steady state bias. The electrical bias is raised from the initial electrical bias to a maximum electrical bias that exceeds the steady state bias. The electrical bias is then reduced from the maximum electrical bias to the steady state bias before the substrate temperature rises above 500 °C. The second plasma can be induced to form a high density plasma having a density greater than 10 11 ions per cubic centimeter. In a second set of embodiments, the substrate is transferred to a substrate processing chamber. Formed by a first precursor using a remote plasma system outside the substrate processing chamber 8

υ 200832503 The first plasma. An ionic species from the first plasma flows into the substrate chamber to deposit a liner on the substrate. Thereafter, a second precursor is streamed to the substrate processing chamber. The second precursor comprises carbon. A second plasma is formed from the second precursor in the substrate processing chamber. The amorphous carbon film is deposited on the liner using the second plasma. In some embodiments, the first precursor comprises carbon such that the carbon liner is included. In other embodiments, the first precursor comprises nitrogen and the liner comprises a nitrogen liner. In some embodiments, the substrate is preheated prior to transferring the substrate to the substrate processing chamber. The second precursor sometimes also contains hydrogen, and the amorphous carbon film thus contains hydrogen. A third precursor is sometimes incorporated into the substrate processing chamber having the second precursor, and the second plasma is formed by the second and precursors. For example, the third precursor may comprise nitrogen. The amorphous carbon film may thus comprise nitrogen. In other embodiments, an oxygenate flows into the substrate processing chamber having the second precursor. Many embodiments package a carrier gas stream into a substrate processing chamber having the carbon precursor. In some embodiments, an electrical bias is applied to the substrate when depositing the amorphous carbon film. During deposition, the electrical bias can be changed in a manner similar to that described above in accordance with a set of embodiments, i.e., an initial bias is applied that is biased below the state, and the bias is raised beyond the steady state. The maximum bias voltage is biased and then the bias voltage is reduced to the steady state bias before the substrate temperature rises above 500 °C. Also similar to the first set of specific examples, in some second set of embodiments, the second plasma can be induced to form a high density plasma having a density greater than 1011 ions per cubic centimeter. In a third set of embodiments, the substrate is transferred to a substrate processing chamber for processing, and the pad is filled with a gas plate.

U 200832503 and an electrical bias is applied to the substrate. A first carbon precursor is injected into the substrate chamber to create a pressure greater than 1 Torr in the chamber. Utilizing the bias, the first carbon precursor forms a first plasma for forming the source with a source of less than 500 watts. After depositing a liner on the substrate using the first plasma, the pressure in the substrate processing chamber is reduced to less than 50 mTorr. A first carbon precursor is introduced into the substrate processing chamber to utilize a source power of more than 1000 watts. The second carbon precursor induces a second plasma. The second plasma is a density plasma having a density greater than ι 离子 ions per cubic centimeter. The amorphous carbon film is deposited on the outline by the second electric charge. As in other sets of embodiments, the substrate may be preheated prior to delivery of the substrate to the chamber, and the various floods and additional fluids supplied to the processing chamber are similar to those described in accordance with the embodiments thereof. In various embodiments, the deposited amorphous carbon film may have an extinction coefficient greater than 0.3 at a wavelength of 81 nm. Embodiments of the present invention also provide a method of activating a dopant in a doped semiconductor substrate. In a fourth set of embodiments, a carbon precursor is introduced into a substrate processing chamber and the doped semiconductor wafer is placed in the substrate processing chamber. A plasma is formed from the carbon precursor in the substrate processing chamber. The plasma deposits a carbon liner on the substrate. The substrate temperature was maintained below 500 ° C during the deposition of the carbon film. The deposited carbon film is exposed to a magnetic radiation for a period of less than 10 milliseconds, and the deposited carbon film has an extinction coefficient of more than 0.3 at a wavelength included in the electrical radiation. The electromagnetic radiation can be substantially monochromatic. Alternatively, the electromagnetic radiation comprises a wavelength band, and the extinction coefficient of the carbon film in the wavelength band is greater than 0.3 at each wavelength of the 10200832503. The entire surface of the deposited carbon film can be completely exposed to the electromagnetic radiation at the same time. In other embodiments, the shape of the beam of electromagnetic radiation is shaped and a beam of the shape is scanned across a surface of the deposited carbon film to substantially cover the entire surface. In some embodiments, the deposited carbon film is removed from the substrate, e.g., by exposing the substrate to an oxygen plasma.

Ο The carbon precursor may comprise a hydrocarbon precursor comprising hydrogen. In some embodiments, the nitrogen precursor also flows into the substrate processing chamber having the carbon precursor. The electropolymer is then formed from the carbon precursor and the nitrogen precursor such that the deposited carbon film contains nitrogen. In other embodiments, an oxygen-containing gas flows into the substrate processing chamber having the carbon precursor. In some embodiments, a carrier gas can also flow into the substrate processing chamber. A suitable example of a carrier gas contains argon and nitrogen molecules. The carrier gas flow rate can vary over time. For example, at the beginning of the inflow of the carrier gas, the flow rate can be lower than a steady state flow rate, and then after a portion of the carbon film has been deposited on the substrate, the flow rate is increased to the steady state flow rate. In some embodiments, the substrate temperature is below 40 °C during deposition of the carbon film. A technique for maintaining the temperature of the substrate consists in flowing a coolant into the substrate processing chamber adjacent to the back side of the substrate. In a fifth set of embodiments, a carbon precursor also flows into a substrate processing chamber in which the doped semiconductor substrate is placed. A high density plasma is formed from the carbon precursor in the substrate processing chamber. The density of the high density plasma is greater than 1011 ions per cubic centimeter. An electrical bias is applied to the substrate. A high-density plasma is used to deposit a 11200832503 carbon film on the substrate using a process that simultaneously provides deposition and sputtering features. The deposited carbon film is exposed to a period of time shorter than 1 〇 millisecond, and the deposited carbon film has an extinction coefficient of more than 0.3 at a wavelength included in the electromagnetic. Many specific embodiments have features corresponding to the first set of embodiment examples described above. Moreover, in some embodiments, the applied electrical bias is a substantially constant amount of 'pressure' when the carbon film is deposited on the substrate. It is also possible, in some embodiments, to be electrically biased during deposition of the carbon film. For example, in one embodiment, an initial electrical bias can be applied to the substrate at the initial stage of depositing the carbon film on the C, the substrate; the initial bias is below a steady state bias. The electrical bias is biased from the initial electrical impedance to a maximum electrical bias that exceeds the steady state bias voltage. Then, the electrical bias reduces the steady state bias from the maximum electrical bias before the substrate is warmed up to more than 50,000 C. With reference to the remainder of this specification and the drawings, the substance and advantages of the invention can be further understood. [Embodiment] Embodiments of the present invention utilize an electromagnetic mechanism to anneal a substrate. This type is used to raise the temperature in a very short period of time by exposure to electromagnetic radiation - this time passes two levels in the leap second. The resulting temperature characteristics are schematically shown in Fig. 2, which shows that after a short period of time Δt, the temperature rapidly rises below the melting point of the substrate by 73⁄43⁄4 plate. For example, when the substrate is 矽 2 the dotted line in the figure may correspond to a temperature of 141 〇 t: during which the temperature rapidly rises to about 3 5 3 5 〇Ό. Due to the shape of the temperature special line, such an electromagnetic mechanism for annealing is sometimes referred to as "the magnetic biasing of the magnetic radiation of the sharp magnetic radiation. The height of the substrate rises to the degree of the hair," To the slightest, the first, the sex peaks retreat 12 200832503 fire (spike anneal). The intensity of the electromagnetic radiation is typically related to the peak temperature obtained, and the intensity of the electromagnetic radiation can be adjusted to achieve the desired temperature required to perform the annealing. The time at which the temperature is substantially maintained at the peak temperature is sometimes referred to as the "dwell time" of annealing, and the time can be controlled in a number of different ways depending on the manner in which electromagnetic radiation is applied to the substrate. For example, in a particular embodiment, the shape of the electromagnetic radiation can be shaped by suitably arranged lenses, mirrors, and the like, and the substrate scanned with the radiation. In such embodiments, the scan speed can be used to control the dwell time, which sometimes ranges from about 20 mm/sec to 300 mm/sec. Embodiments using such a laser beam shaping method typically use a source of substantially monochromatic light 'although a wideband source may be used in alternative embodiments. For example, an embodiment uses a 40 kW laser to provide a beam having a wavelength of about 8 1 奈 nanometer and a shape of about 1 mm 乂 12 mm. In other embodiments, electromagnetic radiation is applied to the unitary substrate in a substantially uniform manner. It is not necessary to raise the temperature of the environment in which the substrate is placed to the melting point of the substrate, and the peak annealing can be obtained by activating the electromagnetic source for a short period of time. In such embodiments, the electromagnetic radiation typically has a wide band source' although alternative embodiments may use narrow band or nearly monochromatic sources. In such embodiments, the substrate is illuminated by one or more "arc lights" or "flash lamps" disposed within the substrate processing chamber, the lamps being configured to uniformly illuminate the substrate with a desired intensity in a short period of time . Regardless of the mechanism used to provide electromagnetic radiation, that is, whether it is a monochromatic source or a broadband source, the local edge β is supplied to the substrate, and the annealing effect is affected by the substrate reflectivity: . More specifically, even if there is a change in the thickness of the substrate and the phase in the composition (this change is common in commercial substrates), too. < Mild sinus for different reflectivities at different points on the substrate, may convert dry] only shell differences. This is because when light is shot onto the surface of the substrate, the energy of the light source is lightly coupled to the substrate: Π rate...=reflectance. The local change in reflectance is converted to a local temperature change at the time of performing the annealing. Due to the different component structures at different positions on the substrate, the change of w 9 ^ ^ and 2 μ degrees leads to the same component. The performance of this component is inconsistent. Hope to happen. In the embodiment of the invention, a carbon film is used on the substrate during the electromagnetic annealing to improve the uniformity of the annealing. The KH ^ Ab ^ anti-film is a black body, which is effective and substantially X-shaped. The energy from the electromagnetic source is coupled to the substrate to provide a consistent peak temperature during the annealing of the peak. Since the carbon film is usually used in the manufacture of components, it can be removed after the annealing is performed. In order to effectively absorb electromagnetic radiation, the extinction coefficient of the carbon film is preferably greater than ^ 聢 better than 〇 · 3, and in some embodiments, the extinction coefficient is greater than 0.5. The total amount of this subtraction is added to the first coefficient k for general measurement, which is used to indicate the reduction of the electromagnetic wave in the material &妄,,士士# / /_. The extinction coefficient usually depends on the wavelength of the radiation source. The carbon film provided by the embodiment of the present invention has an extinction coefficient of less than 0·3 in the squatting of the county. In the case of a color radiation source, the 'shear optical coefficient exceeds 〇·3 at the radiation wavelength, and when a broadband radiation source is used, the extinction coefficient exceeds 〇·3 over the entire frequency band. Thus, an overview of the process for fabricating components on a substrate is provided in the flowchart of FIG. This flow diagram indicates that the process typically begins with a preparation base of 3 0 4 ^ ^ ". The substrate can be prepared in a variety of different ways, including the formation of certain features on the substrate using a number of: and/or engraving processes. The V-segment generally includes ion implantation of the substrate to implant doping, followed by spike aneal to activate the dopant. In step 308, the ruthenium film is deposited on the substrate. In the deposition of carbon film, due to carbon lotus τ 1 '

The film-seeking process does not form part of the final component structure, so the requirements for the factors of concern during the deposition process can be relaxed. These include: release: carbon film thickness-induced requirements and other factors of strict

疋, other specific processing conditions are still preserved, where one B 埶 皙 α /, τ < 疋 pair #, constraint 'it will affect the progress of deposition. The magnetic peak is monochromatic. The different annealing of the peaked plate is usually performed by removing the substrate from the substrate. After the carbon film is deposited in step 308, electrical annealing is performed in step 312. As previously mentioned, the peak anneal can be performed using substantially narrow frequency or wide band electromagnetic radiation in different embodiments, and the tip can be performed in a partial or holistic manner in an embodiment. When performed locally, the shape of the radiation can be shaped and the entire carbonized surface of the substrate can be illuminated simultaneously when the = insert is performed as a whole. ^ The carbon film is removed in step 3 16 . In different embodiments: a number of different techniques can be used to remove the carbon film. A suitable technique: plasma ashing, which can effectively remove the carbon film, and the substrate below the film. It is possible to modify the film in step 316 because of the inclusion of carbon, although it is necessary to avoid modification of the process from the film to the g in the special application. By the 兮 兮 竑 土 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保

Ο The amount of residue in 200832503 is minimized, and by avoiding the application of excessive electrical bias during deposition (the application of excessively high electrical bias will drive carbon into the sense # often avoids carbon implantation. After removing the carbon film, The residual path can be completed on the substrate as shown in step 325. A method for depositing the carbon thin is described in more detail in conjunction with Fig. 4, and Fig. 4 is substantially corresponding to step 3 of Fig. 3 Flow of 2 In this figure, a plurality of steps show a demonstration process, but this process variation is also within the scope of the invention. For example, certain additional steps explicitly indicated in the drawings may sometimes be performed, sometimes omitted Some of the steps indicated, sometimes the order of these steps can be changed. When the substrate temperature rises, the characteristics of the dopant in the substrate now satisfy the thermal budget of the process of Figure 4. The distribution of the impurities is substantially uniform. It is generally desirable to maintain this substantially uniform distribution when the dopants are activated and in the middle of the bond, when the substrate temperature rises above about 500. (:, There will be a hot migration, As the concentration of some dopants occurs, the uniformity of distribution within the doped plate is reduced. When the annealing is performed in step 316 of Figure 3, the time is short enough to cause the dopant to settle at the current location. The dopants are generally evenly distributed, and it is desirable to keep the substrate temperature below the specific process pattern not shown in Figure 4 before performing the spike anneal in the third step 361 to allow the thermal budget during the deposition of the carbon film. Generally, in step 408, the step 408 transfers the substrate to the substrate, and the equation of the film is formed. In some of the various patterns, the substrate and the substrate are formed, but the debris is at the base line and The step of the key map is 5 00 〇 C. This is sent to the base 16 404 200832503 board processing chamber. However, in some examples, the substrate is preheated in steps prior to this transfer; the effect of this preheating will be described below. Once the substrate processing chamber is pressurized, the processing chamber is pressurized with a heated gas at step 412. Step 416 produces a plasma from the heated gas for use in the substrate at step 420. This heating phase of the process is used to base the substrate. The temperature rises to effectively complete the subsequent deposition process without exceeding the presence of the gas. The heated gas is typically a gas that does not react with the substrate, and may include, for example, ruthenium, osmium, or An inert gas such as argon. Suitable heating gases used in other different embodiments include hydrogen and nitrogen, etc. The inventors have discovered that the heating phase in this process may cause a decrease in substrate conductivity, especially when the heating gas contains helium. The drop is not conducive to improving the junction conductivity of the component, so it is preferable to shorten the time to the shortest. At step 404, preheating the substrate outside the processing chamber for a time to expose the step 420 to the heated plasma. For example, in one embodiment, to achieve such preheating, the Q may be exposed to the lamp in a load lock chamber prior to delivery to the processing chamber. Other techniques for initializing the substrate include: heating the electrostatic chuck to hold the substrate in one of the processing chambers - applying thermal energy generated by the resistor through the chuck to avoid electrical heating. The negative impact of sexuality. It is assumed that the effect of exposure to the heated plasma on the conductivity is caused by the radiation of the heated gas. When the gas is heated, it naturally emits electromagnetic radiation of a specific wavelength carried by its electronic structure. According to the study of the present invention, when exposed to electromagnetic radiation of a radiant wavelength, the entry into the heat of the foot can be caused to cause the conductive heating plate to be short when the substrate is used. Free from the launch of the case

200832503 The conductivity of the board is particularly susceptible. Therefore, some embodiments utilize or argon as the heating gas. Whether the substrate heating step is achieved either by exposure to the heated plasma or by a combination of preheating and heating, once the substrate is heated, the carbon film suitable for the step 424 is established in the processing chamber. Environmental conditions. Typically, such environmental conditions include temperatures between about °C and about 850 °C, and sometimes temperatures below 4,000 °C to meet a more stringent thermal budget. The pressure within the substrate processing chamber can range from millitorr to about 50 mTorr, although variations in this range can sometimes be made. In step 4 2 8, one or more precursors are introduced into the substrate processing chamber to be accompanied by a carrier gas flow. A plasma is formed from the precursor and the carrier gas. The heated plasma may be terminated by maintaining the heated plasma and flowing the precursor into the processing chamber, or a second plasma may be generated prior to flowing the precursor. In either case, the plasma may sometimes comprise a high-density slurry, herein referred to as an electrical high-density plasma having a density greater than 10 11 ions/cm 3 and characterized by having a sufficient density to render the material Sufficient from the substrate is mechanically sputtered while the material is applied to the substrate from the plasma. Embodiments using high density plasma may be easier to meet, but in some embodiments a more conventional electro-potential deposition process with lower plasma density may be utilized. There are other different techniques that can be used to form the plasma, including the use of electrical and inductive coupling mechanisms. The plasma ion generated by inductive coupling is higher than the plasma ion density generated by capacitive coupling, and is usually used to form high nitrogen and electricity. Deposition 300 ensures that about 5, for example, can be used to produce plasma. Material deposition, thermal pre-slurry, volumetric coupling, density, density, 18 200832503, plasma. In some embodiments, the inductively coupled plasma is formed with a source power of 1 ο ο ο - 800 watts to effectively effect carbon film deposition.

The precursor flowing into the substrate processing chamber at step 4 2 8 includes a carbonaceous precursor, which in various embodiments may be in the form of a gas or a vaporized liquid. The carbonaceous precursor may comprise a hydrocarbon precursor, examples of which include alkane compounds such as methane (CH4), ethane (C2H6), and propane (C3H8); alkenes, examples of which include ethylene (C2H4), propylene (C3H6) , butene (C4H8), etc.; acetylene compounds, examples of which include acetylene (C2H2), propyne (C3H4), butyne (C4H6), etc., aromatic compounds include C6H6, C8H6, C8H8 and the like. While the foregoing hydrocarbon precursors exemplify precursor examples consisting of carbon and hydrogen, in other embodiments, other compounds containing additional elements such as nitrogen may also be used. In some embodiments, the appropriate flow rate of the precursor in step 4 2 8 can be between 50 and 1000 sccm. The use of different hydrocarbon precursors can result in different hydrogen contents in the deposited carbon film. For example, the use of hydrocarbon precursors with double or triple bonds typically provides a lower density of hydrogen in the plasma, resulting in a lower concentration of hydrogen incorporated into the carbon film, although a pure single bond hydrocarbon precursor can be used. Things. It is recognized that the use of hydrocarbon precursors can result in different hydrogen contents, so the term "carbon film" as used herein encompasses those films which may contain significant amounts of non-carbon elements in the composition, especially those containing significant amounts of hydrogen. It should also be noted that the form of the carbon bonds may vary in different portions of the film. Although the film is most likely to be in the form of amorphous carbon, there may be portions or regions in the form of pyrolytic, graphite or diamond-like forms. However, since the film is generally predominantly amorphous carbon, it is sometimes referred to in the art as a "amorphous carbon" film by 19 200832503; this term does not imply that the film is 1% amorphous or 100% Carbon. In addition to incorporating other elements into the film using carbon precursors containing other elements, additional precursor gas streams can sometimes be provided to the processing chamber. For example, in some embodiments, the film may contain nitrogen by flowing a stream of nitrogen or ammonia gas. This increases the extinction coefficient, thereby improving the effect of electromagnetic peak annealing, but makes the film easier to peel off.

Ο At step 428, other gases may also be supplied to the substrate processing chamber even if they do not provide an element to be integrated into the carbon film. This additional gas stream provides an element that reacts with other plasma elements to control how the carbon film is produced. For example, an oxygen molecule (〇2) gas stream provides an oxygen atom that reacts with weakly bonded carbon atoms in the film. Although this process does not incorporate oxygen into the film, the carbon film is made denser and the film has a higher extinction coefficient due to higher density. Although a carrier gas is included in step 42 8 , it may be the heated gas used in step 412 or it may be a different gas. In some examples, the composition of the carrier gas can be varied during the deposition process. For example, in the early stages of the deposition process, the negative effects of germanium on the conductivity of the substrate may be significant. If at least some of the carbon film is deposited, this negative effect is caused because the substrate is no longer directly exposed to radiation from helium. Will weaken. In some embodiments, helium may be used as a carrier gas after the initial portion of deposition using a different carrier gas (e.g., argon). In any case, the inventor believes that the use of helium as a carrier gas during deposition will be less harmful than the use of helium during heating, as the partial deposition of 20 1000 200832503 carbon film provides protection. . The appropriate flow rate of the carrier gas is between 0 and seem. The inventors of the present invention also found that the flow rate of the carrier gas during the deposition helped to stabilize the film. This is illustrated in Figure 5, where the carrier gas flow rate is relatively low at time and then rises to its steady state flow rate during deposition. The initial flow rate is slower than the steady state flow state, but greater than 50% of the steady state flow rate. • There are also many variations in the recipe. For example, 4 3 2 of Fig. 4 indicates that a bias voltage can be applied to the substrate. Applying a bias voltage increases the attractive force of the electrons toward the substrate, thereby increasing the deposition rate and increasing the adhesion of the film to the substrate. However, it has previously been pointed out that if the bias voltage is exceeded, the risk of implanting carbon into the substrate is increased. Therefore, although some implementations impose a constant bias on the substrate, as shown in Figure 6A, other examples use a varying bias voltage. A suitable bias curve is shown in Figure 6B. In the embodiment utilizing this curve, providing a lower than the steady state value of the initial bias provides the stability of the initial deposition of the film without the risk of substantial carbon addition. . Then, after depositing the protective portion of the film, () the bias voltage is increased beyond the steady state value for stabilizing the film, and increasing ^ ^ Η ^ ° ^ ^ ^ Μ %, ί j iLil, To avoid affecting the thermal budget of the process, the bias is reduced to a steady state value, and in the embodiment, the bias voltage will remain at a steady state until the film deposition is complete. In the real world with a substantially constant bias as shown in Fig. 6A and in the real-time bias value of the bias value as shown in Fig. 6B as a function of time, the appropriate steady-state bias value is between 〇 and 5 〇〇〇. Between the tiles. In some embodiments, 'cooling can be performed on the back side of the substrate, such as the initial step, the slurry is thinner than the carbon, and the embodiment is applied to the pressure; the high planting is sufficient for the process. 21 200832503

1; Step 436 is shown in the figure. To provide backside cooling, a helium cooling stream is typically flowed through the structure of the support substrate within the processing chamber, and it can be used to compensate for other process aspects where the substrate temperature is to be raised. For example, backside cooling prevents the substrate temperature from deviating from the thermal budget limit, while higher bias voltages can be used to increase the adhesion of the carbon film to the substrate. In other cases, the use of backside cooling allows the use of higher source power to form the plasma. In embodiments using a carbon precursor having a double or triple bond, the energy required to break the double or triple bond is greater than the energy required to break a single bond in other precursors when forming the plasma. It is particularly desirable in these embodiments to use higher source power. Step 440 of Figure 4 illustrates that in some embodiments, a liner can be formed on the substrate. The liner is utilized for at least two purposes: to protect the substrate from the negative effects of the plasma on its electrical conductivity, and to improve the adhesion of the carbon film to the substrate. In various embodiments, there are a number of techniques that can be used to form a liner. It is noted that although many embodiments may deposit the liner as a carbon liner, this is not a critical requirement of the present invention, and other compositions may be used to form the liner. This is because in step 444, a carbon film will then be deposited on the liner to provide the desired absorption of electromagnetic radiation. After depositing the carbon film » Λ 44 8 it M M m ^ A 452 m M ΆΜ iti The substrate processing chamber for additional processing. The method for depositing the liner is illustrated by the flow chart of Figure 7. The method adjusts the processing chamber before transferring the substrate to the processing chamber in step 408 of Figure 4. After cleaning the processing chamber at step 704, in step 708, adjustment (s e a s n i n g) is performed by forming a coating on the inner surface of the processing chamber. In various embodiments, depending on the desired composition of the liner, 22 200832503 the coating may include carbon, nitrogen, and other elements. After the substrate is transferred to the substrate processing chamber in step 712, a plasma is formed in step 716 to heat the processing chamber, and the conditioning material is redeposited onto the substrate as a liner. The plasma formed in step 716 corresponds to the heated plasma formed in step 416 of Figure 4, and its composition is similar to that described with reference to Figure 4.

Another method for depositing a liner is illustrated by the flow chart of Figure 8. In this method, the initial deposition plasma is formed only under high voltage bias conditions, or only by weak source power. It may define the initial plasma conditions in step 428 of Figure 4. Of these conditions, the typical pressure is between about 10 mTorr and 1 Torr. Under these pressures and preferably weak source power, the conditions in the inductively coupled processing chamber are similar to those in a typical capacitively coupled processing chamber. That is, the plasma density is very low, and it is possible to deposit a liner having better adhesion in step 808 and cause less plasma damage. Then, after depositing the liner, the carbon film body is deposited in step 81. Yet another method of depositing a liner is illustrated by the flow chart of Figure 9. An embodiment using this method utilizes a remote plasma system to activate the carrier gas species in step 904. The activated carrier gas species are used to strike 1 lining of the first 塁1 soil in step 908 without directly exposing the substrate to the plasma. In step 916, the transition to the host deposition condition is made. Example of a Substrate Processing System One example of a substrate processing system that can be used to perform an embodiment of the present invention is the ULTIMATM system manufactured by Applied Materials, Inc. of Santa Clara, Calif., in conjunction with U.S. Patent No. 6,1,470,428, and title. This system is described in its entirety in Symmetry 23 200832503 Adjustable Inductively Coupled HDP-CVD Reactor. The patent was filed in July 1996 by Fred C. Redeker, Farhad Moghadam, Hirogi Hanawa, Tetsuya Ishikawa, Dan Maydan > Shijian Li, Brian Lue, Robert Steger, Yaxin Wang, Manus Wong, and Ashok Sinha, et al., the entire disclosure of which is incorporated herein by reference. A summary of this system is provided below in conjunction with Figures 1A and 10B. Fig. 1A schematically shows the structure of this HDP-CVD system 1010 in an embodiment. The system 1〇1〇 includes C ί • a processing chamber 1013 , a vacuum system 1 070 , a source plasma system 1 0 8 0A, a bias plasma system 1 080B, a gas delivery system 1 03 3 and a far End plasma cleaning system 1 0 50. The upper portion of the processing chamber 1013 includes a chamber top 1014 made of a ceramic dielectric material such as alumina or aluminum nitride. The top of the chamber 1 〇丨 4 defines the upper boundary of the plasma processing zone 1016. The plasma processing region i 〇 16 defines a bottom boundary thereof by the upper surface of the substrate 1017 • and the substrate supporting member 1018. A heating plate 1 023 and a cooling plate 1 024 are located above the chamber top 1014, (j and thermally coupled to the top. The heating plate 1〇23 and the cooling plate 1024 allow the chamber top temperature to be controlled in the range of about 100 art to 200t: Approximately ±1〇<t. can provide optimized chamber top temperatures for various processes. For example, for cleaning or etching processes, it may be desirable to maintain the chamber top temperature above the top of the deposition process. Controlling the temperature at the top of the chamber can also reduce the number of debris or particles in the processing chamber' thereby increasing the adhesion between the deposited layer and the substrate. The lower portion processed to 101 includes a body member 22 that connects the processing chamber To the vacuum system, the base portion 24 200832503 1021 of the substrate supporting member 1〇18 is mounted on the main body member 1〇22, and the main body member 1 022 forms a continuous inner bucket surface. 1〇1 - Insertion/removal of the mountain, gentleman's ^ (not shown), the substrate is transferred into or out of the processing chamber 1013 by a machine blade (not 1 Λ 1, 6 m, diced out). The sum of the motors (not shown): ^ " Raise the two and then lower the lift pin (not shown) to move the substrate from the machine blade of the 丨 loading position 1057 to the lower processing position 1 〇 56 position at the processing position, the substrate is placed on the substrate support 1G18 substrate receiving part

Ο (10). The substrate receiving portion 1019 includes an electrostatic loss disk 1〇2〇 which fixes the substrate on the substrate supporting member 〇ΐ8 during substrate processing. In a preferred embodiment, the substrate support member 1G18 is made of an oxidized m Tauman material. Further details of the substrate supporting member of the embodiment of the present invention are provided below. The vacuum system 1 070 includes a throttle body 1 025 that houses a twin-blade throttle valve 1 026 and is coupled to a gate valve 1〇27 and a turbo molecular pump 1 028. It should be noted that the throttle body 1〇25 provides minimal obstruction to the airflow and allows for symmetrical suction. The gate valve i 〇 2 7 separates the pump 1 0 2 8 from the throttle body 1 〇 2 5 and can also control the chamber pressure by limiting the exhaust flow when the throttle valve i 〇 2 6 is fully open. This throttle valve, gate valve, and turbomolecular pumping configuration allows for more accurate and stable control of the chamber pressure between about 1 Torr and about 2 Torr. The source plasma system 1 0 8 0 A includes a top coil 1 〇 2 9 and a side coil 1 〇 30 that is mounted on the roof 1014. A symmetrical grounding shield (not shown) reduces the electrical coupling between the two coils. The top source radio frequency (SRF) generator 103 1 A supplies power to the top coil 1 029 and the side SRF generator 103 1B supplies power to the side 25

Ο 200832503 Coil 1 03 0, * Allows the material coil to provide independent power, quantity and operating rate. This dual coil system controls the radial ionics within the processing chamber 1013: thereby increasing plasma uniformity. The side coil 1030 and the top coil 1 029 are driven inductively by 2, which do not require complementary power in the embodiment of the present invention. : The operating frequency of the top and side RF generators contained by the coils in the above-mentioned features can exceed the rated operating frequency (for example, eight offsets to 1.7 to 19 megahertz and 19 to 2 megahertz) To increase the plasma generation efficiency. The bias electrical system 1 0 8 0 B includes a bias RF (BRF) generator 1 〇 3 1 C and a bias matching network 丨〇 3 2 c. The plasma system 丨〇8 〇b capacitively couples the substrate portion 1017 to the body member ι 22 as a complementary electrode. The bias plasma system 1 〇8 〇B is used to help the source plasma system 1 〇8 0 A The generated plasma species (eg, ions) are delivered to the surface of the substrate. The RF generators 1031A and 1031B include digitally controlled synthesizers operating at frequencies ranging from about 1 · 8 to about 2 · 丨 megahertz. As is known to those of ordinary skill in the art, each generator includes a radio frequency control circuit (not shown) that measures the power generated by the processing chamber and the coil back to the generated fuel and adjusts the operating frequency to obtain the lowest reflection. Power. RF generators are usually Used to operate a load with a 5 ohm impedance. If the characteristic impedance of the load is different from the generator, the power is reflected by the load. This reduces the power delivered to the load. In addition, the load is reflected back to the generator. The power may be overloaded and damage the generator. Because the impedance of the plasma can vary from less than 5 ohms to more than 900 ohms depending on the plasma ion density and other factors, and because the reflected power may be 26 200832503 The function of the frequency, so adjusting the generator frequency based on the reflected power can increase the power delivered to the plasma by the RF generator and protect the generator. Another way to reduce the reflected power and improve efficiency is to use a matching network.

The matching networks 1032A and 1032B match the output impedances of the generators 1031A and 1031B to the respective coils 1 029 and 1 030. The RF control circuit can adjust the two matching networks by changing the value of the capacitance in the matching network to match the generator to the load as the load changes. The RF control circuit can adjust a matching network when the power reflected from the load back to the generator exceeds a certain limit. One way to provide a constant match and effectively disable the RF control capacitor to adjust the matching network is to limit the reflected power to a value higher than any reflected power. This helps to stabilize the plasma under certain conditions by keeping the matching network constant in its most recent conditions. Other measures can also help stabilize the plasma. For example, the RF control circuit can be used to determine the power delivered to the load (plasma) and can increase or decrease the generator output power to maintain the transmitted power substantially constant during deposition of the film. The air supply system 103 3 supplies gas from a plurality of gas sources 1 034A - 1 034E to a processing chamber for processing the substrate via a gas delivery line 108 8 (only a portion of which is shown). It will be understood by those skilled in the art that the actual source of gas source 1 034A-1 034E and the transfer line 1 03 8 to the process chamber 1 0 1 3 can be varied depending on the deposition and cleaning processes performed within the process chamber 1013. The actual connection method. Gas is introduced into the process chamber 1013 via a gas ring 1 0 3 7 and/or a top nozzle 1045. Figure 10B is a simplified partial wear view of the process chamber 1013 showing additional details of the gas ring 107 7 . 27 200832503 In one embodiment, the first and second air sources 1 034 Α, 1 03 4 Β and the first and second air flow controllers 1 03 5 Α ', 1 03 5 Β ', via the gas delivery line 1 03 8 ( Only a portion thereof) is provided to supply the gas to the gas ring plenum 1036 in the gas ring 1 03 7 . The gas ring 1037 has a plurality of source gas nozzles 1039 (only one of which is illustrated) to provide a uniform gas flow over the substrate. The nozzle length and nozzle angle can be varied to adjust the gas's uniform distribution curve and gas utilization efficiency according to the specific process in each chamber. In a preferred embodiment, the gas ring 107 7 has a gas nozzle made of 12 alumina ceramics.

The xenon ring 1 03 7 also has a plurality of oxidant gas nozzles 1 040 (only one of which is shown). In a preferred embodiment, the oxidant gas nozzles 1 040 are coplanar with the source gas nozzles 1039 and are larger than the source gas nozzles. It is short, and in one embodiment it receives gas from the main body plenum 104 1 . In some embodiments, it is preferred not to mix the source gas and the oxidant gas prior to injecting the gas into the process chamber 1 01. In other embodiments, by providing an opening (not shown) between the main body plenum 1041 and the gas ring plenum 1063, the oxidant gas is first mixed with before the gas is injected into the process chamber 1 01. Source gas. In one embodiment, the third, fourth, and fifth air sources 1034C, 1034D, 1034D1 and the third and fourth airflow controllers 1 03 5 C, 1 03 5D' provide gas to the body gas via the gas delivery line 1038. room. Other valves, such as 1043B (not shown other valves), can shut off the flow of gas from the airflow controller to the process chamber. In carrying out a particular embodiment of the invention, gas source 1 034A comprises a source of decane (SiH4), gas source 1 034B comprises a source of oxygen molecules (02), gas source 1 03 4C comprises a source of decane, and gas source 1 03 4D comprises a enthalpy The gas (He) source, gas source 1 034D' contains a source of hydrogen molecules (H2). 28 200832503 In embodiments using flammable, toxic or corrosive gases, it may be desirable to remove the gases remaining in the gas transfer line after deposition. For example, this can be accomplished by isolating process chamber 1 〇 1 3 from transfer line 1038A using a three-way valve (e.g., valve 1 04 3 B) and communicating transfer line 1038A to vacuum front line 1044. As shown in Figure 10A, other similar broad (eg, 1043A and 1043C) can be integrated into other gas delivery lines. These three-way valves can be placed as close as possible to the process chamber 1013 to minimize the volume of the non-vented gas delivery line (between the three-way valve and the process chamber). In addition, a bidirectional (switching) valve (not shown) may be provided between the mass flow controller (MFC) and the process chamber or between the gas source and the MFC. Referring again to Figure 10A, the processing chamber 1013 also has a top nozzle 1 〇 45 and a top vent 1046. Top nozzle 1045 and top vent 1 〇 46 allow independent control of the top and side flow of the gas, which improves film uniformity and allows for fine adjustment of deposition and doping parameters of the film. The top vent 1 〇 46 surrounds an annular opening of the top nozzle 1 045. In one embodiment, the first gas source 1 034A provides a source gas nozzle 109 9 and a top nozzle 1 〇 45. The nozzle MFC 1035A1 controls the amount of gas delivered to the source gas nozzle M39, and the top nozzle MFC 1 03 5A controls the amount of gas delivered to the top gas nozzle 1〇45. Similarly, two MFCs 1 03 5B and 1〇35Β can be used to control the flow of oxygen from a single oxygen source (e.g., source 1 034B) to overhead vent 1 046 and oxidant gas nozzle 1 040. In some embodiments, oxygen is not supplied to the processing chamber from any of the side nozzles. The gas flows into the processing chamber 1 〇, 丄 J < month, the contact-to-milk that can be supplied to the top nozzle 1 045 and the top vent 1046 can remain separated 'or in the gas flowing into the processing chamber 1 〇i 3 Previously, J was mixed with the gas in the top 29 200832503 gas chamber 1048. A plurality of separate gas sources for the same gas can supply gas to different components of the process chamber. A cleaning system that provides remote microwave-generated plasma 1 〇 5 〇 to periodically remove deposits from the chamber components. The cleaning system includes a remote microwave generator 1051 'which can be generated in the reaction chamber 105 using a purge gas source 103 4E (eg, 'fluorine molecule, tri-nitrogen, other fluorocarbon or equivalent) Denso. The reaction species produced by this electropolymerization are transferred to the processing chamber ι 13 via the purge gas feed inlet 1 054 using the supply pipe 1 055. The material used to hold the cleaning plasma (e.g., chamber 1 〇 53 and supply tube 1 〇 55) must be resistant to plasma attack. The distance between the reaction chamber 105 3 and the feed inlet 1 〇 54 should be as short as possible because the required plasma species concentration may decrease as the distance of the reaction chamber 1053 increases. In-situ generated plasma may have a glow discharge condition, while the generation of cleaning plasma in the remote chamber allows the use of an efficient microwave generator without subjecting the process chamber components to temperature, radiation, glow discharge, and the like. Therefore, relatively sensitive components (such as electrostatic chucks 1〇2〇) do not require the protection of blank wafers or other protective devices as in the in-situ plasma cleaning process. In Fig. 10A, it is shown that the plasma cleaning system 1050 is disposed above the processing chamber 1013, but may be disposed at other locations. A baffle 1 0 6 1 may be provided adjacent the top nozzle to direct the source gas flow provided by the top nozzle to the processing chamber and to direct the plasma generated at the distal end. The source gas supplied by the top nozzle 1 045 is guided into the processing chamber through the center channel 1 062, while the remotely generated plasma species provided by the cleaning gas feed inlet 1054 is guided to the processing chamber by the baffle 1061. Multiple sides of 3. 30 200832503 Embodiment In Table 1, a specific formulation example in which a carbon film can be deposited in accordance with an embodiment of the present invention is shown. Table 1: Demonstration recipe time /r/r Flow valve RF power (Watt) Carrier gas flow C2H4 Flow number (seconds) Source power bias power (seem) (seem) 1 15.0 Close 0 + 0 0 600 Argon 0 2 1.0 Off 0+4000 0 200 Argon 0 3 2.0 Open 15% 2000+2000 0 200 Argon 100+100 氦0 4 60.0 Open 4000+7000 0 100 Argon 0+250 氦0 5 1.0 Open 10+10 0 0+250 氦100 6 1.0 Open 10+10 0 0+500 氦200 7 1.0 Open 10+10 600 0+500 氦200 8 3.0 Open 2000+2000 500 0+500 氦200 9 125.0 .Open 3000+0 2400 0+200 氦450 10 5.0 Open 2000+1000 0 50 Argon 200+80 氦0 11 10.0 Open 2000+1000 0 50 Argon 200+80 氦 0

In this table, the first straight line indicates the step number in the process recipe; the second straight line indicates the maximum execution time of the step; the third straight line indicates the degree of opening of the throttle valve 1 026; and the fourth and fifth straight lines indicate the The applied source power and bias RF power; the sixth straight line indicates the carrier gas flow rate; the last line indicates the ethylene (C 2 Η 2 ) flow rate, and ethylene is the precursor in this embodiment. Ethylene has a double bond between two carbon atoms. In the case of source RF power, the two numbers are separated by a "+" sign; the first number indicates the side RF power provided and the second number indicates the top RF power provided. In a similar manner, the helium carrier airflow is represented by two numbers, these two numbers 31

200832503 is also separated by a "+" sign. The first number indicates the flow from the source of the source. The second number indicates the flow rate through the top source. In this embodiment, the substrate is placed in step 1 and the chamber is pressurized after the section is closed, and the plasma is produced in step 2. After the throttle valve of step 3, plasma heating is performed on the substrate in step 4. The flow of the deposition gas begins in step 5, and the gas is increased in step 6 and the deposition plasma is formed in step 7. Depositing a liner in step 8 performs a substantial deposition of the carbon film in step 9. The bias is turned off in steps 10 and 1 and the substrate is taken out. Carbon thin films deposited in accordance with embodiments of the present invention exhibit high extinction (i.e., k^0.3), making such carbon films suitable for use in blasting electromagnetic radiation in annealing applications. When a gap is formed between adjacent structures on the substrate, the film also exhibits good gap filling characteristics, thereby forming substantially non-porous deposition. One of the scanning electron microscope (SEM) photographs in Fig. 11 shows an amorphous carbon film on a 200 mm substrate using the above method. Optical testing of the deposited film revealed an extinction coefficient of greater than 0.3 at 63 3 nm. Other test experiments have also confirmed that the method of the present invention is capable of obtaining an extinction coefficient greater than 〇3 in a larger wavelength, as provided in Figure 12, which is capable of producing a uniform high extinction coefficient over a wide range of wavelengths in this wavelength range. The ability of a film with a slow extinction coefficient to allow for the use of broadband, narrowband or substantially monochromatic in the annealing process, as would be understood by those of ordinary skill in the art, can be directed to the processing chamber and different processing conditions. Changing the specific parameters without the back speed, the flow valve is opened in the step speed, 塾, ί, the coefficient is exposed to the thin gap, and the deposition wavelength range is shown. And invented b source. The same place from the spirit of this invention 32 200832503. Those skilled in the art will also be aware of other variations. These equivalent and alternative embodiments are also encompassed within the scope of the invention. Therefore, the scope of the invention should not be limited to the described embodiments but should be defined by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a typical structure of a transistor;

2 is a temperature characteristic curve of peak annealing used in a specific embodiment of the present invention; FIG. 3 is a flowchart summarizing a method of manufacturing a microelectronic element on a substrate in an embodiment of the present invention; A method for depositing an absorbent carbon film on a substrate in an embodiment of the present invention is summarized; FIG. 5 is a schematic diagram showing a flow rate time characteristic of a carrier gas, which is supplied in the method of FIG. 4 of the specific embodiment. To a substrate processing chamber having a precursor; FIGS. 6 and 6 are graphs showing the time characteristics of the electrical bias applied to a substrate during the method of FIG. 4 in the specific embodiment; The figure summarizes a first set of methods for depositing a liner, which may be part of the method of Figure 4; Figure 8 is a flow chart summarizing a second set of methods for depositing a liner, the methods As part of the method of Figure 4; Figure 9 is a flow chart summarizing the third set of methods for depositing a liner, which can be used as part of the method of Figure 4; Figure 10 is a high-density plasma chemistry Vapor deposition system DETAILED DESCRIPTION OF THE INVENTION 33 A simplified diagram of an example of a method of 200832503; a 10B diagram is a simplified cross-sectional view of a gas ring that can be used in conjunction with the exemplary processing system of Figure 1A; Figure 11 is a method of using the method of the present invention on a substrate A scanning electron microscope image of a deposited carbon film; and FIG. 2 provides a wavelength-dependent measurement of the extinction coefficient of the carbon film deposited by the method of the present invention. [Main component symbol description] 100 typical transistor I 0 8 drain II 6 substrate 1 0 1 3 processing chamber 1016 plasma processing area 1 0 1 8 substrate supporting member 1 020 electrostatic chuck 1 022 main body member 1 024 cooling plate 1 026 double vane throttle valve 1 0 4 source 1 1 2 gate 1010 HDP-CVD system 1 0 1 4 chamber top 1 0 1 7 substrate

L 1 〇1 9 Substrate receiving part 1021 Base part 1 0 2 3 Heating plate 1 025 Throttle wide body 1027 Gate valve 1 028 Turbo molecular pumping 1 029 Top coil 1 0 3 0 Side coil 1 〇 3 1 A Top source RF Generator 1031B Side SRF Generator 1031C Bias RF Generator 1 032A Matching Network 1 032B Matching Network 1 03 2C Bias Matching Network 1 03 3 Air Supply System 1034A-1034E Air Source 34 200832503 1 0 3 5 A- 1 0 3 5 E air flow controller 1 0 3 6 gas ring air chamber 1 0 3 7 gas ring 1 0 3 9 source gas nozzle 1041 main body air chamber 1044 vacuum front line 1 046 top exhaust port 1 050 plasma cleaning system 1 0 5 3 reaction chamber 1 0 5 5 supply tube 1 0 5 7 upper loading position 1 0 6 2 center channel 1 080A bias plasma system 1 03 8 gas delivery line 1 040 oxidant gas nozzle 1 043 valve 1 045 top nozzle 1 048 top air chamber 1 0 5 1 remote microwave generator 1 054 gas feed inlet 1 0 5 6 lower processing position 1061 deflector 1 070 vacuum system 1 0 80B bias plasma system

35

Claims (1)

200832503 X. Patent Application Range: 1. A method for depositing an amorphous carbon film on a substrate, the method comprising: adjusting a substrate processing chamber to deposit the adjusting material on an inner surface of the substrate processing chamber, Transferring the substrate to the adjusted substrate processing chamber; Ο flowing a heating gas into the adjusted substrate processing chamber; forming a first plasma from the heating gas in the substrate processing chamber, wherein the first plasma causes the conditioning material to be deposited on the substrate to As a liner; subsequently, a carbon precursor is flowed into the substrate processing chamber; a second plasma is formed from the carbon precursor in the substrate processing chamber; and the amorphous is deposited on the liner by the second plasma Carbon film. 2. The method of claim 1, wherein: the conditioning material comprises carbon; and the blanket comprises a carbonium. 3. The method of claim 1, wherein: the conditioning material comprises nitrogen; and the liner comprises a nitrogen liner. 4. The method of claim 1, further comprising preheating the substrate before transferring the substrate 36 200832503 to the substrate processing chamber. 5. The method of claim 1, wherein: the carbon precursor may comprise a hydrocarbon precursor; and the amorphous carbon film comprises hydrogen. 6. The method of claim 1, further comprising flowing a nitrogen into the substrate processing chamber having the carbon precursor, wherein: the step of forming the second plasma comprises the carbon precursor and Nitrogen forms the second plasma; and the amorphous carbon film contains nitrogen. 7. The method of claim 1, further comprising flowing a inclusion into the substrate processing chamber having the carbon precursor. 8. The method of claim 1, further comprising loading the substrate into the substrate processing chamber having the carbon precursor. 9. The method of claim 1, further comprising applying an electrical bias to the substrate when depositing the crystalline carbon film. The method of claim 1, wherein the step of electrically biasing the substrate comprises: applying a pre-driver precursor oxygen gas flow to the non-application during the initial stage of depositing the amorphous carbon film on the substrate A 37 200832503 initial electrical bias to the substrate, wherein the initial bias is lower than a steady state bias; increasing the electrical bias from the initial electrical bias to a maximum electrical bias exceeding a steady state bias And reducing the electrical bias from the maximum electrical bias to the steady state bias before the substrate temperature rises above 500 °C. 11. The method of claim 1, wherein the step of forming the second plasma comprises inducing formation of the second plasma as a high density plasma having a density greater than 101 2 ions per cubic centimeter. 1. The method of claim 1, wherein the deposited amorphous carbon film has an extinction coefficient greater than 0 · 3 at a wavelength of 81 nm. 38 1 3 . A method for depositing an amorphous carbon film on a substrate, the method comprising: transferring the substrate into a substrate processing chamber; 2 outside the substrate processing chamber having a remote plasma system The first precursor forms a first electricity; the ionic species from the first plasma flows into the substrate processing chamber to deposit a liner on the substrate; and then a second precursor is flowed into the substrate processing chamber. Wherein the second precursor comprises carbon; in the substrate processing chamber, a plasma is formed from the second carbon precursor; and 200832503 deposits the amorphous carbon film on the liner using the second plasma. 14. The method of claim 13 wherein: the first precursor comprises carbon; and the liner comprises a carbon liner. The method of claim 13, wherein: the first precursor comprises nitrogen; and the blanket comprises a gas. The method of claim 13, further comprising preheating the substrate prior to transferring the substrate to the substrate processing chamber. The method of claim 13, wherein: the second precursor further comprises hydrogen, and the amorphous film comprises hydrogen. The method of claim 13, further comprising flowing a third precursor into the substrate processing chamber having the second precursor, wherein: the third precursor comprises nitrogen; The step of forming the second plasma includes forming the third plasma from the second and third precursors; and the amorphous carbon film comprises nitrogen. 19. The method of claim 13, further comprising flowing an oxygen-containing 39 200832503 gas into the substrate processing chamber having the second precursor. 20. The method of claim 13 further comprising flowing a carrier gas into the substrate processing chamber having the carbon precursor. 2 1. The method of claim 13, further comprising applying an electrical bias to the substrate when depositing the " amorphous carbon film. 22. The method of claim 21, wherein the step of applying the electrical bias to the substrate comprises: applying an initial electrical bias at an initial stage of depositing the amorphous carbon film on the substrate In the substrate, wherein the initial bias voltage is lower than a steady state bias voltage; the electrical bias voltage is increased from the initial electrical bias voltage to a maximum electrical bias voltage exceeding the steady state bias voltage; and 'at the substrate temperature The electrical bias is reduced from the maximum electrical bias to the steady state bias before being raised above 500 °C. U 2 3. The method of claim 13, wherein the step of forming the second plasma comprises inducing formation of the second plasma into a high density electricity having a density greater than 1011 derivations, sub/cubic centimeters Pulp. 24. The method of claim 12, wherein the deposited amorphous carbon film has an extinction coefficient greater than 0.3 at a wavelength of 81 nm. 40 200832503 25. A method for depositing an amorphous carbon film on a substrate, the method comprising: transferring the substrate into a substrate processing chamber; applying an electrical bias to the substrate; and placing a first carbon precursor Flowing into the substrate processing chamber; establishing a pressure greater than 100 mTorr in the substrate processing chamber; Using the bias voltage to form a first plasma from the first carbon precursor, wherein a source power for forming the plasma is less than 500 watts; depositing a liner on the substrate using the first plasma; : reducing the pressure in the substrate processing chamber to less than 50 mTorr; flowing a second carbon precursor into the substrate processing chamber; in the case of a source power exceeding 1 watt, the second carbon The precursor induces a second plasma, wherein the second plasma is a high density plasma having a density greater than 1011 ions/cm 3 ; and depositing the amorphous carbon film on the liner using the second plasma. The method of claim 25, further comprising preheating the substrate prior to transferring the substrate to the substrate processing chamber. The method of claim 25, wherein: the second carbon precursor comprises a hydrocarbon precursor; and the amorphous carbon film comprises hydrogen. The method of claim 25, further comprising flowing a nitrogen precursor into the substrate processing chamber having the second carbon precursor, wherein: the second carbon precursor is induced to form the first The second plasma step comprises forming the second plasma from the second carbon precursor and the nitrogen precursor; and the amorphous carbon film comprises nitrogen. 29. The method of claim 25, further comprising flowing an oxygen-containing gas into the substrate processing chamber having the second carbon precursor. 30. The method of claim 25, further comprising flowing a carrier gas into the substrate processing chamber having the carbon precursor. The method of claim 25, further comprising applying a second electrical bias to the substrate when depositing the amorphous carbon film. 3. The method of claim 25, wherein the deposited amorphous carbon film has an extinction coefficient of greater than 0.3 at a wavelength of 81 nm. 33. A method for activating a dopant in a doped semiconductor substrate, the method comprising: flowing a carbon precursor into a substrate processing chamber, wherein the doped semiconductor substrate is placed in the substrate processing chamber; Forming a plasma from the carbon precursor in the substrate processing chamber; depositing a carbon film on the substrate with the plasma; 42 200832503, when depositing the carbon film, keeping the substrate temperature below 500 ty: And exposing the deposited carbon film to a time shorter than 10 milliseconds under electromagnetic radiation, and wherein the deposited carbon film has an extinction coefficient greater than 0.3 at a wavelength included in the electromagnetic radiation. 3. The method of claim 3, wherein the electromagnetic radiation is substantially monochromatic. The method of claim 3, wherein: the electromagnetic radiation comprises a wavelength band; and the extinction coefficient of the carbon film is greater than 0.3 at each wavelength in the wavelength band. 3. The method of claim 33, wherein the step of exposing the deposited carbon film to the electromagnetic radiation comprises simultaneously exposing the surface of the deposited carbon film substantially to the electromagnetic radiation. 3. The method of claim 3, wherein the exposing the deposited carbon film to electromagnetic radiation comprises: shaping the beam of electromagnetic radiation into a shape; and scanning the beam of electromagnetic radiation of the shape The surface of the carbon film is deposited to substantially cover the entire surface. 3. The method of claim 3, further comprising removing the deposited carbon film from the substrate 43 200832503. 39. The method of claim 38, wherein the step of removing the deposited carbon film comprises exposing the substrate to an oxygen plasma. 40. The method of claim 33, wherein: the carbon precursor can comprise a hydrocarbon precursor; and the deposited carbon film comprises hydrogen. The method of claim 3, further comprising flowing a nitrogen precursor into the substrate processing chamber having the carbon precursor, wherein: the step of forming the plasma comprises the carbon precursor and The plasma is formed from the nitrogen precursor; and the deposited carbon film contains nitrogen. 42. The method of claim 3, further comprising flowing an oxygen-containing gas into the substrate processing chamber having the carbon precursor. 43. The method of claim 3, further comprising flowing a carrier gas into the substrate processing chamber. 44. The method of claim 43, wherein the carrier gas is argon or gas molecules. 44 200832503 wherein a carrier gas flow 45 is applied to the substrate processing chamber as described in claim 43: the flow rate is injected into the carrier gas; and at the beginning, at a lower than steady cancer flow rate After a portion of the carbon film has accumulated on the substrate, the flow rate is increased to the steady state flow rate. 46. The method of claim 33, wherein the step of maintaining the temperature of the substrate comprises: maintaining the substrate temperature below 400 ° C when depositing the carbon film. The method of claim 3, wherein the step of maintaining the temperature of the substrate comprises: flowing a coolant into the vicinity of the back side of the substrate in the substrate processing chamber. a method for activating a dopant in a doped semiconductor substrate, the method comprising: ??? flowing a carbon precursor into a substrate processing chamber, wherein the doped semiconductor substrate is placed on the substrate Processing the chamber; processing the substrate to the inside to form a high-density electricity generation by the driving, wherein the density of the high-density plasma is greater than 1011 ions/cm 3 ; applying an electrical bias to the substrate; Providing a process for depositing and sputtering components, depositing a carbon film on the substrate using a high-density plasma; and displacing the film with a burst of electromagnetic radiation for less than 1 〇 milliseconds 45 200832503 And wherein the deposited carbon film has an extinction coefficient greater than 0.3 at a wavelength included in the electromagnetic radiation. 4. The method of claim 48, wherein the electromagnetic radiation is substantially monochromatic. 50. The method of claim 48, wherein: the electromagnetic radiation comprises a wavelength band; and the extinction coefficient of the carbon film is greater than 0.3 at each of the wavelength bands. The method of claim 4, wherein the step of exposing the deposited carbon film to the electromagnetic radiation comprises simultaneously exposing the surface of the deposited carbon film to a substantially substantial overall exposure to the electromagnetic radiation. 5. The method of claim 4, wherein the step of exposing the deposited carbon (the J film to electromagnetic radiation comprises: molding the beam of the electromagnetic radiation into a shape; and ^ scanning the beam of the shape) A surface of the deposited carbon film is substantially covered by the entire surface. 53. The method of claim 48, further comprising removing the deposited carbon film from the substrate. 46 200832503 54. The method of claim 53, wherein the step of removing the deposited carbon film comprises exposing the substrate to an oxygen plasma. The method of claim 4, wherein: the precursor comprises a hydrocarbon precursor; and the deposited carbon film comprises hydrogen. 56. The method of claim 48, further comprising flowing a carrier gas into the substrate processing chamber. 57. The method of claim 56, wherein the step of flowing a carrier gas into the substrate processing chamber comprises: initially injecting the carrier gas at a flow rate below a steady state flow rate; After the carbon film has been deposited on the substrate, the flow rate is increased to the steady state flow rate. 5. The method of claim 4, further comprising maintaining the temperature of the substrate below 500 ° C during deposition of the carbon film. The method of claim 4, wherein the applying the electrical bias to the substrate comprises applying a substantially constant electrical bias to the carbon film deposited on the substrate The substrate. The method of claim 48, wherein the step of applying the electrical bias to the substrate 47 200832503 comprises: applying an initial charge to the initial stage of depositing the carbon thin film on the substrate Biasing the substrate, wherein the initial bias is lower than a steady state bias; increasing the electrical bias from the initial electrical bias to a maximum electrical bias that exceeds a self-steady bias; and The electrical bias is reduced from the maximum electrical bias to the steady state bias before the temperature rises above 500 °C. 61. A method of activating a dopant in a doped semiconductor substrate, the method comprising: flowing a hydrocarbon precursor into a substrate processing chamber, wherein the doped semiconductor substrate is placed in the substrate processing chamber; Carrying a carrier gas into the substrate processing chamber; forming a high-density plasma from the hydrocarbon precursor and the carrier gas in the substrate processing chamber, wherein the density of the high-density plasma is greater than 1011 ions/cm 3 ; Applying to the substrate; depositing a carbon film on the substrate using the high-density plasma by using a process of simultaneously providing a deposition and sputtering component; by flowing a near the back side of the substrate during deposition of the carbon film a coolant to maintain the substrate temperature below 400 ° C during deposition of the carbon film; exposing the deposited carbon film to electromagnetic radiation for less than 1 〇 milliseconds, and wherein the deposited carbon film is at the electromagnetic radiation Included at a wavelength 48 200832503 having an extinction coefficient greater than 0.3; and removing the deposited carbon thin from the substrate by exposing the substrate to an oxygen plasma . 62. The method of claim 61, wherein the step of flowing a carrier gas into the substrate processing chamber comprises: V injecting the carrier gas at a flow rate lower than a steady state flow rate at the beginning; After a portion of the carbon film has been deposited on the substrate, the flow rate is increased to the steady state flow rate. 63. The method of claim 61, wherein the step of applying the electrical bias to the substrate comprises: applying an initial electrical bias to the substrate at an initial stage of depositing the carbon film on the substrate Where the initial bias voltage is lower than a steady state bias voltage; 'the electrical bias voltage is increased from the initial electrical bias voltage to a maximum electrical bias voltage exceeding the steady state bias voltage; and the substrate temperature rises to The electrical bias is reduced from the maximum electrical bias to the steady state bias before greater than 4,000 °C. 49