200830377 九、發明說明： f 【發明所屬之技術領域】 本發明係關於使用適合於液晶裝置或半導體裝置等 之電子裝置之製造的電漿反應爐處理系統的電子裝置 之製造方法。 【先前技術】 此種電漿反應爐處理系統係具備：製程室，係內部設 置有電漿產生器（例如，平行平板型電極方式、微波天 • 線方式等）；惰性氣體之供給管路，係連結1種或2種以 上之惰性氣體源（例如，Ar、Kr、Xe等等）的各方與製程 室；製程氣體之供給管路，係用以連結1種或2種以上 之製程氣體源（例如，Η 2、0 2、N F 3、C12、S i G14、Η B r、 SF6、C5F8、CF4等等）的各方與製程室；及室內氣體之 排出管路，係用以連結製程室與排氣泵。 在各惰性氣體及各製程氣體之供給管路的各管路上 0 分別介設有可將流動於此管路中之氣體的流量調整成 所設定之値的流量調整器，同時在室內氣體之排出管路 上介設有壓力控制器，其具有朝所供給之壓力設定値與 經由壓力測量部所測量之壓力測量値的偏差減少之方 向，自動變更流量控制閥之開度的功能。 但是，在此種電漿反應爐處理系統中，在製程之開始 時、製程之途中、製程之結束時，需要變更製程室內之 環境氣體的濃度。例如，在製程之開始時’需要進行從 惰性氣體（稀釋氣體）之單獨環境氣體’朝惰性氣體與1 200830377 種或2種以上之製程氣體的混合環境氣體的濃度變更。 另外，在製程之途中，亦有需要進行從惰性氣體與製程 氣體之某濃度的混合環境氣體，朝另一濃度的混合環境 氣體或氣體種類不同之混合環境氣體的濃度變更之情 況。又，在製程之結束時，需要進行從惰性氣體與製程 氣體之混合環境氣體，朝惰性氣體之單獨環境氣體的濃 度變更。 一般而言，此濃度變更係藉由對介設於各成份氣體之 供給管路的各管路上之流量調整器供給新的流量設定 値來實現。以往，作爲此種目的所使用之流量調整器， 係採用在氣體剛供給開始後不久容易產生過剩流量之 溫度分布式者，所以，具有需要花費時間才能將製程室 內之壓力調整成一定的問題。 上述問題點係藉由採用壓力控制型流量調整器作爲 流量調整器來加以解決（參照專利文獻1)。即，壓力控 制型流量調整器係具有朝所供給之流量設定値與對應 於經由壓力測量部所測量之流體壓力的流量檢測値的 偏差減少之方向，自動變更流量控制閥之開度的功能， 所以剛開始供給氣體後不久即可獲得如流量設定値之 流量。 另一方面，即使採用壓力控制型流量調整器作爲流量 調整器，當對各成份氣體之流量調整器供給新的流量設 定値以使流量變化時，即使在製程室內氣體之排出管路 200830377 上介設有壓力控制器，仍會有在製程室內產生較大之壓 : 力變動的問題。 上述問題點可藉由被介設於製程室內氣體之排出管 路上的開度可變型流體控制閥或排氣速度可變型排氣 泵，並與壓力控制型流量調整器的流量變更連動，利用 瞬間變更（增大）排氣量來加以解決（參照專利文獻2)。 [專利文獻1]特開2000-200780號公報 [專利文獻2]特開2002-203795號公報 瞻 【發明內容】 (發明所欲解決之課題） 然而，在專利文獻2所記載之使用電漿反應爐處理系 統的電子裝置之製造方法中，因易流動性及易排氣性係 依每一氣體之種類而異，所以，即使與由壓力控制型流 量調整器產生的流量變更連動，並瞬間變更排氣量，仍 會有無法完全吸收因由壓力控制型流量調整器產生之 流量變更引起的製程室內之壓力變動的問題點。 • 本發明係著眼於上述之問題點而進行者，其目的在 於，提供一種使用電漿反應爐處理系統的電子裝置之製 造方法，其在製程之開始時、製程之途中、製程之結束 時等等，可瞬間改變製程室內之環境氣體的濃度，且能 以高生產性、低成本來實現液晶裝置或半導體裝置之生 產所必要的電漿反應處理製程。 有關本發明之其他目的及作用效果，藉由參照說明書 中之下述記載，凡熟悉本行業者均應能容易理解。 200830377 (解決課題用之手段） 上述發明所欲解決之課題，可藉由使用由如下構成所 形成的電漿反應爐處理系統的電子裝置之製造方法來 解決。 亦即，此電子裝置之製造方法所適用的電漿反應爐處 理系統係具有：製程室（電漿反應爐本體），係內部設置 有電漿產生器；惰性氣體之供給管路，係用以連結1種 或2種以上之惰性氣體源的各方與製程室；製程氣體之_ 供給管路，係用以連結1種或2種以上之製程氣體源的 各方與製程室；及室內氣體之排出管路，係用以連結製 程室與排氣泵。 本發明具有第1步驟，係在此種電漿反應爐處理系統 中，爲了變更製程室內之製程氣體的濃度，而對介設於 各成份氣體之供給管路上的前述壓力控制型流量調整 器供給新的流量設定値，且在該第1步驟，將對各流量 調整器所供給之新的各個流量設定値，設定爲在濃度變 更之前後以總流量値成爲相同的條件，藉由從假定之變 更後的製程氣體濃度逆算所求出之値。 加上，在室內氣體之排出管路上介設壓力控制器，其 具有朝所供給之壓力設定値與經由壓力測量部所測量 之壓力測量値的偏差減少之方向，自動變更流量控制閥 之開度的第1動作模式。 若根據此種構成，在製程氣體之濃度變更時，將對被 介設於各成份氣體之供給管路上之流量調整器所供給 之新的流量設定値，設定爲在濃度變更之前後以總流量 200830377 値成爲相同的條件，藉由從假定之變更後的製程氣體濃 度逆算所求出之値，所以，即使藉由介設於各成份氣體 之供給管路上之流量調整器來進行流量變更，因流量變 更部分被相互抵消，而在製程室內不會產生壓力變動、 或是、即使產生壓力變動，其亦僅停留在微小値。因此， 若爲此程度之壓力變動的話，介設於製程室內氣體之體 排出管路上的壓力控制器進行作用，可馬上穩定室內壓 力之變動。 在較佳之實施形態中，在該第1步驟，在對各流量調 整器所供給之新的各個流量設定値之上，僅在從變更開 始起的指定之第1微少時間，針對變更後減少之成份氣 體，加上減少方向的超過量，針對變更後增加之成份氣 體，加上增加方向的超過量，且設定爲使減少方向之超 過量總量與增加方向的超過量總量成爲相等。此時，以 第1微少時間係2秒以下爲較佳。 若根據此種構成，僅在從變更開始起的指定之微少時 間，各流量調整器之流量値係隨超過目的之增加目標値 而增加，或是隨超過目的之減少目標値而減少，所以， 即使在製程室之容量較大的情況，製程室內環境氣體之 濃度仍可從濃度變更開始迅速地到達目標濃度，然後被 調整而穩定。而且，即使在流量超過之期間，因爲將減 少方向之超過量總量與增加方向的超過量總量設定成 爲相等，所以，該等之超過總量間被相互抵消，而不會 影響到壓力變動。 在本發明之又一較佳實施形態中，被介設於該室內氣 200830377 體之排出管路上的壓力控制器，更具有朝所供給之開度 設定値與開度現値的偏差減少之方向，自動變更流量控 制閥之開度的第2動作模式，且，更具有第2步驟，係 僅在從變更開始起的指定之第2微少時間，將介設於該 排出管路上的壓力控制器，從該第1動作模式轉換爲該 第2動作模式，且，供給爲了緩和剛變更後之壓力變動 而由經驗所求得之閥開度設定値。此時，以第2微少時 間係3秒以下爲較佳。 φ 若根據此種構成，即使將對介設於各成份氣體之供給 管路上之流量調整器所供給之新的流量設定値，設定爲 在濃度變更之前後以總流量値成爲相同的條件，藉由從 所假定之變更後的製程氣體濃度逆算所求出之値，且因 依每一氣體種類之易流動性的差異或易排氣性的差 異，而在製程室內產生有壓力變動的情況，因介設於排 出管路上的壓力控制器，僅在從變更開始起的指定之微 少時間，從第1動作模式轉換爲第2動作模式，同時供 0 給爲了緩和變更後不久之壓力變動而由經驗所求得之 閥開度設定値，所以，針對此種氣體種類引起之壓力變 動，利用瞬間追蹤閥開度，便可瞬間被緩和。 本發明之製造裝置的特徵之製程氣體之濃度變更，當 然可適用製程開始時、製程途中、或製程結束時之製程 氣體的濃度變更的任一方。 如此，在本發明中，因爲可將導入反應爐內之製程氣 體馬上加以電漿化而運用於電漿反應處理，所以，可提 高製程氣體之利用效率，降低該部分之製造成本。此 -10 - 200830377 外，亦可大幅減少反應處理開始前之等待時間，所以， 亦可藉由工程之 TAT(Turn-Around Time)的縮短化而提 高生產性。 另外，可與電漿反應處理之完成同時馬上停止製程氣 體的供給，然後迅速對電漿產生器發出電漿產生停止指 令，所以，可防止對電漿反應無貢獻之製程氣體被無端 地使用，通過提高製程氣體之利用效率，而可達成製造 成本之降低。 另外，因爲反應處理結束後之等待時間亦可大幅減 # 少，所以，亦可藉由工程之TAT(Turn-Around Time)的縮 短化而提高生產性。 另外，所供給之製程氣體馬上運用於電漿反應處理， 所以，在電漿反應處理開始時，不會無端地浪費電力， 藉此，可提高生產性且節省製程氣體，且通過電力能源 之節省，可最大限度地追求低成本化。 又，因爲與電力被截止而結束電漿反應處理之同時亦 停止製程氣體之供給，所以不會無端地消費電力，藉 ^ 此，可提高生產性且節省製程氣體，且通過電力能源之 節省，可最大限度地追求低成本化。 (發明效果） 若根據本發明，在製程氣體之濃度變更時，將對被介 設於各成份氣體之供給管路上之流量調整器所供給之 新的流量設定値，設定爲在濃度變更之前後以總流量値 成爲相同的條件，藉由從假定之變更後的製程氣體濃度 逆算所求出之値，所以，即使藉由被介設於各成份氣體 -11- 200830377 量變 動， 此， 體之 內壓 使用 個較 同圖 11， ，係 Ar、 係用 、〇2、 與製 室1 的各 能之 流量 壓力 制閥 之供給管路上之流量調整器來進行流量變更，因流: 更部分被相互抵消，而不會在製程室內產生壓力變 或是，即使產生壓力變動，其亦僅停留在微小値。因 若爲此程度之壓力變動的話，被介設於製程室內氣 排出管路上的壓力控制器進行作用，可馬上穩定室 力之變動。 【實施方式】 以下，一邊參照添附圖式一邊詳細說明本發明之 A 電漿反應爐處理系統的電子裝置之製造方法的一 佳實施形態。 第1圖爲顯示電漿反應爐系統之整體構成圖。如 所示般，此電漿反應爐處理系統1 00係具有：製程室 係內部設置有電漿產生器1 a ;惰性氣體之供給管路 用以連結1種或2種以上之惰性氣體源（本例中爲 Kr、Xe)的各方與製程室1 ;製程氣體之供給管路， 以連結1種或2種以上之製程氣體源（本例中爲H2 NF3、C12、SiC14、HBr、SF6、C5F8、CF4)的各方 ® 程室1 ;及室內氣體之排出管路，係用以連結製程 與排氣泵（Pump)5。 在惰性氣體之供給管路及製程氣體之供給管路 管路上介設具有作爲壓力控制型流量調整器的功 流量控制系統（以下稱爲F C S )’其具有朝所供給之 設定値與對應於經由壓力測量部所測量出之流體 的流量檢測値的偏差減少之方向，自動變更流量控 之開度的功能。 -12- 200830377 若更爲具體地說明，Ar氣體之供給管路係被分歧成 朝向上段射叢板之導入用口 2的第1供給管路、及朝向 下段射叢板之導入用口 3的第2供給管路。並在第1供 給管路上介設手動閥Μ V 1 1、F C S 1 1及具有作爲止閥機 能的電磁閥S V1 1，而在第2供給管路上介設手動閥 MV9、FCS9、電磁閥SV9。因此，利用操作FCS11及/ 或FCS9之流量設定値，可控制Ar氣體的流量。 有關Kr氣體及Xe氣體之供給路徑亦相同。因此，利 φ 用操作FCS10及/或FCS8之流量設定値，可控制Κι:氣 體或Xe氣體的流量。 H2氣體之供給管路係直接與朝下段射叢板之氣體導 入用口 3連接，在此管路上介設手動閥MV7、FCS7、電 磁閥SV7。因此，利用操作FCS7之流量設定値，可控 制H2氣體的流量。 有關ΗΒι:氣體、SF6氣體及C5F8氣體之供給管路亦 相同。因此，利用操作FCS2或FCS3之流量設定値，可 ^ 控制HBr氣體、SF6氣體及C5F8氣體的流量。 02氣體之供給管路係經由手動閥MV6、FCS6、電磁 閥SV6之後，被分歧成朝向上段射叢板之導入用口 2的 第1供給管路、及朝向下段射叢板之導入用口 3的第2 供給管路。並在第1供給管路上介設手動閥MV62，而 在第2供給管路上介設手動閥MV61。因此，利用操作 FCS6之流量設定値，可控制02氣體的流量。 有關NF3氣體、C12氣體、SiC14氣體之供給管路亦 相同。因此，利用操作FCS5或FCS4之流量設定値，可 -13- 200830377 控制NF3氣體、C12氣體、SiC14氣體的流量。 第2 (a)圖爲顯示具有作壓力控制型流量調整器的功 能之F C S的槪略構成圖。如同圖所示般，f C S具有控制 部5 1、控制閥5 2、壓力測量部53及開口54。在控制部 51內，雖有省略圖示’但其包含有放大電路、流量運算 電路、比較電路、閥驅動電路（參照特開2003-203789、 第3圖）。壓力測量部53之測量信號係由放大電路放大 之後，由流量運算電路轉換爲對應之流量檢測信號。此 φ 流量檢測信號係由比較電路與流量設定信號進行比 較，求取該些之偏差信號。閥驅動電路係朝該偏差信號 之値減少的方向來控制控制閥5 2的開度。 此FCS係利用若上游之壓力P1爲下游之壓力P2的2 倍以上的話，流體成爲音速區域，而與上游側之壓力成 比例的所謂原理者，因爲藉由調整上游之壓力P1來控 制流量，所以，即使在氣體剛供給後之不久，亦可瞬間 供給目標之氣體流量。作爲具有此種功能之FSC，各廠 $ 商提供有各種的製品在市面上販售，作爲一例可舉出富 士 金 （Fujikin)股份有限公司製之型式 FCS-4WS-7 9 8 -F3L、型式 FCS-4WS-7 9 8 -F500、型式 FCS-4WS-79 8-F 1 600 等。 另一方面，在室內氣體之排出管路上介設具有作爲壓 力控制器之功能的自動壓力控制器（以下稱爲APC)4,其 具有朝所供給之壓力設定値與經由壓力測量部所測量 之壓力測量値的偏差減少之方向，自動變更流量控制閥 之開度的功能。 -14- 200830377 第2(b)圖爲顯示APC4之槪略構成圖。如同圖所示， APC係在內部設置控制部41及控制閥42。控制部41係 具有朝所供給之壓力設定値與經由裝設於製程室之壓 力測量部43所測量到之壓力測量値的偏差減少之方 向，自動變更流量控制閥42之開度的第1動作模式（壓 力設定模式）、及朝所供給之開度設定値與開度現値的 偏差減少之方向，自動變更控制閥42之開度的第2動 作模式（開度設定模式）。作爲具有此種功能之APC，各 ^ 廠商提供有各種的製品在市面上販售，作爲一例可舉出 VAT SKK VACUUM LTD公司製之型式控制器 PM-3、控 制閥 F61-87665-18 等。 第3圖顯示電漿產生器之構成例。作爲電漿產生器 1 a係可舉出平行平板型電極方式者、及微波天線方式 者。 平行平板型電極方式之電漿產生器，如第3(a)圖所示 般，係由平行平板型電極（由電漿激發電極112及電極 I 1 1 3所構成）、對此電極供給高頻電力用之RF電源7、 8 (參照第1圖）、供給製程用氣體等之射叢板115及收容 該等構件之室1 1 1所構成。並且，藉由利用平行平板電 極對所供給之製程用氣體施加高頻，使製程用氣體被激 發而成爲電漿狀態。另一方面，微波天線方式之電漿產 生器，如第3(b)圖所示般，其取代利用高頻電力，而從 由微波驅動電路1 1 7所驅動之微波天線1 1 6朝室1 1 1內 放射微波，以激發處理用氣體。在任一之電漿產生器 中，藉由將電漿電源（RF電源7、8或微波電源6等等） -15- 200830377 加以導通或斷開，可控制電漿之產生或停止。 返回第1圖，電漿反應爐處理系統內所含之FCS1〜 11、電磁閥SV1〜SV11、APC4、微波電源6、RF電源7、 8之控制，在本例中係使用程控控制器（以下稱爲PLC) 9 來進行。PLC9係經由通信1 1而與具有作爲操作顯示部 的機能之程控終端機（以下稱爲PT) 10聯繋。 亦即，PLC9與FCS1〜FCS11之間，係經由包含DA/AD 單元之PLC介面9&所連接。？1^9與電磁閥3乂1〜3711 ^ 之間，係經由包含DO單元之PLC介面9b所連接。PLC9 與微波電源6之間，係經由包含DA/AD單元或DO/DI 單元之PLC介面9c所連接。PLC9與APC4之間，係經 由包含RS232C之PLC介面9d所連接。又，PLC9與RF 電源7、8之間，係經由包含DA/AD單元或DO/DI單元 之PLC介面9e所連接。並且，PLC9係經由用戶程式來 執行後述之第1 2圖的流程圖所示之製程，藉以實現本 發明之製造方法。 0 其次，說明本發明之使用電漿反應爐處理系統的電子 裝置之製造方法的主要部分之濃度變更控制。本發明方 法的特徵在於：採用在製程氣體之濃度變更時，將對介 設於各成份氣體之供給管路上的FCS (壓力控制型流量 調整器）所供給之新的流量設定値，設定爲在濃度變更 之前後以總流量値成爲相同的條件，藉由從假定之變更 後的製程氣體濃度逆算所求出之値。 第4圖爲顯示本發明之濃度變更控制的說明圖。若現 在假設濃度變更前之製程氣體濃度爲A1 (例如’ 0%)，製 -16 - 200830377 程氣體供給量爲F 1 1 (例如，0 s c c m)，惰性氣體供給量爲 F21(例如，420sccm)，並假設濃度變更後之製程氣體濃 度爲 A2(例如，24%)，製程氣體供給量爲F13(例如， lOOsccm)，惰性氣體供給量爲F23(例如，320sccm)時， 在本發明之濃度變更控制中，作爲對介設於各成份氣體 之供給管路上的FCS(壓力控制型流量調整器）所供給之 新的流量設定値（F13、F23)，係採用以在濃度變更之前 後總流量値成爲相同（？11+?21413#23 = 1〇爲條件，藉由 秦 從假定之變更後的製程氣體濃度（A2)逆算所求出之値 (F13 = A2xK、F23 = (l-A2)xK)。 若將依此所求出之流量設定値（F1 3、F23)供給各FCS 的話，在濃度變更之前後，室內總流量在原理上不會增 加，所以，在濃度變更時，製程室內之壓力不會有大變 動（增加），而可瞬間調整穩定室內壓力。 不過，若一律採用此種方法的話，考慮到在濃度變更 前後之各氣體的流量變動範圍受到限制，在因氣體種類 而引起之不易流動性或製程室之容量大的情況等，需花 ® 上時間才能達到目的之氣體濃度，其結果會在製程開始 時產生延遲。 因此，在本例中，對各個成份氣體之新的流量設定 値，僅在從變更開始起的指定之微少時間（△ t)，針對變 更後減少之成份氣體，加上減少方向的超過量（-△ F)， 針對變更後增加之成份氣體，加上增加方向的超過量（+ △ F)，同時設定爲使減少方向之超過量總量與增加方向 的超過量總量成爲相等。 -17- 200830377 又，只要滿足使減少方向之超過量總量與增加方向的 超過量總量成爲相等的條件，超過量便可由複數個脈波 來實現。作爲複數個脈波之一例，第5圖爲顯示超過量 爲2個脈波之情況的說明圖。在同圖中，各個成份氣體 之新的流量設定値，首先，在從變更開始起的指定之微 少時間（△ tl)內，針對變更後減少之成份氣體，加上減 少方向的超過量（_△ F 1 )，針對變更後增加之成份氣體， 加上增加方向的超過量（ + AF1)，同時設定爲使減少方向 φ 之超過量總量與增加方向的超過量總量成爲相等。又， 在其後之指定之微少時間（△ t2)內，亦針對變更後減少 之成份氣體，加上減少方向的超過量（-△ F2)，針對變更 後增加之成份氣體，加上增加方向的超過量（+ △ F2)，同 時設定爲使減少方向之超過量總量與增加方向的超過 量總量成爲相等。 根據此種超過量加法計算方式，僅在從變更開始起的 指定之微少時間（△ t)，將總流量持續地維持爲一定，而 0 對於各個氣體種類亦不會產生大的流量變動，所以，可 縮短到達目的之製程氣體濃度之時間。又，第5圖中之. U)顯示微小時間內之APC的開度。又，作爲指定之微 小時間（△ t)，雖亦依氣體之種類而定，但2秒以下爲適 宜。 其次，以具體之電漿反應爐處理系統爲例，說明根據 本發明之濃度變更控制（參照第4圖）的控制結果及根據 習知之濃度變更控制的控制結果。使用微波方式之電漿 產生器（參照第3(b)圖），藉由電漿激發蝕刻來蝕刻多晶 -18- 200830377 矽（poly-Si)膜。室容量爲53公升，室內氣體流量合計爲 42〇CC/min，氣體種類係設定製程氣體爲ΗΒι:，電漿激發 氣體爲惰性氣體之Ar。穩定狀態下之HBr、Ar的濃度 比，分別以24%、76%爲目標。另外，設定製程室內目 標壓力爲30mTorr，電漿產生用微波爲2.45 GHz，自發性 偏電壓用高頻爲13.56MHz，基板溫度爲20°C，製程處 理反應時間爲30秒。 第6圖顯示本發明之濃度變更控制（參照第4圖）使用 蠢 時的氣體濃度變化，第7圖顯示習知之濃度變更控制使 用時的氣體濃度變化。 在使用習知之濃度變更控制的情況，如第7圖所示 般，在時刻t21將電漿電源接通（ON)之後，在時刻t22 開始供給製程氣體，其後迄止於製程氣體之濃度被調整 穩定之時刻t23，約花費7秒之時間。因此，在此習知 例中，在製程氣體供給開始後，接通RF電源至開始製 程處理反應爲止，需要花費用於穩定氣體濃度及壓力的 等待時間（約7秒）。於是，在此等待時間中，所供給之 1 製程氣體完全不被用於製程處理反應，而從製程室被排 放，造成無端之浪費。 在使用本發明之濃度變更控制的情況，如第6圖所示 般，若在時刻tl 1將電漿電源接通（ON)之後，在時刻tl2 開始供給製程氣體，其後，迄止於製程氣體之濃度調整 穩定之時刻tl 3，只花費約1秒左右之時間。因此，可 知在製程氣體供給開始後，使RF電源接通，至開始製 程處理反應爲止，用於穩定氣體濃度及壓力的等待時間 -19- 200830377 只需1秒即足夠。此調整穩定時間，只要是 度之過渡狀態引起的蝕刻、或成膜之不規則 程之目的而落在允許範圍內之程度的短時間 將RF電源之接通與製程氣體之供給開始設 同時間（例如’在製程氣體濃度之變化開始 之期間接通RF電源等）。 如此’在習知方法中，相對於製程處理 30秒，製程處理反應開始之等待時間爲7秒 g 率，但在本發明方法中，等待時間成爲1秒 性地縮短了製程時間，同時使得不需要等待 給之製程氣體，所以可有效地利用製程氣體 又，在上述例子中，雖以進行從惰性氣體 朝惰性氣體與製程氣體之混合氣體（Ar/HBr : 體更換，而開始多晶砂餓刻製程的方式構成 此構成僅爲本發明之一例而已。 即，本發明之濃度變更控制，亦可適用於 φ 電漿電源之狀態下，進行從製程氣體（A)至！ 之更換的情況。當進行此種電漿產生中的製 時，在成爲製程對象之基板上，可將不同種 的膜予以積層成長。另外，藉由施加自發性 蝕刻不同種類之複數種的膜。 但是，如第8圖所示般，在室內存在複數 (Ai:、HBr、〇2)之情況，雖然，各自氣體的 發現有室內壓力差。這可以認爲是因氣體種 氣體之易流動性的差異、或朝泵之排氣的易 製程氣體濃 性，依據製 便可。亦可 定在大致相 至調整穩定 反應時間爲 ，而爲局比 以下，飛躍 時間中所供 〇 丨之氬氣（Ar) 76/24)的氣 ，但應理解 在維持投入 K程氣體（B) 程氣體更換 類之複數種 偏壓，亦可 之氣體種類 流量相等卻 類而產生的 流動性的差 -20- 200830377 異所造成。即使氣體流量相同，當氣體種類不同時，仍 會發現有室內壓力差，所以，即使在混合氣體中總流量 相同’當氣體比率不同時，仍會出現室內壓力差。因此， 在氣體種類、氣體比率變化時，在將壓力固定之情況， 即使總流量爲一定，仍需要根據A P C 4之壓力控制。 亦即，可以假設即使對被介設於各成份氣體之供給管 路上的FCS (壓力控制型流量調整器）所供給之新的流量 設定値係，在濃度變更之前後以總流量値成爲相同的條 _ 件，藉由從所假定之變更後的製程氣體濃度逆算所求出 之値，因每一氣體種類之易流動性的差異或易排氣性的 差異，仍有在製程室內產生壓力變動的情況。 在此種情況，介設於排出管路上的 APC4(參照第1 圖），係僅在從變更開始起的指定之微少時間，從第1 動作模式（壓力設定模式）轉換爲第2動作模式（閥開度設 定模式），同時供給爲了緩和剛變更後之壓力變動而由 經驗所求得之閥開度設定値，所以，針對那種因氣體種 類引起之壓力變動，利用瞬間追蹤閥開度，便可瞬間被 緩和。又，在此，從第1動作模式至第2動作模式之轉 換，係因爲第2動作模式（閥開度設定模式）比第1動作 模式（壓力設定模式）更能以短時間達成目的之閥開度的 緣故。 在此，如第9圖及第10圖所示般，在被內建於APC4 之控制閥的開度與室內壓力之間，將室內氣體流量作爲 參數，可看到一定之關係。因此，以此關係爲基礎，並 經反覆之實驗，求得爲了緩和濃度剛變更後不久之壓力 -21- 200830377 變動所需要的閥開度設定値，並在從第1動作模式轉換 爲第2動作模式之後，將如此所求得之閥開度設定値供 給於APC4。 更爲具體而言，如第1 1圖所示般，在時刻t31開始 製程氣體之供給（濃度變更），並將APC4之動作模式從 第1動作模式（壓力設定模式）轉換爲第2動作模式（閥開 度設定模式），同時將爲了緩和剛變更後之壓力變動而 由經驗所求得之閥開度設定値供給於APC4。 於是’因氣體種類之差異等而引起之濃度變更時的壓 力變動’不用等待由第1動作模式（壓力設定模式）產生 之緩慢的調整穩定，而使藉由第2動作模式（閥開度設定 模式）瞬間且強制性地予以制定。 另外，若合倂使用此第2動作模式（閥開度設定模式） 的控制的話，則針對將對各成份氣體之FC S (壓力控制型 流量調整器）所供給之新的流量設定値，設定爲在濃度 變更之前後以總流量値成爲相同的條件，藉由從假定之 φ 變更後的製程氣體濃度逆算所求出之値的控制，則不需 要考慮氣體種類之差異，可迴避僅該部分之控制的複雜 性。又，從第1動作模式轉換爲第2動作模式（時刻t31) 起，迄止於返回第1動作模式（時刻t32)之時間，即作爲 從第1動作模式轉換爲第2動作模式之微少時間，雖亦 依氣體之種類而定，但以3秒以下爲適合。另外，此轉 換亦可與氣體流量値之變更同時進行，亦可在其他時機 進行。 第12圖爲顯示本發明所適用之製造方法（包含第4圖 -22- 200830377 及第1 1圖之控制）的一例之流程圖。在本例中，作爲惰 性氣體係採用Αι:，而作爲製程氣體係採用HBr。又，由 此流程圖所示之一連串的製程，可由PLC9來實現。 首先，在步驟1201進行對Ar氣體之FCS的Ar流量 値設定。接著在步驟1 202，同時進行Ar氣閥（被介設於 Air氣體之FCS的二次側之電磁閥）的開通及對APC之壓 力設定（第1動作模式之壓力設定）。藉此，將Ar氣體導 入室內，並利用APC之第1動作模式（壓力設定模式）的 φ 作用來調整穩定成爲指定壓力。 接著，在步驟1 203進行對微波電源6之微波功率値 設定。接著，在步驟1204進行微波功率ON(微波電源之 投入）。 接著，在步驟1 205，同時進行對HBr氣體之FCS的 HBr流量値設定（包含第4圖之超過量△ F的F12)、Ar 氣體之流量値變更（包含第4圖之超過量△ F的F22)、及 A PC之開度設定（第2動作模式之開度設定）。接著在步 ^ 驟1206進行HBr氣閥（被介設於HBr氣體之FCS的二次 側之電磁閥）之開通。 接著，在步驟1207，同時進行HBr流量値變更（第4 圖之F13)、及Ar流量値變更（第4圖之F23)。另外，依 需要，進行APC之開度設定。如第5圖所示般，步驟 1207係依需要執行複數次。接著在步驟1 208進行APC 壓力設定（第1模式之壓力設定）。接著在步驟1209，進 行對RF功率7、8之RF功率設定（對下部電極之rf功 率的設定）。接著在步驟1210進行RF電源on。藉此， -23- 200830377 完成製程開始之準備。然後，配合其各個時期之製程內 容，進行RF功率値之變更，實施半導體製造製程或液 晶製造製程等。 若製程完成，接著在步驟1211進行RF功率OFF，在 步驟1212進行HBr氣閥關閉及Ar流量値變更，接著在 步驟1213進行微波功率OFF。接著在步驟1214進行Ar 氣閥關閉及APC開度全開。 以後，只要繼續一連串之製造步驟（在步驟1 2 1 5爲 NO)，便可一面轉換依照製程使用之製程氣體（在第12 圖中相當於HBr之氣體），反覆執行步驟1201至步驟 1 2 1 4的處理。若結束一連串之製造步驟（在步驟1 2 1 5爲 YES)，則結束製程。若根據本發明之實施形態，在轉換 製程氣體時，不用在中途停止反應，而可連續地進行不 同之製程處理，所以可謀求整體製程之時間縮短。 如上述般，包含本發明之濃度變更處理的製造方法， 例如，可使用PLC9，並適宜地控制FCS1〜FCS11、電磁 閥SV1〜SV1 1、APC4、微波電源6、RF電源7、8等來 實現。 最後，第1 3圖爲將本發明之效果與習知例比較而加 以說明用的流程圖。 如第13 (a)圖所示般，在習知之製造方法中，在開始 供給製程氣體（從惰性氣體至製程氣體之更換）之後（步 驟S 1 3 1 0)，在等待製程室內之製程氣體的濃度及壓力穩 定爲目標値之後（步驟1 3 1 1 )，使電槳電源開啓，並開始 製程處理反應（步驟1312)。然後，在製程處理反應結束 -24- 200830377 時，關閉電漿電源，結束製程處理反應（步驟1313)，隨 後，停止供給製程氣體（從製程氣體至惰性氣體之更 換）（步驟1314)，且在一直等到製程室內之氣體濃度及壓 力穩定爲目標値爲止，不進行下一步驟之處理（例如’ 打開製程室之門，將基板取出等）（步驟1 3 1 5)。在此情 況，等待室內之氣體濃度及壓力之穩定的時間，並未進 行任何處理，而成爲時間上之無端浪費。 相對於此，在本發明中，如第1 3 (b)圖所示般，亦可 ^ 幾乎同時進行製程氣體供給開始（步驟1 320)及電漿電源 〇N(步驟1321)，同樣亦可幾乎同時進行電漿電源OFF (步 驟1 322)及製程氣體供給停止（步驟1 323)。與習知不同 而可進行此等步驟，是因爲在製程室1內，氣體濃度可 瞬間達到並穩定在目的値，而可從供給氣體之瞬間起執 行製程處理的緣故。在此，製程氣體係有材料氣體（成 爲由製程所生成之膜等的材料的氣體）與惰性氣體之混 合氣的情況’亦有僅爲材料氣體之情況。 φ 另外，在本發明中，如第1 3 (c)圖所示般，在製程室 內開啓電漿電源之後（步驟133〇)，開始供給製程氣體（從 惰性氣體至製程氣體之更換）（步驟1331)。然後在製程結 束時停止供給製程氣體（從製程氣體至惰性氣體之更 換）（步驟1 3 32)之後，關閉電漿電源（步驟ι 3 3 3)。與習知 不同而可進行此等步驟，是因爲在製程室丨內，氣體濃 度可瞬間達到並穩定在目的値，而可從供給氣體之瞬間 起執行製程處理的緣故。 此時’亦可幾乎同時進行製程氣體之供給開始（從惰 •25- 200830377 性氣體至製程氣體之轉換）及電漿電源Ο N，同樣亦可幾 乎同時進行製程氣體之供給停止（從製程氣體至惰性氣 體之轉換）及電漿電源OFF。在此，處理氣體係具有材料 氣體（成爲由處理所生成之膜等的材料的氣體）與惰性氣 體之混合氣的情況，亦有僅爲材料氣體之情況。 (產業上之可利用性） 若根據本發明，便可將導入反應爐內之製程氣體馬上 電漿化而使其運用於電漿反應處理，所以，可提高製程 φ 氣體之利用效率，降低該部分之製造成本。此外，因可 大幅減少反應處理開始前之等待時間，所以，亦可藉由 製程之TAT(Turn-Around Time)的縮短化而提高生產性。 另外，可與電漿反應處理之完成，同時馬上停止製程 氣體的供給，然後迅速對電漿產生器發出停止產生電漿 指令，所以，可防止對電漿反應無貢獻之製程氣體的無 端使用，通過提高製程氣體之利用效率，而謀求製造成 本之降低。 $ 另外，因爲反應處理結束後之等待時間亦可大幅減 少，所以，亦可藉由製程之TAT (Turn-Around Time)的縮 短化而提高生產性。 另外，所供給之製程氣體馬上運用於電漿反應處理， 所以，在電漿反應處理開始時，不會無端地消費電力， 藉此，可提高生產性且節省製程氣體，此外，通過電力 能源之節省，可最大限度地追求低成本化。 又，因爲與電力被截止而結束電漿反應處理之同時亦 停止製程氣體之供給，所以不會無端浪費製程氣體，藉 -26- 200830377 此，可提高生產性且節省製程氣體，且通過電力能源之 節省，可最大限度地追求低成本化。 使用本發明之電漿反應爐處理系統的電子裝置之製 造方法，係在半導體裝置、太陽電池、大型平面顯示裝 置（液晶顯示裝置或有機EL顯示裝置）、其他之電子裝置 的製造中，可適用於基板之電漿反應處理（電漿氧化處 理、電漿氮化處理、電漿CVD處理、電漿蝕刻處理、電 漿灰化處理等）或室內壁等之電漿清潔處理。亦即，本 1 發明之方法適合用於電子裝置一般的製造。 【圖式簡單說明】 第1圖爲電漿反應爐系統之整體構成圖。 第2圖爲FCS及APC之槪略構成圖。 第3圖爲顯示電漿產生器之構成例的圖。 第4圖爲製程開始時之濃’度變更控制的說明圖（其 一）。 第5圖爲製程開始時之濃度變更控制的說明圖（其200830377 IX. Description of the Invention: The present invention relates to a method of manufacturing an electronic device using a plasma reactor processing system suitable for the manufacture of an electronic device such as a liquid crystal device or a semiconductor device. [Prior Art] The plasma reactor processing system includes a process chamber in which a plasma generator is provided (for example, a parallel plate type electrode method, a microwave day line method, etc.); an inert gas supply line, A system for connecting one or more inert gas sources (for example, Ar, Kr, Xe, etc.) to a process chamber; and a process gas supply line for connecting one or more process gases Sources (for example, Η 2, 0 2, NF 3, C12, S i G14, Η B r, SF6, C5F8, CF4, etc.) and process chambers; and indoor gas discharge lines are used to link Process chamber and exhaust pump. Each of the inert gas and each of the supply lines of the process gas is provided with a flow regulator for adjusting the flow rate of the gas flowing in the pipeline to the set enthalpy, and simultaneously discharging the gas in the chamber. A pressure controller is disposed on the pipeline, and has a function of automatically changing the opening degree of the flow control valve to the direction in which the supplied pressure is set and the deviation of the pressure measurement 値 measured by the pressure measuring unit is reduced. However, in such a plasma reactor processing system, it is necessary to change the concentration of the ambient gas in the process chamber at the beginning of the process, during the process, and at the end of the process. For example, at the beginning of the process, the concentration of the mixed ambient gas from the inert gas (diluted gas) to the inert gas and the 1 200830377 or two or more process gases is required to be changed. In addition, in the course of the process, it is also necessary to change the concentration of the mixed ambient gas from a certain concentration of the inert gas and the process gas to the mixed ambient gas of a different concentration of the mixed ambient gas or gas. Further, at the end of the process, it is necessary to change the concentration of the ambient gas from the mixed gas of the inert gas and the process gas to the atmosphere of the inert gas. In general, this concentration change is achieved by supplying a new flow rate setting 流量 to the flow regulators on the various lines of the supply line of the component gases. Conventionally, the flow rate adjuster used for such a purpose has a temperature distribution in which an excessive flow rate is likely to occur shortly after the start of gas supply. Therefore, it takes time to adjust the pressure in the process chamber to a constant value. The above problem is solved by using a pressure control type flow regulator as a flow rate adjuster (see Patent Document 1). In other words, the pressure control type flow rate adjuster has a function of automatically changing the opening degree of the flow rate control valve in accordance with the direction in which the supplied flow rate setting 値 and the flow rate detection 对应 corresponding to the fluid pressure measured by the pressure measuring unit are reduced. Therefore, the flow rate such as the flow rate setting can be obtained shortly after the gas supply is started. On the other hand, even if a pressure-controlled flow regulator is used as the flow regulator, when a new flow rate setting is supplied to the flow regulator of each component gas to change the flow rate, even in the process chamber gas discharge line 200830377 With a pressure controller, there is still a large pressure in the process chamber: the problem of force variation. The above problem can be achieved by using an opening variable type fluid control valve or an exhaust speed variable type exhaust pump which is disposed in the discharge line of the process chamber gas, and is linked with the flow rate change of the pressure control type flow rate adjuster. The amount of exhaust gas is changed (increased) to solve it (see Patent Document 2). [Patent Document 1] JP-A-2002-203795 (Patent Document 2) JP-A-2002-203795 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, the plasma reaction described in Patent Document 2 is used. In the manufacturing method of the electronic device of the furnace processing system, since the flowability and the venting property differ depending on the type of each gas, even if it is changed in accordance with the flow rate change by the pressure control type flow rate adjuster, it is changed instantaneously. The amount of exhaust gas still has a problem that it is impossible to completely absorb the pressure fluctuation in the process chamber caused by the flow rate change caused by the pressure control type flow regulator. The present invention has been made in view of the above problems, and an object thereof is to provide a method of manufacturing an electronic device using a plasma reactor processing system at the beginning of a process, at the end of a process, at the end of a process, etc. In this way, the concentration of the ambient gas in the process chamber can be changed instantaneously, and the plasma reaction treatment process necessary for the production of the liquid crystal device or the semiconductor device can be realized with high productivity and low cost. Other objects and effects of the present invention will be readily understood by those skilled in the art by referring to the following description in the specification. 200830377 (Means for Solving the Problem) The problem to be solved by the above invention can be solved by a method of manufacturing an electronic device using a plasma reactor processing system formed as follows. That is, the plasma reactor processing system to which the method of manufacturing the electronic device is applied has a process chamber (a plasma reactor body), a plasma generator is disposed therein, and a supply line for the inert gas is used. Each of the one or more inert gas sources and the process chamber; the process gas supply line is used to connect one or more process gas sources to the process chamber; and the indoor gas The discharge line is used to connect the process chamber and the exhaust pump. The present invention has the first step of supplying the pressure control type flow regulator provided on the supply line of each component gas in order to change the concentration of the process gas in the process chamber in the plasma reactor treatment system. The new flow rate setting 値, and in the first step, the new flow rate supplied to each flow rate adjuster is set to 相同, and the total flow rate 値 is set to the same condition before the concentration change, by the assumption The enthalpy obtained by inverse calculation of the changed process gas concentration. In addition, a pressure controller is disposed on the discharge line of the indoor gas, and has a direction of decreasing the deviation between the supplied pressure setting 値 and the pressure measurement 经由 measured by the pressure measuring unit, and automatically changing the opening degree of the flow control valve The first action mode. According to this configuration, when the concentration of the process gas is changed, the new flow rate supplied to the flow rate adjuster provided in the supply line of each component gas is set to 总, and the total flow rate is set before the concentration change. 200830377 値The same condition is obtained by inversely calculating the process gas concentration after the assumed change. Therefore, even if the flow rate is changed by the flow regulator provided in the supply line of each component gas, the flow rate is changed. The changed parts are offset by each other, and there is no pressure change in the process chamber, or even if there is a pressure change, it stays only in a small amount. Therefore, if the pressure is changed to this extent, the pressure controller interposed in the body discharge line of the process chamber gas acts to stabilize the fluctuation of the internal pressure immediately. In a preferred embodiment, in the first step, the new flow rate setting supplied to each flow rate adjuster is reduced only after the change in the first minute time from the start of the change. The component gas, in addition to the amount of excess in the direction of decrease, is added to the component gas which is added after the change, and the excess amount of the direction is increased, and the total amount of excess in the direction of decrease is equal to the total amount of excess in the direction of increase. In this case, it is preferable that the first minute time is 2 seconds or less. According to this configuration, the flow rate of each flow rate adjuster increases only when the target is increased more than the target increase target, or decreases with the target reduction target. Even in the case where the capacity of the process chamber is large, the concentration of the ambient gas in the process chamber can quickly reach the target concentration from the change of the concentration, and then is adjusted and stabilized. Further, even in the period in which the flow rate is exceeded, since the total amount of excess amount in the decreasing direction is set equal to the total amount of excess in the increasing direction, the excess amounts are canceled each other without affecting the pressure fluctuation. . In still another preferred embodiment of the present invention, the pressure controller disposed on the discharge line of the indoor air 200830377 has a direction in which the deviation between the opening degree and the opening degree is reduced toward the supplied opening degree. a second operation mode in which the opening degree of the flow control valve is automatically changed, and a second step is a pressure controller that is disposed in the discharge line only for the second minimum time from the start of the change. The first operation mode is switched to the second operation mode, and the valve opening degree setting 由 which is empirically obtained in order to alleviate the pressure fluctuation immediately after the change is supplied. In this case, it is preferable that the second minute time is 3 seconds or shorter. φ According to this configuration, even if the new flow rate supplied to the flow rate adjuster provided in the supply line of each component gas is set to 値, the total flow rate 値 is set to the same condition before and after the concentration change. The enthalpy obtained by the inverse calculation of the assumed process gas concentration, and the pressure fluctuation in the process chamber due to the difference in the fluidity of each gas type or the difference in the venting property, The pressure controller interposed in the discharge line is switched from the first operation mode to the second operation mode only at a specified time from the start of the change, and is supplied with a zero to compensate for the pressure fluctuation shortly after the change. Since the valve opening degree obtained by the experience is set to 値, the pressure fluctuation caused by such a gas type can be instantly relieved by instantaneously tracking the valve opening degree. The concentration of the process gas which is characteristic of the manufacturing apparatus of the present invention can be changed, and any one of the changes in the concentration of the process gas at the start of the process, the middle of the process, or the end of the process can be applied. As described above, in the present invention, since the process gas introduced into the reaction furnace can be immediately plasma-treated and used for the plasma reaction treatment, the utilization efficiency of the process gas can be improved, and the manufacturing cost of the portion can be reduced. In addition to the -10 - 200830377, the waiting time before the start of the reaction process can be greatly reduced. Therefore, the productivity can be improved by shortening the TAT (Turn-Around Time) of the project. In addition, the supply of the process gas can be stopped immediately after the completion of the plasma reaction treatment, and then the plasma generator can be quickly sent to generate a stop command, so that the process gas that does not contribute to the plasma reaction can be prevented from being used endlessly. By increasing the utilization efficiency of the process gas, a reduction in manufacturing cost can be achieved. In addition, since the waiting time after the end of the reaction process can be greatly reduced, the productivity can be improved by shortening the TAT (Turn-Around Time) of the project. In addition, the supplied process gas is immediately applied to the plasma reaction treatment, so that power is not wasted in the beginning of the plasma reaction treatment, thereby improving productivity and saving process gas, and saving by electric energy. To maximize cost reduction. Further, since the supply of the process gas is stopped at the same time as the end of the electric power is ended, the supply of the process gas is stopped, so that the power is not consumed unnecessarily, thereby improving productivity and saving process gas, and saving by electric energy. Maximize the cost reduction. (Effect of the Invention) According to the present invention, when the concentration of the process gas is changed, the new flow rate supplied to the flow rate adjuster provided in the supply line of each component gas is set to be set before the concentration change. The total flow rate 値 is the same condition, and the enthalpy is obtained by inversely calculating the process gas concentration after the assumed change. Therefore, even if the amount is changed by the component gas -11-200830377, The internal pressure is the same as that of Figure 11, which is the flow regulator on the supply line of the flow control valve of Ar, the system, the 〇2, and the energy of the chamber 1. The flow is changed. They cancel each other out, and there is no pressure change in the process chamber. Even if there is a pressure change, it stays only in a small amount. If the pressure is changed to this extent, the pressure controller that is placed in the gas discharge line in the process chamber acts to stabilize the fluctuation of the chamber force. [Embodiment] Hereinafter, a preferred embodiment of a method of manufacturing an electronic device of the A plasma reactor processing system of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing the overall configuration of a plasma reactor system. As shown, the plasma reactor treatment system 100 has a plasma generator 1 a inside a process chamber, and a supply line for inert gas to connect one or more inert gas sources ( In this example, the parties of Kr and Xe) and the process chamber 1 and the supply line of the process gas are connected to one or more process gas sources (H2 NF3, C12, SiC14, HBr, SF6 in this example). , C5F8, CF4), each side of the chamber 1; and the indoor gas discharge line, used to connect the process and the exhaust pump (Pump) 5. A working flow control system (hereinafter referred to as FCS) as a pressure control type flow regulator is disposed on the supply line of the inert gas and the supply line of the process gas, which has a setting 朝 and a corresponding The direction in which the deviation of the flow rate of the fluid measured by the pressure measuring unit is reduced, and the function of opening the flow rate is automatically changed. -12- 200830377 More specifically, the supply line of the Ar gas is divided into a first supply line leading to the introduction port 2 of the upper projection plate and an introduction port 3 facing the lower projection plate. The second supply line. Manual valves 1 V 1 1 , FCS 1 1 and solenoid valve S V1 1 having a check valve function are provided on the first supply line, and manual valves MV9, FCS9, and solenoid valve SV9 are disposed on the second supply line. . Therefore, the flow rate of the Ar gas can be controlled by the flow rate setting of the operation FCS11 and/or FCS9. The supply paths for Kr gas and Xe gas are also the same. Therefore, the flow rate of Κι: gas or Xe gas can be controlled by operating the flow rate setting of FCS10 and/or FCS8. The supply line of the H2 gas is directly connected to the gas introduction port 3 of the lower section of the slab, and the manual valves MV7, FCS7, and the electromagnetic valve SV7 are disposed on the line. Therefore, the flow rate of the H2 gas can be controlled by the flow setting of the operation FCS7. The supply lines for ΗΒι: gas, SF6 gas and C5F8 gas are also the same. Therefore, by operating the flow rate setting of FCS2 or FCS3, the flow rates of HBr gas, SF6 gas, and C5F8 gas can be controlled. 02 The gas supply line is branched into the first supply line of the introduction port 2 toward the upper projection plate and the introduction port 3 toward the lower projection plate via the manual valves MV6, FCS6, and the solenoid valve SV6. The second supply line. A manual valve MV62 is disposed in the first supply line, and a manual valve MV61 is disposed in the second supply line. Therefore, the flow rate of the 02 gas can be controlled by the flow setting of the operation FCS6. The supply lines for NF3 gas, C12 gas, and SiC14 gas are also the same. Therefore, by operating the flow rate setting of FCS5 or FCS4, the flow rate of NF3 gas, C12 gas, and SiC14 gas can be controlled from -13 to 200830377. Fig. 2(a) is a schematic diagram showing the configuration of F C S having the function of a pressure control type flow regulator. As shown in the figure, f C S has a control unit 51, a control valve 5, a pressure measuring unit 53, and an opening 54. In the control unit 51, the illustration is omitted, but the amplification circuit, the flow rate calculation circuit, the comparison circuit, and the valve drive circuit are included (see Japanese Patent Laid-Open No. 2003-203789, No. 3). The measurement signal of the pressure measuring unit 53 is amplified by the amplifying circuit, and then converted into a corresponding flow rate detecting signal by the flow rate calculating circuit. The φ flow detection signal is compared by the comparison circuit and the flow rate setting signal to obtain the deviation signals. The valve drive circuit controls the opening of the control valve 52 in a direction in which the deviation of the deviation signal is reduced. In the FCS system, if the upstream pressure P1 is twice or more the pressure P2 downstream, the fluid becomes a sonic region, and the principle is proportional to the pressure on the upstream side, because the flow rate is controlled by adjusting the upstream pressure P1. Therefore, the gas flow rate of the target can be instantaneously supplied even after the gas is supplied. As a FSC having such a function, various products are available from various manufacturers in the market. For example, Fujitsu Co., Ltd. type FCS-4WS-7 9 8 -F3L, type FCS-4WS-7 9 8 -F500, type FCS-4WS-79 8-F 1 600, etc. On the other hand, an automatic pressure controller (hereinafter referred to as APC) 4 having a function as a pressure controller is provided on the discharge line of the indoor air, and has a pressure set to the supplied pressure and a measurement by the pressure measuring unit. The pressure measurement 値 deviation direction is reduced, and the function of the opening of the flow control valve is automatically changed. -14- 200830377 Figure 2(b) shows the schematic diagram of APC4. As shown in the figure, the APC is internally provided with a control unit 41 and a control valve 42. The control unit 41 has a first action of automatically changing the opening degree of the flow rate control valve 42 in the direction in which the supplied pressure is set and the deviation of the pressure measurement 値 measured by the pressure measuring unit 43 installed in the process chamber is reduced. The mode (pressure setting mode) and the second operation mode (opening degree setting mode) for automatically changing the opening degree of the control valve 42 in the direction in which the deviation of the supplied opening degree is reduced. As a kind of APC having such a function, various products are sold in the market, and examples thereof include a model controller PM-3 manufactured by VAT SKK VACUUM LTD, a control valve F61-87665-18, and the like. Fig. 3 shows an example of the configuration of the plasma generator. Examples of the plasma generator 1 a include a parallel plate type electrode method and a microwave antenna method. The parallel plate type electrode type plasma generator is composed of a parallel plate type electrode (consisting of the plasma excitation electrode 112 and the electrode I 1 1 3) as shown in Fig. 3(a), and the electrode is supplied high. The RF power sources 7 and 8 for frequency power (see Fig. 1), the focusing plate 115 for supplying a process gas, and the chamber 1 1 1 for accommodating the members. Further, by applying a high frequency to the supplied process gas by the parallel plate electrode, the process gas is excited to be in a plasma state. On the other hand, the microwave antenna type plasma generator, as shown in Fig. 3(b), replaces the high frequency power, and the microwave antenna 1 16 driven by the microwave driving circuit 1 17 faces the room. The microwave is radiated in 1 1 1 to excite the processing gas. In any of the plasma generators, the generation or stop of the plasma can be controlled by turning on or off the plasma power source (RF power source 7, 8 or microwave power source 6, etc.) -15-200830377. Returning to Figure 1, the control of FCS1~11, solenoid valves SV1~SV11, APC4, microwave power supply 6, and RF power supply 7, 8 contained in the plasma reactor processing system, in this example, using a programmable controller (below) Called PLC) 9 to proceed. The PLC 9 is in communication with a program-controlled terminal (hereinafter referred to as PT) 10 having a function as an operation display unit via the communication 11. That is, PLC9 and FCS1 to FCS11 are connected via a PLC interface 9& which includes a DA/AD unit. ? 1^9 is connected to the solenoid valve 3乂1~3711^ via the PLC interface 9b including the DO unit. The PLC9 and the microwave power source 6 are connected via a PLC interface 9c including a DA/AD unit or a DO/DI unit. The PLC9 and APC4 are connected by a PLC interface 9d containing RS232C. Further, the PLC 9 and the RF power sources 7 and 8 are connected via a PLC interface 9e including a DA/AD unit or a DO/DI unit. Further, the PLC 9 executes the process shown in the flowchart of Fig. 2 to be described later via a user program, thereby realizing the manufacturing method of the present invention. Next, the concentration change control of the main part of the manufacturing method of the electronic device using the plasma reactor processing system of the present invention will be described. The method of the present invention is characterized in that a new flow rate supplied to an FCS (pressure-controlled flow regulator) disposed in a supply line of each component gas is set to be set when the concentration of the process gas is changed. After the concentration change, the total flow rate 値 is the same condition, and the enthalpy obtained by inversely calculating the process gas concentration after the assumed change is used. Fig. 4 is an explanatory view showing the concentration change control of the present invention. If it is assumed now that the process gas concentration before the concentration change is A1 (for example, '0%), the gas supply amount for the period -16 - 200830377 is F 1 1 (for example, 0 sccm), and the inert gas supply amount is F21 (for example, 420 sccm). And assuming that the process gas concentration after the concentration change is A2 (for example, 24%), the process gas supply amount is F13 (for example, 100 sccm), and the inert gas supply amount is F23 (for example, 320 sccm), the concentration change in the present invention In the control, the new flow rate setting 値 (F13, F23) supplied to the FCS (pressure-controlled flow rate regulator) disposed in the supply line of each component gas is used to increase the total flow rate before the concentration change. Be the same (?11+?21413#23 = 1〇 as the condition, and find the 値 by the inverse calculation of the process gas concentration (A2) after the assumed change (F13 = A2xK, F23 = (l-A2)xK If the flow rate setting 値(F1 3, F23) obtained in this way is supplied to each FCS, the total indoor flow rate will not increase in principle after the concentration change. Therefore, when the concentration is changed, the process chamber is changed. The pressure will not change greatly (increase), but it can be instantaneous The internal pressure is stabilized. However, if this method is used, it is considered that the flow rate variation range of each gas before and after the concentration change is limited, and the flowability due to the gas type or the capacity of the process chamber is large. It takes time to reach the target gas concentration, and the result will be delayed at the beginning of the process. Therefore, in this example, the new flow rate of each component gas is set to 指定, only specified from the start of the change. For a small amount of time (Δt), for the component gas that is reduced after the change, plus the excess amount of the direction of decrease (-ΔF), the amount of the component gas added after the change is added to the excess amount (+ Δ F) of the increase direction. It is set such that the total amount of the excess amount in the decreasing direction is equal to the total amount of the excess amount in the increasing direction. -17- 200830377 Further, as long as the total amount of excess amount in the decreasing direction is equal to the total amount of excess in the increasing direction, The excess amount can be realized by a plurality of pulse waves. As an example of a plurality of pulse waves, FIG. 5 is an explanatory diagram showing a case where the excess amount is two pulse waves. In the same figure, the new flow rate of each component gas is set to 値. First, within the specified minimum time (Δ tl) from the start of the change, the amount of decrease in the direction of the component gas after the change is added (_ Δ F 1 ), for the component gas added after the change, the excess amount ( + AF1 ) of the increase direction is added, and the total amount of the excess amount of the decrease direction φ is equal to the total amount of the excess amount of the increase direction. In the lesser time (Δt2) specified later, the amount of excess gas (-△ F2) is also added to the component gas which is reduced after the change, and the component gas added after the change is added to the direction of the increase. The amount (+ Δ F2) is set such that the total amount of excess in the direction of decrease is equal to the total amount of excess in the direction of increase. According to the above-described excess amount addition calculation method, the total flow rate is continuously maintained only at a predetermined time (Δt) from the start of the change, and 0 does not cause a large flow rate change for each gas type. The time to reach the target process gas concentration can be shortened. Again, in Figure 5. U) Display the opening of the APC in a small time. Further, the specified minimum time (Δt) depends on the type of gas, but it is suitable for 2 seconds or less. Next, a specific plasma reactor treatment system will be taken as an example to describe the control result of the concentration change control (see Fig. 4) according to the present invention and the control result of the concentration change control according to the conventional method. The polycrystalline -18-200830377 矽 (poly-Si) film was etched by plasma-excited etching using a microwave plasma generator (see Figure 3(b)). The chamber capacity is 53 liters, the indoor gas flow rate is 42 〇CC/min, and the gas type is set to a process gas of ΗΒι:, and the plasma excitation gas is an inert gas of Ar. The concentration ratios of HBr and Ar in the steady state are targeted at 24% and 76%, respectively. In addition, the target pressure in the process chamber is set to 30 mTorr, and the microwave for plasma generation is 2. 45 GHz, Spontaneous bias voltage with high frequency is 13. At 56 MHz, the substrate temperature was 20 ° C, and the process time was 30 seconds. Fig. 6 is a view showing a change in gas concentration when the concentration change control (see Fig. 4) of the present invention is used, and Fig. 7 shows a change in gas concentration when the conventional concentration change control is used. In the case of using the conventional concentration change control, as shown in Fig. 7, after the plasma power supply is turned "ON" at time t21, the supply of the process gas is started at time t22, and thereafter the concentration of the process gas is stopped. Adjusting the stable time t23 takes about 7 seconds. Therefore, in this conventional example, it takes a waiting time (about 7 seconds) for stabilizing the gas concentration and pressure until the RF power source is turned on until the process processing reaction is started after the start of the process gas supply. Thus, during this waiting time, the supplied process gas is not used at all for the process processing reaction, but is discharged from the process chamber, resulting in unwarranted waste. In the case of using the concentration change control of the present invention, as shown in Fig. 6, after the plasma power supply is turned "ON" at time t11, the supply of the process gas is started at time t12, and thereafter, the process is terminated. When the concentration of the gas is stabilized at a time t13, it takes only about 1 second. Therefore, it is known that the RF power supply is turned on after the start of the process gas supply, and the waiting time for stabilizing the gas concentration and pressure is started until the process reaction is started. -19- 200830377 It takes only one second to be sufficient. The adjustment stabilization time is as long as the supply of the RF power source and the supply of the process gas are started at the same time as long as it is within the allowable range due to the etching caused by the transition state of the degree or the irregularity of the film formation. (For example, 'the RF power supply is turned on during the start of the change in the process gas concentration, etc.). Thus, in the conventional method, the waiting time for starting the process processing reaction is 7 seconds g rate with respect to the process processing for 30 seconds, but in the method of the present invention, the waiting time becomes 1 second to shorten the process time while making no It is necessary to wait for the process gas to be supplied, so that the process gas can be effectively utilized. In the above example, although the mixed gas from the inert gas to the inert gas and the process gas is performed (Ar/HBr: body replacement, the polycrystalline sand is started to be hungry. The configuration of the engraving process is only an example of the present invention. That is, the concentration change control of the present invention can be applied to the replacement of the process gas (A) to ! in the state of the φ plasma power supply. When such a plasma generation process is performed, different types of films can be grown on the substrate to be processed, and a plurality of different types of films can be spontaneously etched by applying a plurality of types. As shown in Fig. 8, there are a plurality of cases (Ai:, HBr, 〇2) in the room, although the gas is found to have a difference in the indoor pressure. This can be considered as a gas species. The difference in the fluidity, or the concentration of the process gas to the exhaust of the pump, can be determined according to the system. It can also be set to the approximate phase to adjust the stable reaction time, and for the ratio of the following, the supply time in the leap time Argon gas (Ar) 76/24), but it should be understood that while maintaining a plurality of bias voltages for the gas replacement of the K-pass gas (B), or the flow of the gas type is equal, the fluidity is generated. Poor -20- 200830377 caused by the difference. Even if the gas flow rates are the same, when the gas types are different, there is still a difference in the indoor pressure, so even if the total flow rate is the same in the mixed gas, when the gas ratio is different, the indoor pressure difference still occurs. Therefore, when the gas type and the gas ratio change, when the pressure is fixed, even if the total flow rate is constant, the pressure control according to A P C 4 is required. In other words, it can be assumed that even if a new flow rate is supplied to the FCS (pressure-controlled flow regulator) that is disposed in the supply line of each component gas, the total flow rate becomes the same after the concentration change. According to the inverse calculation of the assumed process gas concentration after the assumed change, there is still a pressure change in the process chamber due to the difference in the flowability of each gas type or the difference in the exhaustibility. Case. In this case, the APC 4 (refer to the first drawing) disposed in the discharge line is switched from the first operation mode (pressure setting mode) to the second operation mode only during the specified time from the start of the change ( In the valve opening degree setting mode, the valve opening degree setting 由 which is empirically determined in order to alleviate the pressure fluctuation immediately after the change is supplied, so that the valve opening degree is instantaneously tracked for the pressure fluctuation due to the gas type. It can be eased in an instant. Here, the transition from the first operation mode to the second operation mode is because the second operation mode (valve opening degree setting mode) can achieve the purpose of the valve in a shorter time than the first operation mode (pressure setting mode). The reason for the opening. Here, as shown in Fig. 9 and Fig. 10, a certain relationship can be seen between the opening degree of the control valve built in the APC 4 and the indoor pressure as the parameter of the indoor gas flow rate. Therefore, based on this relationship, and through repeated experiments, the valve opening setting 値 required to alleviate the pressure 21-200830377 change immediately after the change of the concentration is obtained, and is changed from the first operation mode to the second After the operation mode, the valve opening degree setting thus obtained is supplied to the APC 4. More specifically, as shown in FIG. 1, the supply of the process gas (density change) is started at time t31, and the operation mode of the APC 4 is switched from the first operation mode (pressure setting mode) to the second operation mode. (Valve opening degree setting mode), and the valve opening degree setting 由 obtained by experience in order to alleviate the pressure change immediately after the change is supplied to the APC 4. Then, the pressure fluctuation at the time of the change of the concentration due to the difference in the type of the gas does not wait for the slow adjustment by the first operation mode (pressure setting mode), and the second operation mode (the valve opening degree is set) Mode) is formulated instantaneously and compulsory. In addition, when the control of the second operation mode (valve opening degree setting mode) is used in combination, the new flow rate supplied to the FC S (pressure control type flow rate adjuster) for each component gas is set to 値In order to control the enthalpy obtained by inversely calculating the process gas concentration after the change of the assumed φ, the total flow rate 之前 is changed to the same condition before and after the concentration change, and it is not necessary to consider the difference in the gas type, and only the portion can be avoided. The complexity of the control. Further, from the first operation mode to the second operation mode (time t31), the time until the first operation mode (time t32) is returned, that is, the time from the first operation mode to the second operation mode Although it depends on the type of gas, it is suitable for 3 seconds or less. In addition, this conversion can be performed simultaneously with the change of the gas flow rate, or at other timings. Fig. 12 is a flow chart showing an example of a manufacturing method (including the control of Figs. 4-22-200830377 and Fig. 1) to which the present invention is applied. In this example, Αι: is used as the inert gas system, and HBr is used as the process gas system. Further, a series of processes shown by this flowchart can be realized by PLC 9. First, in step 1201, Ar flow rate setting for the FCS of the Ar gas is performed. Next, in step 1202, the opening of the Ar gas valve (the electromagnetic valve interposed on the secondary side of the FCS of the Air gas) and the pressure setting of the APC (pressure setting in the first operation mode) are simultaneously performed. Thereby, the Ar gas is introduced into the room, and the φ action of the first operation mode (pressure setting mode) of the APC is used to adjust the stability to the designated pressure. Next, in step 1 203, the microwave power 値 setting of the microwave power source 6 is performed. Next, in step 1204, microwave power ON (input of the microwave power source) is performed. Next, in step 1205, the HBr flow rate FC setting of the FCS of the HBr gas (including the F12 of the excess amount ΔF in FIG. 4) and the flow rate Ar of the Ar gas are simultaneously performed (including the excess amount ΔF of FIG. 4). F22) and A PC opening degree setting (opening degree setting of the second operation mode). Next, in step 1206, the opening of the HBr gas valve (the solenoid valve which is disposed on the secondary side of the FCS of the HBr gas) is performed. Next, in step 1207, the HBr flow rate change (F13 in Fig. 4) and the Ar flow rate change (F23 in Fig. 4) are simultaneously performed. In addition, the APC opening degree setting is performed as needed. As shown in Figure 5, step 1207 is performed as many times as needed. Next, in step 1 208, APC pressure setting (pressure setting in the first mode) is performed. Next, in step 1209, the RF power setting for the RF powers 7, 8 (the setting of the rf power to the lower electrode) is performed. RF power on is then performed at step 1210. In this way, -23- 200830377 complete the preparation of the process. Then, in accordance with the process contents of each period, the RF power is changed, and a semiconductor manufacturing process or a liquid crystal manufacturing process is performed. If the process is completed, then RF power is turned off in step 1211, the HBr valve is closed and the Ar flow rate is changed in step 1212, and then the microwave power is turned off in step 1213. Next, in step 1214, the Ar gas valve is closed and the APC opening is fully opened. In the future, as long as the series of manufacturing steps are continued (NO in step 1 2 1 5), the process gas used in the process (the gas corresponding to HBr in Fig. 12) can be converted, and steps 1201 to 1 2 are repeatedly executed. 1 4 processing. If a series of manufacturing steps are completed (YES in step 1 2 1 5), the process ends. According to the embodiment of the present invention, when the process gas is switched, it is not necessary to stop the reaction in the middle, and the different process processes can be continuously performed, so that the time for the overall process can be shortened. As described above, the manufacturing method including the concentration changing process of the present invention can be realized, for example, by using PLC 9 and appropriately controlling FCS1 to FCS11, solenoid valves SV1 to SV1 1 , APC4, microwave power source 6, RF power source 7, 8 and the like. . Finally, Fig. 13 is a flow chart for explaining the effects of the present invention in comparison with a conventional example. As shown in Fig. 13(a), in the conventional manufacturing method, after the supply of the process gas (from the replacement of the inert gas to the process gas) is started (step S1 3 1 0), the process gas in the process chamber is awaited. After the concentration and pressure are stabilized as the target enthalpy (step 1 3 1 1 ), the power source is turned on, and the process processing reaction is started (step 1312). Then, at the end of the process processing reaction -24-200830377, the plasma power supply is turned off, the process processing reaction is terminated (step 1313), and then the supply of the process gas (replacement from the process gas to the inert gas) is stopped (step 1314), and Wait until the gas concentration and pressure in the process chamber are stabilized as the target ,, and do not proceed to the next step (for example, 'Open the process chamber door, take out the substrate, etc.) (step 1 3 1 5). In this case, waiting for the gas concentration and pressure in the room to stabilize is not treated at all, but becomes a waste of time. On the other hand, in the present invention, as shown in the first graph (3), the process gas supply start (step 1 320) and the plasma power source 〇N (step 1321) may be performed almost simultaneously. The plasma power supply OFF (step 1 322) and the process gas supply stop (step 1 323) are performed almost simultaneously. Unlike the conventional steps, these steps can be performed because the gas concentration can be instantaneously reached and stabilized in the process chamber 1, and the process can be performed from the moment the gas is supplied. Here, in the case where the process gas system has a mixture of a material gas (a gas which is a material such as a film formed by a process) and an inert gas, there is also a case where it is only a material gas. φ Further, in the present invention, as shown in FIG. 13(c), after the plasma power source is turned on in the process chamber (step 133A), supply of the process gas (replacement from the inert gas to the process gas) is started (step 1331). Then, after the process gas is stopped (replacement from process gas to inert gas) at the end of the process (step 1 3 32), the plasma power is turned off (step 135 3 3). Unlike the conventional ones, these steps can be carried out because the gas concentration can be instantaneously reached and stabilized in the process chamber, and the process can be performed from the moment the gas is supplied. At this time, it is also possible to start the supply of the process gas almost simultaneously (from the inert gas 25-200830377 gas to the process gas) and the plasma power supply Ο N, and the process gas supply can be stopped almost at the same time (from the process gas) Conversion to inert gas) and plasma power supply OFF. Here, the processing gas system may be a mixture of a material gas (a gas which is a material such as a film formed by the treatment) and an inert gas, and may be a material gas only. (Industrial Applicability) According to the present invention, the process gas introduced into the reaction furnace can be immediately plasmad and applied to the plasma reaction treatment, so that the utilization efficiency of the process φ gas can be improved, and the efficiency can be lowered. Part of the manufacturing cost. Further, since the waiting time before the start of the reaction process can be greatly reduced, the productivity can be improved by shortening the TAT (Turn-Around Time) of the process. In addition, the reaction process with the plasma can be completed, and the supply of the process gas can be stopped immediately, and then the plasma generator can be quickly stopped to generate the plasma command, so that the endless use of the process gas that does not contribute to the plasma reaction can be prevented. The manufacturing cost is reduced by increasing the utilization efficiency of the process gas. In addition, since the waiting time after the end of the reaction process can be greatly reduced, the productivity can be improved by shortening the TAT (Turn-Around Time) of the process. In addition, the supplied process gas is immediately applied to the plasma reaction treatment, so that power is not consumed unnecessarily at the beginning of the plasma reaction treatment, thereby improving productivity and saving process gas, and further, by electric energy Save money and maximize cost. Moreover, since the supply of the process gas is stopped at the same time as the completion of the plasma reaction treatment with the power being cut off, the process gas is not wasted, and the productivity is saved and the process gas is saved, and the electric energy is passed through -26-200830377. The savings can maximize the cost. The manufacturing method of the electronic device using the plasma reactor processing system of the present invention is applicable to the manufacture of a semiconductor device, a solar cell, a large-sized flat display device (liquid crystal display device or organic EL display device), and other electronic devices. Plasma cleaning treatment on the substrate for plasma reaction treatment (plasma oxidation treatment, plasma nitridation treatment, plasma CVD treatment, plasma etching treatment, plasma ashing treatment, etc.) or indoor wall. That is, the method of the present invention is suitable for general manufacture of electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing the overall configuration of a plasma reactor system. Figure 2 is a schematic diagram of the FCS and APC. Fig. 3 is a view showing a configuration example of a plasma generator. Fig. 4 is an explanatory diagram (1) of the richness change control at the start of the process. Figure 5 is an explanatory diagram of the concentration change control at the start of the process (the
第6圖爲顯示本發明方法使用時之氣體濃度變化的 圖。 第7圖爲顯示習知方法使用時之氣體濃度變化的圖。 第8圖爲分別針對3種類之氣體種類顯示製程室內 之氣體流量及壓力的關係的圖。 第9圖爲顯示APC之閥開度與製程室內壓力的關係 (氣體流量1 0 0 s c c m)的圖。 -27- 200830377 第10圖爲APC之閥開度與製程室內壓力的關係（氣 體流量500sccm)的圖。 第11圖爲顯示製程氣體之供給與APC之動作模式的 關係之時序圖。 第12圖爲顯示適用本發明之電子裝置的製造方法之 一例的流程圖。 第1 3圖爲用於說明本發明之效果的流程圖。 【主要元件符號說明】）Fig. 6 is a graph showing changes in gas concentration when the method of the present invention is used. Figure 7 is a graph showing changes in gas concentration when a conventional method is used. Fig. 8 is a view showing the relationship between the gas flow rate and the pressure in the process chamber for each of the three types of gas types. Figure 9 is a graph showing the relationship between the valve opening of the APC and the pressure in the process chamber (gas flow rate 1 0 0 s c c m). -27- 200830377 Figure 10 is a diagram showing the relationship between the valve opening of the APC and the pressure in the process chamber (gas flow rate: 500 sccm). Fig. 11 is a timing chart showing the relationship between the supply of the process gas and the operation mode of the APC. Fig. 12 is a flow chart showing an example of a method of manufacturing an electronic device to which the present invention is applied. Fig. 13 is a flow chart for explaining the effects of the present invention. [Main component symbol description]
1 製程室 la 電漿產生器 2 第1導入口 3 第2導入口 4 APC(壓力調整器） 5 排氣泵 6 微波電源 7 RF 電源（13·56ΜΗζ) 8 RF 電源（2MHz) 9 程控控制器（PLC) 9a 〜9e PLC介面 10 程控終端機（PT) 11 通信 MV 手動閥 FCS 流量控制系統（壓力控制型流量調整器） 2008303771 Process chamber la Plasma generator 2 1st inlet 3 2nd inlet 4 APC (pressure regulator) 5 Exhaust pump 6 Microwave power supply 7 RF power supply (13·56ΜΗζ) 8 RF power supply (2MHz) 9 Programmable controller (PLC) 9a ~ 9e PLC interface 10 Programmable terminal (PT) 11 Communication MV Manual valve FCS flow control system (pressure control flow regulator) 200830377
42 控制閥 43 壓力測量部 51 控制部 52 控制閥 53 壓力測量部 54 開口 100 電漿反應爐處理系統 111 室 112 電漿激發電極 1 13 電極 115 射叢板 116 微波天線 117 微波驅動電路 1201 〜 1215 步驟 1310 〜 1315 步驟 1320 〜 13 23 步驟 1 3 30 〜 1333 步驟 -29-42 Control valve 43 Pressure measuring part 51 Control part 52 Control valve 53 Pressure measuring part 54 Opening 100 Plasma reactor processing system 111 Room 112 Plasma excitation electrode 1 13 Electrode 115 Beam plate 116 Microwave antenna 117 Microwave drive circuit 1201 ~ 1215 Steps 1310 to 1315 Steps 1320 to 13 23 Steps 1 3 30 to 1333 Step -29-