TW200828780A - Crystal oscillator emulator - Google Patents

Abstract

A crystal oscillator emulator integrated circuit comprises a first temperature sensor that senses a first temperature of the integrated circuit. Memory stores calibration parameters and selects at least one of the calibration parameters based on the first temperature. A semiconductor oscillator generates an output signal having a frequency, which is based on the calibration parameters, and an amplitude. An amplitude adjustment module compares the amplitude to a predetermined amplitude and generates a control signal that adjusts the amplitude based on the comparison.

Description

200828780 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an integrated circuit, and more particularly to a bulk circuit. [Prior Art] ^ Many electronic devices, such as mobile phones and other handheld devices, require precise frequency oscillators to provide accurate frequency references in these devices. However, dry defects, including large volumes, are fragile and costly. The other p = 丨 _ only 2 size and cost are related to the spectral frequency, so as the frequency increases, the size and clock (four) are slightly larger. County Electronics has set up a financial sales contract, and has been!! Sex and cost constraints, the use of crystal vibrators has become a problem. "V-body oscillator is a poor choice for crystal oscillators, and a precise frequency tea test, because its vibration frequency changes too much, especially with temperature changes. [Summary of the invention] (4) Slit 11 simulation 11 touches, including: the first - temperature sense, the correction parameter and the parameter of the frequency of the ^ ^ two ^ conductor ^ 'the production of a correction based on the temperature (four) to adjust a correction square ^ to produce some input to which should be corrected Electric 5 200828780 々, 曰 by 14u · · · /, soil 5 test strips of the predetermined temperature characteristic line and the predetermined temperature characteristic curve of at least one of The adaptive T position is entered into the machine. When the test data includes the curvature of the three temperature curves; the slope of the growth line and the predetermined temperature characteristic - at least one of the sub-programmable memories i are adjusted. include

It should include: a temperature sensing device for sensing the temperature of the wiper - an output based on the frequency of the correction parameter ^ 2 body vibrating garment for generating the temperature test point into which Gamma: 敕, H positive device, which is based on some of the other features, the method r; p: ^ ° step 2 includes a means for adjusting the first temperature - and the device is placed缝 彳 彳 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ When the test slope and the financial temperature = 曲 = 曲置采^; the test data of the temperature characteristic line is adjusted by the position of two tempering trials. When the slope of the straight line and the predetermined temperature curve are the predetermined temperature characteristic line and the predetermined temperature characteristic are the test data. When the test data is composed of two temperature test points, the adaptive position, the slope of the adjusted straight line and the predetermined The fixed temperature of the temperature characteristic curve is adjusted based on the test data, and the position is adjusted. When measured;; two-three-three-slide straight line slope and the predetermined temperature adjustment, the adjustment of the temperature of the sub-native job, the linear characteristic and the 峨 temperature miscellaneous = 6 200828780 to the line adjustment. The library device includes a sub-programmable semiconductor oscillator-generated with a calibration-based "semiconductor device", the _ into which the _, the run-to-the-sequence includes the use of a heater to selectively adjust the temperature, the temperature. Method The heater is disabled. The heater returns to the H-significance number after being stored to include 'when the test data is measured by a single temperature, the method of entering the cattle further includes using the predetermined temperature production by two temperature positions. At the time of dot composition, the method is at least one; and based on the measurement rate and at least one of the lines in the curvature of the curvature of the predetermined temperature characteristic curve, at least one of the temperature characteristic line and the predetermined temperature characteristic curve === Straight: line, rate and predetermined temperature characteristics in the rugged temperature characteristic curve: one less two bits ^ poor material 2 the predetermined temperature characteristic straight line and the pre == r two: === first - dirty surface Including: the first - temperature addressing correction 1 = 1 = stored based on the operation is not in phase, the integrated circuit does not include the crystal oscillator simulator wheeled 'the crystal oscillation 11 simulation 11 steps - including - input , the choice to enter two scoop = the frequency of a domain a function of the external passive component. The crystal oscillator simulator is a heater that selectively adjusts the first temperature. The heater responds to the 200828780. The electric M heating is selected from the group consisting of electric resistance heaters. The correction circuit communicates with the memory and generates correction parameters. - The integrated circuit includes: a microelectromechanical system (MEMS bulk acoustic wave resonator (FBAR)) that generates a reference frequency. a noise circuit; a temperature sense wire, which is sewn to the rhyme circuit; the memory stores the correction parameters and selects at least one correction parameter of the correction parameter towel as a function of the sensed temperature; and Pure reference health, the phase locked loop module includes a feedback loop with feedback loop parameters and selectively adjusts the feedback loop parameters based on a corrected parameter.

In other features, the phase locked loop module includes a fractional phase locked loop module and the number of rounds, including the scaling factor. The fractional phase-locked loop module comprises: a phase frequency probe, a MEMS smear spectrum (four) road communication and a touch reference frequency; a charge pump and the her fresh probe, a pressure control, and a feed rate; a scaling module, and the voltage controlled oscillator and the phase frequency group k, selectively dividing the output frequency by the first and second scaling factors, the number of the shirts is less than one (10), and the second scaling factor and the feedback The loop parameters include the modulation of the scaling divisor _, '★, 5: rMs ^ fbar, which is the communication with the fresh detection group; the vibrator, the bitrate output rate; the scaling module, which is The voltage-controlled oscillator has a second power and selectively divides the output frequency by the first and third numbers, and the second and δ_Σ modulations 11 are based on at least one of the correction parameters. The modulation of the scaling module between Zhou Zhengdi and the second scaling factor. And the second scaling factor is a divisor equal to Ν and N+1, respectively, and the generating circuit has a ===== oscillator circuit comprising: a semiconductor oscillator receiving the coffee self-tapping region, and _s Finely synthesizing an integrator, which includes: producing a reference fresh _ electric (N (6) or thin 8 200828780 film bulk acoustic resonator (fbar) resonator through the temperature of the circuit; storage device for storage = should the device's secret sense the at least one correction parameter of the integrated body as the sensed temperature, and used to select the correction parameter in the received reference signal for providing and the second (two) number, and the phase-locked loop device 'It is used for at least one calibration of the correction_ and for the ratio of the base loop parameter including the scaling factor; the number phase-locked loop module, and the feedback is set to 'the _S or FBAR resonance ^ set 甬= loop includes: a phase frequency detector device for communicating with the phase frequency detector and the phase frequency detector device for use in controlling the rate and rate; charge pump a device for loading the signal with the phase I to receive the sacred frequency and the electricity Speaking and screaming; swaying device, setting == frequency detector device communication, with _=^ == vibration = - city factor, and δ_Σ modulation device for dividing the brother based on the correction And the other parameters are adjusted between at least one of the first and second sub-subsequences; at least one of the numbers is corrected and wherein Ν is greater than zero. The divisor of the Ms or Ν and (4), the neon device, which has a drive The frequency plane is set to be: the semiconductor F is dirty, and it is used for receiving the _ vibrator, and the at least S or the bulk acoustic resonator (FBAR) resonance system (MEMS) or the film is selected to correct the reflection. - Do positive mixed parameters; select the phase-locked loop of the signal 'The lock path includes having back '= several clocks for receiving the reference based on the pull (four) tilting lion's number and 9 200828780 among other features, The phase locked loop includes a fractional phase locked loop, and the feedback loop parameter includes a ratio of a scaling factor. The method includes providing a phase frequency detector in communication with the MEMS or FBAR resonator and receiving a reference frequency; and providing the phase Charge pump communication for frequency detector communication. ^ In, special, medium, The method includes generating an output frequency; and selectively dividing the output frequency by a first and second scaling factor; and selectively scaling the first and second scaling factors based on at least one of the correction parameters Adjusting, in other features, the first and second scaling factors are respectively a divisor equal to N*N+1, and wherein N is an integer greater than zero. The phase-locked loop includes a delta-sigma fractional lock A phase loop, and the feedback loop parameter includes a modulation of the scaling divisor.

In other features, the method includes providing communication with the MEMS*FBAR resonator and connecting the frequency to the lake; and providing the charge with the phase_detection rider 2 her. The method includes generating an output frequency; selectively dividing the output frequency by a dead = scaling factor; and adjusting a modulation between the first scaling factors based on at least one of the correction parameters. The first and second scaling factors are divisors equal to N and N+1, respectively, and wherein N is an integer greater than zero. (FB^m circuit, which includes a microelectromechanical system (_s) or a film bulk acoustic resonator, m) #vibration (four) way, the resonator circuit generates a reference fresh, and includes: the semiconductor according to ί 生 生 has a drive frequency of the vibration _ said; and - gauge / or FBAR, Ξ two damper drive signal. a temperature sensor that senses a temperature of the integrated circuit and selects a function of at least one of the correction parameters to sense a temperature, wherein the drive frequency is based on the correction parameter. "," 针 ΐΪΐ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The method is used to generate a calibration slave. The heater, in other features, when the test data consists of a single temperature test point, the slope of the temperature characteristic straight line and the curvature of the predetermined temperature characteristic curve = ΐ The test f material 赃 默 默 默 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃 赃4 pre-U degree secret line and the predetermined temperature special time, the adaptive correction mode 2 predetermined = two 2 test button from two temperature measurement % constitutes a temperature test point, the self-inflicted green bribe I stomach 咐 枓 枓The slope of the characteristic curve of the curvature of the third-degree characteristic curve and the predetermined temperature-temperature characteristic line and the; the special::::: to ===3=the; the memory of the memory includes the -time programmable memory. The position of the entry. The record (f_ device!: raw; = machine:: ί _, the storage device stores the calibration parameters and should be the temperature of the integrated circuit. The t-number of the induced temperature, wherein a correction parameter of the drive is used as the parameter temperature; and the disabling device inputs the correction to the towel - Loss, adaptive school-based method based on the method of selecting the wheel to install the correct parameter of the correcting device from (4) "wire and resistance material secret. The heating device; =: special correction correction device using pre-temperature test points At the time, the body and G Ding, and the whole set are adjusted based on at least one of the predetermined temperature characteristic line and/or the pre-疋4 secret curve shot. When the job is ^^^ 11 200828780; := rate _:? 2?, including providing a micro-electromechanical system (MEMS) or film bulk acoustic resonance crying road, Wei shouting p reference fresh, red includes: semiconductor oscillator: receiving vibration drive signal. The temperature of the integrated circuit should be stored; the stored correction error == 2: The positive parameter is used as a function of the programmed temperature: = ί = the correction method used to generate the calibration parameters. The method includes selecting the group consisting of Si Function of the heating 11 from electricity (four) The sumless resistance heater includes at least the slope of the straight line of the temperature characteristic curve and the curvature of the pre-twist characteristic curve when the Snapdragon is tested by a single temperature. The test data consists of two temperatures. When the pilot composition is composed, the slope of the square characteristic curve and the curvature-neutral curve of the pre-granularity characteristic curve are at least a constant temperature characteristic straight line and the slope of the predetermined temperature characteristic curvature temperature characteristic line and the predetermined temperature characteristic curve Predetermined, Japanese, and based on the test dragon, the linear temperature measurement ff of the predetermined temperature characteristic is adjusted. When the test data includes the slope of the at least 疋/胤 characteristic line in the curvature of the third characteristic curve and the predetermined temperature The temperature characteristics are straight and complete; and based on the test data, the at least one side position of the predetermined body including the keel scale is adjusted. A memory integrated circuit comprising: a first temperature sensor that senses the circuit, a memory, a memory that stores calibration parameters and is based on the first temperature selection 12 200828780 ^ positive parameter At least one calibration parameter; a semiconductor oscillator that produces an output signal of a raw frequency; a heater that adjusts to a correction circuit based on the temperature test points input thereto; Correct the parameters. The selector «The peak __ heat exchanger from the ϋΐΐΐ ° the heater should return to the 'temperature sensor operation'. The additive is made up of a group of programmable resistor heaters. The memory comprises a -stitcher simulator integrated circuit, comprising: a first temperature sense county, the basin is used for: at least one number of revolutions of the heating device that is disabled to be positively reflected; the semiconductor oscillation device The fresh output of the second parameter, plus the remaining value, is used to adjust the post-disabled device and the disabling device is stored in the storage test point, the storage function. The heating device corresponds to the first device comprising: === heater and the electric resistance heater, the first temperature is selected, the first temperature of the integrated circuit is stored; the correction parameter is stored; based on the device, At least one calibration parameter in Sfn; providing a semiconductor oscillation energy 疋 pre-temperature, and causing the heater to lose the ii:s: after the correction parameter is stored in the memory: to input thereto - Some temperature test points 'self-adaptation as a function of the external passive component package rate heating: selected from the group consisting of a transistor heater and a resistance heater, ',, Yi body coffee: ΐ ΐ rate; it contains - The semiconductor is interesting, the output of the semi-guided sheep is ^, sensing the first temperature of the integrated circuit; using the frequency of adding 13 200828780 ========_ to disable the heater.杈 Most of the 杈 is stored in the memory in other characteristic tissues, the financial method includes __product, the temperature of the integrated circuit of the stomach, and the number of mouthfeel based on the temperature, wherein the output signal of the semiconductor oscillator; The method includes a correction parameter based on some of the rows input thereto. Generate calibration parameters. The method includes a function of adjusting the correction method adaptively. The heater crystal is selected as a group consisting of an external passive component ^ i ~ and a resistance heater. And adjusting at least one position of at least one of the curvatures of the pair of curves to determine the two straight lines and the predetermined temperature characteristic curve, the neutral curve is less than a test temperature, the lungs are straight and the lungs are fixed When the method further comprises at least a predetermined temperature temperature; at least one of the test point composition curvatures is adjusted and the predetermined temperature characteristic curve and the predetermined temperature characteristic curve are at least two of the predetermined financial characteristic straightnesses The curvature of the characteristic curve = 3 - 2 includes the slope of the linear characteristic line and the predetermined temperature and temperature characteristics to hide from the county; the slave base _ occupation dragon to the first temperature of the integrated circuit. When the dish is sensed, the sensor selects at least the sensitization of the accommodating pin and the output signal of the scaly-temperature-selected amplitude, wherein the frequency is a body oscillator, which produces a frequency and a width with a predetermined decoration. , the vibration-bias ίίΪί^Ϊί^ The oscillating circuit 11 includes a spectral oscillator circuit. The semiconductor oscillator includes a biasing circuit. The positive circuit receives the control signal and generates a bias based on the control signal. The bias domain biases the resonant circuit to adjust the amplitude. Including the power 14 200828780 pressure bias signal. The bias signal includes a current bias signal (10) circuit; and the inductance-capacitor component of the 395 communication with the LC circuit, the ii hehe corpus passive element from the electric salty - Lei Xuan Qr, Gong Tang cries the induction operation. The semiconductor oscillator output capacitor (RC) _ and the ring _ constituting the mode circuit 'including the first temperature sensing device to sense the integrated package (four) - (five) degrees, the age device , _Wei temperature selects at least one of the correction parameters; based on the output signal of the frequency and amplitude of the brother, wherein the frequency is the ensemble, to generate a number with the amplitude adjustment device. The control signal conductor semiconductor resonator device that produces the amplitude adjustment based on the comparison includes a spectral device for reading the vibration. The semiconductor device includes bias adjustment means for receiving the coupling transistor. The crossover of the vibrating device communicates with the wiper, and the solution of the output signal scale is selected as the external passive yuan. The heating device adjusts the first temperature. The disabling device adjusts the moxibustion device to the first temperature. Sensing device operation. The method of the semi-"ring_capacity (10) button device and the circuit breaker simulator integrated circuit includes: sensing the integrated body - a parameter; and selecting at least a wheel based on the nano-temperature selection correction parameter For semiconductor oscillation 11, the semiconductor oscillator produces frequency and amplitude based on the correction parameters; the amplitude is compared to a predetermined amplitude; the ground produces a control signal that adjusts the amplitude. Letter! Lu, the semiconductor oscillation 11 includes a circuit. The method includes causing the resonant circuit to have a resolver amplitude based on the control of the private number. The bias signal 15 200828780 includes a voltage bias signal. The offset record includes a current bias signal. The method also includes providing an inductive-capacitive (LC) circuit' and providing a cross-linking transistor in communication with the LC circuit. The method includes selecting a function of the input rate _ rate as an external passive component. The wire includes a heating H that adjusts the temperature; and the money is lost after the age of the tilting heater. The method includes operating the heater in response to the first temperature sensor. The search also includes selecting the semiconductor oscillator from the capacitance (LC) «H, • residual (RC) suspension and lion reducer groups. The semiconductor oscillator can include an inductor comprising one of gold or copper. It will be clear from the following to provide a summary of the subordinates. It should be understood that the details of the present invention are set forth in the Detailed Description, and are not intended to limit the scope of the present invention.惶Used for cattle [Embodiment] Π) Crystal output reducer conductor (CMOS) of the output signal 12 of the correct frequency 12 jT蓺 can be utilized in the case of a complementary metal oxide layer-half body (CMOS) Any process, such as Gong Yun, is built on a single semiconductor die.

曰曰: The body reducer simulator 1G may include a semiconductor neon that produces output money 12. Any _ semiconductor stun can be used, including ^ (4), r J 盥. The semiconductor oscillation n 12 includes changing the output signal two yt 6 can be any electrical input 'which affects the control of the output signal frequency ^ ^ : the vibration supply voltage and the voltage input of the varactor diode to the LC oscillator The good non-volatile memory 18 includes correction information 2〇 to control as a temperature frequency. Any type of non-volatile memory can be used. The temperature sensor 22 senses the semiconductor core (3) 上 placed on the semiconductor material of the semiconductor splicer 14 _, and the keeper 22 includes a thermistor and an infrared detector. The temperature-sensing baseline temperature or current temperature can be configured to measure from 16 200828780 ^ Figure = storage mode table for storing correction information in non-volatile memory 18 and ΪΪΪ is any form of database The correction of the constant output signal frequency including the CAM, the indexing scheme, and the lookup factor to the crystal oscillator simulator 1〇 is shown in FIG. 32. The data used to generate this curve can be tested in any way, including device level testing and batch mode testing. 'Getting a spear-level job μ __ correcting the job, and surely taking care of the semi-conductor to adjust the fresh correction factor in the case of temperature change. in

4: Conductor =:!: 3: The baseline value is mei - the pre-compared frequency and the temperature at which = the minimum operating temperature. This baseline value can be directly determined by measuring the measured value of the device characteristics. It is also possible to assign a plurality of baseline values from a single baseline value, for example, to a value known by a well-known circuit, from a predetermined circuit, or as a ratio, a frequency factor. The temperature of the semiconductor die is then increased by discrete rotation from about the lowest operating temperature to about the optimum temperature. The number of discrete steps is preferably limited to about 6 temperature levels to reduce the cost of the test, but = to make the knees spur steps. More preferably, a wafer heater is used to heat the semiconductor =, but any means for varying the temperature of the semiconductor tube can be employed. At each discrete step - the temperature of the semiconductor core and the calibration line used to maintain the output at a constant frequency can be measured. Preferably, the correction factor is a ratio used for the baseline value to obtain an adjustment of the control input. ▲ The positive factor can be varied from any baseline value, such as one. More preferably, for each temperature step = the single positive factor, the corrected liver is oscillated by the Guru conductor to dimension the output signal at any of a plurality of predetermined frequencies. For example, if the correction factor 1218 is determined to be a temperature change corresponding to c, then the control input of the semiconductor oscillator can be adjusted as a function of the correction factor 2, such as by changing the control input proportional to the correction factor. In another alternative, the ^ positive factor may be finer than the baseline value corresponding to the desired output frequency to produce a positive positive value to which the control input is adjusted. In another alternative, a correction factor corresponding to each of several output frequencies can be measured in each temperature step. 17 200828780 Knowing how to reduce the amount of light control by the amount of 1G in the Crystal New II, from the bottom of the map, for the crystal oscillator simulator from the same-batch semiconductor die The edge of the cockroach can be used to detach all the pieces. The crystal ship that was tested was fine-grained, and the total amount was . For example, it is possible to store the weight information of the batch in the single crystal oscillator simulator and to the 10 9 of each batch of the device, such as at the baseline temperature. Losing rate. The in-form listener can be used to correct the batch correction information stored in each device. Figure 4 shows another aspect of the crystal oscillator I simulator (4). The crystal oscillator is 11G-tested, and the similar phase of the pulse 4G_52_D corresponds to reading 'except for the body shaker simulator 40, which may also include separate or combined one or more heaters 54, controller 56, and select input. 58. The heater 54 can be located on the semiconductor die near the semiconductor disk Μ to raise the if: to use any type of heater 54 'including the transistor heater and the resistor H. Responding to the input from the temperature sensor 52 to operate at the temperature of the semiconductor die. The heater 54 can increase the temperature of the semiconductor die to a range of ^, which is a degree of returning to the temperature of the correction factor. In addition, the package of the Gushen 1 can surround the crystal oscillator simulator 40. In the case where the heater 54 can raise the temperature of the semiconductor die to the maximum operation f. Here, During the device test or batch test, only the correction factor corresponding to the maximum operating temperature needs to be determined, thereby reducing the cost. The heater 54 can also raise the 峨_turn semi-conductive fresh-correction temperature to several longitudinal temperatures for its positive factor. The second temperature sense wire can be called external temperature, for example, the ambient temperature miscellaneous temperature. The warmer of the heater can increase the temperature of the cast core to a close degree, while changing the temperature. The control input is changed by the extrapolation value calculated from the correction factor. The control fabric 56 can control the heater % in response to the hot temperature wire. The correction information 50 is escaped to obtain the control corresponding to the intermediate temperature. The value of the sugar, thereby adding ^ 18 200828780 , the logic circuit and the controller 56 can be any type of entity, including the processing disk ^ 58 can be used to select a specific output frequency from the range of output frequencies The Hi frequency is selected to be the flip-flop selection. The impedance of the external component of the input can be directly used as the part of the semiconductor oscillation 11 to select _^ ϋ For example, the impedance selection value of the vertical range can be matched to the predetermined rate. The $w piece can be any component 'but preferably a passive component, such as a resistor or a ^^^^1, an aspect of the crystal reducer simulator 100 having, for example, two select pins 102 and 104 connected To two external impedances 1〇6 * 1〇8. One = foot or more) external components. The crystal oscillator is connected to the external component of ΐίΐΣΓ to probe or get information. The obtained information can be connected to the 2nd and 4th. Corresponding value Three or more predetermined level ranges. For example, the resistance of the connected = 2 resistor is preferably selected to be one of 16 predetermined standard values. The one of the electric, one of the 16 output frequency levels One. In addition _ Most: Use: external components to reduce costs and inventory. Each external component can have two:) = the standard, each commission is very mixed = if you make = you can choose N different Qing If you use two two = 7 = meaning _, the face of the face is L. The face of the face includes the output frequency, frequency tolerance and baseline correction factor. Example simulator 1G () can have connected to an external resistor The single choice iT6 slave _n (8) hall 16 _ fixed output level corresponds to the possible person, preferably a resistor, capacitor or a combination of resistors and capacitors, two components of inductance, resistance, capacitance or a combination thereof. It can be directly or indirectly from any energy source such as Vdd and ground or any of the pins 1〇2 and 1〇4. For example, 'the external impedance can be connected to Vdd through the electric=electric sa_ way, and the Weirong key flip selects the pin 19 200828780

The crystal oscillator simulator 100 can determine a predetermined selection value corresponding to the measured value of the impedance of the selection pin. More preferably, the impedance can be selected to have a standard value 'for example' a nominal resistance value (eg, 470, > ...) corresponding to a resistor having 10% tolerance to reduce the Inventory costs. In order to take account of the f-measurement and external resistance, the impedance of the impedance value may correspond to a single selection value. The selection value is preferably a digit value, and the value can also be an analog value. For example, a measured resistance value from 24 (8) ohms to 3 ohms may be associated with a digital value corresponding to 2. The measured resistance value 2 from ohms to side ohms is associated with a digital value corresponding to 3. The measured resistance includes variations due to external impedance and internal measurement tolerance. The impedance measured at each of the selection pins is used to determine the range of phase value values may include 3 or more position values, preferably for each of the numbers from (4) 16. For each of the remaining chats, the number of health can be combined with the address of the second person. For example, a device having three select pins, each for interfacing to an impedance value of the value of the bit = can be described as 1_record address or ί address corresponding to the stored content is used Set the output of the device or the :_ value. Another _-slice can include two declining pins, each configured with an external impedance of a digit value within a range of 10 values. These digital read, ship or face, gambling address or 杳 lookup value can contain information for setting the characteristics of the crystal simulator. - Find the table 12==^ 模器 ^ & foot 122' The optional official foot 122 is used to connect the interface to the external resistor 1?4, the second / impedance 124 is used to select the crystal oscillator ^ simulator! Second, it is similar in function and range to external impedance and 1〇8. The correction circuit is measured as a characteristic by the measuring circuit (3) connected to the selection pin I22. For example, current can be supplied to the current of & ^. Any electrical and static means for measuring passive components can be used. An exemplary _*梓6 wood 4 in 1 feature, including dynamic and digital class transfer (DACs) (ADCs), can be generated with an external impedance envelope. The measurement is in the form of a digit or analog. The same output value is best represented - record _ Bu = value = 20 200828780

Value changes such as tolerance to external impedance values, interconnect phase loss, and sensing circuit tolerance due to factors including process, temperature, and power supply. For example, all measured external impedance values from greater than 22 ohms up to 32 ohms can be correlated with the digital output value "〇1〇〇,, and all measured external impedance values from greater than 32 ohms up to 54 ohms can be Associated with the digital output value “0101.” Considering the value change, the actual external impedance value is a subset of the measured external impedance value. For example, in the above case, the actual external impedance value may be from 24 ohms to 3 〇 ohm ' and from 36 ohms to 50 ohms. In each case, inexpensive low-precision resistors can be chosen to have intermediate values in the range, for example, 27 ohms and 43 ohms. Thus, can be used Cheap low-precision components to choose from a range of high-precision outputs that can be used directly to control the value of the device used to control the device characteristics of the crystal oscillator simulator 12. The value of this variable can also be selected from this The value is determined indirectly. The storage circuit 127 can include a variable value that can be selected as a function of the selected value. The memory circuit 127 can be any lion-like storage structure, including Addressing memory, static and dynamic memory, and lookup table. The month-shaped 'digit value determiner 128 for measuring the output value having a one-to-one correspondence with the external impedance value can then set the output value to A selection value corresponding to a range of external impedance values. ^ 7A B shows the relationship between the impedance value group 15 〇 and the associated selection value 154. The impedance value group 2 output value group 152 may have a one-to-one correspondence, wherein The digital output value group MU is replaced by a selection value 154 for each of the 15G towels. The impedance value from the minimum resistance of the 1 if impedance value is divided into 3 or more groups, each group having - The nominal impedance value of rf: rf is chosen to have an interval between the nominal impedance values. Here, the resistance value of 27 and 43 _ has a 16 ohm interval. The interval between impedance impurities is Lion, Ran Ke to make bribes mathematics _ key between groups of two Γ /, ϊ, linear and exponential. The interval between impedance groups can be based on any of these groups

Zt. tt ? ΪΓ ' (-age value) ^ (mean value) . ^ Sex, case ^ 曰 曰 曰 曰 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗 阻抗Resistance to voltage and current sources, and the reliability of the measurement circuit. These practices are due to, for example, process, temperature, and power supply variations. Figure 7B shows the relationship between the impedance value range 156 and the phase value 158. The impedance value of 21 200828780 range 156 has a direct correspondence with the selected value 158. The impedance value that varies from the minimum impedance value to the maximum impedance value is divided into three or more groups, each group having _ nominal impedance. The nominal impedance value for each group is selected to have an interval between the nominal impedance values. Here, the values of the impedance value group of 27 ohms and 43 ohms have an interval of 16 ohms. This direct correspondence between the impedance value specification 156 and the associated selection value 158 can be achieved, for example, by a non-linear analog digital converter (not shown). Referring again to Figure 6, the address generator 13A can determine the memory locations corresponding to the digital output values associated with the external impedances connected to the select pins, which can be grouped in any manner, for example, for a single selection. A list of pins, a lookup for two select pins, and a cubic table of three select pins. The controller 132 can set the crystal oscillator simulator 12_ device characteristics as a function of the variable value: number. The value of the variable can be generated by recording, and the content of the memory location corresponding to the external impedance of the thief from the fish connection to the selection pin is determined from the chat value. Select pin 124 can also be used to implement additional functions such as power reduction (10), d=wn^, powerenable, mode selection, reset, and synchronization operations. In this aspect, select pin I24 becomes the multi-function select pin for configuring crystal oscillator simulator 12 and for additional functionality. In one aspect, a first range of impedance values connected to the multi-function select pin 124 can be used to configure the crystal oscillator simulator 120, while the operation of the additional function can be applied to the voltage on the multi-function select transistor #foot 122 or The current, or the impedance value outside the first range of the impedance value, is controlled. & Figure 8 shows an aspect of a sequencer assembly 2A for generating an output having a periodic waveform. The vibrator assembly 200 includes a crystal oscillator simulator 2〇2 that drives a phase locked loop (PLL) 2〇4. The crystal oscillator simulator 202 can be similar in function and structure to the evening aspect of the crystal oscillator simulator described above. The oscillator component 2〇0 can include any type of ριχ 2〇4, such as a bit PLL and an analog pll. Multi-function select pins 206 and 208 can be used to select operating parameters for PLL 204, such as a divider factor. The multi-function select pin 2〇6 and the emitter are used for the crystal oscillator to simulate the control and operation of crying = 2, for example, the output frequency selection and the reference clock for receiving the lining correction. Outside; resistors 210 and 212 can be connected to multi-function selection pins 2〇6 and 2〇8 to select the operation ^ 22 200828780 rate. The range of values of the external resistors 210 and 212 corresponds to the selection of different operating frequencies. Each of the external resistors 210 and 212 can be used to select one of the 16 predetermined operating frequencies. The external resistor 210 and the mouse can be combined to select from 256 operating frequencies. To control multiple functions, each of the multi-function select pins 206 and 208 can receive signals in different voltage ranges. For example, a multi-function selection pin 206 can be connected to the external resistor 21A, and a voltage within the range of 2 volts can be generated at both ends of the external circuit breaker 210 to determine the resistance, and the multi-function selects the pin 2 The 〇6 can also receive reference clock signals operating in the range of 2 to 3 volts. The 214 can detect the signals on the multi-function selection pins 206 and 208. ° Figure 9 shows the spread-spectrum oscillator for generating an output signal with a variable frequency. This layer

The pro- lion includes the crystal splicer simulator 3〇2 of the PLL304. The frequency control device connected to the vibrator simulator 3G2 can dynamically control the output frequency of the crystal vibrating simulator. The frequency control device can be any device or device including a varactor diode for controlling a bias current source of the semiconductor oscillator and controlling the control input voltage of the cries capacitor. Figure 10 shows the operation of one aspect of the crystal oscillator simulator. At block 4 〇 semi-conducting, the oscillating person is used to generate an output signal with a periodic waveform. Continuing to the frame shift, the & oscillation can be corrected to produce a constant solution within a predetermined temperature. The method may include causing the temperature of the semiconductor die to vary at a predetermined norm, and measuring the correction to maintain a constant output frequency. The temperature of the die can be measured near the semiconductor vibrating. The correction information may include a control input value for maintaining a constant output frequency to the die temperature. The correction information may be stored in the transmissive memory of the semiconductor tube red. In block 4^, the operating frequency can be determined by probing external components. Continue to the frame outline 1 = output signal of the operating frequency. At block 4〇8, at the semiconductor love = (four) temperature. , _ to the frame, the semiconductor die can be heated or cooled to itch the temperature of the die to one or more predetermined temperature levels. At block 412, the control input can be manipulated as a function of the temperature of the tube to control the temperature of the die. Riding other thermostats to control the input value from the stored calibration information. Following the _ box 41 ^ rate can be secretly modified _ as a fresh control money secret number. Frequency 23 200828780 I II ^ ^ ^ One aspect of the low power oscillator 320 used to generate periodic signals. The low-power active Shishi Zhenying 324 performs a corrected crystal slitter simulator milk. The simulator 322 is typically in an off state to reduce noise. At the interval of the 鱿, the ^ 曰 振 振 振 simulator 322 is switched to the open county to the active miscellaneous 324, and the active shi yi yi 324 consumes less work than the crystal oscillator simulator 322. The 324 is continuously operated and the crystal vibrating simulator 322 only intermittently operates the overall secret of the button 32G. Any type of active 矽 vibrator, =^ vibrating and RC vibrating wire can be used. The active; 5 epoch 324 can be configured in any aspect of the invention in which the book cap is shown. The color m32ir^ is determined to be between the active Shishi vibrator output and the body vibrator simulator output. 324 ☆ 328 can generate control signals based on the frequency error to the active Shi Xizhen 322° ^ Self control. The controller 328 can also receive from the crystal oscillator simulator. The signal 4 can include the following temperatures, for example, semi-conductivity and environmental conditions, to include correction information for the active arc oscillator 324, the correction The correction information believed to be similar to the crystal oscillator simulator 322. The frequency error can be used to set the initial value of the control number and then the temperature combined with the active distortion correction information can be updated to update the control signal during the decrease in power of the crystal oscillator simulator 322. The temperature sensing circuits of the two simulators 322 can be continuously powered, from y to provide continuous temperature information to the controller 328. Control signal 334 can be digital to n. If the control signal is digital, the digital analog can convert the control signal into an analogy. The ^AC) 330 control signal 334 provides for the supply of voltage and/or current to the power supply of the active Shihua vibrator 324. For example, the rectification 15 332 can control the voltage level of the supply voltage. In the 曰 ride, the active worm 324 is typically in a conducting state that produces a periodic output signal. Passed to the sunny. At the battered age, a portion of the king of the crystal killer can be turned off (p〇wer〇ff) to save the work 2 binary tree to the crystallizer simulator 322. Then use the stored correction The information is corrected by the semiconductor oscillator of the body vibrating reader 322. The frequency of the output signal of the crystal ringing mode 322 is compared with the frequency of the wheel signal of the active Shixi oscillator, which is 24 200828780. The frequency error of the active sway oscillation H 324 is determined. The control signal rabbit 334 subtracts the frequency error and changes 'resulting in a power supply voltage drift from the voltage rectifier 332, thereby changing the output frequency of the active 矽 oscillator 324 to reduce the frequency. Error 12. An aspect of another low power oscillator Mg for generating a periodic signal is included. The low power oscillator 350 includes a crystal crying request to communicate with the charge pump oscillator. In the low-power consumption, the whole or part of the crystal modulo (4) 352 can be reduced in power consumption. At a predetermined interval, the crystal oscillator simulator 352 is boosted (p〇wer Up) and used to correct the charge pump oscillator 354. The predetermined interval can be determined as a function of any circuit parameter such as operating time, temperature change of the semiconductor, ambient temperature change, temperature of the semiconductor The power supply voltage changer 354 can include an electric rush 356, a circuit pulsator, a VCO 360, and a phase detector 362. The charge pump 354 is operationally Similar to the conventional charge pump oscillator, the reference input of the phase detector 362 receives the reference clock signal from the crystal oscillator simulator 352. The multiplexer 364 receives the crystal stitcher simulator 352 and the charge system slit. The output of the output is selected and passed through the multiplexer 364 to the phase-locked loop 3=. The phase-locked loop 366 produces the output signal as a pull from the crystal oscillator simulator and The function of the output signal of the pump oscillator 354. The pulsator 354 is typically in a conducting state that produces a periodic output signal. The 4th day oscillating state simulator 352 is normally turned off. All or part of the oscillator simulator 352 can be turned off to reduce the power consumption initial setting, and the correction information stored in the _ 352 is corrected for the crystal oscillator. . The body vibrator simulator is released and compared with the output signal of the charge pump oscillator 354 to determine that the VC_ is subsequently controlled to reduce the phase error, thereby causing the wheel to exit. The signal is corrected to the output of the crystal oscillator simulator 352. These output signals can then be selected and applied to the ρι. Referring now to the figure (10), the integrated circuit 5 (10) includes a crystal resonator mode 25 200828780 which generates a clock signal, and a device 502. One or more of the circuits 504 in the integrated circuit 500 receive the clock signal. The crystal oscillation can be implemented as described above in connection with Figure M2. The circuit can include a processor 512 or other circuitry as shown in FIG. External component 5〇6 can optionally be used to select the clock frequency of crystal oscillator simulator 502 as shown in Figures 13 and 15. ’,

Referring now to Figures 16-18, integrated circuit 518 includes clock signals for circuits 522_b 522-2, ., and 522-N (collectively referred to as circuit 522) that are generated at one or more other clock frequencies. The Japanese Guardian divides the 520. The circuits 522 can be interconnected to one another in any manner. For 1/χ, γ, and/or Υ/Χ adjustments, clock divider 520 divides the clock by an integer (e.g., X') and/or multiplies the clock signal by Υ. The clock divider 52A can also use one or more additional ratios and domain divisors to generate different clock signals for the other circuits 522(5). The clock division method 52 outputs a circuit of N_1 clock signals to the integrated circuit 518 as shown. In the stomach map 17, one of these circuits includes a processor 53A. The processor 5A can be coupled to the clock divider 52A instead of the crystal oscillator simulator 502, and/or connected to the clock divider 52A in addition to the crystal oscillation crying simulator 502. Additional circuitry 532-Bu 532_2 and 532_ are both in communication with clock divider 520. In Fig. 18, the crystal oscillator simulator 5〇2 provides a clock signal for use in the integrated circuit 518, the processor so, the graphics processor, the memory (4) and/or one or more circuits are also In addition to the length of 1 for the day and the pulse to divide the law (not shown). Processor %, graphics processor, memory 542, and/or other circuitry 544 may be interconnected in any suitable manner. w η Referring now to Fig. 19, the integrated circuit _ includes one or more circuits 602 small 6〇2_2, ··, port 602-Ν (collectively referred to as circuit 6〇2) and low power oscillator 32〇, which is low The power regenerator gamma = operation as shown in Figure 11. One of these circuits may include the processor shown at (d). A clock divider (not shown) as described above is also provided. The integrated circuit (1C) is generally packaged in the package material. The encapsulating material can include plastic. Ic includes a cymbal which is connected by a bonding wire to the lead of the lead frame. The IC substrate, the f-portions of the knot can be loaded into the middle. The gates, which are commonly used when packaging 1C, may change over time. Miscellaneous changes may cause the vibration rate of the wafer oscillator to follow: this change in the seal may be due to a change in the dielectric loss of the package material, and this change in the package may also be due to the different moisture in the package material. The degree of water absorption is caused by 26 200828780. As a result, the seam material may be off the correction accuracy. in. The encapsulation material (10) that is encapsulated in her technology is likely to have a negative effect on the accuracy of the correction when the door 3' ΐΐίΓ7()4 includes a plastic material. As used herein,

Field renormalization ‘, 、, 疋 Because the dipole in the material attempts to vibrate with the incident wave (electricity), the “molecular friction” of the dipole in the material. For example, when it is in the micro; 箪: the dipole vibration associated with the moisture in the food is heated and heated. For example, the absorption of water by a certain type of plastic may also adversely affect the accuracy of the correction. Because the increased water in the water-containing material tends to increase the dielectric loss of the encapsulating material, he may also be a low-stress material. High stress materials may affect the circuit characteristics of adjacent circuits, for example, by changing the length of the via. As used herein, the term low stress means that the encapsulating material tends to be stable and does not change the circuit due to stress changes. In some implementations, the dielectric loss factor (DLF) of the encapsulating material is equivalent to the shovel Tefl in the relevant work (eg, greater than 1 GHz). Figure 21 shows the The integrated circuit 710 is packaged in a package material 7M having a low dielectric loss, and the integrated circuit 71 has a wafer semiconductor oscillator 7H using temperature compensation. The encapsulating material m can be a plastic encapsulating material having a low dielectric nano. As shown here, Xiao's surgery. . Low dielectric loss means that the dielectric loss is less than or equal to the Teflon material at the relevant operating frequency of the IC. The operating frequency of 1C can be greater than 1 (5112 and / or 24 GHz. Package material 714 is shot to include Teflon® ' Tefl_ p〇lyChl 〇r〇TriFlu〇r〇Ethylene (PCTFE), Teflon® Teflon® chlorinated ethylene propylene copolymer (FEp), perfluorochemical (PFA), Tefzel® and Tefl (m8 copolymer (ΕτρΕ) of ethylene and tetrafluoroethylene) Low dielectric loss plastic, south quality glass, air and/or other materials. It is conceivable to have a dielectric loss of less than or equal to Tefl〇n, and other packaging materials. The package material can have a lower water absorption. 27 200828780 An exemplary C-shaped circuit package 718 of the integrated circuit package of Figure 21 includes an integrated circuit, and the integrated circuit 4 includes a chip ϋ. The lead 732 of the 33 is connected by a bonding wire 734. To the slab of the integrated circuit. Can be = know, f Cheng electric pure Yang on the job of the nuclear degree Na's piece crying part: the bond line 734 * integrated circuit 724 is packaged in the package material t J. Material 736 can塑胶Plastic with low dielectric loss, although Realize that other types of packages and/or any suitable products such as == crystal package (Mp) may be used in the front or in this implementation and/or other implementations.

The compensation turns over and replaces the integrated circuit package TM including the wafer temperature ** + ¥ body vibration U1. In the present embodiment, the semiconductor oscillator plus a layer of epoxy material TM comprising a very thin integrated circuit is bonded to the integrated circuit substrate. The material is read to have a low dielectric loss. The 750 and the touch circuit substrate 74G are employed in the packaging material. In this case, the consumption is not important because of the distance between the inductor 742 and the encapsulating material 76G.

The change in dielectric loss and/or other characteristics of the St f package material is not a matter of time, and the encapsulation material may be a low dielectric loss material. Although the glass layer is on the circuit \\ on the circuit i', the _ layer can also be limited to the close proximity to the semiconductor oscillator. Figure 24 and Figure 25 show the wafer semiconductor ir according to the present invention. :, integrated circuit package. This embodiment and the embodiment T described above are shown in conjunction with FIG. /, / / glass layer 744 defines a cavity 746. The cavity 746 is adjacent to the inductor 742, and f, 敎 extends through the inductor 742. A 752 is formed between the inductor 742 and the glass layer w. In areas other than the cavity 746, the thin layer of epoxy material 750 is between the glass = 44 and the bulk circuit substrate 74G. The glass layer 744 can be side defined to define the cavity and be secondarily in the epoxy material. The glass layer may adjacently comprise a plurality of glass layers, and at least one of the layers has a cavity formed therein. ,,: t test, the capacitor of the wafer semiconductor disk can be supplemented by the temperature as described above. However, it will be appreciated that there are other ways of adjusting the oscillation frequency independent of adjusting the capacitor and/or inductance of the semiconductor oscillator. 28 200828780 Road 5 is in the tf/7 diagram, and the integrated circuit 'includes a fractional lock phase with a temperature compensated input. The fractional phase lock loop includes the integrated circuit that receives the above operation. The phase frequency detector 836 is based on the reference frequency and the vco frequency 2 刀 刀 knife signal. The differential signal is output to the electric county _. The output of this charge 840 is input to the Zen loop filter 844. The loop ^ clerk, the _ _ with the vco output = being. The turn of vco 846 is fed back to the zoom ‘two ===! call _ job: ί TM ;---- degree signal, which is used to address the store in the secret 856 = ^ 858. Job Wei 85G. The ratio of the divisor and Ν+1 used by the money test is adjusted. Xian now / test 28th diagram ‘ shows the integrated circuit including temperature compensation input _. Σ score ^ self-loop 858. The selected correction information is used to adjust the output of the Σ_δ modulator 87〇. | Correction. The heart can adjust the modulation between the divisor N and N+1 used by the scaling circuit 850. Now with the reference of 29 ® , the flow _ __ listens to the position and uses the linear and the calculated wire to produce a corrected tilt. Controlled bribery. In (4) Qing 1', the sampling calibration point is measured at multiple temperatures. In step 9%, the linear curve fitting algorithm is "generated by the other temperature 阙 curve between the suspect points ^ in the turn, the control ends. Now refer to the 30th figure 'flowchart 92 〇 display for measuring the sampling correction point And the high-order method is used to produce the step of correcting (4). The step shown in Fig. 3G can be realized by using a differentiator including Xiyi and German. The control starts from the step milk. In the step like: at a temperature The sampled calibration point is measured. In step 926, the 'high order curve fitting algorithm is used to generate a curve for other temperature points between the sample points. In step 928, the control ends. Referring now to Figure 31A-31G' display Various exemplary implementations of the present invention. Referring now to Figure 31A, the present invention can be implemented in a hard disk drive. The present invention can be used only in any integrated circuit 'e.g., in Figure 31A. The landmark is a dirty signal processing circuit 29 200828780 and/or one or both of the control circuits. In this case, the circuit and/or the control circuit are dirty and see, the signal processing code and/or encryption, execution in the yoke 1000 Cleverly know ^: circuit ( Not shown) can process data, perform magnetic storage, pro- 嶋 ^ all = 彳 = ^ shipboard data and / or from ^ 1008 telephone, media or MP3 player, such as personal digital assistant The action can be decorated by the hometown (four) silk i. brain surface (RAM) ' electronic data storage device. ~ _) only ° 恍 恍 body (ROM) and / or other appropriate actuator monthly map can be 3 = _ A domain processing touch circuit in a digital versatile disc _), for example, one or both of the large-capacity sub-circuits that are collectively 〇1〇 in the 31B W and the DVD drive 1012 and/or 苴He ^ Road Magic Coffee 1010 signal processing circuit and / or control circuit 2: his circuit (not out) can handle the ship 1G16 read (four) chest or crane man Wei body ι = = ίί Thanks, dvd face tender The 1G18 communication of the large-capacity data age device that stores the poor materials in the non-smart way. The large capacity=material storage device can include the hard disk drive (Na). The lion can have the configuration as the HDD. It may be a mini-roller comprising one or more discs having a diameter of less than about 18. The DVD 1010 may be connected to a memory delete, for example Please ^, r〇m interpret (such as flash memory) and or other appropriate electronic data storage device. Now refer to the sic diagram, the present invention can be achieved in high-quality TV (10) τν) delete: this The invention can implement any integrated circuit, for example, in the first batch of the towel is used as the general landmark 'processing circuit and / or control circuit _ or both, the thief brain wireless local area network (WLAN) connected π and / or Large capacity _Wei set. Gu leaks receive wired or wireless grid 30 200828780 ί=== for the output of the display 1026 ¥ signal. In the ambiguity (not out) can process data, perform coding and / or encryption, Execution 3 and / or execution may require _ no class compensation ^ ^ processing. π t-style bedding HDTV 1〇2〇 can be used with large-capacity equipment that stores materials in a non-volatile manner, such as magnetic storage devices,

There is a configuration shown in Fig. 31B. hJd= is a package included! A DVD can be a mini-pan of the disc. You can connect to =====', low latency memory (such as flash memory), and =^. HDTV brain fine Yao _ 秘 晴 9 9 = = = ==================================================================================== In the - (4) mode, the invention realizes the transmission age control system 1032, and the transmission control system 1G32 receives the input of two red multiple inductions H. The money H is, for example, a temperature sensor, a pressure sensing device, a gas flow, and an air flow. An inductor and/or any other suitable sensor, and/or a 3^ output signal 'eg' engine operating parameters, transmit operating parameters, and/or other control signals. The invention can also realize the health of the vehicle. The 1040 can similarly connect the signal and/or output control of the device to the one or more output devices 1G44. In some implementations, 'control secrets can be ^Blocking Brake System (ABS), navigation secrets, long-range ships, vehicle miscellaneous tracks _, lane departure systems, adaptive cruise control systems, vehicle entertainment systems (eg, Part of stereo, dvd, CD, etc.) Other implementations are also contemplated. The transmission control system can communicate with the large-capacity data storage device 1046 that transfers the volatile side (4). The mass data storage device 1046 can include optical and/or magnetic storage devices, such as a hard disk drive HDD and/or DVD. At least one hdd may have the configuration shown in the 31st figure, and/or at least one DVD may have the configuration shown in Fig. 31B. ^ may be a mini hdd comprising one or more discs having a diameter less than about 1.8". The transmission control system 1032 may be connected to the memory 1047 'eg, ram, ROM, low latency", quotation 31 200828780 (eg The flash memory) and/or other suitable electronic dragon storage devices 1 〇 32 can also support the connection of 0 1 〇 48 and 1 via the WLAN network. The work H 1 is 4) 〇. It can also include a large capacity. The data storage device 1 recalls the body and/or the m interface, and the present invention can be implemented in a circuit that can include a communication antenna. The invention can implement any integrated circuit, for example, by her in FIG. 31E. Ground & for 1052 inferior Wei Li circuit and / / Wei Wei - or both, line 2 2 connected π and / or large capacity « county. In the form of some real money _ including microphone view, audio output 1G58 (for example, The speaker hole shows 0 lion and / or input device test (for example, keyboard, point selection device, ^ output). Action (four) towel Wei (four) or ^ ^ and / = other circuits (forest out) It can be transferred _, perform code encryption, simplify data and / or perform other mobile phone functions. At

The Jt mobile phone surface can store data in a non-volatile manner = communication, and the large-capacity data storage device is, for example, a light and/or a hard disk drive HDD and/or DVD. At least one may be accompanied by ^ and / or at least - a DVD may have the configuration of the 31st. ^ Mini-single discs with one or more small diameter _U". Mobile phone touch = 1G66, for example, R, M, low-time memory (such as flash memory) and / or The (10) when the electronic device _ device. _ _ delete j WLAN network interface 1068 and WLAN connection. Fork, 甶, now refer to the 31F map, the current day and month can be implemented in the set-top box 1 〇 8本中。 The invention can be = any integrated circuit, for example, in the 31F picture is marked as a total surface or control texture - or both, machine to Na's cry and / / potted two two" page 仏The display device 1088 is, for example, a signal processing circuit of the television set and/or the monitor box 1080 and/or the control box 1080 can be stored with a large-capacity data storage device 32 that stores data in a non-volatile manner. Brain communication. The mass data storage device 1 may include optical and/or magnetic storage devices such as a hard disk drive HDD and/or DVD. At least one leg can be slightly configured as shown in Figure 3, and/or at least one DVD can have the configuration shown in Figure 31B. The HDD may be a mini that includes one or more discs having a diameter less than about u,. The onboard surface can be connected to a memory 1G94, such as a face, R〇M, low latency memory (e.g., flash memory), and/or other suitable electronic data storage device. The set-top box 1〇8 is launched to support the connection to the WLAN via the WLAN network interface 1〇96.

^ Referring to Figure 31G, this day and month can be implemented in the media player. The present invention can implement any integrated circuit, such as the signal processing circuit and/or control that is generally designated in Figure 31G, or both, and the continuation of the device. In some real-life styles, the media player includes the display of ^1〇7 today 2 such as keyboard, trackpad and the like. In some implementations, the media broadcast uses graphics, the user interface (called the (10) generally uses the display window 5 / into 1108 only menus, drop-down menus, icons and / or pointing interface. Media playback audio output, Na, speaker And/or an audio output jack. The No. 4 processing circuit of the media player 100 and/or the control circuit Lan and/or other circuits (not touchable and/or domain, tear meter m other perch media other media player 1100) It can communicate with a large-capacity data storage county 1110 that stores data in a non-volatile manner, such as compressed audio and/or video content. In some &: good = reduced audio files include just format or other Appropriate compressed audio and/or video 2j valley files. Large capacity lean storage devices may include light and / or magnetic; magnetic = two and / or Qing. At least one can have the same as shown in Figure 31A The match, / or to ^ - DVD can have the configuration shown in Figure 31B. Face or Ϊ 、, _ W with the mini-coffee. Media player _ can be ' 114 'for example, can, R 〇 M , low special coffee _ (such as flashing ΐΐΐ or other appropriate electricity Data storage device. Media player _ can also support other real-actions. "Society: ^ now mode now refer to Figure 32A-32D, showing the seed circuit circuit package, the integrated circuit package junction 33 200828780 II The material acts as an "island" adjacent to one or more selected structures of the chopped wafer, or a plurality of layers of annealed glass or epoxy material, which can be made in a stone cup. In the case of Fig. 32A, the replacement integrated circuit package 1200 includes a stone slab 1204. The annealed glass layer or portion is __ or - part. i glass i layer = , stress reduction (four) The change of the annealed glass paste layer 1 tends to isolate the full knife of the chopped wafer from the "variation of the package properties". The dielectric property is, for example, the dielectric loss of the mold material 1208. And the female stone H 1204 may include the above. The semiconductor oscillator. The annealed glass layer 1206 may include a temperature verification of 3 = ^ 敎 。 杂 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 损坏 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 Can use the following methods and / or Use any other suitable method to fine the glass layer: screen _ method, dipping method, mask method. Material: L Figure 2 'Replacement integrated circuit package 1210 includes applied to glass paste or epoxy material · Or New 1212. The material (4) layer 1212 can be accommodating conduction 3 can be = value t material layer 1212 can be (iv) liquid or solidified body. The conductive material layer is scooped with the scoring station for 1 day. The conductive material layer 1212 can be Any suitable means is to be immersed in a container, such as a disk, containing the material of the material, and the layer of material 1212 tends to reduce electromagnetic interference from external devices. Up to now, the integrated circuit package 1220 includes an annealed glass paste layer 1206 which is selected for a selected portion of the layer. In Fig. 32D, the integrated circuit package 1230 includes an anneal, a glass water or a material portion and a conductive material layer 1212. The conductive material layer m2 may cover the annealed glass polylayer while contacting or not dicing the wafer 12〇4. Refer to Section 33A-33D ® ' to display the replacement integrated circuit package now. In the map, the integrated body is included in the circuit, and the layers are the circuit components 1242 adjacent to the dream wafer 12〇4. In Fig. 33B, the replacement integrated circuit 曰 = 250 includes an annealed glass layer and a conductive material layer 1212 which are positioned adjacent to the oscillator 1252 of the Asahi Day 1204. In Fig. 33C, the replacement integrated circuit package 126 includes an annealed glass paste layer (10) 6 and a conductive layer. The layers are positioned adjacent to the inductor 1262 of the Shihua wafer 1204. Inductor 1262 can be a wafer inductor n', such as a vocational inductor. In Fig. 33D, the hybrid circuit package 1270 includes an annealed glass layer 1206 and a layer of conductive material m2 positioned adjacent to an oscillator circuit 1272 having an inductor 1274. The annealed glass paste layer also tends to reduce the change in stress that may occur over time. Annealed glass slabs (4) All or - part of the age electrical properties depend on fine, dielectric properties such as the dielectric loss of 疋 cast sheet material. This is especially advantageous when attempting to correct with temperature as described above.

Now > test No. 3仏-34〇' shows the replacement integrated circuit package, the replacement integrated circuit package = including the annealing of the fine-grained ring material part and the cut; the social part of the towel produces the air between the P, the glass or rhyme. In the 34A-34B diagram, the integrated circuit package 丨 bis and G are formed on the Shi Xi wafer according to the interval relationship between the anneal and the glass slabs. J ft 1306 can be formed as described above. Mold material 1308 can be used. Subsequent processes such as polishing or other steps of the file 1306 can be performed to provide a flat outer surface. The glass or ruthenium layer 1310 is supported by the AGP portion 13 〇 6 g = the viscous bonding material can be used to bond the glass or i3ig to the AGp portion and the glass or sap layer 1310 on the reducer 1320 in the first wind pattern = == An air gap 1324 is formed above the road 1322. Air barrier 324 & for materials with low dielectric loss (empty = Yingke, _ __ vibration, age, wire is ^^ in Figure 34C-34D, integrated circuit package 134 can be formed as described above. It can be performed on the epoxy material 蓺 ^ (10) supported on the Shi Xi wafer measurement. ^ Surface material ^ glass ^ layer 1 view glass or tile 131G bonded to the epoxy material part ^, = raw = combined The material can be used to place the 34C 11 1320 34D t air gap 1324. The other circuit 1322 is formed above with reference to Figures 35A-35B, showing the 35 200828780 planar circuit package including the glass or germanium portion that creates the air gap. In the 3SA In the figure, the integrated circuit package is cut to include the limited "c, open her glass or Shi Xi part Cong. The "c" shaped glass or Shixia part 1382 can be ^^, ^ to - part of the air. The gap 1384 is positioned above the vibrating wire 132A in Figure 35B. The integrated circuit package 1390 also includes a germanium layer 1382 defining an air gap 1384. The air gap 1384 is positioned above the circuit 1322. 5 Reference is now made to 36A-36C Figure shows the bulk circuit structure I used to manufacture the above integrated circuit package 4 (8) wrapped yarn crystal 14〇4, multiple __ AGp and ^ and B (collectively referred to as 141G), and glass layer 譲. The integrated circuit is produced by the city's multiple parts of the silk, the amount of circuit can be as described above It is encapsulated in a mold material (not shown). In Figure 36, the tantalum wafer 14〇4 may include one or more bond pads 142〇. The cuts of the 14Μ-! and (4)4_2 hybrid layers can be from (4)4_3 The slanting of the slab wafer is opened to provide a clearance for attaching the bonding wire (not shown) to the photographic film Ί 36C, which is shown after being separated from the integrated circuit structure 1400. One of the integrated circuits 145. Referring now to the 37th, 37th, the integrated circuit package 145G includes 11 wafers, a stone wafer, an IW annealed glass, or an epoxy material portion (4), annealed. The glass poly and/or epoxy portion H10 is coated with a layer of conductive material. In the PA diagram, a portion of the wi〇 is impregnated into the container of the package = conductive material, and the wafer can be cut along one or more strips. Line 1462 is cut by a male and may include a combination of spacers 146, as shown. Referring now to item 38, age The steps of the method 1 of manufacturing the mis-encapsulation of the f 32A_32D diagram. The control begins with the step blue. In the step brains, the glass paste layer legs are applied to the surface of the stone lining, and/or the 9 crystals. In the surface area of (10), in the first step, 'the glass layer (10) is annealed by placing the stone plaque in the furnace, and the temperature of the furnace can be set to be sufficient for the glass layer 12〇6. The temperature of the melting. For example, the temperature of _ 4 GG ° C for a predetermined period is sufficient to anneal the glass paste without loss of the (four) sheet 12 〇 4 . In the step 1 specification, the conductive material layer (10) is recommended to be laminated to the annealed glass paste layer. In step 1510, all or a portion of the stone wafer 12〇4 is loaded into a molding material 12〇8 and/or other suitable molding material such as plastic, other materials described herein. In step 1520, control ends. 36 200828780 In each of the foregoing embodiments, the annealed glass paste may be replaced with an epoxy material on other wafers or other substrates. ^ Yahe Now refer to Figure 39, showing a crystal oscillator simulator integrated crystal oscillator simulator 1C 1550 can be isolated integrated body straight). The circuit of the circuit ^4 tastes that the dragon material includes the output circuit and/or the general support crystallizer simulator = mulberry

Soup... two of his circuits. By providing the crystal oscillator simulator as an isolated circuit, the crystal oscillator simulator provides a reference frequency for any other circuit without requiring integration. . The crystal oscillator simulator ic (10) produces a stable reference frequency as described above and below. The crystal oscillator simulator 1C 1550 includes a non-volatile memory 1552 that stores the temperature-based calibration data described herein. The semiconductor oscillator output 4 provides a temperature compensated reference frequency. The temperature sensor 1556 senses the temperature of the integrated circuit 1550 and outputs the sensed temperature to the non-volatile memory 1552. The heater 1558 can optionally be used to heat the IC 1550 to a predetermined temperature during calibration. The disabling circuit 1560 can be set to disable the heater 1558 after calibration. For example, the disabling circuit 156A can be a single use circuit such as a dissolved wire or an anti-fuse. During testing at the factory after manufacture, the heater 1558 can be used to heat the temperature of the crystal oscillator 1C 1550 to one or more desired temperatures, such as operating temperatures in a typical environment. After collecting data at this temperature, the heater 1558 can be used to adjust the temperature of the crystal oscillator analog 1C 1550 to one or more additional temperatures for further testing and calibration. The disabling circuit 1560 can be used to disable the heater 1558 after the test is completed. Disabling the heater 1558 can be performed in the factory. The end user of the crystal oscillator simulator IC 155〇 may not have the proper high-precision reference frequency and therefore may not be able to perform accurate testing and calibration. Moreover, it is also not possible to use the heater 1558 during operation as this tends to reduce the efficiency of the 1C 1550. It will be appreciated that although the foregoing description relates to crystal oscillator simulator 1C 1550, a similar method can be used with any of the other crystal oscillator simulators described herein. 37 200828780 In the step of deleting the towel, the integrated circuit with the heater is sent to step 16〇4. A heater is used in the factory during the subsequent calibration test to disable the build-up heater at ===. After the method is added, the step is deleted to make the addition

(6) Including the adaptive correction circuit breaker (the towel is larger than the clear 1) ^ 2 to selectively correct the non-volatile memory of the crystal oscillator simulation! 632, semiconductor oscillator (6) 4 2: ^ above = 乍 correction circuit 1638 You can selectively make ^^636 ° based on some sampling test points. The adaptive correction circuit 1638 stores two wins during the correction period: k, or the correction one includes the base two = two lines. Now refer to the 42-43 figure from the ~~" page using a single temperature correction point Correction. Step 1640 is performed during the correction using the earlier temperature correction point. These 3 = t steps 1642 'and then proceed to step - in this step - general linear and "or non-linear temperature __ stored in the body. Just for example, you can dump the sub and can make the Lai position to determine An intercept is unknown. Alternatively, the y-intercept can be determined by age. In the industry, after the manufacture, the integrated circuit is tested at a temperature (for example, only at room temperature and/or expected ambient operating temperature). In the step of purchase, the correction circuit uses a single measurement point to locate the y-intercept of the predetermined line or other curve. The method ends in step 165. The adaptive correction circuit 1638 may allow one or more temperature values to be input. The adaptive correction circuit 1638 can selectively adapt the type of curve to be performed based on the number of sample points input. For example, when a value is input, the y-intercept of the line or curve can be determined. For each value, you can determine the y-intercept of the line or curve, and/or you can determine the curve rate, curvature, or other characteristics. When you enter three or more values, you can determine the intercept of the line or curve' and The slope, curvature or other characteristics of the curve can be determined with higher precision. 38 200828780 The adaptive correction circuit 1638 may be particularly stable. The temperature of the integrated circuit of the right-handed circuit may be required to be phased. The oscillator mode includes the crystal oscillator to simulate the warm sound of the integrated circuit. In other words, it takes several days for a steady state temperature to be radiated, and the temperature of the key state is changed to another. Change the accuracy level based on the number of sampling 自 诚 变 正 正 正 正 。 。 。 。 。 。 。 。 。 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往 往

And a single job location for test frequency 1654 ^ including 戦 temperature 1652 test temperature 1652 can be measured by temperature sensor 1636 (not shown). The 1654 can be measured by an external circuit and input to the ic basin for monitoring. Test frequency Test frequency. Since the wiper only provides a high-precision reference to the t-meter, the position of the wire or curve is automatically positioned using the single test point to automatically position the pre-ϋ 6 correction circuit 1638. As can be seen from the figure, for other reference now, refer to the figure (4), which is detailed or lower. In the figure, the correction of the correction, which is corrected by using two temperature test points, is shown. In the 44th step of the gall, then the process proceeds to the step off 4, in the ^ 的 / 狮 狮. The control start line and/or curve can optionally be stored until the temperature characteristic of the integrated body is normal, at the two temperature test points in & In step 1666, in the manufacturing «..., adjust the position of the wire or curve at the two test points, the basic characteristics. Also in the 45th figure, the slope of the straight line is shown in the graph, the graph shows the use of two test points as a function of temperature (test temperature ^724, 丨^/辜辜. Adaptive 杈正电路1638 locating the peaches Decrease or scale secret. Information from the ^^^ job solution 1674_1, 1764-2) The third temperature point of the value. For example, it is also possible to use, for example, 4 scales that have been crossed. The sigh of the coffee is always known at the rate _ rate / temperature in the 46th picture now refer to the figure 46.47, which shows the correction of _ three money multiple points 39 200828780 starting from the steps

1686 t^Z^T cl ,t „) and/or _heating!I stabilizes the temperature. In the step of the towel, adjust the position of the line or scale based on the three test points and other. The method is in the turn 169^ y Set the number and increase the 'correction circuit to perform a more accurate estimation of the position of the temperature curve and the curve of the sheep. As the number of sampling points increases, the IC cost tends to increase. In Figure 47, the graph shows As a function of temperature.

i iU .., 1794_τ) Miscellaneous and / or defined straight line or curve off 6. In this no =, the self-resolving circuit 1638 _ 戦 point positioning has a (four) recording or tree temperature test point to define a straight line or a curve. Fly / Now with reference to Figure 48A, the integrated circuit i includes a fractional phase-locked loop (4) with a nuclear offset compensation input and a reference generated by a microelectromechanical system (MEMS) resonator circuit 1732. The MEMS resonator circuit 1732 includes a MEMS resonator 1733, which is a mechanical resonance component formed in an integrated circuit. The fractional phase locked loop 1731 includes a phase frequency detector 1736 that receives a reference frequency output from a MEMS resonator circuit 1732 as described above and below. The phase frequency detector 1736 generates a differential signal based on the difference between the reference frequency generated by the MEMS resonator circuit 1732 and the VC〇 frequency. /' The differential signal is output to the charge pump 1740. The output of the charge pump 174A is input to an optional loop filter 1744. The output of the loop filter 1744 is input to a Voltage Controlled Disc (VCO) 1746 which produces a VCO output having a frequency associated with the voltage input input thereto. The output of the VCO 1746 is fed back to the scaling circuit 175A. The scaling circuit 1750 selectively divides the VCO frequency by N or N+1. Divisors of other values can be used, although the divisor N^N+1$ is used. The output of the scaling circuit 1750 is fed back to the phase frequency detector 1736. The temperature sensing ^ 1754 measures the 200828780 temperature of the integrated circuit 1730 in an area close to the 1C vibrating 1732. Temperature sensor 1754 outputs a temperature signal that is used to address correction information 1758 stored in memory 1756. The selected correction information is used to adjust the scaling circuit 175A. The selected correction information adjusts the ratio of the divisors N and N+1 used by the scaling circuit 1750. Referring now to McCaw 48B, integrated circuit 1830 includes &: fractional phase locked loop 1831 with temperature compensated input. The integrated circuit 1830 includes a MEMS resonator circuit 1832 having a microelectromechanical system (MEMS) resonator 1833. The delta-sigma fractional phase locked loop 1831 includes a phase frequency detector 1836 that receives the input of the MS resonator circuit 1832 that produces the reference rate. The phase frequency detector 1836 generates a differential signal based on the difference between the reference frequency and the VCO frequency.

The differential #唬 is output to the charge pump 1840. The output of the charge pump 184A is input to an optional loop filter 1844. The output of the loop filter 1844 is input to a voltage controlled oscillator ' (VCO) 1846 'VCO 1846 to generate a co output having a frequency that is opposite to the voltage input input thereto. The output of the vco touch is fed back to the scaling circuit 185 to squash the money or N+1. The divisor N and the day are freshly divisible to take other values. The output of the scaling circuit is fed back to the phase frequency lookup. = Degree _ Long 54 grain pro-Wei Qing's temperature. The temperature signal is output and the temperature signal is addressed to the correction information 1858 stored in the memory 1856. Γϊΐϊ 赃 赃 赃 赃 € 185 185G. The ratio of the divisors N and N+1 used by the verification circuit 185 is adjusted. The household selection correction information is used to adjust the output of the 啸 δ δ (4) output tuned correction information can be scaled to reduce the period between the closing and dividing numbers ^ Ν +1.第 ίίί, in Fig. 49, the integrated circuit 1900 includes vibrator circuits 1902. The noise circuit is fragile including · MS resonator 19 () 〇 the hall (four), he 0 electric, for example, the transmission path can include parallel leg electric resistance or its device i signal ^ _ can be used to generate the driving brain 8 The resonance of the spectral oscillator 1904 can be used to configure the semiconductor vibration and can be compensated as before. Wen Lin Ying 1 coffee can be Lin Qian integrated circuit The ^^^ 4^2 4^ material can be based on temperature _ ..., 1924 can be used to heat the integrated circuit after manufacturing 41 200828780 1900. The disabling circuit 1928 can be used to disable the heater 1924 after being utilized by the heater 1924 for calibration. For example, NV memory 1912 can be one time programmable (OTP) memory, and disable circuit 1928 can include a single breakable circuit, such as a fuse or anti-fuse. Referring now to Figure 50A, a functional block diagram of an integrated circuit 1872 including a fractional phase locked loop 1874 having a film bulk acoustic resonator (FBAR) circuit 1876 is shown. The cup number of Figure 48A is used here as appropriate. The FBAR circuit 1876 includes FBAR 1878. The FBAR 1878 may be a thin film device using bulk acoustic waves, and bulk acoustic waves propagate inside the piezoelectric material layer. FBAR changes the resonant frequency by changing the thickness of the piezoelectric material. The FBAR circuit 1876 can be used to generate a reference frequency. Compensation for the fractional phase-locked loop based on temperature is performed as described above in Figure 48A. The McCormick diagram now shows a functional block diagram comprising an integrated circuit 1880 having a film bulk acoustic resonator (FBAR) circuit 18 = & [fractional phase locked loop 1882]. The 48A ® and 48B _ labels are used here as appropriate. The FBAR circuit 1876 includes a male slave. The fbar circuit I876 can be used to generate a reference frequency. Compensation for the delta-sigma fractional phase locked loop 1882 based on temperature is performed as described above in the first item. Referring now to Figure 28, an exemplary FBAR circuit is% and pBAR 1878 (? FBAR power = 1876 may include an acoustic mirror with FBAR 1878 _ (ae. on mirr〇r) 2 for providing structure and substrate Acoustic isolation between jobs. fbar (4) may include an electrical or other piezoelectric material such as two ZnO, PZT. fbar 1878 may also be used with 1890. Acoustic mirror 1892 may include a fine charge between electrode 1890 * substrate 1898 The spectral frequency of the layer 1894 and the low acoustic impedance layer 1896〇F1878 can be 1898^ Other FBAR junctions ^ show the exemplary Guanxin structure only for the purposeless, but it is also conceivable dream test: ^ according to the prior art (five) The semiconductor oscillator circuit 2010 includes a power circuit 2018 that communicates with the AC-coupled transistor 2016 to bias the cross-connected transistor. The cross-over power: 2018, the second circuit, 2014, reads the vibration to generate the vibration output. Signal V°ut. Current biased private circuit 2〇18 k for driving and re-lighting the signal of the crystal nano. The test chart shows the amplitude drift as a function of time. Over time, package 42 200828780 includes LC Semiconductor oscillation of the energy storage circuit The fine envelope of the circuit 'for example, the amplitude envelope is increased (the other circuit that does not indicate direction, the tuned shift vout causes problems. The frequency drift can also be handled by the above method. "Connect M, 2020 〇 2 〇 2° ϋΐ = integer mode, group 2021 and semiconductor 敕 module with amplitude adjustment input 2 〇 2α Γ , 2 〇 2 〇 J to include any of the semiconductor oscillators described herein. Amplitude modulation (four) / semiconductor oscillator The amplitude of the rounding of the 2022 is monitored. The monitored signal output to the output of the semiconductor oscillator is input to the monitored signal by the monitored voltage 2021. The alarm amplitude can be set to an undetermined threshold.

Here she adjusts the control signal. Control the serial number, I include the signal,

Two flat fields, changed impedance values and/or any other control signals. As a result, amplitude drift can be prevented or prevented. U Referring now to Figure 53, an exemplary semiconductor oscillator chest is shown. The semiconductor resonator =020 includes a resonant circuit 2〇23 and an adjustable biasing module 2〇24. The amplitude adjustment lion moves a pair of 〇 ^ 路 2023 V 〇 ut or other parameters to monitor, and generates a control signal to adjust the adjustable offset module 4 smart. The output of the adjustable bias module 2024 changes the operation of the resonant circuit period to adjust the amplitude of the semiconductor oscillator 2022. Referring now to Figure 53B, a semiconductor oscillator circuit 2020 in accordance with the present disclosure is shown. The half & body vibration circuit 2020 performs amplitude correction and includes an LC tank circuit 2025 and a cross-link transistor 2026. The semiconductor oscillator circuit 2020 includes an amplitude adjustment module 2021. The semiconductor oscillator circuit 2020 includes an adjustable current source 2024-1 that provides a current bias signal to the parent and light transistor 2026. The amplitude adjustment module 2021 monitors ~(10) and selectively adjusts the control signals. The control signal adjusts the bias signal output by the adjustable current source 20244. In this way, the amplitude envelope of V〇ut is adjusted in turn. The amplitude adjustment module 2034 can sense the amplitude envelope of VQUt and compare the amplitude envelope to the threshold number Vth. Based on the difference between the compared signals, the amplitude adjustment module can adjust the amplitude of V^t by adjusting the control signal to the adjustable current source 2024-1. Referring now to Figures 54-56, there is shown a circuit schematic of an exemplary semiconductor oscillator circuit in accordance with the present disclosure. In Fig. 54, the semiconductor oscillator circuit includes an inductor L, a capacitor C, a first 43 200828780 and a second transistor T1 and Τ2, an adjustable amplitude module 2〇2, a forked face transistor 2026, which are shown For the connection. 1 positive_source 2024-1 and intersection In Fig. 55, an alternative arrangement of the LC fault circuit is shown. Capacitor C is placed in parallel with the Τ2 terminal. Inductors L1 and L2 are set and communicate with voltage source vdd, respectively, with === and ^ of transistors T1 and T2. The first and second capacitors C1^r are in turn and in use, the voltage source Vdd supplies a voltage to the LC circuit, which causes the L-hexa-coupled transistor to be based on the amplitude envelope of the bias signal L.

«, and the inclusion of fine-envelope fine-value envelopes. The vibrating thief group can be sewn. ΪΪίΪ=Based on the score axis, it can be adjusted to Qian Lai (four). The control letter ^ now refers to Fig. 57' showing the charm of the cast body with temperature and amplitude compensation. The temperature and amplitude compensation can be combined and combined into a single crystal oscillator simulator. The rod oscillator is used for amplitude compensation and temperature compensation, which improves the accuracy of the resolution and amplitude. , , . When the semiconductor oscillator implemented by the above crystal oscillator simulator includes one or more senses, it is preferable to include a material having low electron mobility characteristics. For example, the material may include copper (Cu) or gold (Au) e pure (10) materials tending to electron migration transients. In other words, Cu and bismuth have relatively low electron mobility compared to A1. The low electron mobility of cu and Au tends to reduce the frequency drift as a function of time. In systems that use an external crystal oscillator to generate the reference frequency, it is also possible to use Μ to achieve the inductance ^ in these systems for the material used in the in-service device _« and the use of external crystals to generate reference frequency A crystal oscillator simulator system such as the one described above is not important. In other words, the external crystal oscillator in these systems corrects for frequency drift due to migration. - A number of embodiments of the invention have been described. However, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. Therefore, other realities are also within the scope of the royal rights. 44 200828780 [Simple diagram of the diagram] $1 shows a block diagram of one aspect of the crystal oscillator simulator; Figure 2 shows a table of the relationship between temperature and correction factor; Figure 3 shows the relationship between temperature and correction factor Figure; $4 shows a block diagram of one aspect of the crystal oscillator simulator; = two-dimensional view of the crystal oscillator simulator connected to the external hybrid; ΐ 7Α ϋ_ external impedance crystal enchant simulator A detailed block diagram of the aspect; Figure 7 and Figure 7B are diagrams showing the relationship between the external impedance value and the digit value; the graph is an aspect of the oscillator component for generating an output having a periodic waveform. Box = 9 is a block diagram of one aspect of the spread spectrum generator; 10 is a flow chart for the operation of the analog crystal oscillator; Figure 11 is a block diagram of an aspect of the low power resonator; The 12-picture is a block diagram of another aspect of the low-power oscillator; the circuit and the function block of the integrated circuit of the 曰曰 振 — — 产生 产生 产生 贼Figure; running 嶋 4 office dough mixer simulation mm package 々 t processing And a functional block diagram of an integrated circuit for generating a clock signal for the processor and using a crystal button simulator for setting up the 222 implant; for: a functional block diagram of the integrated circuit The integrated circuit includes one or more circuits, a day of the device, a clock-pulse of the clock signal that generates one or more other clock frequencies, and a function of the t-integrated circuit. Block diagram 'The integrated circuit includes a processor, one or more oils, two ττ: simulators, and a clock divider that generates clock signals of other clock frequencies; a functional block diagram of the crying two-two-bulk circuit The integrated circuit includes a processor, a graphics processing i or a circuit, a note, and a crystal oscillator 11 simulator that generates clock money; to the domain 11 and the 11th low pass (10)_electric_function box Figure; ^ ; 20 Figure is a functional block diagram of the integrated circuit of the semiconductor circuit in accordance with the financial technology packaged in the package circuit of the package material towel, the half 45 200828780 _包(四)彻_啸积赵=1' side = is the side of the package (four) __ for the side of the package, 25 _ more detailed _ Μ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Function - f31D is the functional block diagram of the vehicle control system; 31E is the functional diagram of the mobile phone; 31F is the functional block diagram of the set-top box; ^ 31G system, the function box for the media player Figure </ br> _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A replacement integrated circuit package of a conductive material layer _ cross-sectional view; a side cross-sectional view of a circuit of an adjacent annealed glass and/or an epoxy resin layer and a conductive material layer; 'Figure 33 is included with stone A side cross-sectional view of a replacement integrated circuit package of an adjacent annealed glass poly and conductive material layer of a vibrator of a wafer; a sample of the Moone layer and the f 33C pattern including annealed conduction adjacent to the inductor of the tantalum wafer Side cross-sectional view of a replacement integrated circuit package of material layers; The tree layer and the layer are included in the (4) piece of the oscillator circuit or the inductor layer or the solution layer (four) layer _ frequency conversion circuit ^ glass water and / / 34A-34D diagrams including the generation of air between the map, Side cross-sectional view of the replacement integrated circuit package of glass or enamel layer f-glass and/or resin part and glass 36A-36C ® series include multiple integrated circuit seals: package is produced 仏 隙 隙 隙And Fig. 38 shows an exemplary step of the method for fabricating the product of Fig. 32A-32D, Fig. 39, which is a crystal oscillator simulator integrated circuit. The bottom view shows the flow of the step number in the frequency of the manufacturing of the fine coffee simulator. Fig. 42 shows a flow chart showing the steps of the function of the temperature as a function of temperature ^ month = line using a single temperature measurement Fig. 43; A diagram of the position of the line; a straight line or other curve f 44 with the previous temperature test point is shown in the flow chart using two temperature Wei points to correct the brother 45 diagram showing the frequency as a function of temperature and the step of 彻, =仃; position and / or resolution of the figure. ^ degree test point of the line or curve of the 46th picture show fine (four) (four) coffee object rotten axis step flow 47 200828780 process chart; figure 47 shows as a function of temperature Frequency and curve using three or more wide txo / «, - temperature test points

Energy Block Diagram; Figure 48B is a functional block diagram of a δ_Ε phase-locked loop including a MEMS resonator circuit; Figure 49 is a functional block diagram of an exemplary MEMS resonator circuit with temperature compensation; Block Diagram; 50thΑ ® The function of the fractional phase-locked loop including the FBAR circuit is a functional block diagram of a δ_Σ phase-locked loop including the FBAR resonator circuit; and FIG. 50C shows an exemplary FBAR circuit and FBAR; 51A is a functional block diagram of a semiconductor LC oscillator according to the prior art; the amplitude shift of the semiconductor 51B is not a function of time; the energy block diagram; the 52nd, 53A, and 53B are according to the present disclosure. Figure 54-56 of an exemplary semiconductor oscillator is a circuit schematic of an exemplary semiconductor LC oscillator in accordance with the present disclosure; and Figure 57 is a functional block diagram of a semiconductor oscillator with temperature and amplitude compensation. Like reference numerals indicate like elements in the drawings. [Major component symbol description] 10, 40, 100, 120, 202, 302, 322, 352, 502, 1630 crystal oscillator simulator 12 output signals 14, 44, 1554, 1634, 1910 semiconductor oscillator 16 control input 18, 1632, 1912 non-volatile memory 20, 50, 858, 1758, 1858 correction information 22, 52, 854, 1636, 1754, 1854, 1920 temperature sensor 30 storage mode 32 example Figure 54, 1924 heater 48 200828780 56 control The device 58 selects the input 102, 104, 122 select pin 106, 108, 124 external impedance 126 measurement circuit 127 storage circuit 128 digital value determiner 130 address generator 132 controller 150 impedance value group

152 digital output value set 154, 158 select value 156 impedance value range 200 oscillator component 204 drive phase locked loop (PLL) 206, 208 multi-function select pin 210, 212 external resistor 214 decoder 300 spread frequency oscillator 320 low Power oscillator 324 active 矽 oscillator 326 adder 328 controller 330 digital analog converter (DAC) 332 rectifier 334 control signal 350 low power oscillator 354 charge pump oscillator 356, 840, 1740, 1840 charge pump 358, 1744, 1844 loop filter 360, 846, 1746, 1846 voltage controlled oscillator (VCO) 49 200828780 362 phase detector 364 multiplexer 366 phase locked loop 400, 402, 404, 406, 408, 412, 414 block 500, 518, 600, 700, 710, 724, 830, 860, 1730, 1830, 1880, 1900 integrated circuit 504, 544 circuit 506 external component 520 clock divider 512, 530, 610 processor

522-1 ~ 522-N Circuit 532-1 ~ 532-N Circuit 540 Graphics Processor 542, 856, 1009, 1019, 1028, 1066, 1094, 1114, 1047, 1756, 1856 Memory 602-1 ~ 602-N Circuit 7〇4, 714, 736 Package Material 711 Chip Semiconductor Oscillator 718 Integrated Circuit Package 728 Shim 732 Lead 733 Lead Frame 734 Bond Line 738 Replace Integrated Circuit Package 740 Integrated Circuit Substrate 741 Wafer Temperature Compensated Semiconductor Oscillator 742 Inductor 744 glass layer 746 cavity 750 epoxy material layer 752 air cavity 50 200828780 760 package material 831, 1731, 1874 fractional phase-locked loop 832 integrated circuit oscillator 836 phase frequency detector 844 loop filter 850, 1750, 1850 scaling circuit 858, 1831, 1882 δ-Σ fractional phase-locked loop 870, 1870 Σ_δ modulator 900 flowchart

902, 904, 906, 908 Step 920 Flowchart 922, 924, 926, 928 Step 1000 Hard Disk Drive 1002, 1012, 1022 Signal Processing Circuit and/or Control Circuit 1006 Magnetic Storage Media 1008 Wireless Communication Connection 1010 Digital Multifunction Optical Disc (DVD) Drive 1016 Optical Storage Media 1017 Wireless Communication Connections 1018, 1027, 1046, 1064, 1090, 1110 Large Capacity Data Storage Device 1020 High Definition Television (HDTV) 1026 Display 1029, 1048, 1068, 1096, 1116 WLAN Network interface 1030 vehicle 1032 transmission control system 1040 control system 1042 input sensor 1044 output device 1050 mobile telephone 1051 communication antenna 1052, 1084, 1104 signal processing circuit and / or control circuit 51 200828780 1056 microphone 1058 audio output 1060, 1088, 1107 Display 1062 input device 1080 on-board 1100 media player 1108 user input 1109 audio output 1204, 1304, 1404 矽 wafer 1206, 1306 annealed glass layer

1208, 1308 mold material 1200, 1210, 1240, 1250, 1260, 1270 replace integrated circuit package 1212 conductive material layer or coating 1220, 1230, 1300, 1330, 1340, 1360, 1380, 1390, 1400, 1450 integrated circuit Package 1242 circuit components 1252, 1320 oscillator 1262, 1274 inductor 1272 oscillator circuit 1322 circuit 1324, 1384 air gap 1342 epoxy material portion 1382 glass or germanium portion 1410A, 1410B a plurality of spaced apart AGP and / or epoxy materials Portion 1310, 1408 glass or tantalum layer 1410 annealed glass paste/epoxy material portion 1414 dashed line tangent 1420 spacer 14144, 1414-2, 1414-3 at 1454 container 1456, 1456' conductive material layer 52 200828780 1460 gasket 1462 cutting line 1500 Method 1502, 1506, 1508, 1510, 1520 Step 1550 Crystal Oscillator Simulator Integrated Circuit (IC) 1552 Non-volatile Memory 1554 Semiconductor Oscillator 1556 Temperature Sensor 1558 Heater 1560, 1928 Disabling Circuit

1600, 1602, 1604, 1606, 1608, 1610, 1624, 1640, 1642, 1644, 1646, 1648, 1650 Step 1638 Adaptive Correction Circuit 1652 Test Temperature 1654 Test Frequency 1656 Single Test Point Automatically Positioning a Predetermined Line or Curve 1657 High single test point automatically positioned straight line or curve 1658 lower single test point automatically positioned straight line or curve 1660, 1662, 1664, 1666, 1668 Step 1676 Two test points (test temperature 1672 small 1672-2 and test frequency 1674-1, 1764-2) Positioning and/or defining straight lines or curves 1680, 1682, 1684, 1686, 1688, 1690 Step 1696 Three or more test points (test temperature ^924, 1692_2, ..., 1692 _ Ding and test frequency 1694-1, 1694-2, ..., 1794-T) Positioning and / or defining a straight line or curve Π 32, 1832, 1902 microelectromechanical system (MEMS) resonator circuit 1733, 1833, 1904 MEMS resonator 1736 1836 phase frequency detector 1876 film bulk acoustic resonator (FBAR) circuit 1878 film bulk acoustic resonator 53 200828780 1892 acoustic mirror 1898 substrate 1888, 1890 electrode 1894 high acoustic impedance layer 1896 low acoustic impedance layer 2010 semiconductor oscillation Circuit 2014 LC tank circuit 2016 cross-coupled transistor 2017 bias 2018 current bias circuit

2020 semiconductor oscillator 2021 with amplitude compensation amplitude adjustment module 2022 semiconductor oscillator 2023 with amplitude adjustment input resonant circuit 2024 adjustable bias module 2025 LC energy storage circuit 2024-1 adjustable current source 2026 cross-coupled transistor 2034 Amplitude adjustment module 54

Claims (1)

200828780 X. Patent application scope: 1 · A crystal oscillator simulator integrated circuit, including: - the first temperature wire should be n, the thief touches the integrated circuit one count and based on the first temperature; (four) number One =; the amplitude is compared, and based on the 2 2 · The crystal according to the 2nd article of the application of the 2nd singer 2, the test of the money, the Wei Zhen rhyme test ΐ ϊ ϊ 4 _ circuit, ... 嶋 fine fine, wherein the 6 ϋΐ ϊ ϊ 之 之 晶体 , , , , , , , , , , , , , , , , , 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体 晶体Lc circuit communication. The 7-item crystal oscillator simulation _ body circuit, the function included in the step-by-step. '^ 轮 轮 轮 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县The crystal oscillator simulator integrated circuit of the eighth aspect of the present invention, wherein the 55 200828780 heater operates in response to the first temperature sensor. 10. The crystal oscillator simulator integrated circuit of claim 1, wherein the semiconductor oscillator comprises an inductor-capacitor (LC) oscillator, a resistor-capacitor (RC) oscillator, and a ring oscillator. Selected from the group consisting of. The crystal oscillator simulator integrated circuit of claim 1, wherein the semiconductor oscillator comprises an inductor comprising one of gold or copper. 56