TW200828640A - Pixel structure and organic electroluminescent device - Google Patents

Abstract

A pixel structure. The pixel structure includes a substrate comprising a thin film transistor, a protective layer overlying the substrate, a first electrode formed on the protective layer and comprising a first sub-electrode electrically connected to the thin film transistor and a second sub-electrode, an insulation layer overlying a portion of the first electrode, a first emitting zone defined by the exposed first sub-electrode of the first electrode, a second emitting zone defined by the exposed second sub-electrode of the first electrode, a pillar around the first emitting zone, a first organic light emitting layer overlying the first sub-electrode of the first electrode, a second organic light emitting layer overlying the second sub-electrode of the first electrode, and a second electrode comprising a first sub-electrode and a second sub-electrode formed on the first and second organic light emitting layer, respectively, the first sub-electrode of the second electrode electrically connected to the second sub-electrode of the first electrode to form a series contact area.

Description

200828640 IX. Description of the Invention: [Technical Field] The present invention relates to a tandem type light-emitting element structure, and more particularly to a halogen structure and an organic electroluminescent element. [Previous technology #ί] At present, the full-color display of the active organic electroluminescent diode (OLED) panel is composed of RGB sub-pixels, and each element is connected by a group of thin-film transistor circuits. The excitation light diode element is constructed. Since the organic electroluminescent diode is a current-driven thin film component, the conventional active driving architecture has disadvantages such as high energy consumption, high particle sensitivity, multiple dark spots, or unsuitable for amorphous germanium film. Transistor back plate, etc. To solve the aforementioned problems, for example, the panel sub-tenon structure utilizes an active drive circuit (at least 2T1C) architecture to drive two or more series-connected electromechanical excitation photodiodes. However, the conventional use of a shadow mask to fabricate a tandem organic electroluminescent diode is only suitable for large-sized illumination applications and is not suitable for making micro-small components on a panel. In addition, conventional techniques use a larger size organic electroluminescent diode or module in series for use as an illumination source or text display application. The present invention comprises: a substrate comprising a thin film transistor; a protective layer overlying the substrate; a first electrode formed on the protective layer, the first electrode comprising a First electrode and second time

Client, s Docket No.: AU0508037 TTr s Docket No: 0632-A50713TW/final/david 5 200828640 pole, wherein the first electrode of the first electrode is electrically connected to the thin film transistor; an insulating layer covering a first region of the first electrode, the first electrode and the second electrode are respectively defined as a first light-emitting region and a second light-emitting region; a pillar is disposed on the insulating layer, Surrounding the first light emitting region; a first organic light emitting layer covering the first electrode of the first electrode; a second organic light emitting layer covering the second electrode of the first electrode; and a first The second electrode includes a first electrode and a second electrode. The first electrode of the second electrode is formed on the first organic light emitting layer and electrically connected to the second electrode of the first electrode. f is formed to form a series contact region, and a second electrode of the second electrode is formed on the second organic light-emitting layer. The halogen structure of the present invention comprises: a substrate comprising a thin film transistor; a protective layer covering the substrate; a first electrode formed on the protective layer comprising N (N2 2) secondary electrodes, wherein a first electrode of the first electrode is electrically connected to the thin film transistor; an insulating layer covers a partial region of the first electrode, and the N sub-electrodes exposed by the first electrode are respectively defined as a first a light-emitting region to an N-th light-emitting region; at least one pillar disposed on the insulating layer, respectively surrounding the first light-emitting region 1 to the first N-1 light-emitting region; an organic light-emitting layer covering On the light-emitting regions of the first electrode; and a second electrode comprising N (N2 2)th electrodes disposed on the organic light-emitting layer and respectively corresponding to the N sub-electrodes of the first electrode, The first to Nth primary electrodes of the second electrode are electrically connected to the first electrode of the adjacent light emitting region and form at least one series contact region. The organic electroluminescent device of the present invention comprises: a substrate; a plurality of first halogens, a plurality of second halogens and a plurality of third halogens, disposed on the base

Client/s Docket No.: AU0508037 TTfs Docket No: 0632-A50713TW/final/david 6 200828640 On the board, each of the first guerrillas _ * is divided into 'su-links, and the tower is checked. - inter-system electrical string, .^ 0a and between the first first element, the second element and the third book, a column between the two elements, the second book The poles are formed on the first element of the flute, and the electrodes are located in the first one - the crater-electrode system is electrically connected to each other by the gap. ",,,,,,,,,,,,,,,, Embodiments of the present invention provide a t-structure n: a first electrode, an - insulating layer, at least a column, an organic;; f; with an electrode. The substrate comprises a thin film electro-crystal: = first; the electrode is formed on the protective layer, and comprises: = ί connected to the fly electrode - the first: the large electrode is electrically connected to the thin film transistor, and the insulating layer is covered by the first electrode The secondary electrodes are respectively defined as a -first light-emitting region ^ surrounding the second hair-first region; the pillars are disposed on the insulating layer, and respectively, the second light-emitting region to the first light-emitting region; the organic light-emitting layer 2 is at the first electrode The second electrode comprises N _ = human electrodes, and is disposed on the organic luminescent layer and respectively corresponding to the solid electrode of the first electrode, wherein the first electrode to the second electrode of the second electrode Optionally, electrically connecting to the first electrode of the adjacent light-emitting region and forming at least one series contact region (for example, the first electrode of the second electrode is electrically connected to the first electrode of the first electrode to form a series contact region) .

Client's Docket No: AU0508037 TT^s Docket No: 〇 632-A50713TW/final/david 7 200828640 Please refer to Figures 1 and 2A and 2B for a description of the N=2 of the present invention in a sectional view and a top view, respectively. Prime structure. Please refer to Figure 1, a schematic cross-sectional view of the pixel structure. The halogen structure 10 includes a substrate 30 including a thin film transistor 20, a protective layer 40, a first electrode 70 including a first secondary electrode 50 and a second secondary electrode 60, an insulating layer 80, and a columnar shape. The first organic light emitting layer 100, the second organic light emitting layer 110, and the second electrode 140 including a first secondary electrode 120 and a second secondary electrode 130. The first electrode 50 and the second electrode 60 of the first electrode 70 are not connected to each other. The protective layer 40 is disposed on the substrate 30. The first electrode 70 is formed on the protective layer 40, the insulating layer 80 covers a portion of the first electrode 70, and the pillar 90 is disposed on the insulating layer 80. The first organic light emitting layer 100 covers the first electrode 50 of the first electrode 70, the second organic light emitting layer 110 covers the second electrode 60 of the first electrode 70, and the first electrode 120 of the second electrode 140 is formed by the first organic electrode The second sub-electrode 130 of the second electrode 140 is formed on the light-emitting layer 100 and on the second organic light-emitting layer 110. In the structure, the first electrode 50 of the first electrode 70 is electrically connected to the source/drain 150 of the thin film transistor 20. In the first electrode 70, the first sub-electrode 50 not covered by the insulating layer 80 is defined as a first illuminating region 170, and the second sub-electrode 60 not covered by the insulating layer 80 is defined as a second illuminating region 180, and two The illuminating regions together form a pixel unit. The pillars 90 surround the first illuminating zone 170. The first sub-electrode 120 of the second electrode 140 is electrically connected to the second sub-electrode 60 of the first electrode 70 to form a series contact region 190. The series contact region 190 is located between the first light emitting region 170 and the second light emitting region 180 and is located within the projected region of the pillars 90.

Client's Docket No.: AU0508037 TTf s Docket No: 0632-A50713TW/final/david 8 200828640 The thin film transistor 20 is, for example, an amorphours silicone or a poly-crsystalline silicone thin film transistor. The protective layer 40 may be composed of an inorganic material or an organic material. The first electrode 70 may be composed of indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide (AZ0). The insulating layer 80 may be composed of tantalum oxide, tantalum nitride, hafnium oxynitride or photoresist. The first illuminating region Π〇 is substantially equal in area to the second illuminating region 180, and typically has a total area of less than about 1 cm 2 . The pillars 90 can be, for example, an inverted trapezoid having a width and a width, and a projection area having a width of substantially 3 to 10 μm. The second electrode 140 may be made of, for example, aluminum metal, and the second electrodes 130 are electrically connected to each other to form a common electrode. The first sub-electrode 50 of the first electrode 70, the first organic light-emitting layer 1A, and the first electrode 120 of the second electrode 140 constitute a first bottom-emission element. The second sub-electrode 60 of the first electrode 70, the second organic light-emitting layer 110, and the second electrode 140 of the second electrode 140 constitute a second bottom-emission element. If the materials of the first electrode 70 and the second electrode 140 are appropriately changed, the top-emission element 0 can be configured. Please refer to FIGS. 2A and 2B. FIG. 2A is a diagram shown in FIG. In the prime structure, the first organic light-emitting layer 100, the second organic light-emitting layer 11A, and the second electrode 140 have not yet been formed in a front view, and the second layer BB is a cross-sectional view taken along line 2B-2B of FIG. 2A. As described above, the first illuminating region 170 defined by the first sub-electrode 50 not covered by the insulating layer 80 in the first electrode 70 and the second illuminating region defined by the second sub-electrode 60 not covered by the insulating layer 80 are defined. 180 together constitute a pixel unit 200, and the pillar 90 surrounds the first light-emitting area 170. In the figure 2A, it is located in the first light-emitting area no

Client/s Docket No. : AU0508037 TTf s Docket No: 0632-A50713TW/final/david 9 200828640 Between the second light-emitting region 180, the second electrode region 210 adjacent to the pillar 90 serves as a subsequent second electrode A series contact region 190 between the first electrode and the second electrode 60 of the first electrode 70. Thus, as is more clearly seen in Fig. 1, the subsequently formed series contact region 190 is located between the first illuminating region 170 and the second illuminating region 180 and within the projected area of the pillar 90. Figure 1 is an embodiment of a bottom-emission element. If the first electrode is changed to an opaque material, such as |Lu metal, the second electrode is changed to a light-transmitting material such as indium tin oxide (indium). Tin oxide, ITO), indium zinc oxide (IZO) or aluminum zinc oxide (AZO), etc., the organic light-emitting layer material can be adjusted to make the upper light (top) -emission) Element, which has the advantage of a large aperture ratio. The present invention can be further extended by dividing the first electrode in the panel sub-tenk structure into N (N 2 2) aliquots, and then covering the first electrode or its edge with an insulating layer on the insulating layer. And forming a pillar so that the subsequently formed second electrode ' can be separated by the same, and is electrically connected to the first electrode under the pillar' to form a tiny tandem organic electroluminescent element as a panel (sub) vegan. SUMMARY OF THE INVENTION The object of the present invention is to fabricate a tiny size tandem organic electroluminescent diode (OLED) on a thin film transistor backplate for use in a secondary organic electroluminescent diode panel. Since the organic electroluminescent diode in the panel sub-pixel structure is composed of two or more (N 2 2) series organic electroluminescent diodes, the required driving current can be reduced to the original one. One-ninth, the invention has the advantages of reducing the energy consumption of the thin film transistor, reducing the dark spot, improving the production yield, and being more suitable than the prior art.

Clients Docket No. :AU0508037 TTfs Docket No: 0632-A50713TW/final/david 10 200828640 It is used in amorphous Aussie thin film transistor, which is advantageous for large-size panel production, and can extend organic electricity due to small panel temperature rise. The operating life of the excitation light diode. Referring to Figures 3 and 4A and 4B, another pixel structure of the present invention when N = 2 will be described in a cross-sectional view and a top view, respectively. Please refer to Fig. 3 for a schematic cross-sectional view of the halogen structure 1 〇 '. The halogen structure 10' includes a substrate 30 having a bus line 220, a first electrode 70 including a first secondary electrode 50 and a second secondary electrode 60, an insulating layer 80, and a pillar. 90, an organic light-emitting layer 1〇〇, and a second electrode 140. The first electrode 50 and the second electrode 60 of the first electrode 70 are not connected to each other. The insulating layer 80 covers a partial region of the first electrode 70, and the pillars 905 are placed on the insulating layer 80, and the 'organic light-emitting layer 10 0' covers the first electrode 50 of the first electrode 70, and The second electrode 140 is formed on the organic light emitting layer 100'. In the structure, the second electrode 60 of the first electrode 70 is electrically connected to the metal line 220 to reduce its resistance. In the first electrode 70, the first sub-electrode 50 not covered by the insulating layer I 80 is defined as a light-emitting region 170. The pillars 90 surround the light-emitting area 170'. The second electrode 140 is electrically connected to the second electrode 60 of the first electrode 70 to form a series contact region 190. The series contact region 190 is located at the periphery of the light-emitting region 170' and is located within the projected region of the pillars 90. The metal line 220 is located on the outer side of the light-emitting area 170. The first electrode 70 may be composed of indium tin oxide (ITO), indium zinc oxide (IZ0) or aluminum zinc oxide (AZO). The insulating layer 80 may be composed of tantalum oxide, tantalum nitride, hafnium oxynitride or photoresist. The pillar 90 is, for example

Client, s Docket No: AU0508037 TTfs Docket No: 0632-A50713TW/final/david 11 200828640 A wide inverted narrow trapezoid with a width of approximately 3 to 10 microns. The second electrode 140' may be composed of aluminum metal. The metal line 220 can be simultaneously formed when the gate metal layer of the thin film transistor is formed to transmit a signal to drive the pixel circuit. Please refer to FIGS. 4A and 4B . FIG. 4A is a top view of the organic light-emitting layer 100 ′ and the second electrode 140 in the halogen structure shown in FIG. 3 , and FIG. 4B is the fourth view. A schematic cross-sectional view taken along line 4B-4B. As described above, the pillars 90 surround the light-emitting region 170'. In Fig. 4A, located at the periphery of the light-emitting region 170', the second electrode region 210 adjacent to the pillar 90 serves as a series contact region between the subsequent second electrode and the second electrode 60 of the first electrode 70. Thus, it can be more clearly seen that the subsequently formed series contact regions are located on the periphery of the light-emitting region 170', in the projected region of the pillars 90, and are electrically connected to the metal wires 220. Figure 3 is an embodiment of a bottom-emission element. If the first electrode is changed to an opaque material such as aluminum metal, the second electrode is changed to a light-transmitting material such as indium tin. Oxide, ITO), indium zinc oxide (IZO) or aluminum zinc oxide (AZO), etc., if the organic light-emitting layer material is properly adjusted, the upper light can be produced (top- Elevation element has the advantage of a large aperture ratio. Referring to Figure 5, an organic electroluminescent device of the present invention will be described in a top view. The organic electroluminescent device comprises: a substrate 1; a plurality of first halogens 2, a plurality of second halogens 3 and a plurality of third halogens 4, disposed on the substrate 1, wherein each of the first pixels 2 The second pixel 3 and the third pixel 4 are respectively divided into N sub-halogens 6 and N sub-halogens by column 5

Clientf s Docket No.: AU0508037 TTf s Docket No: 0632-A50713TW/final/david 12 200828640 This is electrically connected in series, and the column between the first halogen 2, the second halogen 3 and the third halogen 4 A gap 7 is formed between 5; and a second electrode 8 is formed on the first halogen 2, the second halogen 3 and the third halogen 4, wherein the second electrode on the Nth secondary halogen 6 8 are electrically connected to each other by the gaps 7. The first pixel 2 is a red pixel, the second pixel 3 is a green pixel, and the third element 4 is a blue element. The gap 7 between the first halogen 2, the pillars 5 between the second halogen 3 and the third halogen 4 is substantially between 1 micrometer and 50 micrometers. The second electrode 8 on the Nth sub-pixel 6 is a common electrode. Although the present invention has been disclosed in the preferred embodiments as above, it is not intended to limit the invention, and anyone skilled in the art, The scope of protection of the present invention is defined by the scope of the appended claims, unless otherwise claimed.

Client's Docket No: AU0508037 13 TTA s Docket No: 0632-A50713TW/final/david 200828640 [Simplified Schematic] FIG. 1 is a schematic cross-sectional view showing an embodiment of the pixel structure of the present invention. Fig. 2A is a top view of an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along line 2A_2B_2B. Figure 3 is a schematic cross-sectional view showing another embodiment of the halogen structure of the present invention. Fig. 4A is a top view of another embodiment of the halogen structure of the present invention. Figure 4B is a schematic cross-sectional view taken along line 4B-4B of Figure 4A. Fig. 5 is a top view showing an embodiment of the organic electroluminescent device of the present invention. ([Main component symbol description] 2b~2B, 3, 4A~4BFig. 10, 10'~ 昼 结构 structure; 20~ thin film transistor; 30~ substrate; 40~ protective layer; 50, 120~ first time Electrode; 60, 130, 210~ second electrode; 70~ first electrode; 80~ insulating layer; 90~ pillar; 100~ first organic light emitting layer; 110~ second organic light emitting layer; Light-emitting layer; 140, 140'~ second electrode; 150~ source/no-polar; 160~ first electrode of the first electrode is electrically connected with the thin film transistor; 170~first light-emitting area; 180~second light District; 170' ~ illuminating region; 190 ~ tandem contact region; 200 ~ halogen unit; 220 ~ metal wire. Figure 1 ~ substrate; 2 ~ first halogen; 3 ~ second halogen; 4 ~ third halogen ; 5 ~ column; 6 ~ 昼 昼; 7 ~ gap; 8 ~ second electrode.

Client’s Docket No.: AU0508037 TTfs Docket No: 〇632-A50713TW/final/david

Claims (1)

200828640 X. Patent application scope: 1. A halogen structure comprising: a substrate comprising a thin film transistor; a protective layer covering the substrate; a first electrode formed on the protective layer, the first An electrode includes a first electrode and a second electrode, wherein a first electrode of the first electrode is electrically connected to the thin film transistor; an insulating layer covers a partial region of the first electrode, The first electrode and the second electrode exposed by the first electrode are respectively defined as a first hair (light region and a second light emitting region; a pillar) disposed on the insulating layer to surround the first a light emitting region; a first organic light emitting layer covering the first electrode of the first electrode; a second organic light emitting layer covering the second electrode of the first electrode; and a second electrode including a first electrode and a second electrode, wherein the first electrode of the second electrode is formed on the first organic light-emitting layer, and is electrically connected to the second electrode of the first electrode to form a first electrode Series contact area, The second electrode of the second electrode is formed on the second organic light-emitting layer. 2. The halogen structure according to claim 1, wherein the series contact region is located in the first and second light-emitting regions. 3. The halogen structure according to claim 1, wherein the series contact region is located outside the first and second light-emitting regions. 4. As described in claim 3 The prime structure further includes a Client's Docket No.: AU0508037 TTfs Docket No: 0632-A50713TW/final/david 15 200828640 A bus line, the second electrode of the first electrode is electrically connected to the metal line. 5. The halogen structure as described in claim 4, wherein the metal wire is located on the outer side of the first and second light-emitting regions. 6. The halogen structure according to claim 1, wherein The tandem contact region is located in the projection area of the pillar. 7. The halogen structure according to claim 6, wherein the width of the projection region is substantially between 3 and 10 micrometers. The unitary structure described in the scope of item 1, Wherein the first electrode of the first electrode, the first electrode of the first organic light-emitting layer and the first electrode of the second electrode constitute a first light-emitting element, the second electrode of the first electrode, and the second organic light-emitting The layer and the second electrode of the second electrode constitute a second light-emitting element, and the light-emitting elements are bottom-emission elements. 9. The halogen structure according to claim 8 of the patent application, wherein The first electrode comprises indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum zinc oxide (ΑΖΟ) 〇10. The halogen structure described in the item, wherein the second electrode comprises aluminum metal. 11. The halogen structure according to claim 1, wherein the first electrode of the first electrode, the first organic light-emitting layer and the first electrode of the second electrode constitute a first light-emitting element, The second electrode of the first electrode, the second organic light-emitting layer and the second electrode of the second electrode constitute a second light-emitting element, and the light-emitting elements are top-emission elements. Client's Docket No.: AU0508037 TTf s Docket No: 0632-A50713TW/final/david 16 200828640 12. The pixel structure of claim 11, wherein the first electrode comprises aluminum metal. 13. The halogen structure according to claim 11, wherein the second electrode comprises indium tin oxide (ITO), indium zinc oxide (IZO) or zinc oxide (aluminium zinc oxide, AZO) o 14. The halogen structure as described in claim 1, wherein the insulating layer is composed of yttrium oxide, lanthanum nitride, ytterbium oxynitride or photoresist. The pixel structure as described in claim 1, wherein the column is an inverted trapezoid having an upper width and a lower width. 16. The pixel structure according to claim 1, wherein the The first and second illuminating regions form a unit of a halogen. 17. The morpheme structure of claim 1, wherein the first and second illuminating regions are equal in area. The halogen structure according to Item 1, wherein the total area of the first and second light-emitting regions is less than 1 square centimeter. 19. A halogen structure comprising: a substrate comprising a thin film transistor; a layer covering the substrate; a first electrode formed on the protective layer, comprising N (N^2) secondary electrodes, wherein the first electrode of the first electrode is electrically connected to the thin film transistor An insulating layer covering a portion of the first electrode, wherein the N sub-electrodes exposed by the first electrode are respectively defined as a first illuminating region to an N-th illuminating region; at least one pillar , disposed on the insulating layer, respectively surrounding the Clients Docket No. : AU0508037 TTfs Docket No: 0632-A50713TW/final/david 17 200828640 the first illuminating region to the Ν-l illuminating region; an organic luminescent layer covering the illuminating regions of the first electrode; a second electrode comprising N (1^$2) secondary electrodes disposed on the light emitting layer and corresponding to the N secondary electrodes of the first electrode, wherein the first electrode of the second electrode to the third electrode Each of the first electrodes of the i-light-emitting region is electrically connected to each other and forms at least one contact region. The gamma structure according to claim 19, wherein the at least one series contact region </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The semiconductor structure further includes at least one bus line disposed on an outer side of the light emitting regions, and the secondary electrode of the first electrode is electrically connected to the at least one metal wire. The halogen structure described in item 19 The at least one series contact region is located in a projection area of the at least one pillar. The memory structure according to claim 23, wherein the width of the projection region is substantially between 3 and 1. 25. The micron structure according to claim 19, wherein the at least one pillar is an inverted trapezoid having an upper width and a lower width. 2 6. As described in claim 9 A halogen structure, wherein the N light-emitting regions constitute a halogen unit. 27. The halogen structure according to claim 19, wherein the areas of the N light-emitting regions are substantially equal. 28·—A type of organic electroluminescent device, including: Clients Docket No. : AU0508037 TT^s Docket No: 0632-A50713TW/final/david 18 200828640 A substrate; a plurality of first halogens, a plurality of second halogens and a plurality of third halogens are disposed on the substrate, wherein each of the first halogen, the second halogen and the third halogen are respectively divided into N sub-pixels by the pillars and the N times are drawn The inter-prime is electrically connected in series, and a gap is formed between the first halogen, the pillar between the second halogen and the third pixel, and a second electrode is formed on the first halogen And the second halogen and the third halogen, wherein the second electrodes on the Nth sub-pixels are electrically connected to each other by the gap. The organic electroluminescent device of claim 28, wherein the first halogen is red halogen, the second halogen is green halogen, and the third halogen It is a blue halogen. The organic electroluminescent device of claim 28, wherein a gap between the first halogen, the second halogen and the third halogen is between 1 micrometer and 50 Micron. 3L. The organic electroluminescent element according to claim 28, wherein the second electrode on the second sub-pixel is a common electrode. Client's Docket No.: AU0508037 TT^ s Docket No: 0632-A50713TW/final/david 19