200827662 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種相位式探針感測結構，且特別是 有關於一種於一預定模態下共振之相位式探針感測結構。 【先前技術】 隨著日常科技用品越做越小，微小元件尺寸量測需求 逐^增加’這些微小元件包括微透鏡、生醫微流道^效 3車燃油噴嘴、光軌光義頭與大深寬比微機電元件 ^結構；然而，現有制技術之量測準確度係無法滿足 k些疋件的二維量測需求。掃瞄探針顯微鏡雖然具 有奈米等級的解析度，但量測範圍長寬高為為湖微米(、⑽ X 100微米_) X 5微米_)，其待測試片往往須具備平 坦的表面，因此掃瞄探針顯微鏡並非真正的三維量測；雖 =公分等級大，呈的二維奈米平台搭載掃瞄探針顯微 、’兄木、十，可以擴大掃瞄探針顯微鏡的量測範圍，然而掃俨 探針顯微鏡騎近場工作條件錢大量職圍所產生: ^料量’卻使得該方法不切實際；光學式非接觸探頭在 “寬比元件量測上多不可行，尤其是對於元件側壁的旦 測”曰曰顯示器製程中的印刷電路板雷射鑽孔之孔洞側‘ 輪卩里測，傳統二次元量測技術的準確度亦不夠高（僅在 1楗米左右）。然而，隨著生活日用品日益輕薄短小化，勹 括機械元件、微機電元件、光通訊元件與微加工精細元= t應用急速增加，對於厘米等級的微機電元件，獲釋高严 見比的微加工元件之三維量測，目前均無適當的儀器；;： 200827662 使用。 探針感測問題在於感測系統的設計與勢 造。探針接觸觸發_以tn__)的機制可大致區分為兩大 類：-類是間接式，亦即將探測球接觸待測物的能量透過 探針柄（probe shank)的形變傳遞至探針系統（ρ「〇^ 的感測部位；另—類是直接式，即在探測球位置產 生觸發訊號。這兩類接觸觸發機制的差異在於，間接式 ，，方式其探針柄必須具備足夠大的勁度(stress)，方 可將捺針球與待測物接觸點的接^ 針系統的感測部位而產生足夠大 =力^ ΐ測的應用範圍。 j 及 出之Ίΐ為吳國北卡羅萊納中央大學(nccu)所設計 出之—感測技術，其俜佶用阜糸腺上士 以壓-㈣1 r 懸臂樑連接一探針，並分別 电致動讀壓電❹彳料接至㈣臂樑， k Γ ;=ΐ:Γ崎〜㈣感測器則接收振動訊 :變==壓電感測器便會感測到訊號之相位 在有下到待測物。然而在此一 體積大，使得感測結構無法微型化。 •…、法連接較小之探針柄。 3·量測力量大’易損傷待測物。 4.受限於探斜拓 _她_，辰维動/向，故有著各向異性 因此，所二存有誤差。 種可被型化之感測結構，其係可 200827662 進行精密量測，且不受限於量測維度。 【發明内容】 本發明之主要目的係為提供一種相位式探針感測結 構’其係利用薄膜結構來進行致動與感测，並使探針枘與 感測結構於一預定模態下振動，以達成具有高量測靈敏度 之目的。 為達上述目的，本發明係提供一種相位式探針感測結 構，其係與一探針相連接，該相位式探針感測結構包含·· 一致動單元；與該致動單元相連接之一基材；以及與該基 材相連接之一感測單元；其中，該致動單元係產生一預定 頻率之振動，使該相位式探針感測結構於一預定模態下振 動。 … 較佳地，該基材係為一薄膜。 較佳地，該薄膜係由溶膠·凝膠丨)製程 較佳地，該薄膜係呈圓盤狀。 較佳地，該圓盤狀薄膜之直徑為7毫米（mm)。 較佳地，該基材之厚度係小於1〇〇微米（|jm)。 較佳地，該基材係為一直樑（prjsmatic beam)。 較仏地，違基材係為複數個彼此連接之直標，該複數 個直樑中之任兩相鄰直樑的夾角均相等。 較佳地’該基材係由石夕（silicon)所製成。 較佳地’該致動單元係為一壓電致動器。 較佳地，該壓電致動器係為一壓電薄膜。 較佳地，該壓電致動器係由壓電陶瓷（ρζτ)所製成。 200827662 較佳地，該壓 製成。 為係由高分子壓電材料（PVF2)所 較佳地’該壓電致動哭 較佳地，診产紅/时係由氧化鋅(Zn〇)所製成。 較佳地，該連f於該基材振動時之節點附近。 較佳地，兮疋係為-m電感測器。 較佳地，感測器係為-_膜。 =_電感測器係 行於= 探針感測結構咖 針柄之-端係一探針柄以及一探測頭，該探 較佳地另Γ端係該探測頭連接。 =地’該探針體成形。 進-步之了解貴與審 J鉍配合圖不砰細說明如後。 【實施方式】 δ月參照圖二及回二 測结構的立體與剖二:==:㈣式探針感 致動單元10、—其二細立編十感測結構1係由— 基材12更連接_土探針2 ；；及一=元14所組成，且該 -探測頭㈡，該探針柄 則與該探測頭22連接。在結構上，“ 另 例中，該致動單元10係為一壓電 ' =貫施 14則為一壓電感測薄 寻膜η亥感刪單元 賴痛12亦為-薄膜化低耗損 200827662 材料例如石夕Ba圓’ §亥致動單元10與該感測單元14係分 別貼附於該基材12之兩側。 一田里測日守，使用者係以特定頻率之電壓作動該致動單 元1〇，該致動單元1〇會產生-預定頻率之振動並帶動整 固相位結針感測結構彳振動；然後，再驢該致動單元 〇之振動頻率，如此便能於—預定振動頻率（較佳為接近 率之模態’如圖四所示）下操作整個相位式探針感測 、、、。構1，進而對待測物3進行量測。 再=參照圖，’其㈣本發⑽目位式探針制結構之 ，作示思圖。其中當作動該相位式探針感測結構]時，該 =立式楝針感測結構彳較佳係於—預定模態下振動，並使 2針2處於節點位置（按此處所指之節點位置係為「在 =、、占=」’而並非指位於節點位置上）；在此種操作槿能 下，楝針2可獲得較佳之靈敏度，因 待測物3即可進行量測。 -而大的知力接觸 残、、則2,圖五及圖六，其係分別為本發明相㈣ 汉測、纟σ構之兩變化實施例。於圖五中，該致動單元彳〇鱼^ 感測單元14係分別貼附於該基材12之兩側部分位了 = 即該致動單元10只要能致動該基材12,使該基材12二動 振針2振動即可，並非限於壓電薄膜；而該感 = 只要能接收到基材12振動相位是否有改變即可， 限於壓電薄膜。類似地，該致動單元10亦可藉由侷 1〇〇+連接並將振動能量傳至基材12，而該感測單元，線 可藉由一傳導線14〇連接至該基材12,並 亦 接收，如圖六料。 仃振動相位之 9 200827662 |S| 2T ^ 姑》纟、、夕主圖七c係為本發明相位式探針感測結構之基 • /形^大，多種實施例（為簡化圖式，致動單元與感測單元 、、”略）。於圖七A中，該基材12係為一直樑（prismatic 1探針2則連接於該基材12之中心位置。於圖七B .$ &基材12係為兩根彼此連接交會之直樑，且該等直樑 ,之=兩相鄰夾角均相等（亦即該基材12 4-對稱圖 升y )探針2則連接於該基材12之中心位置。於圖七◦中， 广 祕材12貝,J為一輪轂狀圓環，中央連接有複數根直樑，探 ' 針2亦連接於該基材12之巾心位置。以上變化僅用於示例 而非限制，類似變化於此將不再一一贅述。 I於本發明中，該薄膜基材係可由溶膠-凝膠（So卜Gel) ，私所衣成。且该薄膜基材係為對稱之形狀，例如直樑狀、 圓盤狀或輪轂散。當該薄膜基材為圓盤狀時，其直徑較佳 係為7毫米（_)，且厚度約在數十微米_)，_般係小於 ⑽微米_)。該致動單元係可為一壓電致動器，例如壓 電薄膜，且該致動單元可由壓電陶瓷（ρζτ)、高分子壓電材 1料(PVF2)或氧化鋅(Ζη〇)所製成。同樣地，該感測單元係 可為一壓電感測器或壓阻材料，例如壓電薄膜或壓阻薄 膜，當然，该致動單元和感測單元亦非僅侷限於上述物品， 凡只要能達到本發明之技術手段者，皆在本發明之權利範 . 圍内，於此不再贅述。 • 在實施時，該探針係連接於該基材振動時之節點位置 附近以獲得最佳效果。當然，該探針並非一定要連接於該 節點位置附近，其只要能與該基材連接而作為接收外界訊 號（如與待測物接觸）之橋樑即可。又，該相位式探針感 10 200827662 測結構之振動位移方向係較佳平行於該探針之長轴方向， 如此可精確進行量測，減少各向異性(Anisotropy)之問題。 如此一來，根據本發明所製作之相位式探針感測結 構，係可提高探針的量測靈敏度，同時大幅降低量測時探 針對待測物的施力大小，有效改良先前技術之缺失。 唯以上所述者，僅為本發明之最佳實施例而已，當不 能以之限定本發明所實施之範圍。即大凡依本發明申請專 利範圍所作之均等變化與修飾，皆應仍屬於本發明專利涵 蓋之範圍内，謹請貴審查委員明鑑，並祈惠准，是所至 禱。 【圖式簡單說明】 圖一係為先前技術中之感測裝置示意圖； 圖二係為本發明相位式探針感測結構的立體圖； 圖三係為本發明相位式探針感測結構的剖面圖； 圖四係為本發明相位式探針感測結構之操作示意圖； 圖五係為本發明相位式探針感測結構之一變化實施例； 圖六係為本發明相位式探針感測結構之另一變化實施例； 圖七A係為本發明中之基材形狀的一實施例； 圖七B係為本發明中之基材形狀的另一實施例；以及 圖七C係為本發明中之基材形狀的又一實施例。 【主要元件符號說明】 1 -相位式探針感測結構 2-探針 200827662 3-待測物 10-致動單元 12-基材 14-感測單元 20-探針柄 22-探測頭 100-傳導線 140-傳導線BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a phased probe sensing structure, and more particularly to a phased probe sensing structure that resonates in a predetermined mode. [Prior Art] As daily technology products become smaller and smaller, the measurement requirements of small component sizes increase. 'These tiny components include microlenses, biomedical microchannels, 3 effects, fuel nozzles, optical and optical heads, and deep Wide-area MEMS components ^ structure; however, the measurement accuracy of the existing technology can not meet the two-dimensional measurement requirements of some of the components. Although the scanning probe microscope has a resolution of nanometer grade, the measuring range has a length, a width and a height of lake micrometer (, (10) X 100 micrometers _) X 5 micrometers _), and the film to be tested often has a flat surface. Therefore, the scanning probe microscope is not a true three-dimensional measurement; although the = cm grade is large, the two-dimensional nano platform is equipped with a scanning probe microscope, 'brother wood, ten, can expand the measurement of the scanning probe microscope Scope, however, the broom probe microscope rides near-field working conditions and generates a large number of occupations: ^The amount of material' makes the method impractical; optical non-contact probes are not feasible in "width ratio component measurement, especially It is the measurement of the side wall of the component, "the hole side of the laser hole of the printed circuit board in the display process", and the accuracy of the traditional two-dimensional measurement technology is not high enough (only about 1 cm) . However, with the increasing thinness and thinness of daily necessities, including mechanical components, micro-electromechanical components, optical communication components and micro-machining fine elements = t application has increased rapidly, for the micro-electromechanical components of the centimeter level, the micro-machining of high-definition ratio is released. Three-dimensional measurement of components, there is currently no suitable instrument;;: 200827662 use. The probe sensing problem lies in the design and construction of the sensing system. The mechanism of probe contact triggering _tn__ can be roughly divided into two categories: - the class is indirect, that is, the energy of the probe ball contacting the object to be tested is transmitted to the probe system through the deformation of the probe shank (ρ "The sensing part of 〇^; the other type is direct, that is, the trigger signal is generated at the position of the detecting ball. The difference between the two types of contact triggering mechanism is that, indirect, the probe handle must have sufficient stiffness. (stress), the application area of the contact system of the contact point of the needle and the object to be tested can be generated to generate a large enough force = ΐ ΐ ΐ 。 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴 吴The central university (nccu) designed the sensing technology, which uses a gland to connect a probe with a pressure-(four) 1 r cantilever beam and electrically actuates the piezoelectric material to the (four) arm. Beam, k Γ ;=ΐ:Γ崎~(4) The sensor receives the vibration signal: change==the voltage sensor will sense the phase of the signal to the object under test. However, it is bulky here. So that the sensing structure can not be miniaturized. •..., the method is connected to the smaller probe handle. Injury to the object to be tested. 4. Restricted by the probing extension _ her _, Chen Wei movement / direction, it has an anisotropy, therefore, there are errors. The sensing structure can be typed, its system can be 200827662 Precision measurement is performed, and is not limited to the measurement dimension. SUMMARY OF THE INVENTION The main object of the present invention is to provide a phased probe sensing structure that utilizes a thin film structure for actuation and sensing, and The probe and the sensing structure vibrate in a predetermined mode to achieve high measurement sensitivity. To achieve the above object, the present invention provides a phase probe sensing structure which is coupled to a probe. Connecting, the phased probe sensing structure comprises: an actuating unit; a substrate coupled to the actuating unit; and a sensing unit coupled to the substrate; wherein the actuating unit is The vibration of a predetermined frequency causes the phase probe sensing structure to vibrate in a predetermined mode. Preferably, the substrate is a film. Preferably, the film is made of a sol/gel. Preferably, the film is in the form of a disk. Preferably The disc-shaped film has a diameter of 7 mm. Preferably, the thickness of the substrate is less than 1 μm (|jm). Preferably, the substrate is a prjsmatic beam. More preferably, the substrate is a plurality of straight lines connected to each other, and the angle between any two adjacent straight beams of the plurality of straight beams is equal. Preferably, the substrate is made of silicon. Preferably, the actuating unit is a piezoelectric actuator. Preferably, the piezoelectric actuator is a piezoelectric film. Preferably, the piezoelectric actuator is pressed. Made of electric ceramic (ρζτ). 200827662 Preferably, the press is made by the piezoelectric piezoelectric material (PVF2), which is preferably 'the piezoelectric actuator is crying better, and the diagnosis is red/time. Made of zinc oxide (Zn〇). Preferably, the connection f is near the node when the substrate vibrates. Preferably, the tether is a -m inductive detector. Preferably, the sensor is a - film. The =_inductor is in the = probe sensing structure. The end of the needle handle is a probe handle and a probe. Preferably, the probe is connected to the probe. = ground 'The probe body is shaped. The understanding of the progress of the step-by-step and the review of the J铋 diagram are not described in detail. [Embodiment] The δ month refers to the second and second measurement structures of the second and second measurement structures: ==: (4) probe-sensing actuation unit 10, the second fine-stacked ten-sensing structure 1 is composed of - substrate 12 More connected to the soil probe 2; and a = element 14, and the probe (2), the probe handle is connected to the probe 22. In terms of structure, "in another case, the actuating unit 10 is a piezoelectric device." = 14 is a pressure-sensing thin film-finding film η 感 删 单元 赖 赖 赖 12 亦 亦 - - - - - 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 Materials such as the Shixi Ba circle ' § hai actuating unit 10 and the sensing unit 14 are attached to the two sides of the substrate 12 respectively. A field is measured and the user operates at a specific frequency. The moving unit 1〇, the actuating unit 1〇 generates a vibration of a predetermined frequency and drives the solidified phase pin sensing structure to vibrate; then, the vibration frequency of the actuating unit is further clamped, so that the predetermined vibration can be The frequency (preferably the mode of the proximity rate is shown in FIG. 4) is operated under the entire phase probe sensing, and the structure 1 is measured, and then the object to be measured 3 is measured. Then, refer to the figure, 'the (four) In the present invention, (10) the position probe type structure is used as a schematic diagram. When the phase probe sensing structure is actuated, the vertical needle sensing structure 彳 is preferably tied to a predetermined mode. Vibrate and make 2 pin 2 in the node position (as the position of the node here is "in =, 占 ="" and The non-finger is located at the node position; in this operation, the needle 2 can obtain better sensitivity, and the object to be tested 3 can be measured. - The big intellectual contact with the residual, then 2, Fig. 5 and Fig. 6, which are the two variants of the invention (4) Han measurement and 纟 σ structure. In FIG. 5, the actuation unit squid sensing unit 14 is attached to the two sides of the substrate 12 respectively. That is, the actuation unit 10 can actuate the substrate 12 so that the substrate 12 can be actuated. The substrate 12 and the second movable vibrating needle 2 may be vibrated, and are not limited to the piezoelectric film; and the feeling is limited to the piezoelectric film as long as it can receive a change in the vibration phase of the substrate 12. Similarly, the actuation unit 10 can also connect the vibration energy to the substrate 12 by means of a local connection, and the sensing unit can be connected to the substrate 12 by a conductive line 14〇. Also received, as shown in Figure 6.仃Vibration phase 9 200827662 |S| 2T ^ 姑》, 夕主图七c is the basis of the phase probe sensing structure of the invention. / / shape ^, a variety of examples (to simplify the diagram, resulting in The moving unit and the sensing unit are omitted. In Fig. 7A, the substrate 12 is a straight beam (prismatic 1 probe 2 is connected to the center of the substrate 12. Figure 7B. $ & The substrate 12 is a pair of straight beams that are connected to each other, and the straight beams are equal to each other (that is, the substrate 12 is symmetrically y). The probe 2 is connected to the The center position of the substrate 12. In Fig. 7◦, the wide secret material is 12, J is a hub-shaped ring, and a plurality of straight beams are connected at the center, and the probe 2 is also connected to the center of the substrate 12 The above variations are for illustrative purposes only and not limiting, and similar variations will not be repeated here. I In the present invention, the film substrate can be made of a sol-gel (Sob Gel). The film substrate has a symmetrical shape, such as a straight beam shape, a disk shape or a hub. When the film substrate is in the shape of a disk, the diameter thereof is preferably 7 mm (_), and is thick. The degree is about tens of micrometers _), _ is less than (10) micrometers _). The actuation unit can be a piezoelectric actuator, such as a piezoelectric film, and the actuation unit can be piezoelectric ceramic (ρζτ), The piezoelectric material is made of PVF2 or zinc oxide. Similarly, the sensing unit can be a piezoelectric detector or a piezoresistive material, such as a piezoelectric film or a piezoresistive film. And of course, the actuating unit and the sensing unit are not limited to the above-mentioned items, and any ones that can achieve the technical means of the present invention are within the scope of the present invention and will not be described herein. When the probe is connected to the vicinity of the node position when the substrate vibrates, the best effect is obtained. Of course, the probe is not necessarily connected to the vicinity of the node, as long as it can be connected to the substrate to receive the outside. The bridge of the signal (such as contact with the object to be tested) can be used. Moreover, the direction of the vibration displacement of the phase probe probe 10 200827662 is preferably parallel to the long axis direction of the probe, so that the measurement can be accurately performed. Reduce the problem of anisotropy. According to the phase probe sensing structure manufactured by the invention, the measurement sensitivity of the probe can be improved, and the magnitude of the force applied by the probe to the test object during the measurement is greatly reduced, thereby effectively improving the lack of the prior art. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto. That is, the equivalent changes and modifications made by the scope of the present invention should still be covered by the present invention. Within the scope of this, I would like to ask your review committee to give a clear explanation and pray for it. It is the prayer. [Simplified illustration] Figure 1 is a schematic diagram of the sensing device in the prior art; Figure 2 is the phase probe of the present invention. 3 is a cross-sectional view of the phased probe sensing structure of the present invention; FIG. 4 is a schematic diagram of the operation of the phased probe sensing structure of the present invention; FIG. 6 is another embodiment of the phase probe sensing structure of the present invention; FIG. 7A is an embodiment of the shape of the substrate in the present invention; FIG. Another shape of the substrate of the embodiment of the present invention; and the shape of the substrate of still another embodiment of the invention, the present seven C System FIG. [Main component symbol description] 1 - Phase probe sensing structure 2-probe 200827662 3-Test object 10 - Actuating unit 12 - Substrate 14 - Sensing unit 20 - Probe handle 22 - Probe 100 - Conduction line 140-conducting line