200824127 U6lU033irW 19663twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有_-種主動元鱗職板，且特別是 關於-種具有靜電放電（electrostaticdischarge，e 功效的主動元件陣列基板。 是 【先前技術】 在液晶顯示器的製造過程中，操作人員、機台或檢測 • 儀器都可能帶有靜電，而上述的帶電體（操作人員、機A 或檢測儀器）接觸到液晶顯示面板時，可能導致液晶顯示 面板内的元件以及電路遭受靜電放電（.Ο驗 discWgO破壞。因此，一般會在液晶顯示面板之周邊線路 ，中十靜電放電保護電路。以主動矩陣液晶顯示面板來 就通¥疋在製造主動元件陣列的過程中一併將靜電放電 保4¾路形成於基板上，且使主動元件陣列與這些靜電放 電保遵電路電性連接。如此一來，當液晶顯示面板遭受靜 電放電衝擊時，靜電放電保護電路能將靜電分散、減弱， 以避免靜電直接衝擊顯示區内部之元件及電路。 圖1是習知主動元件陣列基板之示意圖。請參考圖i， 主動元件陣列基板11〇具有一顯示區A與一周邊線路區 B，而主動元件陣列基板ho主要是由一基板112、多條掃 描線^14、多條資料線116、多個畫素單元118、一引線120、 多個靜電放電保護元件122與多個接墊（pad)124所構成。 其中，掃描線H4與資料線116配置於基板112上，而晝 素單兀118配置於顯示區A内。具體而言，掃描線114與 6 200824127 0610053rrW 19663twf.doc/n 資料線116電性連接至晝素單元Π8,而電壓訊號可以藉由 掃描線114與資料線116而傳遞至晝素單元118中。此外， 知描線114與資料線116分別與對應之接墊124電性連接。 由圖1可知，引線120配置於周邊線路區B内，而與 靜電放電保護元件122之一端電性連接。靜電放電保護元 件122之另一端會分別與對應之掃描線114及資料線116 電性連接。具體而言，當靜電放電現象於基板112上發生。 。 。 。 。 。 。 。 。 The substrate is [previous technology] In the manufacturing process of the liquid crystal display, the operator, the machine or the tester/device may be electrostatically charged, and the above-mentioned charged body (operator, machine A or detecting instrument) is in contact with the liquid crystal display panel. At the same time, the components and circuits in the liquid crystal display panel may be subjected to electrostatic discharge (. Detecting discWgO damage. Therefore, generally, the circuit is in the periphery of the liquid crystal display panel, and the ten electrostatic discharge protection circuit is provided. The active matrix liquid crystal display panel is used. ¥疋In the process of fabricating the active device array, an electrostatic discharge is formed on the substrate, and the active device array is electrically connected to the electrostatic discharge protection circuit. Thus, when the liquid crystal display panel is subjected to electrostatic discharge When impacted, the ESD protection circuit can disperse and weaken the static electricity to avoid static Directly impacting the components and circuits inside the display area. Figure 1 is a schematic diagram of a conventional active device array substrate. Referring to Figure i, the active device array substrate 11 has a display area A and a peripheral line area B, and the active device array substrate The ho is mainly composed of a substrate 112, a plurality of scanning lines 14, a plurality of data lines 116, a plurality of pixel units 118, a lead 120, a plurality of electrostatic discharge protection elements 122, and a plurality of pads 124. The scan line H4 and the data line 116 are disposed on the substrate 112, and the pixel unit 118 is disposed in the display area A. Specifically, the scan line 114 and 6 200824127 0610053rrW 19663twf.doc/n data line 116 electrical The voltage signal can be transmitted to the pixel unit 118 through the scan line 114 and the data line 116. Further, the line 114 and the data line 116 are electrically connected to the corresponding pads 124, respectively. As shown in Fig. 1, the lead 120 is disposed in the peripheral line region B and electrically connected to one end of the electrostatic discharge protection device 122. The other end of the electrostatic discharge protection device 122 is electrically connected to the corresponding scan line 114 and data line 116, respectively. Specifically, when the electrostatic discharge phenomenon occurs on the substrate 112
時’靜電荷可以藉由引、線120分散，以避免靜電荷累積。 另=方面，靜電放電保護元件122可以消耗靜電荷之能量 以減低靜電放電之衝擊。 值侍/注意的是，引線12〇會跨過掃描線114及資料線 u6。當靜電放電現象發生於接墊124端時，靜電會直接流 經跨線處C，很容易誘使靜電在跨線處c放電，進而導致 引線120與掃描線114 (資料線116)有短路的現象。這备 造成生產良率下降，連帶地製造成本也會上升，實有改i 【發明内容】 板，^=4’本發明之目的是提供—種主動元件陣列基 而有線路短路動7"件㈣基板容易因靜電放電破壞 列基^他「目的，本發_，動元件陣 區。本發區以及位於顯示區外之—周邊線路 元、多條第-導繞70 „板包括—基板、多個晝素單 …、、夕條第二導線、一引線、至少一第一 7 200824127 06100531TW 19663twf.doc/n -第二靜電放電保護電路。其 中，畫素單元陣列排列於基板上，且位於顯示區内。此外， 第一導線與第二導線皆配置於基板上，且位於周邊線路區 内，弟一導線與第一導線由周邊線路區内延伸而並分別與 晝素單元電性連接。上述之引線配置於周邊線路區内，且 橫跨過第一導線，並劃分出兩侧。另外，第一靜電放電保 濩電路配置於引線之一侧，且電性連接於任一條第一導線 與引線之間。上述之第二靜電放電保護電路對應第一靜電 放電保護電路而配置於引線之另一侧，且第二靜電放電保 護電路與第一靜電放電保護電路電性連接至相同之第一導 線。第二靜電放電保護電路透過引線而與第—靜電保 護電路電性連接。 ’、 在本發明之-實施例中，上述之第一靜電放電保護電 路包括-第-主動元件、一第二主動元件、一第三 件與-第四主動元件。其中，第—主動元件包括—第一源 極、-第-汲極與-第-間極。上述第 ί性連接至第：導線。第二主動元件包括-第二;極 極ΐ:弟一，。上述第二源極與第二閘極電性連 接至弟-錄，㈣二祕電性連接至引線。第三 件包括-第三源極、一第三汲極與一第三閘極。：述： 源極與第三閘極電性連接至引線。第四主動 = 四源極、-第四汲極與一第四間極 極2 = 閘極電性連接至第：r汲拣，而笛^ 弟原極與弟四 線。祕，而㈣雜電性連接至第一導 8 200824127 0610053ITW 19663twf.doc/n 在本發明之-實施例中，上述之第 路包括一第五主動元件、一第丄电私保。蔓電 件與-第八主動元二中第件二第七主動元 ^ 弟五主動兀件包括一第五源 二二！五？極與一第五閘極。上述第五源極與第五閘極 二^連接至弟:導線。第六主動元件包括—第六源極、一 極與-第六閘極。上述第六源極與第六閘極電性連 而第六汲極電性連接至引線。第七主動元 牛匕括#七源極、一第七沒極與一第七閉極。上述第七 源極與第七閘極電性連接至引線。第人主動元件包括 :原極、第八汲極與一第八閘極。上述第八源極與第八 甲虽電性連接至第七沒極，而第八汲極電性連接至第 線。 〒 路雷之Γ實施例中，上述之第一靜電放電保護電 恭Πϊΐ 之第一導線之間’第一靜電放電保護 H一弟一主動元件、一第二主動元件與一第三主動 中，第一主動元件包括一第一源極、一第一汲極 i綠弟r閘極。上述第—源極與第—閘極電性連接至第-1門弟—主動元件包括—第二源極、—第二没極與-第 -，極。上述第二源極與第二閘極電性連接至第一没極， ，弟二，極電性連接至引線。第三主動元件包括一第三源 ^二沒極與一第三閉極。上述第三没極電性連接至 t閘極’而第三源極與第三雜電性連接至下一條第一 導線。 在本發明之-實施例中，上述之第二靜電放電保護電 9 200824127 0610053ITW 19663twf.doc/n 守深^間 弟二靜電放電保護 峪冤性運接於兩相鄰之第 電路包括-第四主動元件、—第五主動元件鱼二二= 。其中’第四主動元件包括一第四源極:、一第 二弟四閘極。上述第賴極電性連接 第 主動元件包括一第五源極、—第錢極與—第=弟f 述第四源極與第四閘極電性連接至第五 二、。上 與第五=極«性連接至5丨線。第六主動元件包括 極、一第六没極與一第六閘極。上述第丄一、"、 電性逵接$繁77巧盔、弟，、源極與弟六閘極 連接至弟五及極，而弟六汲極電性連接至 導線。 彳木弟一 在本發明之-實施例中’上述第一導線可以 且第二導線可以為資料線。 十田線 在本發明之一實施例中，上述第一主動元件之 、 極延伸並跨過第一導線，以形成一第一跨線部。 —源 在本發明之一實施例中，上述第三主動元件之第二、 極延伸並跨過下一條第一導線，以形成一第二跨線部。二源 在本發明之一實施例中，上述第一導線可以為資 且第二導線可以為掃描線。 、’、、、、 在本發明之一實施例中，上述第一主動元件之第— 極延伸並由第一導線跨過，以形成一第三跨線部。 甲 在本發明之一實施例中，上述第三主動元件之第三閑 極延伸並由下一條第一導線跨過，以形成一第四跨線部。甲 本發明之主動元件陣列基板於引線之兩侧分別配f _ 一靜電放電保護電路與第二靜電放電保護電路，而使引線 200824127 061005311W 19663tw£doc/n 橫跨第一導線處位於第_毯+被 電保護電路之間。因：，以;保護電路與第，靜電玫 么A 1，一斤 ^ 田靜毛放電現象發生時，靜電荷 電放電保護電路或第二靜電放電保護電 ，’才^機ΐ流經引線橫跨第—導線處。這樣可以有效避 情==跨弟導線處直接受到靜電放電破壞而有短路的 目的、特徵和優點能更明顯 並配合所附圖式，作詳細說The static charge can be dispersed by the lead and line 120 to avoid static charge accumulation. On the other hand, the electrostatic discharge protection element 122 can consume the energy of the electrostatic charge to reduce the impact of the electrostatic discharge. It is noted that the lead 12 跨 will cross the scan line 114 and the data line u6. When the electrostatic discharge phenomenon occurs at the end of the pad 124, the static electricity directly flows through the crossover line C, and it is easy to induce the static electricity to discharge at the crossover line c, thereby causing the lead wire 120 and the scan line 114 (the data line 116) to be short-circuited. phenomenon. This will result in a decrease in production yield and a corresponding increase in manufacturing costs. It is a change. [Inventive content] Board, ^=4' The purpose of the present invention is to provide an active device array base with line short-circuiting 7" (4) The substrate is easily destroyed by electrostatic discharge. The purpose of the present invention is to transmit the array area. The local area and the peripheral line element outside the display area and the plurality of first-conducting wires 70 include a substrate. a plurality of halogen single ..., a second wire of the eve, a lead, at least a first 7 200824127 06100531TW 19663twf.doc / n - a second electrostatic discharge protection circuit. The pixel unit array is arranged on the substrate and located in the display area. In addition, the first wire and the second wire are disposed on the substrate, and are located in the peripheral circuit region, and the first wire and the first wire are extended from the peripheral circuit region and electrically connected to the halogen unit respectively. The above leads are disposed in the peripheral line region and span the first wire and are divided into two sides. In addition, the first electrostatic discharge protection circuit is disposed on one side of the lead and electrically connected between any one of the first wires and the lead. The second electrostatic discharge protection circuit is disposed on the other side of the lead corresponding to the first electrostatic discharge protection circuit, and the second electrostatic discharge protection circuit and the first electrostatic discharge protection circuit are electrically connected to the same first conductive line. The second electrostatic discharge protection circuit is electrically connected to the first electrostatic protection circuit through the lead wires. In the embodiment of the present invention, the first electrostatic discharge protection circuit includes a first-active element, a second active element, a third element and a fourth active element. Wherein, the first active element comprises - a first source, a - a first drain and a - a first pole. The above-mentioned first is connected to the: wire. The second active component includes - the second; the extreme pole: the brother one. The second source and the second gate are electrically connected to the second recording, and the (four) second is electrically connected to the lead. The third component includes a third source, a third drain and a third gate. : The source and the third gate are electrically connected to the lead. The fourth active = four source, the fourth drain and the fourth pole 2 = the gate is electrically connected to the first: r pick, and the flute ^ brother is the same as the fourth line. And (4) the hybrid connection to the first guide 8 200824127 0610053ITW 19663twf.doc/n In the embodiment of the invention, the above-mentioned path includes a fifth active component, a third electrical protection. The vine electric appliance and the eighth ninth active yuan two of the second and seventh ninth active yuan ^ the youngest five active 包括 pieces include a fifth source two two! Fives? A pole and a fifth gate. The fifth source and the fifth gate are connected to the wire: a wire. The sixth active component includes a sixth source, a pole and a sixth gate. The sixth source and the sixth gate are electrically connected to each other, and the sixth drain is electrically connected to the lead. The seventh initiative yuan Niu Yucang #七源极, a seventh no pole and a seventh closed. The seventh source and the seventh gate are electrically connected to the lead. The first active component includes: a primary pole, an eighth pole, and an eighth gate. The eighth source and the eighth electrode are electrically connected to the seventh pole, and the eighth pole is electrically connected to the first line. In the embodiment of the 雷路雷Γ, the first electrostatic discharge protection of the first electric discharge is between the first electric discharge protection, the first electrostatic discharge protection, the second active element, and the second active element. The first active component includes a first source, a first drain, and a green gate. The first source and the first gate are electrically connected to the first -1st brother - the active component comprises - the second source, the second pole and the - pole. The second source and the second gate are electrically connected to the first electrode, and the second electrode is electrically connected to the lead. The third active component includes a third source, a second pole, and a third closed pole. The third non-polarity is electrically connected to the t-gate and the third source and the third are electrically connected to the next first conductor. In the embodiment of the present invention, the second electrostatic discharge protection device 9 200824127 0610053ITW 19663twf.doc/n 守深^弟弟二静电电保护保护峪冤的接接在两 adjacent的电路包括包括四四The active component, the fifth active component fish two two =. Wherein the fourth active component comprises a fourth source: a second brother and four gates. The first active device includes a fifth source, the first source and the fourth gate, and the fourth source and the fourth gate are electrically connected to the fifth. Connected to the fifth line with the fifth = pole. The sixth active component includes a pole, a sixth pole, and a sixth gate. The above-mentioned first one, ", electric 逵 $ $ 繁 77 巧 巧 巧 、 、 、 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧 巧彳木弟一 In the embodiment of the invention, the first wire may be the second wire and the second wire may be a data line. In the embodiment of the present invention, the first active element has a pole extending across the first wire to form a first jumper. - Source In one embodiment of the invention, the second, pole of the third active component extends across the next first conductor to form a second jumper. In another embodiment of the invention, the first wire may be a second wire and the second wire may be a scan line. In one embodiment of the invention, the first pole of the first active component extends and is spanned by the first wire to form a third jumper. In an embodiment of the invention, the third idle electrode of the third active component extends and is spanned by the next first wire to form a fourth jumper. The active device array substrate of the present invention is respectively provided with f _ an electrostatic discharge protection circuit and a second electrostatic discharge protection circuit on both sides of the lead, so that the lead wire 200824127 061005311W 19663 tw/doc/n is located on the first blanket across the first wire + is electrically protected between circuits. Because:, to; protection circuit and the first, electrostatic rose A 1, a pound ^ Tian Jingmao discharge phenomenon occurs, static charge electric discharge protection circuit or second electrostatic discharge protection electricity, 'only ^ machine ΐ flow through the lead across The first wire. This can effectively avoid the situation == The purpose, characteristics and advantages of the short circuit of the cross-section conductor directly damaged by the electrostatic discharge can be more obvious and cooperate with the drawing, for details
為讓本發明之上述和其他 易懂，下文特舉較佳實施例， 明如下。 【實施方式】 第一實施例 圖/疋本發明第一實施例之主動元件陣列基板之示意 圖^爹考圖2，本發明之主動元件陣列基板細具有一領 示區Α以及位於顯示區a外之_周邊線路區Β。具體而言 ^發明之主動元件陣列基板2〇〇包括一基板21〇、多個晝素 單元212、多條第一導線2Μ、多條第二導線216、一 ^線 218、至少一第一靜電放電保護電路220與至少一第二靜電 放電保護電路23G。其中，晝素單元212陣列排列於基板 210上且位於顯示區a内，而第一導線214與第二導線 可以劃分出晝素單元212之所在位置。 一:來説，每一晝素單元212可包括至少一主動元件 212a與一晝素電極212b，其中主動元件212a電性連接至晝 素電極212b。這裡要說明的是，主動元件212a之數目端視 晝素單元212之設計而定，例如具有預充電（pre_charge) 200824127 0610053ITW 19663tw£doc/n 二片之：素产單兀212可能就需要兩個以上的主動元件 η，在此並無意侷限每一晝素單元主 212a之數目。 、=細地說’位於周邊線路區B内之第一導線214與第 216之一端可分別延伸至顯示區A内而與晝素單元 甩性連接。另一方面，第一導線214鱼第二導線216之 另一端可以分別連接至第一接塾214a與第二接塾2他。在 • 本^例中是^第一導線2U為掃描、線（醒line)，而第 二導線216為資料線（data line)作例子，以便說明。其中， 第一導線214電性連接至主動元件212a之閘極，而第二導 ，216電性連接至主動元件212a之源極。實務上，開關訊 號可以藉由第一導線214之傳遞而將主動元件212a開啟， 而主動元件212a在開啟後顯示訊號可以藉由第二導線216 而傳遞至晝素電極212b中。 圖3是本發明第一實施例之靜電放電保護電路之電路 示思圖。請同時參考圖2與圖3，引線218配置於周邊線路 ❿區B内，且橫跨過第一導線214並劃分出兩侧。本發明之 第一靜電放電保護電路220配置於引線218之一侧，且電 性連接於第一導線214與引線218之間。值得注意的是， 本發明之第二靜電放電保護電路230對應第一靜電放電保 護電路220而配置於引線218之另一侧。換言之，第一靜 電放電保護電路220與第二靜電放電保護電路230分別位 於引線218之兩側。詳細地說’第二靜電放電保護電路230 可以透過引線218而與第一靜電放電保護電路220電性連 12 200824127 0610053ITW 19663twf.doc/n 接，且第一靜電放電保謅雷玫 _ 路230電性連接至相同之第_導線。〃私放私保遵電 具體而言，當靜電放電現象發生於 處（如圖3所示）時，部分之靜電荷會先藉由l靜2 電保護電路·科散耻，喊 = 外’靜電荷流入第-靜電放電保護電路220 i t雜: Π8而分散開來，以避免基板210上有過量的靜 累積。由於從C2處來之靜雷科合 餘電何 路22〇分散與消耗。因此，第」莫二，一靜電放電保護電 飧考Γ1叮放名- 弟¥線214與引線218之跨 可避免直接讀電放電衝擊， 導線214與引線218於跨線處〇發生短路 弟— 處時電處 =第-導_之《 二靜電放電保護電路230而分散^之靜電何會先猎由第 會通過第-導線214與弓汰。之後靜電荷才有機 線214與引線218之跨線處α位於^^卜由於第-導 220與第二靜電放電保護電路23G$靜電放電保護電路 電保護電路220與第二靜電放"因此，第—靜電放 護第-導線2H與引線218之^料以有效保 放電之破壞。 5綠處C1免於直接受到靜電 線二 與第二靜電放電賴電路23() ^㈣放電保護電路220 -導線214與引線218之跨 j散’這樣可有效避免第 、&1直接受到靜電放電之破 200824127 0610053ITW 19663twf.doc/nIn order to make the above and other aspects of the present invention readily apparent, the preferred embodiments are described below. [Embodiment] FIG. 2 is a schematic diagram of an active device array substrate according to a first embodiment of the present invention. The active device array substrate of the present invention has a lead-in area and is located outside the display area a. _ surrounding line area Β. Specifically, the active device array substrate 2 includes a substrate 21, a plurality of pixel units 212, a plurality of first wires 2, a plurality of second wires 216, a wire 218, and at least a first static electricity. The discharge protection circuit 220 and the at least one second electrostatic discharge protection circuit 23G. The array of the pixel units 212 is arranged on the substrate 210 and located in the display area a, and the first wire 214 and the second wire can define the position of the pixel unit 212. One: each of the pixel units 212 can include at least one active component 212a and a halogen electrode 212b, wherein the active component 212a is electrically connected to the halogen electrode 212b. It should be noted that the number of active elements 212a depends on the design of the pixel unit 212, for example, there are two pre-charges (pre_charge) 200824127 0610053ITW 19663 tw/doc/n: the production unit 212 may need two The above active element η is not intended to limit the number of each pixel unit main 212a here. The first wire 214 and the one end of the second wire 214 located in the peripheral line region B may extend into the display area A to be connected to the halogen element. Alternatively, the other end of the first wire 214 fish second wire 216 may be coupled to the first port 214a and the second port 2, respectively. In the present example, the first wire 2U is a scan, a line (awake line), and the second wire 216 is a data line as an example for illustration. The first wire 214 is electrically connected to the gate of the active component 212a, and the second conductor 216 is electrically connected to the source of the active component 212a. In practice, the switching signal can be turned on by the transmission of the first wire 214, and the active component 212a can be transmitted to the pixel electrode 212b by the second wire 216 after being turned on. Fig. 3 is a circuit diagram of an electrostatic discharge protection circuit according to a first embodiment of the present invention. Referring to FIG. 2 and FIG. 3 simultaneously, the lead 218 is disposed in the peripheral line B and spans the first wire 214 and is divided into two sides. The first ESD protection circuit 220 of the present invention is disposed on one side of the lead 218 and electrically connected between the first lead 214 and the lead 218. It is to be noted that the second electrostatic discharge protection circuit 230 of the present invention is disposed on the other side of the lead 218 corresponding to the first electrostatic discharge protection circuit 220. In other words, the first electrostatic discharge protection circuit 220 and the second electrostatic discharge protection circuit 230 are respectively located on both sides of the lead 218. In detail, the second electrostatic discharge protection circuit 230 can be electrically connected to the first electrostatic discharge protection circuit 220 through the lead 218, and the first electrostatic discharge protects the RAY RAY _ _ 230 Connect to the same _ wire. In particular, when the electrostatic discharge phenomenon occurs (as shown in Figure 3), part of the static charge will first be silenced by the static electricity protection circuit. The static charge flows into the first-electrostatic discharge protection circuit 220 and is dispersed to avoid excessive static accumulation on the substrate 210. Due to the dispersion and consumption of the static electricity from the C2. Therefore, the second "two, an electrostatic discharge protection 飧 Γ 叮 叮 - - - 弟 弟 弟 弟 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 214 At the time of electricity = the first - guide _ "two electrostatic discharge protection circuit 230 and the dispersion of the static electricity will be first hunted by the first meeting through the first - wire 214 and the bow. After that, the static charge is located at the jump line α of the organic line 214 and the lead 218, and the second electrostatic discharge protection circuit 220 and the second electrostatic discharge protection circuit 23G are electrostatic discharge protection circuit 220 and the second electrostatic discharge " The first-electrostatic discharge first-wire 2H and the lead 218 are effectively destroyed by the discharge. 5 green C1 is free from direct electrostatic discharge 2 and second electrostatic discharge circuit 23 () ^ (four) discharge protection circuit 220 - wire 214 and lead 218 across the j' to effectively avoid the first, & Breaking the discharge 200824127 0610053ITW 19663twf.doc/n
壞。就整體而言’引線218上之靜電荷可藉由第一靜電放 電保護電路22〇鮮二靜電放餘護電路細而分散至第 -導線2M上，而第-導線214上之靜電荷也可藉由第一 靜電放電保護電路22G與第二靜電放電保護電路230而分 散至引線218。因此’本發明之第—靜電放電保護電路22〇 與第二靜電放電保護電路23〇除了能提供更多的靜電散逸 路t之外’亦具有雙向導通之功效。相較於習知技術，本 發明之主動元件陣列基板2GG有較佳的靜電放電防護效果。 請再參考® 3 ’詳細地說，本㈣之第―靜電放電保護 电路220可以包括—第一主動元件222、一第二主動元件 224、一第三主動元件226與一第四主動元件228。上述之 各個主動元件可以與4素單元212之主動元件心（如圖 γ 斤不）一併製作完成，因此並不需要額外之光罩製程。實 ，上，主動元件可以選用薄膜電晶體。具體而言，上述之 ^ 一主動元件222包括-第-源極222s、一第一沒極222d 二一第一閘極222G。其中，第一源極222s與第一閘極222G 二陡連接至第一導線214。此外，第二主動元件224包括一 第=源極224S、一第二汲極224D與一第二閘極224(}。上 述第二源極224S與第二閘極224G電性連接至第一汲極 222D，而第二汲極224D電性連接至引線218。 士 ‘靜龟放龟現象發生於C2處（鄰近顯示區a之一端） 時，靜電放電瞬間所產生的高壓可以將第一主動元件222 而使靜電荷由第一源極222S流至第一汲極222D。 只矛々上靜電荷之能量在開啟第一主動元件222後會被有 200824127 0610053ITW 19663twf.doc/n 效地消耗，a可使靜電放電之破壞力降低4靜 ，很大，便可以藉由第二主動元件224而再 = 放電之破壞力。之後，靜電荷可藉由引線218而門^ 以進-步減緩靜電放電之衝擊。值得注意的是 元件222或第二主動元件224其中—顆主航件若因靜 放電破壞而發生短路時，另—顆未損毁之主動元件仍 常運作，II可使g-靜電放電賴電路22()仍具Bad. As a whole, the static charge on the lead 218 can be finely dispersed to the first wire 2M by the first electrostatic discharge protection circuit 22, and the static charge on the first wire 214 can also be The lead 218 is dispersed by the first electrostatic discharge protection circuit 22G and the second electrostatic discharge protection circuit 230. Therefore, the "electrostatic discharge protection circuit 22" and the second electrostatic discharge protection circuit 23 of the present invention have a double-conducting effect in addition to providing more electrostatic dissipation paths. Compared with the prior art, the active device array substrate 2GG of the present invention has a better electrostatic discharge protection effect. Referring again to the ® 3 ' in detail, the electrostatic discharge protection circuit 220 of the present invention may include a first active component 222, a second active component 224, a third active component 226 and a fourth active component 228. The above-mentioned various active components can be fabricated together with the active component core of the 4-cell unit 212 (as shown in Fig. γ), so that no additional mask process is required. In fact, the active component can be a thin film transistor. Specifically, the above-mentioned active device 222 includes a -first source 222s, a first step 222d, and a first gate 222G. The first source 222s and the first gate 222G are secondarily connected to the first wire 214. In addition, the second active device 224 includes a first source 224S, a second drain 224D, and a second gate 224. The second source 224S and the second gate 224G are electrically connected to the first gate 224G. The pole 222D and the second drain 224D are electrically connected to the lead 218. When the turtle trapping phenomenon occurs at C2 (near one end of the display area a), the high voltage generated by the electrostatic discharge moment can be the first active component 222, the static charge is flown from the first source 222S to the first drain 222D. The energy of the static charge on the spear is consumed by the 200824127 0610053ITW 19663twf.doc/n after the first active component 222 is turned on, a The destructive force of the electrostatic discharge can be reduced by 4, which is large, and the destructive force of the discharge can be re-discharged by the second active element 224. Thereafter, the static charge can be stepped on by the lead 218 to slow down the electrostatic discharge. The impact is notable. When the main voyage of the component 222 or the second active component 224 is short-circuited due to static discharge failure, another undamaged active component still operates normally, and II can make g-electrostatic discharge. Lai circuit 22 () still has
電之功效並不會完全失效。 迷靜 此外’第-靜電放電保護電路22〇中之第三主動 三源極2施、—第三汲極細與—第三間極 226G。上述弟三源極226s與第三閘極226(}電性連 線=18。此外’第四主動元件228包括一第四源極迦、 7 ^四沒極228D與-第四閘極纖。上述第四源極228s 與弟四閘極228G電性連接至第三沒極2勘 228D電性連接至第一導線214。 弟Μ 當靜電放電現象發生於引線训之Ο處時，部分之靜 電會流經第—靜較電賴電路⑽與第二靜電放電保護 電路230 (將在稱後詳述）。流經第一靜電放電保護電路 220之靜電荷可依序開啟第三主動元件挪與第四主動元件 2一28 ’而達到消耗能量之目的。另一方面，靜電荷可透過第 二主動70件226與第四主動元件Μ8而散逸至第一導線 別。同樣地’第三主動元件226或第四主動元件a8其中 顆主動元件靜電破壞而發生短路，帛—靜電放電保 濩包路220仍具有散逸靜電之功效並不會完全失效。 15 200824127 0610053ITW 19663twf.doc/n 本發明之第二靜電放電保護電路23〇對應第一靜電放 电保護電路220而配置於引線218之另一側。其中，第二 靜電放電保護電路230包括—第五主動元件232、一第六主 動元件234、-第七主動元件236與一第八主動元件。 上速之各魅動元件可轉晝素單元212之主動元件ma (如圖2所示）-併製作完成，因此並不需要額外之光 製程。 …詳細地說，第五主動元件232包括一第五源極^^、 一第五沒極232D與-第五閘極232G。上述第五源極232s 與第五閘極232G電性連接至第一導線214。此外，第六主 ，兀件234包括一第六源極234S、一第六汲極234d與一 第六閘極234G。上述第六源極234S與第六閘極234(} ^性 連接至第五汲極232D，而第六汲極234D電性連接至引線 =8。當靜電放電現象發生於第一導線214之C3處（鄰近 第一接墊214a之一端）時，靜電可依序將第五主動元件232 與第六主動το件234開啟。之後，靜電可藉由引線218而 分散開來。 另外，第二靜電放電保護電路23G中之第七主動元件 236包括一第七源極236S、一第七汲極236D與一第七閘極 236G。上述第七源極236S與第七閘極236G電性連接至引 線218。此外，第八主動元件238包括一第八源極238s、 一第八汲極238D與一第八閘極238(3。上述之第八源極 238S與第八閘極238G電性連接至第七汲極236D，而第八 汲極238D電性連接至第一導線214。 200824127 0610053ITW 19663tw£doc/n 當靜電放電現象發生於引線218之C4處時，靜電荷會 分別藉由第一靜電放電保護電路22〇與第二靜電放電保護 電路23G *分散。部分之靜電荷在流經第二靜電放電保護 電路230時，可依序將第七主動元件236與第八主動元件 23\開啟，以達到消耗靜電能量之目的。之後，靜電荷可藉 由第七主動το件236與第八主動元件238而散逸至第一導 線214上，以進一步分散靜電並減緩靜電放電之衝擊。The effect of electricity does not completely fail. The quiescent is in addition to the third active three-source 2 of the first-electrostatic discharge protection circuit 22, the third drain and the third pole 226G. The third source 226s and the third gate 226 are electrically connected to each other. Further, the fourth active device 228 includes a fourth source, a 7^4 pole 228D and a fourth gate fiber. The fourth source 228s and the fourth gate 228G are electrically connected to the third electrode 228D to be electrically connected to the first wire 214. Μ When the electrostatic discharge phenomenon occurs at the lead wire, part of the static electricity It will flow through the first static electricity circuit (10) and the second electrostatic discharge protection circuit 230 (which will be described in detail later). The static charge flowing through the first electrostatic discharge protection circuit 220 can sequentially turn on the third active component. The fourth active component 2 is 28' to achieve the purpose of consuming energy. On the other hand, the static charge can be dissipated to the first wire through the second active 70 member 226 and the fourth active device Μ 8. Similarly, the third active component 226 or the fourth active component a8 wherein the active component is electrostatically broken and short-circuited, and the electrostatic discharge protection package 220 still has the effect of dissipating static electricity and does not completely fail. 15 200824127 0610053ITW 19663twf.doc/n The second electrostatic discharge protection circuit 23〇 corresponds to the first The ESD protection circuit 220 is disposed on the other side of the lead 218. The second ESD protection circuit 230 includes a fifth active component 232, a sixth active component 234, a seventh active component 236, and an eighth active The components of the upper speed can be transferred to the active component ma of the halogen unit 212 (as shown in FIG. 2) - and completed, so that no additional optical process is required. ... In detail, the fifth active component 232 The fifth source electrode 232s and the fifth gate electrode 232G are electrically connected to the first wire 214G. In addition, the sixth main body, The device 234 includes a sixth source 234S, a sixth drain 234d and a sixth gate 234G. The sixth source 234S and the sixth gate 234 are connected to the fifth drain 232D. The sixth drain 234D is electrically connected to the lead wire 8. When the electrostatic discharge phenomenon occurs at the C3 of the first wire 214 (near one end of the first pad 214a), the static electricity can sequentially align the fifth active component 232 with the first The six active τ 228 turns on. After that, the static electricity can be dispersed by the lead 218. The seventh active component 236 of the second electrostatic discharge protection circuit 23G includes a seventh source 236S, a seventh drain 236D and a seventh gate 236G. The seventh source 236S and the seventh gate 236G are electrically The eighth active device 238 includes an eighth source 238s, an eighth drain 238D and an eighth gate 238 (3. The eighth source 238S and the eighth gate 238G are electrically connected. The first drain 238D is electrically connected to the first lead 214. When the electrostatic discharge phenomenon occurs at C4 of the lead 218, the static charge is dispersed by the first electrostatic discharge protection circuit 22 and the second electrostatic discharge protection circuit 23G*, respectively. When a part of the static charge flows through the second electrostatic discharge protection circuit 230, the seventh active element 236 and the eighth active element 23\ can be sequentially turned on to achieve the purpose of consuming static energy. Thereafter, the static charge can be dissipated to the first conductive line 214 by the seventh active member 236 and the eighth active member 238 to further dissipate the static electricity and mitigate the impact of the electrostatic discharge.
為了進一步提升本發明之主動元件陣列基板2〇〇之靜 電放電防_能，第—靜電放電保護電路22()與第二靜電 放電保護電路230也可以應用於第二導線216冑（如圖2 所示）。詳細地說，第二導線216處之第—靜電放電保護 電路220與第二靜電放電保護電路23〇分別配置於引線218 之兩=’且電性連接於第二導、線216與引線218之間。此 外’ 靜電放電保護電路22G與第二靜電放電保護電路 230可藉由引、線218而彼此電性相連。如此一來，第一靜電 放電，護電路22G與第二靜電放電保護電路23()也能有效 避二導線216與引線218之跨線處直接受到靜電放電 之衝擎。 第二實^[ ::貝關與弟一實施例類似’兩者主要不同之處在 於.本貫〜例之第-靜電放電保護電 護電路是電性連接於兩鴻之第—導線之料放私保 s，實施例之主動元件陣列基板之示意 圖’而圖5疋本發明第二實施例之靜電放電保護電路之電 17 200824127 0610053ITW 19663twf.doc/n 路示意圖。請同時參考圖4與圖5,本發明之第—靜命 保護電路，鮮二靜電放電倾電路⑽電 = 相鄰之第一導線214、214,之間。信尸$立沾曰 得於兩 放電保護電路與第二靜電放電健電路㈣分別= 連接於引線218之_，且f _靜電放電賴電路24〇歲 第二靜電放電保護電路250可以藉由引線218而彼ς 相連。 私改In order to further improve the electrostatic discharge protection of the active device array substrate 2 of the present invention, the first electrostatic discharge protection circuit 22 () and the second electrostatic discharge protection circuit 230 can also be applied to the second wire 216 胄 (see FIG. 2). Shown). In detail, the first electrostatic discharge protection circuit 220 and the second electrostatic discharge protection circuit 23 are disposed on the second lead 218 and electrically connected to the second conductive line 216 and the lead 218 respectively. between. Further, the ESD protection circuit 22G and the second ESD protection circuit 230 can be electrically connected to each other by a lead wire 218. In this way, the first electrostatic discharge, the protection circuit 22G and the second electrostatic discharge protection circuit 23() can also effectively avoid the direct discharge of the electrostatic discharge by the intersection of the two wires 216 and the lead 218. The second actual ^ [ :: Bei Guan and the brother of an embodiment similar to the 'the two main difference is that the original ~ the first - the electrostatic discharge protection circuit is electrically connected to the two - the wire of the material Private protection s, schematic diagram of the active device array substrate of the embodiment, and FIG. 5 is a schematic diagram of the electrostatic discharge protection circuit of the second embodiment of the present invention. 200824127 0610053ITW 19663twf.doc/n. Referring to FIG. 4 and FIG. 5 simultaneously, the first static-protection circuit of the present invention, the fresh-electrostatic discharge circuit (10) is electrically connected between the adjacent first wires 214 and 214. The corpse is attached to the two discharge protection circuit and the second electrostatic discharge circuit (4) = connected to the lead 218, respectively, and the f_electrostatic discharge circuit 24 is older than the second electrostatic discharge protection circuit 250 can be leaded 218 and connected to each other. Private reform
这裡要特別既明的是’下一組第一靜電放電保護 240’（如目5所示）及第二靜電放電保護電路25〇，之間 相對位置會與第-靜電放電保護電路施與第二靜電放命 保護電路250之間的相對位置相反。詳細地說，第: 放電保護電路240包括一第—主動元件242、一第二主動元 件244與-第三主動元件246。其中，第一主動元件撕= 括一第一源極242S、一第一汲極242D與一第一閘極 242G。上述第一源極242S與第一閘極242(3電性連接 -導線川。此外，第二主動元件244包括4= 244S、一第二汲極244D與一第二閘極244〇。上述第二源 極244S與第二閘極244G電性連接至第一汲極242D，而第 二没極244D電性連接至引線218。 另外二本發明之第三主動元件246包括一第三源極 246S、一第三汲極246D與一第三閘極246G。上述第三汲 極246D龟〖生連接至弟一閘極244G，而第三源極246S與第 三閘極246G電性連接至下一條第一導線214,。 具體而言，當靜電放電現象發生於第一導線214之C6 18 200824127 0610053ITW l9663twf.doc/n 顯示區A之一端）時，靜電放電瞬間之高壓可依 Πί—主動元件242與第二主動元件244開啟。之後， 可進-步由第二主動元件244而分散至引線218 亡化裡要特別說明的是，當靜電放電現象發生於下一條 弟一導線214,之C8處時，靜電放電瞬間之高壓可依序將第 了主動元=246與第二主動元件244開啟。之後，靜電荷 可進一=藉由第二主動元件244而分散至引線218上。 • 值得庄意的是，當靜電放電現象發生於第一導線214 之C7處（鄰近第一接塾214a之一端）時，靜電荷可藉由 上一組之第一靜電放電保護電路24〇，，而將靜電荷分散。另 =，當+靜電放電現象發生於第一導線214，之C9處時，靜電 荷可藉由下一組第一靜電放電保護電路24〇，而分散。 —另一方面，本發明之第二靜電放電保護電路250對應 第一靜電放電保護電路240而配置於引線218之一侧，且 第一靜電放電保護電路250電性連接於兩相鄰之第一導線 2~14與214’之間。其中，第二靜電放電保護電路25()包括一 第四主動兀件252、一第五主動元件254與一第六主動元件 256。第四主動兀件252包括一第四源極252S、一第四汲極 252D與一第四閘極252G。上述第四汲極252D電性連接至 第-導線214。此外，第五主動元件254包括—第五源極 254S、一第五汲極254D與一第五閘極254G。上述第四源 極252S與第四閘極252G電性連接至第五汲極254d，而第 五源極254S與第五閘極254G電性連接至引線218。 另外，第六主動元件256包括一第六源極256S、一第 200824127 0610053ITW 19663twf.doc/n 六Z，與-第六閑極256G。上述第六源極2娜與第 電性連接至第五沒極_，而第六沒極256〇 =22,第—導線Μ。具體而言，當靜電放電 一杜)；、、、218之C1G處時，靜電荷可藉由第五主動 1 4而分別將靜電荷分散至第四主動元件况與第六 主^件256。之後’再透過第四主動元件况與第六主動Here, it is particularly clear that the 'next set of first electrostatic discharge protection 240' (as shown in item 5) and the second electrostatic discharge protection circuit 25 are, and the relative position between them is applied to the first electrostatic discharge protection circuit. The relative positions between the second electrostatic discharge protection circuits 250 are opposite. In detail, the first: the discharge protection circuit 240 includes a first active element 242, a second active element 244 and a third active element 246. The first active device tears include a first source 242S, a first drain 242D and a first gate 242G. The first source 242S and the first gate 242 are electrically connected to each other. The second active device 244 includes 4=244S, a second drain 244D and a second gate 244〇. The second source 244S and the second gate 244G are electrically connected to the first drain 242D, and the second gate 244D is electrically connected to the lead 218. The second active element 246 of the present invention includes a third source 246S. a third drain 246D and a third gate 246G. The third drain 246D turtle is connected to the first gate 244G, and the third source 246S and the third gate 246G are electrically connected to the next The first wire 214. Specifically, when the electrostatic discharge phenomenon occurs at the C6 18 200824127 0610053ITW l9663twf.doc/n display area A of the first wire 214, the high voltage of the electrostatic discharge can be dependent on the active component 242. The second active component 244 is turned on. After that, it can be further dispersed by the second active component 244 to the lead 218. In particular, when the electrostatic discharge phenomenon occurs at the C8 of the next conductor 214, the high voltage of the electrostatic discharge can be instantaneously The first active element=246 and the second active element 244 are sequentially turned on. Thereafter, the static charge can be further dispersed to the lead 218 by the second active element 244. • It is worthwhile to note that when the electrostatic discharge phenomenon occurs at C7 of the first wire 214 (near one end of the first port 214a), the static charge can be passed through the first set of first electrostatic discharge protection circuits 24, And the static charge is dispersed. In addition, when the +electrostatic discharge phenomenon occurs at the C9 of the first wire 214, the electrostatic charge can be dispersed by the next group of first electrostatic discharge protection circuits 24. On the other hand, the second electrostatic discharge protection circuit 250 of the present invention is disposed on one side of the lead 218 corresponding to the first electrostatic discharge protection circuit 240, and the first electrostatic discharge protection circuit 250 is electrically connected to the first of the two adjacent ones. Between wires 2~14 and 214'. The second electrostatic discharge protection circuit 25() includes a fourth active element 252, a fifth active element 254 and a sixth active element 256. The fourth active element 252 includes a fourth source 252S, a fourth drain 252D and a fourth gate 252G. The fourth drain 252D is electrically connected to the first wire 214. In addition, the fifth active component 254 includes a fifth source 254S, a fifth drain 254D, and a fifth gate 254G. The fourth source 252S and the fourth gate 252G are electrically connected to the fifth drain 254d, and the fifth source 254S and the fifth gate 254G are electrically connected to the lead 218. In addition, the sixth active component 256 includes a sixth source 256S, a 200824127 0610053ITW 19663twf.doc/n six Z, and a sixth idle pole 256G. The sixth source 2 is electrically connected to the fifth poleless _, and the sixth pole is 256 〇 = 22, and the first conductor is Μ. Specifically, when the electrostatic discharge is at C1G of the ?, , 218, the static charge can be dispersed to the fourth active element and the sixth main element 256 by the fifth active 14 respectively. After the 're-transmission of the fourth active component condition and the sixth initiative
儿件56之傳遞，而將靜電荷分別分散至第一導線加與 下一條第一導線214,。 由於本發明之第-靜電放電賴電路與第二靜電 放電保€電路25G連接於兩㈣之第—導線214、214，之 間’以使靜電荷能妓？的靜電散逸路徑，進而能有效避 免主動70件P㈣基板2GGa上的元件遭受靜電放電破壞。特 別的是，第-靜電放電保護電路中料—顆主動元件 因靜電破壞而有短路的現象，另—顆未受破壞之主動元件 仍可正常運作。第-靜電放電賴電路24G並不會完全失 效。本發明之第二靜電放電保護電路25q也具有相同的優 點0 當然，所屬技術領域中具有通常知識者應知第一靜電 放電，護電路24G與第二靜電放電賴電路25()也可以配 置於第—導線216處（如圖4所示），以進一步提升主動 元件陣列基板200a之靜電放電保護之功效。 弟二實施例與弟一實施例類似，兩者主要不同之虛在 於··本實施例中第一主動元件之第一源極可以延伸並跨過 20 200824127 0610053ITW 19663twf.doc/n 第一導線以形成-第-跨線部。圖6是本發明第三實 之跨線5之示意圖。請參考圖6，本發明之第—主動元件 242之第一源極242S延伸並跨過第一導線214，以形 第一跨線部D1。 、=裡要特別說明的是，在本實施例中是以第一導線 作為掃描線，而主動元件為底閘極（b〇tt〇mgate)之結構， 來作說，。掃描線為—般通稱之第—金屬層（咖如了）所 構成’、第一源極242S為一般通稱之第二金屬層（metai2) 所構成。實務上，第—跨線部m可以藉由第二金屬層 二源極242S)延伸至第一金屬層（第一導線214):方= 形成、。當#然，所屬技術領域中具有通常知識者應知若主動 70件為頂閘極（top gate)結構，則第—跨線部D1可 2= 屬層（第一源極242S)延伸至第—金屬層（第二 導線214)之下方而形成。 值得注意的是，第一跨線部D1很容易誘使靜電荷在此 處放電，進而可達到消耗靜電能量之目的。雖鈇， 線部m中第-導線214與第一源極2似復可能因 ，而有短路的現象。但第-源極242S本來就需電 第士線214 (掃描線），因此第一跨線部以巾第一 214與第-源極期之短路現象並不會對主動 列美 板造成不良的影響。 土 為了進步提升线元件陣祕板之靜電放電保護功 效’ ^三主動元件246之第三源極246S可以延伸並跨過下 一條第一導線214,，以形成一第二跨線部D2。本發明之第 21 200824127 06I0053ITW 19663twf.doc/n 二跨線部D2同樣具有誘發靜電放電的功效，進而可 消耗靜電能量之目的。The transfer of the member 56 causes the static charge to be dispersed to the first wire and the next first wire 214, respectively. Since the first electrostatic discharge circuit of the present invention and the second electrostatic discharge protection circuit 25G are connected between the two (four) first conductors 214, 214, so that the electrostatic charge can be clamped? The electrostatic dissipating path can effectively avoid the electrostatic discharge damage of the components on the active 70 piece P (four) substrate 2GGa. In particular, in the first-electrostatic discharge protection circuit, the active element of the material-electrode is short-circuited due to electrostatic damage, and the other un-destroyed active element can still operate normally. The first-electrostatic discharge circuit 24G does not completely fail. The second electrostatic discharge protection circuit 25q of the present invention also has the same advantages. Of course, those skilled in the art should know that the first electrostatic discharge, the protection circuit 24G and the second electrostatic discharge circuit 25 () can also be configured. The first wire 216 (shown in FIG. 4) is used to further enhance the electrostatic discharge protection of the active device array substrate 200a. The second embodiment is similar to the first embodiment. The main difference between the two is that the first source of the first active component can be extended and spanned by 20 200824127 0610053ITW 19663twf.doc/n Form - the first - crossing line. Figure 6 is a schematic illustration of a third actual span 5 of the present invention. Referring to FIG. 6, the first source 242S of the first active device 242 of the present invention extends across the first wire 214 to form a first jumper portion D1. Specifically, in the present embodiment, in the embodiment, the first wire is used as the scanning line, and the active element is the bottom gate (b〇tt〇mgate) structure. The scanning line is generally referred to as a metal layer (which is composed of a metal layer), and the first source electrode 242S is generally a second metal layer (metai2). In practice, the first-over-line portion m can be extended to the first metal layer (first wire 214) by the second metal layer two source 242S): square = formed. When it is true, those skilled in the art should know that if the active 70 is a top gate structure, the first crossover portion D1 can be 2 = the genus layer (the first source 242S) extends to the first — formed under the metal layer (second wire 214). It is worth noting that the first jumper portion D1 easily induces electrostatic charges to be discharged there, thereby achieving the purpose of consuming static energy. Although the first conductor 214 in the line portion m may be similar to the first source 2, there is a short circuit. However, the first source 242S needs to be powered by the taxi line 214 (scanning line). Therefore, the short circuit between the first 214 and the first source of the first jumper does not cause adverse effects on the active slab. influences. In order to improve the electrostatic discharge protection function of the line element board, the third source 246S of the three active elements 246 can extend and span the next first wire 214 to form a second jumper portion D2. The 21st 200824127 06I0053ITW 19663twf.doc/n second span portion D2 also has the effect of inducing electrostatic discharge, thereby consuming static energy.
圖7是本發明第三實施例之另一跨線部之示意圖。社 =::這裡要說明的是，本發明之跨線部也可以配置： 線處。本實施财第二導線216為資科線，料 、’為-般補之第二金屬（matal 2)所構成。因此，本私 =第,跨線部03可以由第二導線216 (第二 J 過弟一閘極242G (第一金屬層）伸忐二 ：；極1；^^導線216，（第二金屬層）也第ί = ^部分而形成第‘二 分別::i二明之，動元件陣列基板於引線之兩側 路，而使引線橫跨'第—電：蔓處，二^靜電放電保護電 =二靜電放電保護電㈡，路 放電保護電路，才有機會流經引線第二靜電 可以有效避免！丨線横跨第—導¥線處。這樣 =本發明之第4二衝 保濩電路可以連接於兩相鄰之第—1:路與弟二靜電放電 放電保護電路與第二靜電放電保讜ί線之間’且第—靜電 相連’進而可有效增加主動元件陣透過引線而彼此 徑。由於本發明之第一二二J基板上靜電散逸之路 靜電於此處放電’進“線，以主動誘發 静电爲置之目的，且並 22 200824127 0610053ITW 19663twf.doc/n 不會對主動元件陣列基板造成不良之影響。 雖然本發明已以較佳實施例揭露如上，然其並非用、 限定本發明，任何所屬技術領域中具有通常知識者，以 脫離本發明之精神和範圍内，當可作些許之更動與潤飾不 因此本發明之保護範圍當視後附之申請專利範圍 為準。 心百 【圖式簡單說明】Figure 7 is a schematic illustration of another jumper portion of a third embodiment of the present invention. Society =:: It should be noted that the crossover part of the present invention can also be configured: line. The second wire 216 of the present implementation is a subsidiary line, and the material is made of a second metal (matal 2). Therefore, the private=first, the over-line portion 03 can be extended by the second wire 216 (the second J-pass-gate 242G (first metal layer); the pole 1; the ^^ wire 216, (the second metal Layer) also the ί = ^ part and form the first 'two respectively:: i two Ming, the moving element array substrate on both sides of the lead, and the lead across the 'first-electric: vine, two ^ electrostatic discharge protection = two electrostatic discharge protection (2), the road discharge protection circuit, the opportunity to flow through the lead second electrostatic can be effectively avoided! The line crosses the first - guide line. This = the fourth rush protection circuit of the present invention can Connected between the two adjacent first -1: road and the second electrostatic discharge protection circuit and the second electrostatic discharge protection line 'and the first - electrostatic connection' can effectively increase the active element array through the lead and each other. Since the static electricity dissipating path on the first two or two J substrates of the present invention discharges into the line here, the purpose of actively inducing static electricity is set, and 22 200824127 0610053ITW 19663twf.doc/n does not affect the active device array. The substrate causes adverse effects. Although the invention has been better The embodiments are disclosed above, but are not intended to limit the scope of the invention, and the scope of the invention is intended to be Depending on the scope of the patent application attached, the scope of the application is as follows.
圖1是習知主動元件陣列基板之示意圖。 圖2是本發明第一實施例之主動元件陣列基板之示咅 r\ 一土圖3是本發明第一實施例之靜電放電保護電路之電路 不思圖。 圖4是本發明第二實施例之主動元件陣列基板之示意 一圖5是本發明第二實施例之靜電放電保護電路 示意圖。 圖6是本發明第三實施例之跨線部之示意圖。 圖7是本發明第三實施例之另一跨線部之示意圖。 【主要元件符號說明】 〜 110、200、200a :主動元件陣列基板 112 ' 210 :基板 U4 :掃描線 116 :資料線 H8、212:晝素單元 23 200824127 0610053ITW 19663twf.doc/n 120 :引線 122 :靜電放電保護元件 124 :接墊 212a :主動元件 212b :晝素電極 214、214’、214” ：第一導線 216、216’ ：第二導線 214a:第一接墊 216a:第二接墊 218 :引線 220、240、240’、240” ：第一靜電放電保護電路 230、250、250’、250” ：第二靜電放電保護電路 222、242 ··第一主動元件 222S、242S :第一源極 222D、242D ··第一汲極 222G、242G :第一閘極 ⑩ 224、244 :第二主動元件 224S、244S :第二源極 224D、244D :第二汲極 224G、244G :第二閘極 226、246 :第三主動元件 226S、246S :第三源極 226D、246D :第三汲極 226G、246G :第三閘極 24 200824127 0610053ITW 19663twf.doc/n 228、252 :第四主動元件 228S、252S :第四源極 228D、252D :第四汲極 228G、252G :第四閘極 232、254 :第五主動元件 232S、254S :第五源極 232D、254D :第五汲極 232G、254G :第五閘極 234、256 ··第六主動元件 234S、256S :第六源極 234D、256D :第六汲極 234G、256G ··第六閘極 236 :第七主動元件 236S :第七源極 236D :第七汲極 236G :第七閘極 238 :第八主動元件 238S :第八源極 238D :第八汲極 238G :第八閘極 A ·顯不區 B :周邊線路區 C、C1 :跨線處 C2、C3、C4、C5、C6、C7、C8、C9、C10 :靜 25 200824127 ucjiuu^iii'W 19663twf.doc/n 電發生點 D1 :第一跨線部 D2 :第二跨線部 D3 :第三跨線部 D4 :第四跨線部1 is a schematic view of a conventional active device array substrate. 2 is a diagram showing an active device array substrate according to a first embodiment of the present invention. FIG. 3 is a circuit diagram of an electrostatic discharge protection circuit according to a first embodiment of the present invention. 4 is a schematic view of an active device array substrate according to a second embodiment of the present invention. FIG. 5 is a schematic view showing an electrostatic discharge protection circuit according to a second embodiment of the present invention. Figure 6 is a schematic view of a crossover portion of a third embodiment of the present invention. Figure 7 is a schematic illustration of another jumper portion of a third embodiment of the present invention. [Description of main component symbols] ~ 110, 200, 200a: Active device array substrate 112' 210: Substrate U4: Scanning line 116: Data line H8, 212: Alias cell 23 200824127 0610053ITW 19663twf.doc/n 120: Lead 122: Electrostatic discharge protection element 124: pad 212a: active element 212b: halogen electrode 214, 214', 214": first wire 216, 216': second wire 214a: first pad 216a: second pad 218: Leads 220, 240, 240', 240": first electrostatic discharge protection circuit 230, 250, 250', 250": second electrostatic discharge protection circuit 222, 242 · first active element 222S, 242S: first source 222D, 242D ··first drain 222G, 242G: first gate 10 224, 244: second active element 224S, 244S: second source 224D, 244D: second drain 224G, 244G: second gate 226, 246: third active component 226S, 246S: third source 226D, 246D: third drain 226G, 246G: third gate 24 200824127 0610053ITW 19663twf.doc / n 228, 252: fourth active component 228S, 252S: fourth source 228D, 252D: fourth drain 228G, 252G: fourth gate 23 2, 254: fifth active component 232S, 254S: fifth source 232D, 254D: fifth drain 232G, 254G: fifth gate 234, 256 · sixth active component 234S, 256S: sixth source 234D 256D: sixth drain 234G, 256G · sixth gate 236: seventh active component 236S: seventh source 236D: seventh drain 236G: seventh gate 238: eighth active component 238S: eighth Source 238D: eighth drain 238G: eighth gate A · display area B: peripheral line area C, C1: crossover line C2, C3, C4, C5, C6, C7, C8, C9, C10: static 25 200824127 ucjiuu^iii'W 19663twf.doc/n Electrical occurrence point D1: first over-line part D2: second over-line part D3: third over-line part D4: fourth over-line part