TW200819928A - Lithography system, development apparatus and development method using the same - Google Patents

Lithography system, development apparatus and development method using the same Download PDF

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Publication number
TW200819928A
TW200819928A TW095138036A TW95138036A TW200819928A TW 200819928 A TW200819928 A TW 200819928A TW 095138036 A TW095138036 A TW 095138036A TW 95138036 A TW95138036 A TW 95138036A TW 200819928 A TW200819928 A TW 200819928A
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fluid
substrate
developing device
developing
sub
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TW095138036A
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Chinese (zh)
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TWI367403B (en
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Ming-Shan Wang
Cheng-Chu Tseng
Ya-Fu Cheng
Ming-Hui Lin
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Au Optronics Corp
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Priority to TW095138036A priority Critical patent/TWI367403B/en
Priority to KR1020070043401A priority patent/KR100876515B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Disclosed is a development apparatus which can pre-rinse the pre-developed photo-resist, thereby preventing excessive development for the pre-developed photo-resist and insufficient development for the last-developed photo-resist. The development apparatus improves whole critical dimension substantially uniformity and improves the yield of the developed process of the development apparatus over the processing substrate.

Description

200819928 , 九、發明說明： 【發明所屬之技術領域】 本發明係有關微影製程，更特別有關於顯影步驟所用 之裝置。 【先前技術】 在製造電子元件時，微影製程是最重要的一環。如何 將人眼所能辨識之設計圖（layout)，複製到具有微米奈米 等級的線路之元件上，需要仰賴微影製程的好壞。微影製 — 程一般包括以下幾個步驟：基板清洗、塗佈光阻、軟烤（soft bake)、曝光、顯影、進行後續製程如硬烤（hard bake)、離 子佈植、離子處理或蝕刻、去除光阻。為了得到更好的微 影效果，習知技藝改良光阻配方，改良步進機的曝光流 程，甚至選擇不同的曝光光源。 大部份的改良仍著重於光阻組成或曝光前後的步 驟，而忽略了顯影步驟對元件帶來的影響。舉例來說，第 1A-1D圖係習知技藝常見之顯影方法。首先如第1A圖所 _ 示，以平台（未圖示）支撐基板10,其上表面為一層已曝光 之光阻11。在基板10上方為顯影液注入器12，其以固定 速率由基板10之右端往左端移動，並注入顯影液至基板 10上方形成顯影液層14，如第1B圖所示。 值得注意的是，由於顯影液注入器12自基板10之右 端移動至左端需要一段時間，因此基板10兩端顯影的時 間不一樣。基板10越大，則基板10兩端顯影的時間差越 大。基板10右端的光阻可能已產生過顯影的現象，而基 板10左端的光阻仍顯影不足。這將造成基板10的兩端關200819928, IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to lithography processes, and more particularly to devices for use in development steps. [Prior Art] The lithography process is the most important part in the manufacture of electronic components. How to copy the layout that can be recognized by the human eye to the components of the line with micron nanometer level depends on the quality of the lithography process. The lithography process generally involves the following steps: substrate cleaning, coating photoresist, soft bake, exposure, development, subsequent processes such as hard bake, ion implantation, ion treatment or etching. Remove the photoresist. In order to obtain better lithography effects, conventional techniques improve the photoresist formulation, improve the exposure process of the stepper, and even select different exposure sources. Most of the improvements still focus on the composition of the photoresist or the steps before and after the exposure, ignoring the effects of the development step on the components. For example, the 1A-1D diagram is a development method common to conventional techniques. First, as shown in Fig. 1A, the substrate 10 is supported by a platform (not shown) whose upper surface is a layer of exposed photoresist 11. Above the substrate 10 is a developer injector 12 which is moved from the right end to the left end of the substrate 10 at a fixed rate, and a developing solution is injected onto the substrate 10 to form a developer layer 14, as shown in Fig. 1B. It is to be noted that since it takes a certain period of time for the developer injector 12 to move from the right end to the left end of the substrate 10, the development time of the both ends of the substrate 10 is different. The larger the substrate 10, the greater the time difference between development of the substrate 10 at both ends. The photoresist at the right end of the substrate 10 may have been overdeveloped, and the photoresist at the left end of the substrate 10 is still underdeveloped. This will cause the two ends of the substrate 10 to be closed.

Client’s Docket No. :AU0604018 TT^ Docket No:0632-A50732/fmal/hsuhiiche 5 .200819928 '， 鍵尺寸（critical dimension，CD)不一致，降低整體製程良 率。而這部份損失無法以改良曝光製程來彌補。 接著如第1C圖所示，由去離子水注入器15將水注入 至基板10上，同時旋轉基板10使水擴散至外緣。可以得 知，水由基板10之中央擴散至外緣需要一段時間，造成 基板10中央較早沖洗而顯影不足，外緣較晚沖洗而過顯 影。此步驟一樣使基板10之中央及外緣關鍵尺寸不一 致，也降低整體製程良率。 最後，如第1D圖所示，移開去離子水注入器15以旋 ⑩ 轉（spin on)整塊基板10方式去除基板10上之水份，留下 圖案化之光阻16。由於製造一道線路結構於該基板10 上，通常需要一道以上的微影製程，因此，第1B圖及第 1C圖步驟造成關鍵尺寸不一致的問題將不斷累積。 因此，要如何改善顯影步驟所造成於基板上之關鍵尺 寸不一致的問題，以使得基板上之關鍵尺寸較為一致，即 為需要努力及改善的目標。 _ 【發明内容】 本發明之一目的在於提供一種顯影裝置，包括平台， 用以支撐基板，且基板表面具有已曝光之光阻層；一流體 注入器，係相對於基板移動，且於第一時間注入顯影液至 基板上以顯影已曝光之光阻層，並於第二時間注入流體至 基板上以清洗該基板。 本發明之另一目的在於提供一種微影機台，包括上述 之顯影裝置，及一曝光裝置。 本發明之另一目的在於提供一種顯影裝置之顯影方Client’s Docket No. : AU0604018 TT^ Docket No:0632-A50732/fmal/hsuhiiche 5 .200819928 ', the critical dimension (CD) is inconsistent, reducing the overall process yield. This part of the loss cannot be compensated for by the improved exposure process. Next, as shown in Fig. 1C, water is injected onto the substrate 10 by the deionized water injector 15, while rotating the substrate 10 to diffuse water to the outer edge. It can be seen that it takes a period of time for water to diffuse from the center of the substrate 10 to the outer edge, causing the center of the substrate 10 to be rinsed earlier and underdeveloped, and the outer edge is rinsed late to develop. This step also causes the critical dimensions of the center and outer edges of the substrate 10 to be inconsistent and also reduces the overall process yield. Finally, as shown in Fig. 1D, the deionized water injector 15 is removed to spin the entire substrate 10 to remove moisture from the substrate 10, leaving a patterned photoresist 16. Since a circuit structure is fabricated on the substrate 10, more than one lithography process is usually required. Therefore, the problems of inconsistent key dimensions caused by the steps 1B and 1C will continue to accumulate. Therefore, how to improve the key dimension inconsistency on the substrate caused by the development step so that the critical dimensions on the substrate are relatively uniform is a goal that requires effort and improvement. SUMMARY OF THE INVENTION An object of the present invention is to provide a developing device including a platform for supporting a substrate, and the surface of the substrate has an exposed photoresist layer; a fluid injector is moved relative to the substrate, and is first The developer is time-injected onto the substrate to develop the exposed photoresist layer, and a fluid is injected onto the substrate at a second time to clean the substrate. Another object of the present invention is to provide a lithography machine comprising the above developing device and an exposure device. Another object of the present invention is to provide a developing device for a developing device

Clienfs Docket No.: AU0604018 TT5s Docket No:0632-A50732/fmal/hsuhuche 6 200819928 法，該顯影裝置包括平台用以支撐基板，基板表面具有已 曝光之光阻層及流體注入器，係相對於基板移動，該方法 包括於第一時間注入顯影液至基板上以顯影已曝光之光 阻層以及於第二時間注入流體至基板上以清洗基板。 為讓本發明之上述目的、特徵和優點能更明顯易懂， 下文特舉較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 在本發明實施例中，如第2A圖所示，首先以平台1 _ 固定基板20。基板20上方有已曝光之光阻21，下方可設 置回收槽3以回收未曝光之光阻或顯影過程中使用的有 機溶劑。在已曝光之光阻21上方即本發明之流體注入器 20 〇 第2B圖所示係第2A圖之俯視圖。基板20其材質包 含透光材質（如··玻璃、石英或類似之材質）、不透光材質 (如：矽、陶瓷或類似之材質）、或可撓性材質（如：塑膠、 橡膠、聚酯類、聚烯類、聚醯類或類似之材質或上述之混 合），本發明之實施例係以玻璃基板為範例。再者，基板 _ 20表面上之結構可為電路結構或濾光片結構之任何一 層。基板20之表面上為已曝光之光阻21，且基板20上 為一流體注入器22，相對於基板20移動，以注入一顯影 液至基板20上以顯影已曝光之光阻21。由基板20之第 一端開始注入顯影液，以固定速率移動流體注入器至基板 20之第二端。然而，本發明之實施例係以流體注入器22 從右端移動至左端為實施範例，亦可由左端移動至右端， 或從其它端移動至另一端，並不在此限。接著如第2C圖Clienfs Docket No.: AU0604018 TT5s Docket No: 0632-A50732/fmal/hsuhuche 6 200819928, the developing device includes a platform for supporting a substrate having an exposed photoresist layer and a fluid injector on the surface of the substrate, moving relative to the substrate The method includes injecting a developer onto the substrate at a first time to develop the exposed photoresist layer and injecting a fluid onto the substrate at a second time to clean the substrate. The above described objects, features, and advantages of the present invention will become more apparent from the aspects of the embodiments of the invention. As shown in Fig. 2A, the substrate 20 is first fixed with the platform 1 _. Above the substrate 20 is an exposed photoresist 21, and a recovery tank 3 may be provided below to recover the unexposed photoresist or the organic solvent used in the development process. Above the exposed photoresist 21, the fluid injector 20 of the present invention is shown in Fig. 2B as a plan view of Fig. 2A. The substrate 20 is made of a light-transmitting material (such as glass, quartz or the like), an opaque material (such as enamel, ceramic or the like), or a flexible material (such as plastic, rubber, or poly). Examples of the present invention are glass substrates as an example of esters, polyolefins, polyfluorenes or the like or a mixture thereof. Furthermore, the structure on the surface of the substrate _ 20 can be any one of a circuit structure or a filter structure. The surface of the substrate 20 is an exposed photoresist 21, and the substrate 20 is a fluid injector 22 which is moved relative to the substrate 20 to inject a developing solution onto the substrate 20 to develop the exposed photoresist 21. The developer is injected from the first end of the substrate 20 to move the fluid injector to the second end of the substrate 20 at a fixed rate. However, the embodiment of the present invention is an embodiment in which the fluid injector 22 is moved from the right end to the left end, and may be moved from the left end to the right end or from the other end to the other end, and is not limited thereto. Then as shown in Figure 2C

Clienfs Docket No.:AU0604018 TT^s Docket No:0632-A50732/fmal/hsuhuche 7 200819928 入^^板20上均勾塗布顯影液層24。流體注入器 度，欲而，二= 基板20之角度’較佳地’實質上為45 尤I且之顯影液，杈佳地，為偏鹼性之 阻之顯影液，較佳地，為有機溶劑 一 ^ 或其它溶劑、或上述之混合)。1 ?本、本、丙酮 詳细S釋：續製程之前’以下先說明流體注入器22之Clienfs Docket No.: AU0604018 TT^s Docket No: 0632-A50732/fmal/hsuhuche 7 200819928 The developer layer 24 is hook-coated on the board 20. Fluid injector degree, if desired, two = the angle of the substrate 20 'preferably' is substantially 45, and the developing solution, preferably, the alkaline solution, preferably organic Solvent - or other solvent, or a mixture of the above). 1 ? 本 本 本, acetone, detailed S release: before the continuous process, the following describes the fluid injector 22

出管3Γ、_ ^ 3Α圖所示’流體注入器22具有數個輸 出吕31輪入管32Α、32Β連接至輸出管μ、 制人管Μ.與輸出管31之連接處:用 以才工制机體庄入器22注入顯影液或流體。The outlet pipe 3Γ, _ ^ 3 Α ' 'The fluid injector 22 has several outputs Lu 31 wheel inlet 32 Α, 32 Β connected to the output tube μ, the connection between the tube 输出 and the output tube 31: for the production system The body molder 22 injects a developer or a fluid.

存槽35Α，而輸入管规連接至;體儲J ^之4弟在^圖之設計外，流體注入器22亦可為第3Β 0之=计。在弟3Β圖中，流體注入器22分為兩個子流體 = 咖，各自連接至顯影液儲存槽3认及流 體庄入乜35Β，以分別提供顯影液及流體至基板上。雖缺 第3Β圖中之子流體注入器22Α及22Β為交替排列，但^ 可如第3C圖所示，子流體注入器22Α及22Β為並排，或 者二者排列方式之混合搭配。 值得注意的是，若採用第3Α圖之流體注入器22，最 好在進行第2D圖之步驟前，先將流體注入器22移開至 基板之外，進行一預注入步驟將輸出管31殘餘之^二液 洗去，以避免後續流體受到顯影液污染。 ρ 接著如第2D圖所示，流體注入器22注入流體至基板 20上形成流體層25清洗基板2〇，並與注入顯影液時一 樣，自基板20之右端以固定速率移動至基板2〇之左端。The storage tank is 35 Α, and the input pipe gauge is connected to; the body reservoir J ^ 4 is outside the design of the figure, and the fluid injector 22 can also be the third Β 0. In the drawing, the fluid injector 22 is divided into two sub-fluids = coffee, each connected to the developer storage tank 3 to recognize the fluid enthalpy 35 Β to provide the developer and fluid to the substrate, respectively. Although the sub-fluid injectors 22Α and 22Β in the third diagram are alternately arranged, as shown in Fig. 3C, the sub-fluid injectors 22Α and 22Β are arranged side by side, or a mixture of the two. It should be noted that, if the fluid injector 22 of FIG. 3 is used, it is preferable to remove the fluid injector 22 to the outside of the substrate before performing the step of FIG. 2D, and perform a pre-injection step to remnant the output tube 31. The two liquids are washed away to prevent subsequent fluid from being contaminated by the developer. ρ Next, as shown in FIG. 2D, the fluid injector 22 injects a fluid onto the substrate 20 to form a fluid layer 25 to clean the substrate 2, and moves to the substrate 2 at a fixed rate from the right end of the substrate 20 as in the case of injecting the developer. Left end.

Client’s Docket N〇.:AU0604018 TT’s Docket No:0632-A50732/final/hsuhuche s 200819928 本技藝人士自可視基板大小、要顯影之膜層別（如：金屬 層包含掃描線、資料線、共通電極、黑色矩陣、像素電極 或電路結構、介電層包含絕緣層、截刻終止層或保護層、 主動層包括通道層或歐姆接觸層、有機層包含間隙子、配 向控制結構或覆蓋層）、光阻種類等參數來調整移動速 率，一般而言，流體注入器移動速度係實質上等於 80mm/sec，然而，本發明之實施例並不限於此，並且，流 體注入器於第一時間之移動速度可實質上相等或不相等 於流體注入器於第二時間之移動速度，換句話說，流體流 ⑩ 體注入器於第一時間，從基板之一端移動至另一端所需之 時間可實質上相等或不相等於流體流體注入器於第二時 間，從基板之一端移動至另一端所需之時間，應需視上面 所述之理由及設計來變動之。而注入流體的時間與注入顯 影液的時間可相同或不同，端視製程需要而定。流體注入 器22注入顯影液至基板20之角度，係實質上小於或等於 90度，較佳地，實質上等於45度，然而，並不在此限。 一般常見之流體，包含水、空氣、或有機溶劑，或上述之 φ 組合。若採用水與空氣之組合作為流體，則空氣之體積比 例，較佳地，實質上大於水之體積比例。若採用空氣作為 流體，則不會形成第2D圖所示之流體層25。此步驟為本 發明之關鍵步驟，由於先顯影之部份先清洗，可解決習知 技藝中不同部份其關鍵尺寸不同的問題。 最後進行第2E圖所示之旋乾步驟，去除基板22所殘 留之流體並留下圖案化之光阻26以完成整個顯影製程。 在此必需說明的是，若第2D圖之清洗步驟採用空氣或易 乾之有機溶劑作為流體，則不太需要進行此旋乾步驟。Client's Docket N〇.: AU0604018 TT's Docket No:0632-A50732/final/hsuhuche s 200819928 The skilled person is self-visible substrate size, film layer to be developed (eg metal layer containing scan lines, data lines, common electrodes, black) a matrix, a pixel electrode or a circuit structure, a dielectric layer comprising an insulating layer, a dicing stop layer or a protective layer, an active layer comprising a channel layer or an ohmic contact layer, an organic layer comprising a spacer, an alignment control structure or a cover layer), a photoresist species The parameters are adjusted to adjust the moving rate. Generally, the fluid injector moving speed is substantially equal to 80 mm/sec. However, embodiments of the present invention are not limited thereto, and the moving speed of the fluid injector at the first time may be substantially Equally or unequal to the speed of movement of the fluid injector at the second time, in other words, the time required for the fluid stream 10 to move from one end of the substrate to the other at a first time may be substantially equal or not The time required for the fluid fluid injector to move from one end of the substrate to the other at a second time should be based on the reasons stated above. Designed to change it. The time for injecting the fluid may be the same as or different from the time required to inject the developer, depending on the process requirements. The angle at which the fluid injector 22 injects the developer into the substrate 20 is substantially less than or equal to 90 degrees, preferably substantially equal to 45 degrees, however, not limited thereto. Commonly used fluids, including water, air, or organic solvents, or combinations of the above. If a combination of water and air is used as the fluid, the volume ratio of air is preferably substantially greater than the volume ratio of water. If air is used as the fluid, the fluid layer 25 shown in Fig. 2D is not formed. This step is a critical step in the present invention, and since the first developed portion is first cleaned, it is possible to solve the problem of different key dimensions of different parts of the conventional art. Finally, the spin-drying step shown in Fig. 2E is performed to remove the residual liquid from the substrate 22 and leave the patterned photoresist 26 to complete the entire development process. It must be noted here that if the cleaning step of Figure 2D uses air or a readily available organic solvent as the fluid, this spin-drying step is less desirable.

Client’s Docket N〇.:AU0604018 TT’s Docket No:0632-A50732/fmal/hsuhuche 9 200819928 此外，本發明之顯影裝置可與曝光裝置（未圖示）整合 成微影機台。 再者，必需說明的是，上述實施例所述之基板之移動 方向，較佳地，係不同於該流體注入器之移動方向，例如 流體注入器從第一方向移動至第二方向而基板不動、流體 注入器不動而基板從第一方向移動至第二方向、或流體注 入器從第一方向移動至第二方向而基板從第二方向移動 至第一方向，但不限於此。亦可相同於該流體注入器之移 動方向。 • 雖然本發明已以數個較佳實施例揭露如上，然其並非 用以限定本發明，任何所屬技術領域中具有通常知識者， 在不脫離本發明之精神和範圍内，當可作任意之更動與潤 飾，因此本發明之保護範圍當視後附之申請專利範圍所界 定者為準。Client's Docket N〇.: AU0604018 TT's Docket No: 0632-A50732/fmal/hsuhuche 9 200819928 Further, the developing device of the present invention can be integrated with an exposure device (not shown) into a lithography machine. In addition, it should be noted that the moving direction of the substrate described in the above embodiments is preferably different from the moving direction of the fluid injector, for example, the fluid injector moves from the first direction to the second direction and the substrate does not move. The fluid injector moves without moving the substrate from the first direction to the second direction, or the fluid injector moves from the first direction to the second direction and the substrate moves from the second direction to the first direction, but is not limited thereto. It can also be the same as the direction of movement of the fluid injector. The present invention has been disclosed in the above-described preferred embodiments, and is not intended to limit the invention, and any one of ordinary skill in the art can be arbitrarily carried out without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the appended claims.

Client’s Docket No.:AIJ0604018 1 〇 TT^ Docket No:0632-A50732/fmal/hsuhuche 200819928 【圖式簡單說明】 第1A-1D圖係習知之顯影製程示意圖； 第2A-2E圖係本發明實施例之顯影製程示意圖；·以及 第3A-3C圖係本發明實施例之流體注入器之結構示意 圖0 【主要元件符號說明】 1〜平台； 10、20〜基板； 12〜顯影液注入器； 15〜去離子水注入器； 22〜流體注入器； 25〜流體層； 32A、32B〜輸入管； 35B〜流體儲存槽。 3〜回收槽； 11、21〜已曝光之光阻； 14、24〜顯影液層； 16、26〜圖案化之光阻； 22A、22B〜子流體注入器 31〜輸出管； 35A〜顯影液儲存槽；Client's Docket No.: AIJ0604018 1 〇TT^ Docket No:0632-A50732/fmal/hsuhuche 200819928 [Simplified Schematic] FIG. 1A-1D is a schematic diagram of a developing process; 2A-2E is an embodiment of the present invention The development process schematic diagram; and 3A-3C diagram is a schematic diagram of the structure of the fluid injector of the embodiment of the invention. [Main component symbol description] 1~ platform; 10, 20~ substrate; 12~ developer injector; 15~ go Ion water injector; 22~ fluid injector; 25~ fluid layer; 32A, 32B~ input tube; 35B~ fluid storage tank. 3 ~ recovery tank; 11, 21 ~ exposed photoresist; 14, 24 ~ developer layer; 16, 26 ~ patterned photoresist; 22A, 22B ~ sub-fluid injector 31 ~ output tube; 35A ~ developer Storage tank

Client’s Docket No.:AU06040i8 11 TT’s Docket No:0632-A50732/final/hsuhucheClient’s Docket No.: AU06040i8 11 TT’s Docket No:0632-A50732/final/hsuhuche

Claims (1)

200819928 十、申請專利範圍： 1. 一種顯影裝置，包括： 一平台，用以支撐一基板，該基板之表面具有一已曝 光之光阻層； 一流體注入器，係相對於該基板移動，且於一第一時 間注入一顯影液至該基板上以顯影該已曝光之光阻層，並 於一第二時間注入一流體至該基板上以清洗該基板。 2. 如申請專利範圍第1項所述之顯影裝置，其中該流 體注入器包括： _ 至少一輸出管； 至少二輸入管，連接至該輸出管，且該些輸入管分別 提供該顯影液及該流體至該輸出管；以及 一控制閥，位於該輸出管及該些輸入管之連接處。 3. 如申請專利範圍第1項所述之顯影裝置，其中該流 體注入器包括數個第一子流體注入器及數個第二子流體 注入器，係分別提供該顯示液及該流體。 4. 如申請專利範圍第3項所述之顯影裝置，其中該些 φ 第一子流體注入器與該些第二子流體注入器交替排列。 5. 如申請專利範圍第3項所述之顯影裝置，其中該些 第一子流體注入器與該些第二子流體注入器並排。 6. 如申請專利範圍第1項所述之顯影裝置，其中該流 體注入器注入該顯影液或該流體至該基板之角度實質上 呈45度。 7. 如申請專利範圍第1項所述之顯影裝置，其中該流 體注入器於第一時間之速度係與該流體注入器於第二時 間之速度實質上相同或不同。 Client’s Docket No.: AU0604018 TT^ Docket No:0632-A50732/fmal/hsuhuche 12 200819928 8. 如申請專利範圍第1項所述之顯影裝置，其中該流 體包括水、空氣、有機溶劑或上述之組合。 9. 如申請專利範圍第8項所述之顯影裝置，其中該流 體為水與空氣之組合，且空氣之體積比例大於水之體積比 例。 10. 如申請專利範圍第1項所述之顯影裝置，其中， 該基板之移動方向係不同於該流體注入器之移動方向。 11. 如申請專利範圍第1項所述之顯影裝置，更包括 一回收槽位於該平台下。 ⑩ 12.—種微影機台，包括如申請專利範圍第1項所述 之顯影裝置，及一曝光裝置。 13. —種顯影裝置之顯影方法，該顯影裝置，係包括 一平台，用以支撐一基板，該基板之表面具有一已曝光之 光阻層及一流體注入器，係相對於該基板移動，該方法包 括· 於第一時間注入一顯影液至該基板上以顯影該已曝 光之光阻層；以及 φ 於第二時間注入一流體至該基板上以清洗該基板。 14. 如申請專利範圍第13項所述之顯影裝置之顯影方 法，其中該流體注入器包括： 至少一輸出管，以注入該顯影液或該流體至該基板 上； 至少二輸入管，連接至該輸出管，且該些輸入管分別 提供該顯影液及該流體至該輸出管；以及 一控制閥，位於該輸出管及該些輸入管之連接處。 15. 如申請專利範圍第14項所述之顯影裝置之顯影方 Clienfs Docket No.:AU060401B TT*s Docket No:0632-A50732/fmal/hsuhuche 13 200819928 法其中 >主入該顯影液至該基板上與注入該流體至該美板 上之間，更包括將該流體注入裝置移開至該基板之^ 行一預輸出步騄。 退 16.如申請專利範圍帛13項所述之顯影裝置之顯影方 f’/、中該流體注入器包括數個第一子流體注入器及數個 弟子"丨L版/主入裔，係分別提供該顯示液及該流體。 、本甘I如中請專利範圍第16項所述之顯影裝置之顯影方 二二中該些第一子流體注入器與該些第二子流體注入器 乂营排列。 ° 法，H如Λΐ專利範圍第16項所述之顯影裝置之顯影方 並排子流體注入器與該些第二子流體注入器 法，^；申4^利範圍第13項所述之顯影裝置之顯影方 ί度實質液錢㈣至該基板之 =如巾請專·圍第13項所述之顯影裝置之顯影方 ί其：該顯影液至該基板上之時間與注入該流體至 该基板上之時間實質上相同或不同。 體至 法Λ1中 體專圍第13項所述之顯料 J二，氣、有機溶劑或上述之組合。 22. 如申μ專利範圍第21項所述之顯影 法，其中該流體為水與空氣之组人 # 、"'員衫方 水之體積比例。 ^之體積比例大於 23. 如申請專利範圍第13項所述之顯 法，更包括-旋乾步驟，去除該基板，留^之體頁衫方 Client’s Docket No.:AU0604018 TT's Docket No:0632-A50732/fmal/hsuhuche -如申請專利範圍第13項所述之顯影=影方 "Μλ . A Τ ΤΛ/：Λ/Λ 1 Ο 14 200819928 法，更包括一回收槽位於該平台下。 25.如申請專利範圍第13項所述之顯影裝置之顯影方 法，其中，該基板之移動方向係不同於該流體注入器之移 動方向。200819928 X. Patent application scope: 1. A developing device comprising: a platform for supporting a substrate, the surface of the substrate having an exposed photoresist layer; a fluid injector moving relative to the substrate, and A developing solution is injected onto the substrate at a first time to develop the exposed photoresist layer, and a fluid is injected onto the substrate at a second time to clean the substrate. 2. The developing device according to claim 1, wherein the fluid injector comprises: _ at least one output tube; at least two input tubes connected to the output tube, and the input tubes respectively provide the developing solution and The fluid is directed to the output tube; and a control valve is located at the junction of the output tube and the input tubes. 3. The developing device of claim 1, wherein the fluid injector comprises a plurality of first sub-fluid injectors and a plurality of second sub-fluid injectors for respectively providing the display liquid and the fluid. 4. The developing device of claim 3, wherein the φ first sub-fluid injectors are alternately arranged with the second sub-fluid injectors. 5. The developing device of claim 3, wherein the first sub-fluid injectors are juxtaposed with the second sub-fluid injectors. 6. The developing device of claim 1, wherein the fluid injector injects the developer or the fluid to the substrate at an angle of substantially 45 degrees. 7. The developing device of claim 1, wherein the velocity of the fluid injector at the first time is substantially the same as or different from the velocity of the fluid injector at the second time. The developer device of claim 1, wherein the fluid comprises water, air, an organic solvent or a combination thereof. The developer device of the invention of claim 1, wherein the fluid comprises water, air, an organic solvent or a combination thereof. 9. The developing device according to claim 8, wherein the fluid is a combination of water and air, and the volume ratio of the air is greater than the volume ratio of water. 10. The developing device of claim 1, wherein the moving direction of the substrate is different from the moving direction of the fluid injector. 11. The developing device of claim 1, further comprising a recovery tank located under the platform. 10. 12. A lithography machine comprising the developing device of claim 1 and an exposure device. 13. A developing method for a developing device, comprising: a platform for supporting a substrate, the surface of the substrate having an exposed photoresist layer and a fluid injector movable relative to the substrate; The method includes: injecting a developer onto the substrate at a first time to develop the exposed photoresist layer; and φ implanting a fluid onto the substrate at a second time to clean the substrate. 14. The developing method of the developing device according to claim 13, wherein the fluid injector comprises: at least one output tube for injecting the developing solution or the fluid onto the substrate; at least two input tubes connected to The output tube, wherein the input tubes respectively supply the developer and the fluid to the output tube; and a control valve at a junction of the output tube and the input tubes. 15. The developing device of the developing device according to claim 14 of the patent application, Clienfs Docket No.: AU060401B TT*s Docket No: 0632-A50732/fmal/hsuhuche 13 200819928 wherein the developing solution is introduced into the substrate And a step of injecting the fluid to the glazing panel further includes moving the fluid injection device to the substrate for a pre-output step. Retraction 16. The developing device f'/ of the developing device according to claim 13 of the patent application, wherein the fluid injector comprises a plurality of first sub-fluid injectors and a plurality of disciples"丨L version/main person, The display liquid and the fluid are separately provided. The first sub-fluid injector and the second sub-fluid injectors are arranged in the developing unit of the developing device according to claim 16 of the patent application. The method of developing the side-by-side sub-fluid injector of the developing device according to the invention of claim 16 and the second sub-fluid injector method, wherein the developing device according to claim 13 The development method ί 实质 实质 ( 四 四 四 四 四 四 四 = = = = = = = = = = = = = = = = = = = = = = = = = = = : : : : : : : : : : : The time above is substantially the same or different. From the body to the Λ1, the body is covered by the material referred to in Item 13, J, gas, organic solvent or a combination thereof. 22. The development method according to claim 21, wherein the fluid is a volume ratio of water and air to the group of people and water. The volume ratio of ^ is greater than 23. According to the method described in claim 13 of the patent application, the method further includes a spin-drying step to remove the substrate, and the body of the body is the client's Docket No.: AU0604018 TT's Docket No: 0632- A50732/fmal/hsuhuche - as shown in claim 13 of the scope of the invention, the development method of the invention, the film, the 影 . . 2008 2008 Λ Λ Λ 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 The developing method of the developing device according to claim 13, wherein the moving direction of the substrate is different from the moving direction of the fluid injector. Client’s Docket No. :AU0604018 15 TT’s Docket No:0632-A50732/fmal/hsuhucheClient’s Docket No. :AU0604018 15 TT’s Docket No:0632-A50732/fmal/hsuhuche
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