TW200818259A - Methods and systems for controlling critical dimensions in track lithography tools - Google Patents

Abstract

A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.

Description

200818259 IX. INSTRUCTIONS DESCRIPTION OF THE INVENTION [Technical Field to Be Invented] The present invention relates to the field of substrate processing equipment. In particular, the present invention relates to methods and apparatus for controlling critical dimensions during a lithography process. By way of example only, embodiments of the present invention control the critical dimensions of a semiconductor wafer by controlling a zone of heater boards. However, the present invention has a wider range of applications' and can be applied to processes of other semiconductor substrates, e.g., modifying the temperature of the bake plate in accordance with a measurement wafer.

[Prior Art] Modern integrated circuits include millions of individual components formed by patterning materials such as germanium, metal, and/or dielectric layers, which may comprise an integrated circuit that is much smaller than one micron. In the entire industry, the technology used to form this pattern is lithography. A typical lithography process generally includes depositing one or more uniform photoresist (resist) layers on a surface of a substrate; drying and curing the deposited layers; exposing the photoresist layer to a layer suitable for modifying the exposed layer The electromagnetic radiation is then developed by the patterned photoresist layer to pattern the substrate. In the semiconductor industry, it is common to perform a plurality of steps associated with a lithography process in a multi-chamber process system (eg, a cluster tool) that can be processed sequentially in a controlled manner. Semiconductor wafers. An example of a cluster tool for depositing (i.e., coating) and developing a photoresist material is commonly referred to as a guided lithography tool. Rail-type lithography tools typically include a main frame that houses a plurality of chambers (sometimes referred to herein as stations or modules in the text of 200818259), which are dedicated to holding and squatting clothes Wang Zhifei and the various tasks related to it later. Typically in a guided lithography tool there is a wet and dry processing chamber. The wetting chamber includes a coating and/or developing disk, and the drying chamber includes a thermal control element that houses the flooding and/or cooling plates. Guided lithography tools also often include one or more pod/cassette mounting components, such as a front opening unified pod (FOP) for use with a clean room. Receiving and returning a substrate; a plurality of substrate transfer mechanisms for transferring substrates between the various chambers/station of the guided tool; and an interface that allows the tool to be operatively coupled to a lithography exposure tool for The substrate is transferred to an exposure tool, and after the substrate is processed through the exposure tool, the substrate is received from the exposure tool. For many years, the size of semiconductor components has been strongly promoted in the semiconductor industry. The reduced feature size has led to industry tolerance for process variations, in other words, semiconductor manufacturing specifications have become more demanding for process uniformity and repeatability. One of the important factors in minimizing process variability in the rail-type lithography processing sequence is to ensure that in the chamber of the rail-type lithography tool, the surface of the substrate to be processed has a controllable (passive 1 often spatially uniform) key Size (CD) feature. Changes in wafer CD can lead to reliability issues and can adversely affect component yield. In view of these needs, methods and techniques have yet to be developed to provide a controllable wafer CD during semiconductor manufacturing operations using V-type lithography tools and other types of clustering tools. 200818259 SUMMARY OF THE INVENTION In accordance with an embodiment of the present invention, a method of controlling wafer critical dimension (CD) uniformity on a guided lithography tool is provided. The method includes obtaining a CD map of a wafer. The CD map includes a plurality of CD data points associated with a multi-zone heater geometry. In an embodiment of the invention, the multi-zone heater includes a plurality of heater zones. The method further includes determining a CD 第一 of the first heater zone of one of the heater zones based on the one or more of the CD data points, calculating a determined CD value of the first heater zone and the first heater A difference between the target CD values of one of the zones, and a temperature change of one of the first heater zones is determined in part based on the calculated difference and the temperature sensitivity of one of the photoresists deposited on the wafer. The method also includes modifying the temperature of the first heater zone based in part on the temperature change. In accordance with another embodiment of the present invention, a method of controlling a CD during semiconductor wafer processing is provided. The method includes measuring a CD distribution of a first semiconductor crystal, comparing the measured CD distribution to a target distribution, and determining that the measured CD distribution is not within a predetermined tolerance of the target CD distribution. The method further includes calculating a temperature offset of a region of the multi-zone bake plate according to the determining step, modifying a temperature set point of the region of the multi-zone bake plate, and processing the temperature using the modified temperature set point A second semiconductor wafer. According to another embodiment of the present invention, a rail type lithography tool is provided. The rail lithography tool includes a fabrication interface for receiving a wafer coupled to the tool interface and a process module. The process module includes a plurality of coating stations, a plurality of developing stations, and a process unit. The process unit 8 Ο 200818259 includes a baking plate. The baking plate includes a plurality of heater zones and has a multi-zone baking plate. The characteristics of the geometry. The rail-mounted lithography tool further includes a controller configured to receive the C-picture of the wafer. The c-D map includes a plurality of CD data points associated with the multi-zone bake plate geometry. The controller also includes a computer-readable medium that stores a plurality of instructions for controlling a processor to modify a wafer CD distribution. The instructions include instructions for causing the data processor to determine a CD value of the first heater zone of the heater zones based on one or more of the CD data points; The command of the first heater zone determines the difference between the CD value and a target c D value of the first heater zone. The instructions further include instructions for the data processor to determine a temperature change of one of the first heater zones based in part on the calculated difference and a temperature sensitivity of the photoresist deposited on the wafer; and processing the data The device changes the temperature of one of the first heater zones in part based on the temperature change. In accordance with an alternative embodiment of the present invention, a method of controlling wafer critical dimension uniformity on a guided microtool is provided. The method includes obtaining a CD map of one of the wafers. CD images can be obtained using an OCD precision measurement tool. The CD map includes a plurality of CD data points (e.g., 66 or more dots). The method also includes overlaying the map on a zone heater geometry. In an embodiment, the zoned heater geometry is based on a plurality of zoned heaters. The method further includes assigning each of the plurality of CD data to at least one of the zones, determining a temperature sensitivity of a light associated with the wafer, and in part relying on one or more of the c D sites 'Determine the temperature change of at least one of the zones. The temperature-sensitive control of the package is responsible for the correction of the CD site resistance. 200818259 can be correlated with the slope of the temperature curve of the CD. Moreover, the method includes modifying the temperature of one or more of the zones based in part on temperature changes. According to a particular alternative embodiment, the method additionally includes repeating the obtaining, overlapping, assigning, determining temperature changes, and modifying the one or more steps. As an example, a measured wafer CD is repeatedly modified to acquire a wafer CD within a predetermined value of a target wafer CD. Moreover, the method can include averaging a subset of the plurality of CD data points, wherein the data points are associated with a region of the regions to provide a zone CD average. The present invention achieves many advantages over conventional techniques. For example, embodiments of the present invention provide improved CD uniformity as compared to conventional techniques. In addition, embodiments provide a method of adjusting CD uniformity within a wafer that can be used as a high level process control at the lT-to-lot or even wafer-to-wafer level. Architecture. Moreover, the technique is not limited to achieving optimal CD uniformity, but can also be used to achieve a particular non-uniform CD distribution within a wafer. The methods and algorithms described herein also allow for an optimal uniformity distribution that can be achieved by manually adjusting the number of iterations. One or more of these and other advantages are achieved, depending on the embodiment. These and other advantages will be described in more detail in the present specification, and the following drawings are to be more specifically described. [Embodiment] Fig. 1 is a plan view showing a lithographic tool according to an embodiment of the present invention. In the embodiment as shown in Figure 1, the rail-type lithography tool is coupled to an immersion scanner. To clarify the directional relationship therein, an XYZ rectangular coordinate system is also shown in Fig. 1 of 2008 18259, in which the XY plane is defined as a horizontal plane and the Ζ axis is defined as extending in the vertical direction. In a particular embodiment, a guided lithography tool is used to form an anti-reflection (AR) and a photoresist film on a substrate (e.g., a semiconductor wafer) by using a coating process. After the substrate is subjected to the pattern exposure process, the guided lithography tool performs a development process on the substrate. Other processes performed on rail-type lithography tools that can be combined to an immersion scanner include ΡΕΒ or similar processes. The substrate processed by the rail type lithography tool is not limited to a semiconductor wafer, and may include a glass substrate and the like for a liquid crystal display device. The guiding lithography tool 10 shown in FIG. 1 includes a manufacturing interface block 1, a BARC (bottom anti-reflection coating) block 2, a resist coating block 3, a developing process block 4, and a Scan interface box 5. In the V-tracked shadow tool, the five processing blocks 1 to 5 are arranged side by side. An exposure unit (or stepper) EXP is provided and coupled to the scanning interface block 5, which is an external device separate from the guided lithography tool. In addition, the guided lithography tool and the exposure unit ΕΧρ are connected to a host computer 160 via the LAN line 162. The manufacturing interface block 1 is a process block for transferring the unprocessed substrate received from the outside of the rail lithography tool to the BARC block 2 and the resist coating block 3. The manufacturing interface block 1 is also used to transfer the substrate processed by the self-developing process block 4 to the outside of the rail-type lithography tool. The manufacturing interface block 1 includes a table 1 12 that is configured to receive a number (four in the illustrated embodiment) of a boat (or carrier, 11 200818259 and a substrate transport mechanism 113) For taking an unprocessed substrate W from each of the wafer boats c, and accommodating the processed substrate w in each of the wafer boats c. The substrate transfer mechanism 113 includes a movable base 114 (which can be along the work table 112) The robot arm 1 1 5 〇 in the γ direction (horizontally) and mounted on the movable base 设置1 is provided to support the substrate W in a horizontal position during the wafer transfer operation. The arm 1 15 can move in the z direction (vertically) relative to the movable base 1 14 , pivot in a horizontal plane, and move back and forth in the pivotal direction. Therefore, the substrate transfer mechanism 丨丨 3 is used to clamp The arm 1 15 can enter each of the boats C, and take an unprocessed substrate w out of the wafer C, and store the processed substrate W in each of the wafer boats c. The boat C can be one or several Types, including: a SMIF (standard mechanical interface) transfer box; an O C (opening boat) that exposes the stored substrate W to air; or a FOUP (front open wafer cassette) that stores the substrate W in a closed or sealed space. Location and manufacturing interface of the BARC block 2 The block 1 is adjacent. The spacer 20 can provide a gas seal between the manufacturing interface block 1 and the BaRC block 2. The spacer 20 has a pair of vertically disposed substrate carrier portions 30 and 31, which are fabricated at the interface block 1 When the substrate W is transferred between the BARC block 2, the carrier portions can be used as a transfer position. Referring again to Figure 1, the BARC block 2 includes a bottom coat processor 1 24 disposed to coat the AR film. a surface of the substrate W; a pair of process towers 1 22 for performing one or more thermal processes associated with forming the Ar film; and a transfer machine 101 for coating the processor 1 24 and the pair of process towers 12 from the bottom 200818259 1 2 2, transfer and reception of the substrate w. Each coating process is a single rotating chuck 126, and when the substrate W is held in the upper horizontal position by suction, the substrate W is rotated on the spin chuck 126. The process unit further includes a coating nozzle 128 for Applying a solution of the dead film to the substrate w on the spin chuck 1 2 6; - rotating, display), is provided for rotationally driving the spin chuck 126; - cup-shaped winding on the spin chuck 1 2 6 Substrate w and the like. The resist coating block 3 is a process block which forms a resist film on the substrate W after the AR film is formed on the BARC side. In one embodiment, a chemically amplified resist is used as the photoresist. Layer 3 includes a resist coating processor 134 for forming a resist film at the AR; a pair of process towers 133 for performing one or more thermal processes with resist coating; and transfer machinery丨0 2 is used to transmit the substrate W from the overlay processor 134 and the pair of process towers 133. Each of the coating processing units includes a spin chuck 136, a spray to apply a resist to the substrate W, a rotary motor (not shown), a (not shown), and the like. Process tower 132 includes a number of vertically stacked baking chamber plates. In a particular embodiment, the bake chamber is included at the manufacturing block from the manufacturing interface block 1 and the cooling plate is included at the manufacturing station block i. In the embodiment illustrated in Figure 1, the chamber includes a vertically stacked bake plate and a temporary substrate holder, and the transfer mechanism 1 34' is disposed for vertical and horizontal movement for use with the temporary substrate holder The substrate w is transferred, and may include a unit including a large coating > into an AR motor (not, a process on a specific real resist film in the ring block 2, a resist coating and a connection 138, a cup The chamber and the colder far-end system, the baking and the baking sheet are actively cooled. The transfer mechanism 102 is the same in some embodiments as the transfer machine 101. The transfer machine 102 can independently enter the substrate holder Portion 33, process tower 132, coating processing unit ' provided in resist coating processor 134, and substrate carrier portions 34 and 35. 'Developing process block 4 is positioned in resist coating block 3 and scanning Between the interface blocks 5. A spacer 22 is provided for sealing the development process block to separate the gas of the resist coating block 3. The development process block 4 includes: a development processor "4, in the overscan After exposure, development β 1 4 4 will apply the developing solution to the substrate W, another pair of thermal processing towers 141, 142, and a transfer machine 1〇 3. Each developing process unit includes a spin chuck 146, one for The developer is applied to the nozzle 148 of the substrate W, the rotary motor (not 7F-cup (not shown), and the like c scanning face block 5 for conveying a coated substrate w to the scanning crying EXP, and The exposure substrate is transferred to the development process block 4. The scanning interface of the embodiment shown in the embodiment includes a transfer mechanism 丨54 for exposing the unit EXP to perform the transfer of the h 法 butyl plate W. And receiving; a pair of edge units EEW for exposing the periphery of the substrate coated with frost; and a conveyor 104. The substrate holder portion 39 is swelled, mechanically, and 39 along the pair of edge exposure units Eew , for the round-trip transfer of the substrate from the scanner and the _ 岑 次 制 。 。 。 。 。 ; ;

The mobile base 154A and a clamp T 154 安装 mounted on the mobile base 154A. The gripping arm j 54 Β can be moved, pivoted, and moved back and forth on the pivot radius θ of the phase shifting base 154A. If the exposure is too early to receive the substrate w, the buffer SBF will be used to store the substrate W. The substrate W will be stored before the exposure process, and will include a cabinet, which can be arranged in layers. A plurality of substrates w are stored. Controller 160 can be utilized to control all of the components and processes executed in the cluster tool. Controller 160 is typically coupled to scan interface block 5 to monitor and control the process conditions performed in the cluster tool and to control all conditions of the entire substrate process. The controller 〇6〇 is typically a microprocessor-based controller that can be configured to receive input from a user and/or each sensor in the processing chamber and to remain in the controller based on each input The instructions in the memory are 'correctly controlling the process chamber components. The controller 160 typically includes a memory and a CPU (not shown) that can be used by the controller to retain programs, process the programs, and execute the programs as necessary. A memory (not shown) connected to the CPU may be one or more readily available memories such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk or any other memory. A form of digital storage, either locally or remotely. Software instructions and data can be encoded and stored in the memory for instructions to the CPU. A support circuit (not shown) is also coupled to the CPU to support the processor in a conventional manner. The support circuitry can include buffers, power supplies, clock circuits, input/output circuits, subsystems, and all of the similarities well known in the art. The program (or computer command) that can be read by controller 决定 60 determines which tasks are performed in the process chamber. Preferably, the program is readable by controller 160 and includes instructions for monitoring and controlling the process based on defined rules and input data. Further description of a substrate processing apparatus according to an embodiment of the present invention is provided in the invention of the "Patent Processing Apparatus", the entire disclosure of which is incorporated herein by reference.

〇· 200818259. Although the rail-type lithography tool in Fig. i depicts an embodiment of the invention, other architectures of the rail-type lithography tool are also included within the scope of the embodiments. For example, a navigation tool employing a Cartesian architecture is also applicable to an embodiment as described throughout the present application. In a specific embodiment, it can be executed via RF3i available from Sokudo, Kyoto, Japan. Figure 2 is a simplified diagram of an integrated thermal unit in accordance with an embodiment of the present invention. The integrated thermal unit 210 can provide both baking and cooling processes in a single integrated unit in the process tower illustrated in Figure 1. 2, the integrated thermal unit 21A includes a baking station 220, a shuttle 230, and a crucible cooling plate 24〇. For clarity, various components of the integrated thermal unit 21A are shown, including control housings, motor lifts, and the like. Although not fully shown in Figure 2, the integrated thermal unit includes an outer casing made of aluminum or other suitable material. Some of the shells are shown in 2 15 . The housing includes a unit' and each of the toasting station assemblies is mounted in the unit in a compact manner. In the projector of Fig. 1 as described above, the housing may initially stack a plurality of integrated thermal units stacked on each other, the housing including one or more elongated openings (not shown) which allow the substrate to be transported in and out. A gate may be provided to seal one or more of the elongated opening shuttles 230. The substrate may be transferred between the bakeware (not shown) into the cooling plate 240 to smear the plate. In other loads and unloading the violent pole station 220, the cooling plate 240 and one. In some embodiments, the central portion of the plurality of embodiments in the integrated thermal unit transmits the shuttle 250 from the cold-spotted version of the present invention. 2 sub, outer 2 1 bag such as the panel with a tight track micro. Remove the wafer from the tip of the hot spring π 〇 central machine at the end of the 16 200818259 (the wafer is placed by the main machine) and move it to the bake plate and back. In these embodiments, the transfer shuttle 23 is not necessarily accessible by the primary machine. Typically, the transfer shuttle is linearly movable along the length of the thermal unit and is vertically moved within the thermal unit by actuating the vertical actuator 25A. After passing through the elongated opening at the position corresponding to the transfer shuttle 2 3 所示 shown in Fig. 2, the substrate can be brought into the thermal unit by placing the substrate on the transfer shuttle 23〇. Embodiments of the invention are not limited to this transfer arrangement because the wafer can be transferred to and from the chamber by placing the wafer on the tip of the cooling plate. The shuttle transports the substrate to the cooling plate 24 and the bake station 220 for a particular thermal process performed on the substrate. Lift pin slots 232A and 232B are provided in the transfer shuttle 23'' to support the wafer to pass the shuttle. The transfer shuttle is mounted on a vertical actuator 25A which moves the transfer shuttle vertically within the integrated thermal unit. The baking station 220 includes a baking plate in a clamping housing, which is discussed in detail in this specification, and the baking plate can be a multi-zone heater plate to regulate heat. The controlled heat is supplied to various portions of the substrate located on the baking sheet. Embodiments of the present invention are utilized in temperature control processes for post-application-bake (PAB) and/or post-exposure-bake (PEB) processes. It is not limited to use in such processes because the cooling temperature control structure is included in the scope of the embodiments of the present invention. These other temperature control structures include cooling plates, developing plates, and the like. Those skilled in the art will appreciate that there are many variations, modifications, and alternatives to 17 200818259. Figure 3A is a top plan view of an example of a multi-zone bake plate comprising six different independent electrical heating zones in accordance with an embodiment of the present invention. According to an embodiment of the present invention, the bake plate 310 is used in the integrated heat unit 210 shown in Fig. 2. As shown in Fig. 3A, 'bake plate 3 1 0 includes six independent heater zones 3 1 2 1 - 3 1 26, which are disposed along a corresponding number of temperature sensors 3 14 i - 3 1 4 6 And opposite each heater zone 312ι -3126. Different types of temperature sensors (eg, impedance temperature detectors (RTDs) may be used depending on the particular application. A controller (not shown) is used in the feedback loop to control each heater zone 3 1 2 The temperature of i - 3 1 26. For example, in one embodiment, the bake plate 3 1 〇 includes two or more insulating layers with a kapton layer interposed between the insulating layers. The metal wires are then used to electrically heat the respective heater zones 3 1 2! - 3 1 26, which are formed in a patterned wiring. Those skilled in the art will appreciate many variations, modifications, and alternatives. Other descriptions of multi-zone heater plates are provided in U.S. Patent Application Serial No. 1 1/4, 83, 832, filed on Jul. 7, the entire disclosure of which is hereby incorporated by reference. The bake plate 310 shown in section 3A uses only a single temperature sensor in each zone, but this embodiment does not require this. In alternative embodiments, one or more of these zones may be used. Use multiple temperature sensors in . In addition, although baking plates 3 1 0 uses six temperature zones, the number of specific zones, and the illustrated geometric arrangement 'is not required by the embodiment of the invention 18 200818259. In other embodiments, the zone teachings may be increased or decreased, each The spatial layout of the zones may be modified or treated similarly. Those skilled in the art will appreciate many variations, modifications, and alternatives.

Fig. 4A is a flow chart showing a method of controlling wafer CD distribution according to an embodiment of the present invention. Method 400 begins with step 402 as shown in FIG. 4A. In step 404, the wafer (or set of wafers) is processed through a CD process using a multi-zone bake plate (BHP). In step 406, a graph of % distribution of CD in the wafer is obtained using a precision metrology tool. For example, the precision measurement tool can be a precision measurement tool from Nanometrics Atlas of Nano metrics, Inc. of Milpitas, CA, SpectraCD 200 from KLA-Tencor Corp. of San Jose, CA, or other suitable precision measurement. tool. It should be noted that the acquired CD map in step 406 can be taken after performing a lithography process on the wafer, or after other processing steps, including etching, deposition, annealing, and the like. The number of C D data points contained in the wafer C D map will usually depend on the specific operating parameters selected for the precision measurement tool. Typically, these specific operating parameters are based on manufacturing conditions. For example, the yield of a precision measurement tool is usually inversely proportional to the number of collected CD data points, and completing a higher yield will reduce the number of CD data points provided. In some embodiments, the number of CD data points is much greater than or equal to the number of heater zones provided by the multi-zone bake plate. Thus, some embodiments will provide 6, 29, 66 more or fewer CD data points. As understood by those skilled in the art, the density of CD data points will be related to the geometrical arrangement of the CD data points (measurement points) and the multi-zone bake plates. In some embodiments, the CD data points are collected in a grid configuration having a predetermined distance between each point, for example, about 20-30 mm. This distance can be varied as a function of position, providing increased or decreased density at the center, edge, or the like of the wafer to suit the needs of the particular application. Depending on the geometry of the multi-zone heater plate, the number of measurement points per heater zone and the individual measurement points in each of the different heater zones will vary. Thus, when a CD data point is associated with a heater zone geometry, one or more CD data points will be assigned to each heater zone. Typically, several measurement points will be assigned to each heater zone, and the assigned measurement points will be spread across different locations in each heater zone. In some embodiments, the CD data points are averaged to calculate an average CD value for each heater zone. This averaging can be calculated by considering each CD data point in a particular heater zone, or can be calculated as a weighted average as detailed below. Moreover, if applicable to a particular application, a subset of the CD data points can be used when calculating the zone average in some embodiments. Therefore, the density of the measurement points can be varied or modified as compared to the original density associated with the CD measurement process. Generally, it is preferred to have a higher data density in the smaller heater zone, such as four heater zones 3 1 2 3 - 3 1 2 6 located around the periphery of the bake plate as shown in Figure 3A. . By way of example only, in a specific precision measurement process (which can be optical CD, OCD), a CD measurement (CD-SEM) using a scanning electron microscope (or the like) can measure 60 CD data. point. These 60 measurements 20 200818259 points are evenly distributed in a grid pattern on the surface of the semiconductor wafer. For the multi-zone bake plate shown in Figure 3A, there are approximately 10 measurement points in the heater zone 3 1 2 i and approximately 30 measurement points in the heater zone 3 1 22, in heating There are approximately 5 measuring points in the zone 3 1 2 3 - 3 1 2 6 . The method also includes comparing the measured CD distribution to a desired CD distribution (408). If the measured CD distribution is within a predetermined limit, or (4 1 0) is satisfied, the CD control process is terminated at step 416. Whether or not the CD distribution meets the requirements can be determined by comparison with a predetermined specification or other criteria. If the measured CD distribution does not meet the need, then in step 4 1 2, the offset between the measured CD distribution and the desired CD distribution is calculated. A discussion of how to calculate the offset in step 4 1 2 will be provided in this specification, which will be described in detail below. Based on the calculated offset, the temperature of each heater zone of the multi-zone bake plate can be modified to provide different temperatures in each heater zone. Modifying the temperature in one zone typically affects not only the CD of the modified zone, but also the results of crosstalk between heater zones (and other factors) that affect the CDs of other zones. Thus, as shown in FIG. 4A, one or more steps of the repetitive process 400 are repeated multiple times using a repetitive replication process until the CD as a function of wafer position function meets the target CD distribution in a predetermined tolerance. Or meet other needs. In step 4 14 4, in order to determine the amount of temperature modification applicable to each heater zone, the temperature sensitivity distribution of the particular photoresist used in the lithography process (e.g., the slope of the CD versus temperature plot) is utilized. Figure 5A is a temperature sensitive of a first example photoresist Resist 1 21 200818259 Simplified figure. As shown in this figure, for Resist 1, the curve is usually linear. If the target CD is the value B and the measured average C D is the value A, the temperature S of the heater zone is added to the temperature T b . Therefore, ΔΤ for the ACD heat exchanger area of each heater zone is used for a map similar to the distribution shown in Fig. 5A. Figure 5B is a simplified diagram of the sensitivity of a second example to photoresist. As shown in Fig. 5B, the insensitivity is linear. In some embodiments, a model of sensitivity is utilized using polynomial fitting or other modeling techniques. Modifications and alternatives will be apparent to those skilled in the art. Returning to step 4 1 2 shown in Fig. 4A, the CD offset can be counted. As discussed above, the average CD value can be covered to provide a simplified for each heater zone. Alternatively, a weighted average can be calculated using a pair of heater zones and adjacent zones. In a particular embodiment, a portion of a multi-zone heater panel can be used at a point in a particular heater zone and/or at a point in the adjacent zone, in a particular embodiment of the invention. The weighted average is shown in Figure 3B, and the partial multi-region CD number measurement points in Figure 3A are covered. For the sake of clarity, there is no point. In a particular embodiment, the measurement points that fall between a heater zone 3 40 are used to determine the heater zone C D average. The 10 points of the measurement point, that is, the relative temperature of the measurement point 1 CD, the temperature sensitivity of a heater zone ί from the temperature TA is changed to the resistance polynomial fitting of the temperature required for each Resist 2 to establish a resist. The temperature resolves many changes, and each mode performs an average CD 计 on the heater zone. The amount of CD at the point is applied to the calculation shown in Figure ,. The heater zone 3126 is covered as shown in the baking plate by a weighting 330-336 and 22 200818259 366-370 showing all quantities 3 126 to the boundary zone 3 1 2 6 .

Other measuring points, such as six measuring points 3 5 0, 3 5 2, 3 6 0, 3 6 2, 364 and 372 ("Boundary Point") are located outside the heater zone of interest, but still in the boundary zone Within 3 40. Although these boundary points do not cover the heater zone, when calculating the "average" CD for the heater zone 3 1 26, the CD values associated with such boundary points may be included as needed. Therefore, the CD values associated with these six boundary points are weighted (i.e., weighted less than or equal to one) to account for their share of the average of the zone. These weights may be equal or unequal depending on several factors, including the distance of each point from the center or zone edge of the zone, the proximity of the point to the adjacent heater zone, and the like. Some measurement points, for example, 3 5 4 and 3 5 8 are located on the edge of the boundary zone. These values can be weighted or ignored depending on the particular algorithm chosen. Although not required, it is ignored in the following examples. Finally, some points in this particular embodiment (e.g., measurement points 365 outside the boundary area) are ignored. As an example, the following algorithm is used to calculate a weighted average for the heater zone, where an equal weight w is given to all boundary points (y (330 ... 336) + X (366 ... 370)) + <350 + 352 + 360 + 362 + 364 + 372) CDw, - ----~~:--, where the value 10 in the denominator is equal to the number of measurement points covering the heater zone 31 26, and the value 6 is equal to the classification as the boundary point The number of measurement points. Of course, other weights can be applied to the measurements, depending on the particular embodiment. In the above algorithm, points outside the boundary area 3 40 are ignored, but the present invention does not require this. These points can also be weighted and then included in the calculation. 23 200818259

Those skilled in the art will appreciate that the above examples (where the boundary points are weighted) can be extended to the calculation of additional CD measurement points regardless of their position on the wafer. As a result, when determining the CD distribution of the multi-zone bake plate, the influence of one heater zone on the other heater zone (i.e., crosstalk between the heater zones) can be calculated. By way of example only, a 6x6 matrix can be used for a six-zone bake plate, which is related to each heater zone change for all other heater zones. As an example, in the matrix-based calculation, if the temperature of the first zone is increased by 0.5 ° C, the temperature of an adjacent zone may be increased by 0.2 ° C, and a zone on the opposite side of the bake plate The temperature can be reduced by 0.03 °C, and so on. Of course, the actual value can be determined based on experience, calculations, or a combination of both. Moreover, a solid model of the panel can be employed and a calculation performed therein to determine the temperature of each C D point on the panel as a function of the offset and use the calculated temperature to calculate the possible CD. An optimization technique is then used to minimize the sum of the variances between the predicted CD and the desired CD to find the best prediction offset. In this model, the offset can be an adjustable parameter. Additionally, in addition to minimizing the sum of squares on the board, more complex models may be included in embodiments of the present invention. Many variations, modifications, and alternatives will be apparent to those skilled in the art. It will be appreciated that the specific steps illustrated in Figure 4A, in accordance with an embodiment of the present invention, provide a particular method of obtaining the desired CD distribution. Other sequences of steps may also be performed in accordance with alternative embodiments. For example, alternative embodiments of the present invention may perform the steps listed above in a different order. Moreover, the individual steps illustrated in Figure 4A may include multiple sub-steps, which may be applied to each sequential execution of a single step. Moreover, additional steps can be added or removed depending on the particular application. Many variations, modifications, and alternatives will be apparent to those skilled in the art. In an alternative embodiment, another method of controlling a CD is provided. The method 430 shown in the simplified flowchart of FIG. 4B includes the following steps: 1) Acquiring a wafer CD map (432) containing a certain number of CD data points. The wafer CD map can be obtained by using one of the above several available precision measuring tools; 2) correlating the CD data points (eg, 66 CD data points per wafer) with the heater panel geometry (434); Assigning at least one CD data point (436) to each zone of the heater board; 4) comparing the measured CD value of one or more heater zones to a target CD of the heater zone, one or more The heater zone provides a Δ CD (43 8). In a particular embodiment, comparing the measured CD values includes calculating an average CD value for each heater zone as described above, and comparing the values to a target CD value for each heater zone to generate a CD. Offset. As noted above, the average may be a simple average, a weighted average of adjacent or all zones, or the like. 5) Modify the temperature of one or more heater zones according to the CD offset (440); and 6) Repeat steps (1) through (5) - or multiple times (for example, 3-5 times) (442) as appropriate. According to some embodiments of the present invention, the method shown in FIG. 4B can be used to repeatedly control the syllabicity as a function of wafer position. For example, step 442 can include determining if the ΔCD of a heater zone is less than a predetermined threshold.隹... These examples use a linear function as the temperature for the CD. This embodiment does not require this. This article also provides a mountain number relationship, including polynomial fits, or other models related to CD temperature or smuggling, number changes. Thus, at step 43 8, although a difference', the calculation may include a differential calculation or other fitting procedure applicable to the particular process being used. Many variations, modifications, and alternatives will be apparent to those skilled in the art. It will be understood that the specific steps shown in Figure 4B provide a method of specifically controlling the CD to obtain a measured CD distribution within a predetermined valley of the target damper, in accordance with an embodiment of the present invention. According to the alternative, the order of other steps is performed. For example, alternative embodiments of the present invention may perform the steps listed above in a different order. Moreover, a single step shown in the figures may include a plurality of sub-steps that are performed in various sequences in the single steps. Moreover, additional steps can be added or removed depending on the particular shoulder. Many variations, modifications, and alternatives will be apparent to those skilled in the art. With the techniques provided in embodiments of the present invention, the wafer bit function can be used to reduce or minimize the CD non-uniformity. One or more calibration wafers are typically processed prior to processing a circle. Therefore, the calibration is used to calibrate the system' and the minimum CD non-uniformity is determined. Additionally, the techniques provided by embodiments of the present invention are substantially applicable to portions of a programmed algorithm (e.g., automatic process control APC) and the like. A plurality of other functions are shown, in order to understand that the CD-like solid real %B can be used, and the solution of the batch crystallographic crystal is obtained. The algorithm provided by the embodiment of the present invention can be used for the production of 26 200818259. Critical size (CD) control in a specific half. As an example, the temperature distribution of the 1 baking sheet can be controlled as a function of wafer position and thus the least uniformity. In another embodiment, the CD modulation algorithm ΐ steps: 1) measuring a wafer CD distribution; 2) obtaining a wafer temperature map; μ system changing to a small drying CD 4

3) Measurement d (CD);

4) Decide on the heater zone setting; and 5) Perform additional steps if necessary. In one embodiment, the crystallographic map can be obtained using a wafer, such as the SensArray Process Probe® instrumented substrate from Sens Array Corporation ι Clara, CA, produced by Onwafer Technologies (Clara) , CA's BakeTemp SensorWafer or similar device, the temperature map of the wafer to be processed. In step 3, the measurement as a temperature function change. Measure as a position function measurement, mention you

aT quantity function. The functional relationship between CD and temperature can generally be non-linear and can be accomplished using various models known to those skilled in the art. In a system using a scatterometer, the change in light in the scattering metric distribution of the reference can be used to round the temperature Santa to prepare the instrument to obtain the CD ^ multiple ft function of the number, < model Temperature change & reaction process performed on wafer 27 200818259. The heater zone setting is based in part on the measurement

The result of dT. In other embodiments, a predetermined CD distribution as a function of wafer position is achieved using the techniques provided herein, rather than minimizing CD non-uniformity as a function of the wafer. By way of example only, it may be desirable to provide a CD distribution that is reduced by a radius of the wafer. In this embodiment, the CD as a function of wafer radius can be analyzed and the difference between the measured CD as a function of radius f > radius and the required CD can be minimized. Of course, with the embodiments of the present invention, other functional relationships between C D and location can be provided. Some embodiments of the invention are used to calibrate a bake plate or to optimize a bake plate temperature profile. In this embodiment, a wafer or other temperature measuring device (e.g., the Sens Array Process Probe® instrument substrate as described above) is used to measure the temperature of the bake plate as a function of the geometric arrangement of the bake plate. A calculation is performed to determine the difference between the measured temperature and the target temperature as a function of the geometric arrangement of the bake plate. Then adjust the heating zone for the baking sheet to respond to the determined temperature difference. Repeat • Repeat this process until the bake plate temperature as a function of position is within the predetermined tolerance. 0 The bake plate calibration process can be performed as follows: 1) Determine the wafer CD distribution; 2) Bake the plate in the multi-zone Place a measurement wafer on it; 3) measure the temperature of the baking sheet as a function of position; 28 200818259 4) Calculate Tmeasured - Ttarget as a function of position (ie Δ T (position)); 5) Calculate as CDmeasured - CDtarget (ie ACD (position)); 6) adjust the heater zone setting in response to the calculated temperature difference; 7) determine if the AT (position) is less than a predetermined tolerance; and 8) repeat the steps 2)-5) until ΔΤ (position) is less than the predetermined tolerance. As an example, another CD modulation process will be described. Using a quantity of crystal

A circular or other temperature measuring device provides a wafer temperature map that includes the average temperature of the wafer and the temperature as a function of position. The temperature as a function of position is related to the temperature in each zone in the heater plate. After performing a half-system (e.g., development), a tool is used to measure the CD of the wafer, either outside the lithography tool (integrated precision measurement) or outside the lithography tool (independent precision measurement). For each heater zone, the corresponding wafer area is measured to provide an average CD and provide a CD value for each zone. Thus, for each zone, an average temperature and an average C D are provided. Change the temperature of a zone and repeat the measurement process to provide -△-呀

AT measurement. Make multiple measurements as a function of zone temperature to provide

d{CD) drawing of dT. It will be understood that there will be interactions between the zones, so

dT forms a matrix, changes the first zone to provide a one-dimensional row, and then changes another zone, and then changes both. Those skilled in the art will understand that 29

200818259 Many changes, modifications and alternatives. Once you get the ---^ measurement

dT achieves the required C D , setting the temperature of the heater zone to the achieved CD 〇 It should be understood that, in accordance with an embodiment of the present invention, a method of specifically executing a CD is provided. Other sequence of steps is performed in accordance with an alternative embodiment. For example, alternative embodiments of the present invention perform the steps listed above in the same order. Moreover, the above description may include a plurality of sub-steps that may be applied to the various sequences performed. Moreover, depending on the particular application, additional steps can be added. Those skilled in the art will appreciate many variations and alternatives. The CD modulation algorithm described above can also be used to optimize processes used in one or more wafer lithography processes. Such process packages are:) a baking process, a developing process, a photoresist coating or other coating process or the like. In the baking process, the method provided according to the present invention comprises the following steps: 1) measuring a wafer CD distribution 2) obtaining a wafer temperature map matrix, for the specific steps required, or Step in a single step or remove the attachment, modification, and measurement in the semi-conductor (but not limit, Shen 3)

d{CD)dT 4) Determine the heater zone setting 5) Perform the baking process

6) Measuring wafer CD 30

200818259 7) Optimized heater zone setup 8) Performing other steps as necessary It should be understood that the specific steps illustrated above are specific methods for performing CD modulation for lithography processes provided in accordance with implementations of the present invention. Other sequential steps can also be performed in accordance with an embodiment. For example, the generation of the present invention can perform the steps listed above in a different order. Moreover, the individual steps shown above may include multiple sub-steps that may be applied to multiple sequential executions of the steps. Moreover, additional steps may be added or removed depending on the particular application. Many variations, modifications, and alternatives will be apparent to those skilled in the art. Figure 6 is a simplified cross-sectional view of a multi-zone heater plate in accordance with an embodiment of the present invention. As shown in Figure 6, a number of radiant lamps are used to provide a space independent heater zone. The lamps that emit infrared or other wave radiation may be arranged in a two-dimensional pattern in a plane aligned with the substrate, as shown, the heater plate may be constructed of quartz or other suitable material to absorb radiation from the lamps. Use adjacent tips to support the wafer. The chuck mechanism of the vacuum chuck and electrostatic chuck (E-chuck) can be used for specific applications. A controller is used in the feedback loop (not shown) to vary the individual strength to provide a spatially varying thermal load to the heater plate. In one embodiment, a computer (not shown) interacts with a measurement wafer or substrate temperature sensor (not shown) to provide the controller with an input message utilizing the lamps as pixels. A two-dimensional pattern can be created on the heater plate to form some controllable zones. In combination with the additional examples discussed above, the replacement of the stencils and the sturdy heats of the lamps and lanterns 31 200818259, including the segmented heater elements, can be combined in the third The thermal temperature distribution of the plates in the lateral direction provides additional control. The seventh diagram of the Ding Knife is based on a simplified cross-sectional view of each of the multiple zones of the present invention. For example, in the 7th picture, the me picture of the board does not use the space-tone modulation, such as the intensity of the radiant energy on the board of a digital electron microscope. ‘,, 、, a source of radiation (such as an infrared light) can be used to provide radiation for the spatial light modulation. The digital light projector (DLP) shown in Figure 7 is used to create a rumor-based image on the back of the heater board. A DLP array is typically controlled by a control person in a feedback loop (not shown). Using the first invention of the invention depicted in Fig. 7, a two-dimensional intensity map is provided on the surface of the heater board to form a spatially varying > JDL degree distribution on the wafer. . In one embodiment, the heater board includes a resistive heating element in addition to a material that is provided by the lamp and that utilizes DL to conduct heat radiation to the heater plate. Therefore, the lightning force, the electric heater and the radiant heater element can be used to provide a batch system for the temperature distribution of the heating plate. The combination of radiation and resistance heating provides a design that is thicker than the traditional heater plate. In a particular embodiment, the resistive heating element (which may be provided in a segmented design) has caused the twisted boundary soil to be at an operating temperature and then based on DLP. Fortunately, the pixel is shot, and the temperature is distributed. The pixel-based ^f, &s' provided by the embodiment of Figure 7 can be combined with the heater design discussed above. Those skilled in the art will understand many variations, modifications 32 200818259 and alternatives. An adjustable heat sink mechanism can be physically attached to the heater plate (e.g., a bake plate) to spatially alter the heat dissipation of the heater plate. As a consistent example, some independently controllable steel pipe networks containing liquids (such as water, oil, and the like) can be used to change space heat dissipation. In accordance with another embodiment of the present invention, a method and system for controlling the gap between a wafer and a pedestal can be used to provide thermal control in a guided lithography tool application. These methods and systems include the use of an electrostatic chuck (E-chuck). U.S. Patent Application Publication No. 2006/0238954 (published on Oct. 26, 2006, entitled "Electrostatic Chuck for a Guided Hot Plate", which is incorporated herein by reference in its entirety) The chuck provides an additional description. It should be noted that the use of an electrostatic chuck can cause the wafer to be flattened to the surface of the chuck or the base, reducing the non-uniformity of the gap between the wafer and the base. In another embodiment, physically separate heater zones (e.g., in a toroidal configuration, in a qUadrant_based configuration, and the like) provide independently adjustable base height. Therefore, the gap between the wafer portion and the base can be changed by modifying the height of the single base portion. In another embodiment, the back air pressure can be spatially varied to maintain a controllable gap between the dome and the base. Typically, the back air pressure provides a conductive medium that conducts heat between the base and the wafer. In a particular embodiment, the air pressure is reduced at the selected portion of the base to provide a smaller gap between the wafer and the base. Alternatively, locally increase the pressure, & local force is spread between the wafer and the base. The combination of back pressure and thinner heaters is used in certain embodiments. 33 200818259 Figure 8 is a simplified schematic diagram showing the surface of an adjusted heater in accordance with an embodiment of the present invention. In the embodiment shown in Fig. 3, the surface of the heater is curved upward in the center of the base. Of course, in other embodiments, the bend is centered downward, or varies across the surface of the base, partially curved at some locations, downward at other locations, and unchanged at other locations. In a particular embodiment, the uneven variations in the wafer are measured and a variable arc is introduced into the pedestal to conform to variations in the wafer. Thus, the gap between the wafer and the heater is essentially a constant as a function of position (i.e., di = d2 = d3). Embodiments of the present invention provide methods and systems for heating wafers in a module of a guided lithography tool. Figure 9 is a simplified schematic diagram of an apparatus for introducing a heated gas into a torrefaction chamber in accordance with an embodiment of the present invention. As shown in Fig. 9, a showerhead having a certain number of holes is provided on the surface relative to the wafer. A heated gas (e.g., nitrogen) diffuses into the chamber through a hole in the showerhead. In Fig. 9, the flow rate of the heating gas is indicated by the symbols Qi, Q2, Q3 and Q〆, Q2f, and Q3·. In a specific embodiment, the flow rate is symmetrical (i.e., Qi = Q i '), although this invention does not require this symmetry. In some embodiments, the flow rates can be controlled such that the flow rate varies as a function of radius. Therefore, less hot gas flow is provided at the portion of the substrate having a higher temperature. In a particular embodiment, for radial mode control, uniform evaporation from the substrate as a function of position can be provided. Embodiments of the present invention provide a combination of both a heated base and a heated gas stream that passes through the showerhead. Further, a combination of methods and systems as described in greater detail throughout the specification of 34 200818259 is provided in accordance with an embodiment of the present invention. In addition to the showerhead on the surface of the wafer, a heated showerhead with fluid jets can be used on the underside of the base. The gap between the top of the wafer and the heated showerhead can be varied to control heating rate and uniformity. Many variations, modifications, and alternatives will be apparent to those skilled in the art. Embodiments of the present invention employ a conduction process to provide thermal control of the lithography tool. For example, in one embodiment, a gas is directed into the back of the wafer to heat the wafer. In a specific embodiment, the use of the

The porous plug of the substrate provides heating and/or cooling of the gas to the back of the substrate. The number, location, size and similar characteristics of the porous plug are selected for a controlled distribution of back gas. In a particular embodiment, the distribution of the back gas is uniform and a function of position, and in other embodiments, the distribution varies depending on the particular application. In another embodiment, a chamber is provided in the base to allow for uniform distribution of back gas. Embodiments of the Invention The porous plug or channel described above provides two gas streams toward and away from the wafer surface. Another embodiment of the present invention utilizes a force including a "hot pixel" array, and a benefit plate. In US Patent Application Publication No. (10) No. 41 (published on January 4, 2007, Plate), the entire text In the description of the cited party, the name "Scalable Uniform Thermal $ is incorporated in the present invention" has an additional aspect for the thermal pixel in an embodiment, using the emissivity of the plane to ensure that the position is heated as a positional example. a function to heat the wafer and modify the uniform heating of the wafer table function. In other variations, a curved wafer 35 200818259 is uniformly heated. In one embodiment, heat is applied to the back of the base. A fuel cell array to heat the base. For example, a fuel cell that consumes hydrogen and oxygen to produce water will generate heat that contributes to the heating of the base. The flow rate of material supplied to the fuel cell can be controlled to achieve the required heat generation and Related base heating. In some embodiments, the size, location, and similar properties of the fuel cell are selected to provide uniform heating as a function of the position of the base. The advantage of a fast system response time.

Embodiments of the present invention provide several methods and systems for quenching wafers. In general, it is desirable to provide fast and uniform wafer temperature quenching during certain semiconductor processes. For example, an adjustable heat sink can be attached to the back of the heater to provide wafer quenching. By way of example only, a copper tube or other thermally conductive material may be provided in thermal contact with the base to rapidly cool the heated base. In another embodiment, the gas stream is directed in a tip attached to the back of the base to provide a quenching action. Moreover, the tube is quenched with a conduit coupled to the back of the base and filled with a heat transfer stream (e.g., "Galden"). In a specific embodiment, the catheter is attached directly to the back of the base. Figure 10A is a catheter coupled to a base in a first position in accordance with an embodiment of the present invention. As shown in Fig. 10A, the cylindrical cylinder supports a heat transfer fluid, and a piston (p 1u n se Γ) is formed at the bottom of the cylindrical container. A cooling plate that is in contact with a cooler (not shown). In another embodiment, the bottom of the conduit contains a cold plate. Figure 10 is a simplified schematic diagram of a catheter coupled to a base in a second position in accordance with an embodiment of the present invention. As shown in Figure 10

200818259, the piston has moved to a higher level than the first position. The heat transfer fluid is driven out of the columnar container in large quantities to contact the lower portion of the plate. Therefore, the heater board is cooled by being in contact with the heat. The heat transfer fluid shown in Figures 10A and BB is not subjected to a phase change (e.g., from a liquid to a liquid). Of course, in an alternative embodiment, the phase change material piston can be used to return to the cylindrical container after returning to the position shown in Figure 1A. Depending on the application, the heat transfer fluid is cooled to the initial temperature using a cooling plate at the bottom of the cooling piston conduit. Figure 11A is a simplified schematic diagram of a catheter in accordance with an embodiment of the present invention. As shown in Fig. A, during the start of the contact between the ultrasonic transducer and the heat transfer fluid, the liquid is ejected from the cell, as indicated by the dotted line, the lower side of the heater plate. After the heater plate is returned to the pool by the cooling liquid, the liquid passes through again with the cold plate; Figure 1 1B illustrates a simplified schematic diagram coupled to the catheter in accordance with an embodiment of the present invention. As shown in FIG. 1B, the liquid is sprayed on the underside of the heater plate, so that the specific application to the heater plate is different, and the voltage applied to the pump can be constant or can be chord, triangle, pulse, etc. Wait). As in the circulation process shown in Fig. 11A, the liquid is cooled by the cold plate, heat is removed from the heater plate, and cooled again by the cold plate. Differently, a non-phase change material or a phase change material can be utilized. Skilled artisans will appreciate many variations, modifications, and alternatives. Two locations. In the case of the heat transfer fluid, the gas is returned. Transfer the fluid or handle to the degree. To a base, an ultrasonic wave. In supersonics, and with quenching. In the order. A pump of a base is quenched. A simplification of an integrated thermal control system in accordance with one embodiment of the present invention, as shown in Figure 12, for example, in the context of a contact period, in the context of a particular application area. Multiple thermal control technologies and systems are integrated into a single unit. By way of example only, a combination of baking/quenching plates is integrated with a multi-zone base. Referring to Figure 12, a heater/cooling plate includes a plurality of A conductive structure that is adjustable to provide heat input. In a particular embodiment, liquid enters the heater/cooling plate at orifice 1210 and exits at orifice 1 2 1 . Of course, a resistive heater can be used to replace the liquid. The heating/cooling plate may be heated or cooled depending on the particular application. Those skilled in the art will appreciate many variations, modifications, and alternatives. A heat transfer liquid (e.g., G a 1 den) is placed In the device in which the heater/cooling plate is in thermal contact, a pump (eg, a piezoelectric pump) is provided to contact the heat transfer liquid and to spray the heat transfer liquid on the side of the base, thereby depending on the particular application The base is heated or cooled. After returning to the pool, the heat transfer liquid is again returned to the temperature associated with the heater/cooling plate by interaction with the plate. As shown in Figure 12, depending on the particular application 'The voltage applied to the piezoelectric pump can be constant or variable (eg sinusoidal, triangular, pulsed, etc.). In applications where the heater/cooling plate is used for quenching, during the cycle process The heater/cooling plate cools the heat transfer liquid, removes heat from the base during contact, and is again cooled by the heater/cooling plate. A non-phase change material or a phase change material may be utilized depending on the particular application. Those skilled in the art will appreciate many variations, modifications, and alternatives. Referring to Figure 12, the pump structure also includes a thermal element that can be used to modulate the temperature of the heat transfer liquid. The thickness of the base varies as a function of position. The thermal insulation between the segments is provided by 38 200818259. As shown in Figure 12, the thickness of the base in a first portion is dl, and the thickness in a second portion is d2, which is less than dl. The base includes a plurality of zones defined as radial, circumferential, or combinations thereof, etc. The reduced thermal conductivity in the second portion (thickness d2) results in local thermal isolation between the zones, such as The temperature in the center of the circle is maintained at a temperature less than the temperature of the peripheral portion of the wafer. Although only two regions are shown in Fig. 7, this figure is for illustrative purposes only and is not intended to limit the scope of the embodiments of the invention. Additional heating or cooling elements (e.g., electrical resistance heaters (not shown)) are coupled to the base or integrated into the base to provide zone-based additional control of the base temperature profile. Those skilled in the art will appreciate many Variations, modifications, and alternatives. Moreover, some embodiments of the present invention provide a combination base. For example, an embodiment utilizes a two-part heater plate including a base and a thermal element, with a gap of a predetermined size Separated from the lower surface of the base. The gap can be adjusted under the control of the control loop to change the thermal conductivity between the base and the thermal element. By way of example only, the thermal element can include a hole suitable for receiving liquid, a resistive heater, a thermoelectric element, combinations thereof, and the like. A water jet provides water vapor to the holes of the thermal element to heat the thermal element during the wafer baking process. During some processes, a gap of a predetermined size is changed to provide temperature control during the process. For example, during a post exposure bake (PEB) process, the gap can be modulated as a function of time to alter the heat transfer between the thermal element and the submount and subsequently change the wafer temperature during the PEB process. During the set point change operation, the gap between the heat element and the base 39 200818259 can be reduced to quickly change the temperature of the base. In a specific embodiment, the thermal element is brought into contact with the base and the gap is reduced to zero. Figure 13 is a simplified diagram of another system for quenching an adder plate in accordance with an embodiment of the present invention. As shown in Fig. 3, the cold "sponge body" is supported in a bowl-shaped container in which a source of cooling liquid (e.g., DI water) is supplied. The sponge is made of an elastic material and has the ability to absorb liquid. The bowl container is vertically movable with the sponge body in contact with the underside of the base to quench the base and to quench the wafer supported by the base. In Figure 13, a polythene sublayer is bonded to the back of the base and a seal is established between the support and the polyimide layer using a loop. A cooling body is provided to the cold sponge, which in some embodiments is a circulation of the cooling liquid. In other implementations, the sponge is periodically contacted with a cold liquid or provided with a stream of cold liquid. Those skilled in the art will appreciate many variations and modifications. A space is provided between the outer edge of the disk and the support such that any liquid or vapor at the interface of the sponge/polyimine layer is removed. In one embodiment, the DI water in the sponge is evaporated and the water flows to the vents as shown in Figure 13. While the invention has been described with respect to the specific embodiments and specific embodiments thereof, it is understood that other embodiments may also fall within the spirit and scope of the invention. The scope of the invention should be determined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [Simplified plan view of a lithography tool according to an embodiment of the present invention is shown in FIG. 2 when the heat is extracted to make the amine and the liquid transfer and 40 200818259. FIG. 1 is a simplified plan view of the lithography tool according to an embodiment of the present invention; A simplified perspective view of an integrated thermal unit in accordance with an embodiment of the present invention; FIG. 3A is a top plan view of an example of a multi-zone bake plate in accordance with an embodiment of the present invention, the multi-zone bake plate comprising six Different independent electric heating zones; Figure 3B is a simplified illustration of a multi-zone heater plate illustrating a weighted average calculation used in a particular embodiment of the invention; Figure 4A illustrates an embodiment in accordance with the invention A simplified flow chart of a method of controlling wafer CD distribution; FIG. 4B is a simplified flow chart illustrating another method of controlling wafer CD in accordance with an embodiment of the present invention; FIG. 5A is a first example photoresist Simplified cross-sectional view of temperature sensitivity of Resist 1; Figure 5B is a simplified graph of temperature sensitivity of a second example photoresist Resist 2; Figure 6 is a simplified cross-sectional view of multi-zone heater plate according to an embodiment of the present invention Figure 7 is a simplified cross-sectional view of a multi-zone heater panel in accordance with another embodiment of the present invention; Figure 8 is a simplified schematic diagram of an adjustable heater surface in accordance with an embodiment of the present invention; A simplified schematic diagram of an apparatus for introducing heated gas into a torrefaction chamber, in accordance with an embodiment of the invention; 41 200818259 FIG. 10A illustrates a coupling to a base at a first location in accordance with an embodiment of the present invention ( A simplified schematic diagram of a pedestal; a 10B diagram illustrating a simplified schematic of a vessel that is spliced to a base in a second position, in accordance with an embodiment of the present invention; 1A illustrates a simplified schematic diagram of a catheter coupled to a base (pdesta 1) in accordance with another embodiment of the present invention; FIG. 11B illustrates a coupling to a base (pdesta) in accordance with yet another embodiment of the present invention 1) a simplified schematic diagram of a conduit; FIG. 2 is a simplified schematic diagram of an integrated thermal control system in accordance with an embodiment of the present invention; and a third embodiment illustrates an embodiment of the present invention for quenching Plus simplified schematic diagram of another system of the heater plate. [Main component symbol description] 1 Manufacturing interface block 2 BARC block 3 Resistive coating block 4 Development process block 5 Scanning interface block 20 spacer 22 spacer 3 0, 3 1, 3 2, 3 3, 3 4, 3 5 substrate carrier portion 100 rail-type lithography tool 101, 102, 103 transfer mechanism 42 200818259 11 3 substrate transfer mechanism 11 4 movable base Π 5 robot arm 124 bottom coating processor 126 rotating chuck 128 coating nozzle

122, 132, 141, 142 Thermal Process Tower 1 3 4 Resistor Coating Processor 1 3 6 Rotating Chuck 1 3 8 Coating Nozzle 144 Development Processor 146 Rotating Chuck 1 4 8 Nozzle 154 Transfer Mechanism 154A Movable Base Seat 154B Clamping Arm 160 Controller 210 Integrated Thermal Unit 215 Panel 220 Baking Station 230 Transfer Shuttle 232A, 232B Lifting Tip Groove 240 Cooling Plate 250 Vertical Actuator 43 200818259 3 1 0 Baking Sheet 312ι · 3126 Independent Heater Zone 3 1 -3 146 temperature sensor 340 boundary area 330-336, 366-370, 350, 352, 360, 362, 364, 372, 3 5 6 measuring point 400 method

4, 404, 406, 408, 410, 412, 414, 416 steps, step 430 methods 432, 434, 436, 438, 440, 442 Step 44

Claims (1)

200818259 X. Patent Application Range: 1. A method for controlling wafer critical dimension (CD) uniformity in a rail-type lithography tool, the method comprising: acquiring a CD image of a wafer, the CD image comprising a plurality of CDs At a data point, the CD data points are associated with a multi-zone heater geometry, wherein the multi-zone heater includes a plurality of heater zones; and one of the heater zones is determined based on one or more of the CD data points a CD value of the first heater zone; calculating a difference between the CD value determined by the first heater zone and a target CD value of the first heater zone; based in part on the calculated difference and deposition Sensing a photoresist on the wafer to determine a temperature change of the first heater zone; partially modifying a temperature of the first heater zone according to the temperature change 2. The method of claim 1, further comprising repeating the obtaining, determining a CD value, calculating, determining a temperature change, and modifying the step one or more times. 3. The method of claim 2, wherein the wafer CD is repeatedly modified to obtain a wafer CD that falls within a predetermined value of a target wafer CD. 4. The method of claim 1, wherein the CD 45 200818259 image of the wafer is obtained using an optical CD (OCD) precision measurement tool. 5. The method of claim 1, wherein the CD data points comprise data points having a number greater than or equal to the heater zones. I 6. The method of claim 5, wherein the number of the CD data points is greater than or equal to 29. 7. The method of claim 6, wherein the number of C D data points is greater than or equal to 66. 8. The method of claim 1, wherein the temperature sensitivity is related to a functional relationship between CD and temperature. 9. The method of claim 1, wherein determining the CD value comprises averaging CD data points overlying the first heater zone. The method of claim 1, wherein determining the CD value comprises calculating a weighted average comprising covering a first set of CD data points of the first heater zone and not covering the A second set of CD data points of the first heater zone. 1 1. A method of controlling a CD during a semiconductor wafer process, the method comprising: 46 200818259 measuring a CD distribution of a first semiconductor wafer; comparing the measured CD distribution with a target CD distribution; determining that the measured CD distribution is not within a pre-limit of the target CD distribution; Determining a step of calculating an offset for a region of a multi-zone bake plate; modifying a temperature set point of the region of the multi-zone bake plate; and processing a second semiconductor wafer 1 using the modified temperature set point 2. The method of claim 11, further comprising: determining, according to the determining step, a second temperature offset for a second zone of the multi-zone bake plate; and modifying the multi-zone bake plate The second temperature setting of one of the second zones. The method of claim 11, wherein the CD distribution is obtained by at least one of a CD or a CD-SEM precision measuring tool. 1. The method of claim 11, wherein the number of CD distribution points of the CD distribution package is greater than or equal to the heater target of the multi-zone baking plate. The method of determining that the measurement distribution is not within a predetermined tolerance of the target CD distribution comprises calculating an average, the weighted average comprising covering a first set of CD data S of the region to a constant temperature. Use the CD weighting of the number of zones; to 47 200818259 and a second set of CD data points that do not cover the zone. 16. A track-type lithography tool comprising: a manufacturing interface configured to receive a wafer; a process module coupled to the manufacturing interface, the process module comprising: a plurality of coating stations; a developing station; and a process unit comprising a multi-zone baking plate, wherein the multi-zone baking plate comprises a plurality of heater zones, and has a feature of a multi-zone baking plate geometry, and a controller Providing a CD map for receiving the wafer, the CD map comprising a plurality of CD data points associated with the multi-zone baking sheet geometry, the controller including a computer-reading medium for storing a plurality of instructions Controlling a data processor to modify a wafer CD distribution, the instructions comprising: causing the data processor to determine one of the first heater zones of one of the heater zones based on one or more of the CD data points An instruction of the CD value; causing the data processor to calculate an instruction of the first heater zone to determine a difference between the CD value and a target CD value of the first heater zone; causing the data processor to partially Calculate the difference a temperature sensitivity of a photoresist on the wafer, an instruction to determine a temperature change of the first heater zone; and causing the data processor to modify the first heater zone based in part on the temperature change A temperature command. 48 200818259 1 7. The rail-type lithography tool of claim 16 wherein the CD image of the wafer is obtained using a precision measuring tool integrated in the guided lithography tool. 1 . The rail-type lithography tool of claim 16, wherein the CD map of the wafer comprises a number of CD data points greater than or equal to the number of heater zones of the multi-zone baking sheet. 19. The rail-type lithography tool of claim 16, wherein the determined CD value of the first heater zone is determined by calculating a weighted average comprising covering one of the first heater zones The first set of CD data points and the second set of CD data points that are not covered by the first heater zone. The guide lithography tool of claim 19, wherein the second set of CD data points are overlaid in a boundary region adjacent to the first heater zone. 49