200817708 九、發明說明： 【發明所屬之技術領域】 本發明係為一種電流感測器測試電路，尤指一種藉由 設計一個測試電路來產生近似步階的電流波开>，以供測試 電流感測器的響應時間。 【先前技術】 按，應用於電力或電子電路的電流感測器（current sensor)中，利用霍爾元件（Hallelement)製成的電流感 測器最為常見，它可以量測直流、交流及複合性波形，並 且有絕緣的隔離作用、低功率損失及小型輕量化的尺寸， 可量測的電流安培值很高。在量測精度方面，有良好的線 性度、低溫度漂移以及快速的響應時間，響應時間達到微 秒⑽）等級，頻寬約在數1〇k HZ至胃1〇〇k HZ之間。基於以 上優點，霍爾型電流感測器已大里使用於工業控制的領 域，做為電流之顯示、調整及控制或過電流保護，例如變 頻器及三相伺服馬達驅動器的f出相位電流控制，不斷電 系統以及其他以電池絲力的設^等。 霍爾型電流感測器的結構簡單，國内有數豕電子公司 製造生產，由於電流感測器的性此影響其應用甚钷，製造 廠商必須對其產品的性能進行多樣的測試’電流感測器穩 態性能測試所需的設備較簡易’但目前市面上尚未有廠商 提供動態性能測試所需的儀器設備，因此必須自行研發。 電流感測器動態性能測試的規格在於儀器必須產生/ 個步階的電流波形，以做為電流感測器量測的參考指標， 5 200817708 步階電流波形必須在極短的時間内由0安培快速上昇至電 流感測器最大的量測安培數（例如·· 60安培由於實務上 不可能產生一個理想的步階電流波形’但測試的電流波形 以越接近步階波形越好。 電流感測器量測此步階電流波形的電流’並且輸出一 個正比於量測電流的電壓波形，因電流感測器的響應頻寬 有限，輸出的電壓波形不會是理想的步階波形，電壓波形 以較慢的速度由0V上昇至最高值，電壓波形由10%上昇至 90%所需的時間定義為電流感測器的上昇時間（rise t ime)，上昇時間和電流感測器的響應頻寬成反比，是電流 感測器響應速度的重要指標。 如第5圖所示，為習用之M0SFET驅動測試電路，其係 應用金屬氧化半導體場效電晶體（簡稱為M0SFET)做為開 關切換，並且信號產生器輸出方波電壓以驅動該M0SFET電 路’其通過負載電阻Rl的電流大小約正比於驅動電壓，如 笫6圖所示，其係為輸入與輸出波形圖，其上部為輸入之 、步階波形驅動電壓，下部為輸出的電流波形，可以看出電 流波形上昇速度較慢於驅動電壓，上昇時間約為5叩。 然而，習用之M0SFET驅動測試電路，其應用 M0SFET做為開關切換時，由輸入的驅動電壓來控制肋&et 輸出的電流大小，若驅動電壓為步階波形，則mgsfet輸出 的電流則為一近似的步階波形，但此電路輪出 時間過長，不能符合電流感測器之測試 从机、幵 而水。故，如何改 進習用M0SFET驅動測試電路之輸出電流波形的上昇時間 6 200817708 實為本發明研究之重點。 【發明内容】 本發明之主要目的，在於解決上述的問題而提供 電流感測器測試電路，其測試電路係利用一補償電路 - M0SFET電路緑生近够階的電流波形，以供測試電^ 感測器動態響應的上昇時間。由於步階電流波形的最大= 流可達數十安培’本電略係採用金屬氧化半導體場效電: II (簡稱為，ET)功率電子元件做為電流的開關元件Μ 且流經M0SFET的電流大小係受驅動電壓所控制，步階之驅 動鼋壓可以產生近似步階的電流波形，而輸入信號經補償 電路的補償仙，㈣電⑹皮形的上昇_可達到微秒等 級的要求。 為達前述之目的，本發明係包括·· 一補償電路，其係為一相位超前（phase—lead)電路， 該補償電路具有一運算放大器，該運算放大器包括有一非 反向輸入端、一反向輸入端及一輸出端，該反向輸入端係 I 串聯一補償電阻而連結於該輸出端，另一第一電阻並聯一 補償電容而形成該補償電路之一輸入節點，該第一電阻並 聯該補償電容後再串聯一第二電阻而連結於該反向輸入 端’該非反向輸入端係連結至一接地線； 一 M0SFET電路，係包括一 M0SFET功率元件、一電源 供應器及一負載電阻，該M0SFET功率元件之閘極連結於該 補償電路之輸出端，該M0SFET功率元件之汲極連結於該電 源供應器之正極端，該M0SFET功率元件之基極連結於其源 7 200817708 極且串聯讀負载電阻 結該接地線； 連結該電源供應器之負極端並、 一信號產生器，係且 ’該信號輪入端係連心一信號輪入端、-信詭楱地 號接地端則連結於該如2補償電路之輸人節點，而^ 以供該信號產生器將:泉’以形成該測試電路的％路； 至該補償電路之輪Μ點波電壓經由該信號輸人蠕而輪人200817708 IX. Description of the Invention: [Technical Field] The present invention relates to a current sensor test circuit, and more particularly to a test circuit for generating an approximate step current wave opening > for test current The response time of the sensor. [Prior Art] In a current sensor applied to a power or electronic circuit, a current sensor made of a Hall element is most common, and it can measure DC, AC, and composite. Waveforms, with insulation isolation, low power loss, and small, lightweight size, measure current amperage is high. In terms of measurement accuracy, there is good linearity, low temperature drift and fast response time. The response time is in the order of microseconds (10)), and the bandwidth is between 1 〇k HZ and 1 〇〇k HZ. Based on the above advantages, Hall-type current sensors have been used in industrial control fields as display, adjustment and control of current, or overcurrent protection, such as f-phase current control of inverters and three-phase servo motor drivers. Uninterruptible power system and other battery-powered devices. The Hall-type current sensor has a simple structure and is manufactured and manufactured by several electronic companies in China. Due to the influence of the current sensor, the manufacturer must perform various tests on the performance of the product. The equipment required for steady-state performance testing is relatively simple', but there are currently no manufacturers on the market that provide the equipment needed for dynamic performance testing, so it must be developed by itself. The current sensor dynamic performance test specification is that the instrument must generate / step current waveform as a reference for current sensor measurement, 5 200817708 step current waveform must be 0 amp in a very short time Fast rise to the maximum measurement amperage of the current sensor (for example, 60 amps is practically impossible to produce an ideal step current waveform) but the current waveform of the test is as close as possible to the step waveform. Current sensing The current of the step current waveform is measured and a voltage waveform proportional to the current is output. Because the response bandwidth of the current sensor is limited, the output voltage waveform is not an ideal step waveform, and the voltage waveform is The slower speed rises from 0V to the highest value, and the time required for the voltage waveform to rise from 10% to 90% is defined as the rise time of the current sensor, the rise time and the response bandwidth of the current sensor. In inverse proportion, it is an important indicator of the response speed of the current sensor. As shown in Figure 5, it is a conventional MOSFET driving test circuit, which uses a metal oxide semiconductor field effect transistor ( Called MOSFET, as a switch, and the signal generator outputs a square wave voltage to drive the MOSFET circuit. The current through the load resistor R1 is approximately proportional to the drive voltage, as shown in Figure 6, which is the input and output. The waveform diagram, the upper part is the input, the step waveform drive voltage, and the lower part is the output current waveform. It can be seen that the current waveform rises at a slower speed than the drive voltage, and the rise time is about 5 叩. However, the conventional MOSFET drive test circuit When the MOSFET is used as the switch, the input drive voltage is used to control the current output of the rib & et. If the drive voltage is a step waveform, the output current of the mgsfet is an approximate step waveform, but this The circuit takes too long to meet the test and the water of the current sensor. Therefore, how to improve the rise time of the output current waveform of the conventional M0SFET drive test circuit is the focus of the research. The main purpose of the present invention is to provide a current sensor test circuit for solving the above problems, and the test circuit is advantageous. Use a compensation circuit - M0SFET circuit green near-order current waveform for testing the rise time of the dynamic response of the sensor. Since the maximum current of the step current waveform = tens of amperes can be used Metal Oxide Semiconductor Field Effect: II (abbreviated as ET) power electronic components as the current switching element 且 and the current flowing through the MOSFET is controlled by the driving voltage, and the driving pressure of the step can produce an approximate step. The current waveform, and the input signal is compensated by the compensation circuit, (4) the electric (6) skin shape rise _ can reach the microsecond level requirement. To achieve the foregoing purpose, the present invention includes a compensation circuit, which is a phase A phase-lead circuit, the compensation circuit has an operational amplifier including a non-inverting input terminal, an inverting input terminal, and an output terminal, wherein the inverting input terminal is connected in series with a compensation resistor At the output end, another first resistor is connected in parallel with a compensation capacitor to form an input node of the compensation circuit. The first resistor is connected in parallel with the compensation capacitor and then connected in series with a second resistor. The non-inverting input terminal is coupled to a ground line; a MOSFET circuit includes a MOSFET power component, a power supply, and a load resistor, and the gate of the MOSFET power component is coupled to the MOSFET An output end of the compensation circuit, a drain of the MOSFET power element is coupled to a positive terminal of the power supply, a base of the MOSFET power element is coupled to a source 7 200817708 pole, and a series read load resistor is coupled to the ground line; a negative terminal of the supplier, a signal generator, and 'the signal wheel-in end is connected to a signal wheel-in terminal, and the signal-to-signal ground terminal is connected to the input node of the 2 compensation circuit. And ^ for the signal generator to: "spring" to form the % circuit of the test circuit; to the compensation circuit, the rim point wave voltage is passed through the signal
本毛月之上述及其他 實施例之詳細說明盥附 八炎”"不難攸卜述戶斤〜 ，獲得深入了解。 :然，本發明在某些另件上，或另件之安排上容許有 所不5 #所選用之實施例則於本說明書巾，予以 說明，並於附圖中展示其構造。 砰、、、曰 【實施方式】 請參閱第1圖，圖中所示者為本發明所選用之實施例 結構，此僅供說明之用，在專利申請上並不受此種結構之 限制。 本實施例之電流感測器測試電路，該測試電路係包括·· 一補償電路1 ,其係為一相位超前（phase-lead)電 路，該補償電路1具有/運算放大器1 1，該運算放大器 1 1包括有一反向輸入端1 1 1、一非反向輸入端1 1 2 及一輸出端1 1 3，該反向輸入端1 1 1係串聯一補償電 阻1 2而連結於該輸出端1 1 3，另一第一電阻1 3並聯 一補償電容1 4而形成該補償電路1之一輸入節點1 5 ’ 8 200817708 該第一電阻13並聯該補償電容14後再串聯一第二電阻 1 6而連結於該反向輸入端1 1 1，該非反向輸入端1 1 2係連結至一接地線3 8 ; 一 M0SFET電路2，係包括一 M0SFET功率元件2 1、 一電源供應器22及一負載電阻23,該M0SFET功率元件 2 1之閘極連結於該補償電路1之輸出端1 1 3，該 M0SFET功率元件2 1之汲極連結於該電源供應器2 2之正 極端2 2 1，該M0SFET功率元件2 1之基極連結於其源極 且串聯該負載電阻2 3，而連結該電源供應器2 2之負極 端2 2 2並連結該接地線3 8 ; 一信號產生器3，係具有一信號輸入端3 1、一信號 接地端3 2，該信號輸入端3 1係連結於該補償電路1之 輸入節點1 5，而該信號接地端3 2則連結於該接地線3 8，以形成該測試電路的迴路，以供該信號產生器3將一 方波電壓經由該信號輸入端3 1而輸入至該補償電路1之 輸入節點1 5。 另外，茲發現純粹只有M0SFET功率元件之測試電路， 其輸入步階波形的驅動電壓與輸出電流的關係近似於一個 一階系統，但此一階系統的時間常數過大，需要一補償電 路作補償，因此有本發明測試電路之產生。 本發明之技術手段在於，利用一運算放大器1 1電路 實現設計成該補償電路1，且以此補償電路1之輸出端1 1 3作為M0SFET電路2之M0SFET功率元件2 1之閘極的 輸入，所以設計者只需設計一個簡單的補償電路1就可達 9 200817708 成要求’此補償電路1的轉移函數只有一個極點和一個零 點’且補償電路1與M0SFET電路2串聯，所設計之補償電 路1的零點剛好可消去M0SFET電路2的極點，串聯電路的 轉移函數則成為以補償電路1的極點為極點的一階系統， 因此補償電路1可改變原來只有M0SFET電路2的時間常 數’且改進M0SFET電路2之輸出電流波形的上昇時間。 應用實際電路實化本發明之電路設計，以進行有補償 之M0SFET電路輸出電流波形的上昇時間之測試，另外 M0SFET電路再串聯一電流感測器（LEM Ηγ2〇—ρ)，以測試 電流感測器對於M0SFET電路之輸出電流波形之上昇時間 的影響。 如第2圖所示，係為單獨補償電路的測試結果，上部 為信號產生器的輸出波形，為一完美的階梯波形，下部圖 形顯示補償電路的輸出為一個有初期脈衝的階梯波形，此 脈衝可補償M0SFET電路，以加快輸出電流波形之上昇時間 〇 如第3圖所示，係為串聯補償電路之M〇sFET電路的測 試結果，上部為補償電路輸出的驅動電壓波形，下部為 M0SFET電路的輸出電流波形，上昇時間約為2|LIS，並請參 閱第6圖，可以看出其上昇時間約為5叩，足以顯示出所 設計的補償電路能有效改善輸出電流波形的上昇時間。 如第4圖所示，為本發明之M0SFET電路串聯一個電流 感測裔（LEM HY20-P)的測試結果，上部為電流感測器的量 測輸出波形’下部為M0SFET電路的電流輸出波形，其上羿 200817708 時間約為8ps，發現串聯電流感測器造成M0SFET電路輸出 電流波形的上昇時間變長，其原因在於電流感測器等效於 一電感器。 故，由上述實施例的說明可知，本發明之優點係利用 一補償電路連結一 M0SFET電路來產生近似步階的電流波 形，以供測試電流感測器動態響應的上昇時間。由於步階 電流波形的最大電流可達數十安培，本電路係採用金屬氧 化半導體場效電晶體（簡稱為M0SFET)功率電子元件做為 電流的開關元件’且流經M0SFET的電流大小係受驅動電壓 所控制，步階之驅動電壓可以產生近似步階的電流波形， 而輸入信號經補償電路的補償作用，步階電流波形的上羿 時間可達到微秒等級的要求。 以上所述實施例之揭示係用以說明本發明，並非用以 限制本發明，故舉凡數值之變更或等效元件之置換仍應隸 屬本發明之範疇。 由以上詳細說明，可使熟知本項技藝者明瞭本發明的 確可達成刖述目的’實已符合專利法之規定，爰提出專利 申請。 【圖式簡單說明】 弟1圖係本發明之電路架構示意圖 第2圖係本發明之信號產生器與單_電路之輸出 波形對照圖 第3 11 200817708 第4圖係電流感測器量測輸出與本發明之M0SFET電 路之輸出電流波形對照圖 弟5圖係習用之M0SFET驅動測試電路不意圖 第6圖係習用之M0SFET驅動測試電路之輸入與輸出 波形圖 【主要元件符號說明】 (本發明部分） 補償電路1 運算放大器11 反向輸入端1 1 1 非反向輸入端11 輸出端1 1 3 補償電阻12 第一電阻1 3 補償電容14 輸入節點1 5 第二電阻1 6 M0SFET 電路 2 M0SFET功率元件2 電源供應器2 2 正極端2 2 1 負極端2 2 2 負載電阻2 3 信號產生器3 信號輸入端3 1 信號接地端3 2 接地線3 8 12The detailed description of the above and other examples of this month is attached to the "Yanyan" "not difficult to clarify the households~, get a deeper understanding.: However, the invention is on some parts, or on the arrangement of the parts. Examples of selected embodiments are described in the specification, and the structures are shown in the drawings. 砰, 、, 曰 [Embodiment] Please refer to Figure 1, which is shown in the figure. The structure of the embodiment selected for use in the present invention is for illustrative purposes only and is not limited by such a structure in the patent application. The current sensor test circuit of the embodiment includes a compensation circuit. 1 , which is a phase-lead circuit, the compensation circuit 1 has an / operational amplifier 1 1 , the operational amplifier 1 1 includes an inverting input terminal 1 1 1 , a non-inverting input terminal 1 1 2 And an output terminal 1 1 3, the inverting input terminal 1 1 1 is connected in series with a compensation resistor 12 and coupled to the output terminal 1 1 3, and the other first resistor 13 is connected in parallel with a compensation capacitor 14 to form the compensation. Circuit 1 one input node 1 5 ' 8 200817708 The first resistor 13 is connected in parallel to the compensation The capacitor 14 is further connected in series with a second resistor 16 to be connected to the inverting input terminal 112, and the non-inverting input terminal 1 1 2 is coupled to a ground line 38; a MOSFET circuit 2 includes a MOSFET power. a device 2 1 , a power supply 22 and a load resistor 23 , the gate of the MOSFET power device 2 1 is connected to the output terminal 1 1 3 of the compensation circuit 1 , and the drain of the MOSFET power device 2 1 is connected to the power source The positive terminal 2 2 of the supplier 2 2 is connected to the source of the MOSFET power device 2 1 and connected to the load resistor 23 in series, and the negative terminal 2 2 2 of the power supply 2 2 is connected and connected A signal generator 3 has a signal input terminal 3 1 and a signal ground terminal 3 2 . The signal input terminal 3 1 is coupled to the input node 15 of the compensation circuit 1 , and the signal is grounded. The terminal 3 2 is connected to the grounding line 38 to form a loop of the test circuit, so that the signal generator 3 inputs a square wave voltage to the input node of the compensation circuit 1 via the signal input terminal 31. In addition, it is found that the test circuit is purely only the MOSFET power component, and its input step The relationship between the driving voltage and the output current is similar to that of a first-order system, but the time constant of the first-order system is too large, and a compensation circuit is required for compensation, so that the test circuit of the present invention is generated. The technical means of the present invention is to utilize An operational amplifier 11 circuit is implemented as the compensation circuit 1, and the output terminal 1 1 3 of the compensation circuit 1 is used as the input of the gate of the MOSFET power device 2 1 of the MOSFET circuit 2, so the designer only needs to design a simple The compensation circuit 1 can reach 9 200817708. The requirement is that the transfer function of the compensation circuit 1 has only one pole and one zero point and the compensation circuit 1 is connected in series with the MOSFET circuit 2. The zero point of the compensation circuit 1 is designed to eliminate the MOSFET circuit 2 The pole of the series circuit becomes the first-order system with the pole of the compensation circuit 1 as the pole. Therefore, the compensation circuit 1 can change the time constant of the original MOSFET circuit 2 only and improve the rise time of the output current waveform of the MOSFET circuit 2. . The actual circuit is used to implement the circuit design of the present invention to test the rise time of the output current waveform of the compensated MOSFET circuit, and the MOSFET circuit is further connected in series with a current sensor (LEM Η γ2 〇 - ρ) to test the current sensing. The effect of the rise time on the output current waveform of the MOSFET circuit. As shown in Figure 2, it is the test result of the separate compensation circuit. The upper part is the output waveform of the signal generator, which is a perfect step waveform. The lower figure shows the output of the compensation circuit as a stepped waveform with an initial pulse. The MOSFET circuit can be compensated to speed up the rise time of the output current waveform. As shown in Fig. 3, it is the test result of the M〇sFET circuit of the series compensation circuit. The upper part is the driving voltage waveform of the compensation circuit output, and the lower part is the MOSFET circuit. The output current waveform has a rise time of about 2|LIS, and please refer to Figure 6. It can be seen that the rise time is about 5 叩, which is enough to show that the designed compensation circuit can effectively improve the rise time of the output current waveform. As shown in FIG. 4, the MOS circuit of the present invention is connected in series with a current sensing person (LEM HY20-P) test result, and the upper part is a current sensor's measurement output waveform 'the lower part is the current output waveform of the MOSFET circuit, The time of the last 羿200817708 is about 8ps, and it is found that the series current sensor causes the rise time of the output current waveform of the MOSFET circuit to become longer, because the current sensor is equivalent to an inductor. Therefore, it is apparent from the above description that the advantage of the present invention is to use a compensation circuit to connect a MOSFET circuit to generate an approximate step current waveform for testing the rise time of the current sensor dynamic response. Since the maximum current of the step current waveform can reach several tens of amperes, this circuit uses a metal oxide semiconductor field effect transistor (referred to as M0SFET) power electronic component as a current switching element' and the current flowing through the M0SFET is driven. Controlled by the voltage, the driving voltage of the step can generate a current waveform of approximately step, and the input signal is compensated by the compensation circuit, and the time of the step current waveform can reach the microsecond level. The above description of the embodiments is intended to be illustrative of the invention, and is not intended to limit the scope of the invention. From the above detailed description, it will be apparent to those skilled in the art that the present invention may be made in accordance with the provisions of the Patent Law. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic diagram of a circuit architecture of the present invention. FIG. 2 is a comparison diagram of output waveforms of a signal generator and a single-circuit of the present invention. 3 11 200817708 FIG. 4 is a current sensor measurement output. Compared with the output current waveform of the MOSFET circuit of the present invention, the MOSFET driving test circuit is not intended to be used in the input and output waveforms of the MOSFET driving test circuit of the sixth drawing [main component symbol description] (part of the present invention) Compensation circuit 1 Operational amplifier 11 Inverting input 1 1 1 Non-inverting input 11 Output 1 1 3 Compensation resistor 12 First resistor 1 3 Compensation capacitor 14 Input node 1 5 Second resistor 1 6 M0SFET Circuit 2 M0SFET power Component 2 Power supply 2 2 Positive terminal 2 2 1 Negative terminal 2 2 2 Load resistor 2 3 Signal generator 3 Signal input 3 1 Signal ground 3 2 Ground wire 3 8 12