TW200815568A

TW200815568A - Polishing slurry for low dielectric constant material

Info

Publication number: TW200815568A
Application number: TW95136459A
Authority: TW
Inventors: Jery Guo-Dong Chen; Peter Wei-Hong Song; Judy Jian-Fen Jing; Sunny Chun Xu; Yuan Gu
Original assignee: Anji Microelectronics Co Ltd
Priority date: 2006-09-29
Filing date: 2006-09-29
Publication date: 2008-04-01
Also published as: TWI338037B

Abstract

The present invention provides a polishing slurry for low dielectric constant material. The polishing slurry includes Al-doped silica abrasive and water, and further includes an activator containing NH4+ or quaternary ammonium. The polishing slurry of the invention can promote the polish of low dielectric constant material, such as CDO, TEOS, and SiON, but has no significant effect on tantalum and copper. Therefore, the polishing slurry of the invention can significantly provide selectivity for the polish of the pad, and decrease the defects of the surface of the pad, such as scrapes, erosion, and point erosion.

Description

200815568 秦 ♦ 九、發明說明：【發明所屬之技術領域】本發明係關於一種拋光液，並且特別地，本發明係關於一種用於拋光低介電材料的拋光液。【先前技術】在積體電路製造中，互連技術的標準不斷提高，一層上面又沉積一層，使得在襯底表面形成了不規則的形貌。現有技術中使馨用的一種平坦化方法係化學機械拋光(CMP)，CMP技術就是使用一種含磨料的混合物和拋光墊去拋光一積體電路表面。在典型的化學機械拋光方法中，將襯底直接與旋轉拋光墊接觸，用一載重物在襯底背面施加壓力。在拋光期間，拋光墊和操作臺旋轉，同時在襯底背面保持向下的力，將磨料和化學活性溶液(通常稱為拋光液或拋光漿料)塗於墊片上，該拋光液與正在拋光的薄膜發生化學反應開始進行抛光過程。 CMP拋光液主要包含磨料、化學試劑和溶劑等。磨料主要為各種無機或有機顆粒，如二氧化矽、氧化鋁、二氧化錘、氧化 • =、氧化鐵、聚合物顆粒及/或它們的混合物等。CMP拋光液的洛劑主要為水或醇類。而化學試劑是用來控制拖光速率和拋光選擇比、改善拋光表面性能以及提高拋光液的穩定性，包含氧化劑、絡合劑、緩飿劑及/或表面活性劑等。。在些公開專利中，銨鹽和季銨類物質被用來調節一些非金屬物質的拋光速率，如在CN 1498931A中，在二氧化石夕為^料的巧光液^丄水;谷性季銨鹽被用來提高多晶石夕的拋光速率和改善拋光液的穩定性，其多晶矽膜拋光速率與氮化物膜拋光速率的比率達到50如USP 6,046，1Π，該拋光液包含Zr02磨料、表面活性劑、TMAH或TBAH、和水，其對s〇G具有較高的拋光速率和 200815568 較南的拋光選擇性’抛光速率在達到4000 A/min，抛光選擇性高達8，但是其使用ΖΓ〇2磨料，價格昂貴。在usp 7〇1856〇中: 含有2〜15個碳鏈長度的有機季胺鹽用於增加TE〇s的拋光速率，同時降低SiC、SiCN、Si3N4和SiC0等材料的拋光速率。然而以上專利中，銨鹽和季銨類物質並沒有用於提高低介電材料 CDO的拋光速率。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing liquid, and in particular, to a polishing liquid for polishing a low dielectric material. [Prior Art] In the fabrication of integrated circuits, the standard of interconnect technology has been continuously improved, and a layer is deposited on one layer to form an irregular topography on the surface of the substrate. One leveling method used in the prior art is chemical mechanical polishing (CMP), which uses an abrasive-containing mixture and a polishing pad to polish an integrated circuit surface. In a typical chemical mechanical polishing process, the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the back side of the substrate with a load. During polishing, the polishing pad and the table rotate while maintaining a downward force on the back side of the substrate, applying an abrasive and a chemically active solution (commonly referred to as a polishing slurry or polishing slurry) to the gasket. The polished film undergoes a chemical reaction to begin the polishing process. The CMP polishing liquid mainly contains abrasives, chemicals, solvents, and the like. The abrasive is mainly various inorganic or organic particles such as cerium oxide, aluminum oxide, oxidizing hammer, oxidation, =, iron oxide, polymer particles and/or mixtures thereof. The CMP slurry is mainly water or alcohol. Chemical reagents are used to control the drag rate and polishing selectivity, improve the polishing surface performance, and improve the stability of the polishing solution, including oxidizing agents, complexing agents, buffering agents, and/or surfactants. . In some of the published patents, ammonium salts and quaternary ammonium species are used to adjust the polishing rate of some non-metallic materials, such as in CN 1498931A, in the sulphur dioxide sulphuric acid solution; gluten quaternary ammonium salt It is used to improve the polishing rate of polycrystalline spine and improve the stability of the polishing liquid. The ratio of the polycrystalline tantalum film polishing rate to the nitride film polishing rate reaches 50, such as USP 6,046,1Π. The polishing solution contains Zr02 abrasive, surfactant. , TMAH or TBAH, and water, which have a higher polishing rate for s〇G and a polishing selectivity of 200815568 compared to the south. The polishing rate is up to 4000 A/min and the polishing selectivity is up to 8, but it uses ΖΓ〇2 abrasive. ,expensive. In usp 7〇1856〇: Organic quaternary ammonium salts containing 2 to 15 carbon chain lengths are used to increase the polishing rate of TE〇s while reducing the polishing rate of materials such as SiC, SiCN, Si3N4 and SiC0. However, in the above patents, ammonium salts and quaternary ammonium species are not used to increase the polishing rate of the low dielectric material CDO.

.隨著積體電路複雜程度的增加和器件尺寸的減小，一些含有 =、c、o的低介電材料逐漸被應用於積體電路，以提高未來體電路的開合能力。低介電材料包含摻碳二氧化列CDO)、碳氧和顿石夕玻璃(〇SG)等’畴碳二氧化石夕(CDO)是目前低介電㈣。㈣财電觀在未來將取代二氧 (〇S、FSG、SOG等）’構成積體電路中的絕緣層。【發明内容】液，3m㈣在於提供—種用於拋光低介電材料的拋光 Uii ίΠΐί低介電材料的拋光辭。本發明的拋光的拋朵涪由於廷類小分子活性物質能用於本發明，從而可以提高低介電以提高拋光選擇性銅的抛光速率無日聰的影響，從而可的含語“小分子活性物質，，是指分子量應<500 的法根離子的·物質或季銨類的活性物質。錢、四甲基氮氧化銨、五硼酸銨、酒石酸基四_酸銨，以及(且=^四二基虱氧化銨_及/或四丁地為四丁錢魏㈣，較佳 7 200815568 * 該活性物質的用量較佳地為_〗〜％、 0.2%。該摻鋁二氧化石夕磨料的濃度可以* 0 ’更佳地為〇·〇〇!〜路襯底的拋光液中給出的各種濃有技術中拋光積體電為2〜15%，水為餘量。濃广乂^也為1〜2〇%，更佳地比。辰度均拋光液的重量百分 =摻!呂二氧化⑦磨料為溶膠型摻銘膠型磨料分散液可以大娜低襯絲液，這種溶· 底表面缺陷問題。 ]痕、腐蝕、點蝕等襯該溶膠型摻鋁二氧化矽分散液的阳值較佳地為2〜7。 500ηΪ本%該^二氧化㈣料顺錄佳地是5〜 Omn更仏地疋5〜lOOnm，最佳地為2〇〜8〇職。 2〜7 此外，本發明的拋光液的pH值較佳地為本^的拋光液還可以包含現有技射的各種添加劑，如阻钟j、氧化劑、速率增助劑、表面活性劑及/或其他助劑。該阻蝕劑可以是拋光劑領域中使用的各種阻蝕劑，苯並三唾(BTA);該氧化劑可以是拋光劑領域中使㈣各種氧2 劑，較佳地為過氧化氳；該表面活性劑可以是抛光劑領域中使用的各種表面活性劑，較佳地為聚乙烯乙二醇(PEG)及/或聚丙類(PAA) 〇本發明的拋光液較佳地能拋光下列材料：摻碳二氧化石夕 (CDO);本發明的拋光液也可以用於拋光二氧化矽(TE〇s)、 SiON、Ta或Cu等材料。在本發明中，術語“低介電材料(Low dielectric c〇nstant material)” 是指介電常數(Dielectric constant)低於 3·0 的材料。 8 200815568 i * ΤΕ〇Γ、^Ϊ進步效果在於：本㈣_光㈣CIX)、 . ι〇Ν等材料的拋光具有促上率無明顯的影響，因此可以大對銅的撤光速發明的抱光液可以大大降低襯底表二^广力，選擇性。並且本表面缺陷問題。大降低襯絲面的刮痕、腐姓、點钱等襯底步的發明之優點與精神可以藉由以下的發明詳述得到進一【實施方式】瞻 ^到上述有關本發明之範,，所採用之技術手段及 /、餘功效’茲舉數個較佳實施例加以說明如下：實施例1 對比拋光液1’一摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0.1%、PEG200 0.2%、BTA 0.2%、H202 0·5%、水餘量、ρΗ=3 ; " 拋光液1 —摻鋁二氧化矽磨料（45nm) 7%、酒石酸 0·1%、PEG200 〇·2%、BTA 0.2%、H202 0·5%、氨水 (ΝΗ40Η) 0.1%、水餘量、ρη=3 ; 拋光液2-摻鋁二氧化矽磨料（45nm) 7%、酒石酸 0.1%、PEG200 0·2%、ΒΤΑ 0·2%、H202 0.5%、五硼酸銨 0.1%、水餘量、pH=3 ; 抛光液3 —摻銘二氡化石夕磨料（45nm) 7%、酒石酸 0·1%、PEG200 0.2%、BTA 0.2%、H202 0.5%、酒石酸銨 0.1%、水餘量、卩11=3; 拋光液4 ~摻紹二氧化石夕磨料（45nm) 7%、酒石酸 200815568 鼸 * 0.1%、PEG200 〇·2%、ΒΤΑ 0·2%、H202 0·5%、四丁基四氟硼酸銨0·02%、水餘量、ρΗ二3 ; 拋光液5 —摻鋁二氧化矽磨料（45nm) 7%、酒石酸 0·1%、PEG200 0·2%、BTA 0.2%、H202 0.5%、四甲基氫氧化銨(ΤΜΑΗ) 0.025%、水餘量、ΡΗΚ3 ; 拋光液6 —摻鋁二氧化矽磨料（45nm) 7%、酒石酸 0·1%、PEG200 0·2%、BTA 0.2%、H202 0·5%、四丁基氫氧化銨(ΤΒΑΗ) 0.01%、水餘量、pH二3。 ⑩拋光材料：BD材料；拋光條件：lpsi，拋光盤轉速 70rpm，拋光墊 Politex，拋光液流速 l〇〇ml/min，Logitech PM5 Polisher 〇結果如圖1所示：本發明的含有活性物質的拋光液可以顯著地提高低介電材料BD的拋光速率，尤其是四丁基氫氧化銨和四丁基四氟硼酸銨，其拋光速率達到 600人/min以上。實施例2 ⑩ 對比拋光液7,一摻鋁二氧化矽磨料(45nm) 0%、水餘量、pH=3 ; 拋光液7—摻鋁二氧化矽磨料(45nm) 6%、五硼酸 0.1%、水餘量、pH=3 ; 對比拋光液8’一摻鋁二氧化矽磨料(45nm) 6%、酒石酸0.2%、水餘量、pH=3 ; 拋光液8 —摻鋁二氧化矽磨料（45nm) 0%、酒石酸 0.2%、五硼酸銨01%、水餘量、pH=3 ; 200815568 i j 對比拋光液9’一摻鋁二氧化矽磨料(45nm) 6%、酒石酸 0.2%、BTA 0.2%、ΙΪ2〇2 0.5%、水餘量、pH二3 ; 拋光液9 —摻鋁二氧化矽磨料（45nm) 6%、酒石酸 0.2%、BTA 0.2%、H202 0.5%、五侧酸銨〇 1〇/〇、水餘量、ρΉ=3 ; 對比拋光液10’一摻鋁二氧化矽磨料(45nm) 6%、酒石酸 0.2%、BTA 0.2%、H2〇2 0.5%、pEG2〇〇〇 2%、水餘量、pE=3 ; _ 拋光液10—摻鋁二氧化矽磨料（45nm) 6%、酒石酸 0.2%、BTA 0.2%、H2〇2 0.5%、PEG200 0.2%、五蝴酸銨 0.1%、水餘量、pH=3。拋光材料：BD材料；拋先條件：lpsi，拋光盤轉速 70rPm，拋光塾 Politex，拋光液流速 1〇〇ml/min , L〇gitech PM5 Polisher。結果如圖2所示：本發明的含有活性物質的拋光液可以顯著地提南低介電材料BD的拋光速率，在含有各種添 _ 加劑下可以更好地提高拋光速率。實施例3 對比拋光液Π’一摻鋁二氡化矽磨料(45nm) 7%、酒石酸 0.1%、PEG200 0·2%、BTA 0.2%、H202 0.5%、水餘量、pH=3 ; ' 抛光液11(1) —摻銘一氧化；s夕磨料(45nm) ·7%、酒石酸 ^•1%、PEG200 0.2%、ΒΤΑ 0·2%、η202 0·5%、四曱基氫氧化錢0.0125%、水餘量、ρΗ=3 ; 11 200815568 < > 拋光液11(2)—摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0.1%、PEG200 0.2%、ΒΙΑ 〇·2%、h202 0.5%、四甲基氳氧化銨0.025%、水餘量、pH=3 ; 拋光液11(3)—摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0.1% ^ PEG200 0.2% ^ BTA 0.2% > η2〇2 〇·5% - ^ ψ 氧化銨0·05%、水餘量、pjj二3 ; 拋光液11(4)~摻鋁二氧化矽磨料(45nm) 7%、酒石酸〇·1%、PEG200 0·2ο/〇、ΒΤΑ 0·2〇/〇、h202 0.5%、四甲基氳 ϋ 氧化銨0.125%、水餘量、pfj=3 ; 工拋光液11(5)—摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0，1〇/〇、PEG200 0.2%、ΒΤΑ 0.2%、h202 0.5%、四甲基氣氧化銨0.2%、水餘量、pH=3。工拋光材料：BD材料和TE〇s材料；拋光條件：土，拋光盤轉速7〇rpm，拋光墊p〇litex，拋光液流速 l〇〇ml/min，Logitech PM5 P〇lisher。 ' 結果如圖3所示··本發明的拋光液中添加活,性物質響後，不僅能夠提高對低介電材料BD的拋光速率，而且同 B寸對TEOS的拋光有加速作用。隨著活性物質用量的声加，本發明的拋光液對低介電材料BD和TE〇s材料拋光的促進作用先逐漸增強，達到特定值後逐漸減弱。說明只 ^當活性物質的用量為一特定值時，才能對低介電材料的拋光速率有促進作用。否則，過量的活性物質反而會抑制BD和TEOS的拋光。、實施例4 對比拋光液12’（1)—摻鋁二氧化矽磨料(45nm) 〇.5%、 12 200815568 瀘 > 水餘量、pH=3 ; 對比拋光液水餘量、pH二3 ; 對比拋光液水餘量、pH二3 ; 對比拋光液水餘量、pH=3 ; 12 (2)〜摻鋁二氧化矽磨料(45nm) 2%、 12(3)—掺銘二氧化矽磨料(45nm) 5%、 12 (句〜摻鋁二氧化矽磨料(45nm) 10%、As the complexity of integrated circuits increases and the size of devices decreases, some low dielectric materials containing =, c, and o are gradually being applied to integrated circuits to improve the opening and closing capabilities of future bulk circuits. Low dielectric materials including carbon-doped dioxide (CDO), carbon oxide, and dendritic glass (〇SG), etc., of the domain carbon dioxide (CDO) are currently low dielectric (IV). (4) In the future, the financial and power concept will replace the dioxin (〇S, FSG, SOG, etc.) to form an insulating layer in the integrated circuit. SUMMARY OF THE INVENTION The liquid, 3m (d), is provided by polishing a Ui ίΠΐ low dielectric material for polishing low dielectric materials. The polished throwing enamel of the present invention can be used in the present invention because of the small-sized molecular active material, so that the low dielectric can be improved to improve the polishing rate of the polishing selective copper. The active material refers to a substance having a molecular weight of <500, or a quaternary ammonium active material. Money, tetramethylammonium oxynitride, ammonium pentaborate, tartaric acid tetra-ammonium, and (and = ^四二基虱氧化氧化_和/或四丁地为四丁钱魏(四), preferably 7 200815568 * The active substance is preferably used in an amount of _〗〖%, 0.2%. The aluminum-doped oxidized stone The concentration of the abrasive can be *0', more preferably 〇·〇〇!~ The polishing system in the polishing solution of the substrate is 2~15%, and the water is the balance. ^ is also 1~2〇%, better than the ratio. The weight percentage of the polishing liquid is mixed = Lu 2 oxidation 7 abrasive is a sol type gelatin type abrasive dispersion can be Da Na low lining silk liquid, this Solubility and bottom surface defects.] Trace, corrosion, pitting, etc. The positive value of the sol-type aluminum-doped cerium oxide dispersion The ground is 2 to 7. 500 Ϊ Ϊ % 该该该 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 二二二二二二二二二二二四四四四四四四四四四四四四四四四四四四四四四四四 2 The polishing liquid having a preferred pH value of the polishing liquid may further contain various additives of the prior art, such as a clock, an oxidizing agent, a rate increasing agent, a surfactant, and/or other additives. It may be various corrosion inhibitors used in the field of polishing agents, benzotrisal (BTA); the oxidizing agent may be (4) various oxygen agents, preferably barium peroxide; in the field of polishing agents; the surfactant may be Various surfactants used in the field of polishing agents, preferably polyethylene glycol (PEG) and/or polypropylene (PAA). The polishing liquid of the present invention preferably polishes the following materials: carbon-doped carbon dioxide (CDO); The polishing liquid of the present invention can also be used for polishing materials such as cerium oxide (TE〇s), SiON, Ta or Cu. In the present invention, the term "Low dielectric c〇nstant material" ")" refers to a material with a dielectric constant (Dielectric constant) lower than 3.0. 8 200815568 i * ΤΕ〇Γ, ^Ϊ progress The effect is that: (4) _ light (four) CIX), . ι〇Ν and other materials have no obvious influence on the polishing rate, so the immersion liquid which can be invented by the copper light can greatly reduce the substrate surface. , selectivity, and the problem of surface defects. The advantages and spirit of the invention of the substrate step of greatly reducing the scratches, rot, and money of the lining surface can be obtained by the following detailed description of the invention [Embodiment] To the above-mentioned aspects of the present invention, the technical means and/or the remaining functions are described as follows: Example 1 Comparative polishing liquid 1'-doped aluminum-doped cerium oxide abrasive (45 nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, H202 0.5%, water balance, ρΗ=3; " Polishing solution 1 - aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0· 1%, PEG200 〇·2%, BTA 0.2%, H202 0.5%, ammonia water (ΝΗ40Η) 0.1%, water balance, ρη=3; polishing solution 2-aluminum-doped cerium oxide abrasive (45nm) 7%, Tartaric acid 0.1%, PEG200 0. 2%, ΒΤΑ 0. 2%, H202 0.5%, ammonium pentaborate 0.1%, water balance, pH=3; polishing solution 3 - mixed with Ming 2 Fossil eve abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, H202 0.5%, ammonium tartrate 0.1%, water balance, 卩11=3; polishing solution 4 ~ doped with sulphur dioxide夕 abrasive (45nm) 7%, tartaric acid 200815568 鼸* 0.1%, PEG200 〇·2%, ΒΤΑ 0·2%, H202 0.5%, tetrabutylammonium tetrafluoroborate 0.02%, water balance, ρΗ 2 3; polishing solution 5 - aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0. 2%, BTA 0.2%, H202 0.5%, tetramethylammonium hydroxide (ΤΜΑΗ) 0.025% , water balance, ΡΗΚ3; polishing solution 6 - aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0. 2%, BTA 0.2%, H202 0. 5%, tetrabutyl hydroxide Ammonium (ΤΒΑΗ) 0.01%, water balance, pH two. 10 polishing material: BD material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing liquid flow rate l 〇〇 ml / min, Logitech PM5 Polisher 〇 results shown in Figure 1: polishing of the active substance of the present invention The liquid can significantly increase the polishing rate of the low dielectric material BD, especially tetrabutylammonium hydroxide and tetrabutylammonium tetrafluoroborate, and the polishing rate reaches 600 people/min or more. Example 2 10 Comparative polishing liquid 7, an aluminum-doped cerium oxide abrasive (45 nm) 0%, water balance, pH = 3; polishing liquid 7 - aluminum-doped cerium oxide abrasive (45 nm) 6%, pentaborate 0.1% , water balance, pH=3; comparison polishing liquid 8'-doped aluminum cerium oxide abrasive (45nm) 6%, tartaric acid 0.2%, water balance, pH=3; polishing liquid 8 - aluminum-doped cerium oxide abrasive ( 45nm) 0%, tartaric acid 0.2%, ammonium pentaborate 01%, water balance, pH=3; 200815568 ij Comparative polishing solution 9'-aluminum-doped cerium oxide abrasive (45nm) 6%, tartaric acid 0.2%, BTA 0.2% ΙΪ2〇2 0.5%, water balance, pH 2; polishing solution 9 - aluminum-doped cerium oxide abrasive (45nm) 6%, tartaric acid 0.2%, BTA 0.2%, H202 0.5%, five-sided ammonium amide 〇1〇 /〇, water balance, ρΉ=3; Comparative polishing liquid 10'-doped aluminum cerium oxide abrasive (45nm) 6%, tartaric acid 0.2%, BTA 0.2%, H2〇2 0.5%, pEG2〇〇〇2%, Water balance, pE=3; _ Polishing solution 10--aluminum-doped cerium oxide abrasive (45nm) 6%, tartaric acid 0.2%, BTA 0.2%, H2〇2 0.5%, PEG200 0.2%, ammonium pentanoate 0.1%, Water balance, pH=3. Polishing material: BD material; pre-condition: lpsi, polishing disk speed 70rPm, polishing 塾 Politex, polishing fluid flow rate 1〇〇ml/min, L〇gitech PM5 Polisher. As a result, as shown in Fig. 2, the polishing liquid containing the active material of the present invention can remarkably improve the polishing rate of the south dielectric material BD, and the polishing rate can be further improved by containing various additives. Example 3 Comparative polishing liquid Π'-doped aluminum bismuth bismuth abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0. 2%, BTA 0.2%, H202 0.5%, water balance, pH=3; 'Polishing Liquid 11 (1) - Incorporating Ming Yi Oxidation; s-night abrasive (45nm) · 7%, tartaric acid ^•1%, PEG200 0.2%, ΒΤΑ0·2%, η202 0.5%, tetradecyl hydroxide money 0.0125 %, water balance, ρΗ=3; 11 200815568 <> Polishing solution 11 (2) - aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, ΒΙΑ 〇 · 2%, h202 0.5%, tetramethyl phosphonium oxide 0.025%, water balance, pH=3; polishing solution 11 (3) - aluminum-doped cerium oxide abrasive (45 nm) 7%, tartaric acid 0.1% ^ PEG200 0.2% ^ BTA 0.2% > η2〇2 〇·5% - ^ ψ Ammonium oxide 0. 05%, water balance, pjj 2 3; polishing solution 11 (4) ~ aluminum-doped cerium oxide abrasive (45 nm) 7%, barium tartrate · 1 %, PEG200 0·2ο/〇, ΒΤΑ 0·2〇/〇, h202 0.5%, tetramethylphosphonium oxide 0.125%, water balance, pfj=3; polishing liquid 11(5)—aluminized two Cerium oxide abrasive (45nm) 7%, tartaric acid 0,1〇/〇, PEG200 0.2%, ΒΤΑ 0.2%, h202 0.5%, tetramethylammonium oxide 0.2%, Balance, pH = 3. Polishing material: BD material and TE〇s material; polishing conditions: soil, polishing disk speed 7 rpm, polishing pad p〇litex, polishing solution flow rate l〇〇ml/min, Logitech PM5 P〇lisher. The result is shown in Fig. 3. The addition of the active material to the polishing liquid of the present invention not only improves the polishing rate of the low dielectric material BD, but also accelerates the polishing of the TEOS with the B inch. With the addition of the amount of the active material, the polishing liquid of the present invention gradually enhances the polishing effect of the low dielectric materials BD and TE〇s, and gradually decreases after reaching a certain value. It is stated that only when the amount of the active material is a specific value, the polishing rate of the low dielectric material can be promoted. Otherwise, excessive active material will inhibit the polishing of BD and TEOS. Example 4 Comparative polishing liquid 12'(1)-aluminum-doped cerium oxide abrasive (45nm) 〇.5%, 12 200815568 泸> Water balance, pH=3; Contrast polishing water balance, pH 2 Contrast the water balance of the polishing solution, pH 2; Contrast the water balance of the polishing solution, pH=3; 12 (2) ~ Aluminium-doped cerium oxide abrasive (45nm) 2%, 12(3) - Ingredient cerium oxide Abrasive (45nm) 5%, 12 (sentence ~ aluminum-doped cerium oxide abrasive (45nm) 10%,

對比拋光液水餘量、pH二3 ; 對比拋光液水餘量、pH=3。 12 (5)〜摻鋁二氧化矽磨料(45nm) 15%、 12 (6)〜摻鋁二氧化矽磨料(45nm) 20%、枣=12(1)-摻鋁二氧化矽磨〇5%、基風氧化銨0·007%、水餘量、pH=3 ;Contrast the polishing solution water balance, pH 2; Compare the polishing water balance, pH=3. 12 (5) ~ Aluminium-doped cerium oxide abrasive (45nm) 15%, 12 (6) ~ Aluminium-doped cerium oxide abrasive (45nm) 20%, Jujube = 12 (1) - Aluminium-doped cerium oxide 矽 5% , base wind ammonium oxide 0.007%, water balance, pH=3;

〇 Iff液12(2)—摻銘二氧化石夕磨料(45nm) 2%、四丁基虱氧化銨0·007%、水餘量、pHy ; 抛光液12(3)-摻銘二氧化石夕磨5 5%、四丁基虱軋化銨0.007%、水餘量、pH=3 ; 拋光液12(4)—摻鋁二氧化矽磨料(45nm) 1〇%、四丁基虱氧化銨0·007%、水餘量、pH=3 ; 拋光液12(5)一摻鋁二氧化矽磨料(45nm) 15%、四丁基氫氧化銨0.007%、水餘量、pH=3 ; 拋光液12(6)—摻鋁二氧化矽磨料(45nm) 2〇%、四丁基氫氧化銨0.007%、水餘量、？11=3。 13 200815568〇Iff solution 12(2)—Incorporating Ming dioxide dioxide (45nm) 2%, tetrabutylphosphonium oxide 0.007%, water balance, pHy; polishing solution 12(3)-doped with sulphur dioxide 5 5%, tetrabutylammonium oxide 0.007%, water balance, pH=3; polishing solution 12(4)-aluminum-doped cerium oxide abrasive (45nm) 1〇%, tetrabutylphosphonium ammonium oxide 0·007%, water balance, pH=3; polishing solution 12(5)-aluminum-doped cerium oxide abrasive (45nm) 15%, tetrabutylammonium hydroxide 0.007%, water balance, pH=3; Liquid 12 (6) - aluminum-doped cerium oxide abrasive (45 nm) 2% by weight, tetrabutylammonium hydroxide 0.007%, water balance, ? 11=3. 13 200815568

ί A 拋光材料：BD材料；抛光條件：lpSi，拋光盤轉速 70rpm，拋光墊 Politex，拋光液流速 looml/min，Logitech PM5 Polisher。結果如圖4所示：當摻鋁二氧化矽的濃度為〇·5%〜 20%之間時，相對於不含有活性物質的拋光液，本發明的含有活性物質的拋光液可以顯著增加低介電材料BD的拋光速率。實施例5 ⑩ 對比拋光液13’一摻銘二氧化石夕磨料(45nm) 7%、酒石酸 0·1%、PEG200 0.2%、BTA 0.2%、Η202 〇·5%、水餘量、pH二3 ; 拋光液13 —摻銘一氧化秒磨料（45nm) 7%、酒石酸 0.1%、PEG200 0·2〇/〇、BTA 0.2%、H202 0.5%、四甲基氫氧化錢0.025%、水餘量、。拋光材料：BD材料、TE0S材料、si〇N材料、Ta材料和Cu材料·，拋光條件：lpsi，拋光盤轉速7〇rpm，拋 •光墊 Politex，拋光液流速 l〇〇ml/min，Logitech PM5 Polisher。結果如圖5所* :相對科含有活性物f的拋光液，本發明的含有活性物質的拋光液可以改善各種非金屬材料的拋光速率，如BD材料、TEOS材料以及si〇N材料，但是對金屬如Ta和Cu的拋光速率沒有太大的影響，因此本發明的拋光液可以提高襯底的拋光選擇性。實施例6 對比拋光液14’（1)一摻鋁二氧化矽磨料(45nm) 7%、 200815568 酒石酸 0.1%、PEG200 0.2%、BTA 0.2%、H2〇2 0.5%、水餘量、pH=2 ; 對比拋光液14’(2)—摻鋁二氧北矽磨料(45nm) 7%、酒石酸〇·1%、PEG200 0·2%、BTA 0.2%、H202 0.5%、水餘量、pH二3 ; 對比拋光液14，(3)—摻鋁二氧化矽磨料(45nm) 7〇/0、酒石酸〇·1%、PEG200 0·2%、BTA 0.2%、H2〇2 0.5%、水餘量、pH=5 ; _ 對比拋光液14’(4)一摻銘二氧化石夕磨料(45nm) 7%、酒石酸 0.1%、PEG200 0.2%、BTA 0.2%、H202 0.5%、水餘量、pH=7 ; 抛光液14⑴一摻鋁二氧化矽磨料(45nm) 7%、酒石酸 ^•1%、PEG200 0·2%、BTA 0.2%、H2〇2 0.5%、四甲基氫氧化铵0.025%、水餘量、pH=2 ; 拖光液14(2)—摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0·1ο/〇、PEG200 0.2%、ΒΤΑ 0·2%、H202 0.5%、四曱基氫鲁氧化鐘0.025%、水餘量、; 拋光液14(3)-摻鋁二氧化矽磨料(45nmy 7%、酒石酸 0·1ο/〇、PEG200 0·2%、BTA 0·2%、H2〇2 0.5%、四甲基氫氧化錢^ 0·025%、水餘量、; 抛光液14(4)〜摻鋁二氧化矽磨料(45mn) 7%、酒石酸〇·1%、PEG200 0·2〇/〇、ΒΤΑ 0·2ο/〇、Η2〇2 0·5ο/〇、四曱基氫氧化銨0.025%、水餘量、ρΗ=7。拋光條件：Ipsi，拋光盤轉速70rpm，拋光墊 Politex ’ 拋光液流速 i〇〇mi/min，Logitech PM5 Polisher。 15 200815568 身 i 結果如圖6所示··當拋光液的pH值為2〜7時，相對於不含有活性物質的拋光液，本發明的含有活性物質的拋光液可以顯著增加低介電材料BD的拋光速率。實施例7 對比拋光液15’（1，）-二氧化矽磨料(7〇腿，pL_3, Fus〇ί A Polishing material: BD material; polishing conditions: lpSi, polishing disk speed 70 rpm, polishing pad Politex, polishing solution flow rate looml/min, Logitech PM5 Polisher. As a result, as shown in FIG. 4, when the concentration of the aluminum-doped cerium oxide is between 5% and 20%, the polishing liquid containing the active material of the present invention can be remarkably increased with respect to the polishing liquid containing no active material. The polishing rate of the dielectric material BD. Example 5 10 Comparative polishing liquid 13'-doped with SiO2 (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, Η202 〇·5%, water balance, pH 2 Polishing solution 13 —Incorporating Ming-Oxidation Second Abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0·2〇/〇, BTA 0.2%, H202 0.5%, tetramethylammonium hydroxide 0.025%, water balance, . Polishing materials: BD material, TE0S material, si〇N material, Ta material and Cu material ·, polishing conditions: lpsi, polishing disk speed 7 rpm, polishing pad Politex, polishing liquid flow rate l 〇〇 ml / min, Logitech PM5 Polisher. The result is as shown in Fig. 5: the polishing liquid containing the active material f of the present invention, the polishing liquid containing the active material of the present invention can improve the polishing rate of various non-metal materials, such as BD material, TEOS material and si〇N material, but The polishing rate of metals such as Ta and Cu does not have much influence, and therefore the polishing liquid of the present invention can improve the polishing selectivity of the substrate. Example 6 Comparative polishing liquid 14' (1)-aluminum-doped cerium oxide abrasive (45 nm) 7%, 200815568 tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, H2〇2 0.5%, water balance, pH=2 Contrast polishing solution 14' (2) - aluminum-doped bismuth abrasive (45nm) 7%, barium tartrate · 1%, PEG200 0. 2%, BTA 0.2%, H202 0.5%, water balance, pH two 3 Contrast polishing solution 14, (3) - aluminum-doped cerium oxide abrasive (45nm) 7〇/0, barium tartrate · 1%, PEG200 0·2%, BTA 0.2%, H2〇2 0.5%, water balance, pH=5 ; _ Contrast polishing solution 14'(4)-Infused with SiO2 (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, H202 0.5%, water balance, pH=7 Polishing solution 14(1)-aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid ^•1%, PEG200 0·2%, BTA 0.2%, H2〇2 0.5%, tetramethylammonium hydroxide 0.025%, water balance Quantity, pH=2; Drag liquid 14(2)—Aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0·1ο/〇, PEG200 0.2%, ΒΤΑ0·2%, H202 0.5%, tetradecyl Hydrogen oxidation clock 0.025%, water balance, polishing liquid 14 (3) - aluminum-doped cerium oxide abrasive (45nmy 7%, tartaric acid 0·1ο / 〇, PEG2 00 0·2%, BTA 0·2%, H2〇2 0.5%, tetramethylammonium hydroxide ^ 0.025%, water balance, polishing liquid 14 (4) ~ aluminum-doped cerium oxide abrasive (45mn ) 7%, bismuth tartrate·1%, PEG200 0·2〇/〇, ΒΤΑ 0·2ο/〇, Η2〇2 0·5ο/〇, tetradecyl ammonium hydroxide 0.025%, water balance, ρΗ=7 Polishing conditions: Ipsi, polishing disk speed 70 rpm, polishing pad Politex 'Polishing fluid flow rate i〇〇mi/min, Logitech PM5 Polisher. 15 200815568 Body i The result is shown in Figure 6. · When the pH of the polishing solution is 2~ At 7 o'clock, the polishing liquid containing the active material of the present invention can significantly increase the polishing rate of the low dielectric material BD with respect to the polishing liquid containing no active material. Example 7 Comparative polishing liquid 15'(1,)-cerium oxide Abrasive (7-legged, pL_3, Fus〇)

Company) 7%、酒石酸〇·1%、P]Eg2〇〇〇·2%、BTA 0·2%、Η2Ο2 〇·5%、水餘量、pjj=3 ;Company) 7%, tartaric acid 〇·1%, P]Eg2〇〇〇·2%, BTA 0·2%, Η2Ο2 〇·5%, water balance, pjj=3;

對比拋光液15’（1)—二氧化矽磨料(7〇腿，pl_3，Fus〇Contrast polishing solution 15'(1) - cerium oxide abrasive (7 〇 leg, pl_3, Fus〇

Company) 7%、酒石酸〇·1%、PEG200 〇·2% ^ BTA 0·2%、Η2〇2 0·5%、四曱基氫氧化銨〇〇25〇/〇、水餘量、 pH二3; 、對比拋光液15’(2’）一 A1203包覆的二氧化矽磨料 (A1203-coated silica)(35nm) 7%、酒石酸〇 1%、pEG2〇〇 0.2%、BTA 0.2%、H202 0·5%、水餘量、ρΗ=3 ; 對比拋光液15 (2) — Α1203包覆的二氧化石夕磨料 (A1203-coated silica)(35nm) 7%、酒石酸〇 1%、pEG2〇〇參 0·2%、ΒΤΑ 0·2%、ΗΑ 〇·5%、四甲基氫氧化銨〇〇25%、水餘量、pH=3 ; 對比拋光液15，(3，）一Ζτ〇2包覆的二氧化矽磨料 (Zr02-coated silica)(20nm) 7%、酒石酸〇 1%、ρΕ〇2〇〇 0·2%、BTA 0.2%、H2〇2 0.5%、水餘量、pH:3 ; 對比拋光液iSXW — ZrO]包覆的二氧化矽磨料(Zr〇2_ coated silica)(20nm) 7%、酒石酸〇1%、pEG2〇〇〇 ΒΤΑ 0·2〇/〇、Η2〇2 0·5%、四甲基氫氧化銨〇〇25%、·水〇餘量、ρΗ=3 ; 16 200815568 i i 對比拋光液15’(4’）一氣相氧化鋁磨料（Fumed silica)(初始粒徑 15nm) 7%、酒石酸 0.1%、PEG200 0·2%、BTA 0.2%、Η202 0.5%、水餘量、pH二3 ; 對比拋光液15’(4)一氣相氧化銘磨料(Fumed silica)(初始粒徑 15nm) 7%、酒石酸 0.1%、peg200 0.2%、BTA 0.2%、H2〇2 0.5%、四曱基氫氧化銨0 025%、水餘量、 pH-3 ；對比拋光液15(5’）一摻銘氧化銘磨料(45nm) 7%、酒石酸 0.1%、PEG200 0.2%、BTA 0.2%、H202 0.5%、水餘 •量、pH:3 ; 、拋光液15(5)—摻鋁二氧化矽磨料(45nm) 7%、酒石酸 0.1%、PEG200 0.2%、ΒΤΑ 0·2ο/〇、Η2〇2 〇·5%、四甲基氫氧化按0.025%、水餘量、pHy。拋光材料：BD材料；抛光條件：lpsi，拋光盤轉速 70rPm，拋光墊P〇litex，拋光液流速1〇〇ml/min，[〇糾6吐 PM5 Polisher 〇結果如圖7所示··在以摻銘二氧化石夕為磨料的抛光液性物質後’低介電材料BD的抛光速率得刮明顯的巧。*在其他-些磨料的拋光財加人活性低介電材料BD的拋光速率反而會有所下降。實施例8 對比拋光液16’一酸 0·2%、ΒΤΑ 0·2ο/〇、摻鋁—氧化石夕磨料(2〇ηιη) 1〇%、草 Η2〇2〇·3<>/❸、水餘量、ρΗ=3 ; 17 200815568 痤 t 水餘量、ρΉ=3 ; 對比拋光液17’一掺銘二氧化石夕磨料(50nm) 10%、草酸 0·2%、ΒΤΑ 0·2%、H2O2 0.3%、水餘量、pH二3 ; 拋光液I7—摻鋁二氧化矽磨料（5〇nm) 1〇%、草酸 0·2%、BTA 0.2%、H202 0.3%、四丁基氳氧化銨〇〇1〇/〇、水餘量、ρΉ=3 ; 對比拋光液18’一摻鋁二氧化矽磨料（8〇nm) 1〇%、草酸 0.2%、ΒΤΑ 0·2%、H202 0.3%、水餘量、pH二3 · • 拋光液18—掺鋁二氧化矽磨料（8〇nm) 1〇%、草酸 0.2%、BTA 0.2%、H202 0·3%、四丁基氫氧化銨〇〇1% ' 水餘量、pH二3。拋光材料：BD材料；拋光條件：lpsi，拋光盤旋轉速率為70rpm，抛光整P〇litex，拋光液流速1〇〇ml/min， Logitech PM5 Polisher 〇適人8所示：20〜8〇nm的摻鋁二氧化矽磨料都 t ζγγ:且隨著磨料粒徑的增大，㈣速率上明。 'nm的摻鋁二氧化矽磨料也適合於本發本發明所使用的原料和試劑均 ^ 〇 ^ ^ 二氧切紐均指溶膠型軸二氧化^|^餘。.呂描述係輸更加清楚 -此’本發明所申請 18 200815568 義 t 作最寬廣的解釋，以致使其涵蓋所有可能的改變以及具相等性的安排。Company) 7%, bismuth tartrate·1%, PEG200 〇·2% ^ BTA 0·2%, Η2〇2 0.5%, tetradecyl ammonium hydroxide 〇〇25〇/〇, water balance, pH II 3; , Comparative polishing liquid 15' (2') - A1203 coated cerium oxide abrasive (A1203-coated silica) (35nm) 7%, bismuth tartrate 1%, pEG2 〇〇 0.2%, BTA 0.2%, H202 0 ·5%, water balance, ρΗ=3; Comparative polishing solution 15 (2) — Α1203 coated A12-coated silica (35nm) 7%, bismuth tartrate 1%, pEG2 ginseng 0·2%, ΒΤΑ 0·2%, ΗΑ 〇·5%, tetramethylammonium hydroxide 〇〇 25%, water balance, pH=3; contrast polishing liquid 15, (3,) Ζτ〇2 package Zr02-coated silica (20nm) 7%, barium tartrate 1%, ρΕ〇2〇〇0·2%, BTA 0.2%, H2〇2 0.5%, water balance, pH: 3 Comparative polishing liquid iSXW — ZrO】coated cerium oxide abrasive (Zr〇2_coated silica) (20nm) 7%, bismuth tartrate 1%, pEG2〇〇〇ΒΤΑ 0·2〇/〇, Η2〇2 0· 5%, tetramethylammonium hydroxide 〇〇 25%, hydrazine balance, ρ Η = 3; 16 200815568 ii Comparative polishing liquid 15' (4') Fumed silica (initial particle size 15nm) 7%, tartaric acid 0.1%, PEG200 0. 2%, BTA 0.2%, Η202 0.5%, water balance, pH 2-3; contrast polishing liquid 15' ( 4) Fumed silica (initial particle size 15nm) 7%, tartaric acid 0.1%, peg200 0.2%, BTA 0.2%, H2〇2 0.5%, tetradecyl ammonium hydroxide 0 025%, water Amount, pH-3; Contrast polishing solution 15 (5')-doped oxidized ingredient abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA 0.2%, H202 0.5%, water balance, pH: 3 , polishing liquid 15 (5) - aluminum-doped cerium oxide abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, ΒΤΑ 0 · 2 ο / 〇, Η 2 〇 2 〇 · 5%, tetramethyl hydroxide 0.025%, water balance, pHy. Polishing material: BD material; polishing conditions: lpsi, polishing disk speed 70rPm, polishing pad P〇litex, polishing liquid flow rate 1〇〇ml/min, [〇 66 吐 PM5 Polisher 〇 results shown in Figure 7 · After the polishing of the liquid dioxide with the mineral dioxide dioxide, the polishing rate of the low dielectric material BD is obviously sharp. * Polishing in other abrasives - Some polishing materials The polishing rate of low dielectric materials BD will decrease. Example 8 Comparative polishing liquid 16'-acid 0. 2%, ΒΤΑ 0·2 ο / 〇, aluminum-doped oxide-stone abrasive (2〇ηιη) 1〇%, grasshopper 2〇2〇·3<>/❸ , water balance, ρΗ=3; 17 200815568 痤t water balance, ρΉ=3; contrast polishing liquid 17'-doped with sulphur dioxide cherries (50nm) 10%, oxalic acid 0·2%, ΒΤΑ 0·2 %, H2O2 0.3%, water balance, pH 2; polishing solution I7 - aluminum-doped cerium oxide abrasive (5 〇 nm) 1%, oxalic acid 0.2%, BTA 0.2%, H202 0.3%, tetrabutyl氲Ammonium oxide 〇〇1〇/〇, water balance, ρΉ=3; Comparative polishing solution 18'-doped aluminum cerium oxide abrasive (8〇nm) 1〇%, oxalic acid 0.2%, ΒΤΑ0·2%, H202 0.3%, water balance, pH two 3 · • Polishing solution 18 - aluminum-doped cerium oxide abrasive (8 〇 nm) 1〇%, oxalic acid 0.2%, BTA 0.2%, H202 0·3%, tetrabutyl hydroxide Ammonium 〇〇 1% 'water balance, pH two. Polishing material: BD material; polishing conditions: lpsi, polishing disk rotation rate of 70 rpm, polishing of P〇litex, polishing liquid flow rate of 1 〇〇 ml / min, Logitech PM5 Polisher 〇人 8 : 20~8 〇 nm The aluminum-doped cerium oxide abrasives are all t ζ γ γ: and as the abrasive grain size increases, (4) the rate is clear. The 'nm-doped aluminum-doped cerium oxide abrasive is also suitable for the present invention. The raw materials and reagents used in the present invention are both 溶胶 ^ ^ dioxy-cut nucleus, which means sol-type axial oxidation. The description of the invention is clearer - this is the broadest interpretation of the application 18 200815568, so that it covers all possible changes and arrangements of equality.

d 19 200815568 * t 【圖式簡單說明】圖1為含有不同活性物質的拋光液拋光低介電材料的拋光速率圖。圖2為含有各種添加劑的拋光液對低介電材料拋光速率的影響圖。圖3為活性物質的濃度對低介電材料拋光速率的影響圖。 _ 圖4為不同的磨料濃度對低介電材料拋光速率的影響圖。圖5為本發明的拋光液對不同低介電材料的撤光速率影塑圖。 >、玲圖。圖6為本發明的拋光液的pH對低介電材料的椒光速率影響圖7為不同磨料對低電材料的拋光速率影響圖。圖8為磨料的粒徑對低介電材料的拋光速率影響圖。 ⑩ 【主要元件符號說明】 20d 19 200815568 * t [Simple description of the diagram] Figure 1 is a polishing rate diagram of a polishing liquid-polished low dielectric material containing different active materials. Figure 2 is a graph showing the effect of a polishing solution containing various additives on the polishing rate of a low dielectric material. Figure 3 is a graph showing the effect of the concentration of the active material on the polishing rate of the low dielectric material. Figure 4 shows the effect of different abrasive concentrations on the polishing rate of low dielectric materials. Fig. 5 is a view showing the light-removal rate of the polishing liquid of the present invention for different low dielectric materials. >, Ling map. Figure 6 is a graph showing the effect of the pH of the polishing solution of the present invention on the light rate of the low dielectric material. Figure 7 is a graph showing the effect of different abrasives on the polishing rate of the low electrical material. Figure 8 is a graph showing the effect of the particle size of the abrasive on the polishing rate of the low dielectric material. 10 [Main component symbol description] 20

Claims

200815568 X (Application scope: 1. A polishing liquid for polishing low dielectric materials, the polishing liquid comprises: aluminum-doped cerium oxide abrasive; water; and small molecule activity containing ammonium ion or quaternary ammonium 2. The polishing liquid according to claim 1, wherein the active material comprises: gas water, ammonium pentaborate, ammonium tartrate, tetramethyl ammonium oxide, tetrabutyl hydroxide, and/or four. 。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。 The polishing liquid according to any one of the preceding claims, wherein the aluminum-doped cerium oxide-containing abrasive is at a concentration of from 1 to 20%. The polishing material is a sol type doped cerium dioxide dispersion. The polishing liquid according to claim 5, wherein the sol type aluminum-doped cerium oxide dispersion has a pH of 2 to 7. 7. The polishing liquid according to item 5 of the patent application, wherein The particle size of the aluminum-doped cerium oxide abrasive is 5 to 500 nm. 8. The polishing liquid according to claim 7, wherein the particle size of the oxidized dream abrasive is 5 to 1 〇〇 nm. The polishing liquid according to any one of claims 1 to 4, wherein the polishing liquid has a pH of 2 7 〇 10, and the polishing liquid described in the item (1) of the patent scope is in- The method includes a corrosion inhibitor, an oxidizing agent, a rate increasing agent, and/or a surfactant. The polishing liquid according to any one of claims 1 to 4, wherein the low dielectric material Push the carbon two emulsification seconds.

twenty two