TW200813152A - Epoxy resin composite and die bonding agent containing the same - Google Patents
Epoxy resin composite and die bonding agent containing the same Download PDFInfo
- Publication number
- TW200813152A TW200813152A TW95133599A TW95133599A TW200813152A TW 200813152 A TW200813152 A TW 200813152A TW 95133599 A TW95133599 A TW 95133599A TW 95133599 A TW95133599 A TW 95133599A TW 200813152 A TW200813152 A TW 200813152A
- Authority
- TW
- Taiwan
- Prior art keywords
- epoxy resin
- resin
- mass
- composition
- group
- Prior art date
Links
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Epoxy Resins (AREA)
Abstract
Description
200813152 九、發明說明: 【發明所屬之技術領域】 成物穩定的㈣狀態的環氧樹脂紐 ,化的環氧樹 地用於半導體用黏晶劑用途中^ 驗成物可較好 【先前技術】 於各_ =性、耐濕性優良,故而使用 高速化的半導體領域; 件’近年來其應用領域正顯微細之設計的元 樹脂’其黏度或者流動料、 方® ’液狀核氧 於處理時需細心的注意。;:=性的因素易於變動, 最需要注意。 、日日固疋於基板上的黏晶材料 近年來伴隨元件的高逮化、 化,而且研究了一種於 /山又化,日日片走向大型 積度的方式。因此對於黏%t σ上積衫個晶片,提高集 求可進—步準確並且高的性能之外’亦要 矽或者氧化鋁等無機= 料樹脂中添加有二氧化 劑’將該黏晶劑塗布、印刷二^導電性填充料的黏晶 該方式難以準確並且高效地安載晶片:然而: 且有產生空隙式、、六φ + 夕層化的日日片’並 能。晶粒位移(dieshift)等問題的可 200813152 為解決上述問題,提案有如 脂塗布於基板上後,以較低溫度加熱方:):將液狀環氧樹 即使之成為所謂的B階狀態,於其上壯恭^失去流動性, 脂完全硬化。該B階化的方法有晶片後’再將樹 化反應之方法,·⑺使硬化溫度如^途強制停止硬 存在,使該反應系統硬化之方法反應系統共同 方法(1),雖然是可適應 彳文獻】)。其中 宜层的太土 w 應糸統的種類較多,並且是 合易的方法,但3階狀態的穩定性不品= 法⑺存在反應系統的種類受限制 ; 定性並不一定充分的問 I且“狀悲的穩 以B f皆狀能;^罟:± 所明穩定性是表示即使 以^白狀恶放置預定時間後,亦表 狀態。若該穩定性較差,則無法以β大 品良率降低。 ㈣W呆存產品,產 裝載W後’ ㈣自B階完全魏 ,,若因製程時間的不足等而使硬化不充,= ^程制,,線結合(_ b〇nding )或者樹脂密封(resin sea、的2程中,有時未硬化成分產生揮發等,導致產 工隙'、產口口的可靠性下降。而期望即使於線結合製 同%進行硬化,亦不會產生空隙等的黏晶劑。 、、 [專利文獻1]日本專利特表2〇〇5 —sl3192號公 【發明内容】 ^因此,本發明的目的在於提供一種可形成穩定的B階 狀L並且k供幾空隙等的硬化物的環氧樹脂組成物以及 包含该壤氧樹脂組成物的半導體用黏晶劑。 200813152 即,本發明是一種組成物,其特徵為包含: (A) 環氧樹脂; (B) 環氧樹脂硬化劑,該(B)環氧樹脂硬化劑的 應性基的當量,相對於(A)環氧樹脂的環氧基的當旦 比為0.8〜L25之量; 田里的 (C) 於25°C下為固體狀的熱可塑性樹脂粒子,相 於(A)環氧樹脂與(B)環氧樹脂硬化劑之總計1〇〇質旦 馨份,熱可塑性樹脂粒子為3質量份〜60質量份;以及貝里 (D) 環氧樹脂硬化促進劑,相對於(A)環氧樹脂與 (B)環氧樹脂硬化劑之總計則質量份,環氧樹脂石^匕 促進劑為0.1質量份〜1 〇質量份。 較好的是,(C )於2 51下為固體狀的熱可塑性樹脂粒 子送自曱基丙烯酸樹脂(Methacrylic resin)、笨氧基樹月^ (phenoxyresin)、以及丁二烯樹脂(butadieneresinH: 具有預定的分子量以及粒徑。 上述士發明的組成物,於B階狀態下的保存穩定性優 ⑩ I可提网半導體產品的良率。進—步,通過調整為預定 的揮發成分以及黏度,可提供即使於樹脂密封製程的同時 進打硬化之情形時,亦幾乎無空_硬化物。 【實施方式】 $於本發明中’作為(A)環氧樹脂,可使用眾所周知 j環,樹脂。例如可列舉··酚醛清漆型、雙酚型、聯笨型、 本知务纟元基(phenol aralkyl)型、二環戊二稀型、萘型、 8 200813152 含胺基,、後述的㈣(silieQne)改性環氧樹脂以及它們的 混合物等。其中較好的是雙紛A型、雙酉分F型以及石夕鋼 性環氧樹脂。又,於25tT,較好的是液狀樹脂,更好的 是黏度小於等於l()()Pa.s,更好的是黏度小於等於1^· S ° 卫)_故氧樹脂辟彳卜n 孙硬化劑(B)可使用眾所周知的硬化劑,例如可列舉·· 苯酴樹脂(衫㈣的糊改性苯麵脂)、咖、以^胺 類。其中考慮到使硬化性與B階狀態的穩定性平衡,較好 的是笨酴拍m以及石夕酉同改性苯酴樹脂。言亥苯龄樹脂可列 舉·紛齡清漆型、雙酉分型、三羥基苯基甲烧型、萘型、環 戊稀孓笨知芳纟兀基型等,可單獨使用或者亦可混合使 ^兩=或者兩種以上的這些樹脂。其中較好的是祕清漆 p、又讲型,又,較理想的是黏度於loot:下小於等於10 a· 特別理想的是黏度小於等於1Pa· s。 上述(A)環氧樹脂以及⑻硬化劑,特別 脂的至少—部分或者全部,為於分子中具有石夕酮 ^性樹脂。該糊改性樹賴—個例子,可列 料合物與_㈣喊反應所得的共聚合物。 方曰知聚合物可列舉下式(3)或者⑷的化 OR11 OR11200813152 IX. Description of the invention: [Technical field of invention] The epoxy resin of the (four) state is stabilized, and the epoxy tree is used for the use of the adhesive for semiconductors. 】 It is excellent in _=ability and moisture resistance, so it is used in the field of high-speed semiconductors. In recent years, its application field is microscopically designed as a meta-resin, its viscosity or flow material, square® 'liquid nucleus oxygen Careful attention should be paid to handling. ;:= Sexual factors are subject to change, the most important thing to note. In recent years, the die-bonding materials that have been fixed on the substrate have been accompanied by high-capacity and high-capacity materials, and a way to make large-scale accumulations of Japanese and Japanese films has been studied. Therefore, for the accumulation of a wafer on the viscosity %t σ, the improvement of the collection can be carried out with accurate and high performance, and the addition of a second oxidant to the inorganic resin such as alumina can be applied to the adhesive. Printing the die-bonding of the conductive filler This method makes it difficult to mount the wafer accurately and efficiently: however: there is a space-type, six φ + 层 layered Japanese-day film. Problems such as die shift (20081152) In order to solve the above problems, it is proposed to heat the resin at a lower temperature after the grease is applied to the substrate:): Even if the liquid epoxy tree becomes a so-called B-stage state, On the top, it loses fluidity and the fat is completely hardened. The B-stage method has a method of 're-synthesis reaction after the wafer, and (7) a method of solidifying the hardening temperature such as forcibly stopping the hardening of the reaction system, and the reaction system is a common method (1), although it is adaptable彳 Literature]). Among them, there are many types of Taitu w., and it is a method of Yiyi, but the stability of the third-order state is not the same as the method (7), the type of reaction system is limited; the qualitative is not necessarily sufficient. And "the sorrow of stability is B F all can be; ^ 罟: ± The stability indicated is that even after placing a white sin for a predetermined period of time, it is also a state. If the stability is poor, it cannot be a big beta. The yield is reduced. (4) W-dwelling products, after loading and loading W' (4) Since the B-order is completely Wei, if the process time is insufficient, the hardening is not charged, the system is fixed, the line is combined (_ b〇nding) or In the resin sealing (resin sea, the unhardened component may volatilize, etc., resulting in a productivity gap, and the reliability of the production port is lowered. It is expected that even if the wire bonding system is cured at the same rate, it does not occur. The present invention provides a stable B-order L and k. An epoxy resin composition containing a hardened material such as a void, and the like The present invention is a composition for a semiconductor. 200813152 That is, the present invention is a composition comprising: (A) an epoxy resin; (B) an epoxy resin hardener, and (B) an epoxy resin hardener The equivalent of the basic group is 0.8 to L25 relative to the epoxy group of the epoxy resin of (A); the thermoplastic resin particle of the solid (C) at 25 ° C in the field, phase (A) epoxy resin and (B) epoxy resin hardener, a total of 1 〇〇 馨 馨 ,, thermoplastic resin particles are 3 parts by mass to 60 parts by mass; and Berry (D) epoxy resin hardening promotion The amount of the agent is 0.1 parts by mass to 1 part by mass based on the total mass parts of the (A) epoxy resin and the (B) epoxy resin hardener. Preferably, (C) The thermoplastic resin particles which are solid at 2 51 are supplied from Methacrylic resin, phenoxyresin, and butadienesinH (having a predetermined molecular weight and particle diameter. The composition invented by Shishi has excellent storage stability in the B-order state. The yield of the body product. Further, by adjusting to a predetermined volatile component and viscosity, it is possible to provide almost no sclerosing even when the resin sealing process is performed while hardening. [Embodiment] In the present invention, 'as the (A) epoxy resin, a well-known j-ring or a resin can be used. For example, a novolac type, a bisphenol type, a biphenyl type, a phenol aralkyl type, and the like can be used. A cyclopentadiene type, a naphthalene type, 8 200813152 an amine group, a (sil) Qne modified epoxy resin described later, a mixture thereof, and the like. Among them, the best ones are the double type A, the double type F type and the Shixi steel epoxy resin. Also, at 25tT, preferably a liquid resin, more preferably a viscosity of less than or equal to 1 () Pa.s, more preferably a viscosity of less than or equal to 1 ^ · S ° Wei) n The sun-hardening agent (B) can use a well-known hardening agent, for example, a benzoquinone resin (paste-modified benzene surface fat of a shirt (4)), a coffee, and an amine. In view of the balance between the hardenability and the stability of the B-stage state, it is preferred to use a clumpy m and a modified benzoquinone resin. The styrene resin can be exemplified by a varnish type, a double bismuth type, a trihydroxy phenyl ketone type, a naphthalene type, a cyclopentanthene sulfonium group, or the like, and can be used singly or in combination. ^Two = or more than two of these resins. Among them, the secret varnish p and the type are better. Moreover, the viscosity is less than or equal to 10 a. The viscosity is less than or equal to 1 Pa·s. The above (A) epoxy resin and (8) a curing agent, at least a part or all of the special fat, have a sulphuric acid resin in the molecule. The paste-modified tree is an example of a copolymer which can be reacted with a compound of _(iv). Fang Zhizhi polymer can be exemplified by the following formula (3) or (4) OR11 OR11
R12 OR1»R12 OR1»
R12 ⑶R12 (3)
XX
X 200813152X 200813152
其中,R11於苯酚樹脂之情形時為氫原子,於環氧樹脂 之情形時為以下式所表示的含環氧乙烷基的基, · R12為氫原子或者曱基;X為氫原子或者溴原子;η為 大於等於0的整數,較好的是0〜50的整數,特別好的是 1〜20的整數。 作為其他的芳香族聚合物,可列舉下式(5)〜(8) 之含有烯基的化合物。Wherein R11 is a hydrogen atom in the case of a phenol resin, an oxiranyl group represented by the following formula in the case of an epoxy resin, · R12 is a hydrogen atom or a fluorenyl group; and X is a hydrogen atom or a bromine group. The atom; η is an integer greater than or equal to 0, preferably an integer of 0 to 50, particularly preferably an integer of 1 to 20. Examples of the other aromatic polymer include an alkenyl group-containing compound of the following formulas (5) to (8).
10 20081315210 200813152
斤其中,關於R1〗、r】2、X以及n,如上所述;111為) 於等於〇的整數,較好的是0〜5的整數,特別好的是 或者1 與上述芳香族聚合物反應的有機聚矽酮烷以式(9)」 不 (9) (R13WR14)bSicva.b)/2 其中,R13為氫原子,或者含有胺基、環氧基、羥基或 者羧基的有機基,或者烷氧基;R]4為經取代或者未經取科 的1價烴基、經基、烧氧基、或者鏈烯氧基(alkenyl〇xy); a、b 為滿足 O.OOlSa^l、1 ^b^3、1 <a+b^4 的數。 分子中的矽原子數為1〜1000,1分子中與石夕原子直接鍵洽 的R13為大於等於1。 此處,作為R13之含有胺基的有機基,可例示下述基, 此處,c為1、2或者3。 200813152In the case of R1, r, 2, X and n, as described above; 111 is an integer equal to 〇, preferably an integer of 0 to 5, particularly preferably or 1 with the above aromatic polymer The reacted organic polyfluorenone is a compound of the formula (9): (9) (R13WR14)bSicva.b)/2 wherein R13 is a hydrogen atom or an organic group containing an amine group, an epoxy group, a hydroxyl group or a carboxyl group, or Alkoxy; R]4 is a substituted or unsubstituted monovalent hydrocarbon group, a trans group, an alkoxy group, or an alkenyl group (alkenyl〇xy); a, b is satisfied with O.OOlSa^l, 1 The number of ^b^3, 1 <a+b^4. The number of germanium atoms in the molecule is from 1 to 1000, and R13 in a molecule directly bonded to the Shi Xi atom is greater than or equal to 1. Here, the organic group containing an amine group of R13 may, for example, be a group wherein c is 1, 2 or 3. 200813152
作為含有環氧基的有機基,可例示下述基,此處C為 1、2或者3。The epoxy group-containing organic group may, for example, be a group wherein C is 1, 2 or 3.
作為含有羥基的有機基,可例示下述基,此處,d為0、 1、2或者3,e為1、2或者3。 200813152 WA ^ ^ Λ.ΛThe organic group having a hydroxyl group may, for example, be a group wherein d is 0, 1, 2 or 3, and e is 1, 2 or 3. 200813152 WA ^ ^ Λ.Λ
HO —(CH2)d - —(c2)-oh 作為含有羧基的有機基,玎例示下述基,此處,f為1 10的整數。HO - (CH2)d - (c2)-oh As the organic group having a carboxyl group, hydrazine is exemplified by the following group, and f is an integer of 1 10 here.
-CH2i—COOH 並且,作為烷氧基,可列舉:甲氧基、乙氧基、正丙 氧基等碳數為1〜4的烷氧基。 並且,作為Ri4的經取代或者未經取代的丨 較好的疋石反數為1〜1 Q的基,例如可列舉··曱義、、土 正丙基、異丙基、正丁基、異丁基、第三丁基:、、乙基、 戊基、己基、環己基、辛基、癸基等烧基;^戊基、新 基、丙稀基、丁烯基等烯基;苯基、甲苯義j基、歸兩 基苯乙基等芳烧基或者上述烴基的氫原子的芳基,笨曱 全部被*原子等取代的*代1倾基。’、…部分或者 1 i a、b為上述之值,較好的是〇.〇k 働^理?5如兑!,較理想心^-CH2i-COOH Further, examples of the alkoxy group include alkoxy groups having a carbon number of 1 to 4 such as a methoxy group, an ethoxy group or a n-propoxy group. Further, the substituted or unsubstituted anthracene of Ri4 is preferably a group having an inverse number of 1 to 1 Q, and examples thereof include a deuterium, a tert-propyl group, an isopropyl group, an n-butyl group, and the like. An isobutyl group, a tert-butyl group, an ethyl group, a pentyl group, a hexyl group, a cyclohexyl group, an octyl group, a decyl group, etc.; an ethyl group such as a pentyl group, a novel group, an acryl group, a butenyl group; The aryl group such as a base, a toluene group, an aryl group such as a benzyl group or a aryl group of a hydrogen atom of the above hydrocarbon group, and a ruthenium group which are all substituted by a * atom or the like. ‘,... part or 1 i a, b is the above value, preferably 〇.〇k 働^理?5如兑!, more ideal heart^
]里4的是矽原子數為5〜2〇〇。作盎、^數為2〜 '"有機聚矽 13 200813152 I--- 氧烷可列舉式(10)或者(11)的化合物。 [化 14]In the 4 is the number of 矽 atoms is 5~2〇〇. An angling number is 2~ '"Organic polyfluorene 13 200813152 I--- Oxane may be a compound of the formula (10) or (11). [Chem. 14]
HH
o 15115 R—siIRo 15115 R-siIR
〇 151 R—Si—H151 151 R-Si-H
Η 15-15 RIs'— R \iy ο [化 15]Η 15-15 RIs'— R \iy ο [Chem. 15]
〇 15115 R—s'丨 R I ,6 ,R〇 15115 R—s'丨 R I ,6 ,R
ο 15一15 RIS1— Rο 15-15 RIS1— R
R 15115 R——si— R \^/ T- 太 11 /\ 其中,R16相當於上式(9)的R13,為含有胺基、環 氧基、羥基或者羧基的1價烴基。R15相當於式(9)的R14, 為經取代或者未經取代的1價烴基,較好的是曱基或者苯 基;p為0〜1000的整數,較好的是3〜400的整數;q為 0〜20的整數,較好的是0〜5的整數。 如此之有機聚矽氧烷的例可列舉下述之例。 [化 16] 14 200813152R 15115 R - si - R \^/ T- too 11 /\ wherein R16 corresponds to R13 of the above formula (9) and is a monovalent hydrocarbon group containing an amine group, an epoxy group, a hydroxyl group or a carboxyl group. R15 corresponds to R14 of the formula (9), which is a substituted or unsubstituted monovalent hydrocarbon group, preferably a mercapto group or a phenyl group; p is an integer of 0 to 1000, preferably an integer of from 3 to 400; q is an integer of 0 to 20, preferably an integer of 0 to 5. Examples of such an organic polyoxane include the following examples. [化16] 14 200813152
〇 3 - 3 H L H c—si—c I H 〇 3 ^ 3 H L H c—silc H 3 1 3 H L H clsl—c 120〇 3 - 3 H L H c-si-c I H 〇 3 ^ 3 H L H c-silc H 3 1 3 H L H clsl-c 120
393HL H c—si—c I H393HL H c-si-c I H
〇 3 - 3 H L H c—si—c i H 〇 3 - 3 H L H c—sl—c 丨 50 il-o c—si-〇 3 - 3 H L H c-si-c i H 〇 3 - 3 H L H c-sl-c 丨 50 il-o c-si-
H;-o c—si—H c—si—c Η Η - Η clsllc 50 0· 3 - 3 H L H clsi—c Η Hi-H clsloolcH;-o c-si—H c—si—c Η Η - Η clsllc 50 0· 3 - 3 H L H clsi—c Η Hi-H clsloolc
式(9)之有機聚矽氧烷的分子量較理想的是100〜 100000。於有機聚矽氧烷的分子量為上述範圍内之情形 時,藉由與該有機聚矽氧烷反應的芳香族聚合物的結構或 者分子量,而出現有機聚矽氧烷於基質中均勻分散的均勻 結構,或者有機聚矽氧烷於基質中形成微細的層分離的海 15 200813152 …—厂--島結構。 於有機聚石夕氧燒的分子旦私 子量為1GG〜1GGGG之情形日^二、之情形時’特別是其分 有機聚魏烧的分子量較結構;另—方面’於 1 〇〇〇〜100000之情形時形成海月島幵特別是其分子量為 海島結構的哪—方可根據用途^擇3均Ϊ結構或是The molecular weight of the organopolyoxane of the formula (9) is preferably from 100 to 100,000. When the molecular weight of the organopolyoxane is within the above range, the uniformity of uniform dispersion of the organopolyoxane in the matrix occurs by the structure or molecular weight of the aromatic polymer reacted with the organopolysiloxane. Structure, or organic polyoxyalkylene to form a fine layer of separated sea in the matrix 15 200813152 ... - plant - island structure. In the case of organic poly-stone oxy-energy, the molecular weight of the molecule is 1GG~1GGGG. In the case of the second day, the molecular weight of the organic poly-Wei-burn is higher than that of the structure; the other aspect is in 1 〇〇〇~ In the case of 100,000, the formation of the sea moon island, especially the molecular weight of the island structure, can be selected according to the use of the 3 uniform structure or
若八;曰士 :: 硬化物剛硬且變脆;另-方面, 右刀子置大於100000,則海島 合 万面, 力,故而不好。 曰產生局。卩性的應 使上述方香族聚合物與有 使用眾所周知的太、土 y I , /手^兀汉“白勺方去,可 P入/的方列如於鈾系觸媒的存在下,使芳夭 “ &物財機料魏產生加献應。 方曰 組成物中’於添加⑻硬化劑之情形時, νλ、ί羊1月日與(Β)硬化劑的添加比例,較5里想的是以 、中的環氧基的當量與硬化劑中的反應性基的告旦比 (環氧樹脂)/ (硬化劑)9.25,特^相 伙=$ (環氧基)/(硬化劑)^1.1。於當量比並非^ #'圍之,科,*在有-部分未反應,導致硬化物的性;: 見故F平’進—步導致使用該硬化物的半導體裝置匕 出現故障的可能。 % 塑性樹脂粒子 士本發明之組成物的特徵為含有粒子狀的(C)熱可糊 性樹脂粒子。該熱可塑性樹脂於25〇c下為固體狀。即,^ 保存中以及塗布於基板上的溫度下’不會形成與環氧樹脂 16 200813152If eight; gentleman :: hardened material is hard and brittle; on the other hand, if the right knife is set to more than 100,000, then the island has a total surface, force, so it is not good.曰 Produce a bureau. The above-mentioned scented aromatic polymer should be used in the presence of uranium-based catalysts, such as uranium-based catalysts, which are known to be used in the presence of uranium-based catalysts. Let Fang Fang " & In the case of the addition of the (8) hardener in the composition of the square ,, the ratio of the addition of the νλ, ί sheep to the Β hardener is the equivalent of the epoxy group and the hardener. The reactive group in the reactive ratio (epoxy resin) / (hardener) 9.25, special ^ xiang = $ (epoxy) / (hardener) ^ 1.1. When the equivalent ratio is not ^#', the section, * is unreacted in the - part, resulting in the properties of the hardened material; seeing the fact that the semiconductor device using the hardened material may fail. % Plastic Resin Particles The composition of the present invention is characterized in that it contains particulate (C) hot pasteable resin particles. The thermoplastic resin was solid at 25 ° C. That is, ^ during storage and at the temperature applied to the substrate ' does not form with epoxy resin 16 200813152
(A)相溶的樹脂相。作為該熱可塑性樹脂,可以是眾所 周知的樹脂,例如可列舉:AAS樹脂、AES樹脂、AS樹 脂、ABS樹脂、MBS樹脂、氯乙稀樹脂、醋酸乙烯酯樹脂 (vinyl acetate resin )、曱基丙烤酸函曰樹月曰、本乳基树月曰、 聚丁二烯樹脂、各種氟樹脂、各種矽酮樹脂、聚縮酸、各 種聚醯胺、聚醯胺醯亞胺(polyamide-imide)、聚醯亞胺、 聚醚醯亞胺(polyetherimide)、聚醚醚酮(polyether ether ketone)、聚乙烯、聚氧化乙烯(polyethylene oxide)、聚對 苯二曱酸乙二醇酯(polyethylene terephthalate )、聚碳酸 酯 聚笨乙烯、聚砜、聚醚颯、聚乙烯醇、聚乙烯醚、聚 乙烯丁醛(polyvinyl butyral )、聚乙烯曱搭(p〇iyVinyi formal )、聚笨醚(p〇iyphenylene oxide )、聚苯硫醚 (polyphenylene sulfide)、聚對笨二曱酸丁二酯、聚丙烯、 聚甲基戊烯(P〇lymethylpentene)等。於上述樹脂中,較 ^想的是甲基丙烯酸樹脂、苯氧基樹脂、丁二稀樹脂、聚 者?們的共聚物。或者’亦可為粒子的内核(芯) 的:構。於 mole=c^'的上述各種熱可塑性= 、 )燕可塑性樹脂粒子的形狀可炎A , 口 或者稜柱狀、不定形狀、碎屑狀/為近球狀、圓柱狀 用途中,較好的是近球狀以及=龄,於黏晶劑 較好的是根據用途適宜調整、 (= 兄角部的不定形狀。 1C)熱可塑性樹脂粒子 17 200813152 .-i ,平均粒徑。通常,最大粒#,即9δ%累積粒徑,較為理 4的疋小於寺於10叫,特別理想的是小於等於5,;平 均粒徑,即中值粒徑,較為理想的是〇1 _〜5㈣,特別 S想μιη〜2 μπι。於最大粒#大於上述上限值或者 ^均粒上限值之情形時,存在於β階化階段或 f硬化階段中,粒子熱可難樹脂的—部分並未充分膨潤 4者溶解而殘留,並損害硬化後的組成物特性的可能。另 _ 方面’於平均粒徑小於上述下限值之情形時,存在組成 _黏度變大,操作性顯著變差的可能。另外,粒徑的測 定可错由電子顯微鏡觀察、f射繞射型散射法(ι· diffraction scattering me1:hod)進行。 特別是將本發明之組成物用於黏晶劑中之情形時,最 大粒徑較為理想的是施於基板上的黏 者寫以下,特別理想的是該厚度的·或者^以下戈 平均粒徑較為理想的是該厚度的1G%或者1G%以下,特別 理想的是該厚度的5%或者5%以下。於最大粒徑大於上述 ❿丨限值或者平均粒徑大於上述上限值之情科,存在於B 階化階段或者硬化階段,粒子狀熱可塑性樹脂的一部分未 充分膨潤或者溶解而殘留,引起硬化後的黏晶劑的外觀不 良、或晶片表面破損或者外露等問題的可能。 (C)熱可塑性樹脂粒子也可具有交聯結構。妖而, 由於較好的是形成熱可塑性樹脂⑹均勻分散於環減 脂網狀結構中的結構,故而較好的是交聯度較低,更好的 是無交聯的線狀分子鏈。 18 200813152 (c)熱可錄樹祕子的分子量,可依據樹脂的種 類加以適宜。典制是Μ苯乙烯換算的數量平均八 子量為1〇,〇〇〇〜1〇,〇〇〇,000,較好的是1〇,〇〇〇〜1〇〇〇〇〇〇刀 重量平均分子量為100,000〜100,000,000,較好’ 1〇〇,〇〇〇〜10,_,_。於數量平均分子量小於上述下限= 或者重量平均分子量小於上述下限值之情形時,存在由於 Τ1變得過於低溫而使Β階於早期出現,故而Α階狀能變 得不穩定的可能。並且存在無法獲得充分的Β階狀態的硬 度,—特別是於黏晶材料用途中產生空隙或流出或者晶粒位 移等問題的可能m於數量平均分子量大於上述 上限值,或者重量平均分子量A於上述上限值之情形時, =子在们變高,與T2的差小於8(rc,接近c階的出現溫 又’而使B階狀態變得不穩定的可能。並且存在於B階化 後或者C階化後,粒子熱可塑性樹脂的—部分阻礙環氧樹 脂網狀結構之形成的可能。 人為了獲得穩定的B階狀態,(c )熱可塑性樹脂粒子的 各量,相對於⑷環氧樹脂與⑻環氧樹脂硬化劑之換 計1〇〇質量份’㈣量份〜60質量份(包含實施例1〇、 11) ’較好的是5質量份〜5〇質量份,更好的是1〇質量份 〜30質量份。於含量少於上述下限值之情形時,存在益法 獲得充分的B階狀㈣硬度,特別於黏晶材料用途中產生 ,隙或流出或者晶粒位移等問題的可能。另—方面,於含 里夕於上上限值之情形時,存在B階狀態變得過硬,特 別於黏晶材料用途中產生黏著不充分制題的可能。 19 200813152 ,好的是對(c)熱可難樹脂粒子進行表面處理。 料=理可使縣所周知的表面處㈣,藉由眾所周知的 田表面處理刎,杈好的是矽烷偶合劑,例如可使 ue基三甲氧基石夕烧、乙稀基三乙氧基石夕⑥、乙烯基 :切广虱基乙氧基)石夕烷、β_(3,4_環氧環己基)乙基三甲氧 ::二:縮水甘油氧基丙基三曱氧基矽烷、γ-縮水甘油 =土二二乙氧基魏、γ·縮水甘油氧基丙基三乙氧基 二二二1基丙_氧絲基甲基二甲氧基㈣、γ-甲基 基三甲氧基魏、m丙烯酿氧基丙基甲 Γ魏、γ_?基丙_氧基丙基三乙氧基石夕烧、 :乙基)γ-胺基丙基甲基二甲氧基魏、關胺基乙 二=基三甲氧綱、Ν伽基乙基)γ_胺基丙基三 元、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙 ϊίΓΓ二苯基个胺基丙基三甲氧基矽烷,毓基丙基 基…甲基丙心丙=5用:乙稀基三曱氧 油氧基丙基三曱氧基丙曱^ 苯基个胺基丙基三甲氧基二基,三甲氧綱、Ν_ 俨。矣而考柿十n 4 70 丫—疏基丙基三曱氧基石夕 二==:以或f式處理之任-種。 脂粒子的表面積,典可取決於熱可塑性樹 10。重量份,為(U重d目對於㈣偶合劑之總重量 册姻戰 5重量份。 (D)作為硬化促進 可使用眾所周知的硬化促進 20 200813152 ^例如可列舉有機石粦、咪唾(imidazole)、三級胺等驗性 有機化合物。有機碟之例子可列舉:三苯基冑、三丁基鱗、 二苯甲酿基)膦、三(對甲氧基苯基)膦、三(對乙氧基 ,土)膦、三苯基膦-三苯基硼酸酯衍生物、四苯基膦-四苯 基硼酸轉。咪奴例子可列舉:2_甲基十坐、2_乙基味 °坐、乙基+甲基°米唾、2-苯基味口坐、2-苯基-4-甲基咪唑、 Ϊ:祖:基增細、苯基-^其了及^之例子可列舉:三乙胺、节基二甲胺、α-甲基 二氮雜雙環(5AG)十—稀-7等。其中,較 …斗二:四苯基膦-四苯基硼酸酯衍生物或者羥甲基咪唑 何’與作為硬化劑之苯崎脂組合使用。 ^促進劑的添加量,相對於⑷環氧樹脂與 會旦於减对月曰硬化劑之總計100重量份,較理想的是〇·ΐ 於=二!!重I份,特別理想的是G·2重量份〜5重量份。 硬化不奋八刎)於上述下限值之情形時,存在樹脂組成物 在#可能,並且於多於上述上限值之情形時,存 可:曰、、且⑽存性或者6階狀態的穩定性出現問題的 J月b 〇 佶、使^苯®刀树脂為⑻硬化劑之情形時,較好的是 ..φ 7表不的四苯基膦四苯基硼酸酯衍生物 1 =坐特別疋以下式(2)所表示的羥曱基咪唑衍生物 為(D)硬化促進劑。 [化1] 21 200813152(A) a compatible resin phase. The thermoplastic resin may be a well-known resin, and examples thereof include AAS resin, AES resin, AS resin, ABS resin, MBS resin, vinyl chloride resin, vinyl acetate resin, and mercaptopropene baking. Acid function Eucalyptus sinensis, this milk base tree sorghum, polybutadiene resin, various fluororesins, various fluorenone resins, polycondensation acids, various polyamines, polyamide-imide, Polyimide, polyetherimide, polyether ether ketone, polyethylene, polyethylene oxide, polyethylene terephthalate, Polycarbonate polystyrene, polysulfone, polyether oxime, polyvinyl alcohol, polyvinyl ether, polyvinyl butyral, polyvinylpyrene (p〇iyVinyi formal), polystyrene (p〇iyphenylene oxide) ), polyphenylene sulfide, polybutylene dimercaptoate, polypropylene, polymethylpentene (P〇lymethylpentene) and the like. Among the above resins, what are the methacrylic resins, phenoxy resins, butadiene resins, and polymers? Their copolymers. Or ' can also be the core of the particle (core): structure. The above various thermoplastics of mole=c^' =, the shape of the can-plastic plastic resin particles may be inflamed A, mouth or prismatic shape, indefinite shape, crumb shape/near spherical shape, cylindrical shape, preferably The near-spherical shape and the age of the crystal are preferably adjusted according to the use, (= indefinite shape of the corner portion. 1C) thermoplastic resin particles 17 200813152 .-i , average particle diameter. Generally, the maximum particle #, that is, 9δ% cumulative particle diameter, the reason 4 is smaller than the temple at 10, particularly preferably less than or equal to 5; the average particle size, that is, the median diameter, is ideally 〇1 _ ~5 (four), special S wants μιη~2 μπι. When the maximum particle # is larger than the upper limit value or the upper limit of the average particle size, the β-staged stage or the f-hardening stage is present, and the part of the particle heat-hardenable resin is not sufficiently swollen and dissolved and remains. It also impairs the properties of the composition after hardening. On the other hand, when the average particle diameter is less than the above lower limit value, the composition_viscosity becomes large, and the workability is remarkably deteriorated. Further, the measurement of the particle diameter can be performed by an electron microscope observation or a diffraction diffraction method (ι·diffraction scattering me1:hod). In particular, when the composition of the present invention is used in a die bond, the maximum particle size is preferably the following on the substrate, and particularly preferably the average particle diameter of the thickness or It is preferable that the thickness is 1 G% or less, and particularly preferably 5% or less of the thickness. In the case where the maximum particle diameter is larger than the above-mentioned enthalpy limit value or the average particle diameter is larger than the above-mentioned upper limit value, there is a B-staged stage or a hardening stage, and a part of the particulate thermoplastic resin is not sufficiently swollen or dissolved and remains, causing hardening. The subsequent appearance of the adhesive is poor, or the wafer surface is damaged or exposed. (C) The thermoplastic resin particles may have a crosslinked structure. Demon, since it is preferred to form a structure in which the thermoplastic resin (6) is uniformly dispersed in the ring-reduced network structure, it is preferred that the degree of crosslinking is low, and more preferably, there is no crosslinked linear molecular chain. 18 200813152 (c) The molecular weight of the heat recordable tree can be adapted according to the type of resin. The standard system is that the average number of styrene converted by styrene is 1〇, 〇〇〇~1〇, 〇〇〇, 000, preferably 1〇, 〇〇〇~1 重量 weight average The molecular weight is from 100,000 to 100,000,000, preferably '1 〇〇, 〇〇〇~10, _, _. When the number average molecular weight is less than the above lower limit = or the weight average molecular weight is less than the above lower limit value, the Β1 becomes too low and the Β order is formed at an early stage, so that the Α step shape can become unstable. And there is a hardness that cannot obtain a sufficient degree of gradation, especially in the case of voids or outflows or grain displacement in the use of the viscous material, the possibility that the number average molecular weight is greater than the above upper limit, or the weight average molecular weight A is In the case of the above upper limit value, the = sub-members become higher, and the difference from T2 is less than 8 (rc, which is close to the c-order appearance temperature and makes the B-order state unstable) and exists in the B-stage. After the post or C-stage, the particle thermoplastic resin partially blocks the formation of the epoxy resin network structure. In order to obtain a stable B-stage state, (c) the amount of the thermoplastic resin particles, relative to the (4) ring The oxygen resin and the (8) epoxy resin hardener are replaced by 1 part by mass '(four) parts by weight to 60 parts by mass (including the examples 1 and 11)', preferably 5 parts by mass to 5 parts by mass, more preferably It is 1 part by mass to 30 parts by mass. When the content is less than the above lower limit value, there is a sufficient method to obtain sufficient B-stage (four) hardness, especially in the use of the die-bonding material, gap or outflow or grain. Possible problems such as displacement. On the other hand, in the case of the upper limit of the upper limit, there is a possibility that the B-stage state becomes too hard, especially in the use of the adhesive crystal material, which may cause insufficient adhesion. 19 200813152, good is the heat of (c) It is difficult to carry out surface treatment of the resin particles. The material can be made at the surface of the county (4). It is a well-known surface treatment. It is a decane coupling agent, for example, ue-based trimethoxy-stone, B. Dilute triethoxylate 6, vinyl: cut oxime ethoxy) oxalate, β_(3,4-epoxycyclohexyl)ethyltrimethoxy::di: glycidoxypropyl three曱oxydecane, γ-glycidol = earth di二 ethoxy Wei, γ·glycidoxypropyl triethoxy di 222 propyl propyl oxomethyldimethoxy (tetra), γ- Methyl-trimethoxy-Wei, m-propenyloxypropyl-methyl hydrazine, γ-?-propyl-propoxy-triethoxy zeoxime, :ethyl)γ-aminopropylmethyldimethoxy Kewei, guanyl ethane=yltrimethoxy, sigmaethyl) γ-aminopropyl ternary, γ-aminopropyltrimethoxy decane, γ-aminopropyltriethyl hydrazine Aminopropyltrimethoxydecane, mercaptopropyl group...methylpropanol =5 with: ethylenetrimethoxy oxypropyltrimethoxypropenyl phenylaminopropyl Trimethoxydiyl, trimethoxygen, Ν_俨.矣 考 考 考 十 十 十 十 十 十 十 十 十 十 十 十 十 n 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏 疏The surface area of the lipid particles may depend on the thermoplastic tree 10 . The weight part is 5 parts by weight of the total weight of the (4) coupling agent. (D) As the hardening promotion, a well-known hardening promotion can be used. 200813152 ^ For example, organic stone mites and imidazole can be cited. An organic compound such as a tertiary amine. Examples of the organic dish include triphenylsulfonium, tributylsulfonium, diphenylmethylphosphonium, tris(p-methoxyphenyl)phosphine, and tris (pair B). Oxygen, earth) phosphine, triphenylphosphine-triphenyl borate derivative, tetraphenylphosphine-tetraphenylboronic acid. Examples of Mi Nu can be exemplified by: 2-methyl-sit, 2-ethyl-sodium, ethyl-methyl-methyl saliva, 2-phenyl-sodium, 2-phenyl-4-methylimidazole, hydrazine Examples of the ancestors: basal addition, phenyl-- and the examples thereof include triethylamine, benzylamine, α-methyldiazabicyclo (5AG), dec-7. Among them, it is used in combination with tetraphenylphosphine-tetraphenylborate derivative or hydroxymethylimidazole and benzoate as a hardener. ^ The amount of the accelerator added is preferably 100 parts by weight relative to (4) the epoxy resin and the total of 100 parts by weight of the ruthenium-reducing agent, and it is preferable that the weight is 1 part, and the weight is 1 part, particularly preferably G· 2 parts by weight to 5 parts by weight. In the case of the above lower limit value, there is a case where the resin composition is in a possible state, and in the case where it is more than the above upper limit value, it may be: 曰, and (10) or 6th-order state. When the stability of the J month b 〇佶, the benzene о knife resin is (8) hardener, it is better that: φ 7 represents the tetraphenylphosphine tetraphenyl borate derivative 1 = The hydroxymethyl imidazole derivative represented by the following formula (2) is (D) a hardening accelerator. [Chemical 1] 21 200813152
其中,R1〜R8各自 基或者1¾原子。 獨立為氫原子或碳數為1〜1〇的烴 [化2]Wherein R1 to R8 are each a group or a 13⁄4 atom. a hydrocarbon that is independently a hydrogen atom or has a carbon number of 1 to 1 [ [Chemical 2]
烴基。 土,R為碳數為1, ΜΜΑίΜ siJicate)、滑石 r 虱化鎂、矽酸指r :合?料者兩以,充劑可單獨使=Hydrocarbyl group. Soil, R is carbon number 1, ΜΜΑίΜ siJicate), talc r magnesium telluride, tannic acid refers to r: combined materials, the charge can be alone =
以上使用。種或者將組合它們= ’之組成物用於點晶劑中之情形時,上 22 200813152 λ貝 '充d的取大粒位’車父理想 的厚度的2〇〇/。或者2〇%以下日一 1Π〇/ρ;πγ τ 知'別理想的疋该厚度的10% Γο〇 Γ-T J ; ""f J 10〇/〇,^ 。 寺別理想的疋該厚度的5%或者5%以下。於最 =徑二:上述上限值或者平均粒徑大於上述上限值之情 形%,存在給晶片、基板、金線(_ wire)等造成損傷,Used above. When the composition of the combination of them is used in the case of a spotting agent, the upper thickness of the upper portion of the upper portion of the upper portion of the height of the car is 2 〇〇/. Or 2〇% below 1一/ρ; πγ τ know 'don't be ideal 10% of the thickness Γο〇 Γ-T J ; ""f J 10〇/〇,^ . The temple is ideally 5% or less of the thickness. In the case of the most = diameter 2: the upper limit value or the average particle diameter is larger than the above-mentioned upper limit value, there is damage to the wafer, the substrate, the gold wire (_ wire), and the like.
^於無機質填充劑與如外的部分的邊界產生局部性庫 力,而損害半導體裝置之功能的可能。 〜 —^述石夕烧偶合劑’例如可列舉:縮水甘油氧基丙基 :曱氧基魏、γ-縮水甘油氧基丙基甲基二乙氧基魏、丫_ 縮水甘油氧基丙基三乙氧、對苯乙稀基三甲氧基石夕 烷、γ-曱基丙烯醯氧基丙基甲基二曱氧基矽烷、γ_甲基丙 烯醯氧基丙基三甲氧基矽烷、γ_甲基丙烯醯氧基丙基曱基 二^氧基矽烷、γ-曱基丙烯醯氧基丙基三乙氧基矽烷、γ— 丙稀酿氧基丙基三曱氧基石夕烷、Ν_β(胺基乙基)丫_胺基丙基 I基一曱氧基矽烷、Ν_β(胺基乙基)γ-胺基丙基三曱氧基矽 ^ Ν_β(胺基乙基)γ-胺基丙基三乙氧基石夕院、γ_胺基丙基 三曱氧基矽烷、γ-胺基丙基三乙氧基矽烷、Ν_苯基_γ_胺基 丙基三甲氧基矽烷、γ-巯基丙基曱基二曱氧基矽烷、γ-巯 車乂好的7ζ上述|機質填充劑使用預先以利完系偶合劑 進^表面處_填充劑。更好的是,預先對⑷成分 之壤乳樹脂與以偶合舰行表面處理的填充劑,於減壓下 進行混煉處理較為理想。藉此可使填充絲面與環氧樹脂 的界面成為的狀態,而格外提高耐濕可靠性。 23 200813152 ' r 基丙基二甲氧基奶完、雙(三乙氧基丙基)四硫化物、丫-異氮 酸_丙基^ 3 7# 二^乳基矽烷等。這些矽烧偶合劑可單獨使用一 種:亦可組合兩種或者兩種以上使用。其中較好的是使用 γ-細水甘油氧基丙基三曱氧基矽烷。 作為!機填充劑,較好的是二氧化石夕,相對於(Α) (D)之總计1〇〇質量份,添加1質量份〜4⑻質量份, 較好的是添加10質量份〜200質量份。The local reservoir force is generated at the boundary between the inorganic filler and the outer portion, which impairs the function of the semiconductor device. ~ - ^ 述 夕 烧 偶 ' ' 例如 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Triethoxy, p-vinylethylene trimethoxy oxalate, γ-mercapto propylene methoxy propyl methyl decyloxy decane, γ-methacryloxypropyltrimethoxy decane, γ_ Methyl propylene methoxy propyl decyl dioxo decane, γ-mercapto propylene methoxy propyl triethoxy decane, γ propylene methoxy propyl tri methoxy oxane, Ν _ β ( Aminoethyl) hydrazine-aminopropyl I-monomethoxy decane, Ν_β(aminoethyl)γ-aminopropyltrimethoxy 矽^Ν_β(aminoethyl)γ-aminopropyl Triethoxy oxime, γ-aminopropyltrimethoxy decane, γ-aminopropyltriethoxydecane, Ν_phenyl_γ-aminopropyltrimethoxydecane, γ- Mercaptopropyl decyl decyloxy decane, γ-巯 乂 7 ζ ζ ζ 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机 机More preferably, it is preferred to carry out the kneading treatment under the reduced pressure on the pre-wetting of the (4) component and the filler treated by the coupling ship surface. Thereby, the interface between the filling surface and the epoxy resin can be brought into a state, and the moisture resistance reliability is particularly improved. 23 200813152 'r-propyl propyl dimethoxy milk, bis(triethoxypropyl) tetrasulfide, hydrazine-isoxanoic acid _propyl^ 3 7# bis-lacyl decane. These simmering couplers may be used singly or in combination of two or more. Of these, it is preferred to use γ-glycidoxypropyltrimethoxy decane. As! The filler is preferably a sulphur dioxide, and is added in an amount of 1 part by mass to 4 parts by mass based on 1 part by mass of the total amount of (Α) (D), preferably 10 parts by mass to 200 parts by mass. Share.
ίά^Α± —除上述各成分以外,亦可於本發明之組成物中,以不 才貝口本免明之目的之量添加添加劑。添加劑包含:石夕炫偶 &阻燃劑、離子捕捉劑(i〇n打叩吨邮)、犧、著色劑、 助黏劑等。 一上述矽烷偶合劑,例如可列舉:γ_縮水甘油氧基丙基 二曱氧基矽烷、γ-縮水甘油氧基丙基曱基二乙氧基矽烷、γ_ 細水甘油氧基丙基三乙氧基矽烷、對苯乙烯基三曱氧基矽 烷、γ-曱基丙烯醯氧基丙基曱基二曱氧基矽烷、曱基丙 烯醯氧基丙基三甲氧基矽烷、γ_甲基丙烯醯氧基丙基甲基 二乙氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、γ_ 丙烯醯氧基丙基三甲氧基石夕烧、Ν也胺基乙基片胺基丙基 曱基二曱氧基矽烷、Ν-β(胺基乙基)胺基丙基三曱氧基矽 烷、N-β(胺基乙基)γ_胺基丙基三乙氧基矽烷、丫_胺基丙基 二曱氧基矽烷、γ-胺基丙基三乙氡基矽烷、Ν_苯基1_胺基 丙基二曱氧基矽烷、γ_毓基丙基甲基二曱氧基矽烷、丫-巯 基丙基三曱氧基矽烷、雙(三乙氧基丙基)四硫化物、I異氰 24 200813152 1 酸丙基二乙氧基矽烷等。這些矽烷偶合劑可單獨使用/ 種,亦可組^兩種或者兩種以上使用。其中較好的是使用 γ-縮水甘油氧基丙基三甲氧基石夕炫。 於使用上述偶合劑之情形時,其使用量,相對於上述 (Α)〜(D)之總計100質量份,通常為〇」質旦〜孓〇 質量份,較好的是0·3質量份〜3·〇質量份。、里刀 組成物的製備ά ά Α — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — 。 。 。 Additives include: Shi Xi Xuan couple & flame retardant, ion trapping agent (i〇n snoring), sacrifice, coloring agent, adhesion promoter and so on. One of the above decane coupling agents may, for example, be γ-glycidoxypropyl dimethoxy decane, γ-glycidoxypropyl decyl diethoxy decane, γ _ glyceroloxy propyl triethyl ethane. Oxydecane, p-styryl tridecyloxydecane, γ-mercapto propylene methoxypropyl decyl decyloxy decane, mercapto propylene methoxy propyl trimethoxy decane, γ-methyl propylene醯-methoxypropyl methyldiethoxy decane, γ-methyl propylene methoxy propyl triethoxy decane, γ propylene methoxy propyl trimethoxy oxalate, oxime amino ethyl phenamine Propyl decyl decyloxydecane, Ν-β(aminoethyl)aminopropyltrimethoxy decane, N-β(aminoethyl)γ-aminopropyltriethoxydecane , 丫-aminopropyl dimethoxy decane, γ-aminopropyl triethyl decyl decane, Ν phenyl 1 - aminopropyl dimethoxy decane, γ 毓 propyl propyl methyl a decyloxydecane, a fluorenyl-mercaptopropyltrimethoxy decane, a bis(triethoxypropyl)tetrasulfide, and an isocyanide 24 200813152 1 acid propyl diethoxy decane. These decane coupling agents may be used singly or in combination of two or more. Of these, it is preferred to use γ-glycidoxypropyltrimethoxyxanthene. In the case of using the above coupling agent, the amount thereof is usually 〇"quality" to 孓〇 part by mass, preferably 0.3 parts by mass, based on 100 parts by mass of the above (Α) to (D). ~3·〇 parts by mass. Preparation of the inner knife
本發明之組成物,可以眾所周知財法,例如使用混 合器、輥等,混合各成分(a)、(c)以及(D),於使用 之情形時亦混合⑻以及上絲意成分而獲得。根據需 要可控制混合順序、時間、溫度、氣壓等條件。 較好的是於上述混合前,於減壓下,典型的是小於等 於1〇mmHg,較好的是小於等於5mmHg下,自各成分中 除去揮發成分。於該屡力下,對於(A)、(B ° 於 溫度12(TC〜17(TC,較好的是刚。c〜16()t:的狀能下放置 4 ]、時〜8小時左^,對於(C)粒子狀熱可塑性樹脂,於 80 C 120 C下放置20小時〜3〇小時。藉此,可於後述的 TGA測定中,使減少量小於等於預定量。 將本1明之組成物裝入銘掛鋼(aiuminiumcen)中, 以空的鋁坩鍋為參照試料,於空氣中一面以1〇。〇/分鐘的 $度自25C升溫至3〇0°C —面進行DSC測定時,於(A) %氧樹脂的硬化發熱峰值的更低溫侧觀察到至少一個發熱 丰值。遠發熱峰值,例如如圖1所示,與(A)環氧樹脂 的發熱峰值相比總熱量較小。於該發熱反應期間 ,通過顯 25 200813152 -----厂 . V. ...v.. :. ... .. - ..- ' . 微鏡觀察發5見(〇熱可塑性樹脂粒子得以可塑化並膨潤, =成人(A)環氧樹脂等半混合之相,組成物變為B階狀 態。較好的是,上述低溫側的發熱峰值的峰值溫度(T1) 大方、等於8〇 C ’較好的是大於等於9〇。〇,並且較硬化發熱 - ,值溫度(T2)低70°C〜1HTC或者1HTC以上,較好的 是低8〇°C〜100°c或者loot:以上。如此般,(C)熱可塑 性樹脂粒子,自室溫(25。〇至該發熱反應發生前^止了 φ 並未與環氧樹脂(A)混和,故而組成物的a階穩定。進 步’低溫側發熱反應是基於相變(phase change )的反應, 並非基於硬化反應等化學反應的反應,並且與環氧樹脂的 硬化反應獨立,故而可獲得B階的穩定性。 較好的是,將本發明之組成物裝入鋁坩鍋中,以空的 紹掛鋼為參照試料,於空氣中n1(rc/分鐘的速度自 25°ί升溫至3〇〇t: 一面進行TGA測定時,至20〇°C為止的 貝里減小於等於1% ’最好的是小於等於〇 。質量減 少的主要是組絲巾的揮發成分發生揮發。作為該揮 發成分,例如可列舉:環氧樹脂、環氧樹脂硬化劑、熱可 脂粒子的低分子量成分、纟减物巾的其他成分的合 成中所使用的溶劑等。上述質量減少量,如上所述,可通 巧先將環氧獅組祕的各成分,於減壓加 置 去==分而達到。藉此,於晶片裝載後的製 V結 樹脂密封的製程㈣占晶劑承受高溫, 歹"50C〜2GGC^溫時’可減小黏晶劑中的揮發成分 26 200813152 f化=導致空隙產生的可能,可於線結合製程或者樹月旨免 封之衣程的=時進行某種程度的硬化,可縮短製程時間Γ 又,於空氣中—面以1(rc/分鐘的速度自25。匸 一面進行黏度測㈣的15(rc〜·。c下的黏度^ 的疋10Pa*S〜1000 Pa.s,特別好的是50Pa.s〜500 pa · S士此^4於150C〜2〇〇。〇下的黏度小於上述下限值之情 1了 ’ Γ在於晶片裝載後的製程,即線結合或者樹脂密封的The composition of the present invention can be obtained by a known method, for example, using a mixer, a roll, or the like, mixing the components (a), (c), and (D), and mixing (8) and the above-mentioned silky component in the case of use. The mixing sequence, time, temperature, pressure and other conditions can be controlled as needed. It is preferred to remove volatile components from the respective components under reduced pressure, typically less than about 1 mmHg, preferably less than or equal to 5 mmHg, prior to the above mixing. Under the repeated force, for (A), (B ° at temperature 12 (TC~17 (TC, preferably just under the condition of c~16()t: 4], when ~8 hours left ^, (C) The particulate thermoplastic resin is allowed to stand at 80 C 120 C for 20 hours to 3 hours, whereby the amount of reduction can be made less than or equal to a predetermined amount in the TGA measurement described later. The material is loaded into the aiuminiumcen, and the empty aluminum crucible is used as the reference sample. The temperature is increased from 25C to 3〇0°C in the air by 1〇 at $/min. At least one heat peak value is observed on the lower temperature side of the (A)% oxygen resin hardening peak. The far heat peak, for example, as shown in Fig. 1, is compared with the total heat of the (A) epoxy resin. Small. During the fever reaction, pass the 25 200813152 -----factory. V. ...v.. :. ... .. - ..- ' . Microscopic observation 5 see (thermal plasticity) The resin particles are plasticized and swollen, = semi-mixed phase such as adult (A) epoxy resin, and the composition becomes a B-stage state. Preferably, the peak temperature of the heat generation peak on the low temperature side (T1) ) Generous, equal to 8 〇 C ' is preferably greater than or equal to 9 〇. 〇, and harder heat -, the temperature (T2) is 70 ° C ~ 1 HTC or above 1HTC, preferably 8 〇 ° ° ° ° ° 100°c or loot: or more. In this way, (C) thermoplastic resin particles are mixed with epoxy resin (A) from room temperature (25. 〇 until the initiation of the exothermic reaction), so the composition The a-stage stability is improved. The 'low-temperature side exothermic reaction is a phase change-based reaction, and is not based on a chemical reaction such as a hardening reaction, and is independent of the hardening reaction of the epoxy resin, so that the B-stage stability can be obtained. Preferably, the composition of the present invention is placed in an aluminum crucible, and the empty sample is used as a reference sample, and the temperature is n1 in the air (the speed of rc/min is raised from 25° ί to 3〇〇t: one side In the TGA measurement, the Berry to 20 ° C is reduced to 1%. The best is less than or equal to 〇. The mass loss is mainly due to the volatilization of the volatile components of the silk scarf. As the volatile component, for example, List: epoxy resin, epoxy resin hardener, hot fat particles The low molecular weight component, the solvent used in the synthesis of the other components of the reduced object, etc. The mass reduction amount described above can be used to decompress the components of the epoxy lion group as described above. ==Divided by this. Thereby, the process of sealing the V-junction resin after wafer loading (4) accounts for the high temperature of the crystallizing agent, and 歹"50C~2GGC^When the temperature can reduce the volatile component in the bonding agent 26 200813152 f = = the possibility of voids, can be a certain degree of hardening in the line bonding process or the month of the seal of the tree, can shorten the process time Γ, in the air - face 1 (rc / The speed of minutes is from 25.匸 进行 进行 进行 四 四 四 rc rc rc rc rc rc rc rc Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa Pa 〇. The viscosity of the underarm is less than the above lower limit. 'The trick is the process after wafer loading, that is, wire bonding or resin sealing.
月自衣載位置移動的可能。並且,於15(TC〜2〇(TP Γ=度ΐ:上述上限值之情形時,存在晶片裝載中組成 物^更,產生結合不足等的可能。藉由將黏度調整為上= =又耗_ ’可提供即使於線連接製‘料者樹 : 中進行硬化,亦無空隙的硬化物。 衣秩 ,本發明之組成物Β階化的條件,可根據該組成 物的、,且成或者用途進行適宜調整,較理想的是溫度為丁, 〜Τ2的乾圍内,特別是考慮到Β階狀態下的穩定性 ΐΓΓ:(Τ2—20°c)的範圍内。時間可對應溫度進行 进擇。即’於T!〜T2的範圍内,選擇更低溫侧的溫声之 情形時則設為更長時間,選擇高溫側的溫度 ^ 更短時間。此處,於低溫且短時間之情形時,存在6 = 無法充分進行,特別於黏晶材料用途中產生 者晶粒位移等問題的可能。並且,於高溫且長時二; 時:存在-部相紅階化,朗鄕晶材料The possibility of moving from the clothing position in the month. Further, in the case of 15 (TC 〜 2 〇 (TP Γ = degree ΐ: the above upper limit value, there is a possibility that the composition is insufficient during wafer loading, and the bonding is insufficient. By adjusting the viscosity to upper == The consumption _ ' can provide a hardened material which is hardened even in the wire connection system, and has no voids. The condition of the composition of the present invention can be determined according to the composition of the composition. Or the use is suitable for adjustment, and it is desirable that the temperature is in the dry circumference of 丁, Τ2, especially considering the stability Β in the Β-stage state: (Τ2-20°c). The time can be corresponding to the temperature. Selecting. That is, in the range of T!~T2, when the temperature of the lower temperature side is selected, it is set to a longer time, and the temperature of the high temperature side is selected to be shorter. Here, at a low temperature and for a short time In the case of the situation, there is a possibility that 6 = cannot be fully carried out, especially in the case of the crystal grain displacement in the use of the viscous material. Moreover, at the high temperature and the long time two; when: the presence of the red phase of the red phase, the stellite material
黏著不足等問題的可能。 I 200813152 晶片裝載條件’亦可括4走 適宜調整。主要的條件有组成或者用途加以 溫度、時間,晶片裝载時曰:以::的預熱(preheat) 力。預熱的目称除去;:巧的溫度、時間、塵 g , . , , '、 土板以及黏晶劑的水分、敕仆斑 :二ΐ提高晶片與黏晶材料的黏著性。胁 :預“财為50C〜l50t,時間為1〇秒〜、鐘:: ;;25°C^250t C度為25C〜200。。,時間為 〜1〇 為 〇.〇1 MPa〜10 MPa。 刀 導歸^明之組成物尤其可適用於半導體用黏晶劑中。半 师Γ並無特別限定’可適用於大型晶片或者晶 片和層寻要求進行鱗確並且高效的安裝的用途中。 [實施例] 明 以下列舉實施例以及比較例,對本發明進一步加以說 但本發明亚不受這些實施例的限定。 一施例 1 二.η^例卜4 '曰將表!以及表2所示之量的各成分,使用坑的行星 器Μ""0混合,使之通過坑的三輥機 ^ ’於25 c下以灯生混合器進行混合,製備各實施例、來 考例、比較例的組成物。另夕卜,於表i以及表2中,㈣ 表示下述各成分,數字表示質量份。 (A)壞氧樹脂 %氧樹月日a(雙I分人型_氧樹脂,環氧當量18Q,RE3⑽ (商品名)’日本化樂股份有限公司梦迭) 200813152 石夕酮改性環氧樹脂m (合成例1 ) 矽酮改性環氧樹脂〇 (合成例3) (B )硬化劑 硬化劑b (苯酚酚醛清漆,環氧當量110,LD92 (商 品名),明和化成股份有限公司製造) >5夕酮改性硬化劑η (合成例2 ) ‘ (C)粒子狀熱可塑性樹脂 粒子狀熱可塑性樹脂e (處理例1) β 粒子狀熱可塑性樹脂€(處理例2) 粒子狀熱可塑性樹脂g (處理例3) 粒子狀熱可塑性樹脂h (處理例4) 粒子狀熱可塑性樹脂i (處理例5) 粒子狀熱可塑性樹脂j (處理例6) 粒子狀熱可塑性樹脂k (處理例7) 粒子狀熱可塑性樹脂1(聚曱基丙烯酸曱醋製,數量 平均分子量500,000,重量平均分子量1,500,000,平均粒 ⑩ 徑1 μηι,最大粒徑3 μιη) (D)硬化促進劑 '硬化促進劑c (四苯基膦-四苯基硼酸酯,ΤΡΡ-Κ (商 - 品名),北興化學股份有限公司製造), 硬化促進劑d (三苯基膦,ΤΡΡ,北興化學股份有限公 司製造), 無機填充劑 二氧化矽(球狀熔融二氧化矽,平均粒徑〇·8 μηι,最 29 200813152 大粒徑3 μπι,SE2030 (商品名),Adomatex股份有限公司 製造), 碳黑(Denka Black (商品名),電氣化學工業股份有 限公司製造), 矽烷偶合劑(KBM-403 (商品名),信越化學工業股 份有限公司製造)。The possibility of problems such as insufficient adhesion. I 200813152 Wafer loading conditions' can also be adjusted appropriately. The main conditions are composition or use for temperature, time, and wafer loading: preheating force with::. The purpose of preheating is removed;: the temperature, time, dust g, . , , ', soil and the moisture of the adhesive, 敕 斑 : : : : : : : : : 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Threat: Pre-"Cai" is 50C~l50t, time is 1〇~, clock::;; 25°C^250t C degree is 25C~200., time is ~1〇 is 〇.〇1 MPa~10 MPa The composition of the knife guide is particularly applicable to the adhesive for semiconductors. The semi-master is not particularly limited to the application of large wafers or wafers and layers for accurate and efficient installation. EXAMPLES Hereinafter, the present invention will be further described by way of examples and comparative examples, but the present invention is not limited by these examples. One embodiment 1 II. η^examples 4 '曰 Tables and Table 2 The amount of each component, using the pit planetary Μ "" 0 mixing, through the pit three-roller ^ ' at 25 c with a lamp mixer to prepare each example, to test, compare In addition, in Tables i and 2, (4) indicates the following components, and the numbers indicate the parts by mass. (A) Ozone resin % oxygen tree month a (double I type _ oxy resin) , epoxy equivalent 18Q, RE3 (10) (trade name) 'Japan Chemical Music Co., Ltd. Dream Diesel' 200813152 Resin m (Synthesis Example 1) Anthrone-modified epoxy resin oxime (Synthesis Example 3) (B) Hardener curing agent b (phenol novolac, epoxy equivalent 110, LD92 (trade name), manufactured by Minghe Chemical Co., Ltd. >5-ketone-modified hardener η (Synthesis Example 2) ' (C) particulate thermoplastic resin particulate thermoplastic resin e (Processing Example 1) β-particle-shaped thermoplastic resin (Processing Example 2) Particle form Thermoplastic resin g (Processing Example 3) Particulate thermoplastic resin h (Processing Example 4) Particulate thermoplastic resin i (Processing Example 5) Particulate thermoplastic resin j (Processing Example 6) Particulate thermoplastic resin k (Treatment) Example 7) Particulate thermoplastic resin 1 (polyacrylic acid vinegar vinegar, number average molecular weight 500,000, weight average molecular weight 1,500,000, average particle size 10 diameter 1 μηι, maximum particle size 3 μιη) (D) hardening accelerator' Hardening accelerator c (tetraphenylphosphine-tetraphenyl borate, ΤΡΡ-Κ (commercial-name), manufactured by Beixing Chemical Co., Ltd.), hardening accelerator d (triphenylphosphine, ruthenium, Beixing Chemical Co., Ltd. Made by the company), inorganic filler cerium oxide (Spherical molten cerium oxide, average particle size 〇·8 μηι, most 29 200813152 large particle size 3 μπι, SE2030 (trade name), manufactured by Adomatex Co., Ltd.), carbon black (Denka Black (trade name), electrical chemistry Industrial Co., Ltd.), decane coupling agent (KBM-403 (trade name), manufactured by Shin-Etsu Chemical Co., Ltd.).
矽酮改性樹脂的合成 (合成例1) 於安裝有攪拌葉片(stirring blade )、滴液漏斗 (dropping funnel)、溫度計、酯應接器(esteradapter)及 回流管的燒瓶中,添加42.0 g( 〇.1〇莫耳)的式(12)之 環氧樹脂與168.G g的f苯,於13()ΐ/2小時的條件下進行 共沸脫水。接著將其冷卻至⑽。c,滴入〇 5 g的觸媒(作 越化學製造之CAT孔_5QT),立即以3()分鐘左右滴入^ t 0.05莫耳、的式(15)之有機聚⑪賊與⑷的甲 苯的混合物,進一步於〗⑽。Γ/ 士 ,^ 、 〇C/6小~的條件下使之熟成。 自”中除去甲本,後得黃色透體 環氧當量 400,有機、η Dra S/Z:)L, 來夕氣义元含置為46 4會署价脸甘 記為矽酮改性環氣樹脂111。 . 里)將其 (合成例2) 回流管白㈣中,:Γ 漏斗、溫度計、酯應 共沸脫水。接著將; == 主100 c,滴入0.5 g的觸 200813152 越化學製造之CAT-PL-5〇T),立即以3〇分 g (0.05莫耳)的式(15)之有機聚矽酮烷鱼甲3 苯的混合物,進—步於1〇(rc/6小時 之#甲 自其中除去f苯’獲得褐 下使之4成。 苯驗當量340 ,有機聚石夕产人旦:(η~20 Pa · s/25t:, 為矽酮改性硬化劑η。 兀,里4·1重量份)。將其記 (合成例3) 於安裝有攪拌葉月、滴 回流管的燒瓶中,添加㈣u 、酯應接器及 環氧樹脂與275.2 g的甲|,、 ·幻旲耳)的式(14)之 共彿脫水。接著將其冷卻’ /2小時的條件下進行 越化學製造製cai^pl_5()t、 c,滴入〇·5§的觸媒(信 g (0.014莫耳)的式 ,立即以30分鐘左右滴入31·2 甲苯的混合物,進之有機聚矽酮烷與124.8 g的 成。自其中除去甲笨小時的條件下使之熟 290,有機聚矽氧烷含丄^得白色不透明固體(環氧當量 性環氣樹脂〇。 3里丨·2重量份)。將其記為低矽酮改 [化 17]Synthesis of an anthrone-modified resin (Synthesis Example 1) 42.0 g (42.0 g) was added to a flask equipped with a stirring blade, a dropping funnel, a thermometer, an ester adapter, and a reflux tube. The epoxy resin of the formula (12) and the benzene of 168.G g were subjected to azeotropic dehydration under conditions of 13 () ΐ / 2 hours. It is then cooled to (10). c, drip 〇 5 g of the catalyst (made as CAT hole _5QT made by chemistry), immediately drip about 3 () minutes into the organic poly 11 thief of formula (15) and (4) A mixture of toluene, further in (10). Γ / 士 , ^ , 〇 C / 6 small ~ under the conditions to make it mature. After removing the A, the yellow translucent epoxy equivalent of 400, organic, η Dra S/Z:) L, and the yoke yoke contained 46 4, the price of the face is marked as an oxime modified ring Gas resin 111.)) (Recombination Example 2) In the reflux tube white (four),: Γ funnel, thermometer, ester should be azeotropically dehydrated. Then; == main 100 c, drip 0.5 g of touch 200813152 Yue Chemical Manufactured CAT-PL-5〇T), immediately with a mixture of 3 gg (0.05 mol) of the organopolyfluorenone fish 3 benzene of formula (15), stepped into 1 〇 (rc/6 The hour ##A removes the f-benzene from it and obtains 4% of the brown. The benzene is equivalent to 340, and the organic polylith is produced by human: η~20 Pa · s/25t:, is an anthrone modified hardener η兀, 41·1 parts by weight). Record it (Synthesis Example 3) in a flask equipped with a stirring leaf and a drop-return tube, and add (iv) u, an ester adapter and epoxy resin to 275.2 g of A| , ············································································· (letter g (0.014 m)), immediately A mixture of 31·2 toluene was added dropwise in about 30 minutes, and the organic polyfluorenone was introduced into a mixture of 124.8 g. The occluded product was subjected to 290, and the organic polyoxane contained white opaque. Solid (epoxy equivalent ring gas resin 〇. 3 丨 · 2 parts by weight). Record it as low oxime ketone [Chemistry 17]
31 20081315231 200813152
3 [化 19]3 [Chem. 19]
Q 〇 H2VC_Q 〇 H2VC_
吧1 ——( 、0* (14) 其中,n/m= 1/19,n + m的平均值為5 [化 20] CH3 I H-Si-0 I CH3 ch3 I 3 Si-0 I CH3 H H-l H c—si丨c 5 [化 21] ch3 I H-Si-0 CH, 6 3 I 3 H1-H c—s'—c 8 5 Η 3 » 3 h.lh c—*s—c 6) 粒子狀熱可塑性樹脂的處理 (處理例1) 於安裝有攪拌葉片、滴液漏斗、溫度計、回流管的燒 瓶中,添加100 g的粒子狀熱可塑性樹脂(聚曱基丙烯酸 曱酯製,數量平均分子量500,000,重量平均分子量 32 200813152 1,500,000,平均粒徑丨μηι,最大粒徑3 μιη)與9〇〇 g的水, 於25°C下充分攪拌直至整體成為均勻的漿狀。於另外安裝 有攪拌葉片、滴液漏斗、溫度計、回流管的燒瓶中添加1〇〇 g的水,——面攪拌一面以1〇分鐘左右滴入2 g的矽烷偶合 劑(γ-曱基丙烯醯氧基丙基三曱氧基矽烷),進一步於 25°C/2小時的條件下使之熟成。以3〇分鐘左右將該矽烷 偶合劑水溶液滴入至粒子狀熱可塑性樹脂/水之漿料中,進 =步於25。(:/12小時的條件下使之熟成。自其中除去水, k得白色粉末。將其記為粒子狀熱可塑性樹脂㊁。 (處理例2) 於安裝錢拌葉片、滴液漏斗、溫度計、回流管的燒 ;"泰加§的粒子狀熱可塑性樹脂(聚曱基丙烯酸 -日衣,數罝平均分子量500,0⑻,重量平均分 七5:::二1 ’,最大粒徑3 μη〇與900 g的水, 有攪拌葉片、滴液漏斗、巧”=水狀。表另外女裝 ㈣水,-面攪拌-面以的驗中添加_ 劑(γ-縮水甘油氧基丙基三甲氧滴入2g的石夕垸偶合 小時的條件下使之熟細於Γ/2 π⑽小時的條件下使^旨。1之/料中’進步於 色心末。將其記為粒子狀熱可塑性樹脂f。 (處理例3) 於安裳有勝葉片、滴液漏斗、溫度計、回流管的燒 200813152 瓶中’添加100 g的粒子狀熱可塑性樹脂(聚曱基丙稀酸 謂,數量平均分子量500,_,重量平均分子量 1,500:000’平均粒後i陣,最大粒經3阿)與9〇〇 g的水,Bar 1 ——( , 0* (14) where n/m= 1/19, the average value of n + m is 5 [20] CH3 I H-Si-0 I CH3 ch3 I 3 Si-0 I CH3 H Hl H c—si丨c 5 [Chem. 21] ch3 I H-Si-0 CH, 6 3 I 3 H1-H c—s'—c 8 5 Η 3 » 3 h.lh c—*s—c 6) Treatment of particulate thermoplastic resin (Processing Example 1) 100 g of a particulate thermoplastic resin (polydecyl acrylate) was added to a flask equipped with a stirring blade, a dropping funnel, a thermometer, and a reflux tube. The number average molecular weight of 500,000, the weight average molecular weight of 32 200813152 1,500,000, the average particle diameter of 丨μηι, the maximum particle diameter of 3 μηη) and 9 〇〇g of water were sufficiently stirred at 25 ° C until the whole became a uniform slurry. Add 1 μg of water to a flask equipped with a stirring blade, a dropping funnel, a thermometer, and a reflux tube, and add 2 g of a decane coupling agent (γ-mercaptopropene) to the surface while stirring for 1 minute. Methoxypropyltrimethoxydecane) was further matured at 25 ° C for 2 hours. The aqueous solution of the decane coupling agent was dropped into the slurry of the particulate thermoplastic resin/water in about 3 minutes, and the step was carried out at 25. (:/12 hours under conditions to make it mature. From which water is removed, k is a white powder. It is referred to as a particulate thermoplastic resin 2. (Processing Example 2) Installing a money mixing blade, a dropping funnel, a thermometer, The reflux tube is burnt; "Taijia § particulate thermoplastic resin (polyacrylic acid-day coat, number average molecular weight 500,0 (8), weight average of seven 5::: two 1 ', maximum particle size 3 μη 〇 with 900 g of water, there are mixing blades, dropping funnel, clever" = water. Table also women's (four) water, - surface mixing - surface with the addition of _ agent (γ-glycidoxypropyl three Oxygen was added dropwise to 2 g of the scorpion scorpion for a few hours, and the mixture was cooked to a fineness of Γ/2 π(10) hours. The material of the material was progressed to the end of the color. It was recorded as particulate thermoplasticity. Resin f. (Processing Example 3) Adding 100 g of particulate thermoplastic resin (polymercaptopropionic acid, number average molecular weight) in a 200813152 bottle of Anshang's winning blade, dropping funnel, thermometer, and return tube 500, _, weight average molecular weight 1,500:000 'average grain after i array, maximum grain size 3 A) and 9 〇〇 g of water,
於坑I充分搜拌直至整體成為均勻的漿狀。於另外安裝 有擾拌葉>1 :滴液漏斗、溫度計、回流管的燒瓶中添加1〇〇 g水#面攪拌一面以1〇分鐘左右滴入2 g的矽烷偶合劑 士N-笨基胺基丙基三曱氡基矽烷),進一步於乃。以2小 2條件下使之熟成。以3G分鐘左右㈣雜偶合劑水溶 二二至粒子狀熱可塑性樹脂/水之漿料中,進-步於 二2小時的條件下使之熟成。自其中除去水,獲得白 七末。將其記為粒子狀熱可塑 (處理例4) 瓶中Ϊ 液漏斗、溫度計、回流管的燒 甲I旨製數子子^細糊脂(麵丙稀酸 於坑下充‘二粒經3 μπ〇與_ g的水, H 見 正月豆成為均勻的漿狀。於另外安裴 使秦二分=右以 獲得白色粉末。將其記為粒子狀:ί::除去水’ 34 200813152 (處理例5) 於女衣有攪拌葉片、滴液漏斗、溫度計、回流管的焊 瓶中,添加1〇〇 g的粒子狀熱可塑性樹脂(包含丁二歸ς 膠之内核部、部分交聯的聚甲基㊉烯酸曱§旨之外皮部的芯/ 殼結構,平均粒徑i网,最大㈣3 _)與_ g的水, 於ϋ了充分攪拌直至整體成為均勻的漿狀。於另外安農 有擾拌葉>1、滴液漏斗、溫度計、回流管的燒瓶中添加_ g的水,一面授掉一面以10分鐘左右滴入2 g的石夕烷偶人 二(广曱,丙_氧基丙基三甲氧基魏),進一步於 二的條件下使之熟成。以30分鐘左右將該矽烷 一三錢滴人至粒子狀射紐獅/水之㈣中,進 /J、時的條件下使之熟成。自其中除去水, 又行;Ά °將其記練子狀熱可塑性樹脂i。 (處理例6) 渐中於有攪拌葉片、滴液漏斗、溫度計、回流管的燒 數量平^的粒子狀熱可塑性樹脂(聚苯乙烯製, 粒徑1 _刀,/大!^f0 ’重量平均分子量3〇〇,_,平均 八俨拌吉石*取通杈3 μηι)與90〇g的水,於25°c下充 -面攪拌-:二? 流管的燒瓶中添加100§的水, 乙稀基三甲氧鐘左右滴入2§的魏偶合劑(對苯 之孰成。以30 ),進一步於25。口2小時的條件下使 水之漿料中,進—步於25。⑽小時的條 35 200813152 f中除去水’獲得白色粉末。將其記為 件下使之熟成 粒子狀熱可塑 (處理例7) 於安裝有攪拌葉 、 瓶中,添加1〇〇 # 滴液漏斗、溫度計、回流管的燒In the pit I fully search until the whole becomes a uniform slurry. Add 1 〇〇g of water to the flask equipped with the mixing blade >1: a dropping funnel, a thermometer, and a reflux tube, and add 2 g of decane coupling agent N-stupyl in about 1 minute. Aminopropyltridecyldecane), further. It is made into 2 small 2 conditions. In about 3G minutes (4) the hetero-coupled agent is dissolved in water to a slurry of particulate thermoplastic resin/water, and it is further matured under the conditions of two hours. Remove water from it and get the end of the white seven. This is referred to as particle-shaped thermoplastic (Processing Example 4). The sputum funnel, thermometer, and reflux tube of the bottle are used to make a number of micro-butter pastes (the surface of acrylic acid is filled under the pit). 〇π〇 and _ g of water, H see the positive moon bean becomes a uniform slurry. In addition to the ampoule, let the two points of the right = right to obtain a white powder. Record it as a particle: ί:: remove water ' 34 200813152 (Processing example 5) Add 1 〇〇g of particulate thermoplastic resin to the welding bottle with stirring blade, dropping funnel, thermometer and return tube in the women's clothing (including the core part of the butyl ginseng gel, partially crosslinked poly for armor) The core/shell structure of the outer skin of the decyl decenoate § is the average particle size i net, the maximum (four) 3 _) and the water of _ g are fully stirred until the whole becomes a uniform slurry. Add _ g of water to the flask of the mixing leaf >, the dropping funnel, the thermometer, and the reflux tube, and add 2 g of the diarrhea to the person 2 (the 曱, _ _ oxygen) Propyl trimethoxy-Wei), further matured under the conditions of two. The decane-three-dollar drop to the grain in about 30 minutes In the New Lion/Water (4), it is matured under the conditions of J/J. From which water is removed, and again; Ά ° It is recorded as a thermoplastic resin i. (Processing Example 6) A particulate thermoplastic resin with a stirring blade, a dropping funnel, a thermometer, and a reflux tube (polystyrene, particle size 1 _ knife, / large! ^f0 'weight average molecular weight 3 〇〇, _ , the average gossip mix jade stone * take 杈 3 μηι) with 90 〇 g of water, fill and stir at 25 ° C -: two? flow tube of the flask to add 100 § water, ethylene trimethoxy Add 2 § of the Wei coupler to the left and right of the clock (for benzene to 30.), and further into the slurry of water at 25 ° for 2 hours, proceed to 25. (10) hours of strip 35 200813152 The water was removed from f' to obtain a white powder. It was recorded as a piece to make it into a pellet-like thermoplastic (Process Example 7). In the case where a stirring blade and a bottle were installed, a 1 〇〇 # dropping funnel, a thermometer, and a reflux tube were added. burn
甲醋製,數量平均八狀熱可雜翻(聚甲基丙烯酸 平均粒徑1 jum,二^_3,咖’重量平均分子量9,000, 下充分獅直至敕Mm)與9GG g的水,於25t: 葉片、滴液漏斗Γ 3,勻的漿狀。於另外安裝有獅 水’-面-面以:二 甲基丙婦醯氧基兩基气:=2g的矽烷偶合劑(γ-時的條件下使之孰一、甲虱基矽烷),進一步於25°C/2小 液滴入至粒子狀;分鐘左右將該魏偶合劑水溶 抑則、時性樹脂/水之浆料中,進一步於 色粉末。將其記為粒子狀熱可塑性樹= # 4:如::法對各組成物進行試驗。結果示於表3以及 ^广=些表巾,「ND」表示未檢測出,「NA」表示 反應進行職,無法黏著晶片故而 試驗方法 (a) —使用DSC (不差掃描熱析儀/mettler製造),取各 環氧樹脂組錢.約U)mg裝入故_巾,心的銘_ ^照試料,於空氣巾以1(rt/分鐘的升溫速度自坑升 孟至300°C,進行測定。 200813152 對¥乳树脂組成物,測定其於後 2 下放置預定聘間後的黏度。 度及方、乃匕 (C) 定性 對以較T1高2Gt的温度(味例丨〜4為贿)加 ,環氧樹脂組成物1Q分鐘使之B階化後,以及bMade of vinegar, the average number of octagonal heat can be turned over (poly methacrylic acid average particle size 1 jum, 2 ^ 3, coffee 'weight average molecular weight 9,000, full lion until 敕 Mm) and 9GG g water, at 25t: Blade, drip funnel Γ 3, evenly slurry. In addition, the lion water '-face-face is additionally installed: dimethyl acetonyloxy two base gas: = 2g of decane coupling agent (in the case of γ-, 虱 、, 虱 虱 矽 )), further The droplets were poured into a pellet at 25 ° C / 2; the Wei coupling agent was dissolved in water, and the slurry of the resin/water was further mixed to a color powder. It is referred to as a particulate thermoplastic tree = #4: For example, the method is used to test each composition. The results are shown in Table 3 and ^广= some of the towels, "ND" means not detected, "NA" means that the reaction is carried out, the wafer cannot be attached, and the test method (a) - using DSC (not bad scanning pyrostat / mettler) Manufacture), take the epoxy resin group. About U)mg into the original _ towel, the heart of the _ ^ according to the sample, in the air towel at 1 (rt / minute heating rate from the pit to Meng ° 300 ° C, 200813152 For the composition of the milk resin, measure the viscosity after placing the predetermined hiring in the last 2 times. Degree and square, 匕 (C) Qualitative pair is 2Gt higher than T1 (Taste Example 丨~4 Bribe), epoxy resin composition 1Q minutes to make it B-stage, and b
二25Λ下放置表中所示之預定時間後的環氧樹脂 、、且’叫(a)相同的方法進行DSC測定,將β階化 後測定的C階化的峰值㈣作為減值出預 間後的C階化的峰值面積相對於該初難的比例 (d)逼片裝載 士圖2所示般‘作试驗片,對各試驗片進行觀 測’算出含有空隙的試驗片數/總試驗片數(20個)。試驗 片的製作方法如下所述。 於表面上塗布有阻焊劑(s〇· mask) (3〇 _厚)的 BT 基板(200 μιη 厚,35 πίττας x u , 、 Dmmx35mm)上塗布環氧樹脂組 成物(50 μηι 厚,12 rrmixio 、 ^ / m l2mm)。以較T1高20°C的溫度 、比車乂例3 6為120 C )對它加熱1〇分鐘使之B階化, 以150C/1 MPa/Ι秒裝载形成有氮化石夕膜的石夕晶片(谓 μηι 厚,12.5mmx12.5mm),製成試驗片。 (e) B階後的空| =衣作圖2的试驗片日寺,將於B階化後,晶片裝載前 之所得物’於25 C下放置各表所示的預定時間後,以與⑷ 相同的方法裝載晶片,進行SAT觀測,算出含有空隙的試 37 200813152 1 驗片數/總試驗片數(20個)。 (f)是1裝載後的溢出 觀測2(M固於⑷巾製作的試驗片的溢出寬度的最大 ^。所謂溢出(fillet),是指由於流動而自晶片旁滲出的樹 圖3)。若溢出寬度較大則至基板上的線連接端子的距 離义^,因此要求其寬度小於等於10〇μιη。大於10〇 則不合格,异出不合格的試驗片數/總試驗片數(20個)。 • (g) 的溢出 於2=製作圖2的試驗片時,於B階化後,晶片裝載前, 方法LC杳下放置各表所示的預定時間後,以與⑴相同的 算出衣人日日片,以與(f)相同的方法測定它的溢出寬度, 外不合格的試驗片數/總試驗片數(20個)。The epoxy resin after a predetermined time shown in the table is placed under the second 25 Λ, and the same method as in (a) is used for DSC measurement, and the peak value of the C-stage (four) measured after the β-stage is used as the pre-existing value. The ratio of the peak area of the subsequent C-stage to the initial difficulty (d) is as shown in Fig. 2 as a test piece, and observation of each test piece is performed to calculate the number of test pieces containing voids/total test The number of pieces (20). The test piece was produced as follows. Applying an epoxy resin composition (50 μηι thick, 12 rrmixio, ^) on a BT substrate (200 μm thick, 35 πίττας xu, Dmmx35 mm) coated with a solder resist (3 〇 _ thick) on the surface / m l2mm). It is heated to a temperature of 20 ° C higher than T1, and is heated to a B-stage by heating for 1 〇 minutes, and the stone formed with a nitride film is loaded at 150 C/1 MPa/Ι second. A wafer (called μηι thick, 12.5 mm x 12.5 mm) was prepared into a test piece. (e) After the B-th order | = clothing as the test piece of the Figure 2, after the B-stage, the product before the wafer loading 'after 25 ° placed the table for the predetermined time, The wafer was loaded in the same manner as in (4), and SAT observation was performed to calculate the number of test pieces including the voids 37 200813152 1 / the total number of test pieces (20 pieces). (f) is the overflow after 1 loading. Observation 2 (M is the maximum of the overflow width of the test piece produced by the (4) towel. The so-called fillet refers to the tree oozing out from the wafer due to the flow. If the overflow width is large, the distance to the wire connection terminal on the substrate is such that the width is required to be less than or equal to 10 〇 μιη. If the number is more than 10 〇, the number of test pieces is unqualified, and the number of test pieces (20 pieces) is unqualified. • (g) overflows in 2 = when the test piece of Fig. 2 is produced, after the B-stage, before the wafer is loaded, the method LC places the predetermined time shown in each table, and then calculates the same wearer day as (1). In the Japanese film, the overflow width of the film was measured in the same manner as (f), and the number of test pieces per unacceptable test piece/the total number of test pieces (20 pieces).
38 20081315238 200813152
j!clk613 〔!<〕 實施例11 a 34.6 η 65.4 Ο ' -s 163.5 一 m r—4 實施例10 a 34.6 η 65.4 Ο ο) m 106.5 r 1 < wo 實施例9 a 34,6 η 65.4 ◦ 一 S 123.5 r—Η in 實施例8 a/o 50.3/13.7 b 36.0 Ο < 123.5 ι 1 f IT) * 實施例7 m 78.4 b 21.6 Ο -S 123.5 — to 實施例6 a 34.6 η 65.4 ο 一 123.5 實施例5 a 34.6 η 65.4 Ο •- S 123.5 1—ί in 實施例4 a 34.6 I η ! 65.4 ο — ^ S 123.5 贅1· I f ^T) 實施例3 a 34.6 η 65.4 Ο ^ S 123.5 r—* 實施例2 a 34.6 η 65.4 ο ^ -S 123.5 r—H tn 實施例1 a 34.6 η 65.4 ο — -S 123.5 vn (A)環氧樹脂 (Β)硬化劑 (D)硬化促進劑 (c)熱可塑性樹脂粒子 二氧化矽 碳黑 KBM-403 200813152 [表2]j!clk613 〔! <] Example 11 a 34.6 η 65.4 Ο ' -s 163.5 a mr-4 Example 10 a 34.6 η 65.4 Ο ο) m 106.5 r 1 < wo Example 9 a 34,6 η 65.4 ◦ a S 123.5 r —Η in Example 8 a/o 50.3/13.7 b 36.0 Ο < 123.5 ι 1 f IT) * Example 7 m 78.4 b 21.6 Ο -S 123.5 - to Example 6 a 34.6 η 65.4 ο a 123.5 Example 5 a 34.6 η 65.4 Ο •- S 123.5 1—ί in Example 4 a 34.6 I η ! 65.4 ο — ^ S 123.5 赘1· I f ^T) Example 3 a 34.6 η 65.4 Ο ^ S 123.5 r—* Implementation Example 2 a 34.6 η 65.4 ο ^ -S 123.5 r—H tn Example 1 a 34.6 η 65.4 ο — -S 123.5 vn (A) Epoxy Resin (Β) Hardener (D) Hardening Accelerator (c) Thermoplasticity Resin particle cerium oxide carbon black KBM-403 200813152 [Table 2]
參考例1 比較例1 比較例2 比較例3 比較例4 (A)環氧樹脂 a a m a m 34.6 34.6 78.4 34.6 78.4 (B)硬化劑 η 65.4 η b n b 65.4 21.6 65.4 21.6 (D)硬化促進劑 c 1 c 1 c 1 d 1 d 1 (C)熱可塑性樹脂粒子 k 20 0 0 0 0 二氧化矽 123.5 123.5 123.5 123.5 123.5 碳黑 1 1 1 1 1 KBM-403 1.5 1.5 1.5 1.5 1.5 40 200813152Reference Example 1 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 (A) Epoxy resin aamam 34.6 34.6 78.4 34.6 78.4 (B) Hardener η 65.4 η bnb 65.4 21.6 65.4 21.6 (D) Hardening accelerator c 1 c 1 c 1 d 1 d 1 (C) Thermoplastic resin particles k 20 0 0 0 0 Ceria 123.5 123.5 123.5 123.5 123.5 Carbon black 1 1 1 1 1 KBM-403 1.5 1.5 1.5 1.5 1.5 40 200813152
【e<〕 實施例11 rn On s r * g r··, 00 T—i r—< : <N m Os On Μη 00 On oo σί rn Os 20/20 20/20 20/20 20/20 丨 20/20 ο δ Ο ο (Ν δ ο CN δ ο Γ<| δ 實施例10 S ES r—< 1—< 〇 ! * ^"' * 1—< S S 00 vd G\ rn ON \o 〇 δ o o ο Ci δ ο CJ ο ο CN Ο 19/20 17/20 15/20 14/20 14/20 實施例9 寸 * f τ—η 〇\ oo 5 r—s s s S y—> <N m vd Os ^T) On OO 家 o CN δ o CN o Ο CN ο S ο (Ν ΓΠ ο CN Ο ο ο Qj ο ο CN Ο ο CN δ 實施例8 s s CN| > < r < s s g r—< Os s; αί rn αί ON 〇\ o (N 〇 o o ο δ ο ο Ο (Ν δ ο (Ν Ο ο § ο δ ο CN Ο ο δ 實施例7 s s <N r * s 1—« s 1 t o Ϊ—* τ-H 00 a\ 00 卜: ON wo ON (N o CN δ o Q o ο CN δ ο § ο CN ο ο CN Ο ο CJ ο ο (Ν δ ο Ci ο ο ο 實施例6 s t—i ON OO t—I 〇 r—H s t i , <1 g r—H 卜 vd ON \〇 Os ir> ON Os o CN o o CN o ο 04 Ο ο (Ν ο Ci ο ο <Ν Ο ο rg ο δ ο CN Ο ο δ 實施例5 Os (N On ί· < 〇 s g l> y « r—< (N 〇i (N v〇 Os VO On 00 Os δ o (N o Ο ο Ο CN Ο ο Ci ο ο CN Ο ο CS ο CJ δ ο (Ν Ο ο δ 實施例4 oo r—H S r_H s r—^ g OO T—< O) ON … ON OO vd 0's 卜 \D ON o o o CN o ο ο ο (Ν Ο ο (Ν δ ο CN Ο Ο CN Ο ο 04 Ο ο ο ο δ 實施例3 ON G\ 2 s y—* S T 4 0 i—H 1 t r—^ τ—H 卜 \D On 寸 in On m ON CN On o cs δ o o ο <Ν Ο Ο ο CJ ο ο CN Ο ο C! Ο (Ν Ο ο ο ο CN δ 實施例2 o r-H r—« s r—1 s 〇 1 < r—* CN Os ON ON 卜 0's in … ON o CN o o CN ο δ Ο ο ο ο ο (Ν Ο ο (Ν Ο ο 04 ο ο CN Ο ο (Ν δ 實施例1 oo ON I· < r—' » s r—· g (N r—< r—I1 寸 s; Os v〇 On τ—H VD Os o CN o o o Ο i (Ν Ο ο ο ο § ο (Ν Ο 04 ο ο Q ο ο (Ν δ δ 1 Tire] i T2[°C] cn r—^ m (N tn ΓΠ m r- 4 週[%] 8 週[%] 16 週[%] 24 週[%] (d)空隙 4 週[%] ι 8 週[%] 16 週[%]J 24 週[%] (f)溢出 | 4 週[%] I 8 週[%] 16 週[%] 24 週[%] -1 (b) A階穩定性 (c) B階穩定性 (e) B階後的空隙 (g) Β階後的溢出 i寸 200813152 [表4][e<] Embodiment 11 rn On sr * gr··, 00 T—ir—< : <N m Os On Μη 00 On oo σί rn Os 20/20 20/20 20/20 20/20 丨20 /20 ο δ Ο ο (Ν δ ο CN δ ο Γ <| δ Example 10 S ES r-< 1 -< 〇! * ^"' * 1—< SS 00 vd G\ rn ON \ o 〇δ oo ο Ci δ ο CJ ο ο CN Ο 19/20 17/20 15/20 14/20 14/20 Example 9 inch*f τ—η 〇\ oo 5 r—sss S y—> < N m vd Os ^T) On OO home o CN δ o CN o Ο CN ο S ο (Ν ΓΠ ο CN Ο ο ο Qj ο ο CN Ο ο CN δ Example 8 ss CN| >< r < ;ssgr—< Os s; αί rn αί ON 〇\ o (N 〇oo ο δ ο ο Ο (Ν δ ο (Ν Ο ο ο ο δ ο CN Ο ο δ Example 7 ss < N r * s 1—« s 1 to Ϊ—* τ-H 00 a\ 00 卜: ON wo ON (N o CN δ o Q o ο CN δ ο § ο CN ο ο CN Ο ο CJ ο ο (Ν δ ο Ci ο ο ο Example 6 st—i ON OO t—I 〇r—H sti , <1 gr—H 卜vd ON \〇Os ir> ON Os o CN oo CN o ο 04 Ο ο (Ν ο Ci ο ο <Ν Ο ο rg ο δ ο CN Ο ο δ Example 5 Os (N On ί· < 〇sg l> y « r-< (N 〇i (N v〇Os VO On 00 Os δ o (N o Ο ο Ο CN Ο ο Ci ο ο CN Ο ο CS ο CJ δ ο (Ν Ο ο δ Example 4 oo r—HS r_H sr—^ g OO T—< O) ON ... ON OO vd 0's Bu\D ON ooo CN o ο ο ο (Ν Ο ο (Ν δ ο CN Ο Ο CN Ο ο 04 Ο ο ο ο δ Example 3 ON G\ 2 sy—* ST 4 0 i—H 1 tr—^ τ—H Bu\D On inch in On m ON CN On o cs δ oo ο <Ν Ο Ο ο CJ ο ο CN Ο ο C! Ο (Ν Ο ο ο ο CN δ Example 2 o rH r—« sr—1 s 〇1 < r—* CN Os ON ON 卜 0's in ... ON o CN oo CN ο δ Ο ο ο ο ο (Ν Ο ο (Ν Ο ο 04 ο ο CN Ο ο (Ν δ Example 1 oo ON I· < r-' » sr—· g (N r - < r - I1 inch s; Os v〇On τ - H VD Os o CN ooo Ο i (Ν Ο ο ο ο § ο (Ν Ο 04 ο ο Q ο ο (Ν δ δ 1 Tire ] i T2[°C] cn r—^ m (N tn ΓΠ m r- 4 weeks [%] 8 weeks [%] 16 weeks [%] 24 weeks [%] (d) Void 4 weeks [%] ι 8 Week [%] 16 weeks [%]J 24 weeks [%] (f) Overflow | 4 weeks [%] I 8 weeks [%] 16 weeks [%] 24 weeks [%] -1 (b) A-order stability (c) B-order stability (e) B-order gap (g) After-level overflow i inch 200813152 [Table 4]
參考例1 比較例1 比較例2 比較例3 比較例4 (a) T1[°C] 75 ND ND ND ND 反應性 T2[°C] 192 185 198 132 125 】天 103 100 100 104 110 (b) A階穩定性 2天 105 101 100 〗08 132 3天 112 102 101 126 175 7天 128 102 101 182 258 4 週[%] 98.1 96.9 97.8 79.4 72.1 (c) B階穩定性 8 週[%] 97.4 95.9 96.9 74.2 63.5 16 週[%] 97.1 95.0 96.2 70.2 53.8 24 週[%] 96.8 94.3 95.1 65.2 45.3 (d)空隙 0/20 0/20 0/20 0/20 0/20 4 週[%] 0/20 0/20 0/20 NA NA (e) B階後的空隙 8 週[%] 0/20 0/20 0/20 NA NA 16 週[%] 0/20 0/20 0/20 NA NA 24 週[%] 0/20 0/20 0/20 NA NA (f)溢出 0/20 20/20 20/20 0/20 0/20 4 週[%] 15/20 20/20 20/20 NA NA (g) B階後的溢出 8 週[%] 12/20 . 20/20 20/20 NA NA 16 週[%] 5/20 20/20 20/20 NA NA 24 週[%] 3/20 20/20 20/20 NA NAReference Example 1 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 (a) T1 [°C] 75 ND ND ND ND Reactivity T2 [°C] 192 185 198 132 125 】Day 103 100 100 104 110 (b) A-order stability 2 days 105 101 100 〗 08 132 3 days 112 102 101 126 175 7 days 128 102 101 182 258 4 weeks [%] 98.1 96.9 97.8 79.4 72.1 (c) B-order stability 8 weeks [%] 97.4 95.9 96.9 74.2 63.5 16 weeks [%] 97.1 95.0 96.2 70.2 53.8 24 weeks [%] 96.8 94.3 95.1 65.2 45.3 (d) Void 0/20 0/20 0/20 0/20 0/20 4 weeks [%] 0/20 0/20 0/20 NA NA (e) Clearance after B-stage 8 weeks [%] 0/20 0/20 0/20 NA NA 16 weeks [%] 0/20 0/20 0/20 NA NA 24 weeks [%] 0/20 0/20 0/20 NA NA (f) Overflow 0/20 20/20 20/20 0/20 0/20 4 weeks [%] 15/20 20/20 20/20 NA NA ( g) Overflow after B-stage 8 weeks [%] 12/20 . 20/20 20/20 NA NA 16 weeks [%] 5/20 20/20 20/20 NA NA 24 weeks [%] 3/20 20/ 20 20/20 NA NA
如表3以及表4所示可知,本發明之組成物於A階時 的黏度增加均小於30%,於A階的保存穩定性優良。而且, 本發明之組成物,即使於B階狀態經過預定時間後,亦表 現出初期之95%或者95%以上的硬化發熱,於B階的保存 穩定性優良。於比較例1以及比較例2中,於B階時的保 存穩定性大致為95%,但若於B階後裝載晶片,則產生空 隙或者溢出。相對於此,本發明之組成物即使於B階後, 亦完全無空隙以及溢出的發生。 實施例12〜17 42 200813152 入叫將ί表5所示的質量份的各成分,使用25°C的行星混 β 口。進行此合’使之通過25 ◦的三輥機後,於μ。匚下以行 ί混^器力口以混☆,製備組成物。另外,於製備組成物: 刖’。7刀別將環氧樹脂、硬化劑以及硬化促進劑放置於 150+C: 5 mmHg的恆溫槽中6小時,以及將粒子狀熱可塑 =树知放置於丨⑻。C、小於等於5 mmHg的恒溫槽中%小 犄’進行除去揮發成分的處理。若經過該處理則以「-」表 示表表5中,例如「環氧樹脂a_」表示對上述環氧樹脂 a進行有上述處理。 [4 5] ----- 實施例12 實施例13 實施例]4 實施例15 實施例16 _——-- f施例17 (A)環氧樹脂 a- 3.· cl- 3.- S- a- --------- 34.6 34.6 34.6 34.6 34 6 34.6 (B)硬化劑 n- n- 1> n- n- --—·—--— n- —:------ 65.4 65.4 65.4 65.4 65.4 _65.4 (D)硬化促進劑 ο- Ι ο- Ι ο- Ι c- 1 Ο Ι c~ 1 (C)熱可塑性 e- e- e- f- --—--* h- 樹脂粒子 20 5 50 20 g_ 20 20 二氧化矽 123.5 108.5 153.5 123.5 123.5 123.5 碳黑 1 1 1 1 1 J__ KBM-403 1.5 1.5 1.5 1.5 1.5 1.5As shown in Table 3 and Table 4, the composition of the present invention has an increase in viscosity at the A-stage of less than 30%, and is excellent in storage stability at the A-stage. Further, the composition of the present invention exhibits an initial 95% or 95% or more of hardening heat generation even after a predetermined period of time in the B-stage state, and is excellent in storage stability at the B-stage. In Comparative Example 1 and Comparative Example 2, the storage stability at the B-stage was approximately 95%, but if the wafer was loaded after the B-stage, voids or overflow occurred. On the other hand, even after the B-stage, the composition of the present invention has no voids and overflow. Examples 12 to 17 42 200813152 Each component of the mass parts shown in Table 5 was used, and a planetary mixed β port of 25 ° C was used. Perform this combination and pass it through a 25-inch three-roller at μ. The composition is prepared by mixing the ☆ and mixing the ☆. In addition, in the preparation of the composition: 刖'. The epoxies, hardeners, and hardening accelerators were placed in a 150+C: 5 mmHg thermostat for 6 hours, and the particulate thermoplastics were placed in the crucible (8). C: % small 犄 in a thermostatic bath of 5 mmHg or less is subjected to a treatment for removing volatile components. When this treatment is performed, "-" is used to indicate the table 5, and for example, "epoxy resin a_" indicates that the above-mentioned epoxy resin a is subjected to the above treatment. [4 5] ----- Example 12 Example 13 Example] 4 Example 15 Example 16 _——-- f Example 17 (A) Epoxy resin a- 3.· cl- 3.- S- a- --------- 34.6 34.6 34.6 34.6 34 6 34.6 (B) Hardener n- n- 1> n- n- ---·---- n- —:--- --- 65.4 65.4 65.4 65.4 65.4 _65.4 (D) Hardening accelerator ο- Ι ο- Ι ο- Ι c- 1 Ο Ι c~ 1 (C) Thermoplasticity e- e- e- f- --- --* h- Resin particles 20 5 50 20 g_ 20 20 Ceria 123.5 108.5 153.5 123.5 123.5 123.5 Carbon black 1 1 1 1 1 J__ KBM-403 1.5 1.5 1.5 1.5 1.5 1.5
對所得之各組成物,進行上述(a)〜(g)的試驗以 及下述試驗(h)〜(k)。並且對上述實施例ι〜丨丨中的若 干例’亦進行(h)〜(k)的試驗。結果示於表6以及7 中0 43 200813152For each of the obtained compositions, the above tests (a) to (g) and the following tests (h) to (k) were carried out. Further, tests for (h) to (k) were also carried out for the above examples in the above examples ι to 丨丨. The results are shown in Tables 6 and 7 in 0 43 200813152
(h) TGA 取各組成物10 mg裝入鋁坩鍋中,以空的鋁坩鍋為參 貝?、ΰ式料’使用 TGA (thermogravimetric analyzer,熱重量分 析儀/MEITLER製造),於空氣中以1〇。〇/分鐘的升溫速度 自25°C升溫至300°C,測定至200°C為止的質量減少(%)。 (i) 150°C 〜200°C 的黏度(h) TGA Take 10 mg of each composition into an aluminum crucible, use an empty aluminum crucible as a scallop, and use a TGA (thermogravimetric analyzer, thermogravimetric analyzer/MEITLER) in the air. Take 1〇. The temperature increase rate of 〇/min was raised from 300 ° C to 300 ° C, and the mass loss (%) was measured up to 200 ° C. (i) Viscosity from 150 ° C to 200 ° C
將各組成物280 μΐ夾置於直徑18 mm、間隙i」2 mm 的平行圓盤中,使用流變計(rhe_eter ) ( UBM股份有限 公司製造),於空氣中以1(TC/分鐘的升溫速度自25t:升溫 至3〇(TC,測定150°C〜20(TC的黏度,求出平均值。 (j)樹脂密封後的空隙 製作如圖4所示的經樹脂密封的半導體裝置的試驗 片,對各忒驗片進行SAT觀測,計算含有空隙的試驗片數 /總試驗片數(20個)。試驗片的製作方法如下所述。 於表面上塗布有阻焊劑(3〇μηι厚)的BT基板(200 μπι厚’ 35 mmx35 mm)上塗布環氧樹脂組成物(5〇厚, 12mmxl2mm)。以較Τ1高20°C的溫度對它加熱1〇分鐘 使之精化,以15(rc (晶片)趣。c (基板)A Mpa/1 秒裝載形成有氮化賴㈣晶片( _厚,ΐ2·5 mm 5 mm),以KMC-2520 (信越化學工業製造之環氧 ,於模具溫度17宂’注入時間1〇秒,注入壓力 7〇KPa’成型時間9G秒,後硬化條件⑽。c/2小時下,將 其岔封。成型後的試驗片的大小為咖哗厚,35 mmx35 44 200813152 1 (k)樹脂密封後的晶粒位移 使用軟X射線透射裝置,測定20個圖4的試驗片的 晶粒位移值。此處晶粒位移值為晶片的4角的直線移動距 離的總計值,總計值大於50 μηι為不合格,計算不合格的 試驗片數/總試驗片數(20個)。 [表6]280 μΐ of each composition was placed in a parallel disk with a diameter of 18 mm and a gap of i”2 mm, and a rheometer (rhe_eter) (manufactured by UBM Co., Ltd.) was used to raise the temperature by 1 (TC/min). The speed was raised from 25t: 3 〇 (TC, 150 ° C to 20 (the viscosity of TC was measured, and the average value was obtained. (j) The void after resin sealing was tested as shown in FIG. 4 for the resin-sealed semiconductor device. For the SAT, the SAT observation was performed on each test piece, and the number of test pieces containing voids/the total number of test pieces (20 pieces) was calculated. The test piece was produced as follows. The surface was coated with a solder resist (3〇μηι thick). The BT substrate (200 μπι thick '35 mm x 35 mm) was coated with an epoxy resin composition (5 〇 thick, 12 mm x 12 mm). It was heated at a temperature 20 ° C higher than Τ 1 for 1 使 to refine it to 15 ( Rc (wafer) interesting. c (substrate) A Mpa / 1 second loading formed with nitrided (four) wafer (_ thick, ΐ 2·5 mm 5 mm), KMC-2520 (Xinyue Chemical Industry's epoxy, in the mold The temperature is 17宂' injection time is 1 〇 second, the injection pressure is 7〇KPa' molding time is 9G seconds, and the post-hardening condition is (10). The size of the test piece after molding was a curry thickness, 35 mm x 35 44 200813152 1 (k) Grain displacement after resin sealing The crystal grains of 20 test pieces of FIG. 4 were measured using a soft X-ray transmission device. Displacement value: Here, the grain displacement value is the total value of the linear movement distance of the four corners of the wafer, and the total value is greater than 50 μηι is unqualified, and the number of unacceptable test pieces/the total number of test pieces (20 pieces) is calculated. 6]
實施例 12 實施例 13 實施例 14 實施例 15 實施例 16 實施例 17 (a) 反應性 T1[°C] 99 104 96 101 100 87 T2[°C] 192 191 193 193 190 194 (b) A階穩定性 1天 101 100 103 101 102 102 2天 102 101 107 102 104 103 3天 105 102 111 104 108 108 7天 110 104 119 108 114 115 (C) B階穩定性 4 週[%] 97.4 97.0 98.1 97.0 96.4 97.6 8 週[%] 96.4 96.3 97.9 95.7 95.7 97.0 16 週[%] 96.1 96.0 97.2 95.4 95.4 96.4 24 週[%] 95.8 95.1 96.8 95,4 95.1 95.9 (d)空隙 0/20 0/20 0/20 0/20 0/20 0/20 (e) B階後的空 隙 4 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 8 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 16 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 24 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 (f)溢出 0/20 0/20 0/20 0/20 0/20 0/20 (g) B階後的溢 出 4 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 8 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 16週[%] 0/20 0/20 0/20 0/20 0/20 0/20 24 週[%] 0/20 0/20 0/20 0/20 0/20 0/20 45 200813152 [表7] 實施 例1 實施 例2 實施 例3 實施 例7 實施 例8 實施 例]0 實施 例]1 參考 例1 (h) TGA[%] 1.5 2.1 1.2 2.6 1.9 0.6 0.9 0.8 (i) 150°C 〜200°C 的黏 度[Pa · s] 210 220 280 350 420 8.2 1020 9.4 (j)密封後的空隙 6/20 13/20 2/20 18/20 7/20 0/20 20/20 0/20 (k )密封後的晶粒位移 0/20 0/20 0/20 0/20 0/20 20/20 0/20 20/20Example 12 Example 13 Example 14 Example 15 Example 16 Example 17 (a) Reactivity T1 [°C] 99 104 96 101 100 87 T2 [°C] 192 191 193 193 190 194 (b) Stage A Stability 1 day 101 100 103 101 102 102 2 days 102 101 107 102 104 103 3 days 105 102 111 104 108 108 7 days 110 104 119 108 114 115 (C) B-order stability 4 weeks [%] 97.4 97.0 98.1 97.0 96.4 97.6 8 weeks [%] 96.4 96.3 97.9 95.7 95.7 97.0 16 weeks [%] 96.1 96.0 97.2 95.4 95.4 96.4 24 weeks [%] 95.8 95.1 96.8 95,4 95.1 95.9 (d) Void 0/20 0/20 0/20 0/20 0/20 0/20 (e) Clearance after B-stage 4 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 8 weeks [%] 0/20 0/ 20 0/20 0/20 0/20 0/20 16 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 24 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 (f) Overflow 0/20 0/20 0/20 0/20 0/20 0/20 (g) Overflow after B-stage 4 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 8 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 16 weeks [%] 0/20 0/20 0/20 0 /20 0/20 0/20 24 weeks [%] 0/20 0/20 0/20 0/20 0/20 0/20 45 200813152 [Table 7] Example 1 Example 2 Example 3 Example 7 Implementation example 8 EXAMPLES] Example 1 Reference Example 1 (h) TGA [%] 1.5 2.1 1.2 2.6 1.9 0.6 0.9 0.8 (i) Viscosity at 150 ° C to 200 ° C [Pa · s] 210 220 280 350 420 8.2 1020 9.4 (j) Sealed gap 6/20 13/20 2/20 18/20 7/20 0/20 20/20 0/20 (k) Grain displacement after sealing 0/20 0/20 0/ 20 0/20 0/20 20/20 0/20 20/20
[表8] 實施例 12 實施例 13 實施例 14 實施例 15 實施例 16 實施例 17 (h) TGA[%] 0.6 0.8 0.4 0.7 0.5 0.8 (i) 150°C 〜200°C 的黏度 [Pa-s] 230 12 950 240 320 38 (j)密封後的空隙 0/20 0/20 0/20 0/20 0/20 0/20 (k)您封後的晶粒位移 0/20 0/20 0/20 0/20 0/20 0/20 實施例12〜17的組成物,由(h) TGA產生的減少量 小於1%,且,(i) B階黏度為10 Pa · s〜1000 Pa · s,故 而即使於樹脂密封製程中使之硬化,亦不會產生空隙,且 無晶粒位移的現象。 本發明之組成物,可形成穩定的B階狀態,可適用為 要求高良率的半導體產品用黏晶劑。而且,具有預定的揮 發成分以及黏度的組成物,即使於晶片裝載後不設置硬化 製程,亦可進入線連接製程、樹脂密封製程,可提高半導 體裝置的生產性。 【圖式簡單說明】 46 200813152 圖1為實施例1之組成物的DSC圖。 圖2為表示於實施例中製作的裝載有矽晶片的試驗片 的構成的剖面圖。 圖3為表示空隙以及溢出的概念圖。 圖4為表示於實施例中製作的經樹脂密封的半導體裝 置試驗片的構成的剖面圖。 【主要元件符號說明】 47[Table 8] Example 12 Example 13 Example 14 Example 15 Example 16 Example 17 (h) TGA [%] 0.6 0.8 0.4 0.7 0.5 0.8 (i) Viscosity at 150 ° C to 200 ° C [Pa- s] 230 12 950 240 320 38 (j) Sealed gap 0/20 0/20 0/20 0/20 0/20 0/20 (k) Grain displacement after sealing 0/20 0/20 0 /20 0/20 0/20 0/20 The compositions of Examples 12 to 17 have a reduction of less than 1% by (h) TGA, and (i) B-order viscosity is 10 Pa · s to 1000 Pa · s, so even if it is hardened in the resin sealing process, no voids are generated and there is no grain displacement. The composition of the present invention can form a stable B-stage state and can be suitably used as a binder for semiconductor products requiring high yield. Further, the composition having a predetermined wave composition and viscosity can enter the wire bonding process and the resin sealing process even if the curing process is not performed after the wafer is loaded, and the productivity of the semiconductor device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS 46 200813152 FIG. 1 is a DSC chart of the composition of Example 1. Fig. 2 is a cross-sectional view showing the structure of a test piece loaded with a ruthenium wafer produced in the examples. Fig. 3 is a conceptual diagram showing voids and overflow. Fig. 4 is a cross-sectional view showing the structure of a resin-sealed semiconductor device test piece produced in the examples. [Main component symbol description] 47
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95133599A TW200813152A (en) | 2006-09-12 | 2006-09-12 | Epoxy resin composite and die bonding agent containing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95133599A TW200813152A (en) | 2006-09-12 | 2006-09-12 | Epoxy resin composite and die bonding agent containing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200813152A true TW200813152A (en) | 2008-03-16 |
Family
ID=44768219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95133599A TW200813152A (en) | 2006-09-12 | 2006-09-12 | Epoxy resin composite and die bonding agent containing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200813152A (en) |
-
2006
- 2006-09-12 TW TW95133599A patent/TW200813152A/en unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI278392B (en) | Thermally conductive composite sheet and manufacturing method thereof | |
TWI741212B (en) | Resin composition, resin film, semiconductor laminate, semiconductor laminate manufacturing method, and semiconductor device manufacturing method | |
TWI355720B (en) | Area mount type semiconductor device, and encapsul | |
JP4809355B2 (en) | Epoxy resin composition and die-bonding agent containing the composition | |
JP5278457B2 (en) | Epoxy resin composition, die attach method using the same, and semiconductor device having cured product of the composition | |
TW201139499A (en) | Thermosetting resin composition, flip-chip mounting adhesive, semiconductor device fabrication method, and semiconductor device | |
TWI293082B (en) | ||
TW200427772A (en) | Resin composition for encapsulating semiconductor chip and semiconductor device therewith | |
TW200417577A (en) | Epoxy resin composition and semiconductor device using thereof | |
JP5019363B2 (en) | Epoxy resin adhesive composition | |
JP2008308614A (en) | Adhesive composition for screen printing | |
TW500759B (en) | Epoxy resin composition for semiconductor encapsulation | |
TW201111467A (en) | Adhesive for semiconductor bonding, adhesive film for semiconductor bonding, method for mounting semiconductor chip, and semiconductor device | |
KR102072060B1 (en) | Epoxy resin composition and electronic component device | |
JP6614700B2 (en) | Molding material for sealing and electronic component device | |
JP2017105883A (en) | Liquid resin composition, die attach method using the composition, and semiconductor device having cured product of the composition | |
TW201113356A (en) | Sealant composition for liquid crystal display device | |
TW201107362A (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same | |
TWI311579B (en) | Basic silane coupling agent organic carboxylate composition, method for producing the same, and epoxy resin composition containing the same | |
TWI748126B (en) | Resin composition, resin film, semiconductor laminate, semiconductor laminate manufacturing method, and semiconductor device manufacturing method | |
JP5107177B2 (en) | Die bond agent composition | |
TW200813152A (en) | Epoxy resin composite and die bonding agent containing the same | |
JP6566349B2 (en) | Epoxy resin molding material for sealing and electronic parts | |
JP2018190911A (en) | Die Bonding Agent | |
TW201245261A (en) | Resin composition for electronic component and electronic device |