TW200812036A - Bump structures and packaged structures thereof - Google Patents
Bump structures and packaged structures thereof Download PDFInfo
- Publication number
- TW200812036A TW200812036A TW096104587A TW96104587A TW200812036A TW 200812036 A TW200812036 A TW 200812036A TW 096104587 A TW096104587 A TW 096104587A TW 96104587 A TW96104587 A TW 96104587A TW 200812036 A TW200812036 A TW 200812036A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal
- bump
- substrate
- containing layer
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 133
- 239000002184 metal Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229920000642 polymer Polymers 0.000 claims abstract description 77
- 239000002131 composite material Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 194
- 238000000034 method Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000009662 stress testing Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000975394 Evechinus chloroticus Species 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 ingot Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
200812036 九、發明說明: 【發明所屬之技術領域】 本舍明係有關於半導體結構,特別係關於一種凸塊 結構及使用該凸塊結構的封裝結構。 【先前技術】 隨著電子產品的發展’半導體技術係廣泛地應用於 ―、中央處理單元、液晶顯示器、發光二極體、雷 :二極體、及其他元件或晶片組的製造。為了達成高集 積度與兩速的目標,而縮減半導體積體電路晶片的尺 2業界職出各種材料與技術,以達成上述集積度與 k又的目“並克服製造時所發生的障礙。另外 :土二亦同步地發展。例如,使用凸塊結構來強化晶 入土板例如印刷電路板之間的電性連接。 心:1圖為一剖面示意圖,係顯示習知的凸塊結構。 j >的凸塊結構11G係分別形成於基板_上/範圍_ H)5上。金屬墊1()5係與其下的電路與元 2使電流或電壓可經由金屬墊1〇5作用於上述電路與元 二°凸塊結構m的材f為錫錯合金,其提供—導通 徑’使-外部電源能將電流或電麼送入凸塊結構 方的電路與元件。 Γ 板或半導體基底。-底膠則形二::::刷:: 0503-A32511 TWF/dwwang 200812036 塊結構110接觸。基板1〇〇、 與上述另-基板構成一封务 n =、上述底勝、 ^ 对衣、、、口構,上述底膠係用以鱗知 構110的應力。然後對上述封裝結構進行 種可#度測補如熱測試與應力測試。在某些 中’無法適當地緩和作用於凸塊結構11G的應力時^ 塊結構110有可能因該應力的作用而發生破裂;在某此 更糟的情況中,形成於凸塊結構110下的一低介電常: 介電層(未㈣)有可能發生破裂與剝離。另外 η。係形成於金屬㈣5上。為了達成基底間理想:: 連結,凸塊結才冓110必須夠大,例如最小半秤為 150〜200μηΐ,而金屬墊1〇5亦必須夠大例如具有長乘以寬 為約1〇〇μΓηχ100μιη的大小,以支撐凸塊結構ιι〇。因ς 亡述大尺寸的封裝結構,即使使用小尺寸的技術來製造 半導體晶片,仍難以縮減封裝後的晶片尺寸。 習知技術中,美國專利US 5,578,527提供一種連接 構造,關於其整體内容可參酌其說明。在該文獻中,係 以導體粒子接觸複合凸塊,上述複合凸塊具有一聚合物 本體與:導體金屬覆膜,上述聚合物本體具有相對較低 的揚氏模數(Young’s Modulus),❿上述導體金屬覆膜則 形成連接結構。上述聚合物本體之相對較低的揚氏模數 可減少接合的過程中的回彈力。然而,上述複合凸塊係 形成於連接墊上,而如前所述,其結構仍會面臨在縮減 封裝後的晶片尺寸方面的困難度。 如上所述,我們需要一較佳的銲墊結構與封裝結構。 0503-A3251 lTWF/dwwang 6 200812036 【發明内容】 一有鑑於此,本發明係提供一種凸塊結構,適用於將 -基板連接在-起’包含:一複合物結構於一第一基板 t,上述複合物結構包含至少一第一聚合物層與至少一 第-含金屬的層狀物;以及一第二含金屬的層狀物,至 少部分覆蓋上述複合物結構的上表面,並自上述複合物 ^構的上表面延伸至上述第一基板的一表面,#中上述 第二含金屬的層狀物係薄於上述第一含金屬的層狀物。 本發明係又提供—種凸塊結構,適用於將二基板連 接在起’包合·-第—聚合物層於—第__基板上;一 的含金屬的層狀物於上述第一聚合物層上,其中上述 溥的含金!的層狀物至少部分覆蓋上述第一聚合物層, 並自上述第一聚合物層的上表面延伸至上一 本發明係又提供—種封裝結構,包含··複數個凸塊 、4,以及複數個第—接合墊結構於—第二基板上,其 中上述凸塊結構中的至少—部分係、黏著於上述第二基板 t的對應的第-接合墊結構;其巾上述各凸塊結構包 =i合物結構於—第—基板上,上述複合物結構包 :一匕一乐一聚合物層與至少一第一含金屬的層狀物; 槿沾t:含金屬的層狀物,至少部分覆蓋上述複合物結 、表面,並自上述複合物結構的上表面延伸至上述 以^-導體層於上述薄的含金屬的層狀物上,上述導體 層貫質上覆蓋上述薄的含金屬的層狀物的上表面。 〇5〇3-A325UTWF/dwwang 200812036 第一基板的一表面,其中上述第二含金屬的層狀物係薄 於上述第一含金屬的層狀物。 【實施方式】 為讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂,下文特舉出較佳實施例’並配合所附圖式’ 作詳細說明如下: 第2A〜2F圖為一系列之剖面示意圖,係顯示本發明 較佳實施例之凸塊結構,其係形成於連接墊結構上。 請參考第2A圖,一基板201包含至少一連接墊結構 例如連接墊結構205,其係形成於基板201中或基板201 上,複數個凸塊結構200則形成於連接墊結構205上。 在某些實施例中,一凸塊結構200包含一複合物結構203 與一含金屬的層狀物2 3 0。複合物結構2 0 3包含至少一聚 合物層210與至少一含金屬的層狀物220,複合物結構 203係形成於基板201的連接墊結構205上。含金屬的層 狀物230至少覆蓋含金屬的層狀物220的上表面的一部 分,並從複合物結構203的上表面,沿著含金屬的層狀 物220與聚合物層210的側面,延伸至基板201的表面 例如為連接墊結構205。在某些實施例中,含金屬的層狀 物220係形成於第2A圖所示的聚合物層210上;在其他 的實施例中,聚合物層210係形成於含金屬的層狀物220 上。 基板201可以是矽基板、瓜-V族化合物基板、顯示 0503-A3251 lTWF/dwwang 8 200812036 器基板、或發光二極體(light emitting diode ; LED)而共同 標記為基板201,其中上述顯示器基板例如為液晶顯示器 (liquid crystal display ; LCD)、電漿顯示器、陰極射線管 顯示器、或是電致發光(electro luminescene ; EL)顯示器。 連接墊結構205包含例如含金屬的層狀物(如铭、銅、或 鋁/銅)、複晶矽層、或其他導體材料層。 聚合物層210可以是熱塑性材料層、熱固性材料層、 彈性體、或列配位聚合物(coordination polymer)。聚合物 層210的形成係作為一應力缓衝層,在例如將凸塊結構 200黏著於其他基板的連接墊結構時、與進行應力試驗 時,用以釋放作用在凸塊結構200上的正向應力(normal stress)與剪應力(shear stress)。在某些實施例中,自連接 墊結構205的上表面算起,到聚合物層210的上表面, 聚合物層210的厚度為50〜60μηι。聚合物層210的厚度 的決定的依據,可以是:預估會作用於凸塊結構200的 應力。在一實施例中,其決定了聚合物層210的厚度, 因此在應力試驗中凸塊結構200不會遭受實質上的破 壞。聚合物層210的形成可使用例如旋轉塗佈法。在某 些實施例中,聚合物層210的截面可以是例如正方形或 長方形。 含金屬的層狀物220可以是例如一無錯合金(如金或 錫/銀/銅合金)、一含錯合金(如錫錯合金)、或其他凸塊金 屬材料。含金屬的層狀物220的形成係作為一傳導路徑, 如同應力緩衝層,用以釋放一正向應力。在某些實施例 0503-Α3251 lTWF/dwwang 9 200812036 中,從聚合物層210的上表面算起,到含金屬的層狀物 220的上表面,含金屬的層狀物220的厚度為〜⑽μιη。 含金屬的層狀物220的厚度’可以隨著連接墊結構205 與另一基板(未繪示於第2Α圖、但緣示於第5圖)的一連 接墊結構之間所需的電性連接來作變化。含金屬的層狀 物220的形成方法可以是例如物理氣相沈積(physical vapor deposition ; PVD)法、化學氣相沈積(chemical vapor deposition; PVD)法、電化學沈積、無電化學鍍(electroless chemical plating)法、或是其他適於形成一含金屬的層狀 物的方法。 含金屬的層狀物230可以是例如鋁、銅、鋁/銅、或 其他導體材料層。含金屬的層狀物230亦可提供所需的 應力釋放的功能。將凸塊結構200黏著於另一基板(未繪 示於第2A圖、但繪示於第5圖)的一連接墊結構與進行 一應力測試時,含金屬的層狀物230可有效地釋放作用 於凸塊結構200的應力。另外,含金屬的層狀物230更 提供其他的特徵,請參考後文對第3圖與含金屬的層狀 物220第4A〜4F圖的敘述。在某些實施例中,含金屬的 層狀物230的形成方法可以是例如物理氣相沈積法、化 學氣相沈積法、電化學沈積、無電化學鍍法、或是其他 適於形成一含金屬的層狀物的方法。 在某些實施例中,從含金屬的層狀物220的上表面 算起,到含金屬的層狀物230的上表面,含金屬的層狀 物230的厚度為不大於5000A。含金屬的層狀物230的 0503-A3251 lTWF/dwwang 10 200812036 厚度可依據所需的應力釋放的值、以及連接墊結構205 與另一基板的對應的連接墊結構之間所需的特定的電性 連接而變化。在某些實施例中,含金屬的層狀物230較 好為具有足夠的厚度’而使作用於凸塊結構2〇〇例如含 金屬的層狀物230上的應力,不會實質上對含金屬的層 狀物230的上表面造成損壞或破裂。含金屬的層狀物230 的上表面的破裂會對連接墊結構205與另一基板(未繪示) 的連接墊結構之間的電性連接造成不良影響。然而,當 含金屬的層狀物220提供所需的電性連接,而使電流可 經由含金屬的層狀物220到達形成於含金屬的層狀物22〇 與聚合物層210的侧面的含金屬的層狀物23〇的部份 時,含金屬的層狀物230的上表面的破裂就可以不再是 個問題。如上所述,在某些實施例中,聚合物層21〇可 形成於含金屬的層狀物220上。在本實施例中,若是聚 合物層210以其上表面直接接觸含金屬的層狀物2 3 0 時,含金屬的層狀物230的破裂會造成凸塊結構200的 電阻的增加。 在某些實施例中,含金屬的層狀物230的材料的選 擇方面,係與凸塊結構200所黏著的另一基板(未繪示) 的連接墊結構的材料有關連性。例如凸塊結構200所黏 著的另一基板(未繪示)的連接墊結構的材料為鋁銅(A1Cu) 時,含金屬的層狀物230使用鋁銅可強化凸塊結構200 與上述另一基板(未繪不)的連接塾結構的接者。 在某些實施例中,含金屬的層狀物230只需要達成 0503-A32511 TWF/dwwang 11 200812036 基板201與另一基板之間所需的電性連接,而只覆蓋一 部分的含金屬的層狀物220的上表面。在如圖所示的某 些實施例中,薄的含金屬的層狀物230係完全覆蓋含金 屬的層狀物220與聚合物層210。在某些實施例中,凸塊 結構200係形成於連接墊結構205上。為了達成基板201 與另一基板之間所需的電性連接,例如對正方形的連接 墊結構205而言,其尺寸約為ΙΟΟμπιχΙΟΟμιη ;對圓形的 連接墊結構205而言,其直徑約為ΙΟΟμπι。 在某些實施例中,凸塊結構200亦包含一聚合物層 260,其形成於含金屬的層狀物230的侧壁旁。聚合物層 260的形成係用以在將凸塊結構200黏著於另一基板的連 接墊結構與進行應力測試時,釋放作用於凸塊結構200 的應力。在某些實施例中,聚合物層260的厚度為 50〜60μπι。在其他實施例中,若是凸塊結構200中的聚合 物層210可提供所需的應力釋放的功能時,就有可能未 使用聚合物層260。 第2Β圖係顯示一例示的凸塊結構200Β的剖面圖, 其具有一梯形的聚合物層210Β。第2Α與2Β圖中等效的 元件係使用相同的元件符號,而僅在第2Β圖中對應的元 件符號的末端附加字母「Β」,以資區別。聚合物層210Β 具有梯形的截面,梯形的聚合物層210Β的形成方法可使 用異向性的姓刻製程,例如其垂直方向的触刻速率大於 水平方向的蝕刻速率。 第2C圖係顯示一例示的凸塊結構200C的剖面圖, 0503-Α32511 TWF/dwwang 12 200812036 其具有一半圓形的聚合物層210C。第2C圖所示的半圓 形的凸塊結構200C的形成方法可以是例如熱處理,像是 一合金製程。聚合物層210C、含金屬的層狀物220C、與 含金屬的層狀物230C的厚度’在第2C圖中分別標示為 「a」、「b」、與「c」,同前文對第2A圖所作的敘述。 第2D圖係顯示另一例示的凸塊結構200D的剖面 圖,其具有形成於一聚合物層内的至少一導體插銷225。 第2D圖所示的導體插銷225可以是例如一介層窗/接觸 (via/contact)插銷,可以是線形或其他形狀的材料,其延 伸貫穿聚合物層210而達到連接墊結構205。在某些實施 例中,導體插銷225包含類似於含金屬的層狀物220D的 材質。另外在某些實施例中’係以相同的製程形成導體 插銷225與含金屬的層狀物220D。 第2E圖係顯示另一例示的凸塊結構200E的剖面 圖’其形成於一連接墊結構上。在本實施例中,並未如 第2A圖所示一般將含金屬的層狀物220形成於聚合物層 210E與含金屬的層狀物230E之間,而是將一導體層250 形成於含金屬的層狀物230E上。 凸塊結構200E包含聚合物層210E、含金屬的層狀 物230E、與導體層250。聚合物層210E係形成於基板 201上。含金屬的層狀物230E係形成於聚合物層210E 上,其中含金屬的層狀物230E係至少覆蓋聚合物層210E 的一部分,並自聚合物層210E的上表面延伸至基板201 的一表面例如連接墊結構205。導體層250係形成於含金 0503-A3251 lTWF/dwwang 13 200812036 屬的層狀物230E上,其實質上覆蓋含金屬的層狀物230E 的上表面。在某些實施例中,導體層250的組成與厚度 係與第2A圖所示的含金屬的層狀物220相仿。導體層 250的形成係用以達成連接墊結構205與另一基板(未繪 示於第2E圖,但繪示於第5圖)的一連接墊之間所需的 電性連接與應力釋放的程度。 如上所述,在某些實施例中,導體層250的材料的 選擇方面,係與凸塊結構2⑽E所黏著的另一基板(未繪 示)的連接塾結構的材料有關連性。例如若是導體層2 5 0 為一含金屬的層狀物例如為凸塊金屬層,凸塊結構200E 所黏著的另一基板(未繪示)的連接墊結構可包含相同的 材料,以強化凸塊結構200E與上述另一基板(未繪示)的 連接墊結構的接著。 第2F圖係顯示另一例示的凸塊結構200F的剖面 圖’其形成於一連接整結構上。一聚合物層240係形成 於一薄的導體層270與含金屬的層狀物230F之間,且為 導體層270所覆蓋。在某些實施例中,聚合物層240的 材質可與聚合物層210F相同,且二者的形成可使用相同 的聚合物形成製程。在某些實施例中,導體層270的材 質係與含金屬的層狀物230F相同。聚合物層2ΐ〇ρ與24〇 可在凸塊結構200F受到應力測試時提供應力緩衝,'斤 此時作用於凸塊結構200F的正向應力與剪應丄 碼力。除此夕 外,含金屬的層狀物230F與導體層270可在連 〈 205與其他基板的一連接墊之間提供所需的略 塾結構 兒性連接。 0503-A3251 lTWF/dwwang 14 200812036 如前所述,上述聚合物層的提供係作為一缓衝層, 而可以有效地缓和來自凸塊製程步驟的應力。 第3圖為一俯視示意圖,係顯示本發明較佳實施例 的一例示的局部佈局圖,其包含一連接墊區與複數個凸 塊結構,上述凸塊結構並未形成於連接墊結構上,而實 際上上述凸塊結構係與連接墊結構呈現水平間隔分佈。 第3與2A圖中等效的元件方面,出現在第3圖的元件符 號中在數值上,較出現在第2A圖的對應元件的符號增加 了 100。上述局部佈局圖中,在基板301上包含二個凸塊 結構300與一連接墊結構305。凸塊結構300係經由含金 屬的層狀物330與連接墊結構305連接,在後文有詳細 的敘述。 第4A〜4F圖為一系列之剖面示意圖,其係沿著第3 圖的剖面線4F-4F的剖面圖,係顯示用以形成第3圖所 示的一例示的凸塊的製程。第4A〜4F與2A圖中等效的 元件方面,出現在第4A〜4F圖的元件符號中在數值上, 較出現在第2A圖的對應元件的符號增加了 200。 請參考第4A圖,一含金屬的層狀物403係形成於基 板401之中或之上。保護層402與404依次形成於基板 401上。一連接墊結構405係形成於一開口内,上述開口 係穿透保護層402與404,而使連接墊結構405接觸含金 屬的層狀物403。含金屬的層狀物403係與形成於保護層 402之下的至少一裝置或電路連接,此含金屬的層狀物 403通常稱為「最上層金屬層」。含金屬的層狀物403可 0503-A32511 TWF/dwwang 15 200812036 、疋層的銅、銘、銘銅、或其他含金屬的材質,其形 f方法可以是例如物理氣相沈積法、化學氣相沈積法^ 黾化冬沈知热電化學鑛法、或是其他適於开^成一含全 屬的層狀物的方法。 ^ 保濩層402包含例如一聚合物層或一介電層。在某 ,貫施例中’保護層4G2可以是—多層結構例如氮化物/ 氧化物/氮化物/氧化物,其厚度分別約為 750曰A/200〇AM_A/2〇〇〇A。上述多層結構的形成方法可 以是例如化學氣相沈積法。保護層4〇4包含例如一聚合 物層或’丨黾層。在某些實施例中,保護層4〇2可以是 一多層結構例如為電漿增益氧化物/氮化物,其厚度 約為4_A/6_A。上述多層結構的形成方法可以是例 如化學氣相沈積法。上述穿透保護層4〇2與4〇4的開口(未 緣示^形成方法可以是相同或不_微影法與㈣法。 第4B ®係顯示形成一聚合物層410於保護層4〇4 上。如上所述,卩一層的聚合物所形成的聚合物層410, 可藉由例如旋轉㈣法而形成於健層4Q4上,秋後將 該層聚合物以曝光與顯影的製程加以圖形化,而 4B圖所示的聚合物層41 〇。 弟4C圖係顯示將一層含金屬的材料42〇&形成於 4B圖所示的結構上。該層含金屬的材料42〇a係用以形 含金屬的層狀物420(繪示於第4D圖)。該層含金屬的材 枓420a可以是例如一層的無錯合金(如金或錫/銀/鋼合 金)、含鉛合金(如鉛/錫合金)或其他凸塊金屬材料,其形 0503-A3251 lTWF/dwwang 16 200812036 成方法可以是物理氣相沈積、化學氣相沈積、電化學沈 積、無電化學鑛法、或是其他適於形成—含金屬的層狀 物的方法。 第4D圖係顯示含金屬的層狀物420的定義,並將1 形成於聚合物層410上。在形成該層含金屬的材料伽 後’使用-微影製程與一蝕刻製程,將該層含金屬的材 料420a圖形化,除去該層含金屬的材料*施的—部分, =成含金屬的層狀物42〇。在某些實施例中,該層聚合 制=層含金屬的材料4 2 〇 a的圖形化可使用相同的微影 衣転與餘刻製程。在其他實施例中,聚合物層彻與含 =的層狀物42G的形成係使用不同的微影製程無刻 :4E _顯示將—薄層的含金屬 於弟4〇圖所示的結構上。在某些實施例中,上述薄= 含金屬的材料430a係實質上順庫^ 他與含金屬的層狀物42〇上貝接塾結構 含金屬的材質…成方=銘,銅、或其他 ΐ二,9沈積法、電化學沈積、無電化學 疋^適於形成—薄的含金屬的層狀物的方法。/ 第4F圖為為一剖面示意圖,其為沿 線4F-4F的結構。在形成上 的° =剖面 後,使用-微影製程與一崎; 屬的材料伽圖形化,除去上層的含金 心碍噌的含金屬的材料 wwang °503-A32511 TWF/d 17 200812036 430a的一部分,而形士 α 緣示於第4F圖。第斤需的含金屬的層狀物430,其 塊結構4GG。料,含^ 7示與連接墊結構彻的凸 屬的層狀物430係自含金屬的層 表面,延伸至連接墊結構405,其係經由凸 =彻而提供連接塾結構4〇5與另一基娜會示於 !圖,但繪示於第5圖)之間的電性連接。以繪示於 ^ 3圖的佈局料為基礎,凸塊結構·並未形成於連 =構4〇5上’而由含金屬的層狀物430來構成基板 間的屯ίΐ連接。聚合物層41〇與含金屬的層狀物樣的 /成係用以作為基板間的應力緩衝層。由於連接墊結構 4〇5不再需要為了達成所需的電性連接而支撐凸塊結構 400,因此連接墊結構4Q5的尺寸可以縮減為例如鄭⑽ 的正方形連接墊或直徑%阿白勺圓形連接塾。在本 實施例中’因為所需的電性連接可藉由含金屬的層狀物 430來達成,而非大塊的凸塊結構400,而使凸塊結構400 的尺寸可以細減為例如75μιηχ75μιη的正方形凸塊結構或 直咎75μπι的圓形凸塊結構。由於可達成凸塊結構4〇〇 與連接塾結構405的尺寸縮減,可以較密集的佈局例如 較小的間隔(space),將連接墊結構405形成於基板401 上,而可達成封裝後晶片尺寸的縮減。在某些實施例中, 一連接塾結構的間距(pitch)例如包含上述連接墊結構的 見度與二個連接墊結構之間的間隔,可以是例如不大於 150μηι。如上所述,藉由本發明,可以依據先進技術的要 求來調整與改善連接墊結構4〇5的尺寸與連接墊結構4〇5 0503-Α3251 lTWF/dwwang 18 200812036 之間的間隔,例如先進技術要求較小的尺寸時,可達成 較小的連接墊結構405的尺寸與較小的連接墊姓楼^ 之間的間隔。 請再麥考第3圖,連接墊結構305係連接不止一個 凸塊結構300。在某些實施例中,其中一個凸塊結構3〇〇 可在其他的凸塊結構300損壞時,作為用以修復的備用 元件。在某些實施例中,係形成複數個鄰接連接墊結構 305的凸塊結構3〇〇,以強化基板3〇1與繪示於第5圖的 另一基板之間的黏著力。 繪示於第4Α〜4F圖的製程可以是任何方法,來用以 形成第2Α圖所示的凸塊結構。而亦可藉由繪示於第 4Α〜4F圖的製程,結合前文對第2Β〜2F圖的敘述,來達 成繪示於第2Β〜2F圖的其他凸塊結構。以前述實施例中 的敘述為基礎,發明所屬技術領域中具有通常知識者可 順利地形成其所想要的凸塊結構。 第5圖為一剖面示意圖,係顯示一例示的封裝結構, 其包含第2 Α圖所示的凸塊結構。第5與2 Α圖中等效的 元件方面,二者係使用相同的元件符號。 請參考第5圖,一封裝結構500包含基板201,其黏 著於基板50卜具有凸塊結構200的基板201係以覆晶的 方式黏著於包含連接墊結構505的基板501。基板201的 每一個凸塊結構200係連接基板501上對應的連接墊結 構505。基板501可以是例如一印刷電路板(printed circuit board ; PCB)、一矽基板、Π - V族化合物基板、顧示器 0503-Α3251 lTWF/dwwang 19 200812036 基板、或發光二極體(light emitting diode ; LED)而共同標 記為基板501,其中上述顯示器基板例如為液晶顯示器 (liquid crystal display ; LCD)、電漿顯示器、陰極射線管 顯示器、或是電致發光(electro luminescene ; EL)顯示器。 在某些實施例中,連接墊結構505可以使例如與前述的 連接墊結構205相仿。藉由聚合物層210的使用,可在 例如對封裝結構500施以應力測試時、運送時、使用時 等等情況下,缓和作用於凸塊結構200的應力。在某些 實施例中,可將一底膠(underfill;未繪示)形成於基板201 與基板501之間。在其他實施例中,當使用前述的凸塊 結構200即可達成所需的應力缓和的效果時,則不使用 底膠。 雖然本發明已以較佳實施例揭露如上,然其並非用 以限定本發明,任何本發明所屬技術領域中具有通常知 識者,在不脫離本發明之精神和範圍内,當可作些許之 更動與潤飾,因此本發明之保護範圍當視後附之申請專 利範圍所界定者為準。 0503-A3251 lTWF/dwwang 20 200812036 ^ 【圖式簡單說明】 第1圖為一剖面示意圖,係顯示習知的凸塊結構。 第2A〜2F圖為一系列之剖面示意圖,係顯示本發明 較佳實施例之凸塊結構,其係形成於連接墊結構上。 第3圖為一俯視示意圖,係顯示本發明較佳實施例 的一例示的局部佈局圖,其包含一連接墊區與複數個凸 塊結構,上述凸塊結構並未形成於連接墊結構上。 第4A〜4F圖為一系列之剖面示意圖,其係沿著第3 圖的剖面線4F-4F的剖面圖,係顯示用以形成第3圖所 示的一例示的凸塊的製程。 弟5圖為一剖面示意圖’係顯示一例示的封裝結構, 其包含第2A圖所示的凸塊結構。 【主要元件符號說明】 100、201、301、401、501 〜基板; 105〜金屬墊; 225〜導體插銷; 110、200、200B、200C、200D、200E、200F、300、 400〜凸塊結構; 250、270〜導體層; 203、203B、203C、203D〜複合物結構; 205、305、405、505〜連接墊結構; 210、210B、210C、210D、210E、210F、240、260、 260E、206F、410〜聚合物層;402、404〜保護層; 220、220B、220C、220D、230、230B、230C、230D、 230E、230F、330、403、420、420a、430、430a〜含金屬 的層狀物; 500〜封裝結構。 0503-A3251 lTWF/dwwang 21
Claims (1)
- 200812036 十、申請專利範圍: 1.:種凸塊結構,適用於將二基板連接在一起,包含: -複合物結構於—第—基板上,該複合物結構 :少-第-聚合物層與至少一第一含金屬的層狀物;以 1二含金屬的層狀物,至少部分覆蓋該複合物姓 構的上表面,並自該複合物結構的上表面延伸至該第= f::戸表面’其中該第二含金屬的層狀物係薄於該第 一各至屬的層狀物。 2.如申請專利範圍第}項所述之凸塊結 :聚合物層具有梯形、半圓形'正方形、或長二 小3:如申請專利範圍第1項所述之凸塊結構,更包含至 二第於该第一聚合物層内,其中該導體插塞將 该弟一含金屬的層狀物連接至該第一基板。 一 利範圍第1項所述之凸塊結構,其中該第 一 3至屬的層狀物的厚度不大於5〇〇〇Α。 —^如申請專·圍第丨項所述之凸塊結構,更包含一 弟一卿層鄰接該第二含金屬的層狀物的—側壁。 6.如申請專利範圍第1項所述之凸塊結構,苴中: 5亥第一基板包含至少一接合墊結構; ’、 ^妾合錢構係橫向地隔開該複合物結構;以及 表面if:金屬的層狀物係延伸自該複合物結構的上 表面’而與對應的該接合墊結構發生電性連接。 〇50j-Aj25 11 TWF/dwwang 22 200812036 -入八二請專利範圍第1項所述之凸塊結構,其尹該第 :3孟薦的層狀物的上表面的至少一部分係連二 基板的接合墊結構。 ’、 弟一 一含範圍第1項所述之凸塊結構,其中該第 3孟屬的層狀物係於該第一聚合物層上。 :種凸塊結構,適用於將二基板連接在一起,包含 第一聚合物層於一第一基板上; 一一薄的含金屬的層狀物於該第—聚合物層上, 的層狀物至少部分覆蓋該第~聚合物層, 亚^弟聚合物層的上表面延伸至該第一基板;以及 質上薄的含金屬的層狀物上,該導體層實 貝上復1忒潯的含金屬的層狀物的上表面。 10·如ΐ請專利範圍第9項所述之凸塊結構, 第-聚合物層具有梯形、半圓形、正方形、或長;形: 11.如申請專利範圍第9項所述之凸塊結構,更包含 至少一導體插塞於該第一聚合物層内,其中該導體=二 將該薄的含金屬的層狀物連接至該第一基板。 基 12·如申請專利範圍第9項所述之凸塊結構,其中該 薄的含金屬的層狀物的厚度不大於5〇〇〇人。 13·如申請專利範圍第9項所述之凸塊結構,更包含 一第一聚合物層鄰接該薄的含金屬的層狀物的—側辟。 Μ·如申請專利範圍第9項所述之凸塊結構,其中· 该第一基板包含至少一接合塾結構; 0503-Α3251 lTWF/dwwang 23 200812036 〆接5塾結構係橫向地p戸弓上仓^ . 該薄的含金屈的思 開5亥稷合物結構,·以及 # s 、㊁狀物係延伸自該複合物結構的上 表面而與對應的該接合塾結構發生電性連接。冓的上 導2 ψ,專利第9項所述之凸塊結構,其中竽 ν體層為-含金屬的層狀物,其厚度為5〇〜6〇卿。、中。亥 -第範圍第9項所述之凸塊結構,更包含 間弟一物層於該薄的含金屬的層狀物與該導體層之 .17·如申請專·圍第9項所述之凸塊結構, :體層的至少一部分上表面係黏著的: 連接墊結構。 土攸曰〕昂一 18·—種封裝結構,包含: 衩數個凸塊結構,各該凸塊結構包含·· 一複合物結構於-第—基板上,該複合物結構包含 至少-第-聚合物層與至少一第一含金屬的層狀物; 一第二含金屬的層狀物,至少部分覆蓋該複合物結 構的上表面,並自該複合物結構的上表面延伸至該第一 基板的一表面,其中該第二含金屬的層狀物係薄於該第 一含金屬的層狀物;以及 複數個第一接合墊結構於一第二基板上,其中該些 凸塊結構中的至少一部分係黏著於該第二基板上的對應 的第一接合墊結構。 19·如申請專利範圍第18項所述之封裝結構,更包含 至少一導體插塞於該第一聚合物層内,其中該導體插塞 0503-A3251 lTWF/dwwang 24 200812036 將該薄的含金屬的層狀物連接至該第一基板。 …如申請專利範㈣18項所述之㈣結構,其令該 弟一 3金屬的層狀物的厚度不大於5〇〇〇人。 如申請專利範圍第18項所述之封裝結構,其中: 該,一基板包含至少一第二接合墊結構; °亥第一接合墊結構係橫向地隔開該複合物結 及 /第一3孟屬的層狀物係延伸自該複合物結構的上 表面’而與對應的該第二接合墊結構發生電性連接。 μ 22·如申請專利範圍帛18項所述之封裝結構, 第-含金屬的層狀物係於該第一聚合物層上。 " 0503-Α32511 TWF/dwwang 25
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US5578527A (en) * | 1995-06-23 | 1996-11-26 | Industrial Technology Research Institute | Connection construction and method of manufacturing the same |
US6064120A (en) * | 1997-08-21 | 2000-05-16 | Micron Technology, Inc. | Apparatus and method for face-to-face connection of a die face to a substrate with polymer electrodes |
US6767819B2 (en) * | 2001-09-12 | 2004-07-27 | Dow Corning Corporation | Apparatus with compliant electrical terminals, and methods for forming same |
US7160756B2 (en) * | 2004-10-12 | 2007-01-09 | Agency For Science, Techology And Research | Polymer encapsulated dicing lane (PEDL) technology for Cu/low/ultra-low k devices |
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