TW200811946A - Methods of removing extraneous amounts of molding material from a substrate - Google Patents

Abstract

Methods for removing thin layers of extraneous multi-component molding material from one or more areas on a substrate. The methods include exposing the substrate to a plasma effective to remove a non-particulate component of the molding material from each area. The methods further include exposing the substrate to a non-plasma process effective to remove a particulate component of the molding material from the area.

Description

200811946 IX. Description of the invention: 'and more specifically, the treatment of a thin layer of a molded material with a component. [Technical Field of the Invention] The large system of the present invention relates to the removal of plasma treatment from a region on a substrate. Extra multi-method 0 [Prior Art] Surface properties of substrates used in applications related to integrated circuits, electrical packages, and jKi] boards are typically modified by plasma processing. Electropolymerization is used in electronic packages (eg, ) to increase surface activation and: or surface cleanliness, to eliminate delamination and bonding failure, a " degree, read-and-preserve film on the board without voids underfill, remove oxide: enhance grain Adhesion and improvement for adhesion of the die package. Typically - or a plurality of substrates are placed in the plasma processing system and at least one surface of each of the sheets is exposed to electropolymerization. The outermost atomic layer is removed from the surface by physical quenching, chemical reactions promoted by chemically assisted reactive electropolymers, and such mechanisms. Physical or chemical effects can also be used to condition the surface to improve adhesion properties such as adhesion or cleaning from the substrate surface. During semiconductor manufacturing, wires are typically bonded by wires (such as leadframes). Wireframe = : includes ° + multi-pad 'each' has an exposed lead for the mono-semiconductor die virtual circuit, electric (four). - semiconductor die attach to each pad and externally The contact point and the vicinity of the lead wire are wire-bonded. 12J151.doc 200811946 The body die and its wire bond are packaged in a packaged polymer body, and the molded polymer body's semiconductor die And the wire bonding is not affected by the processing, storage and processing of the m during the storage and manufacturing process. The influence of the grain environment 以及 and the dissipation during the operation from the semiconductor material is filled right. Multi-component molding

In the "key-emulsified enamel or enamel particles or particles of epoxy resin matrix. During the U process, the lead frame and the plurality of attached semiconductor crystal plates are two: between the two mold halves. The half mold includes a plurality of cavities, a body granule and defines a package shape to attempt to seal the inlet to the cavity. It is injected into the underside: two internal open spaces for encapsulating the semiconducting:丨 line L, the molding material can ooze out from the cavity between the mold halves and be = thin layer or flash (f 1 ash). This thin material has a thickness of 10 micrometers. A only ten /, there is less than about the installation of semi-conducting ^ θ ',,,,,, because it may affect the ability to manufacture and seal the high-quality electrical connection of the body grain. During the molding process, can come Preventing the overflow from being obscured by covering the back side of the lead frame with V to prevent spillage. However, after the tape is removed, the tape is transferred from the f to the back of the lead frame to be relatively voicing. In addition, the removal of this application will incur the need to force / increase the manufacturing cost, and the tape application and cost, and reduce the process yield. After pulling the skirt, you can bury the material. These removal methods learn that the lead frame is susceptible to defects from the machine: For example, the damage. The chemical process can be: two shifts: technology (editing ..., efficiency, unless the use of high-corrosion chemistry 12115).doc 200811946 products, this potentially caused the problem of the processing of the material 6 processing. The waste lead frame of the rotted chemical. The eve is expensive and leaves residual carbon residue in the process. Therefore, it is necessary to effectively move from the substrate for at least these reasons, except for the additional molding material. Processing [Invention] The embodiment of the present invention solves

Linkage issues. To this end, and the legs, he and the conventional flash removal process wood from one of the embodiments of the present invention, provide - (d), the area on the soil material removal mold f abundance $ + + + one ancient # ^ 犋The method of ι material shaking. Exposing the substrate 5 will substantially remove the non-particulate component of the molding material from the fly. In addition, the non-plasma of the particulate component of the substrate is used to remove the molded material from the region. In the case of the Moonlight, the non-plasma process further includes the blaster in the area of the scrubbing material, which is taken from the microparticle component of the (4) domain material molding material. In another example of the present invention, the non-plasma process further includes placing the (four) material in the region of the substrate into a particulate component effective for removing the molding material from the region. Clean liquid phase contact. These and other advantages of the present invention will become more apparent from the drawings and description. [Embodiment] Referring to Figure 1, a plasma processing system 10 includes a processing chamber 12 formed by a wall enclosing a processing space 14. During the plasma processing, the processing chamber 12 is intended to be sealed from the surrounding environment. The processing chamber 2 includes an access opening (not shown) configured to transfer the substrate 2 to the processing space I21I51.doc 200811946 14 and transfer the substrate 2 from the processing space 14. As recognized by those of ordinary skill in the art of vacuum technology, the vacuum pump 16 for evacuating the processing space 14 of the processing chamber 12 can include one or more vacuum pumps having a controllable pumping speed. The process gas is permitted to enter the process space 14 from the process gas source 18 via the inlet end defined in the process chamber 12 at a predetermined flow rate. The flow of process gas from process gas source 丨8 to process = room 14 is typically measured by a mass flow controller (not shown). The flow rate of the gas from the process gas source and the pumping rate of the vacuum pump 16 are adjusted to provide a process pressure and a pH suitable for plasma generation. As the process gas is introduced from the process gas source 18, the process space 4 is continuously pumped so that fresh gas is continuously exchanged in the process space 1* when plasma is present. The power source 22 is electrically coupled to the electrode pedestal 24 inside the processing chamber 12 and transfers electrical power to the electrode pedestal 24. In the exemplary processing system 1 该, the electrode pedestal 24 supports the substrate 20. The power transferred from the power source 22 is effective to self-process the process gas limited within the two spaces 14 to form a plasma % adjacent to the substrate 2, and also to control direct current (DC) self-bias. Although the invention is not so limited, the power source 22 can be at a frequency between about 40 kHz and about 13.5 ό MHz (preferably about 13.56 MHz) (although other frequencies can be used) and, for example, 4 kHz. RF power (R^ power supply) between about 4,000 watts and about 8 watts or about 3.65% of the power of 3 watts to 2,500 watts. However, those who are familiar with the technology should understand Different processing chamber designs allow for different bias powers. A controller (not shown) is connected to the plasma processing system, charging various components to help control the process of the engraving process. The vertical processing system 1G can take the same understanding as the one skilled in the art. I21151.doc 200811946 π group evil, and therefore, the plasma is configured. For example, it can be two or two! Example 26 and pass it there: & to the end of the 12 to produce the plasma king 14 to power the slurry treatment substrate 2 。. Further understanding of the plasma processing system 1 〇 including the operation · necessary The condition of the mouth, ^ mouth of the 糸 between the 10 (four). ~ in the processing space 14 with the vacuum pump 1 6

Sound =. The processing space (4) located in the processing chamber 12 is suitable for electrical polymerization. The present invention: a plurality of substrates 2G can be positioned in the processing chamber by a single-treatment process to process the electricity table 26 provided in the space 14 for simultaneous processing. The plasma treatment of the base (4) is effectively removed and placed on the base. Material (4) material tearing, flashing) thin layer. During the previous manufacturing stage, you can hunt the molding process to produce peak Luo #, #, generate overflow 枓 reclamation area. For example, 'this extra:: area can Residing on the electrical contacts of the semiconductor die inside the molded polymer package. Common molding materials are organic substrates (such as = compound or epoxy) and inorganic fillers (such as dioxide dioxide particles, It is dispersed in the matrix for modifying the properties of the organic matrix. The composition of the composite 0 is treated by plasma treatment of the substrate 20 based on the organic matrix constituting the molding material and the inorganic _ selectivity and engraving rate in the equivalent plasma. Under conditions, no::)) Two P white stage processes. Two different process stages will be used to accelerate, ,, λ'' spurs because the first stage is adapted to be selective with respect to inorganic fillers = effect shift In addition to the organic matrix, and the first stage is adapted to the phase Effective to selectively remove the organic matrix .- inorganic filler for providing a gas mixture of these two methods I21153.doc 200811946 electric water phase of the group of people based change process was used to form 0

In the first stage of the process, the substrate 2 in the processing space 14 is exposed to a substance including an ammonia-containing gas (for example, carbon tetrafluoride, tribasic nitrogen or antimony fluoride) and a reduced substance. A plasma 26 formed by an oxygen-rich = body conjugate such as oxygen (?2). Although not wishing to be bound by theory, it is believed that the active material from the oxygen of the plasma 26 (e.g., free radicals and off-axis pairs are more effective for removing the substrate paper from the area covered by the thin layer of molding material) In the organic matrix, similarly, the active material of fluorine originating from the plasma 26 is relatively more suitable for removing the inorganic filler of the molding material. By forming the plasma 26 from the oxygen-rich gas mixture, The etching rate of the organic matrix is greater than the rate of inorganic filling. In other words, the organic matrix is selectively removed relative to the inorganic filler. The volume of the oxygen-containing gas species in the gas mixture of the second-stage private white b-segment described above. The concentration is greater than the volume concentration of the fluorine-containing gas substance. As a result, the gas mixture in the first stage includes a concentration of the oxygen-containing gas substance in a concentration of more than 50 volume percent. The fluorine-containing gas substance usually contains the remaining gas mixture 'but Desirably, other gaseous substances such as an inert gas may be added to the gas mixture as long as the oxygen-containing gas substance has a concentration greater than the concentration of the fluorine-containing substance. Degassing of the chamber assembly also causes partial pressure to assist in processing a portion of the vacuum in chamber 12 (4). The gas mixture most suitable for use in the first process stage includes from about 7 〇v 〇 % to about 9 〇 V 〇 % Oxygen to material I. It has been found that the gas mixture which is particularly suitable for this initial process stage of the process is 80 v〇l% of the oxygen-containing gas substance and 2% ν%% of the 121I5I.doc 200811946 fluorine gas substance. The active material in the plasma of the stage is effectively removed from the active material of the substrate 20 by the thin matrix of the molding material; the organic matrix in the area covered by the layer of ruthenium. In addition to the inorganic fillers in the area of the temple, but due to the relatively low etch rate of the group of the seventh to tenth of the molding material, the formula of the first stage is relative to the helmet. The inorganic filler is removed. The result 'space in the self-filling agent' is to remove the organic matrix residual inorganic filler substantially or partially _ holding over the substrate 20 by the previous coating, the product or the local month Expected · because the second stage also removes the organic matrix (although significant The low etch rate is fascinating. Therefore, during the first stage of the process, the organic matrix does not have to be removed by 70, and can be partially removed by the second stage. , Tian..., Feng ^ spear eve, can iterate the two process stages (if needed). In the second process stage of the process, 'subject space> in the processing space> to the self-contained The substance (for example, carbon tetrafluoride, tri-nitrogen gas or hexa-sulfurized sulfur) is mixed with a gas-rich gas of an oxygen-containing gas substance (such as oxygen (〇2)), and the electricity is compared with the first stage of the process. The plasma 26 formed by the gas mixture thus has an inorganic filler relative to the organic matrix: an elevated etch rate. Typically, 'without breaking the vacuum, and preferably without extinguishing the processing chamber Under the fine condition of the internal plasma 26, the change of the gas mixture is completed. This second gas mixture may comprise two gaseous species that are identical to the first-P white # but mixed in different relative proportions. Through the suspension, the volume concentration of the oxygen-containing gas substance in the mixture of the corpus callosum is smaller than that of the fluorine-containing gas substance: the product of the engulf ^ ^ ^ u / the length.吊吊,二二 (3⁄4 paragraph gas mixture includes I2I151.doc -12- 200811946 less than 50 vol% of oxygen-containing gas substances, and the remaining mixture contains gas containing gas. However, as long as the oxygen-containing gas substance has less than fluorine-containing substances The concentration of the concentration may intentionally add other gaseous species such as an inert gas to the gas mixture. The gas mixture most suitable for use in the second process stage contains from about 70 vol% to about 90 V〇% of the fluorine-containing gas species. The gas mixture which was found to be particularly suitable for this stage of the process was 2 〇v 〇 1% of an oxygen-containing gas substance and 80 vol% of a fluorine-containing gas substance.

The active material in the production of the fluorine-rich gas mixture from the latter stage of the process is more effective than the active material in the plasma 26 produced from the first stage of the process. . As a result, the entire process required to remove the flash from the affected area of the substrate is compared to a one-stage process using only a gas mixture having a higher rate of the component-only material. Time is reduced. This overall reduction in process time contributed by the two-stage process of the present invention significantly increases system throughput. 8. During the plasma treatment, the portion of the substrate 2 that is susceptible to damage by the plasma may be covered to prevent or significantly reduce the exposure of the electrical device. The storm at each stage will depend on the electric disk #, the set ^ m 1 force rate, the characteristics of the processing chamber 12, and the characteristics of the flash. The etching rate and process uniformity will depend on the plasma parameters, b Including (in addition to) input power, system pressure and processing time. The various defects of the Ukrain removal technology are removed by means of H 4, the accidental material, the chemical (4) technology, the mechanical (4) or the H-moon. ^ The required molding is used to remove the non-swarf layer or cover the electrical contact points of the lead frame. 121151.doc -13- 200811946 Layer. These thin layers are produced by a molding process that encapsulates the die carried by the lead frames inside the respective packages of molded materials.

The substrate 20 is positioned at a location suitable for plasma processing in the processing space 14 inside the processing chamber 12 when in use and with reference to Figure 1 '. Next, the processing space 14 is evacuated by the vacuum pump 16. During the two process stages, the process gas stream 18 introduces a process gas stream to raise a portion of the process chamber η to a suitable operating pressure, typically from about 150 mT rr to about 25 m mon. Within the range, and preferably in the range of about 8 ', is used to provide enhanced reverberation speed while actively evacuating the processing space 14 with vacuum (d). The power source 22 is energized for supplying electrical power to the electrode pedestal 24, which produces a plasma 26 adjacent to the substrate in the processing space 14, and is self-biased by rDC to the electrode pedestal 24. Exposure of substrate 20 to the plasma in a two-stage process continues for a sufficient period of exposure time (4) for excess molding material in the form of flash to be removed from the area on substrate 20. Specifically, the first electricity generated by the substrate being exposed to the oxygen-rich gas mixture from the oxygen-containing gas species and the fluorine-containing gas species continues for a period of time sufficient to substantially remove the organic radical f of the flash. During this first phase of removal of the non-particulate component of the molding material, the organic substrate has a higher engraving rate than the inorganic filler. Next, the base = 2 暴露 is exposed to a second plasma produced from the fluorine-containing gas mixture of the oxygen-containing gas species and the fluorine-containing gas species for a duration sufficient to substantially remove the inorganic filler of the flash. During this second stage of removing the particulate component of the molding material, the etch rate of the inorganic filler is greater than the etch rate of the organic substrate. 121I51.doc -14· 200811946 ~ The substrate 20 is exposed to the first and second electricity (four) without removing the substrate 20 from the processing chamber 12 (i.e., when the process gas mixture changes, the plasma is not extinguished). Preferably, substrate 20 is maintained in the same-processing position during both stages of the processing process. The two process stages can be iterated or repeated as needed to complete the flash removal, which can depend on the flash thickness. After the second stage of the process is completed, the plasma _ Λ % is extinguished. However, after the power is turned off or after, there may be an external plasma processing step that is beneficial to the removal of the flash. Referring to Figure 2 and in an alternative embodiment of the present invention, the second plasma-based process stage of the process can be performed by a non-plasma process (such as chemical process, mechanical process, or chemical and mechanical process). Replacement of the weapon I private). The particles 28 (i.e., the particulate component of the molding material) composed of the helmet filler are held on one of the bases (4) after the end of the organic removal of the organic substrate in the first stage. After removal of the organic matrix, the particles and the mechanical process can be readily accessed for removal by chemical and/or mechanical processes. By removing the substrate 20 to the cleaning station, the particles can be substantially removed.

Sub 28. Advantageously, substantially all of the particles 28 8 ' from the molding material can be privately removed in the cleaning A u , the mouth so as not to introduce a significant defect density to the surface of the substrate on the substrate. Under the surface of the substrate, the area where the female fork is substantially free of particles 28 is provided. The substrate region of the clear beta may comprise one of the entire base surface or the total surface area. After the first process of the process, #, , ,,,, the residual of the organic matrix remains adhered to the particles 28, ^ ^ mouth, the hunting is removed by the non-plasma process 0 / month > 0 may include a scrubber consisting of a _ or a guest-night brush, the 121151.doc 200811946 or the brush shoe ώ ι brushing process to at least partially remove the core from the substrate 2: soil 2〇 It is held in the cleaning station 30 so that the surface of the carrier particles 28 is not blocked. This provides access for cleaning. Each brush of the scrubber has a bristles typically formed of a polymer, such as polyvinyl acetate (PVA), which contacts the surface of the carrier particle (10) of the substrate 2G and sweeps the particles μ from the surface. The pressure applied by the brush bristles to the substrate 20 is sufficiently low that the substrate 2 is not damaged by the similar behavior caused by the brushing action. However, the bristles and the 2G of the soil should be sufficient to increase the particles and the brush to a point where the associated adhesion can be overcome. The μ brush can be, for example, a power-driven cylindrical brush having a set of hairs that protrude from the upward direction of the brushed surface. The substrate 20 can be transported between such cylindrical brushes such that the brushing action is bilateral, or the bristles can only contact the side of the substrate 2G. Alternatively, the brush may be a rotating lining having a substantially parallel array of bristles that are either one or both sides of the substrate and present a flat brushed surface. If one side of the substrate 2 does not require brushing, the brushing action can be limited to the side of the substrate 2 that is contaminated by the particles 28. By increasing the suction or suction of the pines 28, the brush-action brush can also be configured to transfer the flow of cleaning liquid to the substrate for fluid-assisted removal of the loose particles 28. Heat can also be used to add to or promote particle removal. The present invention contemplates the ability to eliminate other types of construction of particles 28 from substrate 20. Tiancao Road to π溧. In the case of a 30° environment, the substrate 2〇 may be supported by a tray or a jig (not shown). U.S. Application Serial No. 11/3, No. 62, which is incorporated herein by reference, discloses the use of the particles for the cleaning station 30, which is suitable for use in the plasma treatment process of the treatment system 10 and subsequently adapted to 121151 .doc -16 - 200811946 σ During the removal of the fixture, the application is in the form of a full-text reference to vibrate people ^ i ^ 1 juice into this article. Alternatively, different fixtures can be used in the plasma processing system first and in the smart table 30. The substrate 20 can be transported from the processing chamber 12 and introduced into the cleaning station 30 when residing on the fixture. At least one of the particles 2S for removing particles 2S from the substrate 20 may be used in the cleaning station 30 independent of the liquid cleaning agent and independent of other drying processes. In an alternative embodiment of the drying process of the present specification, the cleaning station 30 may be one or more high pressure air jets that direct the air impinging on the substrate 20 to flow the octopus "! L. The impact of the air stream with the substrate 20 causes the particles 28 to be removed. . . In an alternative embodiment, the cleaning station 30 can include a laser, which is capable of cutting the particles 28 with a beam of radiation having a wavelength suitable for vaporizing the particles 28. The face, γ / , directs the reactive gas of the mouse to the area around the beam / 乂 contributes to the chemical reaction between the laser radiation and the particles 28. In an alternative embodiment of the drying process, the cleaning station 3 includes an infrared heating device that removes residual particles of the inorganic filler by tuning the frequency of the infrared radiation to match the vibration frequency of the constituent materials of the particles. The heating device selectively heats the particles 28 relative to the substrate 20. In this way, = 28 is heated to a vaporization temperature for removal as a volatile material. In an alternative embodiment of the drying process, the 'cleaning station 3' may include a c〇2 or 虱 low-temperature spraying device that is moved by the physical force involved in the transfer of the material to the particle 28 Except particle 28. ^ The right particle 28 is charged, and in another alternative embodiment, the sigma 30 may include a means for effectively removing or twirling the electrostatic charge on the particle 28. The attraction of the sub-mail substrate 2 作用 acts to promote the particle (28). 121151.doc -17- 200811946 In a re-drying alternative embodiment towel, the cleaning station 30 can remove the vacuum or suction of the particles 28. Removing the particles 2_8 by means of a removal technique that relies on the liquid agent used to perform surface cleaning, which is free of residual particles 28 of the filler, and is an alternative implementation of the present invention. In an example, the cleaning station 30 can include a family head that sprays a cleaning liquid onto the substrate 20. The jetting may be performed by each of the emitted cleaning liquids to impinge on the substrate 2() or a plurality of individual nozzles. The water may be water, preferably deionized or ultrapure, and may contain 2 dissolved additives. , such as a surfactant, which prevents the crucible in the particle: "After the particle 28 is reattached or re-deposited on the substrate 2. The ml can also contain an acidic aqueous solution" such as buffered hydrofluoric acid (10) white ~ Bu cleaning liquid wets the substrate 2G 'and when the cleaning liquid flows through the substrate, the cleaning material 2G row " 'the cleaning liquid migrates from the surface of the substrate 20 or at least a part of the L movement. By rotating the substrate 20, the inside of the cleaning liquid cleaning station 30 can be promoted... or "collected," and used to take care of the particles to remove the particles (catch ηΓ 'to make recyclable The residual cleaning liquid on the m-base (four) may be dried by air or by a dryer, and may include rotation to promote liquid return,,,, drying process to move: :IV ΐ or acoustic pressure wave Applying to the cleaning fluid from the coffin or acoustic sensor associated with the cleaning station 30 can increase the cleaning effect of the liquid being sprayed on the "only 0. The transmission is selected or not focused for wide use. Domain Transfer. Acoustic Dust: Particle adhesion to promote the removal of particles 28 and may cause the 121J51.doc 200811946 particles 28 to be pushed away from the substrate 2 to reduce or prevent re-attachment. The surface has a protruding configuration, and the application of the acoustic Lily wave to the cleaning liquid may particularly enhance the particle removal. The acoustic force wave can be in the range of the chopping frequency of the gate from about 20 kHz to about 4 kHz. Or the ultra-high frequency sound frequency range between about 35 〇 and 顚 顚In an alternative embodiment of the present invention, the cleaning station 30 may include a sump filled with a cleaning liquid bath. (d) (d) immersed in the bath towel to remove at least particles from the area of the substrate. - a significant portion of the continuous continuation of the situation, and in turn, can rotate, oscillate or otherwise move the substrate 2 in the bath to further promote particle cleaning. The substrate can be partially absent in the bath or Completely immersed in the bath to clean the particles 28. The removed particles 28 can be suspended in the bath or can accumulate in a portion of the sump. The effectiveness of the cleaning will depend on the temperature and chemistry of the cleaning solution and the immersion time. The stage 30 can further include an acoustic or sonic sensor in communication with the bath for performing non-contact cleaning. After immersing the substrate 2 in the bath cleaning solution, the substrate 20 is exposed to high frequency acoustics from the sensor. The pressure wave is sufficient to promote the cleaning between % by removing at least a portion of the particles 28 from the substrate 20. The acoustic pressure wave propagates from the sensor through the sensor through the transfer medium bounded by the cleaning liquid to the carrier particle Substrate 2 of the substrate 28. Acoustic pressure waves will transfer to the substrate 20 and residual inorganic filler particles 28, which can be used to clean and remove residual particles of the inorganic filler 28 from the substrate 20. Selection of sensor operation The frequency (and therefore the frequency of the acoustic wave) to promote efficient agitation and particle removal. Acoustic pressure waves can be in the ultrasonic frequency range between about 2 kHz to about 400 kHz or at about 35 kHz and 1 Ultra-high between MHz 121151.doc 19 200811946 In the frequency range of the frequency wave. Suitable sensors include, but are not limited to, piezoelectric devices: the effectiveness of cleaning can depend on the strength of the force wave, the temperature and chemical properties of the cleaning fluid, Cleaning time, and substrate orientation. In another alternative embodiment of the invention, the cleaning station 30 can include a dredging wire that is carried as a liquid detergent in the form of a slurry to effectively remove the particles 28. The dip material may comprise: a liquid chemical carrier that chemically interacts with the particles 28; and the abrasive particles carried in the chemical carrier... • The grinding mechanism cooperates with the substrate 2〇 for movement Residual particles 28 other than the inorganic green filler material. The slurry component is selected and controlled to preferentially remove residual particles 28 of the inorganic filler material as the minimum amount of material is removed from the surface of the substrate 20. " These non-electropolymerization techniques for removing residual particles of inorganically filled riders can have the benefit of reducing the overall processing time of all flash removal. As a result, process throughput can be improved. Further details and embodiments of the invention are described in the following examples. • Example According to the present invention, many molded packages are handled in a two-stage plasma process and are in? An observable flash (4) wire frame on the electric 5 丨 line of the 丨 line frame ^ is filled with the molding material for the package: oxygen-cut epoxy tree. The first-process stage uses a gas mixture of CF4 (80 sccm) and 〇2 (32 〇 sccm) (measured according to the flow rate into the paddle chamber) to form a plasma when the chamber dust is called mT. The lead frame is exposed to the electropolymer for about five (5) minutes. The electrical power is about 5 watts at an operating frequency of 13 56 MHz. When the lead frame was inspected, it was observed that the first stage was effective 121151.doc -20-200811946 to remove the epoxy in the thin area. In the case of moving the yoke resin, a sputum filler is held on the lead frame as a residue. In the case where the seven-lead lead frame is still inside the processing chamber and is not extinguished, the gas mixture is converted to conform to the first stage of the processing process. Take the buddhist, # η, the second phase of the 甩 CF4 (240 sccm) and / (10)) gas mixture, which is again produced _ town. The chamber of the house. The leadframe is exposed to this plasma for approximately five (5) minutes. Electricity, power is (10) q watts at the operating frequency. After the == of the treatment, the silica dioxide cermet filler was removed and it was observed that the lead frame was substantially free of flash. The present invention has been described by way of a description of various embodiments, and although the embodiments have been described in considerable detail, the application is not intended to limit the scope of the appended claims. The scope of the additional patent application is limited to this detail. Those skilled in the art will readily appreciate the additional advantages and modifications. Therefore, the invention in its broader aspects is not limited to the specific details, the representative device and method, and the illustrative examples shown and described. Therefore, deviations may be made from such details without departing from the spirit or the generality of the applicant's general inventiveness. The scope of the invention should be defined solely by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a plasma processing system for an electric paddle treating substrate according to the present invention. Figure 2 is a diagram of a cleaning station for use with the electrical defeat processing system of the accompanying drawings in accordance with an alternative embodiment of the present invention. 121151.doc -21 - 200811946 [Description of main components] 10 Plasma processing system 12 Treatment chamber 14 Processing space 16 Vacuum pump 18 Gas source 20 Substrate 22 Power supply 24 Electrode pedestal 26 Plasma 28 Particle 30 Cleaning station 121I51.doc -twenty two-

Claims (1)

200811946 X. Patent Application Range: 1 . A method for removing a molding material having a particulate component and a non-particulate component from a region on a substrate, the method comprising: Roadway to a plasma effective to remove the molded non-particulate component from the region; and exposing the substrate to - effectively removing the particulate component remaining from the molding material from the region Plasma process. The method of claim 1, wherein the exposing the substrate to the non-plasma process comprises: J. the molding material in the region is in contact with a cleaning fluid effective to remove the particulate component from the region. 3. According to the method of claim 2, the smashing &gt; Μ , , the main-medium contact area of the molding material in contact with the / month / sputum further comprises: The cleaning liquid is supplied to enhance removal of the particulate component from the area. 4. The method of claim 2, wherein the contacting of the molding material (four) cleaning liquid in the region comprises: ^ producing a material when the molding material comes into contact with the cleaning liquid. The method of claim 2, wherein the method of claim 2, wherein the region is in contact with the cleaning liquid, comprises: molding the material in the middle side and the molding material in the region Contact with deionized water. 6. The method of claim 2, wherein contacting the zone cleaning liquid into the step comprises: "the molding material and the 121151.doc 200811946 at least partially immersing the substrate in the cleaning liquid - the cleaning liquid To wet the area. The method of claim 2, wherein the contacting the cleaning liquid in the area comprises: molding the material and immersing the substrate in one of the cleaning liquids 8. 8. The method of claim 2, wherein the cleaning material in the (four) domain is sprayed with the cleaning material to spray the molding material in the region. I Sr method 'where the region is made The contacting of the molding material with the moon liquid further comprises: flowing the cleaning liquid through the molding material in the region. The method of claim 1, wherein the plasma process of the substrate comprises: Sub-storming to the non-partially brushing the molding material in the area to remove the particle group from the area. 11. The method of claim 1, wherein the plasma process comprises: exposing the domain to the non-two or more a high-dust air jet impacts the molding material in the area, The region removes the particulate component. The method of claim 1 wherein the plasma process of the substrate comprises: • a violent path to the non-: a radiation beam from one of the lasers is directed to the substrate The material in the region of the material is used to vaporize the particulate component. 13. The method of claim 12, further comprising: 12II51.doc 200811946 supplying a reactive gas to the region to promote the radiation beam A chemical reaction between the particulate components. The method of claim 1, wherein exposing the region of the substrate to the non-plasma shoe comprises: directing infrared radiation to the molding material in the region Promoting heating of the particulate component. 15. The method of claim 1, wherein exposing the region of the substrate to the non-plasma process comprises: directing a cryogenic fluid to the mold in the region of the substrate The method of claim </ RTI> wherein the exposing the region of the substrate to the non-plasma process comprises: removing or reversing the electrostatic charge on the particulate component of the region. The method of item 1, which Exposing the region of the substrate to the non-plasma process comprises: subjecting the molding material in the region to a polishing pad effective to remove the particulate component from the region and transporting the polishing pad One of the blades is in contact. 121151.doc