TW200802865A - RF power transistor device with metal electromigration design and method thereof - Google Patents

RF power transistor device with metal electromigration design and method thereof

Info

Publication number
TW200802865A
TW200802865A TW96107305A TW96107305A TW200802865A TW 200802865 A TW200802865 A TW 200802865A TW 96107305 A TW96107305 A TW 96107305A TW 96107305 A TW96107305 A TW 96107305A TW 200802865 A TW200802865 A TW 200802865A
Authority
TW
Taiwan
Prior art keywords
metal
power transistor
transistor device
design
drain
Prior art date
Application number
TW96107305A
Other languages
Chinese (zh)
Other versions
TWI455306B (en
Inventor
Christopher P Dragon
Wayne R Burger
Robert A Pryor
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200802865A publication Critical patent/TW200802865A/en
Application granted granted Critical
Publication of TWI455306B publication Critical patent/TWI455306B/en

Links

Abstract

An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.
TW096107305A 2006-03-02 2007-03-02 Rf power transistor device with metal electromigration design and method thereof TWI455306B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77826906P 2006-03-02 2006-03-02

Publications (2)

Publication Number Publication Date
TW200802865A true TW200802865A (en) 2008-01-01
TWI455306B TWI455306B (en) 2014-10-01

Family

ID=44765496

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107305A TWI455306B (en) 2006-03-02 2007-03-02 Rf power transistor device with metal electromigration design and method thereof

Country Status (1)

Country Link
TW (1) TWI455306B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321328A (en) * 1994-05-27 1995-12-08 Hitachi Ltd Thin film transistor drive liquid display unit and its manufacturing method
JP3500308B2 (en) * 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション Integrated circuit
US6043153A (en) * 1997-09-25 2000-03-28 Advanced Micro Devices, Inc. Method for reducing electromigration in a copper interconnect
SE520119C2 (en) * 1998-10-13 2003-05-27 Ericsson Telefon Ab L M Method and Device for Interconnecting Radio Frequency SiC Field Power Transistors for High Power Applications
DE10310554B4 (en) * 2003-03-11 2007-10-04 Infineon Technologies Ag Field effect transistor and amplifier circuit with the field effect transistor

Also Published As

Publication number Publication date
TWI455306B (en) 2014-10-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees