TW200802865A - RF power transistor device with metal electromigration design and method thereof - Google Patents
RF power transistor device with metal electromigration design and method thereofInfo
- Publication number
- TW200802865A TW200802865A TW96107305A TW96107305A TW200802865A TW 200802865 A TW200802865 A TW 200802865A TW 96107305 A TW96107305 A TW 96107305A TW 96107305 A TW96107305 A TW 96107305A TW 200802865 A TW200802865 A TW 200802865A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- power transistor
- transistor device
- design
- drain
- Prior art date
Links
Abstract
An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77826906P | 2006-03-02 | 2006-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802865A true TW200802865A (en) | 2008-01-01 |
TWI455306B TWI455306B (en) | 2014-10-01 |
Family
ID=44765496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096107305A TWI455306B (en) | 2006-03-02 | 2007-03-02 | Rf power transistor device with metal electromigration design and method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI455306B (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07321328A (en) * | 1994-05-27 | 1995-12-08 | Hitachi Ltd | Thin film transistor drive liquid display unit and its manufacturing method |
JP3500308B2 (en) * | 1997-08-13 | 2004-02-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Integrated circuit |
US6043153A (en) * | 1997-09-25 | 2000-03-28 | Advanced Micro Devices, Inc. | Method for reducing electromigration in a copper interconnect |
SE520119C2 (en) * | 1998-10-13 | 2003-05-27 | Ericsson Telefon Ab L M | Method and Device for Interconnecting Radio Frequency SiC Field Power Transistors for High Power Applications |
DE10310554B4 (en) * | 2003-03-11 | 2007-10-04 | Infineon Technologies Ag | Field effect transistor and amplifier circuit with the field effect transistor |
-
2007
- 2007-03-02 TW TW096107305A patent/TWI455306B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI455306B (en) | 2014-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |