TW200802699A - Method for fabricating single-damascene structure, dual damascene structure, and opening thereof - Google Patents

Method for fabricating single-damascene structure, dual damascene structure, and opening thereof

Info

Publication number
TW200802699A
TW200802699A TW95123486A TW95123486A TW200802699A TW 200802699 A TW200802699 A TW 200802699A TW 95123486 A TW95123486 A TW 95123486A TW 95123486 A TW95123486 A TW 95123486A TW 200802699 A TW200802699 A TW 200802699A
Authority
TW
Taiwan
Prior art keywords
layer
damascene structure
opening
silicon oxynitride
hard mask
Prior art date
Application number
TW95123486A
Other languages
English (en)
Other versions
TWI305030B (en
Inventor
Ming-Hsing Liu
Chia-Hsiun Yu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95123486A priority Critical patent/TWI305030B/zh
Publication of TW200802699A publication Critical patent/TW200802699A/zh
Application granted granted Critical
Publication of TWI305030B publication Critical patent/TWI305030B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW95123486A 2006-06-29 2006-06-29 Method for fabricating single-damascene structure, dual damascene structure, and opening thereof TWI305030B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95123486A TWI305030B (en) 2006-06-29 2006-06-29 Method for fabricating single-damascene structure, dual damascene structure, and opening thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95123486A TWI305030B (en) 2006-06-29 2006-06-29 Method for fabricating single-damascene structure, dual damascene structure, and opening thereof

Publications (2)

Publication Number Publication Date
TW200802699A true TW200802699A (en) 2008-01-01
TWI305030B TWI305030B (en) 2009-01-01

Family

ID=44765468

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95123486A TWI305030B (en) 2006-06-29 2006-06-29 Method for fabricating single-damascene structure, dual damascene structure, and opening thereof

Country Status (1)

Country Link
TW (1) TWI305030B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689022B (zh) * 2019-01-25 2020-03-21 大陸商長江存儲科技有限責任公司 在半導體裝置中形成孔結構的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689022B (zh) * 2019-01-25 2020-03-21 大陸商長江存儲科技有限責任公司 在半導體裝置中形成孔結構的方法
US11817348B2 (en) 2019-01-25 2023-11-14 Yangtze Memory Technologies Co., Ltd. Methods for forming hole structure in semiconductor device
US11876016B2 (en) 2019-01-25 2024-01-16 Yangtze Memory Technologies Co., Ltd. Methods for forming hole structure in semiconductor device

Also Published As

Publication number Publication date
TWI305030B (en) 2009-01-01

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