TW200802660A - Semiconductor chip structure - Google Patents

Semiconductor chip structure

Info

Publication number
TW200802660A
TW200802660A TW96123392A TW96123392A TW200802660A TW 200802660 A TW200802660 A TW 200802660A TW 96123392 A TW96123392 A TW 96123392A TW 96123392 A TW96123392 A TW 96123392A TW 200802660 A TW200802660 A TW 200802660A
Authority
TW
Taiwan
Prior art keywords
layer
passivation layer
adhesion
pads
metal
Prior art date
Application number
TW96123392A
Other languages
Chinese (zh)
Inventor
Mou-Shiung Lin
Jin-Yuan Lee
Original Assignee
Megica Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Megica Corp filed Critical Megica Corp
Publication of TW200802660A publication Critical patent/TW200802660A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor chip structure includes a semiconductor substrate, an circuit structure, a passivation layer, a first adhesion/barrier layer, a metal cap and a metal layer. The semiconductor substrate has multiple electric devices located on a surface layer of a surface of the substrate. The circuit structure had multiple circuit layers electrically connecting with each other and electrically connecting with the electric devices. One of the circuit layers has multiple pads. The passivation layer is located on the circuit structure and has multiple openings penetrating through the passivation layer. The openings expose the pads. The first adhesion/barrier layer is over the pads and the passivation layer. The metal cap is located on the first adhesion/barrier layer and the passivation layer. The metal layer is on the metal layer.
TW96123392A 2006-06-28 2007-06-28 Semiconductor chip structure TW200802660A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80598706P 2006-06-28 2006-06-28

Publications (1)

Publication Number Publication Date
TW200802660A true TW200802660A (en) 2008-01-01

Family

ID=44765458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96123392A TW200802660A (en) 2006-06-28 2007-06-28 Semiconductor chip structure

Country Status (1)

Country Link
TW (1) TW200802660A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456727B (en) * 2010-07-15 2014-10-11 Nanya Technology Corp Die package and related die package structure manufacturing method
TWI855429B (en) 2022-11-22 2024-09-11 南亞科技股份有限公司 Semiconductor structures and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456727B (en) * 2010-07-15 2014-10-11 Nanya Technology Corp Die package and related die package structure manufacturing method
TWI855429B (en) 2022-11-22 2024-09-11 南亞科技股份有限公司 Semiconductor structures and manufacturing method thereof

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