TW200802578A - Chemical mechanical polishing method - Google Patents

Chemical mechanical polishing method

Info

Publication number
TW200802578A
TW200802578A TW96112408A TW96112408A TW200802578A TW 200802578 A TW200802578 A TW 200802578A TW 96112408 A TW96112408 A TW 96112408A TW 96112408 A TW96112408 A TW 96112408A TW 200802578 A TW200802578 A TW 200802578A
Authority
TW
Taiwan
Prior art keywords
polishing
chemical mechanical
speed
polishing method
compound
Prior art date
Application number
TW96112408A
Other languages
Chinese (zh)
Inventor
Tetsuya Kamimura
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200802578A publication Critical patent/TW200802578A/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

To provide a polishing method of achieving a high polishing speed and low dishing under a low-pressure condition under the chemical mechanical polish. [Solution for Objects] To provide a chemical mechanical polishing method characterized in that while a polishing fluid for metal is supplied to a polishing pad, as the polishing is made by relative motion in the state of polishing pad is contacting the polished surface with the polishing pressure is 1.0 psi or less, the polishing speed is 300 nm/min to 1000 nm/min, and the average friction resistance is 0 to 0.5; wherein the polishing fluid for metal comprises (a) an organic acid selected from the compound expressed by formula (I), (b) colloid silica particle, (c) at least one corrosion inhibitor selected from imidazole compound and triazole compound, (d) non-ion surfactant, and (e) hydrogen peroxide, and having an etching speed of 0 nm/min to 5 nm/min.
TW96112408A 2006-04-14 2007-04-10 Chemical mechanical polishing method TW200802578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006111826A JP5004494B2 (en) 2006-04-14 2006-04-14 Chemical mechanical polishing method

Publications (1)

Publication Number Publication Date
TW200802578A true TW200802578A (en) 2008-01-01

Family

ID=38759336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96112408A TW200802578A (en) 2006-04-14 2007-04-10 Chemical mechanical polishing method

Country Status (2)

Country Link
JP (1) JP5004494B2 (en)
TW (1) TW200802578A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447215B (en) * 2008-03-19 2014-08-01 Fujifilm Corp Polishing liquid for metal and polishing method using the same
CN104745088A (en) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 Chemical mechanical polishing solution for barrier layer planarization, and use method thereof
CN104745086A (en) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 Chemical mechanical polishing solution for barrier layer planarization, and use method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4804986B2 (en) * 2006-03-30 2011-11-02 富士フイルム株式会社 Cleaning device for semiconductor device substrate and cleaning method using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4608196B2 (en) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド Polishing composition
JP2005175218A (en) * 2003-12-11 2005-06-30 Nitta Haas Inc Slurry for polishing copper wiring
JP2006093467A (en) * 2004-09-24 2006-04-06 Fuji Photo Film Co Ltd Polishing fluid for barrier metal and polishing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447215B (en) * 2008-03-19 2014-08-01 Fujifilm Corp Polishing liquid for metal and polishing method using the same
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
CN104745088A (en) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 Chemical mechanical polishing solution for barrier layer planarization, and use method thereof
CN104745086A (en) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 Chemical mechanical polishing solution for barrier layer planarization, and use method thereof
CN104745088B (en) * 2013-12-25 2019-02-15 安集微电子（上海）有限公司 A kind of chemical mechanical polishing liquid and its application method for barrier layer planarization

Also Published As

Publication number Publication date
JP2007287832A (en) 2007-11-01
JP5004494B2 (en) 2012-08-22

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