TW200802362A - Programmable matrix array with chalcogenide material - Google Patents
Programmable matrix array with chalcogenide materialInfo
- Publication number
- TW200802362A TW200802362A TW95148306A TW95148306A TW200802362A TW 200802362 A TW200802362 A TW 200802362A TW 95148306 A TW95148306 A TW 95148306A TW 95148306 A TW95148306 A TW 95148306A TW 200802362 A TW200802362 A TW 200802362A
- Authority
- TW
- Taiwan
- Prior art keywords
- matrix array
- chalcogenide material
- programmable matrix
- programmable
- chalcongenide
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
A chalcongenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/318,789 US7499315B2 (en) | 2003-06-11 | 2005-12-24 | Programmable matrix array with chalcogenide material |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802362A true TW200802362A (en) | 2008-01-01 |
TWI470628B TWI470628B (en) | 2015-01-21 |
Family
ID=44765402
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95148306A TWI470628B (en) | 2005-12-24 | 2006-12-22 | Programmable matrix array with chalcogenide material |
TW103111610A TWI597724B (en) | 2005-12-24 | 2006-12-22 | Programmable matrix array with chalcogenide material |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103111610A TWI597724B (en) | 2005-12-24 | 2006-12-22 | Programmable matrix array with chalcogenide material |
Country Status (1)
Country | Link |
---|---|
TW (2) | TWI470628B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409943B (en) * | 2008-02-05 | 2013-09-21 | Micron Technology Inc | Multiple memory cells and method |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9576644B2 (en) | 2015-04-27 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit chip having two types of memory cells |
US11508735B2 (en) | 2019-08-28 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell manufacturing |
US11296080B2 (en) | 2020-06-15 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Source/drain regions of semiconductor devices and methods of forming the same |
US11990511B2 (en) | 2021-08-27 | 2024-05-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Source/drain device and method of forming thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5790452A (en) * | 1996-05-02 | 1998-08-04 | Integrated Device Technology, Inc. | Memory cell having asymmetrical source/drain pass transistors and method for operating same |
US5952671A (en) * | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
TW353234B (en) * | 1997-05-13 | 1999-02-21 | United Integrated Circuits Corp | Decoding method of silicon controlled rectifiers (SCR) structure ROM array |
US6108233A (en) * | 1999-08-27 | 2000-08-22 | Lucent Technologies Inc. | Ultra low voltage static RAM memory cell |
EP1326254B1 (en) * | 2001-12-27 | 2009-02-25 | STMicroelectronics S.r.l. | Architecture of a phase-change nonvolatile memory array |
WO2003105156A1 (en) * | 2002-06-05 | 2003-12-18 | 松下電器産業株式会社 | Non-volatile memory circuit, drive method thereof, semiconductor device using the memory circuit |
US7376008B2 (en) * | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
KR100505701B1 (en) * | 2003-08-13 | 2005-08-03 | 삼성전자주식회사 | Programming method of reducing set time of Phase-Change memory and writing driver circuit thereof |
DE60327527D1 (en) * | 2003-09-23 | 2009-06-18 | St Microelectronics Srl | An improved field programmable gate array |
US6937507B2 (en) * | 2003-12-05 | 2005-08-30 | Silicon Storage Technology, Inc. | Memory device and method of operating same |
KR100569549B1 (en) * | 2003-12-13 | 2006-04-10 | 주식회사 하이닉스반도체 | Phase change resistor cell and non-volatile memory device using the same |
-
2006
- 2006-12-22 TW TW95148306A patent/TWI470628B/en active
- 2006-12-22 TW TW103111610A patent/TWI597724B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409943B (en) * | 2008-02-05 | 2013-09-21 | Micron Technology Inc | Multiple memory cells and method |
US8947923B2 (en) | 2008-02-05 | 2015-02-03 | Micro Technology, Inc. | Memory cells with rectifying device |
US9373392B2 (en) | 2008-02-05 | 2016-06-21 | Micron Technology, Inc. | Memory cells with rectifying device |
Also Published As
Publication number | Publication date |
---|---|
TWI597724B (en) | 2017-09-01 |
TWI470628B (en) | 2015-01-21 |
TW201432677A (en) | 2014-08-16 |
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