TW200802362A - Programmable matrix array with chalcogenide material - Google Patents

Programmable matrix array with chalcogenide material

Info

Publication number
TW200802362A
TW200802362A TW95148306A TW95148306A TW200802362A TW 200802362 A TW200802362 A TW 200802362A TW 95148306 A TW95148306 A TW 95148306A TW 95148306 A TW95148306 A TW 95148306A TW 200802362 A TW200802362 A TW 200802362A
Authority
TW
Taiwan
Prior art keywords
matrix array
chalcogenide material
programmable matrix
programmable
chalcongenide
Prior art date
Application number
TW95148306A
Other languages
Chinese (zh)
Other versions
TWI470628B (en
Inventor
Tyler Lowrey
Ward Parkinson
Guy Wicker
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/318,789 external-priority patent/US7499315B2/en
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of TW200802362A publication Critical patent/TW200802362A/en
Application granted granted Critical
Publication of TWI470628B publication Critical patent/TWI470628B/en

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

A chalcongenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.
TW95148306A 2005-12-24 2006-12-22 Programmable matrix array with chalcogenide material TWI470628B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/318,789 US7499315B2 (en) 2003-06-11 2005-12-24 Programmable matrix array with chalcogenide material

Publications (2)

Publication Number Publication Date
TW200802362A true TW200802362A (en) 2008-01-01
TWI470628B TWI470628B (en) 2015-01-21

Family

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Family Applications (2)

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TW95148306A TWI470628B (en) 2005-12-24 2006-12-22 Programmable matrix array with chalcogenide material
TW103111610A TWI597724B (en) 2005-12-24 2006-12-22 Programmable matrix array with chalcogenide material

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103111610A TWI597724B (en) 2005-12-24 2006-12-22 Programmable matrix array with chalcogenide material

Country Status (1)

Country Link
TW (2) TWI470628B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409943B (en) * 2008-02-05 2013-09-21 Micron Technology Inc Multiple memory cells and method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576644B2 (en) 2015-04-27 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit chip having two types of memory cells
US11508735B2 (en) 2019-08-28 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cell manufacturing
US11296080B2 (en) 2020-06-15 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor devices and methods of forming the same
US11990511B2 (en) 2021-08-27 2024-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain device and method of forming thereof

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5790452A (en) * 1996-05-02 1998-08-04 Integrated Device Technology, Inc. Memory cell having asymmetrical source/drain pass transistors and method for operating same
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
TW353234B (en) * 1997-05-13 1999-02-21 United Integrated Circuits Corp Decoding method of silicon controlled rectifiers (SCR) structure ROM array
US6108233A (en) * 1999-08-27 2000-08-22 Lucent Technologies Inc. Ultra low voltage static RAM memory cell
EP1326254B1 (en) * 2001-12-27 2009-02-25 STMicroelectronics S.r.l. Architecture of a phase-change nonvolatile memory array
WO2003105156A1 (en) * 2002-06-05 2003-12-18 松下電器産業株式会社 Non-volatile memory circuit, drive method thereof, semiconductor device using the memory circuit
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
KR100505701B1 (en) * 2003-08-13 2005-08-03 삼성전자주식회사 Programming method of reducing set time of Phase-Change memory and writing driver circuit thereof
DE60327527D1 (en) * 2003-09-23 2009-06-18 St Microelectronics Srl An improved field programmable gate array
US6937507B2 (en) * 2003-12-05 2005-08-30 Silicon Storage Technology, Inc. Memory device and method of operating same
KR100569549B1 (en) * 2003-12-13 2006-04-10 주식회사 하이닉스반도체 Phase change resistor cell and non-volatile memory device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409943B (en) * 2008-02-05 2013-09-21 Micron Technology Inc Multiple memory cells and method
US8947923B2 (en) 2008-02-05 2015-02-03 Micro Technology, Inc. Memory cells with rectifying device
US9373392B2 (en) 2008-02-05 2016-06-21 Micron Technology, Inc. Memory cells with rectifying device

Also Published As

Publication number Publication date
TWI597724B (en) 2017-09-01
TWI470628B (en) 2015-01-21
TW201432677A (en) 2014-08-16

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