TW200746892A - High-strength sputtering target for forming fluorescent film in electroluminescent element - Google Patents
High-strength sputtering target for forming fluorescent film in electroluminescent elementInfo
- Publication number
- TW200746892A TW200746892A TW096105800A TW96105800A TW200746892A TW 200746892 A TW200746892 A TW 200746892A TW 096105800 A TW096105800 A TW 096105800A TW 96105800 A TW96105800 A TW 96105800A TW 200746892 A TW200746892 A TW 200746892A
- Authority
- TW
- Taiwan
- Prior art keywords
- intermetallic compound
- compound phase
- sputtering target
- electroluminescent element
- solid
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title abstract 2
- 229910000765 intermetallic Inorganic materials 0.000 abstract 9
- 229910016015 BaAl4 Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Luminescent Compositions (AREA)
Abstract
A high-strength sputtering target for forming a fluorescent film in an electroluminescent element, includes: a component composition including Al:20 to 50% by weight, Eu:1 to 10 by weight, and Mg:0.5 to 20% by weight, with the balance including Ba and inevitable impurities; and a texture including an intermetallic compound phase of Mg and Al, and an intermetallic compound phase of Al and Ba in which Eu is solid-solved, wherein the intermetallic compound phase of Mg and Al includes an Al3Mg2 intermetallic compound, an Al12Mg17 intermetallic compound, and an AlMg intermetallic compound, and the intermetallic compound phase of Al and Ba in which Eu is solid-solved includes an intermetallic compound phase of a BaAl4 inwhich Eu is solid-solved in Ba and an intermetallic compound phase of a Ba7Al13 inwhich Eu is solid-solved in Ba.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006040338A JP2007217755A (en) | 2006-02-17 | 2006-02-17 | High-strength sputtering target for depositing phosphor film in electroluminescent element |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746892A true TW200746892A (en) | 2007-12-16 |
TWI408992B TWI408992B (en) | 2013-09-11 |
Family
ID=38371625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96105800A TWI408992B (en) | 2006-02-17 | 2007-02-15 | High-strength sputtering target for forming fluorescent film in electroluminescent element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2007217755A (en) |
TW (1) | TWI408992B (en) |
WO (1) | WO2007094449A1 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6447654B1 (en) * | 2001-05-29 | 2002-09-10 | Ifire Technology Inc. | Single source sputtering of thioaluminate phosphor films |
JP2005538516A (en) * | 2002-09-13 | 2005-12-15 | アイファイア テクノロジー コーポレーション | Thin film phosphor for electroluminescence display |
JP4263001B2 (en) * | 2003-03-06 | 2009-05-13 | アイファイヤー アイピー コーポレイション | Sputtering target |
-
2006
- 2006-02-17 JP JP2006040338A patent/JP2007217755A/en not_active Withdrawn
-
2007
- 2007-02-15 TW TW96105800A patent/TWI408992B/en not_active IP Right Cessation
- 2007-02-16 WO PCT/JP2007/052835 patent/WO2007094449A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
TWI408992B (en) | 2013-09-11 |
WO2007094449A1 (en) | 2007-08-23 |
JP2007217755A (en) | 2007-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |