TW200741859A - Plasma processing method and plasma processing apparatus - Google Patents

Plasma processing method and plasma processing apparatus

Info

Publication number
TW200741859A
TW200741859A TW096109196A TW96109196A TW200741859A TW 200741859 A TW200741859 A TW 200741859A TW 096109196 A TW096109196 A TW 096109196A TW 96109196 A TW96109196 A TW 96109196A TW 200741859 A TW200741859 A TW 200741859A
Authority
TW
Taiwan
Prior art keywords
type
wafer
end point
data
plasma processing
Prior art date
Application number
TW096109196A
Other languages
Chinese (zh)
Other versions
TWI413178B (en
Inventor
Kosuke Ogasawara
Susumu Saito
Syuji Nozawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741859A publication Critical patent/TW200741859A/en
Application granted granted Critical
Publication of TWI413178B publication Critical patent/TWI413178B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

To accurately detect an end point regardless of the type of a substrate by automatically determining the type of the substrate and automatically selecting the detection setting of the end point according to the determined substrate type. In the plasma processing method, a correlation between wafer type data and optical data set according to a plurality of wafer types is previously found. When a wafer is subjected to plasma treatment, wafer type data is calculated utilizing the correlation from optical data obtained when the plasma treatment is started (S221, S222). Next, the type of the wafer is determined based on the calculated wafer type data (S223), end point detection set data corresponding to the determined wafer type is selected from a plurality of pieces of end point detection set data stored in a data memory means (S224), and an end point of the plasma treatment is detected on the basis of the selected end point detection set data piece.
TW096109196A 2006-03-17 2007-03-16 A plasma processing method and a plasma processing apparatus TWI413178B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006075308A JP4640828B2 (en) 2006-03-17 2006-03-17 Plasma processing method and plasma processing apparatus

Publications (2)

Publication Number Publication Date
TW200741859A true TW200741859A (en) 2007-11-01
TWI413178B TWI413178B (en) 2013-10-21

Family

ID=38594983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109196A TWI413178B (en) 2006-03-17 2007-03-16 A plasma processing method and a plasma processing apparatus

Country Status (4)

Country Link
JP (1) JP4640828B2 (en)
KR (1) KR100866656B1 (en)
CN (1) CN100495641C (en)
TW (1) TWI413178B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5027753B2 (en) * 2008-07-30 2012-09-19 東京エレクトロン株式会社 Substrate processing control method and storage medium
CN103594390B (en) * 2012-08-15 2018-07-06 盛美半导体设备（上海）有限公司 End point determination device and end-point detection method
KR101780874B1 (en) 2012-10-17 2017-09-21 도쿄엘렉트론가부시키가이샤 Plasma etching endpoint detection using multivariate analysis
JP6523732B2 (en) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
WO2017087378A1 (en) 2015-11-16 2017-05-26 Tokyo Electron Limited Advanced optical sensor and method for plasma chamber
JP6713298B2 (en) * 2016-02-22 2020-06-24 芝浦メカトロニクス株式会社 Plasma processing method and plasma processing apparatus
US20170287791A1 (en) 2016-03-31 2017-10-05 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
WO2018094219A1 (en) 2016-11-18 2018-05-24 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
JP2020515063A (en) 2017-03-17 2020-05-21 東京エレクトロン株式会社 Surface modification control to improve etching metric
CN107727654B (en) * 2017-09-29 2019-12-24 绵阳京东方光电科技有限公司 Film detection method, device and system
JP7055054B2 (en) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 Plasma processing equipment, plasma control method, and plasma control program
JP6920245B2 (en) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 Temperature control method
SG11202111021UA (en) 2019-05-23 2021-11-29 Tokyo Electron Ltd Optical diagnostics of semiconductor process using hyperspectral imaging
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238937B1 (en) 1999-09-08 2001-05-29 Advanced Micro Devices, Inc. Determining endpoint in etching processes using principal components analysis of optical emission spectra with thresholding
JP4567828B2 (en) * 1999-09-14 2010-10-20 東京エレクトロン株式会社 End point detection method
US6449038B1 (en) * 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
KR100793453B1 (en) * 2000-07-07 2008-01-14 동경 엘렉트론 주식회사 Method for maintaining processor, method of automatically inspecting processor and method of automatically resetting processor, method for self-diagnosing software for driving processor
JP2003100708A (en) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp Method for discriminating end point, device for processing semiconductor, and method for manufacturing semiconductor
JP2003131463A (en) * 2001-10-29 2003-05-09 Nitto Denko Corp Electrically semiconductive belt
JP4173311B2 (en) * 2002-03-12 2008-10-29 東京エレクトロン株式会社 Seasoning completion detection method, plasma processing method, and plasma processing apparatus
US7505879B2 (en) * 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
US6830939B2 (en) 2002-08-28 2004-12-14 Verity Instruments, Inc. System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra
JP4085259B2 (en) * 2002-11-20 2008-05-14 株式会社島津製作所 X-ray fluoroscope for wafer inspection
JP4500510B2 (en) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 Etching amount detection method, etching method, and etching apparatus
US20050020073A1 (en) * 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4448335B2 (en) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
KR100866656B1 (en) 2008-11-03
CN101038860A (en) 2007-09-19
TWI413178B (en) 2013-10-21
JP4640828B2 (en) 2011-03-02
JP2007251042A (en) 2007-09-27
KR20070094528A (en) 2007-09-20
CN100495641C (en) 2009-06-03

Similar Documents

Publication Publication Date Title
TW200741859A (en) Plasma processing method and plasma processing apparatus
TW200629365A (en) Substrate transfer and processing apparatus, obstacle measure method in substrate transfer and processing apparatus and program for an obstacle measure in the substrate transfer and processing apparatus
TW200951426A (en) Apparatus for detecting periodic defect and method therefor
WO2004059567A3 (en) Automatic optical inspection system and method
TW200741935A (en) Process apparatus with on-the-fly workpiece centering
MY156408A (en) Method and apparatus for selectively providing data from a test head to a processor
GB0616293D0 (en) Method of image processing
ATE341005T1 (en) METHOD AND DEVICE FOR PERFORMING A SIGNAL CORRELATION IN SEVERAL RESOLUTIONS TO REDUCE MULTI-PATH INTERFERENCE
TWI266042B (en) Method to determine the value of process parameters based on scatterometry data
WO2006034179A3 (en) Method and apparatus for multivariate control of semiconductor manufacturing processes
SG155194A1 (en) Method of detecting a target
WO2004017389A3 (en) Method for performing real time arcing detection
DE602008003530D1 (en) Apparatus, method and computer program product for detecting a non-synchronized random access channel preamble
WO2008101194A3 (en) Capacitance detection in a droplet actuator
DE60219523D1 (en) METHOD, DEVICE AND PROGRAM FOR DEVELOPING DETECTION ALGORITHMS
GB2449815A (en) A Method and Apparatus for Creating Contextualized Auction Feeds
WO2010129439A3 (en) Method and system for multiuser detection
WO2008092936A3 (en) Method and apparatus for measuring process parameters of a plasma etch process
ATE535060T1 (en) APPARATUS AND METHOD FOR PATH SEARCHING IN A CDMA RECEIVER
WO2009131892A3 (en) Methods and apparatus for measuring substrate edge thickness during polishing
EP2319659A3 (en) Eyeglass lens processing apparatus
ATE426484T1 (en) DETECTION DEVICE AND METHOD
DE60308667D1 (en) WATERMARK TIME SCALE SEARCH
WO2007011452A3 (en) An apparatus and method for obtaining a device signal value using a ternary search process
TW200633526A (en) Pull-down detection apparatus and pull-down detection method