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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW095112610ApriorityCriticalpatent/TW200739894A/en
Publication of TW200739894ApublicationCriticalpatent/TW200739894A/en
A semiconductor image sensor and a method for fabricating the same are described. The semiconductor image sensor includes a substrate having at least a photoactive region therein and an IR-cutting layer over the photoactive region.
TW095112610A2006-04-102006-04-10Semiconductor image sensor and method for fabricating the same
TW200739894A
(en)
Substrate provided with transparent conductive film for photoelectric conversion device, method for manufacturing the substrate, and photoelectric conversion device using the substrate
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