TW200737558A - Method of forming a phase-changeable structure - Google Patents

Method of forming a phase-changeable structure

Info

Publication number
TW200737558A
TW200737558A TW096101803A TW96101803A TW200737558A TW 200737558 A TW200737558 A TW 200737558A TW 096101803 A TW096101803 A TW 096101803A TW 96101803 A TW96101803 A TW 96101803A TW 200737558 A TW200737558 A TW 200737558A
Authority
TW
Taiwan
Prior art keywords
phase
changeable
forming
etching
layer
Prior art date
Application number
TW096101803A
Other languages
Chinese (zh)
Inventor
Young-Soo Lim
Jae-Seung Hwang
Hyun-Chul Kim
Jun-Soo Bae
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200737558A publication Critical patent/TW200737558A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

In one embodiment, a phase-changeable structure can be formed by forming a phase-changeable layer on the lower electrode, forming a conductive layer on the phase-changeable layer, etching the conductive layer using a first etching material to form an upper electrode and etching the phase-changeable layer using a second etching material to form a phase-changeable pattern. The first etching material can include a first component containing fluorine. The second etching material does not contain chlorine.
TW096101803A 2006-01-17 2007-01-17 Method of forming a phase-changeable structure TW200737558A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060004801 2006-01-17
KR1020060051782A KR100796732B1 (en) 2006-01-17 2006-06-09 Method of forming a phase changeable structure

Publications (1)

Publication Number Publication Date
TW200737558A true TW200737558A (en) 2007-10-01

Family

ID=38501313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101803A TW200737558A (en) 2006-01-17 2007-01-17 Method of forming a phase-changeable structure

Country Status (2)

Country Link
KR (1) KR100796732B1 (en)
TW (1) TW200737558A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915823B1 (en) * 2007-12-18 2009-09-07 주식회사 하이닉스반도체 Fabrication Method of Phase-Change Memory Device
KR101445333B1 (en) * 2008-08-29 2014-10-01 삼성전자주식회사 Methods for forming resistance changeable memory devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100481866B1 (en) * 2002-11-01 2005-04-11 삼성전자주식회사 Phase changeable memory device and method of fabricating the same
KR20050031160A (en) * 2003-09-29 2005-04-06 삼성전자주식회사 Phase-changable memory device and method of forming the same
KR20050111469A (en) * 2004-05-22 2005-11-25 주식회사 하이닉스반도체 Method for fabricating phase changeable memory device

Also Published As

Publication number Publication date
KR100796732B1 (en) 2008-01-21
KR20070076360A (en) 2007-07-24

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