Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor EngfiledCriticalAdvanced Semiconductor Eng
Priority to TW95109308ApriorityCriticalpatent/TWI291207B/en
Publication of TW200737350ApublicationCriticalpatent/TW200737350A/en
Application grantedgrantedCritical
Publication of TWI291207BpublicationCriticalpatent/TWI291207B/en
Shielding Devices Or Components To Electric Or Magnetic Fields
(AREA)
Magnetic Heads
(AREA)
Abstract
A stack structure is disclosed herein, and the stack structure is particularly suitable for forming a mini-cap for protecting a RF device. According to the present invention, the stack structure of the mini-cap comprises a plurality of layers as follows in order: a base layer, a protective layer, and a bonding media layer. The protective layer is not only used to support and protect the RF device, but also a nonmagnetic material to prevent the RF device from electromagnetic interference.
TW95109308A2006-03-172006-03-17Stack structure of mini-cap for protecting RF device
TWI291207B
(en)
ABSORBENT ARTICLE THAT INCLUDES AN ABSORBENT NUCLEAR LAYER WITH A MATERIAL FREE ZONE AND A TRANSFER LAYER THAT IS PROVIDED BELOW THE ABSORBENT NUCLEUS LAYER