TW200737192A - Semiconductor memory and system - Google Patents

Semiconductor memory and system

Info

Publication number
TW200737192A
TW200737192A TW095110758A TW95110758A TW200737192A TW 200737192 A TW200737192 A TW 200737192A TW 095110758 A TW095110758 A TW 095110758A TW 95110758 A TW95110758 A TW 95110758A TW 200737192 A TW200737192 A TW 200737192A
Authority
TW
Taiwan
Prior art keywords
pair
bit lines
access side
driving circuit
line driving
Prior art date
Application number
TW095110758A
Other languages
Chinese (zh)
Inventor
Hiroyuki Kobayashi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to TW095110758A priority Critical patent/TW200737192A/en
Publication of TW200737192A publication Critical patent/TW200737192A/en

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  • Dram (AREA)

Abstract

Memory units are individually designed at the intersection of word lines and the pairs of bit lines. A word line driving circuit shifts from standby period to effect period to activate any of the word lines. The first pre-charge circuit can charge the voltage line that is going to be charged and that is connected to the pair of bit lines during the standby period. After the start of the word line driving circuit, at least the access side of the pair of the bit lines will be separated from the voltage line that is going to be charged. After the start of the word line driving circuit, a sense-amplifier can amplify the voltage difference relative to the node pair of the pair of bit lines. A switch circuit is disposed between the pair of bit lines and the node pair. At the start of the word line driving circuit, the switch circuit connects the access side of the pair of the bit lines and the access side of the node pair. At the start of the sense-amplifier, the non-access side of the bit line is disconnected from the non-access side of the node pair.
TW095110758A 2006-03-28 2006-03-28 Semiconductor memory and system TW200737192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095110758A TW200737192A (en) 2006-03-28 2006-03-28 Semiconductor memory and system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095110758A TW200737192A (en) 2006-03-28 2006-03-28 Semiconductor memory and system

Publications (1)

Publication Number Publication Date
TW200737192A true TW200737192A (en) 2007-10-01

Family

ID=57913667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110758A TW200737192A (en) 2006-03-28 2006-03-28 Semiconductor memory and system

Country Status (1)

Country Link
TW (1) TW200737192A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12014799B2 (en) 2021-06-18 2024-06-18 Winbond Electronics Corp. Semiconductor storage device having bit line selection circuit formed in memory cell array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12014799B2 (en) 2021-06-18 2024-06-18 Winbond Electronics Corp. Semiconductor storage device having bit line selection circuit formed in memory cell array

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