Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ritek CorpfiledCriticalRitek Corp
Priority to TW95108216ApriorityCriticalpatent/TWI323460B/en
Publication of TW200735088ApublicationCriticalpatent/TW200735088A/en
Application grantedgrantedCritical
Publication of TWI323460BpublicationCriticalpatent/TWI323460B/en
Thermal Transfer Or Thermal Recording In General
(AREA)
Optical Record Carriers And Manufacture Thereof
(AREA)
Abstract
A write-once inorganic information recording medium is provided, which comprises a first substrate, a recording layer, a dielectric layer and a second substrate from up to down. The recording layer, which is on the first substrate, comprises an inorganic recording material TexPdyOzNα, wherein 15<x<55, 2<y<25, 25<z<60, 5<α<15. The forming method of the recording layer can be reactive sputtering, apple-pie target co-sputtering or alloy target sputtering. The dielectric layer is on the recording layer. The second substrate is on the first dielectric layer.
TW95108216A2006-03-102006-03-10Write-once inorganic information recording medium and the forming method of it recording layer
TWI323460B
(en)
Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target
Optical recording medium, process for manufacturing the same, sputtering target for manufacturing the same, and optical recording process using the same
Phase-change information recording medium and process for producing the same, sputtering target, method for using phase-change information recording medium and optical recorder