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Application filed by Jin P ChufiledCriticalJin P Chu
Priority to TW094144358ApriorityCriticalpatent/TW200722532A/en
Publication of TW200722532ApublicationCriticalpatent/TW200722532A/en
Amorphous thin film alloys based on Cu-based multicomponent elements with high glass forming ability are disclosed. The alloys are deposited as a thin film from sources of substantially the same chemical composition. Within the deposited thin film, amorphization is induced extensively up to decades of micrometers in size during annealing. Such controllable extensive amorphization throughout the thin film is useful to regulate the proportion of amorphous phase to crystalline phase, establish the structure/property relationships and thus tailor specific properties. The film resistivity could increase up to twenty times when the fully amorphous film is achieved.
TW094144358A2005-12-142005-12-14Annealing-induced solid-state amorphization in a metallic film
TW200722532A
(en)
Oxide sintered body and method of manufacturing same, sputtering target, transparent conductive oxide film and method of manufacturing same, and solar cell
Effect of substrate temperature on the structural, electrical, and optical properties of GZO/ZnO films deposited by radio frequency magnetron sputtering
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