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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW94140982ApriorityCriticalpatent/TWI283925B/en
Publication of TW200721487ApublicationCriticalpatent/TW200721487A/en
Application grantedgrantedCritical
Publication of TWI283925BpublicationCriticalpatent/TWI283925B/en
A FinFET with a body contact is provided. The FinFET has a fin channel, source, drain, body contact, gate dielectric, and gate. The source and the drain are connected to the two ends of the fin channel. The body contact is on one side of the fin channel and connected to the fin channel through a conductive wire. The gate dielectric covers on the surface of the fin channel. The gate is on another side of the fin channel and strides on the fin channel.
TW94140982A2005-11-222005-11-22A FinFET with a body contact
TWI283925B
(en)