TW200717638A - Polishing method - Google Patents

Polishing method

Info

Publication number
TW200717638A
TW200717638A TW095132447A TW95132447A TW200717638A TW 200717638 A TW200717638 A TW 200717638A TW 095132447 A TW095132447 A TW 095132447A TW 95132447 A TW95132447 A TW 95132447A TW 200717638 A TW200717638 A TW 200717638A
Authority
TW
Taiwan
Prior art keywords
polishing
conductor layer
polishing method
polished
remove
Prior art date
Application number
TW095132447A
Other languages
Chinese (zh)
Inventor
Tatsuhiko Hirano
Jun-Hui Oh
Hiroshi Asano
Tsuyoshi Matsuda
Atsunori Kawamura
Katsunobu Hori
Kenji Sakai
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW200717638A publication Critical patent/TW200717638A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Magnetic Heads (AREA)

Abstract

A polishing method is provided with a step of pre-polishing an object to be polished, and a step of finish-polishing the object after the pre-polishing. The pre-polishing of the object to be polished is provided with a step of polishing the object so as to remove the most of the part of a conductor layer of the object to be removed in the pre-polishing step; and a step of polishing the object to remove the rest of the part of the conductor layer to be removed, after removing the most of the part of the conductor layer to be removed. The polishing of the object after removing the most of the part of the conductor layer to be removed is performed by using a specific pre-polishing composition containing a protection film forming agent, an oxidizing agent and an etching agent.
TW095132447A 2005-09-02 2006-09-01 Polishing method TW200717638A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005255536A JP2007073548A (en) 2005-09-02 2005-09-02 Polishing method

Publications (1)

Publication Number Publication Date
TW200717638A true TW200717638A (en) 2007-05-01

Family

ID=37808946

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132447A TW200717638A (en) 2005-09-02 2006-09-01 Polishing method

Country Status (3)

Country Link
JP (1) JP2007073548A (en)
TW (1) TW200717638A (en)
WO (1) WO2007026863A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009025383A1 (en) * 2007-08-23 2010-11-25 ニッタ・ハース株式会社 Polishing composition
US20100221918A1 (en) * 2007-09-03 2010-09-02 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and method for preparing the same, kit for preparing aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method for semiconductor device
JP2009129977A (en) * 2007-11-20 2009-06-11 Jsr Corp Method of polishing multi-layer circuit board, and multi-layer circuit board
JP2009187984A (en) 2008-02-01 2009-08-20 Fujimi Inc Polishing composition and polishing method using the same
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8974691B2 (en) 2010-09-24 2015-03-10 Fujimi Incorporated Composition for polishing and composition for rinsing
SG10201604674VA (en) 2012-02-01 2016-07-28 Hitachi Chemical Co Ltd Polishing liquid for metal and polishing method
KR102226441B1 (en) * 2013-02-13 2021-03-12 가부시키가이샤 후지미인코퍼레이티드 Polishing composition, production method for polishing composition, and production method for polished article
JP6209845B2 (en) * 2013-04-11 2017-10-11 日立化成株式会社 Polishing liquid, polishing liquid set, and substrate polishing method
JP6480139B2 (en) * 2014-09-30 2019-03-06 株式会社フジミインコーポレーテッド Polishing composition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128475A (en) * 2002-08-02 2004-04-22 Jsr Corp Water borne dispersing element for chemical mechanical polishing and method of manufacturing semiconductor device
JP4251395B2 (en) * 2003-09-05 2009-04-08 ニッタ・ハース株式会社 Slurry for polishing
JP4667013B2 (en) * 2003-11-14 2011-04-06 昭和電工株式会社 Polishing composition and polishing method
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper

Also Published As

Publication number Publication date
JP2007073548A (en) 2007-03-22
WO2007026863A1 (en) 2007-03-08

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