TW200715625A - Organic semiconductor light emitting element, display device using the same, and method for manufacturing organic semiconductor light emitting element - Google Patents
Organic semiconductor light emitting element, display device using the same, and method for manufacturing organic semiconductor light emitting elementInfo
- Publication number
- TW200715625A TW200715625A TW095126555A TW95126555A TW200715625A TW 200715625 A TW200715625 A TW 200715625A TW 095126555 A TW095126555 A TW 095126555A TW 95126555 A TW95126555 A TW 95126555A TW 200715625 A TW200715625 A TW 200715625A
- Authority
- TW
- Taiwan
- Prior art keywords
- organic semiconductor
- light emitting
- emitting element
- semiconductor light
- display device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
An organic semiconductor light emitting element wherein light emitting efficiency is effectively improved. The organic semiconductor light emitting element is provided with an electron injecting electrode (3) and a hole injecting electrode (4) arranged at an interval; an organic semiconductor section (5) arranged in an interelectrode region (10) between the electrodes; a silicon oxide film (2); and a gate electrode (1) facing the interelectrode region (10) having the silicon oxide film in between. The organic semiconductor section (5) is provided with a P-type organic semiconductor material layer (7) and an N-type organic semiconductor material layer (6), which have a PN junction region (12) substantially in an intermediate section (11) of the interelectrode region (10); and an organic light emitting material layer (8) arranged in the PN junction region (12).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005210388A JP4972727B2 (en) | 2005-07-20 | 2005-07-20 | ORGANIC SEMICONDUCTOR LIGHT EMITTING ELEMENT, DISPLAY DEVICE USING SAME, AND METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR LIGHT EMITTING ELEMENT |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200715625A true TW200715625A (en) | 2007-04-16 |
Family
ID=37668802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095126555A TW200715625A (en) | 2005-07-20 | 2006-07-20 | Organic semiconductor light emitting element, display device using the same, and method for manufacturing organic semiconductor light emitting element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4972727B2 (en) |
TW (1) | TW200715625A (en) |
WO (1) | WO2007010925A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008129859A1 (en) * | 2007-04-13 | 2008-10-30 | Panasonic Corporation | Light-emitting element and display device |
JP5386182B2 (en) * | 2008-01-29 | 2014-01-15 | 株式会社半導体エネルギー研究所 | Light emitting device |
KR101496846B1 (en) | 2008-12-24 | 2015-03-02 | 삼성디스플레이 주식회사 | Display device comprising organic light emitting transistor and method of fabricating the same |
US8901547B2 (en) * | 2012-08-25 | 2014-12-02 | Polyera Corporation | Stacked structure organic light-emitting transistors |
JP6149247B1 (en) * | 2016-11-21 | 2017-06-21 | 株式会社奥本研究所 | Light emitting device and manufacturing method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7897976B2 (en) * | 2002-02-19 | 2011-03-01 | Hoya Corporation | Light-emitting device of field-effect transistor type |
JP2003282884A (en) * | 2002-03-26 | 2003-10-03 | Kansai Tlo Kk | Side gate type organic fet and organic el |
EP2237340A3 (en) * | 2003-03-28 | 2010-12-08 | Michele Muccini | Organic electroluminescence devices |
JP4530334B2 (en) * | 2004-01-21 | 2010-08-25 | 国立大学法人京都大学 | ORGANIC SEMICONDUCTOR DEVICE AND DISPLAY DEVICE AND IMAGING DEVICE USING THE SAME |
-
2005
- 2005-07-20 JP JP2005210388A patent/JP4972727B2/en not_active Expired - Fee Related
-
2006
- 2006-07-19 WO PCT/JP2006/314238 patent/WO2007010925A1/en active Application Filing
- 2006-07-20 TW TW095126555A patent/TW200715625A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007010925A1 (en) | 2007-01-25 |
JP2007027578A (en) | 2007-02-01 |
JP4972727B2 (en) | 2012-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200611605A (en) | Organic semiconductor light emitting device and display device using the same | |
WO2009072421A1 (en) | Cmos semiconductor device and method for manufacturing the same | |
JP2011066246A5 (en) | ||
TW200715616A (en) | Structures for reducing operating voltage in a semiconductor device | |
TW200730013A (en) | Organic light emitting display and method of fabricating the same | |
TW200737549A (en) | Gallium nitride-based compound semiconductor light-emitting device | |
TW200705641A (en) | Initial-on SCR device for on-chip ESD protection | |
WO2009063588A1 (en) | Semiconductor device and method for manufacturing the same | |
WO2008041249A8 (en) | Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same | |
WO2007036456A3 (en) | Sic-pn power diode | |
TW200631171A (en) | Photoelectric conversion device and manufacturing method of the same, and a semiconductor device | |
TW200703646A (en) | Trench MOSFET and method of manufacturing the same | |
TW200802524A (en) | Photoelectric device and fabrication method thereof | |
WO2008126449A1 (en) | Hybrid organic light-emitting transistor device and manufacturing method thereof | |
TW200640004A (en) | Solid-state imaging device and method for manufacturing the same | |
EP1143526A3 (en) | Field effect transistor and method of manufacturing the same | |
TW200637036A (en) | Nitride semiconductor device | |
TW200618430A (en) | Semiconductor heterostructure | |
TW200715625A (en) | Organic semiconductor light emitting element, display device using the same, and method for manufacturing organic semiconductor light emitting element | |
WO2007072655A3 (en) | Lateral soi semiconductor devices and manufacturing method thereof | |
TW200711183A (en) | Light-emitting diode and light-emitting diode lamp | |
JP2011510511A5 (en) | ||
TW200637431A (en) | Organic semiconductor light-emitting element and display device | |
TW200701448A (en) | Solid-state imaging device and manufacturing method of the same | |
EP1850395A3 (en) | Semiconductor device and manufacturing method thereof |