TW200715349A - Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof - Google Patents
Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereofInfo
- Publication number
- TW200715349A TW200715349A TW094135735A TW94135735A TW200715349A TW 200715349 A TW200715349 A TW 200715349A TW 094135735 A TW094135735 A TW 094135735A TW 94135735 A TW94135735 A TW 94135735A TW 200715349 A TW200715349 A TW 200715349A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- periphery circuit
- diffusing
- memory array
- dielectric layer
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
The present invention provides a method for preventing doped boron in the dielectric layer from diffusing into a substrate. First, at least one gate is formed in a periphery circuit area and a memory array area of a substrate, respectively, wherein the pattern density in the memory array area is higher than that in the periphery circuit area. Then, a barrier layer is formed on the memory array area and the periphery circuit area, and an un-doped oxide barrier is formed on the periphery circuit area. Finally, a silicate glass containing boron is deposited on the memory array area and the periphery circuit area. The present invention also relates to a semiconductor device produced by the above method, which comprises an un-doped oxide barrier.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94135735A TWI277129B (en) | 2005-10-13 | 2005-10-13 | Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94135735A TWI277129B (en) | 2005-10-13 | 2005-10-13 | Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI277129B TWI277129B (en) | 2007-03-21 |
TW200715349A true TW200715349A (en) | 2007-04-16 |
Family
ID=38646429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94135735A TWI277129B (en) | 2005-10-13 | 2005-10-13 | Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI277129B (en) |
-
2005
- 2005-10-13 TW TW94135735A patent/TWI277129B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI277129B (en) | 2007-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |