TW200715349A - Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof - Google Patents

Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof

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Publication number
TW200715349A
TW200715349A TW094135735A TW94135735A TW200715349A TW 200715349 A TW200715349 A TW 200715349A TW 094135735 A TW094135735 A TW 094135735A TW 94135735 A TW94135735 A TW 94135735A TW 200715349 A TW200715349 A TW 200715349A
Authority
TW
Taiwan
Prior art keywords
substrate
periphery circuit
diffusing
memory array
dielectric layer
Prior art date
Application number
TW094135735A
Other languages
Chinese (zh)
Other versions
TWI277129B (en
Inventor
Chia-Shun Hsiao
Ming-Sheng Tung
Hong-Ming Chen
Ching-Hsien Huang
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW94135735A priority Critical patent/TWI277129B/en
Application granted granted Critical
Publication of TWI277129B publication Critical patent/TWI277129B/en
Publication of TW200715349A publication Critical patent/TW200715349A/en

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Abstract

The present invention provides a method for preventing doped boron in the dielectric layer from diffusing into a substrate. First, at least one gate is formed in a periphery circuit area and a memory array area of a substrate, respectively, wherein the pattern density in the memory array area is higher than that in the periphery circuit area. Then, a barrier layer is formed on the memory array area and the periphery circuit area, and an un-doped oxide barrier is formed on the periphery circuit area. Finally, a silicate glass containing boron is deposited on the memory array area and the periphery circuit area. The present invention also relates to a semiconductor device produced by the above method, which comprises an un-doped oxide barrier.
TW94135735A 2005-10-13 2005-10-13 Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof TWI277129B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94135735A TWI277129B (en) 2005-10-13 2005-10-13 Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94135735A TWI277129B (en) 2005-10-13 2005-10-13 Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof

Publications (2)

Publication Number Publication Date
TWI277129B TWI277129B (en) 2007-03-21
TW200715349A true TW200715349A (en) 2007-04-16

Family

ID=38646429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94135735A TWI277129B (en) 2005-10-13 2005-10-13 Method for preventing doped boron in the dielectric layer from diffusing into substrate and device thereof

Country Status (1)

Country Link
TW (1) TWI277129B (en)

Also Published As

Publication number Publication date
TWI277129B (en) 2007-03-21

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MM4A Annulment or lapse of patent due to non-payment of fees