TW200713564A - Electrostatic dischargeprotection circuit ant semiconductor structure for electrostatic dischargeprotection - Google Patents

Electrostatic dischargeprotection circuit ant semiconductor structure for electrostatic dischargeprotection

Info

Publication number
TW200713564A
TW200713564A TW094131596A TW94131596A TW200713564A TW 200713564 A TW200713564 A TW 200713564A TW 094131596 A TW094131596 A TW 094131596A TW 94131596 A TW94131596 A TW 94131596A TW 200713564 A TW200713564 A TW 200713564A
Authority
TW
Taiwan
Prior art keywords
electrostatic
dischargeprotection
transistor
pad
circuit
Prior art date
Application number
TW094131596A
Other languages
Chinese (zh)
Other versions
TWI255033B (en
Inventor
Shiao-Shien Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94131596A priority Critical patent/TWI255033B/en
Application granted granted Critical
Publication of TWI255033B publication Critical patent/TWI255033B/en
Publication of TW200713564A publication Critical patent/TW200713564A/en

Links

Abstract

An electrostatic discharge (ESD) protection circuit including a detection circuit for detecting an ESD current and a bypass circuit for bypassing the ESD circuit is provided. The detection circuit and the bypass circuit are connected between a first pad and a second pad. The bypass circuit includes a transistor, a diode and a resistor. The drain of the transistor is connected to the first pad. The source of the transistor is connected to the second pad and the anode of the diode. The substrate terminal of the transistor is connected to the cathode of the diode and an output of the detection circuit. The transistor is connected between the substrate terminal and the second pad. The diode may be adopted for maintaining the voltage at the substrate terminal to be steady for turning on the transistor.
TW94131596A 2005-09-14 2005-09-14 Electrostatic discharge protection circuit ant semiconductor structure for electrostatic discharge protection TWI255033B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94131596A TWI255033B (en) 2005-09-14 2005-09-14 Electrostatic discharge protection circuit ant semiconductor structure for electrostatic discharge protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94131596A TWI255033B (en) 2005-09-14 2005-09-14 Electrostatic discharge protection circuit ant semiconductor structure for electrostatic discharge protection

Publications (2)

Publication Number Publication Date
TWI255033B TWI255033B (en) 2006-05-11
TW200713564A true TW200713564A (en) 2007-04-01

Family

ID=37607579

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94131596A TWI255033B (en) 2005-09-14 2005-09-14 Electrostatic discharge protection circuit ant semiconductor structure for electrostatic discharge protection

Country Status (1)

Country Link
TW (1) TWI255033B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387088B (en) * 2008-09-09 2013-02-21 Mediatek Inc Electrostatic discharge protection circuit and the electrostatic protection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387088B (en) * 2008-09-09 2013-02-21 Mediatek Inc Electrostatic discharge protection circuit and the electrostatic protection method

Also Published As

Publication number Publication date
TWI255033B (en) 2006-05-11

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