TW200711130A - Metal oxide semiconductor transistor and fabrication thereof - Google Patents

Metal oxide semiconductor transistor and fabrication thereof

Info

Publication number
TW200711130A
TW200711130A TW094130052A TW94130052A TW200711130A TW 200711130 A TW200711130 A TW 200711130A TW 094130052 A TW094130052 A TW 094130052A TW 94130052 A TW94130052 A TW 94130052A TW 200711130 A TW200711130 A TW 200711130A
Authority
TW
Taiwan
Prior art keywords
doping type
gates
metal oxide
oxide semiconductor
semiconductor transistor
Prior art date
Application number
TW094130052A
Other languages
Chinese (zh)
Other versions
TWI279003B (en
Inventor
Wen-Shiang Liao
Wei-Tsun Shiau
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94130052A priority Critical patent/TWI279003B/en
Publication of TW200711130A publication Critical patent/TW200711130A/en
Application granted granted Critical
Publication of TWI279003B publication Critical patent/TWI279003B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A metal oxide semiconductor transistor comprising a first doping type substrate, a silicon oxide dielectric layer, a plurality of gates, a mask layer, a gate oxide layer, a plurality of second doping type sources/drains and a plurality of spacers is provided. The first doping type substrate comprises a plurality of trenchs to form a plurality of first doping type strips. The silicon oxide dielectric layer is formed in the trenchs. The gates are across the corresponding doping type strips, and they are perpendicular to one another. The mask layer is formed on the substrate. The gate oxide layer is formed between the side walls of first doping type strips and the gates. The second doping type sources/drains are formed in the first doping type strips near the two sides of the gates. The spacers are formed on the side walls of the corresponding gates and the first doping type strips.
TW94130052A 2005-09-02 2005-09-02 Metal oxide semiconductor transistor and fabrication thereof TWI279003B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94130052A TWI279003B (en) 2005-09-02 2005-09-02 Metal oxide semiconductor transistor and fabrication thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94130052A TWI279003B (en) 2005-09-02 2005-09-02 Metal oxide semiconductor transistor and fabrication thereof

Publications (2)

Publication Number Publication Date
TW200711130A true TW200711130A (en) 2007-03-16
TWI279003B TWI279003B (en) 2007-04-11

Family

ID=38645263

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94130052A TWI279003B (en) 2005-09-02 2005-09-02 Metal oxide semiconductor transistor and fabrication thereof

Country Status (1)

Country Link
TW (1) TWI279003B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI509709B (en) * 2011-11-08 2015-11-21 United Microelectronics Corp Manufacturing method for semiconductor structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI509709B (en) * 2011-11-08 2015-11-21 United Microelectronics Corp Manufacturing method for semiconductor structures

Also Published As

Publication number Publication date
TWI279003B (en) 2007-04-11

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