TW200709522A - Semiconductor light emitting device with asymmetric multiple quantum wells - Google Patents

Semiconductor light emitting device with asymmetric multiple quantum wells

Info

Publication number
TW200709522A
TW200709522A TW094129451A TW94129451A TW200709522A TW 200709522 A TW200709522 A TW 200709522A TW 094129451 A TW094129451 A TW 094129451A TW 94129451 A TW94129451 A TW 94129451A TW 200709522 A TW200709522 A TW 200709522A
Authority
TW
Taiwan
Prior art keywords
quantum well
light emitting
emitting device
semiconductor light
different
Prior art date
Application number
TW094129451A
Other languages
Chinese (zh)
Inventor
Tsong-Sheng Lay
Tao-Yuan Chang
Chun-Yang Chen
Jui-Yang Feng
Eu-Ying Lin
Original Assignee
Univ Nat Sun Yat Sen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Sun Yat Sen filed Critical Univ Nat Sun Yat Sen
Priority to TW094129451A priority Critical patent/TW200709522A/en
Publication of TW200709522A publication Critical patent/TW200709522A/en

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  • Semiconductor Lasers (AREA)

Abstract

This invention provides a semiconductor light emitting device with asymmetric multiple quantum wells, which includes a plurality of quantum well groups having different energy states. Each of the quantum well groups has at least one quantum well layer. All the quantum well layers of the quantum well groups have the same composition proportions. The quantum well layers in the different quantum well groups have different thicknesses, but those in the same quantum well group have an equal thickness. The different illuminating wavelengths of the present device come from the quantum well layers with different thicknesses.
TW094129451A 2005-08-29 2005-08-29 Semiconductor light emitting device with asymmetric multiple quantum wells TW200709522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094129451A TW200709522A (en) 2005-08-29 2005-08-29 Semiconductor light emitting device with asymmetric multiple quantum wells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094129451A TW200709522A (en) 2005-08-29 2005-08-29 Semiconductor light emitting device with asymmetric multiple quantum wells

Publications (1)

Publication Number Publication Date
TW200709522A true TW200709522A (en) 2007-03-01

Family

ID=57911063

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129451A TW200709522A (en) 2005-08-29 2005-08-29 Semiconductor light emitting device with asymmetric multiple quantum wells

Country Status (1)

Country Link
TW (1) TW200709522A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104121497A (en) * 2013-04-26 2014-10-29 光明半导体（天津）有限公司 Lighting device
US11158666B2 (en) 2018-12-28 2021-10-26 Epileds Technologies, Inc. Multiple wavelength light-emitting diode epitaxial structure with asymmetric multiple quantum wells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104121497A (en) * 2013-04-26 2014-10-29 光明半导体（天津）有限公司 Lighting device
US11158666B2 (en) 2018-12-28 2021-10-26 Epileds Technologies, Inc. Multiple wavelength light-emitting diode epitaxial structure with asymmetric multiple quantum wells

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