TW200709521A - Semiconductor light emitting device having multiple quantum wells with modulation-doping - Google Patents

Semiconductor light emitting device having multiple quantum wells with modulation-doping

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Publication number
TW200709521A
TW200709521A TW094129452A TW94129452A TW200709521A TW 200709521 A TW200709521 A TW 200709521A TW 094129452 A TW094129452 A TW 094129452A TW 94129452 A TW94129452 A TW 94129452A TW 200709521 A TW200709521 A TW 200709521A
Authority
TW
Taiwan
Prior art keywords
doping
modulation
light emitting
emitting device
semiconductor light
Prior art date
Application number
TW094129452A
Other languages
Chinese (zh)
Other versions
TWI269506B (en
Inventor
Tsong-Sheng Lay
Tao-Yuan Chang
Chun-Yang Chen
Jui-Yang Feng
Eu-Ying Lin
Original Assignee
Univ Nat Sun Yat Sen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Sun Yat Sen filed Critical Univ Nat Sun Yat Sen
Priority to TW94129452A priority Critical patent/TWI269506B/en
Application granted granted Critical
Publication of TWI269506B publication Critical patent/TWI269506B/en
Publication of TW200709521A publication Critical patent/TW200709521A/en

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

This invention provides a semiconductor light emitting device having multiple quantum wells with modulation-doping. The present device has a structure of quantum well layers and barrier layers inter-disposed with each other. These quantum well layers have the same material composition proportion but different thicknesses so as to produce different light wavelengths. The barrier layers of the present invention are performed modulation-doping with respective dopant concentrations. As such, the intensity of illumination of each quantum well layer is controllable. The characteristic of illumination of the whole device is variable so as to improve the broadband quality.
TW94129452A 2005-08-29 2005-08-29 Semiconductor light emitting device having multiple quantum wells with modulation-doping TWI269506B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94129452A TWI269506B (en) 2005-08-29 2005-08-29 Semiconductor light emitting device having multiple quantum wells with modulation-doping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94129452A TWI269506B (en) 2005-08-29 2005-08-29 Semiconductor light emitting device having multiple quantum wells with modulation-doping

Publications (2)

Publication Number Publication Date
TWI269506B TWI269506B (en) 2006-12-21
TW200709521A true TW200709521A (en) 2007-03-01

Family

ID=38291577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94129452A TWI269506B (en) 2005-08-29 2005-08-29 Semiconductor light emitting device having multiple quantum wells with modulation-doping

Country Status (1)

Country Link
TW (1) TWI269506B (en)

Also Published As

Publication number Publication date
TWI269506B (en) 2006-12-21

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MM4A Annulment or lapse of patent due to non-payment of fees