TW200709392A - Flash memory and the manufacturing method thereof - Google Patents
Flash memory and the manufacturing method thereofInfo
- Publication number
- TW200709392A TW200709392A TW094128258A TW94128258A TW200709392A TW 200709392 A TW200709392 A TW 200709392A TW 094128258 A TW094128258 A TW 094128258A TW 94128258 A TW94128258 A TW 94128258A TW 200709392 A TW200709392 A TW 200709392A
- Authority
- TW
- Taiwan
- Prior art keywords
- flash memory
- floating gate
- manufacturing
- isolation
- substrate
- Prior art date
Links
Abstract
A flash memory is provided. The flash memory includes a substrate having an isolation and a floating gate, adjacent to, eachotlier. The flash memory also includes a channel structure disposed between the floating gate and the substrate. The floating gate further has a side wing portion laterally extending away therefrom and forming as a step on the isolation. The flash memory further has a control gate on the floating gate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94128258A TWI285430B (en) | 2005-08-18 | 2005-08-18 | Flash memory and the manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94128258A TWI285430B (en) | 2005-08-18 | 2005-08-18 | Flash memory and the manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200709392A true TW200709392A (en) | 2007-03-01 |
TWI285430B TWI285430B (en) | 2007-08-11 |
Family
ID=39456719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94128258A TWI285430B (en) | 2005-08-18 | 2005-08-18 | Flash memory and the manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI285430B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI644417B (en) * | 2018-01-12 | 2018-12-11 | 世界先進積體電路股份有限公司 | Flash memories and methods for manufacturing the same |
US10515971B2 (en) | 2017-12-11 | 2019-12-24 | Vanguard International Semiconductor Corporation | Flash memories and methods for manufacturing the same |
US11222789B2 (en) | 2020-02-18 | 2022-01-11 | Yangtze Memory Technologies Co., Ltd. | Staircase structure for three-dimensional memory |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338250B2 (en) | 2009-01-15 | 2012-12-25 | Macronix International Co., Ltd. | Process for fabricating memory device |
-
2005
- 2005-08-18 TW TW94128258A patent/TWI285430B/en active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10515971B2 (en) | 2017-12-11 | 2019-12-24 | Vanguard International Semiconductor Corporation | Flash memories and methods for manufacturing the same |
TWI644417B (en) * | 2018-01-12 | 2018-12-11 | 世界先進積體電路股份有限公司 | Flash memories and methods for manufacturing the same |
US11222789B2 (en) | 2020-02-18 | 2022-01-11 | Yangtze Memory Technologies Co., Ltd. | Staircase structure for three-dimensional memory |
TWI820326B (en) * | 2020-02-18 | 2023-11-01 | 大陸商長江存儲科技有限責任公司 | 3d storage structure and method for forming 3d storage structure |
Also Published As
Publication number | Publication date |
---|---|
TWI285430B (en) | 2007-08-11 |
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