TW200709392A - Flash memory and the manufacturing method thereof - Google Patents

Flash memory and the manufacturing method thereof

Info

Publication number
TW200709392A
TW200709392A TW094128258A TW94128258A TW200709392A TW 200709392 A TW200709392 A TW 200709392A TW 094128258 A TW094128258 A TW 094128258A TW 94128258 A TW94128258 A TW 94128258A TW 200709392 A TW200709392 A TW 200709392A
Authority
TW
Taiwan
Prior art keywords
flash memory
floating gate
manufacturing
isolation
substrate
Prior art date
Application number
TW094128258A
Other languages
Chinese (zh)
Other versions
TWI285430B (en
Inventor
Po-An Chen
Hsiu-Han Liao
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW94128258A priority Critical patent/TWI285430B/en
Publication of TW200709392A publication Critical patent/TW200709392A/en
Application granted granted Critical
Publication of TWI285430B publication Critical patent/TWI285430B/en

Links

Abstract

A flash memory is provided. The flash memory includes a substrate having an isolation and a floating gate, adjacent to, eachotlier. The flash memory also includes a channel structure disposed between the floating gate and the substrate. The floating gate further has a side wing portion laterally extending away therefrom and forming as a step on the isolation. The flash memory further has a control gate on the floating gate.
TW94128258A 2005-08-18 2005-08-18 Flash memory and the manufacturing method thereof TWI285430B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94128258A TWI285430B (en) 2005-08-18 2005-08-18 Flash memory and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94128258A TWI285430B (en) 2005-08-18 2005-08-18 Flash memory and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200709392A true TW200709392A (en) 2007-03-01
TWI285430B TWI285430B (en) 2007-08-11

Family

ID=39456719

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94128258A TWI285430B (en) 2005-08-18 2005-08-18 Flash memory and the manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI285430B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI644417B (en) * 2018-01-12 2018-12-11 世界先進積體電路股份有限公司 Flash memories and methods for manufacturing the same
US10515971B2 (en) 2017-12-11 2019-12-24 Vanguard International Semiconductor Corporation Flash memories and methods for manufacturing the same
US11222789B2 (en) 2020-02-18 2022-01-11 Yangtze Memory Technologies Co., Ltd. Staircase structure for three-dimensional memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338250B2 (en) 2009-01-15 2012-12-25 Macronix International Co., Ltd. Process for fabricating memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10515971B2 (en) 2017-12-11 2019-12-24 Vanguard International Semiconductor Corporation Flash memories and methods for manufacturing the same
TWI644417B (en) * 2018-01-12 2018-12-11 世界先進積體電路股份有限公司 Flash memories and methods for manufacturing the same
US11222789B2 (en) 2020-02-18 2022-01-11 Yangtze Memory Technologies Co., Ltd. Staircase structure for three-dimensional memory
TWI820326B (en) * 2020-02-18 2023-11-01 大陸商長江存儲科技有限責任公司 3d storage structure and method for forming 3d storage structure

Also Published As

Publication number Publication date
TWI285430B (en) 2007-08-11

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