TW200709321A - An apparatus and method for non-contact assessment of a constituent in semiconductor substrates - Google Patents
An apparatus and method for non-contact assessment of a constituent in semiconductor substratesInfo
- Publication number
- TW200709321A TW200709321A TW095125278A TW95125278A TW200709321A TW 200709321 A TW200709321 A TW 200709321A TW 095125278 A TW095125278 A TW 095125278A TW 95125278 A TW95125278 A TW 95125278A TW 200709321 A TW200709321 A TW 200709321A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor substrate
- constituent
- contact
- dopant
- assessing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000470 constituent Substances 0.000 title abstract 3
- 239000002019 doping agent Substances 0.000 abstract 3
- 238000000985 reflectance spectrum Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 1
- 241000894007 species Species 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/212,971 US7410815B2 (en) | 2005-08-25 | 2005-08-25 | Apparatus and method for non-contact assessment of a constituent in semiconductor substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200709321A true TW200709321A (en) | 2007-03-01 |
TWI451510B TWI451510B (zh) | 2014-09-01 |
Family
ID=37772074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095125278A TWI451510B (zh) | 2005-08-25 | 2006-07-11 | 半導體基板中成分之非接觸性評估的裝置及方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7410815B2 (zh) |
TW (1) | TWI451510B (zh) |
WO (1) | WO2007024332A2 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7410815B2 (en) | 2005-08-25 | 2008-08-12 | Nanometrics Incorporated | Apparatus and method for non-contact assessment of a constituent in semiconductor substrates |
US7928390B1 (en) | 2007-09-06 | 2011-04-19 | Kla-Tencor Corporation | Infrared metrology |
US8378702B2 (en) * | 2009-05-08 | 2013-02-19 | Corning Incorporated | Non-contact testing of printed electronics |
WO2016029321A1 (en) | 2014-08-29 | 2016-03-03 | Aurora Control Technologies Inc. | System for measuring levels of radiation reflecting from semiconductor material for use in measuring the dopant content thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3906231A (en) * | 1974-03-19 | 1975-09-16 | Nasa | Doped Josephson tunneling junction for use in a sensitive IR detector |
US4555767A (en) * | 1982-05-27 | 1985-11-26 | International Business Machines Corporation | Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance |
US4807991A (en) * | 1986-04-07 | 1989-02-28 | Electro-Organic Company | Method of inspecting and repairing a structural defect in the surface of an object |
AU4689293A (en) * | 1992-07-15 | 1994-02-14 | On-Line Technologies, Inc. | Method and apparatus for monitoring layer processing |
US6917433B2 (en) * | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process |
US6803576B2 (en) * | 2001-09-21 | 2004-10-12 | Memc Electronic Materials, Spa | Analytical method to measure nitrogen concentration in single crystal silicon |
US6943884B2 (en) * | 2002-04-17 | 2005-09-13 | The Boeing Company | Laser system for detection and identification of chemical and biological agents and method therefor |
US7410815B2 (en) | 2005-08-25 | 2008-08-12 | Nanometrics Incorporated | Apparatus and method for non-contact assessment of a constituent in semiconductor substrates |
-
2005
- 2005-08-25 US US11/212,971 patent/US7410815B2/en active Active
-
2006
- 2006-06-27 WO PCT/US2006/025174 patent/WO2007024332A2/en active Application Filing
- 2006-07-11 TW TW095125278A patent/TWI451510B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7410815B2 (en) | 2008-08-12 |
TWI451510B (zh) | 2014-09-01 |
WO2007024332A2 (en) | 2007-03-01 |
US20070048948A1 (en) | 2007-03-01 |
WO2007024332A3 (en) | 2007-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |