TW200707793A - Light-emitting diode structure - Google Patents

Light-emitting diode structure

Info

Publication number
TW200707793A
TW200707793A TW094127350A TW94127350A TW200707793A TW 200707793 A TW200707793 A TW 200707793A TW 094127350 A TW094127350 A TW 094127350A TW 94127350 A TW94127350 A TW 94127350A TW 200707793 A TW200707793 A TW 200707793A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
type doped
doped semiconductor
light
emitting diode
Prior art date
Application number
TW094127350A
Other languages
Chinese (zh)
Inventor
Shih-Feng Pai
Huan-Che Tseng
Shyi-Ming Pan
Fen-Ren Chien
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Priority to TW094127350A priority Critical patent/TW200707793A/en
Publication of TW200707793A publication Critical patent/TW200707793A/en

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Abstract

A light-emitting diode structure having a parasitical backward diode includes a substrate, a pattern semiconductor layer, a first conductive line, a second conductive line and an insulating layer. The substrate includes a first region and a second region. The pattern semiconductor layer has a first type doped semiconductor layer, a second type doped semiconductor layer and an active layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. As mentioned above, the light-emitting diode is formed by the first type doped semiconductor layer, the second type doped semiconductor layer and the active layer constituting in the first region. The first type doping semiconductor layer, an electro static discharge (ESD) protection diode is formed by the first type doped semiconductor layer, the second type doped semiconductor layer, the insulating layer and the active layer in the second region. The light-emitting diode structure of the present invention has the electro static discharge protection diode thereon such that the light-emitting diode can be prevented from ESD damage.
TW094127350A 2005-08-12 2005-08-12 Light-emitting diode structure TW200707793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094127350A TW200707793A (en) 2005-08-12 2005-08-12 Light-emitting diode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094127350A TW200707793A (en) 2005-08-12 2005-08-12 Light-emitting diode structure

Publications (1)

Publication Number Publication Date
TW200707793A true TW200707793A (en) 2007-02-16

Family

ID=57910845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094127350A TW200707793A (en) 2005-08-12 2005-08-12 Light-emitting diode structure

Country Status (1)

Country Link
TW (1) TW200707793A (en)

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