TW200703627A - Non-volatile memory and fabricating method thereof - Google Patents
Non-volatile memory and fabricating method thereofInfo
- Publication number
- TW200703627A TW200703627A TW094122514A TW94122514A TW200703627A TW 200703627 A TW200703627 A TW 200703627A TW 094122514 A TW094122514 A TW 094122514A TW 94122514 A TW94122514 A TW 94122514A TW 200703627 A TW200703627 A TW 200703627A
- Authority
- TW
- Taiwan
- Prior art keywords
- doped region
- gate structure
- substrate
- volatile memory
- fabricating method
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A non-volatile memory is constructed by at least a substrate, a first doped region, a second doped region, a third doped region, a first gate structure, a second gate structure, a first lightly doped region, and a second lightly doped region. The first, the second and the third doped regions are located in the substrate, and the second doped region is located between the first and the third doped regions. The first gate structure is located on the substrate between the first and the second doped region, and the second gate structure is located on the substrate between the second and the third doped region. The first lightly doped region is located in the substrate beneath the first gate structure adjacent to the first doped region, and the second lightly doped region is located in the substrate beneath the second gate structure adjacent to the third doped region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122514A TWI270978B (en) | 2005-07-04 | 2005-07-04 | Non-volatile memory and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122514A TWI270978B (en) | 2005-07-04 | 2005-07-04 | Non-volatile memory and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI270978B TWI270978B (en) | 2007-01-11 |
| TW200703627A true TW200703627A (en) | 2007-01-16 |
Family
ID=38430326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94122514A TWI270978B (en) | 2005-07-04 | 2005-07-04 | Non-volatile memory and fabricating method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI270978B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462297B (en) * | 2011-03-09 | 2014-11-21 | Asahi Kasei Microdevices Corp | Semiconductor device and method for manufacturing semiconductor device |
-
2005
- 2005-07-04 TW TW94122514A patent/TWI270978B/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462297B (en) * | 2011-03-09 | 2014-11-21 | Asahi Kasei Microdevices Corp | Semiconductor device and method for manufacturing semiconductor device |
| US9048252B2 (en) | 2011-03-09 | 2015-06-02 | Asahi Kasei Microdevices Corporation | Semiconductor device and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI270978B (en) | 2007-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |