TW200703430A - High voltage device structure - Google Patents

High voltage device structure

Info

Publication number
TW200703430A
TW200703430A TW094122556A TW94122556A TW200703430A TW 200703430 A TW200703430 A TW 200703430A TW 094122556 A TW094122556 A TW 094122556A TW 94122556 A TW94122556 A TW 94122556A TW 200703430 A TW200703430 A TW 200703430A
Authority
TW
Taiwan
Prior art keywords
region
voltage device
isolation
device structure
conductive type
Prior art date
Application number
TW094122556A
Other languages
Chinese (zh)
Other versions
TWI255495B (en
Inventor
Anchor Chen
Chih-Hung Lin
Hwi-Huang Chen
Jih-Wei Liou
Chin-Hung Liu
Ming Tsung Tung
Chien Ming Lin
Jung Ching Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94122556A priority Critical patent/TWI255495B/en
Application granted granted Critical
Publication of TWI255495B publication Critical patent/TWI255495B/en
Publication of TW200703430A publication Critical patent/TW200703430A/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage device is disposed in the active region. The high-voltage device structure includes a source diffusion region of a first conductive type, a drain region of the first conductive type, and a gate longer than the source diffusion region and the drain diffusion region so as to form spare regions on both sides .of the gate. The isolation region is outside the active region and surrounds the active region. In the isolation region, an isolation ion implantation region of a second conductive type and an extended ion implantation region are disposed to prevent parasitic current from being generating between the source diffusion region and the drain diffusion region.
TW94122556A 2005-07-04 2005-07-04 High voltage device structure TWI255495B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94122556A TWI255495B (en) 2005-07-04 2005-07-04 High voltage device structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94122556A TWI255495B (en) 2005-07-04 2005-07-04 High voltage device structure

Publications (2)

Publication Number Publication Date
TWI255495B TWI255495B (en) 2006-05-21
TW200703430A true TW200703430A (en) 2007-01-16

Family

ID=37613268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94122556A TWI255495B (en) 2005-07-04 2005-07-04 High voltage device structure

Country Status (1)

Country Link
TW (1) TWI255495B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395315B (en) * 2010-04-26 2013-05-01 Richtek Technology Corp Structure in a high-voltage path of an ultra-high voltage device for providing esd protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395315B (en) * 2010-04-26 2013-05-01 Richtek Technology Corp Structure in a high-voltage path of an ultra-high voltage device for providing esd protection

Also Published As

Publication number Publication date
TWI255495B (en) 2006-05-21

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