TW200702483A - Deposition methods, and deposition apparatuses - Google Patents

Deposition methods, and deposition apparatuses

Info

Publication number
TW200702483A
TW200702483A TW095116653A TW95116653A TW200702483A TW 200702483 A TW200702483 A TW 200702483A TW 095116653 A TW095116653 A TW 095116653A TW 95116653 A TW95116653 A TW 95116653A TW 200702483 A TW200702483 A TW 200702483A
Authority
TW
Taiwan
Prior art keywords
deposition
apparatuses
heated surface
methods
precursor
Prior art date
Application number
TW095116653A
Other languages
English (en)
Other versions
TWI325020B (en
Inventor
Ronald A Weimer
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200702483A publication Critical patent/TW200702483A/zh
Application granted granted Critical
Publication of TWI325020B publication Critical patent/TWI325020B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW095116653A 2005-05-11 2006-05-11 Deposition methods, and deposition apparatuses TWI325020B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/127,945 US7407892B2 (en) 2005-05-11 2005-05-11 Deposition methods

Publications (2)

Publication Number Publication Date
TW200702483A true TW200702483A (en) 2007-01-16
TWI325020B TWI325020B (en) 2010-05-21

Family

ID=37198715

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116653A TWI325020B (en) 2005-05-11 2006-05-11 Deposition methods, and deposition apparatuses

Country Status (6)

Country Link
US (2) US7407892B2 (zh)
JP (1) JP2008541450A (zh)
KR (1) KR100953030B1 (zh)
CN (1) CN101175869A (zh)
TW (1) TWI325020B (zh)
WO (1) WO2006130298A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455183B (zh) * 2010-07-12 2014-10-01 Samsung Electronics Co Ltd 化學氣相沈積設備及使用其形成半導體磊晶薄膜之方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7407892B2 (en) 2005-05-11 2008-08-05 Micron Technology, Inc. Deposition methods
JP5060324B2 (ja) * 2008-01-31 2012-10-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び処理容器
KR101043211B1 (ko) * 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
JP2012138609A (ja) * 2012-03-16 2012-07-19 Ulvac Japan Ltd 表面処理装置及びこの表面処理装置を備えた半導体製造装置
US9493874B2 (en) * 2012-11-15 2016-11-15 Cypress Semiconductor Corporation Distribution of gas over a semiconductor wafer in batch processing
WO2014119955A1 (ko) * 2013-02-01 2014-08-07 주식회사 티지오테크 배치식 증착층 형성장치
KR101555021B1 (ko) 2013-02-01 2015-09-22 주식회사 티지오테크 배치식 증착층 형성장치
KR102150625B1 (ko) * 2013-03-15 2020-10-27 삼성디스플레이 주식회사 코팅장치
EP3022329A4 (en) * 2013-07-16 2017-03-22 3M Innovative Properties Company Sheet coating method
KR20160032128A (ko) * 2013-07-16 2016-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 필름의 롤 가공
US9520307B2 (en) * 2015-01-29 2016-12-13 Texas Instruments Incorporated Method and nozzle for hermetically sealed packaged devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020475A (en) * 1987-10-15 1991-06-04 Epsilon Technology, Inc. Substrate handling and transporting apparatus
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6540838B2 (en) * 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
US6922685B2 (en) 2000-05-22 2005-07-26 Mci, Inc. Method and system for managing partitioned data resources
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
US6844260B2 (en) * 2003-01-30 2005-01-18 Micron Technology, Inc. Insitu post atomic layer deposition destruction of active species
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7407892B2 (en) 2005-05-11 2008-08-05 Micron Technology, Inc. Deposition methods

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455183B (zh) * 2010-07-12 2014-10-01 Samsung Electronics Co Ltd 化學氣相沈積設備及使用其形成半導體磊晶薄膜之方法
US8895356B2 (en) 2010-07-12 2014-11-25 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same
US9171994B2 (en) 2010-07-12 2015-10-27 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same

Also Published As

Publication number Publication date
KR20070118185A (ko) 2007-12-13
US20060258157A1 (en) 2006-11-16
TWI325020B (en) 2010-05-21
WO2006130298A3 (en) 2007-03-29
CN101175869A (zh) 2008-05-07
US7407892B2 (en) 2008-08-05
US20080245301A1 (en) 2008-10-09
WO2006130298B1 (en) 2007-05-18
KR100953030B1 (ko) 2010-04-14
JP2008541450A (ja) 2008-11-20
WO2006130298A2 (en) 2006-12-07

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MM4A Annulment or lapse of patent due to non-payment of fees