TW200702301A - Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method - Google Patents

Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method

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Publication number
TW200702301A
TW200702301A TW094122254A TW94122254A TW200702301A TW 200702301 A TW200702301 A TW 200702301A TW 094122254 A TW094122254 A TW 094122254A TW 94122254 A TW94122254 A TW 94122254A TW 200702301 A TW200702301 A TW 200702301A
Authority
TW
Taiwan
Prior art keywords
dissipation
silicon
high heat
insulation
manufacturing
Prior art date
Application number
TW094122254A
Other languages
Chinese (zh)
Other versions
TWI329616B (en
Inventor
Ping-Yin Liu
Hung-Yin Tsai
Chia-Jen Ting
Chun-Hao Hsieh
Yem-Yeu Chang
Chang Pin Chou
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW094122254A priority Critical patent/TW200702301A/en
Publication of TW200702301A publication Critical patent/TW200702301A/en
Application granted granted Critical
Publication of TWI329616B publication Critical patent/TWI329616B/zh

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

A silicon-diamond structure having the properties of high heat-dissipation and insulation comprises a first substrate, a backfill layer, a diamond layer and a second substrate. The backfill layer is located on the upper side of the first substrate. The diamond layer is located above the backfill layer with the surface facing the backfill layer being rough. The second substrate is located above the diamond layer.
TW094122254A 2005-07-01 2005-07-01 Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method TW200702301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094122254A TW200702301A (en) 2005-07-01 2005-07-01 Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094122254A TW200702301A (en) 2005-07-01 2005-07-01 Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method

Publications (2)

Publication Number Publication Date
TW200702301A true TW200702301A (en) 2007-01-16
TWI329616B TWI329616B (en) 2010-09-01

Family

ID=45074506

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094122254A TW200702301A (en) 2005-07-01 2005-07-01 Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method

Country Status (1)

Country Link
TW (1) TW200702301A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504160A (en) * 2018-05-16 2019-11-26 梁剑波 The manufacturing method and semiconductor devices of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504160A (en) * 2018-05-16 2019-11-26 梁剑波 The manufacturing method and semiconductor devices of semiconductor devices

Also Published As

Publication number Publication date
TWI329616B (en) 2010-09-01

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