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Publication of TWI329616BpublicationCriticalpatent/TWI329616B/zh
Cooling Or The Like Of Semiconductors Or Solid State Devices
(AREA)
Thin Film Transistor
(AREA)
Abstract
A silicon-diamond structure having the properties of high heat-dissipation and insulation comprises a first substrate, a backfill layer, a diamond layer and a second substrate. The backfill layer is located on the upper side of the first substrate. The diamond layer is located above the backfill layer with the surface facing the backfill layer being rough. The second substrate is located above the diamond layer.
TW094122254A2005-07-012005-07-01Silicon-diamond structure with high heat-dissipation and insulation and its manufacturing method
TW200702301A
(en)
Substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and method for obtaining such a film
Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor element employing the same