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Priority claimed from US11/156,794external-prioritypatent/US7507598B2/en
Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Publication of TW200701400ApublicationCriticalpatent/TW200701400A/en
Application grantedgrantedCritical
Publication of TWI312552BpublicationCriticalpatent/TWI312552B/en
A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and the bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.
TW95117361A2005-06-202006-05-16Method for processing substrate
TWI312552B
(en)
Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate