TW200643128A - Novel polishing slurries and abrasive-free solutions having a multifunctional activator - Google Patents

Novel polishing slurries and abrasive-free solutions having a multifunctional activator

Info

Publication number
TW200643128A
TW200643128A TW095102886A TW95102886A TW200643128A TW 200643128 A TW200643128 A TW 200643128A TW 095102886 A TW095102886 A TW 095102886A TW 95102886 A TW95102886 A TW 95102886A TW 200643128 A TW200643128 A TW 200643128A
Authority
TW
Taiwan
Prior art keywords
abrasive
polishing slurries
free solutions
novel polishing
multifunctional activator
Prior art date
Application number
TW095102886A
Other languages
Chinese (zh)
Inventor
Irina Belov
Timothy D Moser
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of TW200643128A publication Critical patent/TW200643128A/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization ("CMP") of substrates. In particular, the novel slurries/solutions of the present invention contain a multifunctional activator which provides increased copper removal rate to the aqueous polishing slurry/solution while suppressing isotropic chemical etch and dishing of copper lines.
TW095102886A 2005-01-25 2006-01-25 Novel polishing slurries and abrasive-free solutions having a multifunctional activator TW200643128A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64648105P 2005-01-25 2005-01-25

Publications (1)

Publication Number Publication Date
TW200643128A true TW200643128A (en) 2006-12-16

Family

ID=41484210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095102886A TW200643128A (en) 2005-01-25 2006-01-25 Novel polishing slurries and abrasive-free solutions having a multifunctional activator

Country Status (2)

Country Link
CN (1) CN101611116A (en)
TW (1) TW200643128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI779108B (en) * 2017-10-03 2022-10-01 日商昭和電工材料股份有限公司 Polishing liquid, polishing liquid set, polishing method and defect suppression method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094541B2 (en) * 2014-07-28 2017-03-15 信越半導体株式会社 Germanium wafer polishing method
CN106854468B (en) * 2016-12-01 2018-11-20 浙江凯圣氟化学有限公司 A kind of silicon systems plural layers etching solution
CN112355884B (en) * 2020-11-05 2022-04-08 河北工业大学 Control method for CMP rate selectivity of multi-layer copper interconnection barrier layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI779108B (en) * 2017-10-03 2022-10-01 日商昭和電工材料股份有限公司 Polishing liquid, polishing liquid set, polishing method and defect suppression method

Also Published As

Publication number Publication date
CN101611116A (en) 2009-12-23

Similar Documents

Publication Publication Date Title
WO2006081149A3 (en) Novel polishing slurries and abrasive-free solutions having a multifunctional activator
SG157354A1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TW200513527A (en) Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
TW200502340A (en) Improved chemical mechanical polishing compositions for copper and associated materials and method of using same
TW200621961A (en) CMP composition comprising surfactant
WO2006074248A3 (en) Engineered non-polymeric organic particles for chemical mechanical planarization
WO2004076574A3 (en) Cmp composition comprising a sulfonic acid and a method for polishing noble metals
TW200732460A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TW200802580A (en) Polishing slurry for chemical mechanical polishing (CMP) and polishing method
TW200740972A (en) Metal polishing slurry
TW200714696A (en) High throughput chemical mechanical polishing composition for metal film planarization
TW200720383A (en) Polishing fluids and methods for CMP
WO2010120784A8 (en) Chemical mechanical polishing of silicon carbide comprising surfaces
WO2009037903A1 (en) Cmp slurry for silicon film polishing and polishing method
WO2011005456A3 (en) Cmp compositions and methods for suppressing polysilicon removal rates
SG148913A1 (en) Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
WO2009025383A1 (en) Polishing composition
TW200634137A (en) Metal ion-containing CMP composition and method for using the same
WO2007111813A3 (en) Iodate-containing chemical-mechanical polishing compositions and methods
IL179570A0 (en) Cmp composition for improved oxide removal rate
TW200624545A (en) Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
TW200643128A (en) Novel polishing slurries and abrasive-free solutions having a multifunctional activator
TW200639242A (en) Polishing slurry
IL189504A0 (en) Abrasive-free polishing method
TW200734487A (en) Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries