TW200640795A - Preparation methods for copper thin film and cupric oxide thin film - Google Patents
Preparation methods for copper thin film and cupric oxide thin filmInfo
- Publication number
- TW200640795A TW200640795A TW094116132A TW94116132A TW200640795A TW 200640795 A TW200640795 A TW 200640795A TW 094116132 A TW094116132 A TW 094116132A TW 94116132 A TW94116132 A TW 94116132A TW 200640795 A TW200640795 A TW 200640795A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- copper
- gas
- precursor
- oxide
- Prior art date
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- Chemical Vapour Deposition (AREA)
- Chemically Coating (AREA)
Abstract
A method of preparation of thin film of copper metal or copper oxide is disclosed. The method is especially directed to apply metallization process of copper thin film and copper oxide thin film for a supper large scale integrated circuit manufacturing process. In this method, flat and compact copper thin film is grown during the pre-integration and backfire steps. During these processes copper containing organometalic compound is used as precursor and a reduction gas or an inert gas is used as carrier gas. The precursor is firstly put into the reactor to pre-integrate a layer of cuprous oxide thin film on the substrate under low temperature. The precursor is stopped to supply, and temperature is raised, or another kind of energy is used to backfire the compound in hydrogen gas or a reduction gas environment to deoxidize cuprous oxide into a flat and compact copper metal thin film. If oxygen containing gas is used as reactive gas, cupper oxide can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094116132A TW200640795A (en) | 2005-05-18 | 2005-05-18 | Preparation methods for copper thin film and cupric oxide thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094116132A TW200640795A (en) | 2005-05-18 | 2005-05-18 | Preparation methods for copper thin film and cupric oxide thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200640795A true TW200640795A (en) | 2006-12-01 |
TWI300403B TWI300403B (en) | 2008-09-01 |
Family
ID=45069955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094116132A TW200640795A (en) | 2005-05-18 | 2005-05-18 | Preparation methods for copper thin film and cupric oxide thin film |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200640795A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115874165A (en) * | 2022-11-18 | 2023-03-31 | 深圳市原速光电科技有限公司 | Low-temperature atomic layer deposition preparation method of copper film |
-
2005
- 2005-05-18 TW TW094116132A patent/TW200640795A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115874165A (en) * | 2022-11-18 | 2023-03-31 | 深圳市原速光电科技有限公司 | Low-temperature atomic layer deposition preparation method of copper film |
Also Published As
Publication number | Publication date |
---|---|
TWI300403B (en) | 2008-09-01 |
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