TW200640795A - Preparation methods for copper thin film and cupric oxide thin film - Google Patents

Preparation methods for copper thin film and cupric oxide thin film

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Publication number
TW200640795A
TW200640795A TW094116132A TW94116132A TW200640795A TW 200640795 A TW200640795 A TW 200640795A TW 094116132 A TW094116132 A TW 094116132A TW 94116132 A TW94116132 A TW 94116132A TW 200640795 A TW200640795 A TW 200640795A
Authority
TW
Taiwan
Prior art keywords
thin film
copper
gas
precursor
oxide
Prior art date
Application number
TW094116132A
Other languages
Chinese (zh)
Other versions
TWI300403B (en
Inventor
jia-ping Li
zheng-jie Qiu
Zhi-Hong Chen
Original Assignee
Nanmat Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanmat Technology Co Ltd filed Critical Nanmat Technology Co Ltd
Priority to TW094116132A priority Critical patent/TW200640795A/en
Publication of TW200640795A publication Critical patent/TW200640795A/en
Application granted granted Critical
Publication of TWI300403B publication Critical patent/TWI300403B/zh

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Abstract

A method of preparation of thin film of copper metal or copper oxide is disclosed. The method is especially directed to apply metallization process of copper thin film and copper oxide thin film for a supper large scale integrated circuit manufacturing process. In this method, flat and compact copper thin film is grown during the pre-integration and backfire steps. During these processes copper containing organometalic compound is used as precursor and a reduction gas or an inert gas is used as carrier gas. The precursor is firstly put into the reactor to pre-integrate a layer of cuprous oxide thin film on the substrate under low temperature. The precursor is stopped to supply, and temperature is raised, or another kind of energy is used to backfire the compound in hydrogen gas or a reduction gas environment to deoxidize cuprous oxide into a flat and compact copper metal thin film. If oxygen containing gas is used as reactive gas, cupper oxide can be obtained.
TW094116132A 2005-05-18 2005-05-18 Preparation methods for copper thin film and cupric oxide thin film TW200640795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094116132A TW200640795A (en) 2005-05-18 2005-05-18 Preparation methods for copper thin film and cupric oxide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094116132A TW200640795A (en) 2005-05-18 2005-05-18 Preparation methods for copper thin film and cupric oxide thin film

Publications (2)

Publication Number Publication Date
TW200640795A true TW200640795A (en) 2006-12-01
TWI300403B TWI300403B (en) 2008-09-01

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ID=45069955

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116132A TW200640795A (en) 2005-05-18 2005-05-18 Preparation methods for copper thin film and cupric oxide thin film

Country Status (1)

Country Link
TW (1) TW200640795A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115874165A (en) * 2022-11-18 2023-03-31 深圳市原速光电科技有限公司 Low-temperature atomic layer deposition preparation method of copper film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115874165A (en) * 2022-11-18 2023-03-31 深圳市原速光电科技有限公司 Low-temperature atomic layer deposition preparation method of copper film

Also Published As

Publication number Publication date
TWI300403B (en) 2008-09-01

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